JPH04276069A - Method and device for sputtering - Google Patents

Abstract

PURPOSE:To enhance the utilization efficiency of a target material consisting of a thin film forming material and to control the erosion shape of the target in its depth direction. CONSTITUTION:A substrate 8 and a target 6 are relatively moved, and a film is formed on the surface of the substrate 8 by this sputtering system. In the system, a magnetic device (a central magnetic pole 1, an outer magnetic pole 2 and an intermediate magnetic element 7) is arranged at the rear of the target 6 to generate a magnetic field, and the magnetic field distribution close to the upper surface of the target 6 is adjusted by the magnetic element 7.

Description

[Detailed description of the invention]

0001

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sputtering method and apparatus for forming a thin film using glow discharge, and more particularly to a magnetron sputtering method and apparatus.

0002

2. Description of the Related Art Magnetron sputtering technology, also called low-temperature high-speed sputtering, has many advantages over previous bipolar sputtering and has been widely used. A feature of this magnetron sputtering technology is that it uses so-called magnetron discharge, in which an electric field and a magnetic field are perpendicular to each other, to generate high-density plasma near the target.

FIGS. 23 to 26 show a conventional example of a diameter 8
FIG. 23 is a diagram illustrating a sputtering method and its apparatus having a circular planar magnetron sputtering cathode of inch size, FIG. 23 shows the main structure, and FIG. Figure 2 shows the erosion state of
5 is a diagram showing the magnetic flux density component in the horizontal direction on the target surface in the range from the center of the surface directly above the target to the outer periphery of the leakage magnetic field generated by the magnetic device disposed inside the cathode part having the cross-sectional structure shown in FIG. Figure 26 shows the magnetic flux density distribution of the leakage magnetic field directly above the target, and Figure 26 shows the magnetic flux density distribution from the center of the target when oxygen-free copper with a diameter of 8 inches is used as the target with a cathode having the cross-sectional structure shown in Figure 24 until the end of its life. It shows the state of erosion in the range up to the outer periphery.

In these figures, 1 is a central magnetic pole made of a permanent magnet, 2 is an outer circumferential magnetic pole made of a permanent magnet, 5 is a yoke made of a soft magnetic material that magnetically couples the central magnetic pole 1 and the outer circumferential magnetic pole 2, and 6 is a yoke made of a soft magnetic material. 1 is a target made of a film-forming material, 8 is a substrate, 11 is a tunnel-shaped magnetic line of force formed by the magnetic circuit between the central magnetic pole 1 and the outer magnetic pole 2, and 14 is annular plasma confined by the tunnel-shaped magnetic line of force 11. ,1
5 is an eroded portion representing a portion of the target 6 eroded by the collision of sputtering gas ions in the plasma 14; 20 is a vacuum container; 21 is an outer wall of the cathode portion; 22 is the target 6.
and a water pipe for cooling the inside of the cathode part; 23 is an insulator having a vacuum sealing function and electrical insulation function for connecting the cathode part to the vacuum container 20; 24 is an anode ring for adjusting the plasma potential as necessary; 25 is an insulator having a vacuum sealing function and an electrical insulation function; A current introduction terminal supplies power from a power source outside the vacuum container 20 to the anode ring 24, 26 is an insulator that electrically insulates and fixes the anode ring 24 to the vacuum container 20, and 27 is used to place the substrate 8 for cooling or heating. 28 is a substrate mounting means that maintains a predetermined temperature and is electrically insulated from the vacuum container 20; 28 is a substrate ground shield; 29 is a vacuum seal function that connects the substrate mounting means 27 and the substrate ground shield 28; An insulator having an electrical insulation function, 30 a mass flow control valve that introduces gas for sputtering, 31 an exhaust device that exhausts the inside of the vacuum container 20, and 40 that generates plasma for sputtering on the target 6 and the cathode portion. A high voltage power source 41 for sputtering supplies high voltage to the anode ring 24 as required.

[0005]

[Problems to be Solved by the Invention] Magnetron discharge due to orthogonal electromagnetic fields, which is a feature of magnetron sputtering, is caused by ionization from sputtering gas molecules due to a leakage magnetic field directly above the target formed by a magnetic element provided near the cathode. Since electrons or secondary electrons generated by the sputtering phenomenon are focused, the probability of collision between electrons and sputtering gas molecules increases, and the plasma density increases, so the sputtering rate (film formation rate, deposition rate) increases. This is a significant improvement over previous methods such as two-pole sputtering. On the other hand, as shown in FIGS. 24 to 26, the state of erosion of the target 6 (the state in which the target material is ejected and consumed by sputtering) is most intense directly under the high-density plasma focused on the leakage magnetic field.
In particular, in the magnetic flux density distribution in the range from the center of the surface directly above the target to the outer periphery, the horizontal magnetic flux density component with respect to the target surface has approximately the maximum value, and the vertical magnetic flux density component between the center and the outer periphery has a maximum value. At a position changing from positive to negative or from negative to positive, the magnetron discharge is maintained and the target material is significantly consumed as the erosion progresses (as the deposition time progresses). Therefore, the cross-sectional shape of the target 6 that has reached the end of its service life assumes a substantially V-shaped eroded state as shown in FIG. 26, and its volume utilization rate is approximately 20%.
This has been a particular problem when forming a film using an expensive target material. In addition, as the approximately V-shaped erosion progresses, the scattering direction of the target particles ejected by the sputtering phenomenon changes, so if the target 6 becomes worn out, the thickness distribution of the film deposited on the substrate 8 can be kept constant. It was difficult to keep it in place.

[0006] In order to solve these problems, the present invention provides a sputtering method that can increase the utilization efficiency of a target material made of a film-forming substance as a raw material for a thin film, and can control the erosion shape of the target in the depth direction. The purpose is to provide such equipment.

[0007]

[Means for Solving the Problems] In order to achieve the above object, the present invention provides a sputtering method in which a magnetic device is disposed near a cathode portion which has a structure in which a target can be placed and a voltage can be applied, and which has a cooling function. In the structure, at least two sets of magnetic elements of this magnetic device are composed of permanent magnets whose magnetization directions or orientations have an angular difference within ±60 degrees with respect to a plane parallel to the target surface, and one of the magnetic elements is arranged in an annular shape near the center of the target. The N poles of the permanent magnets that constitute the magnetic elements are arranged in a circular manner near the outer periphery of the target, and face the center line shared by each magnetic element and/or a plane formed by a series of center lines. Alternatively, this can be achieved by arranging at least one set of intermediate magnetic elements, all of whose S poles have the same polarity, and which is equipped with a magnetic field distribution adjusting means near the top surface of the target, in a ring shape between the center and the outer periphery of the back surface of the target. Note that if the means shown in (1) to (4) below are applied as at least one set of intermediate magnetic elements equipped with the above-mentioned magnetic field distribution adjustment means near the upper surface of the target,
The generation form and/or width of the region of high-density plasma directly above the target that contributes to sputtering can be adjusted. (1) Among the magnetic elements of the magnetic device placed near the cathode part, at least one set of intermediate magnetic elements placed between the center and the outer periphery of the back surface of the target has a magnetization direction with respect to a plane parallel to the target surface. or at least two sets of magnetic elements formed in an annular configuration of permanent magnets whose orientations have an angular difference within ±60 degrees, and arranged in an annular manner near the N pole or S pole of the permanent magnet and near the target center and near the outer periphery. The polarity of the permanent magnets constituting the magnetic elements are all on the same side toward the center line shared by each magnetic element and/or the plane formed by the center lines being connected, and in order to adjust the magnetic distribution near the top surface of the target, By providing a drive means that allows the magnetic element to be adjusted in distance from and near the target surface, and by adjusting the drive means for this intermediate magnetic element, the utilization rate of the target material consisting of the film forming substance can be improved, and the state of wear of the target can be reduced. The film is formed under control so that the erosion width remains the same even when the erosion progresses. Alternatively, by interlocking the adjustment of the driving means of the intermediate magnetic element with target consumption, film formation can be performed while arbitrarily controlling the erosion shape in the depth direction of the target. (2) For this purpose, among the magnetic elements of the magnetic device arranged near the cathode part, at least one set of intermediate magnetic elements arranged between the center and the outer periphery of the back surface of the target is aligned with the plane parallel to the target surface. At least two sets of permanent magnets having an annular configuration with an angular difference in magnetization direction or orientation within ±60 degrees, and arranged in an annular manner near the center of the target and near the outer periphery of the polarity of the N pole or S pole of the permanent magnet. In order to set the polarity of the permanent magnets constituting the magnetic elements on the same side toward the center line shared by each magnetic element and/or a plane formed by a series of center lines, and to adjust the magnetic distribution near the top surface of the target. The intermediate magnetic element is provided with driving means that can adjust the distance from and to the target surface. (3) As another method, among the magnetic elements of the magnetic device placed near the target, at least one set of intermediate magnetic elements placed between the center and the outer periphery of the back surface of the target is composed of an electromagnet such as a solenoid coil. arranged in parallel to the target surface, and provided with excitation means having the function of supplying and adjusting the excitation current of the electromagnet, which is the intermediate magnetic element, in order to adjust the magnetic field distribution near the upper surface of the target.
By adjusting the excitation means of this intermediate magnetic element, the utilization efficiency of the target material consisting of the film-forming substance can be improved, and even if the target wears out, the erosion width can be controlled to be the same. To form a film. Alternatively, by interlocking the adjustment of the excitation means of the intermediate magnetic element with target consumption, the erosion shape in the depth direction of the target can be arbitrarily controlled to form a film. (4) For this purpose, among the magnetic elements of the magnetic device arranged near the cathode part, at least one set of intermediate magnetic elements arranged between the center and the outer periphery of the back surface of the target is composed of an electromagnet such as a solenoid coil. is arranged parallel to the target surface, and is provided with excitation means having a function of supplying and adjusting an excitation current of the electromagnet, which is the intermediate magnetic element, in order to adjust the magnetic field distribution near the upper surface of the target.

[0008]

[Operation] In the present invention, in the range from the center to the outer periphery of the magnetic flux density distribution of the leakage magnetic field generated directly above the target by this magnetic device, the magnetic flux density component in the horizontal direction with respect to the target surface changes from a single peak characteristic. It can be adjusted to a strong bimodal characteristic, and the slope of the magnetic flux density component in the vertical direction between the center and the outer periphery can be controlled from positive to negative or from negative to positive with the slope approximately zero. Therefore, the generation form and/or region of the high-density plasma directly above the target that contributes to sputtering is wide, and the width of the region can be adjusted, improving the effectiveness of the use of the target material made of the film-forming substance.
By controlling at least one set of intermediate magnetic elements equipped with magnetic field distribution adjustment means near the upper surface of the target so that the erosion width remains the same even when the target wears out, the target particles are ejected by the sputtering phenomenon. There is very little change in the scattering direction of the film, making it possible to keep the thickness distribution of the film deposited on the substrate constant. Alternatively, the erosion shape in the depth direction of the target can be arbitrarily adjusted by controlling at least one set of magnetic elements equipped with magnetic distribution adjustment means near the upper surface of the target in conjunction with target consumption.

[0009]

Embodiments Hereinafter, embodiments of the present invention will be explained in detail with reference to the drawings. 1 to 22 are diagrams illustrating a sputtering method and apparatus thereof according to the present invention. In FIG. 1, 1 is a central magnetic pole made of a permanent magnet whose magnetization direction or orientation has an angular difference within ±60 degrees with respect to a plane parallel to the surface of target 6, and 2 is a central magnetic pole with respect to a plane parallel to target 6. The outer peripheral magnetic pole 3 is made of a permanent magnet whose magnetization direction or orientation has an angular difference within ±60 degrees, and the intermediate magnetic element 7 is connected to the target 6 surface or the central magnetic pole 1 and the outer peripheral magnetic pole 2 via the connecting drive shaft 4. 4 is a connecting drive shaft made of a non-magnetic material that mechanically connects the intermediate magnetic element driving device 3; 6 is a target made of a film-forming material; 7 is a target 6; An intermediate magnetic element for adjusting the magnetic field distribution near the top surface of the target, consisting of a permanent magnet whose magnetization direction or orientation has an angular difference within ±60 degrees with respect to a plane parallel to the plane; 8 is a substrate; 11 is a central magnetic pole 1 and an outer periphery; A tunnel-shaped magnetic field line formed by a magnetic circuit between the magnetic pole 2, 14 an annular plasma confined by the tunnel-shaped magnetic field line 11, and 15 a target 6 eroded by collision of sputtering gas ions in the plasma 14. This is an eroded area.

11 and 20 is an electromagnet (solenoid coil) arranged between the central magnetic pole 1 and the outer magnetic pole 2 on the back surface of the target 6 in order to adjust the magnetic field distribution near the upper surface of the target 6. The constructed first intermediate magnetic element 60 is an electromagnetic excitation means 6 for adjusting the magnetic distribution near the upper surface of the target 6 and/or switching the magnetic field generation direction.
Reference numeral 1 indicates a current introduction terminal having a sealing function for supplying excitation current from the electromagnet excitation means 60 to the intermediate magnetic element 67 constituted by an electromagnet via the cathode outer wall 21; Alternatively, a second permanent magnet made of permanent magnets arranged in an annular manner and having an angular difference of 0 degrees with respect to a plane parallel to the plane of the target 6 for the purpose of offsetting the control range of the magnetic field distribution near the upper surface of the target 6. The intermediate magnetic element 63 is the excitation direction (magnetic field distribution) of the first intermediate magnetic element 67 composed of an electromagnet.

20 is a vacuum container, 21 is an outer wall of the cathode portion,
22 is a water pipe that cools the target 6 and the inside of the cathode section; 23 is an insulator having a vacuum sealing function and an electrical insulation function that connects the cathode section to the vacuum container 20; 24;
25 is a current introduction terminal for supplying power to the anode ring 24 from a power source outside the vacuum vessel 20; 26 is an anode ring 24 provided for adjusting the plasma potential as needed; 27 is an insulator for electrically insulating and fixing the substrate 8; 27 is a substrate mounting means on which the substrate 8 is placed and cooled or heated to maintain a predetermined temperature; and 28 is a substrate mounting means electrically insulated from the vacuum container 20; An earth shield, 29 is an insulator having a vacuum sealing function and an electrical insulation function that connects the substrate mounting means 27 and the substrate earth shield 28, 30 is a mass flow control valve for introducing gas for sputtering, and 31 is a vacuum container. 20 is an exhaust device for evacuating the inside of 20; 40 is a sputtering high-voltage power supply that supplies high voltage to generate plasma for sputtering to the target 6 and the cathode; 41 is a power supply that supplies power to the anode ring 24 as necessary; be.

Further, 70 shown in FIG. 18 is a gate valve that connects or shuts off the vacuum chamber 20 for the film forming process and the vacuum chambers for pre- and post-processing as necessary, and 71 is a substrate 8.
80 is a substrate transport means for moving the substrate 8 relative to the target 6 and/or rotating and rotating as necessary during passing film formation or simultaneous double-sided film formation; A general control device 81 performs integrated control of a plurality of automatic film-forming control devices 81 provided, and a control device 81 controls the control of the vicinity of the upper surface of the target based on preset target life time, target erosion shape, film-forming speed, film pressure distribution, etc. A film forming process that sends a control signal to the intermediate magnetic element drive device 3 or the electromagnet excitation means 60 to automatically adjust the magnetic field distribution of the sputtering device, and also sends a signal to automatically adjust the output current or output power of the high voltage power source 40 for sputtering. It is an automatic control device. Note that the high voltage power source 40 for sputtering uses a DC power source or a high frequency power source and a high frequency matching device depending on the material of the target 6.

The entire apparatus of the first embodiment of the present invention shown in FIG. 1, which consists of the above main components, operates as follows. First, after placing the substrate 8 on the substrate mounting means 27, the inside of the vacuum container 20 is evacuated to a predetermined background (high vacuum) using the exhaust device 31, and at the same time, the temperature of the substrate mounting means 27 is controlled to remove the substrate. 8 at a predetermined temperature. Thereafter, argon gas for sputtering (not limited to this) is introduced through the mass flow control valve 30 and adjusted to a predetermined gas pressure. When power is supplied from the sputtering high-voltage power source 40 to the cathode outer wall 21 electrically connected to the target 6, high-density sputtering plasma 14 confined in the magnetic lines of force 11 is generated. The magnetic lines of force 11 are composed of permanent magnets in which the central magnetic pole 1 and the outer magnetic pole 2 have an angular difference of magnetization direction or orientation within ±60 degrees with respect to a plane parallel to the surface of the target 6, and are arranged in a ring shape.
In addition, since the position of the intermediate magnetic element 7, which is the magnetic field distribution adjustment means near the target top surface, is approximately at the center of the movement range, the target 6 The magnetic flux density component in the horizontal direction with respect to the surface exhibits bimodal characteristics, and the slope of the magnetic flux density component in the vertical direction is approximately zero between the center and the outer periphery. Therefore, the generation form and/or region of the high-density plasma 14 directly above and near the target 6, which contributes to sputtering, becomes wide. The argon gas ions in the plasma 14 are accelerated by cathode fall, collide with a wide range of the target 6, and knock out target atoms. The ejected target atoms are deposited on the surface of the substrate 8 and fulfill the function of sputtering film formation, and at the same time, erosion progresses over a wide range of the target 6. However, when the target 6 is thick, the distribution of the magnetic lines of force 11 that confines the high-density plasma 14 on the target 6 changes as the target 6 wears out, which affects the erosion width of the target 6. effect. On the other hand, when the position of the intermediate magnetic element 7, which is the magnetic field distribution adjusting means near the upper surface of the target 6, is adjusted in distance with respect to the surface of the target 6 by the intermediate magnetic element driving means 3 via the connecting drive shaft 4, the position directly above the target 6 is adjusted. In the range from the center to the outer circumference of the magnetic flux density distribution of the leakage magnetic field generated, the magnetic flux density component in the horizontal direction with respect to the six target surfaces can be adjusted from a single peak characteristic to a strong bimodal characteristic, and between the center and the outer circumference. Since the slope of the vertical magnetic flux density component can be controlled from positive to negative or from negative to positive approximately centered on zero, in order to avoid the above problem, the position of the intermediate magnetic element 7 can be adjusted as the target 6 wears out. By adjusting the distance from and near the surface of the target 6 using the intermediate magnetic element drive device 3, it is possible to adjust the erosion width to be the same even when the target 6 is worn out, and the target particles ejected by the sputtering phenomenon can be adjusted. There is very little change in the direction of scattering, making it possible to keep the thickness distribution of the film deposited on the substrate 8 constant. In addition, in a device that performs pass-through film formation with a rectangular cathode, changes in the scattering direction and/or scattering source position of target particles have almost no effect on the film thickness distribution deposited on the substrate, so the volume utilization rate of the target can be pursued primarily. . In this case, in conjunction with target consumption, the intermediate magnetic element 7, which is a magnetic field distribution adjustment means near the top surface of the target, is adjusted in distance relative to the surface of the target 6 by the intermediate magnetic element driving device 3, thereby increasing the depth of the target 6. The shape of the erosion can be controlled arbitrarily.

Although the substrate transport means, substrate lifting means, substrate rotation means, reactive sputtering gas introduction means, shutter, view port, vacuum gauge, etc. are not shown in FIG. 1, they may be used as necessary. is possible, and is not limited to the configuration shown in FIG.

FIGS. 2 to 4 show a first embodiment of the present invention with respect to the configuration shown in FIG. Taking as an example a circular target with a diameter of 8 inches, we show the outline of the cross-sectional structure of the cathode, the high-density plasma generated by it, and the erosion state of the target. The elements will be explained below, including differences from the conventional ones. The central magnetic pole 1 and the outer magnetic pole 2 shown in FIGS. 2 to 4 are permanent magnets whose magnetization directions have an angular difference of +45 degrees and -45 degrees (within ±60 degrees) with respect to a plane parallel to the surface of the target 6. The intermediate magnetic element 7, which is arranged in an annular shape and serves as a magnetic field distribution adjusting means near the upper surface of the target 6, is oriented at 0 degrees (±60 degrees) with respect to a plane parallel to the surface of the target 6.
Permanent magnets are arranged in an annular shape with an angular difference of less than 100 degrees, but in FIG. The lines of magnetic force 11 of the leakage magnetic field formed on the target 6 by the magnetic elements have a flattened tunnel shape compared to the conventional one shown in FIG. There is a wide range of areas to
The range of magnetron discharge due to orthogonal electromagnetic fields becomes wider. Therefore, the plasma 14 generated on the upper surface of the target 6
has a wide annular shape, which improves the utilization efficiency of the target 6.

In FIG. 3, the intermediate magnetic element 7, which is the magnetic field distribution adjustment means near the top surface of the target 6, is adjusted to the farthest position from the target 6 in the moving range, so that these magnetic elements are not formed on the target 6. Lines of magnetic force 11 of leakage magnetic field
has a more flattened tunnel shape than that shown in FIG. They are in a state where they are slightly separated, and the high-density plasma 14 due to magnetron discharge by the orthogonal electromagnetic field is slightly separated into the inner circumferential side and the outer circumferential side of the target 6, and the middle is connected by low-density plasma. Therefore, the erosion shape of the target 6 is approximately W-shaped as shown in the figure, and although the width of the erosion of the target 6 is the widest, the variation in the erosion depth in the depth direction is large, so if it is used in this state until the end of its life. As a result, the volume utilization is inferior to that shown in FIG.

In FIG. 4, the intermediate magnetic element 7, which is the magnetic field distribution adjustment means near the top surface of the target 6, is adjusted to the closest position to the target 6 in the moving range, so that these magnetic elements are not placed on the target 6. The magnetic lines of force 11 of the leakage magnetic field that are formed have a tunnel shape almost similar to the conventional one shown in FIG. Since the high-density plasma 14 is concentrated in the middle between
It is generated in a ring shape between the inside and outside of. Therefore, the erosion shape of the target 6 is approximately V-shaped as shown in the figure, and the width of the erosion of the target 6 is the narrowest.If the target 6 is used in this state until the end of its life, the result will be inferior to that shown in FIGS. 2 and 3.

If the present invention having the target erosion shape control function shown in FIGS. 2 to 4 is applied, even if the target 6 is thick, the height on the target 6 that changes as the target 6 wears out progresses. The distribution of the magnetic lines of force 11 confining the density plasma 14 is always kept constant by adjusting the position of the intermediate magnetic element 7 near and far from the surface of the target 6 using the intermediate magnetic element driving device 3, and the erosion width is kept constant until the target life. It can be controlled so that they are the same. In addition, in an apparatus that performs pass-through film formation with a rectangular cathode, changes in the scattering direction of target particles and/or the scattering source position have almost no effect on the film thickness distribution deposited on the substrate, so the volume utilization rate of the target 6 is mainly pursued. can. In this case, the position of the intermediate magnetic element 7, which is a magnetic field distribution adjusting means near the upper surface of the target 6, is adjusted in distance with respect to the surface of the target 6 by the intermediate magnetic element driving device 3 in conjunction with target consumption. The shape of erosion in the depth direction can be controlled arbitrarily.

FIGS. 5 to 7 show cases in which a non-magnetic target is used in the first embodiment of the present invention, respectively.
The horizontal magnetic flux density component and The figure showing the magnetic flux density component in the vertical direction shows the magnetic flux density distribution of the leakage magnetic field directly above the target 6, and the position of the intermediate magnetic element 7 is adjusted relative to the surface of the target 6 by the intermediate magnetic element driving device 3. The fact that the magnetic field distribution near the top surface of the device can be adjusted will be explained below.

5 to 7 respectively correspond to FIGS. 2 to 4, and shown in FIGS. 2 to 4, the lines of magnetic force emitted from the N pole of the permanent magnet, which is the central magnetic pole 1,
It is roughly divided into lines of magnetic force 11 that leak over a wide area at the top, and lines of magnetic force that draw a small loop toward the S pole of the permanent magnet of the central magnetic pole 1.
The magnetic lines of force 11 reach the S pole of the permanent magnet, which is the outer magnetic pole 2. In addition, lines of magnetic force that draw a small loop from the north pole of the permanent magnet, which is the outer magnetic pole 2, to the south pole of the permanent magnet are generated near the outer periphery of the target 6. On the other hand, N of the intermediate magnetic element 7 for adjusting the magnetic field distribution near the top surface of the target 6 made of a permanent magnet.
Lines of magnetic force that draw a loop from the pole to its own S pole are generated, and in particular, the lines of magnetic force on the target 6 side contribute to the leakage magnetic field distribution near the top surface of the target 6, and the intermediate magnetic element drive device 3 generates magnetic lines of force against the surface of the target 6. By adjusting the perspective, the above-mentioned contribution ratio changes. Therefore, in the range from the center to the outer periphery of the magnetic flux density distribution of the leakage magnetic field generated directly above the target 6 shown in FIGS. 5 to 7, the magnetic flux density component in the horizontal direction with respect to the target 6 surface changes from a single peak characteristic to a strong one. It is possible to adjust up to a bimodal characteristic, and the slope of the vertical magnetic flux density component between the center and the outer periphery can be controlled from positive to negative or from negative to positive with approximately zero as the center.

Note that the best volume utilization ratio of the target 6 is the leakage magnetic field distribution shown in FIG. The position of the intermediate magnetic element 7 is based on the plasma generation region and form, which vary depending on the leakage magnetic field distribution, discharge power, and/or sputtering gas pressure, etc., which vary depending on the material (particularly its magnetic permeability in the case of a magnetic material) and/or the state of wear of the target. need to be adjusted and corrected.

FIGS. 8 to 10 show a first embodiment of the present invention in which the intermediate magnetic element driving device 3 is adjusted to obtain the leakage magnetic field distribution near the top of the target 6 shown in FIGS. 5 to 7, respectively. , shows the corrosion state in the range from the center of the target to the outer periphery when oxygen-free copper with a diameter of 8 inches is used as the target 6 and is used until the end of its life. Figures 8 to 1
0, the eroded portion 15 of the target 6 can be controlled from a substantially W-shape as shown in the figure to a conventional substantially V-shape.

FIG. 11 shows a second embodiment of the present invention, in which, like the first embodiment, the generation form and/or region of the high-density plasma directly above the target that contributes to sputtering is wide, and the width of the region is adjustable. Using a circular target with a diameter of 8 inches as an example, we will show the outline of the cross-sectional structure of the cathode part and the high-density plasma generated by it, and mainly explain the excitation of the electromagnet, which is the intermediate magnetic element of the cathode part. The magnetic field distribution in the case of adjustment will be explained below, corresponding to FIGS. 12 to 14, and the target erosion form in this case will be explained below, corresponding to FIGS. 15 to 17. The central magnetic pole 1 and the outer magnetic pole 2 in FIG.
Permanent magnets whose magnetization directions have an angular difference of +45 degrees and -45 degrees (within ±60 degrees) with respect to a plane parallel to the plane of A first intermediate magnetic element 67 composed of an electromagnet such as a solenoid coil is arranged parallel to the surface of the target 6 and between the central magnetic pole 1 and the outer magnetic pole 2 on the back surface of the target 6, and near the top surface of the target 6. It is equipped with an electromagnet excitation means 60 having a function of supplying and adjusting the excitation current of the electromagnet, which is the magnetic element 67, in order to adjust the magnetic field distribution of the electromagnet. In order to offset the control range of the magnetic field distribution, a second intermediate magnetic element 68 is constructed of a permanent magnet arranged in an annular manner and whose orientation has an angular difference of 0 degrees with respect to a plane parallel to the target 6 surface. Equipped with

[0024] The output current of the electromagnet excitation means 60 is 0 [A]
Leakage magnetic field distribution near the top surface of target 6 when
The magnetic flux density distribution in the horizontal direction and the magnetic flux density component in the vertical direction with respect to the plane are shown in FIG.
The distribution is almost the same as that shown in FIG. 5 shown in the example, and the erosion form of the target 6 at this time (when 8 inches of oxygen-free copper is used with the same magnetic field distribution until the end of its life) is as shown in FIG. 1.
As shown in FIG. 5, the erosion shape is almost the same as that shown in FIG. 8 in the first embodiment described above.

The output current of the electromagnet excitation means 60 is -8.5
[A] (Current density to coil cross section = -6 [A/mm
2]), the excitation direction 63 is opposite to the illustrated direction and has the effect of canceling out the magnetic field formed by the second intermediate magnetic element 68, so the leakage magnetic field distribution near the top surface of the target 6 is as follows:
The distribution becomes as shown in FIG. 13, which is almost the same as that shown in FIG. This results in a substantially W-shaped erosion shape that is almost the same as that shown in FIG. 9 for the first embodiment.

The output current of the electromagnet excitation means 60 is +8.5
[A] (Current density to coil cross section = +6 [A/mm
2]), the excitation direction 63 is the same as the direction shown in the figure and has the effect of supplementing the magnetic field formed by the second intermediate magnetic element 68. Therefore, the leakage magnetic field distribution near the top surface of the target 6 is as shown in FIG. The distribution becomes almost the same as that shown in FIG. 7 in the first embodiment described above, and the erosion form of the target 6 at this time becomes as shown in FIG. 17, which is similar to that in the first embodiment described above. The erosion shape is approximately V-shaped, similar to that shown in FIG. 10.

In addition, for the purpose of reducing the excitation power of the electromagnet and/or for the purpose of giving an offset to the control range of the magnetic field distribution near the upper surface of the target 6, the orientation arranged in an annular manner is 0 with respect to the plane parallel to the plane of the target 6. The second intermediate magnetic element 68, which is made up of permanent magnets having an angular difference of degrees, can be used as necessary, and the offset of the control range of the magnetic distribution near the top surface of the target 6 is This can be adjusted by changing the residual magnetic flux density, cross-sectional area, orientation or magnetization direction, distance from the target, etc. of the permanent magnets constituting the intermediate magnetic element 68 of No. 2.

FIG. 18 is a diagram showing a third embodiment of the present invention, in which a rectangular cathode is used to form a thin film while the substrate 8 passes through a target 6 made of a film-forming substance. The film-forming process section describes an example in which the sputtering technology of the present invention is applied to simultaneous film-forming on both sides of a substrate 8, in which particles flying from targets 6 provided oppositely on the front and back sides of the substrate 8 are simultaneously deposited. FIG. 2 is a schematic cross-sectional view, which will be described in detail below.

Although not shown, the substrate 8 is subjected to a preparation process in which the substrate is loaded under atmospheric pressure, a vacuum evacuation process, a substrate degassing process in which heat or gas cooling is performed using an infrared ray or a halogen lamp under vacuum, and a substrate degassing process. After going through a temperature control process and the like, the gate valve 70 is driven, and the substrate is transported by the substrate transport means 71 to the vacuum chamber 20 for the film forming process. A mass flow control valve 30 and/or a valve valve (not shown) provided in a pipe connecting the exhaust device 31 and the vacuum container 20 are installed so that the desired sputtering gas pressure is always maintained in the vacuum container 20 for the film forming process. Automatically controlled by conductance valve. High-density plasma for sputtering 14
The target particles, which are the film-forming substances, are scattered from the pair of opposing targets 6 by the gas ions contained therein, and when the substrate 8 approaches the conveyance means 71, the target particles are scattered onto the substrate 8.
It is deposited on the surface and performs the function of sputtering film formation. The substrate 8 on which the sputtering film has been formed is transported to the rear process via the gate valve 70 on the rear side. As film formation continues on the substrate 8 which is repeatedly carried in and carried out, the target 6 wears out and the magnetic field distribution above the target 6 changes little by little. Even if the position of the intermediate magnetic element 7 is initially adjusted so that the magnetic field distribution is as shown in Fig. 5, the target 6 will only be worn out and the magnetic field distribution will approach the one shown in Fig. If the magnetic field distribution is to be kept the same up to the target 6, it is necessary to move the position of the intermediate magnetic element 7 in a direction closer to the target 6 using the intermediate magnetic element driving device 3 in conjunction with the wear and return to the magnetic field distribution as shown in FIG. be. In this example, in order to automatically perform such adjustment, the magnetic field distribution near the top surface of the target is automatically adjusted based on the target life time, target erosion shape, film formation speed, film thickness distribution, etc. that are set in advance. Film forming automatic control that sends a control signal to the intermediate magnetic element drive device 3 (or electromagnet excitation means 60) for adjustment and also sends a control signal to automatically adjust the output current or output power of the high voltage power source 40 for sputtering. A device 81 is provided for each cathode, and it also controls line speed, distribution of film forming speed between each cathode, target type, substrate type,
It is equipped with an integrated control device 80 that performs integrated control of a plurality of automatic film-forming control devices 81, which are provided in pairs on the left and right and/or for pass-through film formation, for settings such as film thickness, degree of vacuum, and gas introduction amount. .

[0030] In such an in-line device, target utilization rate and film formation speed are important, and if the present invention is applied, the volume utilization rate of the target 6 is approximately twice that of the conventional system, and the film formation speed immediately after the start of use is increased. Approximately 1.5 times the speed, and approximately 3 times or more the film formation speed just before the end of life (however, the film formation speed is based on the same discharge power per area of the cathode drop between the plasma 14 and the target 6). performance). In the case of simultaneous film formation on both sides, the cathode parts on which the targets 6 are placed are placed opposite each other, but they do not need to be strictly parallel, and in order to correct the thickness distribution of the thin film deposited on the substrate 8, Depending on the direction of movement and the direction of rotation and revolution, they may be arranged at some angle. In addition, in pass-through deposition technology (including simultaneous deposition on both sides), multiple targets are placed that correspond to each layer (or the same target in the case of increasing deposition speed) for the purpose of multilayer coating or increasing deposition speed. The cathode of is arranged with respect to the moving direction of the substrate 8,
The present invention can also be applied to such cases.

In the third embodiment of the present invention, the target 6
In the above description, the center of the substrate 8 moves relative to the center of the substrate 8, but it does not need to move, and the shape of the cathode part is not limited to a rectangle but can also be circular or oval. A film-like substrate transferred by a conveyance means, a substrate placed on a rotating drum called a carousel, a single or multiple substrates placed on a conveyance means parallel to the target surface, etc. It can also be applied to simultaneous deposition on one or both sides, as shown in Figure 1.
It is not limited to 8.

FIG. 19 shows a third embodiment of the present invention,
A rectangular cathode having the cross-sectional structure shown in FIG. 18 is used as the target 6 using 8 x 69 inch oxygen-free copper, and the position of the intermediate magnetic element 7, which is a magnetic field distribution adjustment means near the top surface of the target 6, is maintained until the end of its life. Intermediate magnetic element drive device 3
It shows the erosion state in the range from the target center to the outer periphery in the short side direction when used after making various adjustments.
The erosion depth is 1/3 of the initial target thickness.
Until reaching 2, the intermediate magnetic element 7 is used at approximately the middle of the movement range (the state of magnetic field distribution shown in FIG. 5).
/3, the position of the intermediate magnetic element 7 is used closest to the target 6 (state of magnetic field distribution shown in FIG. 7), and until the end of the life, the position of the intermediate magnetic element 7 is used closest to the target 6. This is an example when the magnetic field is used away from 6 (the state of magnetic field distribution shown in FIG. 6). In this type of apparatus that performs pass-through film formation using a rectangular cathode, changes in the scattering direction of target particles and/or the scattering source position have almost no effect on the film thickness distribution deposited on the substrate, so the volume utilization rate of the target 6 is mainly controlled. I can pursue it. In this case, the depth of the target 6 is adjusted by adjusting the position of the intermediate magnetic element 7, which is a magnetic field distribution adjusting means near the upper surface of the target 6, relative to the surface of the target 6 by the intermediate magnetic element driving device 3 in conjunction with target consumption. The shape of erosion in the horizontal direction can be controlled arbitrarily.

Similarly, adjustment is performed by an electromagnetic excitation means 60 which supplies an excitation current to an intermediate magnetic element 67 constituted by an electromagnet such as a solenoid coil as means for adjusting the magnetic field distribution in the vicinity of the upper surface of the target 6 in conjunction with the target consumption. This makes it possible to arbitrarily adjust the erosion shape of the target 6 in the depth direction.

In addition, in order to automatically adjust the magnetic field distribution near the upper surface of the target 6, a control signal is sent to the intermediate magnetic element drive device 3 (or electromagnet excitation means 60), and the output current or output power of the high voltage power source 40 for sputtering is Film deposition automatic control device 8 that sends control signals for automatic adjustment of
1, it is possible to automatically control a preset target erosion shape, and even a complicated control pattern can be accurately controlled up to the target life.

FIGS. 20 to 22 are schematic cross-sectional views of cathode portions showing fourth to sixth embodiments of the present invention.

FIG. 20 shows a fourth embodiment of the present invention,
The central magnetic pole 1 and the outer magnetic pole 2 are oriented at +45 degrees and −45 degrees (±60 degrees, respectively) with respect to a plane parallel to the surface of the target 6.
Permanent magnets having an angular difference (within 10 degrees) are arranged in a ring shape, and an intermediate magnetic element 67 composed of an electromagnet such as a solenoid coil is arranged parallel to the surface of the target 6 and serves as a magnetic field distribution adjustment means near the top surface of the target 6. It is arranged between the central magnetic pole 1 and the outer magnetic pole 2 on the back surface of the target 6, and has the function of supplying and adjusting the excitation current of the electromagnet, which is the intermediate magnetic element 67, in order to adjust the magnetic field distribution near the top surface of the target 6. An electromagnetic excitation means 60 is provided.

FIG. 21 shows a fifth embodiment of the present invention,
The central magnetic pole 1 and the outer magnetic pole 2 are arranged in an annular manner with permanent magnets having an angular difference of 0 degrees (within ±60 degrees) with respect to a plane parallel to the surface of the target 6, and near the top surface of the target 6. As a magnetic field distribution adjustment means, there is an intermediate magnetic element 7 in which permanent magnets having an angular difference of 0 degrees (within ±60 degrees) are arranged with respect to a plane parallel to the surface of the target 6 and are mechanically driven. The intermediate magnetic element drive device 3 and the connecting drive shaft 4 are provided.

FIG. 22 shows a sixth embodiment of the present invention,
The central magnetic pole 1 and the outer magnetic pole 2 are a combination of a plurality of small pieces of permanent magnets having an angular difference of 0 degrees (within ±60 degrees) in magnetization direction or orientation with respect to a plane parallel to the surface of the target 6 and arranged in an annular shape. In addition, as a means for adjusting the magnetic field distribution near the upper surface of the target 6, an intermediate magnetic element is provided in which permanent magnets having an angular difference of 0 degrees (within ±60 degrees) in orientation with respect to a plane parallel to the surface of the target 6 are arranged in an annular manner. 7, an intermediate magnetic element drive device 3 that mechanically drives this, and a connecting drive shaft 4
Equipped with:

Note that the polarity of the N pole and S pole of each permanent magnet and the electromagnet shown in the first to sixth embodiments of the present invention shown in FIGS. 1 to 5, FIG. 18 and FIGS. 20 to 22 described above are The same effect can be obtained even if the excitation direction is completely reversed. Further, each permanent magnet may be either a magnetized integrally molded annular or elliptical product, or a collection of small piece magnets in an annular or elliptical shape.

[0040]

As explained above, according to the present invention, the magnetization direction or orientation of at least two sets of magnetic elements of the magnetic device provided near the cathode portion for sputtering is ± with respect to a plane parallel to the target surface. Consisting of permanent magnets having an angular difference within 60 degrees, one of which is arranged in a ring near the center of the target, and the other arranged in a ring near the outer periphery of the target,
And the magnetism of the N or S poles of the permanent magnets constituting this magnetic element are all on the same side toward the center line shared by each magnetic element and/or the plane formed by a series of center lines, and the upper surface of the target At least one set of magnetic elements equipped with nearby magnetic field distribution adjustment means is arranged in an annular manner between the center and the outer periphery of the back surface of the target, and by adjusting the intermediate magnetic element serving as the magnetic field distribution adjustment means, the surface directly above the target can be adjusted. In the range from the center to the outer circumference of the magnetic flux density distribution of the leakage magnetic field, the magnetic flux density component in the horizontal direction with respect to the target surface can be adjusted from a single peak characteristic to a strong bimodal characteristic, and in the vertical direction between the center and the outer circumference. Since the slope of the magnetic flux density component of can be controlled from positive to negative or from negative to positive approximately centered on zero,
Even when the target thickness is thick, by adjusting the intermediate magnetic element in conjunction with the progress of target wear, the erosion width can be adjusted to remain the same even if the target wear progresses, and the sputtering phenomenon can be prevented. An extremely excellent effect can be obtained in that it is possible to provide a sputtering method and a sputtering apparatus that can maintain a constant film thickness distribution deposited on a substrate with extremely little change in the scattering direction of the target particles ejected by the sputtering method. Furthermore, according to the present invention, when applied to a sputtering technique such as pass-through film formation using a rectangular cathode, changes in the scattering direction of target particles and/or the scattering source position have almost no effect on the film thickness distribution deposited on the substrate. The extremely excellent effect of providing a sputtering method and apparatus that can arbitrarily control the erosion shape in the depth direction of the target by adjusting the intermediate magnetic element, which is a magnetic field distribution adjustment means near the top surface of the target, in conjunction with target consumption, has been achieved. It will be done.

[Brief explanation of the drawing]

FIG. 1 is a schematic sectional view of the entire device showing the configuration of a first embodiment of the present invention.

[Fig. 2] A schematic cross section of the cathode section showing the generation form of high-density plasma and the state of target erosion when the position of the intermediate magnetic element, which is a magnetic field distribution adjustment means near the upper surface of the target, is adjusted to approximately the center of the movement range. It is a diagram.

[Fig. 3] Cathode section showing the generation form of high-density plasma and the state of target erosion when the position of the intermediate magnetic element, which is the magnetic field distribution adjusting means near the upper surface of the target, is adjusted to a position away from the target in the moving range. FIG.

[Fig. 4] A cathode showing the generation form of high-density plasma and the state of target erosion when the position of the intermediate magnetic element, which is the magnetic field distribution adjustment means near the upper surface of the target, is adjusted to the position closest to the target in the moving range. FIG.

FIG. 5 shows the leakage magnetic field from the center of the surface directly above the target to the outer periphery when adjusting the magnetic device and magnetic distribution adjustment means disposed inside the cathode part having the cross-sectional structure shown in FIG. 2 in the first embodiment. FIG. 3 is a diagram showing a horizontal magnetic flux density component and a vertical magnetic flux density component with respect to a target surface in a range.

FIG. 6 shows the leakage magnetic field from the center of the surface directly above the target to the outer periphery when adjusting the magnetic device and magnetic distribution adjustment means disposed inside the cathode part having the cross-sectional structure shown in FIG. 3 in the first embodiment. FIG. 3 is a diagram showing a horizontal magnetic flux density component and a vertical magnetic flux density component with respect to a target surface in a range.

FIG. 7 shows the leakage magnetic field from the center of the surface directly above the target to the outer periphery when adjusting the magnetic device and magnetic distribution adjustment means disposed inside the cathode part having the cross-sectional structure shown in FIG. 4 in the first embodiment. FIG. 3 is a diagram showing a horizontal magnetic flux density component and a vertical magnetic flux density component with respect to a target surface in a range.

[Fig. 8] Corrosion in the range from the center of the target to the outer periphery when oxygen-free copper with a diameter of 8 inches is used as the target for the cathode having the cross-sectional structure shown in Fig. 2 in the first embodiment and is used until the end of its life. It is a sectional view showing a state.

FIG. 9: Corrosion in the range from the center of the target to the outer periphery when oxygen-free copper with a diameter of 8 inches is used as the target for the cathode having the cross-sectional structure shown in FIG. 3 in the first embodiment and is used until the end of its life. It is a sectional view showing a state.

FIG. 10 shows the graph from the center of the target to the outer periphery when oxygen-free copper with a diameter of 8 inches is used as the target in the first embodiment of the present invention and the cathode has the cross-sectional structure shown in FIG. It is a sectional view showing the state of erosion in the area.

FIG. 11 is a schematic cross-sectional view of a cathode section showing a second embodiment of the present invention.

FIG. 12 shows leakage magnetic field from the center of the surface directly above the target to the outer periphery when adjusting the magnetic device and magnetic distribution adjustment means disposed inside the cathode having the cross-sectional structure shown in FIG. 11 in the second embodiment; FIG. 3 is a diagram showing a horizontal magnetic flux density component and a vertical magnetic flux density component with respect to a target surface over a range.

FIG. 13 shows leakage magnetic field from the center of the surface directly above the target to the outer periphery when adjusting the magnetic device and magnetic distribution adjustment means disposed inside the cathode having the cross-sectional structure shown in FIG. 11 in the second embodiment; FIG. 3 is a diagram showing a horizontal magnetic flux density component and a vertical magnetic flux density component with respect to a target surface in a range.

FIG. 14 shows leakage magnetic field from the center of the surface directly above the target to the outer periphery when adjusting the magnetic device and magnetic distribution adjustment means disposed inside the cathode having the cross-sectional structure shown in FIG. 11 in the second embodiment; FIG. 3 is a diagram showing a horizontal magnetic flux density component and a vertical magnetic flux density component with respect to a target surface in a range.

FIG. 15: In the second embodiment, the magnetic field distribution adjusting means is adjusted so that the leakage magnetic field distribution near the top surface of the target is as shown in FIG. FIG. 4 is a cross-sectional view showing the state of erosion in the range from the center of the target to the outer periphery when the target is eroded.

FIG. 16: In the second embodiment, the magnetic field distribution adjusting means is adjusted so that the leakage magnetic field distribution near the top surface of the target is as shown in FIG. 13, and oxygen-free copper with a diameter of 8 inches is used as a target and used until the end of its life. FIG. 4 is a cross-sectional view showing the state of erosion in the range from the center of the target to the outer periphery when the target is eroded.

FIG. 17: In the second embodiment, the magnetic field distribution adjusting means is adjusted so that the leakage magnetic field distribution near the top surface of the target is obtained as shown in FIG. 14, and oxygen-free copper with a diameter of 8 inches is used as a target and used until its life. FIG. 4 is a cross-sectional view showing the state of erosion in the range from the center of the target to the outer periphery when the target is eroded.

FIG. 18 is a schematic cross-sectional view of the cathode portion of the entire device showing the configuration of a third embodiment of the present invention.

[Fig. 19] A case where a rectangular cathode having the cross-sectional structure shown in Fig. 18 is used with 8 x 69-inch oxygen-free copper as a target, and the magnetic field distribution adjustment means near the top surface of the target is adjusted in various ways until the end of its life. FIG. 2 is a cross-sectional view showing the state of erosion in the range from the center of the target to the outer periphery in the short side direction.

FIG. 20 is a schematic cross-sectional view of a cathode section showing a fourth embodiment of the present invention.

FIG. 21 is a schematic cross-sectional view of a cathode section showing a fifth embodiment of the present invention.

FIG. 22 is a schematic cross-sectional view of a cathode section showing a sixth embodiment of the present invention.

FIG. 23 is a sectional view showing the overall configuration of a conventional device.

FIG. 24 is a schematic cross-sectional view showing the configuration of a conventional cathode section.

25] Magnetic flux density in the horizontal direction with respect to the target surface in the range from the center of the surface directly above the target to the outer periphery of the leakage magnetic field generated by the magnetic device placed inside the cathode section having the cross-sectional structure shown in FIG. It is a figure which shows a magnetic flux density component and a perpendicular direction magnetic flux density component.

FIG. 26 shows the conventional corrosion state in the range from the target center to the outer periphery when oxygen-free copper with a diameter of 8 inches is used as a target in the cathode part having the cross-sectional structure shown in FIG. 24 and is used until the end of its life. FIG.

[Explanation of symbols]

1 Central magnetic pole 2 Outer magnetic pole 3. Intermediate magnetic element drive device 4 Connected drive shaft 5 Soft magnetic yoke 6 Target 7. Intermediate magnetic element of permanent magnet 8　　　　Substrate 11. Lines of magnetic force 14 Plasma 15　　　　Eroded part of the target 20 Vacuum container 21 Cathode part outer wall 22 Water piping 23 Insulator 24 Anode ring 25 Current introduction terminal 26 Insulator 27 Substrate mounting means 28　　　　　　Earth shield for board 29 Insulator 30 Mass flow control valve 31　　　　Exhaust system 40 High voltage power supply for sputtering 41 Power supply 60 Electromagnet excitation means 61 Current introduction terminal 63　　　　　Magnetic field lines 67 First intermediate magnetic element 68 Second intermediate magnetic element 70 Gate valve 71　　　　　Substrate transport means 80 General control device 81 Automatic film deposition control device

Claims (2)

[Claims] 1. Substrate mounting means for holding or moving one or more substrates relative to a cathode part;
comprising a target disposed opposite the deposition surface of the substrate at a predetermined distance, and a magnetic device on which the target is placed and generates a magnetic field near the front surface of the target,
The magnetic device includes at least two sets of magnetic elements having a magnetization direction or orientation of ±60 with respect to a plane parallel to the target surface.
composed of permanent magnets having an angular difference within degrees, one of the permanent magnets being arranged in a ring shape near the center of the target,
The other of the permanent magnets is arranged in an annular manner near the outer periphery of the target, and the N of the permanent magnets forming the magnetic elements faces toward the center line shared by each of the magnetic elements and/or a plane formed by a series of center lines. The polarity of the poles or S poles are all on the same side, and at least one set of intermediate magnetic elements is arranged between the center and the outer periphery of the back surface of the target to adjust the magnetic field distribution near the front surface of the target. Sputtering method. 2. Substrate mounting means for holding or moving one or more substrates relative to the cathode part;
A sputtering apparatus comprising a target disposed facing the deposition surface of the substrate at a predetermined distance, and a magnetic device on which the target is placed and generates a magnetic field near the front surface of the target, the magnetic device comprising: At least two sets of magnetic elements are composed of permanent magnets whose magnetization directions or orientations have an angular difference within ±60 degrees with respect to a plane parallel to the target surface, and one of the permanent magnets is arranged in an annular shape near the center of the target. and the other of the permanent magnets is arranged in a ring shape near the outer periphery of the target, and the magnetic elements are configured to face a center line shared by each of the magnetic elements and/or a plane formed by a series of center lines. Place the N pole or S pole of the permanent magnet on the same side,
At least one set of intermediate magnetic elements disposed between the center and the outer periphery of the target back surface, and intermediate magnetic element driving means for adjusting the intermediate magnetic element toward or away from the target front surface. Characteristic sputtering equipment.