CN211897094U - Hardware configuration and system for physical sputtering - Google Patents

Abstract

The utility model discloses a hardware configuration of physical sputtering, which comprises a target component configured as a cathode for generating sputtering particles; and a substrate for depositing the sputtering particles to form a deposited film. Wherein the target member comprises at least a first target member and a second target member, which are independent of each other; said first target member having a substantially uniform first erosion rate along its length; and said second target member has a substantially uniform second erosion rate along its length. The utility model also discloses a system of physics sputtering, hardware configuration and other accessories including above-mentioned physics sputtering.

Description

Hardware configuration and system for physical sputtering

RELATED APPLICATIONS

The utility model discloses the application requires that the application date of singapore patent application number 10201902041W 2019 year 03 month 07 day does the utility model discloses a priority date. The singapore priority patent application is entitled "hardware configuration for a linear physical sputtering system and method of using the system to deposit a film on a substrate. (i.e., the original English heading A Hardware Configuration for a Linear magnet positioning System and a method for Deposing a Film on a Substrate Using the Same Same). The entire or pertinent contents of the singapore priority patent application are incorporated by reference herein.

Technical Field

The present application is in the field of physical vapor deposition. In particular, the present application relates to a hardware configuration and system for physical sputtering.

Background

Magnetron sputtering techniques control the plasma by generating a magnetic field for sputter deposition. Several types of magnetron sputtering hardware configurations exist in the prior art, for example, US patents 5328585 and US 5298137. The common feature of the arrangement is that there is an elongated target member coupled to a Direct Current (DC) power source, a magnet arrangement located above the target member, and a mechanism to move the substrate below the target member. The magnet arrangement confines the charged particles in the plasma in the vicinity of the target member, also referred to as the cathode. This results in an increase in plasma density in the vicinity of the target member, which in turn can increase the sputtering rate of the target member. Fig. 1a, 1b and 2 will be explained in detail.

Fig. 1a and 1b show a top view and a cross-sectional view, respectively, of a conventional magnetron sputtering hardware configuration. The magnetron sputtering hardware arrangement described above comprises a target member 51 and a magnet arrangement 52 directly above the target member 51 for generating a racetrack magnetic field 53 below the target member 51. The magnet arrangement 52 has two magnets: an inner magnet 52a located at a central position of the target member 51; and an outer magnet 52b surrounding a peripheral position of the target member 51 and extending along a length direction of the target member 51. Specifically, the polarity of the inner magnet 52a and the outer magnet 52b is opposite on the side facing the target member 51. Preferably, for the side facing the target member 51, the outer magnet 52b is south and the inner magnet 52a is north. Preferably, the upper end of the magnet 52 is connected to a ferromagnetic metal plate 54, such as iron (iron), for effective demagnetization (magnetic return); while the lower end of the magnet 52 remains open. The inner magnet 52a and the outer magnet 52b are sufficiently separated such that their magnetic fields 53 pass through the target member 51 and form a racetrack shaped magnetic field 53 below the target member 51.

FIG. 2 illustrates a cross-sectional view of a conventional magnetron sputtering system 55 for sputter depositing material on a larger area substrate. The target member 51 and magnet arrangement 52 described above are located near the upper wall periphery of the housing 56. A Direct Current (DC) power supply 57 generates Direct Current (DC) power to power the target member 51. The Direct Current (DC) power applied to the target member 51 may be in the range of several hundred watts to several tens of kilowatts, depending on the desired deposition rate and the size of the substrate.

A substrate support 58 is connected to an electromechanical rail system 59 that can move the substrate support 58 through the target member 51 at a predetermined speed. The electromechanical rail system 59 includes a stepper motor or high resolution motor, a drive shaft and sensors for detecting the start and end positions of the electromechanical rail system 59. Preferably, the substrate support 58 has a mechanical clamping system (not shown) for clamping a substrate 60 placed thereon. The size of the substrate holder 58 is determined by the size of the substrate 60.

In operation, the chamber 66 enclosed by the housing 56 is evacuated and filled with an inert gas to maintain a low vacuum. Preferably, the inert gas is argon (Ar). A plasma is generated within a chamber 66 enclosed by the housing 56 by applying a suitable negative Direct Current (DC) power to the target member 51. Electrons and positive ions in the plasma are trapped by the racetrack magnetic field 53, thereby increasing the plasma density. The positive ions in the plasma are accelerated toward the target member to obtain energy, and then sputter the target member 51. Since the plasma is confined primarily to the racetrack magnetic field 53, the erosion profile 61 of the target member 51 also has the same racetrack shape.

Fig. 3a and 3b show erosion curves for the target member 51 of the magnetron sputtering system 55 of fig. 1a and 1b, respectively. As shown in fig. 3a and 3b, the target member 51 erodes more significantly in the region inside the racetrack-shaped magnetic field 53 than in other regions. Thus, when the area inside the racetrack magnetic field 53 is completely eroded, the target member as a whole is consumed only 30-40%, but a new target member 51 still needs to be replaced. This is a common disadvantage of linear magnetron plasmas with a racetrack magnetic field 53.

Another disadvantage of the above-described linear magnetron sputtering system is that it is used for the deposition of dielectric materials, for example with silicon dioxide (SiO)₂) With respect to the silicon (Si) target member 51, the above-described dielectric material may be deposited on the target member 51 in areas that are not subject to erosion during sputter deposition. Therefore, arcing and particle generation may occur after the dielectric layer is formed on the target member 51, resulting in defects on the deposited film.

Therefore, in Direct Current (DC) magnetron sputtering systems, global surface erosion of the target member 51 is critical, especially when depositing dielectric materials. The above-mentioned drawback can be overcome by swinging a magnet device on the target member 51. US patent (US5,328,585) describes two magnet arrangements that reciprocate on a rectangular target member. However, its complicated magnet arrangement and cooling mechanism for the target member limit its application. Similarly, it is also proposed in US patent (US5,382,344) to use a plurality of magnet devices to reciprocate over a rectangular target member. However, it is very difficult to manufacture a plurality of magnet devices for covering the entire target member. In addition, U.S. patent (US7,101,466) also describes moving a magnet assembly over a target member.

The use of the above-described moving magnet arrangement on a rectangular target member can reduce or even eliminate the non-uniformity of target member erosion, which can increase the target member utilization, eliminate arcing and produce a particle-free deposited film. However, the above moving magnet configuration requires a complicated hardware configuration. In addition, the above moving magnet arrangement also has the following disadvantages: once the outer magnet moves to a region away from the target member, the plasma may strike the shield plate, sputtering the material of the shield plate, and contaminating the deposited film.

The above described magnet arrangement with a racetrack magnetic field has another disadvantage in that the target member 51 must be wide enough to cover all magnet arrangements. When the magnet arrangement oscillates, the target member must be widened further. Similarly, if a plurality of magnet arrangements are placed above the above-described target member and oscillated, the width of the target member needs to be further widened. Generally, all target components are made of high purity materials, which are expensive, and therefore rectangular target materials of large dimensions are not used as much as possible.

Therefore, the present application aims to solve the above-mentioned problems. It is a first object of the present application to provide a simple physical sputtering system having a small target member, a uniform erosion rate along the length of the target member, and no need for any moving magnet arrangement.

It is a second object of the present application to provide a hardware configuration that allows a metal alloy (e.g., a nickel-iron (NiFe) alloy) to be deposited in any desired composition by using two separate target members when the two members use different metals (e.g., nickel (Ni) and iron (Fe), respectively).

A third object of the present application is to facilitate ionization of sputtered atoms so that the ionized atoms can be attracted to the substrate and deposited on the sidewalls and bottom surfaces of the holes (via) or trenches (trench).

SUMMERY OF THE UTILITY MODEL

In view of the above problems in the prior art, the present application describes a hardware configuration and system for physical sputtering, and in particular, a hardware configuration and system for magnetron sputtering. The target member is subject to very uniform erosion compared to prior art systems. The physical sputtering system employs a fixed rectangular magnet assembly, thereby simplifying hardware and operating procedures. The embodiments disclosed in the present application may be combined with each other unless explicitly stated otherwise. Although not described in detail, combinations of the embodiments in the present application may produce synergistic effects.

According to a first aspect of the present application, the present invention provides a hardware configuration for physical sputtering.

The hardware configuration of physical sputtering comprises a target member configured as a cathode for generating sputtering particles; a substrate for depositing the sputtering particles to form a deposited film; and a power source configured to be connected to the target member for configuring the target member as a cathode. Wherein the target member comprises at least a first target member and a second target member, which are independent of each other; said first target member having a uniform first erosion rate along its length; and said second target member has a uniform second erosion rate along its length. The uniform first erosion rate and the uniform second erosion rate may effectively improve the quality of a deposited film on a substrate.

Alternatively, the first and second target members described above may be arranged in any suitable form.

Preferably, the first target member and the second target member are arranged in parallel with each other.

Optionally, the substrate includes wafers (wafers) of various sizes, such as 150 millimeter (mm) diameter wafers.

Alternatively, the substrate may include panels (panels) of various sizes, such as 2 meters (m) by 5 meters (m).

Optionally, the power supply is a dc power supply.

Optionally, the power source is a low frequency rf power source for generating a negative self-bias voltage (negative self-bias voltage) on the surface of the target member, thereby increasing the sputtering rate and the film deposition rate, and facilitating the deposition of the thin film on the inner walls of the holes (vias) or trenches (trenches) having an aspect ratio exceeding 2.

Preferably, the frequency of the low frequency rf power source is in a range of 200 kilohertz (KHz) to 2 megahertz (MHz).

The hardware configuration for physical sputtering may further include a magnet configuration including at least a first outer magnet, a second outer magnet, and a central magnet located between the first outer magnet and the second outer magnet. Wherein the first target member is located between the first outer magnet and the central magnet; the second target member is located between the second outer magnet and the central magnet; the magnet arrangement produces a uniform magnetic field and completely covers the target member. This physical sputtering with a magnet configuration is also referred to as magnetron sputtering.

The first target member and the second target member may be any suitable shape, and the shapes may be the same or different.

Preferably, the first target member and the second target member have a rectangular shape. Wherein the first target member has a first target member length, a first target member width and a first target member height; and said second target member having a second target member length, a second target member width and a second target member height; more preferably, the first and second target member lengths are 20 to 40 millimeters greater than the size of the substrate; the first and second target member widths are in a range of 10 millimeters to 100 millimeters; the first target member height and the second target member height are in a range of 5 millimeters to 30 millimeters.

The magnet arrangement needs to substantially completely cover the target member and is therefore determined by the shape and size of the target member. Said first outer magnets having a first outer magnet length; the central magnet has a central magnet length; the second outer magnet has a second outer magnet length.

Optionally, the first outer magnet length, the center magnet length, and the second outer magnet length are each 10 millimeters to 50 millimeters greater than the first target member length and the second target member length.

The first target member and the second target member may further comprise smaller structures.

Optionally, the first target member further comprises two or more mutually independent first patches; the size, shape and arrangement mode can be selected according to actual needs; the second target member may further comprise two or more second patches independent of each other, the size, shape and arrangement of which may also be selected according to practical needs.

The first outer magnet, the central magnet, and the second outer magnet may be fixed in place as desired.

Optionally, the first outer magnet, the central magnet, and the second outer magnet are positioned in parallel, and are also positioned in parallel with the first target member and the second target member.

Optionally, the first outer magnet, the central magnet, and the second outer magnet are disposed at an angle in a range of 0 degrees to 45 degrees.

The first target member comprises a first target material and the second target member comprises a second target material. Wherein the first target material is the same as or different from the second target material.

In particular, when the first target material and the second target material are different, the hardware configuration of physical sputtering can also be used to deposit an alloy of the first target material and the second target material. The alloy may have any desired composition.

For example, when the first target material and the second target material are nickel (Ni) and iron (Fe), respectively, the hardware configuration of physical sputtering can be used to deposit a nickel-iron alloy, which can have any desired composition.

According to a second aspect of the present application, the present invention provides a system for physical sputtering.

The system for physical sputtering comprises:

a hardware configuration of the above physical sputtering, including a target member and a magnet configuration;

a radio frequency coil positioned below the target member and the magnet arrangement and at a distance in the range of 1 cm to 5 cm from the target member and the magnet arrangement;

the radio frequency generator and the radio frequency matcher are used for cooperating with the radio frequency coil to generate plasma;

a substrate holder for holding the substrate;

a motor controlled rail system for moving said substrate support horizontally;

an inert gas source for providing an inert gas;

and a chamber for housing the physical sputtering hardware configuration, the radio frequency coil, the substrate support, and the motor control track system.

The physical sputtering system may further include an electrostatic chuck that flattens the slightly warped substrate to precisely control the temperature and temperature uniformity of the substrate.

Optionally, a low frequency rf power may be applied to the substrate support when the electrostatic chuck is within the substrate support to create a negative self-bias on the substrate to facilitate deposition of a thin film on the inner walls of the holes (vias) or trenches (trenches) having an aspect ratio in excess of 2.

In view of the foregoing, the present invention describes a simple physical (e.g., magnetron) sputtering hardware configuration that has a uniform erosion rate for the target member. The hardware configuration can deposit a film of uniform thickness on a substrate, including a wafer or panel. Furthermore, the hardware configuration may also deposit metal alloys having any desired composition.

Drawings

FIG. 1a shows a top view of a conventional magnetron sputtering hardware configuration.

FIG. 1b shows a cross-sectional view of the magnetron sputtering system of FIG. 1 a.

FIG. 2 shows a top view of a conventional magnetron sputtering system, which is suitable for large substrates.

FIG. 3a shows an erosion curve of a target member in the magnetron sputtering system of FIG. 1 a.

FIG. 3b shows an erosion curve for the target member in the magnetron sputtering system of FIG. 1 b.

Fig. 4a shows a top view of a first embodiment of the hardware configuration of physical sputtering (magnetron sputtering) in the present application.

Figure 4b shows one configuration of the target member and magnet arrangement of the first embodiment of figure 4 a.

Fig. 4c shows another configuration of the target member and magnet arrangement in the first embodiment of fig. 4 a.

Fig. 5 shows a top view of a second embodiment of the hardware configuration of physical sputtering (magnetron sputtering) in the present application.

Fig. 6 shows the movement trajectories of the magnetic field and electrons under the target member in the first embodiment or the second embodiment.

Fig. 7 shows a cross-sectional view of a first embodiment of the system for physical sputtering (magnetron sputtering) in the present application.

Fig. 8 shows a cross-sectional view (non-magnetron sputtering) of a second embodiment of the system of physical sputtering in the present application, without a magnet arrangement.

The numbers in the figures are as follows:

51. target member, 52, magnet arrangement, 52a, inner magnet, 52b, outer magnet, 53, racetrack magnetic field, 54, ferromagnetic metal plate, 55, magnetron plasma system, 56, housing, 57, Direct Current (DC) power supply, 58, substrate holder, 59, electromechanical track system, 60, substrate, 61, erosion profile, 62, inert gas conduit, 63, inert gas inlet tube, 64, valve, 65, vacuum system, 66, chamber;

1. a target member, 1a, a first target member, 1b, a second target member, 2, a magnet arrangement, 2a, a first outer magnet, 2b, a central magnet, 2c, a second outer magnet, 3, a target member width, 4, a target member height, 5, a magnetic field, 6, a chamber, 7, a Direct Current (DC) power supply, 7a, a first DC power supply, 7b, a second DC power supply, 7c, a third DC power supply, 7d, a fourth DC power supply, 7e, a fifth DC power supply, 7f, a sixth DC power supply, 8, a radio frequency coil, 9, a radio frequency generator, 9a, a first radio frequency generator, 9b, a second radio frequency generator, 9c, a third radio frequency generator, 10, a radio frequency matcher, 10a, a first radio frequency matcher, 10b, a second matcher, 10c, a third matcher, 11, a substrate, 12, a substrate holder, 13, a motor control track system, 14. electron, 15, ferromagnetic plate, 16, first direction of motion of ions under the target member, 17, second direction of motion of ions under the target member, 18, inert gas conduit, 19, inert gas inlet, 20, valve, 21, vacuum pump and controller, 22, direction of motion of substrate support.

Detailed Description

The technical solution of the present invention will be further clearly and completely described below with reference to the accompanying drawings and examples. Technical terms used in the present application take their usual meanings unless a specific meaning is stated in the present application, and definitions thereof will be given below.

First embodiment

Fig. 4a, 4b, 4c, 5, 6, 7 explain a first embodiment of a physical sputtering system in the present application. Fig. 4a shows a top view of a first embodiment of the hardware configuration of physical sputtering in the present application. Wherein the target member 1 comprises a first rectangular target member 1a and a second rectangular target member 1b, each sandwiched between rectangular magnet arrangements 2. The length of the target member 1 is not particularly required, and depends on the size of the substrate to be treated. If the substrate is circular, the length of the target member 1 is 20 to 40 millimeters (mm) longer than the diameter of the circular substrate. If the substrate is rectangular, the length of the target member 1 is 20 to 40 millimeters (mm) longer than the width of the rectangular substrate. The target member 1 has a target member width 3, which is not particularly required, and may be in the range of 10 millimeters (mm) to 100 millimeters (mm). The larger the target member width 3, the larger the surface area that can be sputtered, thereby increasing the film deposition rate. However, the strength of the magnetic field 5 must also be increased correspondingly, which requires a larger volume of the magnet arrangement 2. At this time, the entire system is bulky and difficult to assemble, so the target member width 3 cannot be too wide. The target member 1 has a target member height 4, which is not particularly required, and is generally in the range of 5 millimeters (mm) to 30 millimeters (mm). In general, the target member height 4 is desirable to facilitate a simple system design and ease of assembly and maintenance.

Fig. 4b shows a configuration of the target member and magnet arrangement of the first embodiment in fig. 4 a. The rectangular magnet arrangement 2 comprises a first outer magnet 2a, a second outer magnet 2c, and a central magnet 2b, which is located between the first outer magnet 2a and the second outer magnet 2 c. For the downward direction, the central magnet 2b and the first and second outer magnets 2a, 2c have opposite magnetic poles. Preferably, the north pole of the central magnet 2b is facing downwards and the south pole of the outer magnets 2a, 2c is facing downwards. The magnet arrangement 2 generates a toroidal magnetic field 5 below the target member 1. Preferably, the upper side of the magnet arrangement 2 is connected to a back plate, which may be a ferromagnetic plate 15, serving as a magnetic return plate. The width and strength of the magnet arrangement 2 is determined by the target member width 3, such that a magnetic field 5 is required to traverse the target member 1. The selection of specific parameters is typically determined by simulation followed by experimentation. The length of the magnet arrangement 2 is 10 to 50 millimeters (mm) longer than the target member 1.

Fig. 4c shows another configuration of the target member and magnet arrangement of the first embodiment in fig. 4 a. Wherein the target member 1 and the first and second outer magnets 2a, 2c are placed and fixed at an angle with respect to the central magnet 2 b. The angle between the target member 1 and the outer magnets 2a, 2c is not particularly required, and may be in the range of 0 to 45 degrees. With the magnet arrangement 2 of the above form, the two magnetic cusps (magnetic cusps) under the target member 1 become closer, so that the plasma can mix together, resulting in an increase in plasma density.

Fig. 5 shows a top view of a second embodiment of the hardware configuration of physical sputtering in the present application. Each rectangular target member 1 is divided into two or more chips separated from each other, and an independent Direct Current (DC) power supply 7 is provided to each of the chips. The arrangement of fig. 5 has the advantage of contributing to further improvement in the uniformity of film thickness on the substrate by individually controlling the dc power applied to each of the dies of the target member 1.

The magnet arrangement 2 generates a uniform magnetic field 5 along the rectangular target member 1, which completely covers the surface of the rectangular target member 1, so that no mechanical means are required to move the magnet arrangement 2. When plasma is produced using the magnet arrangement 2, the entire surface of the target member 1 is eroded. Moreover, since the magnetic field 5 along the target member 1 is uniform, the erosion rate to the target member 1 is also very uniform, which can effectively improve the utilization efficiency of the target member 1.

Fig. 6 shows the motion trajectory of the magnetic field and electrons under the target member. Fig. 6 depicts a schematic of the target member 1, magnet arrangement 2 (dashed line) and magnetic field 5 out of the plane of the paper. If a plasma is generated, the charged particles therein are captured by the magnetic field 5 and move in a circular path under the action of the lorentz force.

The lorentz force is defined as F ═ qvxb, where q is the charge number of the charged particles, v is their speed of motion, and B is the strength of the magnetic field 5. The radius of motion of the charged particles is r ═ mv/qB, where m is the mass of the charged particles. In the absence of the magnetic field 5, electrons 14 and positive ions in the iso-volume escape directly from the vicinity of the target member 1. This will result in a decrease in plasma density near the edge of the target member 1. Conversely, if the magnetic field 5 extends beyond the target member 1, the electrons 14 or positive ions cannot move outward, but instead follow the circular path described above, back into the plasma described above. As shown in fig. 6, the electrons 14 escaping outward follow a curved path and return into the plasma. This mechanism can prevent the plasma density in the vicinity of the edge position of the target member 1 from being weakened.

Fig. 7 shows a cross-sectional view of a first embodiment of a system for physical sputtering in the present application. The target member 1 and the magnet arrangement 2 are fixed close to the top wall of the chamber 6. Both the target member 1 and the magnet arrangement 2 are firmly fixed so that they do not move during operation. The target member 1 is supplied with a negative Direct Current (DC) voltage generated by a Direct Current (DC) power supply 7. The above target member 1 includes a first target member 1a and a second target member 1 b. If the first target member 1a and the second target member 1b described above are made of the same material, the same direct current power can be applied thereto. If the first target member 1a and the second target member 1b are made of different materials, the direct current power applied thereto can be determined according to the materials thereof.

The system for physical sputtering further comprises a radio frequency coil 8 surrounding the target member 1 and the magnet arrangement 2. The radio frequency coil 8 is located 1 cm to 5 cm below the target member 1 and the magnet arrangement 2 in the vertical direction. The rf coil 8 generates rf current through a matching box (matching box)10, thereby generating inductively coupled plasma. The physical sputtering system also comprises a radio frequency generator 9. Preferably, the radio frequency generator 9 operates at a frequency of 13.56 megahertz (MHz). However, the rf generator 9 can also be operated at higher rf frequencies, on the one hand for increasing the plasma density; on the other hand, the self-bias voltage is used for reducing the self-bias voltage (self-bias voltage) on the surface of the radio frequency coil, so that the sputtering of the radio frequency coil material is eliminated, and the pollution of a deposited film can be avoided.

The physical sputtering system also includes a substrate 11, which may be a circular wafer (wafer) or a rectangular panel (panel). The substrate 11 is placed on a substrate holder 12. the substrate holder 12 can be moved horizontally under the target member 1 and the magnet arrangement 2 by a motor-controlled rail system 13.

When the above-described physical sputtering system is used, a low pressure is maintained in the chamber 6 using an inert gas such as argon (Ar). Then, radio frequency power is applied to the radio frequency coil 8 to generate plasma, and the direct current power supply 7 is applied to the target member 1 to sputter the target member 1. Using the above-described rf plasma instead of the dc plasma can increase the plasma density under the target member 1. The plasma density is increased by two aspects: first, it helps to increase the sputtering rate of the target member 1, thereby increasing the film deposition rate on the substrate; secondly, it increases the ionization rate of sputtered atoms, which in turn facilitates the deposition of films on the inner walls of the vias (vias) and trenches (trenches) having aspect ratios exceeding 2.

Preferably, the substrate holder 12 may further include an electrostatic chuck (ESC) for flattening the slightly warped base plate 11. If the substrate 11 is flattened and physically attached to the substrate support 11, both the temperature and temperature uniformity across the substrate 11 can be more precisely controlled.

The substrate holder 12 will be connected to a negative bias when it is desired to deposit a film on the inner walls of the holes and trenches with aspect ratios greater than 2. Which is accomplished by applying low frequency (e.g., 1.2 megahertz (MHz)) radio frequency power to a planar electrode embedded within the substrate support 12. In most cases, an electrostatic chuck (ESC) electrode can be used as the planar electrode. The rf power generates a secondary plasma above the substrate support 12, thereby generating a negative self-bias voltage (negative self-bias voltage) on the substrate 11. The metal ions in the plasma are accelerated and gain energy in the plasma sheath region (plasma sheath region) above the substrate 11, so that the metal ions can reach the side walls and the bottom wall of the deep hole and trench. For clarity, the electrostatic chuck (ESC)/planar electrode and secondary rf generator described above are not labeled in fig. 7.

Once plasma is generated, the substrate 11 is slowly moved to the lower side of the target member 1 and the magnet arrangement 2 to deposit a thin film. The moving speed of the substrate 11, the direct current power or the radio frequency applied to the target member 1 can be adjusted based on the desired film deposition rate.

It should be noted that, in the first embodiment, the direct current power supply 7 is applied to the target member 1. Of course, low frequency rf power may also be used instead of dc power. Preferably, the frequency of the low frequency rf power is in a range of 200 kilohertz (KHz) to 2 megahertz (MHz). Applying radio frequency power to the target member 1 generates the negative self-bias voltage (negative self-bias voltage) at the surface of the target member 1, which increases with decreasing radio frequency, because the time for electrons to strike the target member 1 increases with decreasing radio frequency. Therefore, by selecting an appropriate low rf frequency and rf power, a negative voltage can be generated on the surface of the target member 1 to obtain a sufficient sputtering rate and film deposition rate.

Second embodiment

Fig. 8 shows a cross-sectional view of a second embodiment of the system for physical sputtering in the present application, without a magnet arrangement. The second embodiment is substantially the same as the hardware configuration of the first embodiment described above, with the only difference that the magnet arrangement 2 in the first embodiment is removed. In use, plasma is generated by applying a radio frequency current to the radio frequency coil 8. Then, low frequency Radio Frequency (RF) or Direct Current (DC) power is applied to the target member 1 for generating a negative voltage on the surface thereof.

The density of the plasma generated in the third embodiment is lower than that of the first embodiment, and therefore the ion flux and the sputtering rate of the target member are also reduced accordingly. However, since there is no magnet arrangement, the entire hardware arrangement becomes simple. Therefore, it is suitable for use in the case where a low deposition rate or a thinner deposited film is required.

In the present application, the term "about" or "approximately" denotes an interval of accuracy that a person skilled in the art will understand to still ensure the technical effect of the feature in question. The term generally means ± 20%, preferably ± 15%, more preferably ± 10%, even more preferably ± 5% of the indicated value of deviation.

Other variations to the disclosed embodiments can be understood and effected by those skilled in the art in practicing the claimed invention, from a reading of the claims, the description, and the drawings that accompany the present application. In the claims, the word "comprising" does not exclude other elements or steps, and the indefinite article "a" or "an" does not exclude a plurality. The mere fact that certain measures are recited in mutually different dependent claims does not indicate that a combination of these measures cannot be used to advantage. Any reference signs in the claims shall not be construed as limiting the scope of the claims.

It is finally necessary to point out here: the above description is only for the preferred embodiment of the present invention, but the protection scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention should be covered by the protection scope of the present invention.

Claims (10)

1. A hardware configuration for physical sputtering, comprising:

a target member configured as a cathode for generating sputtered particles;

a substrate for depositing the sputtering particles to form a deposited film; and

a power source configured to be connected to the target member for configuring the target member as a cathode;

the method is characterized in that:

the target members include at least a first target member and a second target member, which are independent of each other;

said first target member having a uniform first erosion rate along its length; and

the second target member has a uniform second erosion rate along its length.

2. The hardware configuration for physical sputtering of claim 1, further comprising:

a magnet arrangement comprising at least a first outer magnet, a second outer magnet, and a central magnet located between said first outer magnet and said second outer magnet; wherein,

the first target member is located between the first outer magnet and the central magnet;

the second target member is located between the second outer magnet and the central magnet;

the magnet arrangement produces a uniform magnetic field and completely covers the target member.

3. The hardware configuration for physical sputtering of claim 1, wherein:

the first and second target members have a rectangular shape; wherein,

said first target member having a first target member length, a first target member width and a first target member height;

said second target member having a second target member length, a second target member width and a second target member height;

the first and second target member lengths are 20 mm to 40 mm larger than the size of the substrate;

the first and second target member widths are in a range of 10 millimeters to 100 millimeters;

the first target member height and the second target member height are in a range of 5 millimeters to 30 millimeters.

4. The hardware configuration for physical sputtering of claim 1, wherein:

the first target member further comprises at least two mutually independent first patches;

the second target member further comprises at least two second patches independent of each other.

5. The hardware configuration for physical sputtering of claim 1, wherein:

the first target member comprises a first target material;

the second target member comprises a second target material;

wherein the first target material is the same as or different from the second target material.

6. The hardware configuration for physical sputtering of claim 2, wherein:

said first outer magnets having a first outer magnet length;

the central magnet has a central magnet length;

said second outer magnet having a second outer magnet length;

wherein the first outer magnet length, the center magnet length, and the second outer magnet length are each 10 millimeters to 50 millimeters greater than the first target member length and the second target member length.

7. The hardware configuration for physical sputtering of claim 2, wherein:

the first outer magnet, the central magnet, and the second outer magnet are disposed in parallel, and are also disposed in parallel with the first target member and the second target member.

8. The hardware configuration for physical sputtering of claim 2, wherein:

the first outer magnet, the central magnet, and the second outer magnet are disposed at an angle in a range of 0 degrees to 45 degrees.

9. A system for physical sputtering, comprising:

a hardware configuration for physical sputtering as claimed in any one of claims 2, 6, 7 or 8, including a target member and magnet configuration;

a radio frequency coil positioned below the target member and the magnet arrangement and at a distance in the range of 1 cm to 5 cm from the target member and the magnet arrangement;

the radio frequency generator and the radio frequency matcher are used for cooperating with the radio frequency coil to generate plasma;

a substrate holder for holding the substrate;

a motor controlled rail system for moving said substrate support horizontally;

an inert gas source for providing an inert gas; and

a chamber for housing the physical sputtering hardware configuration, the radio frequency coil, the substrate support, and the motor control track system.

10. The system of physical sputtering of claim 9, further comprising:

an electrostatic chuck within the substrate support;

wherein applying a low frequency RF power to the substrate support generates a negative self-bias voltage on the substrate.

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