KR20070105595A - Evaporation apparatus - Google Patents

Evaporation apparatus Download PDF

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KR20070105595A
KR20070105595A KR1020060037923A KR20060037923A KR20070105595A KR 20070105595 A KR20070105595 A KR 20070105595A KR 1020060037923 A KR1020060037923 A KR 1020060037923A KR 20060037923 A KR20060037923 A KR 20060037923A KR 20070105595 A KR20070105595 A KR 20070105595A
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thin film
evaporation source
deposition
point
organic thin
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KR1020060037923A
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Korean (ko)
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송하진
이윤석
한승진
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두산메카텍 주식회사
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Publication of KR20070105595A publication Critical patent/KR20070105595A/en

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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12Organic material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • C23C14/243Crucibles for source material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50Substrate holders
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54Controlling or regulating the coating process
    • C23C14/548Controlling the composition
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/50Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED];
    • H01L51/56Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
    • H05B33/00Electroluminescent light sources
    • H05B33/10Apparatus or processes specially adapted to the manufacture of electroluminescent light sources

Abstract

An organic thin film deposition apparatus is provided to control deposition rate by adjusting distance between point deposition sources placed with a linear shape by moving a substrate horizontally through a moving unit. An organic thin film deposition apparatus comprises a deposition chamber(2), and a deposition source assembly(10). An organic thin film is formed on a substrate(S). The deposition source assembly has a plurality of point deposition sources to be separated and linearly arranged. The distance between the point deposition sources is smaller from the center to the outside. The deposition source assembly is placed to cross a point deposition source of evaporating a host and a point deposition source of evaporating the dopant. A shield(20) is provided with a slit(21) for controlling a splashed shape of the organic compound. A movable unit moves the substrate horizontally.

Description

유기박막 증착장치{EVAPORATION APPARATUS} The organic thin film vapor deposition apparatus EVAPORATION APPARATUS {}

도 1은 종래 유기박막 증착장치를 나타낸 것이다. 1 illustrates a conventional organic thin-film evaporation apparatus.

도 2는 종래 유기박막 증착공정을 설명하는 개략도이다. Figure 2 is a schematic view for explaining the conventional organic thin film deposition process.

도 3은 본 발명에 의한 유기박막 증착장치를 나타낸 것이다. 3 shows an organic thin film vapor deposition apparatus according to the present invention.

도 4는 본 발명에 의한 유기박막 증착공정을 설명하는 개략도이다. Figure 4 is a schematic diagram illustrating an organic thin film vapor deposition process according to the invention.

도 5 내지 도 7은 본 발명에 의한 증착원 어셈블리의 다양한 실시예를 나타낸 것이다. 5 through 7 shows various embodiments of a vapor source assembly according to the present invention.

**도면의 주요부분에 대한 부호의 설명** Description of the drawings ** **

1: 증착장치 2: 챔버 1: evaporator 2: chamber

10: 증착원 어셈블리 20: 쉴드 10: deposition source assembly 20: Shield

21: 슬릿 21: slit

본 발명은 유기박막 증착장치에 관한 것으로서, 보다 상세하게는 선형으로 배치되는 복수개의 점증착원들 사이의 이격거리를 조절함으로써, 증착률을 제어할 수 있는 유기박막 증착장치에 관한 것이다. The present invention relates to relates to organic thin film vapor deposition apparatus, an organic thin film vapor deposition apparatus capable of controlling by adjusting the separation distance between the plurality of points and more particularly linear evaporation source disposed in the deposition rate.

최근 정보 통신 기술의 비약적인 발전과 시장의 팽창에 따라 디스플레이 소자로 평판표시소자(Flat Panel Display)가 각광받고 있다. Recent information has flat panel display devices (Flat Panel Display) as a display device in accordance with the expansion of the rapid development of communications technology and the market has been in the spotlight. 이러한 평판표시소자로는 액정 표시소자(Liquid Crystal Display), 플라즈마 디스플레이 소자(Plasma Display Panel), 유기 발광 소자(Organic Light Emitting Diodes) 등이 대표적이다. Such flat panel display device is typically a liquid crystal display device (Liquid Crystal Display), a plasma display device (Plasma Display Panel), an organic light emitting device (Organic Light Emitting Diodes).

그 중에서 유기발광소자는 빠른 응답속도, 기존의 액정표시소자보다 낮은 소비 전력, 경량성, 별도의 백라이트(back light) 장치가 필요 없어서 초 박형으로 만들 수 있는 점, 고휘도 등의 매우 좋은 장점을 가지고 있어서 차세대 디스플레이 소자로서 각광받고 있다. Among them, the organic light emitting device has a very great advantage of short response time, that high luminance such as a lower power consumption than the conventional liquid crystal display device, light weight, and a separate back light (back light) device that can be created with no second thin required in has been in the spotlight as a next generation display device.

이러한 유기발광소자는 기판 위에 양극 막, 유기 박막, 음극 막을 순서대로 입히고, 양극과 음극 사이에 전압을 걸어줌으로써 적당한 에너지의 차이가 유기 박막에 형성되어 스스로 발광하는 원리이다. The organic light emitting device is a principle that positive electrode layer, the organic thin film overlaid in order, a negative electrode film, the difference in energy by applying a suitable voltage between the anode and the cathode is formed on the organic light emitting thin film on the substrate itself. 즉, 주입되는 전자와 정공(hole)이 재결합하며 남는 여기 에너지가 빛으로 발생하는 것이다. That is, where the injected electrons and holes (hole) recombination and left to the energy generated by light. 이때 유기 물질의 도판트의 양에 따라 발생하는 빛의 파장을 조절할 수 있으므로 풀 칼라(full color)의 구현이 가능하다. At this time, it may adjust the wavelength of light generated by the amount of dopant in the organic substance it is possible to implement a full-color (full color).

유기발광소자의 자세한 구조는 도면에는 도시하지 않았지만 기판상에 양극(anode), 정공 주입층(hole injection layer), 정공 운송층(hole transfer layer), 발광층(emitting layer), 전자 운송층(eletron transfer layer), 전자 주입층 (eletron injection layer), 음극(cathode)이 순서대로 적층되어 형성된다. Detailed structure of the organic light emitting device is drawing, the positive electrode (anode), a hole injection layer on a substrate, though not shown (hole injection layer), a hole transport layer (hole transfer layer), a light emitting layer (emitting layer), an electron transport layer (eletron transfer layer), is formed to be stacked in the electron injection layer (eletron injection layer), a negative electrode (cathode) in this order. 여기에서 양극으로는 면저항이 작고 투과성이 좋은 ITO(Indium Tin Oxide)가 주로 사용된다. Here, the positive electrode is often used a small permeable sheet resistance good ITO (Indium Tin Oxide). 그리고 유기 박막은 발광 효율을 높이기 위하여 정공 주입층, 정공 운송층, 발광층, 전자 운송층, 전자 주입층의 다층으로 구성되며, 발광층으로 사용되는 유기물질은 Alq 3 , TPD, PBD, m-MTDATA, TCTA 등이다. And an organic thin film is composed of a hole injection layer, a hole transport layer, light emitting layer, an electron transport layer, the electron injection layer, the multi-layer to increase the light emitting efficiency, an organic material used for the light emitting layer is Alq 3, TPD, PBD, m-MTDATA, TCTA is like. 또한, 음극으로는 LiF-Al 금속막이 사용된다. Further, the cathode is used as a film LiF-Al metal. 그리고 유기 박막이 공기 중의 수분과 산소에 매우 약하므로 소자의 수명(life time)을 증가시키기 위해 봉합하는 봉지막이 최상부에 형성된다. And, because the organic thin film is very weak to moisture and oxygen in the air bag to seal in order to increase the service life (life time) of the element film is formed on the top.

한편, 현재까지 개발된 유기박막형성 방법에는 진공증착법(Vacuum Deposition Method), 스퍼터링(sputtering)법, 이온빔 증착(Ion-beam Deposition)법, Pulsed-laser 증착법, 분자선 증착법, 화학기상증착법, 스핀코터(spin coater) 등이 있다. On the other hand, the organic thin film forming method developed so far include a vacuum vapor deposition method (Vacuum Deposition Method), sputtering (sputtering) process, ion beam deposition (Ion-beam Deposition) method, a Pulsed-laser deposition, molecular beam deposition, chemical vapor deposition method, a spin coater ( It includes spin coater). 이 중에서 현재 상용화되어 있는 기술은 진공증착법이다. This is currently available from the technology which is a vacuum deposition method.

여기서, 진공증착법이란 유기물이 수용된 도가니 주위를 가열하여 기화 또는 승화시켜 증기(기체)상태의 유기물을 도가니 상부에 위치한 기판에 증착하는 것이다. Here, to heat the crucible around the vacuum vapor deposition is vaporized or sublimed organic material contained by depositing organic material in the vapor state (gas) to the substrate located above the crucible.

도 1 및 도 2를 참조하여 종래 유기박막 증착장치를 설명한다. Reference to Figure 1 and 2 will be described in the conventional organic thin film deposition device. 도시된 바와 같이, 증착원(110)이 설치된 증착챔버(100)에 기판(S)을 반입, 지지한다. And, bring the substrate (S) in the evaporation source deposition chamber 100, 110 is installed, the support as illustrated. 상기 증착원(110)은 선형증착원(Linear Source)로서, 상부에 개구부(111)가 형성된 선형 몸체에 유기물질을 수용할 수 있도록 형성되고, 이를 가열하여 증발시킬 수 있는 히터(미도시)가 포함되어 이루어진다. The evaporation source 110 is a linear deposition source (Linear Source), and a linear body with an opening 111 formed in the top formed to accommodate the organic materials by heating them (not shown) a heater capable of evaporating the made contained.

증착챔버(100)에 기판(S)을 반입, 지지한 다음, 유기물질을 증발시켜서 소정 두께의 유기박막을 형성하는 것이다. A fetch, supporting a substrate (S) to the deposition chamber 100, and then evaporation of the organic material to form an organic thin film having a predetermined thickness.

한편, 유기박막의 형성에 있어서 중요한 것은 박막의 균일도이다. On the other hand, what is important in the formation of the organic thin film is the uniformity of the thin film. 특히, 기판의 중앙부위가 가장자리보다 더 많이 증착되는 현상이 발생된다. In particular, the central portion of the substrate is generated a phenomenon that is more than the deposition edge.

이를 개선하기 위해 선형증착원의 개구부의 형상을 적절히 조절함으로써 박막의 균일도를 향상시켰다. Appropriate adjustment of the shape of the opening of the linear evaporation source to improve this by improved the uniformity of the thin film. 즉, 도시된 바와 같이, 상기 개구부의 중앙을 양단부보다 더 작게 형성한 것이다. In other words, it will form the center of the opening portion smaller than both end portions, as shown. 그러나 이러한 개구부의 형상을 조절하는 것은 다수번의 실험을 통해 얻어지는 매우 난해한 작업이었다. However, to control the shape of the opening was a very difficult task obtained through multiple single experiment.

본 발명은 상술한 문제점을 해결하기 위하여 안출된 것으로서, 본 발명의 목적은 선형으로 배치되는 복수개의 점증착원들 사이의 이격거리를 조절함으로써, 증착률을 제어할 수 있는 유기박막 증착장치를 제공함에 있다. The present invention provides an organic thin film deposition device that can by object of the present invention to control the spacing between the plurality of point deposition source disposed in a linear, to control the deposition rate as been made in view of solving the above problems it is.

위와 같은 기술적 과제를 해결하기 위하여 본 발명에 의한 기판에 유기박막을 형성하는 증착장치는 증착챔버; Deposition is the deposition chamber for forming an organic thin film on a substrate according to the present invention to solve the technical problem above; 및 복수개의 점증착원이 서로 이격되어 선형으로 배열되는 증착원 어셈블리;를 포함하여 이루어지되, 상기 점증착원들 사이의 이격거리는 중앙에서 외측으로 갈수록 작아지도록 배치되는 것을 특징으로 한다. And a plurality of point deposition sources are spaced apart from each other and arranged in a linear deposition source assembly; jidoe comprises a, is characterized in that so that increasingly smaller outwardly disposed from the center of the spacing distance between the point evaporation source.

또한 상기 증착원 어셈블리는 상기 점증착원들이 1열로 배치되되, 호스트를 증발시키는 점증착원과, 도펀트를 증발시키는 점증착원이 교차되도록 배치될 수 있다. In addition, the evaporation source assembly may be disposed so that the cross point evaporation source for evaporating the point evaporation source and the dopant which doedoe the point evaporation source are arranged in a row, and evaporation of the host.

또는 상기 점증착원들이 2열 이상으로 배치되되, 호스트를 증발시키는 열과, 도펀트를 증발시키는 열이 교차되도록 배치될 수도 있을 것이다. Or doedoe arranged in the point evaporation source are more than two columns, might be arranged such that the intersection of heat and heat of evaporation of the host, and evaporation of the dopant.

또한 상기 증착원 어셈블리의 상방에는 증발된 유기물의 비산형태를 제어하는 슬릿이 형성된 쉴드(shield)가 더 구비되는 것이 바람직하다. In addition, it is preferable that further comprising shield (shield) the slit is formed to have a non-control in the form of a vaporized organic material above the evaporation source assembly.

또한 상기 기판을 수평이동시키는 이동수단이 더 구비되는 것이 바람직하다. It is also preferred that the moving means is further provided for moving the substrate horizontally.

이하, 첨부된 도면을 참조하여 본 발명에 의한 실시예의 구성 및 작용을 구체적으로 설명한다. It illustrates the embodiment and the effect of the present invention with reference to the accompanying drawings in detail.

도 3 및 도 4를 참조하면, 본 실시예의 증착장치(1)는 챔버(2)와, 상기 챔버(2)의 내부에 설치된 증착원 어셈블리(10)를 포함하여 이루어진다. 3 and 4, examples deposition apparatus 1 of this embodiment may comprise a chamber (2), a vapor source assembly (10) installed in the interior of the chamber (2).

상기 증착원 어셈블리(10)는 복수개의 점증착원을 선형으로 배열하되, 특히 점증착원들 사이의 이격거리를 적절히 조절한 것이다. The evaporation source assembly 10 includes a linear array, but with a plurality of point evaporation source, to a particular appropriate adjustment of the distance between the point evaporation source.

또한 상기 기판(S)과 증착원 어셈블리(10) 사이 공간에는 쉴드(20)가 더 구비된다. In addition, the substrate (S) and the evaporation source assembly 10, the shield 20 between the space is further provided. 상기 쉴드(20)는 증발된 유기물질의 비산형태를 제어하기 위한 것으로서, 유기물질이 통과될 수 있도록 슬릿(21)이 형성되어 있다. The shield 20 serves to control the scattering in the form of a vaporized organic material, a slit 21 is formed so that the organic material can be passed.

또한 증착공정 중에 기판(S)을 수평방향으로 이동시켜 스캐닝할 수 있도록 기판 이송수단(미도시)이 더 구비되어 있다. In addition, the substrate transfer means (not shown) is further provided to the scanning by moving the substrate (S) during the deposition process in the horizontal direction. 기판 이송수단은 공지의 수단들이 적용 가능하다. Substrate transfer means can be known means are applied.

도 5를 참조하여 상기 증착원 어셈블리(10)를 보다 구체적으로 설명하면, 상기 점증착원들 사이의 이격거리를 중앙에서 외측으로 갈수록 작아지도록 배치한 것이다(d 1 =d 2 >d 3 =d 4 >d 5 =d 6 ). Is a reference to Figure 5, Specifically than the evaporation source assembly 10, so that increasingly smaller in the outer position the distance between the point evaporation source in the middle, (d 1 = d 2> d 3 = d 4> d 5 = d 6) . 이것은 상술한 바와 같이, 기판(S)의 중앙부위에 더 많이 증착되는 것을 방지하기 위한 것이다. This is to prevent the more deposited on the central part of, as described above, the substrate (S).

또한 상기 복수의 점증착원들은 호스트를 증발시키는 점증착원과 도펀트를 증발시키는 점증착원이 교차되도록 배치됨으로써 이종물질을 동시 증착할 수 있다. In addition, the plurality of point deposition source can be simultaneously deposited, the heterogeneous material being disposed so that the cross point evaporation source for evaporating the point evaporation source for evaporating the dopant and the host.

또한 도 6과 같이, 복수의 점증착원들을 2열로 배치할 수도 있다. It can also be arranged in two rows of a plurality of the point evaporation source, as shown in FIG. 이 때, 1열은 호스트를 증발시키는 점증착원들(11)이고, 2열은 도펀트를 증발시키는 점증착원들(12)로 배치할 수 있다. At this time, the first column is the point evaporation source 11 for evaporating the host, the second column can be disposed with respect to the evaporation source 12 for evaporating the dopant.

도 7을 참조하면, 상기 증착원 어셈블리(10)는 복수개의 점증착원을 선형으로 배치하되, 3열로 구성할 수도 있다. 7, the deposition source assembly (10) is linear, but arranged in a plurality of point evaporation source, it is also possible to configure three column. 이 경우에는 1열과 3열은 호스트를 증발시키는 점증착원들(11)이고, 2열은 도펀트를 증발시키는 점증착원들(12)이다. In this case, the first column and third column is that the evaporation source 12 which is the point evaporation source 11 for evaporating the host, the second column is evaporated and the dopant. 특히, 각 점증착원을 지그재그 형상으로 배열한 것이다. More particularly, to the arrangement of each point evaporation source in a staggered pattern. 반대로 1열과 3열은 도펀트를 증발시키는 점증착원들이고, 2열은 호스트를 증발시키는 점증착원들일 수도 있는 것이다. Conversely 1 column 3 column deulyigo point evaporation source, two heat of evaporation of the dopant which is also acceptable that the evaporation source for evaporation of the host.

이를 참조하여 본 발명의 작용을 설명한다. Reference it will be described the operation of the invention.

도시된 바와 같이, 점증착원을 선형으로 배치함으로써 선형증착원과 유사한 작용을 할 수 있다. By, place a point evaporation source linearly as illustrated may be a function similar to the linear evaporation source. 더욱이, 점증착원들의 이격거리를 조절함으로써 증착율을 제어할 수 있게 된다. Further, by adjusting the distance of the point evaporation source it is possible to control the deposition rate. 이와 같이 증착율을 제어하기 위하여 점증착원들의 이격거리를 조절하는 것은 동일목적을 위하여 선형증착원의 개구부 형상을 조절하는 것보다 매우 용이한 것이다. It is to adjust the distance of the point evaporation source in order thus to control the deposition rate is extremely easier than controlling the opening shape of the linear evaporation source for the same purpose.

본 발명에 따르면, 복수개의 점증착원들 사이의 이격거리를 조절함으로써, 증착률의 제어가 매우 용이하다는 효과가 있다. According to the invention, by adjusting the spacing between the plurality of point deposition source, it is effective to control the deposition rate is very easy.

Claims (5)

  1. 기판에 유기박막을 형성하는 증착장치에 있어서, In the deposition apparatus for forming an organic thin film on a substrate,
    증착챔버; A deposition chamber; And
    복수개의 점증착원이 서로 이격되어 선형으로 배열되는 증착원 어셈블리;를 포함하여 이루어지되, Jidoe comprises a,; the plurality of point deposition sources are spaced apart from each other and arranged in a linear deposition source assembly
    상기 점증착원들 사이의 이격거리는 중앙에서 외측으로 갈수록 작아지도록 배치되는 것을 특징으로 하는 유기박막 증착장치. The organic thin film vapor deposition apparatus characterized in that so that increasingly smaller outwardly disposed from the center of the spacing distance between the point evaporation source.
  2. 제 1 항에 있어서, According to claim 1,
    상기 증착원 어셈블리는, The evaporation source assembly,
    상기 점증착원들이 1열로 배치되되, 호스트를 증발시키는 점증착원과, 도펀트를 증발시키는 점증착원이 교차되도록 배치되는 것을 특징으로 하는 유기박막 증착장치. The point evaporation source are disposed in a row doedoe, an organic thin film vapor deposition apparatus characterized in that the point evaporation source for evaporating the host, which is disposed so that the cross point evaporation source for evaporating a dopant.
  3. 제 1 항에 있어서, According to claim 1,
    상기 증착원 어셈블리는, The evaporation source assembly,
    상기 점증착원들이 2열 이상으로 배치되되, 호스트를 증발시키는 열과, 도펀 트를 증발시키는 열이 교차되도록 배치되는 것을 특징으로 하는 유기박막 증착장치. The point evaporation source are doedoe arranged in two or more columns, the organic thin film vapor deposition apparatus is arranged such that the intersection of heat and heat of evaporation of the host, and evaporation of the dopeon agent.
  4. 제 1 항에 있어서, According to claim 1,
    상기 증착원 어셈블리의 상방에는 증발된 유기물의 비산형태를 제어하는 슬릿이 형성된 쉴드(shield)가 더 구비되는 것을 특징으로 하는 유기박막 증착장치. The organic thin film vapor deposition apparatus characterized in that further comprising shield (shield) the slit is formed to have a non-control in the form of a vaporized organic material above the evaporation source assembly.
  5. 제 1 항에 있어서, According to claim 1,
    상기 기판을 수평이동시키는 이동수단이 더 구비되는 것을 특징으로 하는 유기박막 증착장치. The organic thin film vapor deposition apparatus characterized in that the moving means for moving the substrate level is further provided.
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