TW201344744A - Plasma-generating source comprising a belt-type magnet, and thin-film deposition system using same - Google Patents

Abstract

The present invention relates to a plasma-generating source which generates uniform and high-density plasma at a high vacuum level, and to a use thereof. The object of the present invention is to obtain a high-quality thin film by using the plasma-generating source in a thin-film deposition system which comprises: a device for sputtering a similar plasma-generating source, a neutral particle-beam generating source, or a combination of the device for sputtering and the neutral particle-beam generating source. According to the present invention, a magnetic field formed by at least one pair of belt-type magnets, and microwaves generated by a microwave-radiation device, are used to generate plasma, and a continuous structure of the belt-type magnets is used to induce a return path for electrons so as to maximize a plasma-confinement effect, thereby achieving the above object.

Description

Plasma generating source including strip magnet and thin film deposition system using the same

The present invention relates to a plasma generating source and an application thereof, and more particularly to a plasma generating source for generating a high-density plasma by arranging permanent magnets, and using the same to realize a high-efficiency, large-area sputtering apparatus and generating high-flux Neutral particle beam generation source for neutral particle beam and thin film deposition system for combined sputtering device and high flux neutral particle beam generation source.

Plasma has a variety of applications, particularly as an important technical element in the art of forming thin films. In the field of advanced materials such as semiconductors, OLEDs, solar cells, LEDs, and diamond films, high-quality thin film deposition is required, and a large-area, high-density plasma capable of meeting such demands is a particularly important technology.

When forming a flexible electronic component suitable for a recent application frequency increase, that is, a flexible display, a flexible illumination, a flexible solar cell, a flexible secondary battery, or the like, it is required to be able to be used in a large area. A sputtering technique that minimizes plasma damage caused by high energy particles and plasma electrons generated by plasma. Moreover, there is a need for a low temperature technology capable of depositing a high quality film at a low temperature to enable the use of a flexible plastic substrate.

The conventional magnetron sputtering technique is a technique in which a high voltage of -500 V or more is applied to a target while solving plasma generation and ion acceleration of plasma generation and ion acceleration. In such a conventional technique in which the plasma generation power and the ion acceleration voltage of the magnetron sputtering are unified, it is necessary to apply a high voltage to the target, so that generation of high energy particles cannot be avoided. If the target applied voltage is reduced in order to minimize the generation of high-energy particles, the plasma is unstable or the plasma density is remarkably lowered, and a problem that the deposition rate is remarkably lowered occurs.

In order to solve such a problem, it is necessary to separate the plasma to generate electric power and ion acceleration voltage and separately control the techniques. If it is possible to separate the plasma generating electric power and the ion accelerating voltage, it is desirable to achieve a high-density plasma in the vicinity of the target irrespective of the applied voltage level of the target, which is expected to be achieved, but a large-area, high-density plasma that satisfies this purpose. The development of technology for body production sources is not easy.

In addition, in order to deposit a high-quality film at a low temperature, an atomic scale heating technique capable of simultaneously heating an atomic layer on the surface of the film during deposition of the film is required instead of the conventional substrate heating. The neutral particle beam is capable of performing atomic-level heating, and thus is advantageous for depositing a high-quality film at a low temperature, but in order to exert an atomic-level heating effect, the neutral particle beam needs to generate a high-flux neutral particle beam. In the conventional neutral particle beam generating source, the plasma limiter is disposed between the neutralization reflector and the substrate, and thus has a problem of acting as an obstacle when the neutral particle beam reaches the substrate.

In order to solve the problem of the conventional neutral particle beam generating source, it is necessary to minimize the interaction between the plasma and the substrate without a plasma limiter and to generate a high-flux neutral particle beam capable of generating high density. Plasma technology, but technology development is not easy.

Accordingly, in order to deposit a film required for the manufacture of a flexible electronic component (ie, a flexible display, a flexible illumination, a flexible solar cell, a flexible secondary battery, etc.), a new splash is required. A high-throughput neutral beam generation source with a firing device and no plasma limiter. Such a device can be easily implemented as long as a large-area, high-density plasma generating source suitable for the purpose of a new film is developed. Therefore, the development of large-area, high-density plasma generation sources is a core technology, but it has not yet reached a satisfactory level.

Further, in the prior art, in order to obtain a high-density plasma under a high vacuum, a permanent magnet or an electromagnet is used to form a magnetic field, and a microwave is irradiated to generate an Electron Cyclotron Resonance (ECR) plasma. However, in the prior art, there is a problem in the high-density plasma generated in the confinement electron cyclotron resonance region due to the structure of the magnetic field. For example, when a plurality of permanent magnets are arranged at a predetermined interval to form a cups field, the plasma generated in the electron cyclotron resonance region formed in the cup field is subjected to drift motion due to a curved magnetic field and an electric field ( For example, ExB drift (E-cross-Bdrift), gradient B drift, curvature drift, etc., the trajectory of the drift motion forms a straight divergence trajectory (calculation curve), according to which the plasma In particular, electrons leak from both ends of the magnet, causing problems in the constraints of the plasma. Moreover, in another example of the prior art, since the cup field is formed, the arrangement of the magnets is adjusted in order to solve the plasma constraint problem, but the plasma drift motion forms a discontinuous trajectory due to the discontinuous magnetic field distribution, There is a problem that the plasma confinement effect is lowered.

Further, in the prior art, a microwave is applied between the microwave irradiation device and the plasma while maintaining a vacuum using a dielectric window. However, when such a plasma generating source performs a deposition technique, the deposited material will plate the dielectric window, thereby significantly reducing the transmittance of the microwave and reducing the plasma density, and thus there is a problem of reliability of the weakening technique.

technical problem

Accordingly, it is an object of the present invention to provide a plasma generating source capable of generating a large-area, high-density plasma by a magnet structure capable of maximizing a plasma sealing effect and a design based on the linkage of the magnetic field and the microwave. body.

Moreover, another object of the present invention is to provide a plasma generating source including a microwave irradiation device capable of solving the problem of plating of a dielectric window in a deposition technique using plasma.

Moreover, it is still another object of the present invention to provide a thin film deposition system using a sputtering device and a neutral particle beam generating source of the plasma generating source, and a combined sputtering device and a neutral particle beam generating source.

Technical solutions

The present invention provides a plasma generating source comprising: a plasma chamber forming a plasma generating space; a pair of ribbon magnets arranged to surround the outer wall of the plasma chamber; and a microwave irradiation device for generating the plasma The space illuminates the microwave, the plasma chamber being constituted by one of a cylindrical, polygonal or polygonal bottom surface of the bottom surface having an elliptical trajectory, the strip magnet having a continuous magnet arrangement, and the microwave irradiation device adjusting the illumination The microwave is irradiated in a direction such that the electric field of the microwave is perpendicular to the direction of the magnetic field formed by the pair of strip magnets in the plasma generating space, thereby increasing the plasma density in accordance with the magnetic field distribution.

Moreover, the present invention provides a plasma generating source in which the plasma chamber and the microwave irradiation device are communicated by an opening portion that illuminates the microwave, and the plasma chamber and the microwave irradiation device can be vacuumed together.

Moreover, the present invention provides a plasma generating source, wherein the microwave irradiation device comprises a rectangular waveguide, a cylindrical waveguide, an annular waveguide, a circular waveguide, or a slit is formed on the waveguides A slit-shaped waveguide that irradiates microwaves in a pulse mode or a continuous mode.

Moreover, the present invention provides a sputtering apparatus in which one or more targets are disposed in a plasma chamber of the plasma generating source, and a bias voltage is applied to the target to excite sputtering, the target being along the plasma chamber One or more of the inner side walls are attached to be surrounded by a magnetic field formed by the strip magnet in the plasma generating space, and one or more of the plasma chambers are disposed on the upper surface of the plasma chamber in a direction parallel to the upper surface of the plasma chamber. The target is capable of simultaneously depositing more than one substance onto the substrate.

Moreover, the present invention provides a sputtering apparatus in which a bias voltage applied to the target is a direct current voltage, an alternating current voltage, a pulse, or a voltage formed by a direct current voltage, an alternating current voltage, or a pulse mixture.

Moreover, the present invention provides a neutral particle beam generating source in which one or more neutralization reflecting plates composed of a highly conductive substance are provided in a plasma chamber of the plasma generating source, and reflected toward the neutralization The plate applies a bias voltage to generate a neutral particle beam, and the neutralizing reflector is attached to one or more of the inner side walls of the plasma chamber to be surrounded by a magnetic field formed by the strip magnet in the plasma generating space. The upper surface of the plasma chamber is further provided with more than one target arranged in a direction juxtaposed in the upper direction of the plasma chamber, thereby generating a beam of neutral particles.

Moreover, the present invention provides a neutral particle beam generating source comprising: a plasma chamber providing a plasma discharge space for generating plasma; and a neutralizing reflector disposed inside the plasma chamber for plasma by collision Transforming ions into neutral particles; a limiter disposed at a lower end of the plasma discharge space for confining plasma ions and electrons other than neutral particles to the plasma discharge space; a microwave irradiation device, Installed in the plasma chamber to emit microwaves into the plasma chamber; a pair of strip magnets surrounding the periphery of the plasma chamber, each strip magnet of the pair of strip magnets exhibiting complementary inner and outer sides of the strip The polarity of the magnetic force, the magnetic polarity of the two strip magnets arranged side by side around the plasma chamber are also complementary in the upper and lower positions.

Moreover, the present invention provides a thin film deposition system in which one or more of the sputtering apparatuses are provided and one or more of the neutral particle beam generating sources are combined.

Moreover, the present invention provides a thin film deposition system in which a bias voltage applied to the target or the neutralization reflector is a direct current voltage, an alternating current voltage, a pulse, or a voltage formed by a direct current voltage, an alternating current voltage, and a pulse mixture. .

Moreover, the present invention provides a thin film deposition system in which the neutralization reflection plate is composed of one of metal, silicone or graphite.

Beneficial effect

According to the present invention, the plasma generating source can uniformly distribute the high-density plasma to the cavity at a low operating pressure, that is, under a high vacuum, by the interaction of the magnetic field formed by the strip magnet in the plasma chamber and the electric field of the microwave. Large area within the space.

Moreover, according to the present invention, the strip magnet can be distributed over a large area without requiring a special magnet structure to be driven by scanning or the like, so that substances can be uniformly deposited on the large-area substrate.

Moreover, the present invention constitutes a plasma chamber from a non-magnetic metal material such as stainless steel, and does not use an O-ring for vacuum sealing, so that a high vacuum can be formed in the chamber as compared with a plasma chamber formed by using quartz or glass. The average free path of the resulting neutral particle beam can be greatly improved.

Moreover, according to the present invention, a sputtering apparatus using the plasma generation source independently adjusts by separating plasma generating electric power and ion acceleration voltage, thereby minimizing damage of a film caused by high energy particles, thereby being capable of depositing high quality. film. Moreover, by generating a high-density plasma in the vicinity of the target at a low operating pressure, the sputtering efficiency and the straightness of the sputtered particles can be improved. Further, various types of technologies such as co-deposition can be realized by freely selecting the type and number of targets.

Moreover, according to the present invention, a neutral particle beam generating source for neutralizing a reflecting plate in the sputtering apparatus can supply a large-volume neutral particle beam over a large area, especially in the absence of a plasma limiter. It is also capable of minimizing plasma-substrate interaction.

Moreover, according to the present invention, a film capable of forming a high-quality film can be realized by combining one or more of the sputtering apparatus and the neutral particle beam generating source while supplying the energy required for deposition of the thin film deposition element substance and the thin film. Deposition system.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

The configuration of the plasma generating source of the present invention is shown in Fig. 1a.

A pair of strip magnets 400 are mounted on the side wall of the plasma chamber 100 providing the plasma generating space, and a microwave irradiation device 200 (also referred to as a launcher) is attached to the upper end of the plasma chamber 100, and the microwave is The illumination device 200 releases microwaves into the plasma chamber 100.

In particular, in the present invention, the position at which the microwave is incident from the microwave irradiation device 200 into the plasma chamber 100 is formed as a complete opening portion instead of providing a dielectric window, thereby solving the deposition during the deposition process. The problem of polluting the window and causing a decrease in microwave transmittance.

Figs. 1b and 1c are plan views of a pair of strip magnets 400 provided on the outer wall of the plasma generation source. In other words, the magnetic field of the shape of FIG. 1a can be formed by arranging the strip magnets of the A type (Fig. 1b) and the strip magnets of the B type (Fig. 1c) vertically. Such a strip magnet may be arranged in a plurality of pairs instead of only one pair, whereby the curves as in Fig. 1a are successively arranged in the plasma generating space. Obviously, the strip magnets shown in Figures 1b and 1c can be constructed as circular or elliptical tracks, or as arbitrary closed polygons. The magnetic field is continuous without interruption, which results from the continuous configuration of the strip magnet 400 itself, which is derived from the incidence of microwaves through the upper end opening rather than through the sidewalls of the plasma chamber 100. The continuously formed magnetic field captures the electrons of the generated plasma, causing a toroidal trajectory along the sidewall of the plasma chamber to continuously perform drift motion, thereby significantly improving the plasma confinement effect. . That is, when the movement of electrons is observed on average, as shown in the cutaway perspective view of Fig. 1d, a continuous regression trajectory is exhibited, and the plasma confinement effect can be remarkably improved.

The plasma chamber 100 may be cylindrical, cylindrical with a bottom surface having an elliptical trajectory or a polygonal prism having a polygonal bottom surface, and the strip magnet 400 has a circular shape, an elliptical trajectory, a quadrangle, and the like according to the structure of the plasma chamber 100. Various other shapes are mounted to the sidewalls of the plasma chamber 100 and form an Electron Cyclotron Resonance (ECR) magnetic field within the plasma chamber 100. Here, the electron cyclotron resonance magnetic field Bres is as follows.

f: microwave frequency, e: electronic charge, me: electronic quality

Moreover, the microwave frequency irradiated by the microwave irradiation device 200 uses a frequency greater than the plasma ion frequency. Here, the plasma ion frequency Ωi is as follows.

Ni: ion density, Z: atomic number, e: electron charge, mi: ion quality

In the plasma generation source as described above, the electron cyclotron resonance plasma is formed based on the magnetic field of the pair of the strip magnets 400 that surround the outer wall and the electric field of the microwaves that are irradiated by the microwave irradiation device 200, thereby increasing the plasma. The bulk density, and can produce such a high density plasma over a large area. Further, a high-density plasma can be generated under a low-pressure high vacuum of 1 mTorr or less, whereby the average free path of the particles is increased, thereby facilitating application.

Further, the microwave irradiation mode of the microwave irradiation device 200 that generates the plasma can be adjusted to a pulse mode or a continuous mode as needed to broaden the applicability.

detailed description

Hereinafter, a modified embodiment of the plasma generating source according to Figs. 1a to 1d and a sputtering apparatus, a neutral particle beam generating source, and a thin film deposition system based thereon will be described in detail.

When the microwave irradiation device 200 of Fig. 1a and Fig. 1d is viewed from above, a shape such as a circular shape, an elliptical shape, a circular or elliptical orbital shape or a quadrangular shape is exhibited. Fig. 2 shows a case where the slit 250 is formed on the microwave irradiation device 200, Fig. 3 shows a case where a slit is formed in the circular microwave irradiation device 200, and Fig. 4 shows a quadrangle or a cylinder. The microwave irradiation device 200 is shaped, and such a microwave irradiation device 200 can be provided in plurality to enhance the output.

Referring to Fig. 5, a sputtering apparatus 800 to which the plasma generating source is applied is shown. The sputtering apparatus 800 is characterized in that the frequency of the microwave is greater than the plasma ion frequency, so that the electrons can be heated without affecting the movement of the plasma ions, thereby generating a plasma, and the bias applied to the targets 700, 710, 720 The applied voltage is applied at a frequency lower than the plasma ion frequency to adjust the energy of the ions incident on the target, thereby separating the plasma generating power and the ion accelerating voltage. The sputtering apparatus 800 maintains a stable high-density plasma irrespective of the target bias voltage by binarizing the plasma generation power and the ion acceleration voltage, thereby distinguishing that the plasma becomes at a low target application voltage. An unstable conventional sputtering device. Moreover, since the target bias voltage of the conventional sputtering apparatus is high, high-energy particles are generated to damage the thin film, the sputtering apparatus 800 of the present embodiment can reduce the target bias voltage, and thus has the smallest The advantages of the above problems.

Since high-density plasma can be generated in a magnetic field in the vicinity of the targets 700 and 710 provided on the side wall of the plasma chamber, high-efficiency sputtering can be expected.

Moreover, since it is the magnetic field structure of the strip magnet 400, a very uniform high-density plasma distribution is formed in the vicinity of the target 720, whereby the etching distribution of the target 720 is uniform, and the use efficiency of the target 720 can be improved. Moreover, it is possible to constitute the large-area target 720, which is derived from the plasma distribution which can be formed at a high density over a large area.

In addition, the bias voltages of the targets 700, 710, and 720 of the sputtering apparatus 800 can be variously changed according to the purpose of the technology (DC voltage, AC voltage, DC pulse, AC pulse, or mixed DC voltage, AC voltage, DC pulse, The voltage formed by the alternating pulse, etc., according to which the characteristics of the film can be adjusted.

Moreover, the target 720 disposed side by side and the targets 700, 710 disposed on the side walls are respectively composed of different substances, thereby providing convenience in simultaneously evaporating the main substance and the dopant.

As a specific example, Zn is formed from one target 700, In ₂ O _{3 is} formed from the other target 710, and Ga ₂ O _{3 is} formed from the other target 720, so that IGZO can be formed on the substrate. In such an arrangement, there is an advantage that the deposition speed can be improved while minimizing damage of the film due to negative oxygen ions.

The targets 700, 710 disposed on the inner wall of the plasma chamber may be arranged in a radial arrangement of a plurality of short films, and the target 720 arranged in a horizontal plane in the plasma chamber may be attached to the plasma chamber or disposed at the central portion of the chamber, and it may also It is composed of a plurality of short films, and although the target can be composed of a plurality of different substances, in order to achieve high-speed, high-efficiency, uniform film deposition, the same substance can be adjusted.

According to this configuration, the target configuration (large-area target or the like) is relatively free, and the targets 700 and 710 provided on the inner wall of the plasma chamber are surrounded by the magnetic field generated by the strip-shaped magnet 400, whereby high-density plasma can be generated in the vicinity of the target. High efficiency sputtering can be achieved.

Further, when a plurality of targets 700, 710 are disposed on the inner wall of the plasma chamber, if the plasma chamber 100 is configured as a cylindrical or polygonal prism having a bottom surface of an elliptical trajectory, a plurality of targets are disposed so that the number of constituent elements of the thin film It is advantageous when the content is optimized, and there is an advantage that the effect of the magnetic field generated by the strip magnet 400 can be adjusted.

Moreover, the sputtering apparatus of the present embodiment generates a high-density plasma under high vacuum, whereby the straightness of the sputtered particles is improved, so that the aspect ratio can be improved when performing film deposition having a groove pattern. .

The sputtering apparatus of the present embodiment can independently adjust the plasma generating electric power and the ion accelerating voltage, and confine the plasma charged particles according to the magnetic field formed by the strip magnet 400, and can minimize the plasma even without a special plasma limiter. The body-substrate interaction, thereby minimizing film damage caused by plasma. However, it will be apparent to those skilled in the art that a plasma limiter can be added at the critical point of the chamber as needed.

Fig. 6 shows the configuration of a neutral particle beam generating source 900 that deforms the sputtering apparatus 800.

When the neutralization reflector 300 made of a highly conductive material is used in the sputtering apparatus 800 instead of the targets 700, 710, and 720, a neutral particle beam generation source 900 is formed. A low-bias voltage of -100 V or less is applied to a neutralization emitter plate made of a highly conductive material such as a metal such as tungsten, tantalum or graphite, whereby a neutral particle beam can be generated, and various modes of the bias voltage can be used. The configuration in the sputtering apparatus is similarly applied. The neutral particle beam generating source 900 according to the present embodiment generates a high-density plasma in the same principle as the above-described sputtering apparatus 800, whereby a high-flux neutral particle beam can be generated. The neutral particle beam generation source of the present embodiment can minimize the plasma-substrate interaction even without providing a plasma limiter, and thus is different from the conventional neutral particle beam generation source. Moreover, the advantages of the high flux of the neutral particle beam caused by the high-density plasma generated under high vacuum and the advantage of the increase in the average free path are also exhibited in the same manner. However, it is possible to add a plasma limiter at the critical point of the cavity as needed, as will be apparent to those of ordinary skill in the art.

FIG. 7 illustrates an embodiment of a thin film deposition system 1000 implemented by combining the sputtering apparatus 800 and a neutral particle generating source 900.

According to the thin film deposition system 1000, the particles constituting the thin film are supplied by the sputtering device 800 while additionally providing the energy required for forming the thin film by the neutral particle beam, thereby having the advantage of being able to form a high-quality thin film under low-temperature technology. .

In the seventh drawing, one (two) neutral particle beam generating sources 900 are respectively disposed on both sides centering on one sputtering apparatus 800 to constitute the thin film deposition system 1000, but a sputtering apparatus 800 may be combined. And a neutral particle beam generating source 900, it is obvious that the combined method can be variously changed by those skilled in the art.

Fig. 8 shows a configuration in which the restrictor 500 is further included in the configuration of the neutral particle generating source of the present invention. Although the plasma-substrate interaction can be minimized without the limiter 500, after the restrictor 500 is further disposed, when the neutral particle beam is emitted from the plasma chamber 100 to the technical chamber (not shown) having the substrate 600, Remove charged particles more thoroughly.

Further, the strip magnet 400 may be an electromagnet which is not a permanent magnet. In this case, the frequency of the microwave can be increased, whereby the plasma density can be increased.

The scope of the present invention is defined by the scope of the claims, and is not limited to the embodiments described above, and those skilled in the art can make various changes and modifications within the scope of the claims. This is obvious.

Industrial utilization possibility

The present invention can be widely applied to a technique of forming a thin film by plasma, and particularly in the field of advanced industries such as semiconductors, OLEDs, solar cells, LEDs, diamond films, and the like, the plasma generating source and the thin film deposition system of the present invention can be utilized.

100. . . Plasma chamber

200. . . Microwave irradiation device

250. . . Slit

300. . . Neutralizing reflector

400. . . Ribbon magnet

500. . . Limiter

600. . . Substrate

700, 710, 720. . . target

800. . . Sputtering device

900. . . Neutral particle beam generation source

1000. . . Thin film deposition system

Fig. 1a is a schematic cross-sectional view showing the configuration of a plasma generating source of the present invention.

Fig. 1b-1c is a plan view showing a magnet structure of a strip magnet which is a constituent element of the plasma generation source.
Fig. 1d is a cutaway perspective view of the plasma generating source of the present invention.

Fig. 2 is a cross-sectional view showing the configuration of a microwave irradiation device applied to the plasma generation source of Fig. 1a.
Fig. 3 is a cross-sectional view showing the configuration of a toroidal microwave irradiation apparatus applied to the plasma generation source of Fig. 1a.
Fig. 4 is a cross-sectional view showing the configuration of a rectangular or cylindrical microwave irradiation device applied to the plasma generating source of Fig. 1a.
Fig. 5 is a cross-sectional view showing the configuration of a sputtering apparatus using the plasma generation source of Fig. 1a.
Fig. 6 is a cross-sectional view showing a source of a neutral particle beam which is formed by deforming the sputtering apparatus of Fig. 5.
Fig. 7 is a cross-sectional view showing an embodiment of a thin film deposition system in which the sputtering apparatus of Fig. 5 and the neutral particle beam generating source of Fig. 6 are combined.
Fig. 8 is a cross-sectional view showing an outline of a configuration of a neutral particle beam generating source of the present invention including a limiter.

100. . . Plasma chamber

200. . . Microwave irradiation device

400. . . Ribbon magnet

Claims (10)

A plasma generating source comprising:
a plasma chamber forming a plasma generating space;
a pair of strip magnets arranged to surround the outer wall of the plasma chamber; and a microwave irradiation device to irradiate the plasma generating space with microwaves;
Wherein the strip magnet has a continuous magnet array, and the microwave irradiation device adjusts the irradiation direction to irradiate the microwave so that the electric field of the microwave is perpendicular to the direction of the magnetic field formed by the pair of strip magnets in the plasma generating space. Thereby the plasma density is increased in accordance with the magnetic field distribution. The plasma generating source according to claim 1, wherein the plasma chamber and the microwave irradiation device communicate with each other by an opening that irradiates the microwave, and the plasma chamber and the microwave irradiation device can be vacuumed together. The plasma generating source according to claim 1, wherein the plasma chamber is constituted by one of a cylindrical, polygonal or polygonal bottom surface having an elliptical track bottom surface, the microwave irradiation device comprising a rectangular waveguide a cylindrical waveguide, a circular waveguide, a circular waveguide, or a slit-shaped waveguide formed in a rectangular waveguide, a cylindrical waveguide, a circular waveguide, or a circular waveguide, The microwave irradiation device illuminates the microwave in a pulse mode or a continuous mode. A sputtering apparatus in which one or more targets are disposed in the plasma chamber of the plasma generating source according to claim 1 or 2, and a bias voltage is applied to the target to excite sputtering. The target is attached to one or more sides along the inner side wall of the plasma chamber to be surrounded by a magnetic field formed by the strip magnet in the plasma generating space, and is further disposed on the upper surface of the plasma chamber along the side of the plasma chamber. The one or more targets are arranged in a direction such that more than one substance can be simultaneously deposited onto a substrate. The sputtering apparatus according to claim 4, wherein the bias voltage applied to the target is a direct current voltage, an alternating current voltage, a pulse, or a voltage formed by a direct current voltage, an alternating current voltage, or a pulse mixture. A neutral particle beam generating source, which is provided with one or more neutralizing reflectors made of a substance having conductivity, in the plasma chamber of the plasma generating source according to claim 1 or 2, And applying a bias voltage to the neutralization reflector to generate a neutral particle beam, the neutralization reflector attaching more than one along the inner sidewall of the plasma chamber to be used by the ribbon magnet in the plasma generation space The formed magnetic field is surrounded by one or more targets arranged in a direction juxtaposed above the plasma chamber on the plasma chamber to generate the neutral particle beam. A source of neutral particle beam generation, comprising:
a plasma chamber providing a plasma discharge space for generating a plasma;
a neutralization reflector disposed inside the plasma chamber for converting ions of the plasma into a neutral particle by collision;
a limiter disposed at a lower end of the plasma discharge space for confining ions and electrons of the plasma other than the neutral particles to the plasma discharge space;
a microwave irradiation device mounted in the plasma chamber to emit microwaves into the plasma chamber; and a pair of strip magnets surrounding the periphery of the plasma chamber, each of the strip magnets of the pair of strip magnets exhibiting a band The inner side and the outer side are complementary magnetic polarities, and the magnetic polarities of the two strip magnets arranged side by side around the plasma chamber are complementary in the upper and lower positions. A thin film deposition system in which one or more sputtering apparatuses as described in claim 4 of the patent application are provided, and one or more of the neutral particle beam generation sources as described in claim 6 of the patent application are combined. The thin film deposition system of claim 8, wherein the bias voltage applied to the target or the neutralization reflector is a direct current voltage, an alternating current voltage, a pulse, or a mixture of a direct current voltage, an alternating current voltage, and a pulse. And the voltage formed. The thin film deposition system of claim 6 or 7, wherein the neutralization reflector is composed of one of metal, silicone or graphite.