JPH04235277A - Method and apparatus for sputtering - Google Patents

Abstract

PURPOSE:To improve utilizing efficiency of a target material by setting a magnetic elements for magnetron sputtering in annular-state to center and outer periphery of the target and making all polarities to the same side. CONSTITUTION:At least two sets of the magnetic elements in magnetic apparatus are constituted with permanent magnets having angle difference of within + or -60 deg. in the magnetizing direction or orientation to parallel face with target face 6. Then, these are set as the annular-state near the center and near the outer periphery of target 6 and all polarities of N pole or S pole in the permanent magnets constituting each magnetic element, are made to the same side to execute sputtering. By this method, high density plasma generating range near just above the target is widened, and the utilizing efficiency of target material is improved.

Description

[Detailed description of the invention]

0001

[Field of Industrial Application] The present invention relates to a method and apparatus for forming a thin film using glow discharge, and in particular to a magnetron sputtering technique that is highly efficient in the use of a target material, which is a film-forming substance and can be said to be the raw material for a thin film. be.

0002

2. Description of the Related Art Magnetron sputtering technology, also called low-temperature high-speed sputtering, is widely used because it has many advantages over previous bipolar sputtering and the like. The feature of this technology is that it uses so-called magnetron discharge, in which electric and magnetic fields are orthogonal, to generate high-density plasma near the target.

FIGS. 8 to 11 illustrate a sputtering method and apparatus having a circular planar magnetron sputtering cathode with a diameter of 8 inches as an example of the prior art. FIG. 8 shows the main structure, and FIG. 9 shows the structure of the cathode section. The outline of the cross-sectional structure, the high-density plasma generated thereby, and the erosion state of the target are shown. The magnetic flux density distribution of the leakage magnetic field directly above the target is shown in a diagram showing the magnetic flux density component in the horizontal direction and the magnetic flux density component in the vertical direction with respect to the target surface in the range from the center of the surface directly above to the outer periphery. 9 shows the state of corrosion in the range from the center of the target to the outer periphery when oxygen-free copper with a diameter of 8 inches is used as a target for the cathode having the cross-sectional structure shown in FIG. 9 and is used until the end of its life.

In FIGS. 8 to 11, 1 is a central magnetic pole made of a permanent magnet, 2 is an outer circumferential magnetic pole made of a permanent magnet,
4 is a yoke made of a soft magnetic material that magnetically couples the central magnetic pole 1 and the outer circumferential magnetic pole 2; 6 is a target made of a film-forming material;
8 is a substrate, 11 is a schematic diagram of tunnel-shaped lines of magnetic force formed by the magnetic circuit between the central magnetic pole 1 and the outer magnetic pole 2, 14
15 is a schematic cross-sectional view of an annular plasma confined by tunnel-shaped magnetic lines of force 11, 15 is a schematic cross-sectional view showing a portion of the target 6 eroded by the collision of sputtering gas ions in the plasma 14, 20 is a vacuum container, and 21 is an outer wall of the cathode section, 22 is a water pipe that cools the target 6 and the inside of the cathode, 23 is an insulator having a vacuum sealing function and an electrical insulation function for connecting the cathode section to a vacuum container, and 24 is a plasma potential as required. 25 is a current introduction terminal for supplying power to the anode ring from a power source outside the vacuum vessel, and 26 is an insulator for electrically insulating and fixing the anode ring from the vacuum vessel. 27 is a substrate mounting means on which the substrate 8 is mounted and is cooled or heated to maintain a predetermined temperature and is electrically insulated from the vacuum container 20; 28 is a ground shield for the substrate; 29 is the substrate mounting means 27; An insulator having a vacuum sealing function and an electrical insulation function for connecting the substrate earth shield 28, 30 a mass flow control valve for introducing gas for sputtering, 31 an exhaust device for evacuating the inside of the vacuum container 20, 40 Reference numeral 41 indicates a high voltage power source for sputtering that supplies high voltage to the target 6 and the cathode portion to generate plasma for sputtering, and 41 indicates a power source that supplies power to the anode ring as required.

[0005]

[Problems to be Solved by the Invention] Magnetron discharge using orthogonal electromagnetic fields, which is a feature of magnetron sputtering technology, ionizes gas molecules for sputtering due to the leakage magnetic field directly above the target created by the magnetic element installed near the cathode. electrons or secondary electrons generated by the sputtering phenomenon are converged, increasing the probability of collision between these electrons and sputtering gas molecules, increasing the plasma density. ) has been significantly improved compared to previous methods such as two-pole sputtering.

On the other hand, as shown in FIGS. 9 to 11, the erosion state of the target (the state in which the target material is knocked out and consumed by sputtering) is most severe directly under the high-density plasma converged by the leakage magnetic field. In particular, in the magnetic flux density distribution in the range from the center of the surface directly above the target to the outer periphery, the horizontal magnetic flux density component with respect to the target surface has almost the maximum value, and the magnetic flux density component in the vertical direction between the center and the outer periphery At a position where the component changes from positive to negative or from negative to positive, the target material is significantly consumed as the magnetron discharge continues and erosion progresses (as the film formation time progresses).

[0007] Therefore, the cross-sectional shape of the target at the end of its life takes an approximately V-shaped erosion form, as shown in Fig. 11, and its volume utilization rate is approximately 20%. This was a particular problem when forming films using

Furthermore, as the approximately V-shaped erosion progresses, the scattering direction of the target particles ejected by the sputtering phenomenon changes, so when the target wears out, the thickness distribution of the film deposited on the substrate changes. It was difficult to keep it constant.

The present invention relates to a magnetron sputtering film formation technology that enables low-temperature, high-speed film formation, as described above, and in particular to a magnetron sputtering method and apparatus that have high utilization efficiency of a target material made of a film-forming substance that can be considered as a raw material for thin films. Our goal is to provide the following.

0010

[Means for solving the problem] The above object is to provide a structure in which a target can be placed and a voltage can be applied, and a magnetic device is placed near a cathode portion having a cooling function. Regarding the generated magnetic field, in the magnetic flux density distribution in the range from the center of the surface directly above the target to the outer periphery, the magnetic flux density distribution in the horizontal direction with respect to the target surface exhibits a bimodal characteristic, and the magnetic flux density distribution in the vertical direction between the center and the outer periphery shows bimodal characteristics. At least two sets of magnetic elements of the magnetic device are made of permanent magnets whose magnetization directions or orientations have an angular difference within ±60 degrees with respect to a plane parallel to the target surface so that the slope of the magnetic flux density component is approximately zero. One is arranged in an annular shape (or elliptical shape or racetrack shape) near the target center, the other is arranged in an annular shape (or elliptical shape or racetrack shape) near the outer periphery of the target, and each magnetic The magnetic elements (at least two magnetic elements arranged in a ring shape, an ellipse shape, or a racetrack shape near the center of the target and near the outer periphery) are directed toward the center line shared by the elements and/or a plane formed by a series of center lines. The polarity of the N or S poles of the permanent magnets constituting the magnetic elements of the set are all on the same side, and the form of generation of high-density plasma directly above the target that contributes to sputtering and/or in a wide area. This is achieved by forming a film.

[0011]

[Operation] Regarding the magnetic device installed near the cathode part for sputtering (a structure that can place a target made of a film-forming material, cool it, and apply a discharge voltage for plasma generation), at least Two sets of magnetic elements are composed of permanent magnets whose magnetization directions or orientations have an angular difference within ±60 degrees with respect to a plane parallel to the target surface, and one set is annular (or elliptical, or one in a racetrack shape) and the other in an annular (or elliptical or racetrack shape) near the outer periphery of the target.
And, the magnetic element (
At least two sets of magnetic elements arranged in an annular, elliptical, or racetrack shape near the center of the target and near the outer periphery of the permanent magnets are configured such that the polarity of the N or S poles of the permanent magnets are all on the same side. , in the range from the center to the outer circumference of the magnetic flux density distribution of the leakage magnetic field generated directly above the target by this magnetic device, the magnetic flux density component in the horizontal direction to the target surface exhibits bimodal characteristics, and The slope of the magnetic flux density component in the vertical direction becomes approximately zero between.

[0012] For this reason, the generation form and/or area of high-density plasma directly above the target that contributes to sputtering becomes wide, improving the utilization efficiency of the target material consisting of the film-forming substance, and reducing the consumption of the target. Even if the condition progresses, the erosion width hardly changes, so there is very little change in the scattering direction of the target particles ejected by the sputtering phenomenon, making it possible to maintain a constant thickness distribution of the film deposited on the substrate.

[0013]

[Example] Examples of the present invention are shown in FIGS. 1 to 4 and 5 to 4.
This will be explained below with reference to FIG. In FIGS. 1 to 7, 1 indicates the magnetization direction, or
A central magnetic pole made of a permanent magnet whose orientation has an angular difference within ±60 degrees, 2 is made of a permanent magnet whose magnetization direction or orientation has an angular difference within ±60 degrees with respect to a plane parallel to the surface of the target 6. 3 is an intermediate magnetic pole made of a permanent magnet whose magnetization direction or orientation has an angular difference within ±60 degrees with respect to a plane parallel to the surface of the target 6; 4 is a central magnetic pole 1 and an outer magnetic pole 2; A yoke made of a magnetically coupled soft magnetic material, 6 a target made of a film-forming material, 8 a substrate, 1
1 is a schematic diagram of the tunnel-shaped magnetic lines of force formed by the magnetic circuit between the central magnetic pole 1 and the outer magnetic pole 2; 14 is a schematic cross-sectional diagram of an annular plasma confined by the tunnel-shaped magnetic lines of force 11; 15 is a schematic diagram of the inside of the plasma 14. FIG. 3 is a schematic cross-sectional view showing a portion of the target 6 eroded by collision with sputtering gas ions.

20 is a vacuum container, 21 is an outer wall of the cathode portion,
22 is a water pipe for cooling the target 6 and the inside of the cathode, 23 is an insulator having a vacuum sealing function and an electrical insulation function for connecting the cathode part to a vacuum container, and 24 is for adjusting the plasma potential as necessary. The anode ring provided, 25 is a current introduction terminal for supplying power to the anode ring from a power source outside the vacuum vessel, 26 is an insulator for electrically insulating and fixing the anode ring to the vacuum vessel, and 27 is a substrate. 8, a substrate mounting means that is cooled or heated to maintain a predetermined temperature and is electrically insulated from the vacuum container 20; 28 is a ground shield for the substrate;
9 is an insulator having a vacuum sealing function and an electrical insulation function for connecting the substrate mounting means 27 and the substrate earth shield 28; 30 is a mass flow control valve for introducing sputtering gas; 31 is an insulator for connecting the substrate mounting means 27 and the substrate earth shield 28; An exhaust device 40 evacuates the inside; 40 is a sputtering high-voltage power source that supplies high voltage to the target 6 and the cathode portion to generate plasma for sputtering; 41 is a power source that supplies power to the anode ring as required.

Note that the high voltage power source 40 for sputtering uses a DC power source or a high frequency power source and a high frequency matching device depending on the material of the target.

The entire apparatus of the first embodiment of the present invention shown in FIG. 1, which consists of the above main components, operates as follows.

After placing the substrate 8 on the substrate mounting means 27,
The exhaust device 31 evacuates the inside of the vacuum container 20 to a predetermined background (high vacuum), and at the same time controls the temperature of the substrate mounting means 27 to maintain the substrate 8 at a predetermined temperature. Thereafter, argon gas for sputtering (not limited to this) is introduced through the mass flow control valve 30 and adjusted to a predetermined gas pressure.

When power is supplied from the high voltage power source 40 for sputtering to the outer wall 21 of the cathode section electrically connected to the target 6, high-density plasma 14 for sputtering confined in the lines of magnetic force 11 is generated. This line of magnetic force 11 is
The central magnetic pole 1 and the outer magnetic pole 2 are composed of permanent magnets whose magnetization directions or orientations have an angular difference within ±60 degrees with respect to a plane parallel to the surface of the target 6, and are arranged in an annular manner. In the range from the center to the outer periphery of the magnetic flux density distribution of the leakage magnetic field generated directly above the target surface, the horizontal magnetic flux density component with respect to the target surface exhibits bimodal characteristics, and the vertical direction between the center and the outer periphery shows bimodal characteristics. The slope of the magnetic flux density component becomes approximately zero.

For this reason, the high-density plasma 14 directly above the target 6, which contributes to sputtering, is generated in a wide manner and/or in a wide area. The argon gas ions in this high-density plasma 14 are accelerated by cathode fall and collide with a wide range of the target 6, knocking out target atoms. The ejected target atoms are deposited on the surface of the substrate 8 and function as a sputtering film, and at the same time, erosion progresses over a wide range of the target 6.

[0020] The above configuration and operation improve the utilization efficiency of the target material made of the film-forming substance, and the erosion width hardly changes even when the target wears out. Changes in the scattering direction of target particles are extremely small, making it possible to maintain a constant thickness distribution of the film deposited on the substrate.

Although the substrate transport means, substrate lifting means, substrate rotation means, reactive sputtering gas introducing means, shutter, view port, vacuum gauge, etc. are not shown in FIG. 1, they may be used as necessary. is possible, and is not limited to the configuration shown in FIG.

FIG. 2 shows the outline of the cross-sectional structure of the cathode part of the first embodiment of the present invention shown in FIG. 1, using a circular target with a diameter of 8 inches, and the height generated thereby. The density plasma and the erosion state of the target are shown below, and the differences from the prior art will be explained mainly regarding the magnetic elements of the cathode section.

The central magnetic pole 1 and the outer magnetic pole 2 are made of permanent magnets arranged in an annular manner with orientations of +45 degrees and −45 degrees (within ±60 degrees) relative to a plane parallel to the target 6. Therefore, the magnetic field lines 11 of the leakage magnetic field created by these magnetic elements on the target 6 have a flattened tunnel shape compared to the conventional technique shown in FIG.
The area where the electric field substantially perpendicular to the magnetic field 11 intersects at right angles with the substantially parallel magnetic lines 11 is wide, and the range of magnetron discharge due to the orthogonal electromagnetic field becomes wide. Therefore, the plasma 14 generated on the upper surface of the target 6 has a wide annular shape, an elliptical shape, or a racetrack shape, and the utilization efficiency of the target 6 is improved.

FIG. 3 shows a first embodiment of the present invention, in which a leakage magnetic field generated by a magnetic device disposed inside a cathode having the cross-sectional structure shown in FIG. 2 reaches from the center of the surface directly above the target 6 to the outer circumference. The magnetic flux density distribution of the leakage magnetic field directly above the target 6 is shown in a diagram showing the magnetic flux density component in the horizontal direction and the magnetic flux density component in the vertical direction with respect to the target surface in the range of the target surface, and the difference from the conventional technology will be explained below.

As shown in FIG. 2, the lines of magnetic force emitted from the north pole of the permanent magnet, which is the central magnetic pole 1, are divided into magnetic lines 11, which leak over a wide area on the target 6, and small lines of force, which are directed toward the south pole of the permanent magnet, which is the central magnetic pole 1. It is roughly divided into lines of magnetic force that draw a loop, and the line of magnetic force 11 reaches the S pole of the permanent magnet, which is the outer magnetic pole 2. Also, from the N pole of the permanent magnet, which is the outer magnetic pole 2, to its own S
Lines of magnetic force that draw a small loop toward the pole are generated near the outer periphery of the target 6.

In the magnetic flux density distribution in the range from the center of the surface directly above the target 6 to the outer periphery in FIG. 3, a bimodal characteristic of the magnetic flux density component in the horizontal direction to the target surface appears strongly, and The reason why the range in which the gradient of the vertical magnetic flux density component is approximately zero can be widened to about 40 mm is that the conventional technology mainly uses the magnetic lines of force 11 between the central magnetic pole 1 and the outer magnetic pole 2, whereas the central This is because the lines of magnetic force that draw a small loop from the N pole of each permanent magnet on the outer periphery to its own S pole are also actively used or made to act on the leakage magnetic field on the target 6. The permanent magnet, which is the outer magnetic pole, is tilted with respect to a plane parallel to the target surface so that the magnetization direction or orientation has an angular difference within ±60 degrees, and the center line shared by each magnetic element, and ，
Or, the magnetic elements (at least two magnetic elements arranged in an annular, elliptical, or racetrack shape near the center of the target and near the outer periphery) toward a plane formed by continuous center lines.
The polarities of the N or S poles of the permanent magnets constituting the set of magnetic elements are all on the same side.

FIG. 4 shows the center of the target in the first embodiment of the present invention in which oxygen-free copper with a diameter of 8 inches is used as the target 6 in a cathode having the cross-sectional structure shown in FIG. 2 and is used until the end of its life. It shows the state of erosion in the range from to the outer periphery. FIG. 4 of the present invention and FIG. 11 of the prior art
As is clear from the comparison of the erosion state of the target 6 shown in Fig. 2, the target utilization efficiency has been improved by about twice.

This is because in the conventional technology, in the magnetic flux density distribution in the range from the center of the surface directly above the target 6 to the outer periphery, the magnetic flux density component in the horizontal direction with respect to the target surface has approximately the maximum value, and the magnetic flux density component between the center and the outer periphery In contrast, the high-density plasma 14 (magnetron discharge due to orthogonal electromagnetic fields) that contributes to sputtering is concentrated at the position where the vertical magnetic flux density component changes from positive to negative or from negative to positive. According to the above-mentioned Figure 3, a strong bimodal characteristic of the magnetic flux density component in the horizontal direction with respect to the target surface appears, and
Since there is a wide range in which the slope of the vertical magnetic flux density component is approximately zero between the center and the outer periphery, the density distribution of the high-density plasma 14 is approximately uniform over a wide range, and the erosion of the target 6 progresses in this state. Because it does.

5 to 7 are schematic cross-sectional views of cathode portions showing second to fourth embodiments of the present invention.

FIG. 5 shows a second embodiment of the present invention, in which the central magnetic pole 1 and the outer magnetic pole 2 have magnetization directions of +45 degrees and -45 degrees (±60 degrees, respectively) with respect to a plane parallel to the surface of the target 6. (within)
It has a structure in which permanent magnets having an angular difference of It shows.

FIG. 6 shows a third embodiment of the present invention, in which the central magnetic pole 1 and the outer magnetic pole 2 have a magnetization direction or orientation of 0 degrees (within ±60 degrees) with respect to a plane parallel to the surface of the target 6. This is a structure in which permanent magnets with different angles are arranged in a ring shape, making assembly easier compared to the diagonal arrangement of permanent magnets, which are the components of the central and outer magnetic poles, as shown in the first embodiment. , in the magnetic flux density distribution in the range from the center of the surface directly above the target 6 to the outer periphery, the bimodal characteristic of the magnetic flux density component in the horizontal direction with respect to the target surface appears extremely strong. The intermediate magnetic poles 3 made of permanent magnets are arranged in a ring shape and corrected. Note that the same correction effect can be obtained by arranging a solenoid-shaped electromagnet between the central magnetic pole 1 and the outer circumferential magnetic pole 2 instead of arranging the intermediate magnetic pole 3 made of a permanent magnet in an annular shape.

FIG. 7 shows a fourth embodiment of the present invention, in which the central magnetic pole 1 and the outer magnetic pole 2 have a magnetization direction or orientation of 0 degrees (within ±60 degrees) with respect to a plane parallel to the surface of the target 6. A plurality of small pieces of permanent magnets having different angles are combined and arranged in a ring shape, and the same effect as that of the diagonal arrangement of permanent magnets, which are the components of the central and outer magnetic poles shown in the first embodiment, can be obtained. It shows the structure.

In the embodiments of the present invention, the center of the substrate 8 does not move relative to the center of the target 6, but it may move, and the shape of the cathode portion is not limited to a circle but may be an ellipse. It can also be applied to film-like substrates that are transported by means such as rolls, substrates that are placed on a rotating drum called a carousel, or rectangular shapes.
It can also be applied to the case where a film is simultaneously formed on one or both sides of one or more substrates placed on a transport means that is transported in parallel to the target surface, and is not limited to FIG. 1. Further, the target 6 and the substrate 8 do not need to be arranged completely parallel and facing each other, but may be arranged at a slight angle.

Note that the N pole of each permanent magnet shown in the first to fourth embodiments of the present invention shown in FIGS. 1, 2, and 5 to 7,
The same effect can be obtained even if the polarity of the S pole is completely reversed. Further, each permanent magnet may be either a magnetized integral molded article in the shape of a ring or an ellipse, or a magnet formed by collecting small piece magnets in the shape of a ring or an ellipse.

Furthermore, although FIGS. 1 and 2 show a yoke 4 made of a soft magnetic material that magnetically couples the central magnetic pole 1 and the outer magnetic pole 2, the residual magnetic flux density is approximately 1T as a permanent magnet. If a certain degree of rare earth magnet etc. is used,
Almost the same effect can be obtained even if the yoke is omitted.

[0036]

[Effects of the Invention] According to the present invention, a magnetic field is provided near the cathode section for sputtering (a structure on which a target made of a film-forming material can be placed and cooled, and on which a discharge voltage for plasma generation can be applied). Regarding the device, at least two sets of magnetic elements of the magnetic device are composed of permanent magnets whose magnetization directions or orientations have an angular difference within ±60 degrees with respect to a plane parallel to the target surface, and one of the magnetic elements is arranged near the center of the target. Annular (
The other magnetic elements are arranged in an annular shape (or an elliptical shape or a racetrack shape) near the outer periphery of the target, and the center lines shared by each magnetic element or the center lines are connected. The north pole or south pole of the permanent magnet that constitutes the magnetic element (at least two sets of magnetic elements arranged in an annular, elliptical, or racetrack shape near the center of the target and near the outer periphery) toward the plane of construction.
By setting the polarity of all the poles on the same side, the magnetic flux density component in the horizontal direction to the target surface exhibits bimodal characteristics in the range from the center to the outer periphery of the magnetic flux density distribution of the leakage magnetic field generated directly above the target. In addition, since the slope of the vertical magnetic flux density component between the center and the outer periphery is approximately zero, the generation form or region of high-density plasma directly above the target that contributes to sputtering is wide, and the formation of In addition, the erosion width hardly changes even when the target wears out, so there is very little change in the scattering direction of the target particles ejected by the sputtering phenomenon, and they do not accumulate on the substrate. It is possible to provide a sputtering method and apparatus that can maintain a constant film thickness distribution.

[Brief explanation of the drawing]

FIG. 1 is a schematic cross-sectional view of the entire device showing the configuration of a first embodiment of the present invention.

[Fig. 2] This is a partially enlarged view of Fig. 1 in the first embodiment of the present invention, and mainly shows the outline of the cross-sectional structure of the cathode part and the high-density plasma generated thereby and the erosion state of the target. FIG. 3 is a schematic cross-sectional view of a cathode section.

FIG. 3: In the first embodiment of the present invention, the range of the leakage magnetic field generated by the magnetic device placed inside the cathode section having the cross-sectional structure shown in FIG. 2 from the center of the surface directly above the target to the outer periphery. FIG. 2 is a diagram showing a magnetic flux density component in the horizontal direction and a magnetic flux density component in the vertical direction with respect to the target surface.

FIG. 4 is a schematic cross-sectional view showing the state of erosion in the range from the center of the target to the outer periphery of the cathode having the cross-sectional structure shown in FIG. 2 in the first embodiment of the present invention.

FIG. 5 is a schematic cross-sectional view of a cathode section showing a second embodiment of the present invention.

FIG. 6 is a schematic cross-sectional view of a cathode section showing a third embodiment of the present invention.

FIG. 7 is a schematic cross-sectional view of a cathode section showing a fourth embodiment of the present invention.

FIG. 8 is a schematic cross-sectional view of the entire device showing the main components of the prior art.

FIG. 9 is a schematic cross-sectional view of a conventional cathode section.

10: Magnetic flux density in the horizontal direction with respect to the target surface in the range from the center of the surface directly above the target to the outer periphery of the leakage magnetic field generated by the magnetic device placed inside the cathode part having the cross-sectional structure shown in FIG. FIG. 4 is a diagram showing magnetic flux density components and vertical magnetic flux density components.

11 is a schematic cross-sectional view showing the state of erosion according to the prior art in the range from the center of the target to the outer periphery of the cathode having the cross-sectional structure shown in FIG. 9; FIG.

[Explanation of symbols]

1 Central magnetic pole 2 Outer magnetic pole 3 Intermediate magnetic pole 4 Soft magnetic yoke 6 Target 8 Substrate 11 Schematic diagram of lines of magnetic force 14 Schematic cross-sectional diagram of plasma 15 Schematic cross-sectional diagram showing target erosion 20 Vacuum vessel 21 Cathode outer wall 22 Water piping 23, 26, 29 Insulator 24 Anode ring 25 Current introduction terminal 27 Substrate mounting means 28 Substrate earth shield 30 Mass flow control valve 31 Exhaust device 40 High voltage power source for sputtering 41 Power source

Claims (2)

[Claims] [Claim 1] Substrate mounting means for holding one or more substrates or for providing movement relative to a cathode part;
A target made of a film-forming material facing the deposition surface of the substrate at a predetermined distance, and a magnetic device located near a cathode section that has a structure on which the target can be placed and a voltage can be applied, and that has a cooling function. With regard to the magnetic field generated by the magnetic device, in the magnetic flux density distribution in the range from the center of the surface directly above the target to the outer periphery, the magnetic flux density component in the horizontal direction with respect to the target surface exhibits bimodal characteristics, and , the magnetization direction or orientation of at least two sets of magnetic elements of the magnetic device is set to ± with respect to a plane parallel to the target surface so that the gradient of the vertical magnetic flux density component between the center and the outer periphery is approximately zero.
It is composed of permanent magnets having an angular difference within 60 degrees, one of which is arranged in a ring near the center of the target, and the other arranged in a ring near the outer periphery of the target, and the center line or center line that is shared by each magnetic element is The N pole or S pole of the permanent magnet constituting the magnetic element faces toward the continuous plane.
A sputtering method characterized by using all poles with the same polarity and depositing a film in a wide state or in a wide area of high-density plasma generation directly above the target that contributes to sputtering. [Claim 2] Substrate mounting means for holding one or more substrates or for providing movement relative to the cathode part;
A target made of a film-forming material faces the deposition surface of the substrate at a predetermined distance, and a magnetic device is provided near a cathode portion that has a structure on which the target can be placed and a voltage can be applied, and has a cooling function. In the arrangement, at least two sets of magnetic elements of the magnetic device are composed of permanent magnets whose magnetization directions or orientations have an angular difference within ±60 degrees with respect to a plane parallel to the target surface, and one of the magnetic elements is arranged in the direction of the target. The magnetic elements are arranged in a ring shape near the center, and the other is arranged in a ring shape near the outer periphery of the target, and the magnetic elements are arranged toward a center line shared by each magnetic element or a plane formed by a series of center lines. A sputtering apparatus characterized in that the polarities of the N poles or S poles of the permanent magnets are all on the same side.