KR20190011468A - Plasma cvd apparatus - Google Patents

Abstract

The present invention relates to a plasma chemical vapor deposition (CVD) apparatus and, more specifically, to a plasma CVD apparatus which modifies a structure of an electrode and a magnetic field generator to increase the density of plasma and effectively place a plasma generation zone. According to the present invention, the plasma CVD apparatus to deposit a film on a surface of an object to be coated in a vacuum chamber comprises: an electrode unit having a pair of electrodes facing each other and spaced apart from each other; a pair of magnetic field generation units surrounding the electrode and disposed by opening a central part of a chamber; a gas supply unit to supply reaction gas between the pair of electrodes; and a precursor supply unit to supply a precursor between the pair of electrodes. A magnetic field is formed between the pair of magnetic field generation units and is also formed in each magnetic field generation unit.

Description

TECHNICAL FIELD [0001] The present invention relates to a PLASMA CVD APPARATUS,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma chemical vapor deposition apparatus, and more particularly, to a plasma chemical vapor deposition apparatus in which structures of electrodes and a magnetic field generating apparatus are changed in order to increase plasma density and effectively position a plasma generation zone.

Generally, chemical vapor deposition (CVD) is a technique for forming a film by depositing a desired material on a substrate, when a gaseous raw material gas containing a desired substance is injected into the reactor and is decomposed by receiving energy from heat or plasma.

That is, the gas injected into the reactor forms a thin film through a chemical reaction on a heated substrate, and is mainly used in an integrated circuit manufacturing process such as a semiconductor.

In the plasma chemical vapor deposition method, a plasma is formed by applying a very high voltage to a gaseous raw material gas injected into a vacuum chamber using a power supply device, and then, by using a magnetic field generator, A method of forming a thin film on a substrate by partially or physically or chemically reacting a part thereof after maintaining the ion state by separating into a positively charged nucleus.

Since the plasma chemical vapor deposition method promotes a chemical reaction by using plasma, unlike a general chemical vapor deposition method which requires high temperature thermal energy, it is possible to perform a thin film manufacturing process at a relatively low temperature, Problems and the like can be solved. Therefore, it is currently widely used in thin film formation processes of semiconductor devices, insulating films such as organic light emitting devices, liquid crystal display devices, metal films, organic films and the like.

In order to increase the deposition efficiency of the thin film through the plasma chemical vapor deposition method, it is necessary to increase the ionization rate of the precursor in the vacuum chamber of the apparatus to increase the density of the generated plasma. Next, That is, it is necessary to increase the reactivity of the material and to prevent contamination of the electrode due to the precursor, so that plasma generation can be smoothly performed.

However, in the conventional plasma chemical vapor deposition apparatus, a magnetic field generating device is positioned on the rear surface of the electrode, and a plasma zone is generated on the surface of the electrode, so that the position where the plasma is generated differs from the actual reaction position of the precursor. As a result, the plasma density is lowered at the sites where the deposition occurs, so that only a part of the ions participates in the reaction and the deposition efficiency is lowered.

Related prior art is Korean Patent Publication No. 10-2011-0118622 (published on October 31, 2011).

SUMMARY OF THE INVENTION The present invention has been made in order to solve the above problems, and it is an object of the present invention to provide a plasma processing apparatus and a plasma processing method in which plasma ions generated by electrodes are concentrated using a magnetic field generator, And a plasma chemical vapor deposition apparatus capable of increasing the deposition efficiency by preventing the contamination of the electrode due to the inflow of the precursor.

The technical objects to be achieved by the present invention are not limited to the above-mentioned technical problems.

According to an aspect of the present invention, there is provided a plasma chemical vapor deposition apparatus for depositing a film on a surface of a coating material in a vacuum chamber of the present invention. The plasma chemical vapor deposition apparatus includes an electrode unit having a pair of electrodes spaced apart from each other, And a precursor supply unit for supplying a precursor between the pair of electrodes, wherein the precursor supply unit includes a pair of magnetic field generating units that open to the center of the chamber, a gas supply unit that supplies a reaction gas between the pair of electrodes, A magnetic field is formed between the magnetic field generating portions of the pair and a magnetic field is formed in the inner space surrounded by the magnetic field generating portion.

Specifically, the electrode may be formed in an elliptical shape and include a cooling water channel therein.

Specifically, the magnetic field generating unit may be formed of an magnetic shunt, and a plurality of magnets may be disposed inside the magnetic field generating unit.

Specifically, the plurality of magnets may be arranged so that adjacent magnets are connected to each other at different polarities.

Specifically, the magnetic shunt may be characterized in that the terminal end is flat and the edge of the terminal end is pointed in both directions.

Specifically, the magnetic field generator may be characterized in that the magnets are disposed inside the magnetic shunt such that the end portions and the central portions of the magnetic shunt face each other with different polarities.

Specifically, the end portion and the central portion of the magnetic shunt may be spaced apart from each other by a predetermined distance so as to form a magnetic field for increasing the rotational motion of the electrons.

Specifically, the magnetic field formed between the end portion and the center portion of the magnetic shunt maintains an angle with the inner surface of the electrode.

Specifically, the magnetic field generator may be characterized in that the magnets are arranged inside the magnetic shunt such that mutually facing shunt ends of the magnetic shunt face each other with different polarities.

Specifically, the magnetic field generator may be characterized in that magnetic shunt end portions facing each other are spaced apart from each other such that a magnetic field for increasing the rotational motion of electrons is formed between mutually facing magnetic shunt end portions.

Specifically, the apparatus may further include a contaminant inflow preventing portion disposed at a central portion of the magnetic field generating portion and formed in the form of a plate having a predetermined height.

Specifically, the contaminant inflow preventing portion may be spaced apart from the electrodes by a predetermined distance so that the electrodes can be prevented from being sputtered by positive ions, and the distance therebetween is 15 mm to 40 mm.

Specifically, the pair of electrodes may be characterized in that the upper portion is widened on both sides to perform a deposition operation in a radial form.

Specifically, the precursor supply unit may be located between the pair of magnetic field generating units, and may be positioned below the chamber.

Specifically, the gas supply unit may include a plurality of gas supply units disposed on both sides of the chamber, and may be located at a middle height of the chamber.

As described above, according to the present invention, a plasma zone is maintained at a certain angle with the surface of an electrode using a magnetic field generator, and plasma ions are concentrated at a position where an actual deposition reaction occurs, thereby increasing plasma density and increasing deposition efficiency It is effective.

Further, the contaminant inflow / retention device is installed at a position spaced apart from the electrode by a certain distance, so that the precursor is prevented from being attracted to the electrode, thereby preventing contamination of the electrode and preventing the deposition efficiency from being lowered.

Accordingly, since the deposition efficiency of the present invention is higher than that of the conventional device, the amount of the precursor and the reactive gas used can be reduced, and the apparatus can be operated more efficiently.

1 is a conceptual diagram of a plasma enhanced chemical vapor deposition apparatus according to an embodiment of the present invention.
2 is a view showing a magnetic field generated in the plasma CVD apparatus shown in FIG.
FIG. 3 is a view showing a plasma zone formed in the plasma chemical vapor deposition apparatus shown in FIG. 1. FIG.
FIG. 4 is a view showing a flow of a reaction gas and a precursor in the plasma enhanced chemical vapor deposition apparatus shown in FIG. 1. FIG.
5 is a view showing flows of positive ions and electrons in the plasma enhanced chemical vapor deposition apparatus shown in FIG.
FIG. 6 is a conceptual view illustrating a flow of a reaction gas and a precursor in another embodiment of the plasma enhanced chemical vapor deposition apparatus shown in FIG. 1; FIG.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the drawings, the same components are denoted by the same reference symbols whenever possible. In the following description, well-known functions or constructions are not described in detail since they would obscure the invention in unnecessary detail.

1 is a conceptual diagram of a plasma chemical vapor deposition apparatus according to an embodiment of the present invention. The plasma chemical vapor deposition apparatus 100 includes an electrode unit 110, A pair of magnetic field generating units 120 surrounded by the electrodes 111 and 113 and disposed in a center direction of the chamber 10 and a pair of electrodes 111 and 113, And a precursor supply unit 140 for supplying a precursor between the gas supply unit 130 and the pair of electrodes 111 and 113.

The electrode unit 110 has an elliptical shape and includes a first electrode 111 and a second electrode 113 forming a closed loop. The electrode unit 110 is disposed on both sides of the inside of the chamber 10, facing each other, And includes a cooling water passage 117 for preventing the generation of heat.

An insulator 115 for protecting the electrode of the electrode unit 110 is mounted between the magnetic field generating unit 120 and the electrode unit 110 to be described below.

1, the first electrode 111 is shown on the upper left side in the chamber 10 and the second electrode 113 is shown on the upper right and lower sides in the chamber 10 Respectively.

The electrode unit 110 receives various power sources such as alternating current, direct current, microwave, and electron beam from the power source unit 160 to convert the gas inside the chamber 10 into a plasma state.

For example, the inside of the chamber 10 is evacuated to a high vacuum of about 10 ^-3 torr, and the process gas is introduced. When AC power is applied to the electrodes of the electrode unit 110, the positive and negative electrodes alternate between the first electrode 111 and the second electrode 113, and the reactive gas is separated into positive ions and primary electrons to be in a plasma state . Here, the reaction gas in a plasma state is generated by alternating the positive and negative electrodes in the first and second electrodes 111 and 113 by the alternating current power applied to the first and second electrodes 111 and 113, (See Fig. 5).

The magnetic field generating unit 120 includes the magnet 121 and the magnetic shunt 123 which are surrounded by the electrode unit 110 and are opened in the center of the chamber 10.

1, the magnetic field generator 120 completely surrounds the entire left surface of the first electrode 111 forming the ellipse and the upper and lower portions of the first electrode 111, and the right surface of the first electrode 111 The center portion of the right side surface is opened so that only the portion contacting the first electrode 111 is covered. The magnetic field generating unit 120 surrounds the second electrode 113 in the same manner as in the second electrode 113 but in different directions.

The external shape of the magnetic field generating unit 120 is composed of the magnetic shunt 123 and a plurality of magnets 121 are embedded in the magnetic shunt 123.

The magnetic shunt 123 refers to a magnetic shunt and refers to a magnetic body made for branching or branching to the main magnet. The magnetic body of the magnetic shunt 123 serves to sidestep a suitable amount of magnetic flux.

In other words, the magnetic poles formed on any part of the magnetic shunt 123 have the same polarity as that of the magnet 121, because the magnetic flux is transmitted from the nearest magnet 121.

As shown in FIG. 1, a plurality of magnets 121 are disposed on the upper and lower portions of the magnetic shunt 123 surrounding the first electrode 111 and on the upper and lower surfaces of the right side of the first electrode 111, respectively. . The magnet 121 disposed adjacent to the adjacent shunt 123 from the right side of the shunt 123 to the upper side of the magnetic shunt 123 has mutually different polarities, that is, SN and SN. The magnets 121 are arranged in the lower part of the magnetic shunt 123 in a similar manner. The N pole is formed on both sides of the contaminant inflow preventing portion 150 in the center portion 124 of the left side surface of the magnetic shunt 123 by arranging the magnets 121 in this way.

A plurality of magnets 121 are disposed on the upper and lower portions of the magnetic shunt 123 surrounding the second electrode 113 and on the upper and lower surfaces of the left and right sides of the second electrode 113, The magnet 121 is disposed at a portion extending from the left side surface to the upper portion of the magnetic shunt 123, such that NS and NS are adjacent to each other and have mutually different polarities. The magnets 121 are disposed in the lower portion of the magnetic shunt 123 in the same manner. By disposing the magnets 121 as described above, an S pole is formed at the center portion 124 of the right side surface of the magnetic shunt 123.

The end portions 125 of the magnetic shunt 123, that is, the upper and lower portions of the right side surface of the first electrode 111 and the end portions of the magnetic shunt 123 positioned above and below the left side surface of the second electrode 113, And the edges of the ends are pointed to both sides.

Since the magnets 121 are disposed in the magnetic shunt 123 surrounding the first and second electrodes 111 and 112 as described above, the edges of the ends 125 of the pair of magnetic field generating portions 120 are different from each other Polarity, and a magnetic field is formed therebetween (see FIG. 2).

At this time, the magnetic field formed between the pair of magnetic field generators 120 is in the form of a donut as a whole, and the magnetic field is divided into upper and lower portions as viewed from the cross section.

In addition, the polarities of the magnetic field generating unit 120 are opposite to each other between the center 124 of the magnetic field generating unit 120 and another edge of the terminal 125. For example, the magnet 121 and the magnet 121 And the center portion 124 on the left side of the magnetic shunt 123 becomes the S pole on the end portion 125 of the magnetic shunt 123 surrounding the first electrode 111 by the magnetic shunt 123 that branches the magnetic flux from the magnetic pole The N pole is formed, and a magnetic field is formed between the upper and lower sides thereof (see FIG. 2).

Similarly, an N-pole (not shown) on the terminating end 125 of the magnetic shunt 123 surrounding the second electrode 113 by the magnet 121 disposed therein and the magnetic shunt 123 for diverting the magnetic flux from the magnet 121 And the right center portion 124 of the magnetic shunt 123 becomes the S pole, and a magnetic field is formed between the upper and lower portions thereof (see FIG. 2).

At this time, the magnetic field formed between the end portion 125 and the center portion 124 of one magnetic field generating portion 120 is in the form of a donut as a whole and the cross section of the magnetic field is obliquely seen, .

The gas supply unit 130 is disposed between the first and second elliptical electrode units 111 and 113 to supply the reaction gas to the chamber 10 and a plurality of gas supply units 130 are provided on both sides of the chamber 10 Not shown).

 In the plasma chemical vapor deposition method, the reaction gas is ejected from the gas supply unit 130, passes between the first and second electrode units 111 and 113 arranged in a pair, and finally becomes a plasma state by a high frequency generated by a strong voltage.

The gas supply unit 130 is formed at a position spaced from the precursor supply unit 140 disposed at a lower portion of the chamber 10 by a predetermined distance.

The precursor supply unit 140 for supplying the precursor into the chamber 10 is disposed at a lower portion of the space inside the chamber 10 and the jet port extends to the center of the chamber 10 to form the first and second electrode units 111 and 113 .

A precursor is a substance before a specific substance is metabolized or reacted, or a substance that is not a substance that can be finally obtained. In chemical vapor deposition, a substance before a thin film is formed on a coating material such as a substrate Quot;

The precursor is also ionized by the high frequency of the electrode unit 110 to be in a plasma state. And then bonded to a part of the reactive gas in a plasma state through a physical or chemical reaction to be deposited on the coating material such as a substrate.

That is, the precursor is ejected from the precursor supply unit 140 located at the lower portion of the chamber 10, and is ionized while passing between the first and second electrodes 111 and 113 to be in a plasma state. At this time, And reacts with a part of the reaction gas to deposit a coating material such as a substrate in a reaction zone 180 located at the center of the chamber 10.

The precursor supply unit 140 is positioned below the chamber 10 to raise the precursor to the upper portion of the chamber 10 together with the reaction gas so that the precursor or the reaction gas is supplied to the electrode unit 110 located on both sides of the chamber 10 (See Fig. 4).

The plasma chemical vapor deposition apparatus 100 of the present invention may further include a contaminant inflow preventing unit 150 disposed in the center of each of the pair of magnetic field generating units 120 in a plate shape having a predetermined height.

The contaminant inflow preventing portion 150 is located at the center portion 124 of the magnetic shunt 123 located on the left and right sides of the chamber 10 and extends or extends longer than the length of the first and second electrodes 111 and 113 . That is, referring to FIG. 1, it can be seen that the contaminant inflow preventing portion 150 is formed to extend slightly longer than the positions of the first and second electrodes 111 and 113.

In the present invention, each plasma zone 170 having a high plasma density is made to coincide with the reaction zone 180 in which chemical vapor deposition occurs, thereby increasing the deposition efficiency. In this way, the plasma zone 170 and the reaction zone 180 are formed, The deposition efficiency is increased, but the electrode 110 around the reaction zone 180 is contaminated (see FIGS. 3 and 4).

Therefore, when an unwanted coating is formed on each electrode of the electrode unit 110, the generation of plasma of the precursor and the reaction gas is lowered.

To prevent this, a structure is required to prevent the precursor from approaching the direction in which the electrode unit 110 is positioned. At the same time, it is necessary to maximize the flow of the reaction gas requiring reaction with the precursor to prevent the backflow phenomenon of the precursor.

The contaminant inflow preventing portion 150 is formed to extend from the electrode portion 1110 by about 15 mm to 40 mm so as to extend from the center portion 124 of the magnetic shunt 123 toward the center of the chamber.

Specifically, the distance that the contaminant inflow preventing portion 150 is spaced apart from the electrode portion 110 is a phenomenon in which the positive ions in the plasma state are not sputtered on the electrode, It is a distance that can be eliminated.

In other words, the precursor ejected from the precursor supply unit 140 located at the lower portion of the chamber 10 is disturbed by the contaminant inflow preventing unit 150, and the precursor whose movement speed is slowed by the interruption is interrupted by the electrode unit 110 can easily dissociate into positive ions and electrons and at the same time, even when starting to move from the contaminant inflow preventing portion 150 to the electrode portion 110, when reaching the electrode portion 110, sufficient acceleration energy required for sputtering .

The plasma chemical vapor deposition apparatus 100 of the present invention may include a power source unit 160 connected from the outside of the chamber 10 to the electrode unit 110.

The power supply unit 160 is located outside the chamber 10 and supplies power to the electrode unit 110 to supply an energy source for converting the gas inside the chamber 10 into a plasma state. The power supply unit 160 applies DC, AC, microwave, or electron beam to the electrode unit 110 in order to convert the gas into a plasma state.

According to an embodiment of the present invention, a frequency of 20 to 100 kHz is used depending on the magnitude of the capacitance, which is relatively easy to operate and low in operation cost, and is connected to the power supply unit 160 and is located on both sides of the chamber 10 An AC power is applied to the pair of electrode units 110, that is, the first and second electrodes 111 and 113 to form an electric field between the pair of electrode units 110 to generate a very high frequency.

At this time, the reaction gas and the precursor are separated into the plasma state by receiving such energy, and the positive ions and electrons of the separated gas alternately reciprocate between the first and second electrodes 111 and 113, Thereby reducing the plasma density and increasing the density of the plasma. That is, by applying AC power to the electrode unit 110 by the power supply unit 160, the density of the plasma inside the chamber 10 can be further increased, and the deposition efficiency of the thin film can be increased accordingly (see FIG. 5).

The plasma chemical vapor deposition apparatus 100 of the present invention may include a chamber 10 for causing chemical vapor deposition to occur therein.

The chemical vapor deposition method is a method of depositing a solid product produced by a chemical reaction on a substrate by injecting chemical vapor deposition reaction gases into a high vacuum state in the chamber 10 by using a vacuum pump, In the deposition method, plasma generation and deposition occur simultaneously in the chamber 10.

The vacuum pump serves not only to make the interior of the chamber 10 in a vacuum state, but also to discharge the reaction gases and precursors remaining after the reaction in the chamber 10 through the exhaust port to the outside.

In the plasma chemical vapor deposition apparatus 100 according to the present invention, the position of the magnetic field can be matched with the reaction zone 180 to maximize the density of the plasma during the deposition process. Even if the degree of vacuum in the existing chemical vapor deposition apparatus is kept low A sufficient deposition efficiency can be achieved.

FIG. 3 is a view showing that a plasma zone 170 is formed by applying power to a plasma chemical vapor deposition apparatus configured as described above, and FIG. 4 is a view showing a flow of a precursor and a reactive gas.

The magnetic field generated by the electrode unit 110 in the chamber 10 applies a force perpendicular to the magnetic field to the separated electrons in the reaction gas in the plasma state according to the Fleming's left-hand rule, So that a rotational motion is performed.

As the electrons rotate, the separation of the reaction gas into electrons and cations accelerates, resulting in a higher plasma density in the magnetic field region.

That is, the plasma zone 170 is formed along the above-described magnetic field region. The first plasma zone 171 is formed between the upper and lower ends 125 of the magnetic shunt 123 surrounding the first and second electrodes 111 and 113 The first and second electrode surfaces 112 and 114 of the electrode unit 110 are formed at a predetermined angle (indicated by 'A' in FIG. 1) along the magnetic field formed between the central portion 124 of the magnetic shunt 123, ) Of 0 ~ 45 degrees and formed into a donut shape.

The second plasma zone 173 is formed in a donut shape along the magnetic field formed between the ends of the pair of magnetic field generators 120 so that the second plasma zone 173 appears parallel to the upper and lower sides in cross section.

The first plasma zone 171 is formed at a predetermined angle (A degree) with respect to the electrode faces and the second plasma zone 173 is formed vertically and parallel to the center of the chamber 10, 10) around the reaction zone (180).

When the plasma zone 170 is formed on the side surface of the electrode unit 110 at an angle of 0 degrees with respect to the electrode unit 110, the plasma is located farther to the reaction zone 180. In the first plasma zone 171 Is maintained at 0 to 45 degrees with respect to the first electrode surface 112 at a certain angle (A degree), electrons and positive ions move at 90 degrees, which is a predetermined angle with respect to the first electrode 111 and the second electrode 113, .

On the contrary, in the case of the conventional plasma chemical vapor deposition apparatus, the plasma is generated in front of the electrode, and the interval between the actual chemical vapor deposition and the plasma zone is about 50 to 100 mm, so that the density of the ions contributing to the deposition is relatively However, in the present invention, by bringing the first and second plasma zones 171 and 173 and the reaction zone 180 as close to each other as possible, the chemical reaction for deposition in the coating material can be enhanced to increase the deposition efficiency.

In other words, in the present invention, the region where the precursors dissociated into electrons and cations and increased in reactivity, that is, the plasma region with a high density, substantially coincides with the reaction zone 180, so that the bonding of the precursor and the reaction gas in the coating is maximized It is possible to manufacture a high-quality thin film by a high deposition rate even under a low electric field energy.

FIG. 6 shows another embodiment of the present invention in which the upper portion of the first and second electrodes 111 and 113 located at the upper portion of the chamber 10 is opened in the plasma CVD apparatus 100 shown in FIG. 1 It is a conceptual diagram showing the flow of the reaction gas and the precursor together.

In order to allow the flow of the precursor and the reactive gas to radially spread when a radial coating shape is required depending on the shape of the coating object, the distance between the first and second electrodes 111 and 113 It is spaced apart.

As described above, in the plasma CVD apparatus 100, the magnetic field generating unit 120 is wrapped around the electrode unit 110 and appropriately disposed at the back thereof to form a magnetic field surrounding the reaction zone 180, And the plasma zone 170 in which the actual deposition reaction occurs can be maximally matched with the deposition zone 170 of the plasma CVD apparatus 100, thereby improving the deposition efficiency of the plasma CVD apparatus 100.

In addition, the magnetic field surrounding the reaction zone 180 increases the ionization rate of the reactive gas by making the plasma infinitely rotational and hopping in the plasma state, thereby increasing the plasma density and improving the deposition efficiency of the plasma chemical vapor deposition apparatus 100 There is an effect that can be increased.

Further, the gas in the plasma state is evenly distributed around the coating material by the magnetic field surrounding the reaction zone 180, so that the density of the plasma can be uniformly maintained to uniformly form the thin film. That is, the thin film to be deposited on the coating material having a high deposition efficiency is made more uniform, thereby improving the quality of the product.

In addition, since the contaminant inflow preventing portion 150 is formed at a position spaced apart from the electrode of the electrode portion 11 by a predetermined distance, the electrodes of the electrode portion 110 are prevented from being contaminated due to the plasma density increased during the deposition process, It is possible to prevent the evaporation efficiency of the evaporation source 100 from being lowered.

In addition, since the plasma CVD apparatus 100 according to the present invention has a higher deposition efficiency than the conventional chemical vapor deposition apparatus, the chamber 10 can be processed at a low degree of vacuum, unlike the conventional chemical vapor deposition apparatus. So that the burden of the vacuum pump can be reduced.

In addition, by increasing the plasma density as described above, it is possible to have a higher deposition efficiency even under the same conditions as the conventional plasma vapor deposition apparatus, thereby saving the amount of the precursor and the reactive gas necessary for the chemical vapor deposition process, There is an effect that the device can be operated efficiently.

The chemical vapor deposition apparatus of the present invention as described above is not limited to the configuration and the operation method of the embodiments described above. The embodiments may be configured so that all or some of the embodiments may be selectively combined so that various modifications may be made.

10: chamber
110: electrode part 111: first electrode
112: first electrode surface 113: second electrode
114: second electrode surface 115: electrode insulator
117: cooling water passage 120: magnetic field generating portion
121: Magnet 123: Magnetic shunt
130: gas supply unit 140: precursor supply unit
150: contaminant inflow prevention part 160: power source part
170: plasma zone 171: first plasma zone
172: second plasma zone 180: reaction zone

Claims (15)

A plasma chemical vapor deposition apparatus for depositing a film on a surface of a coating material in a vacuum chamber,
An electrode unit having a pair of electrodes spaced apart from each other;
A pair of magnetic field generators enclosing the electrodes and opened to the center of the chamber;
A gas supply unit for supplying a reaction gas between the pair of electrodes; And
And a precursor supply unit for supplying a precursor between the pair of electrodes, wherein a magnetic field is formed between the pair of magnetic field generating units, and a magnetic field is formed in the inner space surrounded by the magnetic field generating unit. Chemical vapor deposition apparatus.
The method according to claim 1,
Wherein the electrode is formed in an elliptical shape and includes a cooling water channel in the inside thereof.
The method according to claim 1,
Wherein the magnetic field generating unit is made of an magnetic shunt, and a plurality of magnets are disposed in the magnetic shunt.
The method of claim 3,
Wherein the plurality of magnets are arranged such that adjoining magnets are connected to each other in polarity different from each other,
The method of claim 3,
Wherein the magnetic shunt is formed such that the terminal end is flat and the edge of the terminal end is pointed in both directions.
The method of claim 3,
Wherein the magnetic field generating unit is arranged such that a magnet is disposed inside the magnetic shunt such that a longitudinal end portion and a central portion of the magnetic shunt face each other with different polarities.
The method of claim 6,
Wherein the magnetic shunt is spaced apart from each other by a predetermined distance so that a magnetic field for increasing the rotational motion of electrons is formed between the end portion and the center portion of the magnetic shunt.
The method of claim 6,
Wherein the magnetic field formed between the end portion and the center portion of the magnetic shunt maintains a certain angle with the inner surface of the electrode.
The method of claim 3,
Wherein the magnetic field generating unit is arranged such that the magnets are disposed inside the magnetic shunt so that mutually facing shunt end portions face each other with different polarities.
The method of claim 9,
Wherein the magnetic field generating unit is spaced apart from each other by mutually facing mutually shunt terminations so that a magnetic field for increasing the rotational motion of the electrons is formed between the mutually shunt terminations facing each other.
The method according to claim 1,
And a contaminant inflow preventing portion disposed at a central portion of the magnetic field generating portion and formed in a plate shape having a predetermined height.
The method of claim 11,
Wherein the contaminant inflow preventing portion is spaced apart from the electrodes by a predetermined distance so as to prevent the electrodes from being sputtered by positive ions, and the gap is 15 mm to 40 mm.
The method according to claim 1,
Wherein the pair of electrodes are open on both sides in order to perform a deposition operation in a radial form.
The method according to claim 1,
Wherein the precursor supply unit is located between the pair of magnetic field generating units and is located below the chamber.
The method according to claim 1,
Wherein the gas supply unit is located at a middle height of the chamber, wherein a plurality of gas supply units are disposed on both sides of the chamber.

Images