KR102085335B1 - Plasma cvd apparatus - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma chemical vapor deposition apparatus, and more particularly, to a plasma chemical vapor deposition apparatus in which a structure of an electrode and a magnetic field generator is changed in order to increase the density of plasma and effectively locate a plasma generation zone. In the plasma chemical vapor deposition apparatus for depositing a film on the surface of the object to be coated within, a pair of electrodes are disposed facing each other and spaced apart from each other, as long as the electrodes are wrapped around the electrode and open toward the center of the chamber And a pair of magnetic field generating units, a gas supply unit supplying a reaction gas between the pair of electrodes, and a precursor supply unit supplying a precursor between the pair of electrodes, wherein a magnetic field is formed between the pair of magnetic field generating units. In addition, the magnetic field is formed in each magnetic field generating unit Provides a plasma chemical vapor deposition apparatus as a.

Description

Plasma Chemical Vapor Deposition Apparatus {PLASMA CVD APPARATUS}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma chemical vapor deposition apparatus, and more particularly, to a plasma chemical vapor deposition apparatus in which the structure of the electrode and the magnetic field generating apparatus is changed in order to increase the density of plasma and effectively locate the plasma generation zone.

In general, chemical vapor deposition is a technique in which a gaseous source gas containing a desired material is decomposed by receiving energy from heat or plasma when it is injected into a reactor, and the desired material reaches a substrate to form a film.

That is, the gas injected into the reactor refers to a process of forming a thin film through a chemical reaction on a heated substrate, and is mainly used in an integrated circuit manufacturing process such as a semiconductor.

Among them, the plasma chemical vapor deposition method is made into a plasma state by applying a very high frequency at a strong voltage using a power supply device to the gaseous raw gas injected into the chamber of the vacuum, and the electrons having a negative charge using a magnetic field generator again. It refers to a method of forming a thin film on a substrate by separating a positively charged nucleus to maintain an ionic state and then a part thereof undergoes a physical or chemical reaction.

Unlike the general chemical vapor deposition method which requires high temperature thermal energy, the plasma chemical vapor deposition method promotes a chemical reaction using plasma, so that the thin film manufacturing process can be performed at a relatively low temperature. Problems can be solved. Therefore, at present, it is widely used in the process of forming a thin film of an insulating film, a metal film, an organic film, such as an organic light emitting device, a liquid crystal display device such as a semiconductor device.

On the other hand, in order to increase the deposition efficiency of the thin film through the plasma chemical vapor deposition method to increase the density of the plasma generated by increasing the ionization rate of the precursor in the vacuum chamber of the device, next, the bonding ratio with the reaction gases in the plasma state, That is, the reactivity of the material should be increased, and the plasma should be smoothly generated by preventing contamination of the electrode by the precursor.

However, in the conventional plasma chemical vapor deposition apparatus, the magnetic field generating device is located at the rear of the electrode, so that the plasma zone is generated on the surface of the electrode, whereby the plasma generating position and the precursor actual reaction position are different. Therefore, since the plasma density decreases at the deposition site, only a part of the ions participate in the reaction, and thus there is a problem that the deposition efficiency is lowered.

Related prior arts include Korean Patent Publication No. 10-2011-0118622 (published date: October 31, 2011).

The present invention was created in order to solve the above problems, and concentrating the ions in the plasma state generated by the electrode using a magnetic field generating device and at the same time controlling the shape and position of the plasma zone to the plasma where the actual deposition takes place It is to provide a plasma chemical vapor deposition apparatus that can increase the density of the electrode and prevent the contamination of the electrode due to the inflow of the precursor to increase the deposition efficiency.

Technical problems to be achieved by the present invention are not limited to the above-mentioned technical problems.

Plasma chemical vapor deposition apparatus for depositing a film on the surface of the object to be coated in the vacuum chamber of the present invention for achieving the above object, and a pair of electrodes disposed facing each other spaced apart from each other, the electrode wrapped around the And a pair of magnetic field generators to be opened toward the center of the chamber, a gas supply unit supplying a reaction gas between the pair of electrodes, and a precursor supply unit supplying a precursor between the pair of electrodes. A magnetic field may be formed between the pair of magnetic field generators, and a magnetic field may be formed in an inner space surrounded by the magnetic field generator.

In detail, the electrode may be formed in an elliptical shape and include a cooling channel therein.

In detail, the magnetic field generating unit may include a magnetic shunt and a plurality of magnets disposed therein.

Specifically, the plurality of magnets may be arranged such that adjacent magnets are connected to different polarities.

Specifically, the magnetic shunt may be characterized in that the terminal is flat and the edge of the terminal extends sharply in both directions.

Specifically, the magnetic field generating unit may be characterized in that a magnet is disposed inside the magnetic shunt so that the terminal and the center of the magnetic shunt face each other with different polarities.

Specifically, between the end portion and the center of the magnetic shunt may be spaced apart from each other by a predetermined interval so as to form a magnetic field to increase the rotational movement of the electron.

Specifically, the magnetic field formed between the end portion and the center portion of the magnetic shunt may be maintained at a predetermined angle with the inner surface of the electrode.

Specifically, the magnetic field generating unit may be characterized in that a magnet is disposed inside the magnetic shunt so that magnetic shunt terminations facing each other face each other with different polarities.

Specifically, the magnetic field generating unit may be characterized in that the magnetic shunt end portions facing each other are spaced apart from each other by a predetermined interval so that a magnetic field for enhancing the rotational movement of electrons is formed between the magnetic shunt end portions facing each other.

Specifically, it may be characterized in that it further comprises a contaminant inflow prevention unit disposed in the center of the magnetic field generating unit and formed in a board shape of a predetermined height.

Specifically, the contaminant inflow prevention unit may be spaced apart from the electrode by a predetermined distance so as to prevent the electrode is sputtered by a cation, the interval may be characterized in that 15mm to 40mm.

Specifically, the pair of electrodes may be characterized in that the upper side is spread on both sides in order to perform the deposition operation in a radial form.

Specifically, the precursor supply unit may be located between the pair of magnetic field generators, but located below the chamber.

Specifically, the gas supply unit may be located on both sides of the chamber, but at a middle height of the chamber.

As described above, the present invention maintains a certain angle with the surface of the electrode by using a magnetic field generating device and concentrates the plasma ions at the position where the actual deposition reaction occurs, thereby increasing the plasma density and increasing the deposition efficiency. It works.

In addition, by installing a contaminant inlet device at a position spaced apart from the electrode to prevent the precursor is attracted to the electrode to prevent the contamination of the electrode to prevent the deposition efficiency is reduced.

Therefore, since the present invention has a higher deposition efficiency than the conventional apparatus, it is possible to save the amount of precursor and reactant gas to be used, and thus the operation of the apparatus is more efficient.

1 is a conceptual diagram of a plasma chemical vapor deposition apparatus according to an embodiment of the present invention.
FIG. 2 is a diagram illustrating a magnetic field generated in the plasma chemical vapor deposition apparatus shown in FIG. 1.
3 is a view showing a plasma zone formed in the plasma chemical field deposition apparatus shown in FIG.
4 is a view showing the flow of the reaction gas and the precursor in the plasma chemical vapor deposition apparatus shown in FIG.
5 is a view showing the flow of cations and electrons in the plasma chemical vapor deposition apparatus shown in FIG.
FIG. 6 is a conceptual diagram illustrating a flow of a reaction gas and a precursor in another embodiment of the plasma chemical vapor deposition apparatus illustrated in FIG. 1.

Hereinafter, with reference to the accompanying drawings will be described in detail a preferred embodiment of the present invention. Like elements in the figures are denoted by the same reference numerals wherever possible. In addition, detailed descriptions of well-known functions and configurations that may unnecessarily obscure the subject matter of the present invention will be omitted.

1 is a conceptual diagram of a plasma chemical vapor deposition apparatus according to an exemplary embodiment of the present invention, in which the plasma chemical vapor deposition apparatus 100 includes a pair of electrodes 111 and 113 facing each other and spaced apart from each other. And a pair of magnetic field generators 120 which surround the electrodes 111 and 113 but have a center direction of the chamber 10 open, and supply a reaction gas between the pair of electrodes 111 and 113. And a precursor supply unit 140 supplying a precursor between the gas supply unit 130 and the pair of electrodes 111 and 113.

The electrode unit 110 has an elliptical shape and includes a first electrode 111 and a second electrode 113 that form a closed loop, and are disposed on both sides of the inside of the chamber 10 to face each other, It includes a cooling water passage 117 to prevent heat generation.

In addition, an insulator 115 for protecting the electrode of the electrode unit 110 is mounted between the magnetic field generating unit 120 and the electrode unit 110 to be described below.

A cross section of the electrode unit 110 is shown in FIG. 1, where the first electrode 111 is shown on the upper left and lower sides inside the chamber 10, and the second electrode 113 is on the right upper and lower sides inside the chamber 10. Is shown.

The electrode unit 110 receives various power sources such as alternating current, direct current, ultra-high frequency, and electron beam from the power supply unit 160 and serves to make the gas inside the chamber 10 into a plasma state.

For example, the inside of the chamber 10 is evacuated to about 10 ^-3 torr, and the process gas is introduced therein. When an AC power is applied to the electrode of the electrode unit 110, the anode and the cathode are alternated between the first electrode 111 and the second electrode 113, and the reaction gas is separated into a cation and a primary electron, thereby becoming a plasma state. . Here, the reaction gas in the plasma state is a positive electrode and a negative electrode by the alternating current power applied to the first and second electrodes 111 and 113, so that the positive and negative electrons are the two electrodes. A reciprocating movement between them (see FIG. 5).

The magnetic field generating unit 120 is disposed to surround the electrode unit 110, and the center direction of the chamber 10 is open, and includes a magnet 121 and a magnetic shunt 123.

Referring to FIG. 1, the magnetic field generating unit 120 completely covers the entire left side of the elliptical first electrode 111 and the upper and lower portions of the first electrode 111, and the right side of the first electrode 111 is The center portion of the right side is opened so as to surround only the portion that is in contact with the first electrode 111. Similarly, the magnetic field generating unit 120 surrounds the second electrode 113 in the same manner by changing only the direction in the second electrode 113.

The external shape of the magnetic field generating unit 120 is made of a magnetic shunt 123 and a plurality of magnets 121 are recessed and disposed inside the magnetic shunt 123.

The magnetic shunt 123 refers to the magnetic shunt, which leads to a branch of the main branch or a magnetic material made for branching. The magnetic material of the magnetic shunt 123 serves to make an appropriate amount of magnetic flux to the side.

That is, magnetic poles formed in any portion of the magnetic shunt 123 are each transmitted with magnetic flux from the nearest magnet 121 to have the same polarity as that of the magnet 121.

As an example, as shown in FIG. 1, a plurality of magnets 121 are disposed above and below the magnetic shunt 123 surrounding the first electrode 111 and above and below the right side of the first electrode 111. In the portion extending from the right side of the magnetic shunt 123 to the upper portion of the magnetic shunt 123, magnets 121 arranged adjacent to each other with different polarities, that is, SN and SN are disposed therein. The lower part of the magnetic shunt 123 is also arranged inside the magnet 121 in the same manner. As the magnet 121 is disposed as described above, N poles are formed at both sides of the contaminant inflow prevention part 150 at the central portion 124 of the left side of the magnetic shunt 123.

In addition, a plurality of magnets 121 are disposed above and below the magnetic shunt 123 surrounding the second electrode 113 and above and below the left side of the second electrode 113. In the portion of the magnetic shunt 123 that extends from the left side, the magnets 121 are disposed such that adjacent magnetic poles have different polarities, that is, NS and NS. The magnet 121 is disposed inside the lower portion of the magnetic shunt 123 in a similar manner. As the magnet 121 is disposed as described above, the S pole is formed at the central portion 124 of the right side surface of the magnetic shunt 123.

In addition, the end portion 125 of the magnetic shunt 123, that is, the upper and lower sides of the right side of the first electrode 111 and the ends of the magnetic shunt 123 disposed above and below the left side of the second electrode 113 may be formed flat. The edges of the ends extend sharply on both sides.

The edges of the end portions 125 of the pair of magnetic field generators 120 are different from each other by placing the magnet 121 in the magnetic shunt 123 surrounding the first electrode 111 and the second electrode 112 as described above. It can be seen that the polarity is opposed and a magnetic field is formed between them (see Fig. 2).

At this time, the magnetic field formed between the pair of magnetic field generators 120 becomes a donut shape as a whole and the cross-section shows the magnetic field divided up and down.

In addition, different polarities are also opposed between the central portion 124 of each magnetic field generating unit 120 and another edge of the terminal portion 125. As an example, the magnet 121 disposed therein and the magnet 121 are disposed. The upper and lower ends of the terminating portion 125 of the magnetic shunt 123 surrounding the first electrode 111 by the magnetic shunt 123 for branching the magnetic flux from the center of the magnetic shunt 123. It becomes N pole, and the magnetic field is formed up and down between them (refer FIG. 2).

Similarly, the upper and lower ends of the terminating portion 125 of the magnetic shunt 123 surrounding the second electrode 113 by the magnet 121 disposed therein and the magnetic shunt 123 branching the magnetic flux from the magnet 121 are arranged. Then, the right central portion 124 of the magnetic shunt 123 becomes the S pole, and a magnetic field is formed vertically therebetween (see FIG. 2).

At this time, the magnetic field formed between the end portion 125 and the central portion 124 of one magnetic field generating unit 120 is a donut shape as a whole and its cross section appears obliquely, as shown in FIG. .

The gas supply unit 130 is positioned between the elliptical first and second electrode portions 111 and 113 to supply reaction gas to the chamber 10, and a plurality of gas supply units 130 are provided on both sides of the chamber 10 (FIG. Not shown).

 In the plasma chemical vapor deposition method, the reaction gas is ejected from the gas supply unit 130 and becomes a plasma state due to the high frequency caused by the excessively high and low voltage between the first and second electrode portions 111 and 113 arranged in pairs.

The gas supply unit 130 is formed at a position spaced a predetermined distance from the precursor supply unit 140 disposed below the chamber 10.

The precursor supply unit 140 for supplying a precursor into the chamber 10 is disposed at a lower portion of the space inside the chamber 10, but the ejection port extends to the center of the chamber 10 so that the first and second electrode portions 111 and 113 are disposed. Is located between).

Precursor refers to a material before it becomes a specific material in a metabolism or reaction, or to a material that can be finally obtained. In chemical vapor deposition, a material before a thin film is formed on a coating such as a substrate. Refers to.

The precursor is also ionized by the high frequency of the electrode unit 110 to become a plasma state. It is then combined with a portion of the reaction gas in the plasma state through physical or chemical reactions and deposited on the substrate, such as a substrate.

That is, the precursor is ejected from the precursor supply unit 140 positioned below the chamber 10 and ionized while passing between the first and second electrodes 111 and 113 to become a plasma state. Reaction with a part of the reaction gas to deposit a coating such as a substrate in the reaction zone 180 located in the center of the chamber (10).

In addition, the precursor supply unit 140 is positioned below the chamber 10 to raise the precursor together with the reaction gas to the upper portion of the chamber 10 so that the precursor or the reaction gas is located at both sides of the chamber 10. ) Can be prevented from entering (see FIG. 4).

The plasma chemical vapor deposition apparatus 100 of the present invention may further include a contaminant inflow prevention part 150 disposed in a board shape having a predetermined height at each center of the pair of magnetic field generators 120.

The contaminant inflow preventing part 150 is positioned at the center 124 of the magnetic shunt 123 located on the left and right sides with respect to the chamber 10 and extends similar to or longer than the length of the first and second electrodes 111 and 113. . That is, referring to FIG. 1, it can be seen that the overall shape of the contaminant inflow preventing part 150 is formed to extend slightly more than the positions of the first and second electrodes 111 and 113, respectively.

In the present invention, each plasma zone 170 having a high plasma density matches the reaction zone 180 where chemical vapor deposition occurs, thereby increasing the deposition efficiency. Thus, the plasma zone 170 and the reaction zone 180 are thus characterized. In this case, the deposition efficiency is increased, but there is a problem of contaminating the electrode unit 110 around the reaction zone 180 (see FIGS. 3 and 4).

Therefore, if an unwanted coating occurs on each electrode of the electrode unit 110, the plasma generation of the precursor and the reaction gas is reduced, so it should be prevented.

In order to prevent this, a structure is required to prevent the precursor from approaching in the direction in which the electrode unit 110 is located. At the same time, it is necessary to prevent the backflow of the precursor by maximizing the flow of the reaction gas requiring the reaction with the precursor.

Therefore, the contaminant inflow prevention part 150 is formed to be spaced apart from the electrode part 1110 by about 15 mm to 40 mm, and in the form, extends from the central portion 124 of the magnetic shunt 123 toward the center of the chamber.

In detail, the distance from the contaminant inflow preventing unit 150 to the electrode unit 110 is a phenomenon in which a cation in a plasma state strikes an electrode that is a cathode, that is, a phenomenon in which sputtering is performed on an electrode so that it cannot have sufficient acceleration energy as a cation. It becomes the distance to be eliminated.

In other words, the precursor ejected from the precursor supply unit 140 located at the bottom of the chamber 10 is disturbed by the contaminant inflow prevention unit 150, and the precursor, which is disturbed once and the moving speed is slowed down, is formed by the electrode unit ( It can be easily dissociated into cations and electrons by the 110, and at the same time, even if it starts moving from the contaminant inflow prevention part 150 to the electrode part 110 again, when it reaches the electrode part 110, sufficient acceleration energy required for sputtering is reached. Will not have

The plasma chemical vapor deposition apparatus 100 of the present invention may include a power supply unit 160 connected to the electrode unit 110 from the outside of the chamber 10.

The power supply unit 160 is located outside the chamber 10 and supplies power to the electrode unit 110 to supply an energy source for making the gas inside the chamber 10 into a plasma state. In order to make the gas into a plasma state, direct current, alternating current, ultra high frequency, electron beam, or the like is applied, and the power supply unit 160 applies direct current, alternating current, ultra high frequency, or electron beam to the electrode unit 110.

In one embodiment of the present invention, using an AC power source, which is relatively easy to operate and low in operation cost, uses a frequency of 20 to 100 kHz according to the size of the capacitance, which is connected to the power supply unit 160 and located at both sides of the chamber 10. AC power is applied to the pair of electrode parts 110, that is, the first and second electrodes 111 and 113, to generate an electric field between the pair of electrode parts 110 and to generate ultra-high frequency.

At this time, the reaction gas and the precursor are separated into a plasma state by receiving this energy, the cations and electrons of the separated gas is alternately reciprocated between the first and second electrodes 111 and 113, again to the original gas molecules It also serves to prevent the reduction to increase the density of the plasma. That is, the power supply unit 160 may apply AC power to the electrode unit 110 to further increase the density of the plasma in the chamber 10, thereby increasing the deposition efficiency of the thin film (see FIG. 5).

The plasma chemical vapor deposition apparatus 100 of the present invention may include a chamber 10 to allow chemical vapor deposition to occur therein.

The chemical vapor deposition method is a method of depositing a solid product generated by a chemical reaction on a substrate by injecting chemical vapor deposition reactants into a high vacuum state inside the chamber 10 using a vacuum pump, and in particular, plasma chemical vapor deposition. In the deposition method, plasma generation and deposition occur simultaneously in the chamber 10.

In addition, the vacuum pump not only serves to make the inside of the chamber 10 in a vacuum state, but also serves to discharge the by-products of the reactive gas and precursor remaining after the reaction is completed inside the chamber 10 to the outside through the outlet.

In the plasma chemical vapor deposition apparatus 100 of the present invention, the density of the plasma can be maximized during the deposition process by matching the position of the magnetic field with the reaction zone 180, even if the vacuum degree in the conventional chemical vapor deposition equipment is kept lower. Sufficient deposition efficiency can be achieved.

3 is a view showing that the plasma zone 170 is formed by applying power to the plasma chemical vapor deposition apparatus configured as described above, and FIG. 4 is a view showing the flow of the precursor and the reactant gas.

The magnetic field formed by the electrode unit 110 inside the chamber 10 exerts a force in a direction perpendicular to the magnetic field according to Fleming's left-hand law on the separated electrons in the reaction gas in the plasma state, and the applied electrons generate the magnetic field. Follow the rotational movement.

The rotational motion of the electrons accelerates the separation of the reaction gas into electrons and cations, resulting in higher plasma density in the magnetic field region.

That is, the plasma zone 170 is formed along the above-described region of the magnetic field, and the first plasma zone 171 is formed above and below the terminal 125 of the magnetic shunt 123 surrounding the first and second electrodes 111 and 113. And a predetermined angle with each of the first and second electrode surfaces 112 and 114 of the electrode unit 110 along a magnetic field formed between the central portion 124 of the magnetic shunt 123 (indicated by 'A' in FIG. 1). ) Is 0 ~ 45 degrees and is formed in donut shape so that it looks oblique in cross section.

The second plasma zone 173 is formed in a donut shape along a magnetic field formed between the end portions of the pair of magnetic field generators 120 so that the second plasma zone 173 is viewed in parallel in the vertical direction.

In this manner, the first plasma zone 171 is formed while maintaining a constant angle (A degree) with each electrode surface, and the second plasma zone 173 is formed in the center of the chamber 10 in parallel with each other. It is possible to wrap around the reaction zone 180 located in the center of 10).

In addition, when the plasma zone 170 has an angle of 0 degrees to the electrode unit 110 and is configured on the side of the electrode unit 110, the plasma is located farther in the reaction zone 180. Is maintained at 0 to 45 degrees, which is a certain angle (A degree), with the first electrode surface 112, which is the movement of electrons and cations at 90 degrees which is a predetermined angle with the first electrode 111 and the second electrode 113. Makes it easy.

On the other hand, in the conventional plasma chemical vapor deposition apparatus, a plasma is generated directly in front of the electrode, and the distance between the area where the actual chemical vapor deposition takes place and the plasma zone is about 50-100 mm apart, so that the density of ions contributing to the deposition is relatively high. Although low in the present invention, the first and second plasma zones 171 and 173 and the reaction zone 180 can be as close as possible to increase the chemical reaction for deposition on the coated object to increase the deposition efficiency.

In other words, in the present invention, the region where the precursors dissociated into electrons and cations become more reactive, that is, the high-density plasma region closely matches the reaction zone 180, thereby maximizing the binding of the precursor and the reaction gas on the coating material. High quality thin film production is possible with high deposition rate even under low electric field energy.

FIG. 6 illustrates another embodiment of the present invention in which an upper portion of the first and second electrodes 111 and 113 positioned above the chamber 10 is opened in the plasma chemical vapor deposition apparatus 100 shown in FIG. 1. It is a conceptual diagram showing the reaction gas and the flow of the precursor together.

According to the shape of the coating body, if a radial coating shape is required, the outlet direction corresponding to the upper part among the first and second electrodes 111 and 113 in order to allow the flow of the precursor and the reaction gas to radially spread out. It is spaced apart.

As described above, the plasma chemical vapor deposition apparatus 100 forms a magnetic field that surrounds the reaction zone 180 by appropriately arranging the magnetic field generating unit 120 on the back of the electrode unit 110 to form a magnetic field that surrounds the reaction zone 180. By forming the 170 to match the reaction zone 180 and the plasma zone 170 where the actual deposition reaction takes place as much as possible has the effect of increasing the deposition efficiency of the plasma chemical vapor deposition apparatus 100.

In addition, the magnetic field surrounding the reaction zone 180 increases the ionization rate of the reaction gas by increasing the ionization rate of the reaction gas by infinitely rotating and hopping the electrons in the gas in the plasma state to increase the deposition efficiency of the plasma chemical vapor deposition apparatus 100. It can increase the effect.

In addition, the gas in the plasma state is evenly disposed around the coated object by the magnetic field surrounding the reaction zone 180, thereby maintaining the density of the plasma uniformly, thereby forming a thin film uniformly. That is, while having a high deposition efficiency, at the same time there is an effect to increase the quality of the product by making the thin film deposited on the coating more uniform.

In addition, the contaminant inflow prevention part 150 is formed at a position spaced apart from the electrode of the electrode part 11 by the plasma density increased during the deposition process, so that the electrode of the electrode part 110 prevents contamination and thereby the plasma chemical vapor deposition apparatus. There is an effect that the deposition efficiency of (100) can be prevented from being lowered.

In addition, since the plasma chemical vapor deposition apparatus 100 of the present invention has a higher deposition efficiency compared to the conventional chemical vapor deposition equipment, unlike the conventional chemical vapor deposition equipment, the chamber 10 may be deposited at a low vacuum degree. There is an effect that can be carried out and to reduce the burden on the vacuum pump.

In addition, by increasing the plasma density, it is possible to have a higher deposition efficiency under the same conditions compared to the conventional plasma vapor deposition equipment, thereby saving the amount of precursor and reactant gas required for the chemical vapor deposition process is more economical Effective operation of the device is possible.

The chemical vapor deposition apparatus of the present invention as described above is not limited to the configuration and operation of the embodiments described above. The above embodiments may be configured such that various modifications may be made by selectively combining all or part of the embodiments.

10: chamber
110: electrode portion 111: first electrode
112: first electrode surface 113: second electrode
114: second electrode surface 115: electrode insulator
117: coolant 120: magnetic field generating unit
121: magnet 123: magnetic shunt
130: gas supply unit 140: precursor supply unit
150: contaminant inflow prevention unit 160: power supply unit
170: plasma zone 171: first plasma zone
172: second plasma zone 180: reaction zone

Claims (15)

A plasma chemical vapor deposition apparatus for depositing a film on a surface of a coating object in a vacuum chamber,
An electrode unit in which a pair of electrodes face each other and are spaced apart from each other;
A pair of magnetic field generators surrounding the electrode but open toward the center of the chamber;
A gas supply unit supplying a reaction gas between the pair of electrodes; And
A precursor supply unit for supplying a precursor between the pair of electrodes; a magnetic field is formed between the pair of magnetic field generators, and a magnetic field is also formed in an inner space surrounded by the magnetic field generator.
The magnetic field generating unit is composed of a magnetic shunt and a plurality of magnets are disposed inside the magnetic shunt, the magnetic shunt has a flat end portion and a sharp edge extending in both directions.
The magnetic field generating unit, a magnet is disposed inside the magnetic shunt so that the end portion and the central portion of the magnetic shunt face with different polarities,
Between the end portion and the center of the magnetic shunt are spaced apart from each other by a predetermined interval to form a magnetic field to increase the rotational movement of the electron,
The magnetic field generating unit has a magnet disposed inside the magnetic shunt such that magnetic shunt terminations facing each other face each other with different polarities,
The magnetic field generating unit is spaced apart from each other by a predetermined interval between the magnetic shunt end portions facing each other so that a magnetic field for enhancing the rotational movement of electrons is formed between the magnetic shunt end portions facing each other.
Plasma chemical vapor deposition apparatus disposed in the center of the magnetic field generating portion and formed in the form of a board having a predetermined height, extending from the center of the magnetic shunt toward the center of the chamber.
The method according to claim 1,
The electrode has an elliptical shape and includes a cooling channel therein.
delete The method according to claim 1,
The plurality of magnets, the plasma chemical vapor deposition apparatus, characterized in that the adjacent magnets are arranged so as to have a different polarity
delete delete delete The method according to claim 1,
The magnetic field formed between the end portion and the center of the magnetic shunt maintains a constant angle with the inner surface of the electrode.
delete delete delete The method according to claim 1,
The contaminant inflow prevention unit is spaced apart from the electrode to prevent the sputtering of the electrode by a cation, the plasma chemical vapor deposition apparatus, characterized in that the interval is 15mm to 40mm.
The method according to claim 1,
The pair of electrodes, the top of the plasma chemical vapor deposition apparatus, characterized in that the top of both sides to perform the deposition operation in a radial form.
The method according to claim 1,
The precursor supply unit is located between the pair of magnetic field generating unit, the plasma chemical vapor deposition apparatus, characterized in that located below the chamber.
The method according to claim 1,
The gas supply unit, the plasma chemical vapor deposition apparatus characterized in that the plurality of which is located on both sides of the chamber is located at the middle height of the chamber.

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