KR101801794B1 - Sputtering apparatus - Google Patents

Abstract

TECHNICAL FIELD [0001] The present invention relates to a semiconductor device or a manufacturing apparatus for a flat panel display, and more particularly to a sputtering apparatus.
A feature of the present invention is that the gas supply line for supplying the reactive gas is guided through the tee base fixing the ground shield so that the reactive gas is uniformly sprayed directly onto the substrate.
This makes it possible to prevent the problem that the reaction gas is partially shifted and supplied to the inside of the low process chamber to cause a difference in reactivity on the substrate by making the reaction gas uniformly exist in the plasma forming space.
Therefore, the substrate can be uniformly processed in a wholly uniform manner, and the thickness or physical properties of the thin film to be deposited and etched on the surface of the substrate can be prevented from becoming uneven.
In addition, since the reaction gas is divided and supplied to the respective regions, the composition ratio and the supply amount of the reactive gas injected for each region can be adjusted, thereby preventing the problem that the reactive gas is partially biased and supplied at low rates, .

Description

Sputtering apparatus

TECHNICAL FIELD [0001] The present invention relates to a semiconductor device or a manufacturing apparatus for a flat panel display, and more particularly to a sputtering apparatus.

In recent years, as the society has become a full-fledged information age, a display field for processing and displaying a large amount of information has rapidly developed, and various flat panel display devices have been developed in response to this.

Specific examples of such flat panel display devices include a liquid crystal display device (LCD), a plasma display panel (PDP), a field emission display (FED) And electroluminescence display device (ELD). These flat panel display devices are excellent in performance of thinning, light weight, and low power consumption, and are rapidly replacing existing cathode ray tubes (CRTs).

In particular, a liquid crystal display device is characterized in that it has a large contrast ratio, is suitable for moving picture display, and has low power consumption, and is utilized in various fields such as a notebook computer, a monitor, and a TV. And the liquid crystal has an optical anisotropy in which the molecular structure is thin and long and has a direction in the arrangement and a polarizing property in which the direction of the molecular arrangement is changed according to the size when the liquid crystal is placed in the electric field.

In order to form such a liquid crystal display device, various processes such as thin film deposition, photo-lithography, and etching for forming a thin film of a predetermined substance are performed.

Among them, the thin film deposition is a chemical vapor deposition (CVD) method of inducing a chemical reaction of radicals on the substrate and dropping and adsorbing the resultant thin film particles, And sputtering of a physical vapor deposition method in which the substrate is collided with and adsorbed on the substrate.

Here, the sputtering is performed in the sputtering chamber. Inside the sputtering chamber, a target formed of a thin film material, a backing plate to which the target is coupled, and a magnet are included.

The principle and operation of thin film deposition of sputtering will be briefly described. After the chamber is vacuum-formed, a sputter gas such as argon (Ar) is injected into the vacuum region while applying a voltage to the backing plate.

Then, the particles of the sputter gas are ionized in a plasma state, and the ionized particles collide with the target. At this time, the kinetic energy of the ionized particles is transferred to the atoms constituting the target, A sputtering phenomenon is generated.

The atoms emitted from the target are diffused toward the substrate and deposited on the substrate to form a thin film on the substrate. At this time, the ionization probability of the ionized particles is increased due to the influence of the magnetic field of the N pole and the S pole of the magnet located on the back surface of the target, so that the sputtering phenomenon occurs rapidly.

In this sputtering, a reactive gas such as HBr or Cl 2 is introduced together with a sputter gas to form a thin film on a substrate through reactive sputtering. In reactive sputtering, a reactive gas is introduced into a chamber and atoms To produce a film that is sputtered directly on the substrate or reacted again with the free target material to be sputtered onto the substrate.

At this time, since the reactive gas directly reacts with the atoms emitted from the target and is deposited on the substrate in a compound state, it must be uniformly sprayed on the substrate. However, since the gas supply structure for supplying the reactive gas is located on the back surface of the magnet, There is a problem in that the path through which the reaction gas flows into the formation space becomes long, and the reaction gas can not be uniformly supplied onto the substrate.

As a result, a difference in reactivity occurs on the substrate, resulting in a problem that the thin film is formed on the substrate in a non-uniform manner.

SUMMARY OF THE INVENTION It is a first object of the present invention to provide a stirrup apparatus capable of uniformly injecting a reaction gas onto a substrate.

A second object of the present invention is to uniformly form a thin film on a substrate.

In order to accomplish the above-mentioned object, the present invention provides a method of manufacturing a semiconductor device, comprising: a chamber defining a reaction region where a substrate is located; A target disposed in the chamber and spaced a predetermined distance from the substrate and corresponding to one surface of the target, the targets being spaced apart from each other by a predetermined distance; A plurality of backing plates positioned on opposite sides of each of the targets to secure the respective targets; A gas supply pipe located on the back surface of the backing plate; A ground shield positioned between said adjacent targets; A tee base fixing the ground shield and having a groove formed therein; And a gas supply line extending from the gas supply pipe and guided by the grooves of the tee base and having a plurality of ejection openings formed along the longitudinal direction, wherein the ground shield has a spray hole corresponding to the ejection opening, to provide.

At this time, the tee base is formed of a horizontal bar located on the back surface of the backing plate and a vertical bar protruding from the horizontal bar, and the groove is formed at one end of the vertical bar, And a fitting groove into which the fitting is inserted is formed.

The gas supply line is divided into a plurality of parts and independently supplies gas, and each of the divided gas supply lines is connected to a gas supply line.

In addition, a mass flow controller (MFC) is mounted on the gas supply line or the gas supply line, and gas supply means for supplying a reactive gas through the gas supply line and supplying a sputter gas to one side of the chamber .

A magnet is disposed on the back surface of the backing plate.

As described above, in the sputtering apparatus of the present invention, the gas supply line for supplying the reaction gas is guided through the titanium base fixing the ground shield, so that the reaction gas is uniformly sprayed directly on the substrate.

This makes it possible to prevent the reaction gas from being partially biased and supplied into the low-process chamber to cause a difference in reactivity on the substrate, by making the reaction gas uniformly exist in the plasma forming space.

This makes it possible to uniformly process the substrate uniformly over the entire surface, thereby preventing the problem that the thickness or physical properties of the thin film to be deposited and etched on the surface of the substrate are not uniform as a whole.

In addition, since the reaction gas is divided and supplied to the respective regions, the composition ratio and the supply amount of the reactive gas injected for each region can be adjusted, thereby preventing the problem that the reactive gas is partially biased and supplied at low rates, There is an effect that can be.

1 is a cross-sectional view schematically showing a sputtering apparatus according to an embodiment of the present invention.
FIG. 2A is an enlarged perspective view of the configuration of the second gas supply means of FIG. 1; FIG.
FIG. 2B is an enlarged perspective view of FIG. 2A. FIG.
3 is a cross-sectional view schematically showing a part of Fig.
4 is a plan view schematically showing a second gas supply means according to an embodiment of the present invention;

Hereinafter, embodiments according to the present invention will be described in detail with reference to the drawings.

1 is a cross-sectional view schematically showing a sputtering apparatus according to an embodiment of the present invention.

As shown, the sputtering apparatus has a process chamber 100 that defines a closed reaction zone as an essential component.

In more detail, the process chamber 100 first provides a closed reaction zone for depositing and etching a thin film on the substrate 101. Although not shown in the drawing, in the process chamber 100, (Openings) for the entrance and exit of the base 101 are formed.

In the process chamber 100, a sputter gas S1, which is an inert gas such as nitrogen (N 2) or argon (Ar), is introduced into the chamber 100 in order to react with the target 120 to atomize the target 120. And an exhaust port 170 connected to an intake system (not shown) to make the interior of the chamber 100 highly vacuumed.

Here, the first gas injection means 150 is configured such that the first gas supply pipe 151 is formed on the side wall of the process chamber 100 so that the sputter gas S1 is supplied through the first gas supply pipe 151 to the process chamber 100). The exhaust port 170 is configured to discharge the residual gas in the internal reaction region through an external intake system (not shown) and to maintain the vacuum pressure.

A predetermined sputter gas S1 is introduced into the reaction chamber of the process chamber 100 in which the substrate 101 is mounted, and then the activated sputter gas S1 is activated The desired thin film processing step is carried out.

Here, a target (target) 120, a backing plate 130, and a magnet 140 are provided on one side of the process chamber 100 of the sputtering apparatus, and a process chamber 100 And the substrate 101 is transported in a standing state close to the vertical direction by the substrate transfer means (not shown).

Such a sputtering apparatus has an advantage that the process efficiency is higher than that of the cluster type in which the substrate 101 is horizontally transported in an in-line manner.

At this time, the substrate 101 is positioned with a certain distance from the target 120, and a reaction region, that is, a plasma forming space E, is formed between the substrate 101 and the target 120.

The heat provided by the heater 180 is transmitted to the substrate 101, and the thickness of the film deposited on the substrate 101 by the heat thus transferred can be kept constant, thereby improving the uniformity of the film.

A chamber shield 190 is provided at the edge of the process chamber 100 to prevent the deposition material from being deposited on the inner wall of the process chamber 100 during the deposition process for the substrate 101.

Here, the target 120 is made of the same material as the deposition material to be deposited on the substrate 101. Depending on the film to be formed, aluminum (Al), an aluminum alloy (AlNd), chromium (Cr), molybdenum ), And the like.

Each of the targets 120 has a long bar shape having a predetermined width, and the targets 120 are arranged in parallel with each other at a predetermined interval.

The backing plate 130 is provided to correspond to each of the plurality of targets 120 to fix the respective targets 120 and apply a voltage to the respective targets 120.

A voltage is applied to the backing plate 130 from an external voltage source (not shown).

A plurality of ground shields 210 serving as anodes opposed to the target 120 are provided between adjacent targets 120. The plurality of ground shields 210 are connected to the backing plate Base 220 located on the back surface of the backing plate 130 so as not to be in contact with the target 120 and the target 120, respectively.

At this time, the tee base 220 is made of an insulating material.

Accordingly, when the backing plate 130 functions as a first electrode and the ground shield 210 serves as a second electrode, when a voltage is externally applied to the backing plate 130, the first electrode (i.e., the backing plate 130) and the second electrode (that is, the ground shield 210), and the sputter gas S1 is excited by the discharge to become plasma

A plurality of magnets 140 are disposed on the back surface of each backing plate 130 to generate a magnetic field so as not to contact the titanium base 220 at a predetermined interval.

The plurality of magnets 140 correspond to the respective targets 120 so that the N poles and the S poles are arranged alternately to the left and the right to form a magnetic field between the N pole and the S pole of the magnet 140, The plasma generated in the plasma generating space E is trapped near the substrate 101 by the magnetic field between the N and S poles of the target 120. The target 120 is separated from the target 120 and collides with the sputter gas S1, Thereby restricting the particles to the vicinity of the surface of the substrate 101 to increase the efficiency of ion generation of the particles.

By thus positioning the magnet 140 corresponding to each target 120, the magnetic field across each target 120 can be controlled and adjusted.

The plurality of magnets 140 are coupled to the moving unit 141 and are reciprocated in parallel along the arrangement direction of the target 120, thereby improving the use efficiency of the target 120.

In particular, the sputtering apparatus of the present invention is provided with a second gas injection means 160 for supplying a reaction gas S2 for reactive sputtering into the process chamber 100, And a second gas supply pipe 161 located on the back surface of the second gas supply pipe 140.

That is, the sputtering apparatus can form a thin film on the substrate 101 through reactive sputtering by introducing a reactive gas S2 such as HBr or Cl2 together with the sputter gas S1. The reactive sputtering is performed by the reactive gas S2 May be supplied into the process chamber 100 to cause the reactive gas S2 to react with the atoms emitted from the target 120 so as to be sputtered directly on the substrate 101 or reacted again with the free target material, Thereby producing a film sputtered on the substrate 101.

At this time, the reaction gas S2 must be uniformly sprayed on the substrate 101 because it reacts with atoms emitted from the target 120 directly and is deposited on the substrate 101 in a compound state.

To this end, the sputtering apparatus of the present invention is characterized in that the second gas injection means 160 further comprises a plurality of gas supply lines 163 (see FIG. 2A) which branch and extend from the second gas supply line 161 do.

A plurality of gas supply lines 163 (see FIG. 2A) branched from the second gas supply line 161 are arranged across the center of the ground shield 210, and the gas supply line 163 (see FIG. A plurality of ejection openings 165 (see FIG. 2A) are formed along the longitudinal direction.

Therefore, in the sputtering apparatus of the present invention, the reactive gas S2 can be uniformly injected directly into the plasma forming space E.

That is, in the sputtering apparatus of the present invention, the reactive gas S2 is directly supplied to the plasma forming space E between the substrate 101 and the target 120, It is possible to prevent the problem that the reactivity of the reaction gas S2 is partially shifted and supplied to the interior of the low-process chamber 100 to cause a difference in reactivity on the substrate 101. [

Therefore, it is possible to prevent the film quality such as the resistivity value from being unevenly formed in the substrate 101.

FIG. 2A is a perspective view showing an enlarged configuration of the second gas supply means of FIG. 1, and FIG. 2B is an enlarged perspective view of FIG. 2A.

3 is a cross-sectional view schematically showing a part of FIG. 2. FIG.

As shown in the figure, a plurality of targets 120 having a predetermined width are arranged at regular intervals from each other, and each target 120 is fixed to each backing plate 130 corresponding to each other. At this time, the ground shield 210 is fixedly positioned by the tee base 220 in a space between the plurality of targets 120.

A magnet 140 is disposed on the back surface of the backing plate 130 and a second gas supply pipe 161 of the second gas supply means 160 is provided on the back surface of the magnet 140.

At this time, the tee base 220 is positioned on the back surface of the backing plate 130 and extends along the longitudinal direction of the horizontal bar 221 and the horizontal bar 221 having a long bar shape along the longitudinal direction of the backing plate 130 And a vertical bar 223 vertically protruding from the central portion of the horizontal bar 221 so that the overall shape is a "T" shape.

A vertical bar 223 of the tee base 220 is protruded from the backing plate 130 and the target 120 so that the ground shield 210 is interposed between adjacent targets 120 .

At this time, the ground shield 210 has a fitting groove 213 for inserting the edge of the vertical bar 223 into the one surface of the tee base 220. The ground shield 210 is connected to the tee base 220 Its position is fixed.

The edge of the vertical bar 223 protruded from the horizontal bar 221 of the tee base 220 is protruded above the backing plate 130 so that the ground shield 210 fixed by the tee base 220 And is not positioned on the same line as the target 120.

Therefore, since the ground shield 210 is positioned above the target 120, the backing plate 130, the target 120, and the ground shield 210 are kept in an insulated state without contacting each other.

Particularly, in the tee base 220 of the present invention, a groove 225 is formed in the edge of the vertical bar 223 along the longitudinal direction of the vertical bar 223, The gas supply line 163 branched from the supply line 161 is guided.

The gas supply line 163 is provided with a plurality of jetting ports 165 along the longitudinal direction and a gas supply line 163 is connected to the ground shield 210 mounted on the vertical bar 223 of the tee base 220. [ A plurality of ejection holes 215 are formed corresponding to the plurality of ejection openings 165 formed in the substrate.

The reaction gas S2 supplied through the gas supply line 163 is injected into the plasma forming space E along the longitudinal direction of the tee base 220. [

Therefore, the reaction gas S2 is uniformly injected into the plasma forming space E like the porous showerhead.

That is, in the sputtering apparatus of the present invention, the second gas supply means (160 in FIG. 1) for supplying the reactive gas (S2) injects the reactive gas (S2) uniformly and directly onto the front surface of the substrate .

As described above, in the sputtering apparatus of the present invention, since the reaction gas S2 is uniformly injected onto the substrate 101 (shown in Fig. 1), the reaction gas S2 is uniformly present in the plasma forming space E. Therefore, it is possible to prevent the problem that the reaction gas S2 is partially shifted and supplied into the low-process chamber (100 in FIG. 1) to cause a difference in reactivity on the substrate (101 in FIG. 1).

As a result, the processing of the substrate (101 in FIG. 1) can proceed uniformly over the entire surface, and the thickness or physical properties of the thin film deposited and etched on the surface of the substrate (101 in FIG.

Arcing can be prevented from occurring in the space between the targets 120 by providing the ground shield 210 in the space between the targets 120. That is, since the charges do not easily escape to the ground, an arcing problem occurs due to accumulation of charge in a certain region in the plasma forming space E. In the sputtering apparatus of the present invention, the ground shield 210 is positioned between the targets 120 , It is possible to prevent occurrence of such arcing.

In addition, since the ground shield 210 is positioned adjacent to the target 120, it is possible to prevent the shadow of the substrate 101 from being generated due to the ground shield 210.

Further, in the sputtering apparatus of the present invention, the reaction gas (S2) is divided and supplied into a plurality of regions, so that the component ratio and supply amount of the reaction gas (S2) can be freely adjusted and supplied to each divided region.

4 is a plan view schematically showing a second gas supply unit according to an embodiment of the present invention.

Here, for convenience of explanation, the ground shield (210 in FIG. 3) located above the gas supply lines 163a, 163b, and 163c is not shown.

The gas supply lines 163a, 163b and 163c extending from the second gas supply pipes 160a, 160b and 160c located on the back surface of the backing plate 130 are connected to the ground shield 210 And is positioned between adjacent targets 120 that are guided by the fixing base 220.

Here, the gas supply lines 163a, 163b, and 163c are formed along the longitudinal direction of the target 120, and the gas supply lines 163a, 163b, and 163c are divided into a plurality of .

The gas supply lines 163a, 163b and 163c may be divided into first to third gas supply lines 163a, 163b and 163c along the longitudinal direction of the target 120, A plurality of second gas supply pipes 160a, 160b and 160c are provided on the back surface of the first gas supply line 130 and are connected to the first to third gas supply lines 163a, 163b and 163c, respectively.

That is, for convenience of description, the second gas supply pipes 160a, 160b, 2-2 and 2-3 gas supply pipes, and the gas supply lines 163a, 163b, and 163c, which are guided along the longitudinal direction of the target 120, The second gas supply line 160a is connected to the first gas supply line 163a and the second gas supply line 160b is connected to the second gas supply line 163a, 163b.

The second gas supply pipe 160c is connected to the third gas supply line 163c.

At this time, the connection between the first to third gas supply lines 163a, 163b, 163c and the second to second to third gas supply pipes 160a, 160b, 160c located on the back surfaces of the backing plate 130 The tie base 220 for guiding the first to third gas supply lines 163a, 163b, and 163c is also divided.

Here, a mass flow controller (not shown) is mounted on each of the first to third gas supply pipes 160a, 160b and 160c or the first to third gas supply lines 163a, 163b and 163c , Thereby controlling the amount of the reaction gas (S2 in Fig. 3).

The MFC (not shown) is a mass flow rate adjusting device, and the flow rate can be adjusted based on the mass of the reaction gas (S2 in FIG. 3). Through this, the second to the second gas supply pipes 160a, 160b, (S2 in FIG. 3) supplied to the first to third gas supply lines 163a, 163b, and 163c.

At this time, when the MFC (not shown) is mounted on the first to third gas supply lines 163a, 163b, 163c, only one gas supply pipe 160a, 160b, 160c may be located.

Therefore, the reaction gas (S2 in FIG. 3) can be divided into the first to third regions B1, B2, and B3 to adjust the gas composition ratio and the supply amount.

In other words, the reaction gas (S2 in FIG. 3) supplied to the second-1 gas supply pipe 160a is regulated in proportion to the composition of the gas and the supply amount thereof through the first gas supply line 163a, 3) of the reaction gas (S2 in FIG. 3) supplied to the second-second gas supply pipe 160b is regulated and supplied through the second gas supply line 163b, 3) of the reaction gas (S2 in FIG. 3) supplied to the gas supply pipe 160c is supplied to the plasma forming space (E in FIG. 3) through the third gas supply line 163c and the gas component ratio and the supply amount thereof are adjusted .

Therefore, the first to third regions B1, B2, and B3 can be freely controlled by adjusting the composition ratio and supply amount of the reaction gas (S2 in FIG. 3) supplied to the first to third gas supply lines 163a, 163b, As shown in FIG.

3). As a result, the reaction gas (S2 in FIG. 3) can be independently supplied to the central portion and the edge portion of the substrate (101 in FIG. 1) or to the upper, middle, and lower regions of the substrate (101 in FIG. Therefore, it is possible to prevent the composition ratio, the supply amount, and the like of the reaction gas (S2 in Fig. 3) injected onto the actual substrate (101 in Fig. 1) from varying according to the process environment of the processing of the substrate (101 in Fig.

One end of the gas supply lines 163a, 163b and 163c is connected to the second gas supply pipes 160a, 160b and 160c, and the gas supply lines 163a, 163b and 163c are connected to the second gas supply pipes 160a, 160b and 160c through one end thereof, 2b) at the one end side of the gas supply lines 163a, 163b, 163c close to the second gas supply pipes 160a, 160b, 160c when a gas (S2 in Fig. 3) (S2 in FIG. 3) is injected, and a relatively small amount of the reaction gas (S2 in FIG. 3) is injected as the gas is further away from the second gas supply pipes 160a, 160b and 160c.

Therefore, the reaction gas (S2 in FIG. 3) is partially biased and supplied into the low-process chamber (100 in FIG. 1) to cause a difference in reactivity on the substrate (101 in FIG. 1) 1 < / RTI > < RTI ID = 0.0 > 101), < / RTI >

At this time, the present invention divides the gas supply lines 163a, 163b, 163c into a plurality of gas supply lines 163a, 163b, 163c, It is possible to prevent the problem that a difference in reactivity occurs on the substrate (101 in FIG. 1) due to the bias of the reaction gas (S2 in FIG. 3)

Thus, the processing of the substrate (101 in FIG. 1) can be uniformly performed over the entire surface, and the thickness or physical properties of the thin film deposited and etched on the surface of the substrate (101 in FIG. 1) can be uniformed as a whole.

As described above, in the sputtering apparatus of the present invention, the gas supply lines 163a, 163b, and 163c for supplying the reactive gas (S2 in FIG. 3) are connected to the titanium base 220 to which the ground shield So that the reaction gas (S2 in Fig. 3) is uniformly sprayed onto the substrate (101 in Fig. 1).

3) of the reaction gas (S2 in FIG. 3) is uniformly present in the plasma forming space (E in FIG. 3) It is possible to prevent a problem that a difference in reactivity on the substrate (101 in FIG. 1) is generated.

Thus, the processing of the substrate (101 in FIG. 1) can be uniformly performed over the entire surface, and the thickness or physical properties of the thin film deposited and etched on the surface of the substrate (101 in FIG. 1) can be uniformed as a whole.

3) can be adjusted by controlling the supply of the reaction gas (S2 in Fig. 3) by the region, so that the reaction gas (S2 in Fig. 3) It is possible to prevent a problem that a difference in reactivity occurs on the substrate (101 in FIG.

Although the gas supply lines 163a, 163b, and 163c guided by the tip base 220 have been described only for supplying the reactive gas (S2 in FIG. 3) for reactive sputtering, The gas supply lines 163a, 163b, and 163c guided by the gas supply lines 163a, 163b, and 163c may supply the sputter gas (S1 in Fig. 1). At this time, the first gas supply means (150 in Fig. 1) of the process chamber (100 in Fig. 1) can be eliminated.

In the foregoing description, an inline type sputtering apparatus in which a substrate (101 in FIG. 1) is transported in a state of standing vertically close to the substrate is described as an example. However, the present invention is applicable to a cluster type sputtering apparatus It is also applicable.

The present invention is not limited to the above-described embodiments, and various modifications may be made without departing from the spirit of the present invention.

120: target, 130: backing plate, 163: gas supply line, 210: ground shield
220: Tee base (221: Horizontal bar, 223: Vertical bar, 225: Groove)
S2: Reaction gas
E: Plasma forming space

Claims (8)

A chamber defining a reaction zone in which the substrate is located;
A target disposed in the chamber and spaced a predetermined distance from the substrate and corresponding to one surface of the target, the targets being spaced apart from each other by a predetermined distance;
A plurality of backing plates positioned on opposite sides of each of the targets to secure the respective targets;
A gas supply pipe located on the back surface of the backing plate;
A ground shield positioned between said adjacent targets;
A tee base fixing the ground shield and having a groove formed therein;
A gas supply line extending from the gas supply pipe and guided by the grooves of the tee base,
And an ejection hole corresponding to the ejection port is formed in the ground shield.
The method according to claim 1,
Wherein the tibe base is formed of a horizontal bar located on the back surface of the backing plate and a vertical bar protruding from the horizontal bar, and the groove is formed at one end of the vertical bar.
3. The method of claim 2,
Wherein the ground shield has a fitting groove into which one end of the vertical bar is inserted.
The method according to claim 1,
Wherein the gas supply line is divided into a plurality of divided portions, and the gas is independently supplied.
5. The method of claim 4,
Wherein the divided gas supply lines are each connected to a gas supply line.
5. The method of claim 4,
Wherein a mass flow controller (MFC) is mounted on the gas supply line or the gas supply line.
The method according to claim 1,
And a gas supply means for supplying a reactive gas through the gas supply line and supplying a sputter gas to one side of the chamber.
The method according to claim 1,
And a magnet is disposed on a back surface of the backing plate.

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