CN103374705A - Magnetron sputtering device - Google Patents
Magnetron sputtering device Download PDFInfo
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- CN103374705A CN103374705A CN2012101052150A CN201210105215A CN103374705A CN 103374705 A CN103374705 A CN 103374705A CN 2012101052150 A CN2012101052150 A CN 2012101052150A CN 201210105215 A CN201210105215 A CN 201210105215A CN 103374705 A CN103374705 A CN 103374705A
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Abstract
The invention provides a magnetron sputtering device. The device comprises a reaction chamber, a chuck and target materials. The chuck is arranged at the bottom of the reaction chamber and used to hold workpieces to be processed. The target materials are arranged at the top of the reaction chamber. Edge magnets are arranged at the outside of the side surface of the reaction chamber. The edge magnets are arranged above the chuck. Auxiliary magnets are arranged at the edge of the chuck. The magnetic pole of the auxiliary magnets and the magnetic pole of the edge magnets are arranged in the same direction. The auxiliary magnets and the edge magnets form a magnetic loop. Via the magnetic loop, metal irons in plasma are moved toward the edge zone of the reaction chamber to increase the deposition amount of the target material particles on the edge zone of the workpieces to be processed. The magnetron sputtering device can increase deposition amount of the edge zone of the workpieces to be processed and therefore the uniformity of film thickness can be raised.
Description
Technical field
The invention belongs to the microelectronic processing technique field, be specifically related to a kind of magnetic control sputtering device.
Background technology
Magnetic control sputtering device is widely used in the processing of unicircuit.Fig. 1 is the structure diagram of typical magnetic control sputtering device.See also Fig. 1, magnetic control sputtering device mainly comprises reaction chamber 1, vacuum system 2, chuck 5, target 6, airing system 7, magnetron 3 and the motor 4 that is used for driving magnetron motion.Wherein, chuck 5 is arranged on the bottom of reaction cavity 1, is used for carrying workpiece to be machined 8.Target 6 is arranged on the top of reaction cavity 1, and is connected with the direct supply (not shown) that is arranged on reaction chamber 1 outside, and direct supply provides bias voltage to target 6.Magnetron 3 is arranged on the top of target 6, and scans the surface of target 6 under the driving of motor 4, thereby plasma body 10 is gathered in the below of target 6.Vacuum system 2 is used for making reaction chamber 1 to keep the required vacuum tightness of technique.Airing system provides implementing process required process gas to reaction chamber 1 inside, such as argon gas or nitrogen etc.
During this magnetic control sputtering device operation, the bias voltage that is applied to target 6 makes its cavity 1 with respect to ground connection be negative pressure, positive ion in the plasma body of process gas discharge generation is subjected to the surface of the attraction bombardment target 6 of negative pressure, the atoms metal on target 6 surfaces is overflowed and be deposited on the surface of workpiece to be machined 8, thereby form film on the surface of workpiece to be machined 8.Become normal distribution owing to be deposited on the metal ion on the surface of workpiece to be machined 8 along the diameter of workpiece to be machined, cause being deposited on film thick middle, the thin edge on workpiece to be machined surface, this directly affects reliability and the consistence of product.
For this reason, the relevant technical staff in the field has proposed a kind of improved magnetic control sputtering device.Fig. 2 is the structure diagram of improved magnetic control sputtering device.See also Fig. 2, the magnetron 3 in the improved magnetic control sputtering device is the Nonequilibrium magnetic keyholed back plate, and sets up limit magnet 9 in the outside of reaction chamber 1 sidewall, and the setting party of the magnetic pole of limit magnet 9 and the magnetic pole of the outer magnetic pole 3a of magnetron 3 is to identical.In addition, improved magnetic control sputtering device is identical with the structure of typical magnetic control sputtering device.In technological process, the Nonequilibrium magnetic keyholed back plate is when scanning target 6, its outer magnetic pole 3a produces unnecessary magnetic line of force (can't form with internal magnetic pole 3b the part magnetic line of force of magnetic loop) can form magnetic loop 7 with limit magnet 9, electronics in the plasma body is subjected to the constraint of this magnetic loop 7, can increase the electron density at reaction chamber 1 edge, move thereby make by the edge of the target metal ion of sputter to reaction chamber 1, this will increase the deposition of target at workpiece to be machined 8 edges and increase, and then improve the thickness evenness of film.
But, in actual use, owing to limit magnet 9 and the magnetic loop that magnetron 3 produces rotate with the rotation of magnetron 3, so that the metal ion density upper zone is in continuous variation.In fact, improved magnetic control sputtering device is the deposition that dynamically increases the workpiece to be machined edge.When the thinner film of needs, still there is the situation of thick middle, thin edge in the film on workpiece to be machined surface.
And, the magnetic loop Distribution of Magnetic Field that limit magnet 9 and magnetron 3 produce is inhomogeneous, on the vertical direction of reaction chamber 1, magneticstrength near target 6 one sides is stronger, near the magneticstrength of limit magnet 9 one sides a little less than, this is so that less near the density of the target metal ion at reaction chamber 1 edge, thereby affects the homogeneity of film thickness.
Summary of the invention
For one of solving the problems of the technologies described above, the invention provides a kind of magnetic control sputtering device, it can increase the density of the target metal ion of reaction chamber fringe region, thereby improves the homogeneity of film thickness.
The technical scheme that adopts that solves the problems of the technologies described above provides a kind of magnetic control sputtering device, comprise reaction chamber, chuck and target, described chuck is arranged on described reaction chamber bottom, it is used for the carrying workpiece to be machined, described target is arranged on described reaction chamber top, be provided with the limit magnet in the outside of described reaction chamber sidewall, and described limit magnet is positioned at the top of described chuck, edge at described chuck comprises auxiliary magnet, the magnetic pole of the magnetic pole of described auxiliary magnet and described limit magnet arranges in the same way, described auxiliary magnet and described limit magnet form magnetic loop, by described magnetic loop the metal ion in the plasma body is moved to the fringe region of described reaction chamber, to increase the target particle at the deposition of described workpiece to be machined fringe region.Wherein, described auxiliary magnet is a plurality of permanent magnetism posts, and described a plurality of permanent magnetism posts are embedded in the marginal position of described chuck equably.
Wherein, described auxiliary magnet is permanent-magnetic clamp, and described permanent-magnetic clamp is embedded in the marginal position of described chuck.
Wherein, described auxiliary magnet is ruhmkorff coil, and described ruhmkorff coil is connected with the first direct supply that is arranged on the reaction chamber outside, and described ruhmkorff coil comprises a circle or multiturn coil.
Preferably, the distance between the outer peripheral edges of the inner peripheral of described auxiliary magnet and described workpiece to be machined is 10-15mm.
Wherein, described limit magnet is the polylith permanent magnet, and described polylith permanent magnet ring is evenly arranged around the sidewall of described reaction chamber.
Wherein, described limit magnet is permanent-magnetic clamp, and described permanent-magnetic clamp is sheathed on the outside of described reaction cavity.
Preferably, described limit magnet is ruhmkorff coil, and described ruhmkorff coil is connected with the second direct supply of peripheral hardware, and described ruhmkorff coil comprises a circle or multiturn.
Wherein, described chuck is mechanical chuck or electrostatic chuck.
Wherein, also be provided with magnetron above described target, described magnetron is Nonequilibrium magnetic keyholed back plate or unbalanced magnetron pipe.
The present invention has following beneficial effect:
Magnetic control sputtering device provided by the invention, the magnetic loop that forms by the limit magnet that arranges in the same way and auxiliary magnet can make the metal ion in the plasma body move to the fringe region of reaction chamber, thereby the target particle is increased at the deposition of workpiece to be machined fringe region, and then improve the homogeneity of film thickness.In addition, present embodiment need not to utilize magnetron to form magnetic loop at the reaction chamber fringe region, and this magnetic loop can not rotate variation because of magnetron, it is statically stable magnetic loop, therefore, even the film of deposition is thinner, also can obtain the film of even thickness.
Description of drawings
Fig. 1 is the structure diagram of typical magnetic control sputtering device;
Fig. 2 is the structure diagram of improved magnetic control sputtering device;
Fig. 3 is the structure diagram of embodiment of the invention magnetic control sputtering device;
Fig. 4 is the vertical view that the embodiment of the invention is provided with the chuck of auxiliary magnet;
Fig. 5 is the sectional view along A-A line among Fig. 4;
Fig. 6 is the vertical view of the another kind of auxiliary magnet of the embodiment of the invention;
Fig. 7 is the sectional view of chuck in the variant embodiment of the present invention.
Embodiment
For making those skilled in the art understand better technical scheme of the present invention, come magnetron sputtering equipment provided by the invention is described in detail below in conjunction with accompanying drawing.
Fig. 3 is the structure diagram of embodiment of the invention magnetic control sputtering device.See also Fig. 3, magnetic control sputtering device reaction chamber 1, airing system 7, chuck 5 and target 6.Wherein, chuck 5 is arranged on the bottom of reaction cavity 1, is used for carrying workpiece to be machined 8.Target 6 is arranged on the top of reaction cavity 1, and is connected with the direct supply (not shown) that is arranged on reaction chamber 1 outside.Direct supply provides bias voltage to target 6, makes target 6 be negative pressure with respect to the cavity 1 of ground connection.The surface that positive ion in the plasma body in the reaction chamber 1 is subjected to the attraction sputtering target material 6 of this negative pressure is overflowed the atoms metal on target 6 surfaces and is deposited on the surface of workpiece to be machined 8, thereby forms film on the surface of workpiece to be machined 8.
The outside at the sidewall of reaction chamber 1 is provided with limit magnet 11, and limit magnet 11 is positioned at the top of chuck 5.Simultaneously, also be provided with auxiliary magnet 12 at the edge of chuck 5, the magnetic pole of the magnetic pole of auxiliary magnet 12 and limit magnet 11 arranges in the same way, that is, when the N of limit magnet 11 arranged extremely downwards, the N utmost point of auxiliary magnet 12 also arranged downwards, and vice versa.Limit magnet 11 and auxiliary magnet 12 form magnetic loop at the fringe region of reaction chamber 1, the magnetic field that namely produces vertical direction, and also this magnetic field evenly distributes at vertical direction.Because the effect of lorentz's force, this magnetic field will fetter a large amount of electronics, the electron density at reaction chamber 1 edge is increased, thereby the live metal particle that got off by sputter is moved to the fringe region of reaction chamber 1, and then increase the target particle at the deposition of workpiece to be machined fringe region, improve the homogeneity of film thickness.
In the present embodiment, auxiliary magnet is the permanent magnetism post that is embedded in the chuck edge.Fig. 4 is the vertical view that the embodiment of the invention is provided with the chuck of auxiliary magnet, and Fig. 5 is the sectional view along A-A line among Fig. 4.See also Fig. 4 and Fig. 5, be inlaid with eight permanent magnetism post 12a at the edge of chuck 5, and eight permanent magnetism post 12a are evenly distributed in the edge of chuck 5.Place workpiece to be machined 8 in order not affect at chuck 5 upper surfaces, the upper surface of permanent magnetism post 12a is lower than the upper surface of chuck 5.But this does not show that the upper surface of permanent magnetism post 12a must be lower than the upper surface of chuck 5.In fact, the upper surface of permanent magnetism post 12a is higher than the upper surface of chuck 5 can realize purpose of the present invention equally, and, belong to equally protection scope of the present invention.In addition, the difference of altitude of the upper surface of the upper surface of permanent magnetism post 12a and chuck 5 can be adjusted according to processing conditions or arts demand.No matter but how many difference of altitude of the upper surface of the upper surface of permanent magnetism post 12a and chuck 5 is, all can not cause large impact to the magnetic line of force of permanent magnetism post 12a and 11 formation of limit magnet.
Be understood that present embodiment auxiliary magnet 12 comprises eight permanent magnetism post 12a, but this does not represent that auxiliary magnet 12 can only arrange eight permanent magnetism post 12a, permanent magnetism post 12a fixes by SUS410 stainless steel mounting block, affects the homogeneity in magnetic field to avoid mounting block.In fact, auxiliary magnet 12 can arrange an any amount permanent magnetism post 12a according to processing requirement.No matter auxiliary magnet 12 comprises several permanent magnetism post 12a, all belong to protection scope of the present invention.
In order to make auxiliary magnet 12 and limit magnet 11 form good magnetic loop, to avoid simultaneously auxiliary magnet 12 to affect chuck 5 and place workpiece to be machined 8, the distance B between the outer peripheral edges of the inner peripheral of auxiliary magnet 12 and workpiece to be machined 8 is 10-15mm.Be understood that the distance B between the outer peripheral edges of the inner peripheral of auxiliary magnet 12 and workpiece to be machined 8 also can be adjusted according to actual needs.
In the present embodiment, limit magnet 11 is permanent-magnetic clamp, and permanent-magnetic clamp is sheathed on the outside of the sidewall of reaction chamber 1.The magnetic loop that forms at the fringe region of reaction chamber 1 by permanent-magnetic clamp and permanent magnetism post 12a, this magnetic loop makes the target metallics that got off by sputter move to the edge of reaction chamber 1, thereby increase the target metallics at the deposition of workpiece to be machined 8 fringe regions, improve the homogeneity of film thickness, and then improve the processing quality of magnetic control sputtering device.
The present embodiment magnetic control sputtering device also comprises airing system, and in order to provide implementing process required process gas to reaction chamber 1 inside, such as argon gas or nitrogen etc., process gas is ionized the formation plasma body in reaction chamber 1.
The motor 4 that also is provided with magnetron 3 and is used for driving magnetron motion above target 6, magnetron 3 can improve the density of the plasma body of target 6 surf zones, thereby improves the sputter rate of target 6.And present embodiment is owing to need not to utilize magnetron to form magnetic loop at the reaction chamber fringe region, and therefore, magnetron 3 can adopt the unbalanced magnetron pipe, also can adopt the Nonequilibrium magnetic keyholed back plate.
In the present embodiment, chuck 5 can adopt mechanical chuck, also can adopt electrostatic chuck, can certainly adopt the chuck of other type.
Need to prove that in the present embodiment, auxiliary magnet 12 is eight permanent magnetism post 12a.In fact, auxiliary magnet 12 also can be permanent-magnetic clamp 12b, and permanent-magnetic clamp 12b is embedded in the edge of chuck 5, as shown in Figure 6, is the vertical view of the another kind of auxiliary magnet of the embodiment of the invention.
In addition, as a variant embodiment of the present invention, auxiliary magnet 12 also can be ruhmkorff coil, as shown in Figure 7, is the sectional view of chuck in the variant embodiment of the present invention.In chuck 5, inlay ruhmkorff coil 12c.Ruhmkorff coil 12c is connected with the first direct supply that is arranged on reaction chamber 1 outside.When in ruhmkorff coil 12c, passing into electric current, according to electromagnetic induction principle, ruhmkorff coil 12c will produce inducedmagnetic field, and this inducedmagnetic field and limit magnet 11 form magnetic loop, charged target particle is moved to the edge of reaction chamber 1, thereby improve the homogeneity of film.Be understood that the number of turn of ruhmkorff coil 12c can be set as a circle or multiturn coil according to actual needs.
Similarly, in the present embodiment, limit magnet 11 is permanent-magnetic clamp.In fact, limit magnet 11 also can be made of the polylith permanent magnet, and the polylith permanent magnet is evenly arranged around the sidewall of reaction chamber 1, so that limit magnet 11 and auxiliary magnet 12 produce uniform magnetic loop at the marginal position of reaction chamber 1.
In addition, limit magnet 11 also can be ruhmkorff coil, and ruhmkorff coil is connected with the second direct supply that is arranged on reaction chamber 1 outside.When in ruhmkorff coil, passing into electric current, according to electromagnetic induction principle, ruhmkorff coil will produce inducedmagnetic field, and this inducedmagnetic field and auxiliary magnet 12 form magnetic loop, charged target particle is moved to the edge of reaction chamber 1, thereby improve the homogeneity of film.Be understood that the number of turn of ruhmkorff coil can be set as a circle or multiturn coil according to actual needs.
Need to prove that also the magnetic control sputtering device that present embodiment provides can be used for sputter Ta, Cu, the materials such as Ti, Al, also can be used for other material of sputter, to prepare corresponding with it film.And magnetic control sputtering device not only can be used for the making of unicircuit, also can make other function film.
The magnetic control sputtering device that present embodiment provides forms magnetic loop by limit magnet and auxiliary magnet at the fringe region of reaction chamber, the target particle that this magnetic loop can get off sputter, fringe region to reaction chamber moves, and then increase the target particle at the deposition of workpiece to be machined fringe region, improve the homogeneity of film thickness.In addition, present embodiment need not to utilize magnetron to form magnetic loop at the reaction chamber fringe region, and this magnetic loop can not rotate variation because of magnetron, it is statically stable magnetic loop, therefore, even the film of deposition is thinner, also can obtain the film of even thickness.
Be understandable that above embodiment only is the illustrative embodiments that adopts for principle of the present invention is described, yet the present invention is not limited thereto.For those skilled in the art, without departing from the spirit and substance in the present invention, can make various modification and improvement, these modification and improvement also are considered as protection scope of the present invention.
Claims (10)
1. magnetic control sputtering device, comprise reaction chamber, chuck and target, described chuck is arranged on described reaction chamber bottom, it is used for the carrying workpiece to be machined, described target is arranged on described reaction chamber top, be provided with the limit magnet in the outside of described reaction chamber sidewall, and described limit magnet is positioned at the top of described chuck, it is characterized in that, edge at described chuck comprises auxiliary magnet, the magnetic pole of the magnetic pole of described auxiliary magnet and described limit magnet arranges in the same way, described auxiliary magnet and described limit magnet form magnetic loop, by described magnetic loop the metal ion in the plasma body is moved to the fringe region of described reaction chamber, to increase the target particle at the deposition of described workpiece to be machined fringe region.
2. magnetic control sputtering device according to claim 1 is characterized in that, described auxiliary magnet is a plurality of permanent magnetism posts, and described a plurality of permanent magnetism posts are embedded in the marginal position of described chuck equably.
3. magnetic control sputtering device according to claim 1 is characterized in that, described auxiliary magnet is permanent-magnetic clamp, and described permanent-magnetic clamp is embedded in the marginal position of described chuck.
4. magnetic control sputtering device according to claim 3 is characterized in that, described auxiliary magnet is ruhmkorff coil, and described ruhmkorff coil is connected with the first direct supply that is arranged on the reaction chamber outside, and described ruhmkorff coil comprises a circle or multiturn coil.
5. magnetic control sputtering device according to claim 1 is characterized in that, the distance between the inner peripheral of described auxiliary magnet and the outer peripheral edges of described workpiece to be machined is 10-15mm.
6. magnetic control sputtering device according to claim 1 is characterized in that, described limit magnet is the polylith permanent magnet, and described polylith permanent magnet ring is evenly arranged around the sidewall of described reaction chamber.
7. magnetic control sputtering device according to claim 6 is characterized in that, described limit magnet is permanent-magnetic clamp, and described permanent-magnetic clamp is sheathed on the outside of described reaction cavity.
8. magnetic control sputtering device according to claim 1 is characterized in that, described limit magnet is ruhmkorff coil, and described ruhmkorff coil is connected with the second direct supply of peripheral hardware, and described ruhmkorff coil comprises a circle or multiturn.
9. the described magnetic control sputtering device of any one is characterized in that according to claim 1-8, and described chuck is mechanical chuck or electrostatic chuck.
10. the described magnetic control sputtering device of any one is characterized in that according to claim 1-8, also is provided with magnetron above described target, and described magnetron is Nonequilibrium magnetic keyholed back plate or unbalanced magnetron pipe.
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| CN201210105215.0A CN103374705B (en) | 2012-04-11 | 2012-04-11 | A kind of magnetic control sputtering device |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104746031A (en) * | 2013-12-29 | 2015-07-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | A sputtering system |
| CN104746025A (en) * | 2013-12-27 | 2015-07-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Sputtering apparatus |
| CN106011761A (en) * | 2015-03-31 | 2016-10-12 | Spts科技有限公司 | Method and apparatus for depositing a material |
| CN107447195A (en) * | 2016-05-30 | 2017-12-08 | 北京北方华创微电子装备有限公司 | Magnetron and magnetic control sputtering system |
| CN108690962A (en) * | 2017-04-06 | 2018-10-23 | 北京北方华创微电子装备有限公司 | magnetron sputtering apparatus and magnetron sputtering deposition method |
| CN112738968A (en) * | 2020-12-18 | 2021-04-30 | 北京北方华创微电子装备有限公司 | Plasma generating device and semiconductor processing equipment |
| WO2021204012A1 (en) * | 2020-04-07 | 2021-10-14 | 北京北方华创微电子装备有限公司 | Magnetic structure in semiconductor device, and semiconductor device |
| WO2021259233A1 (en) | 2020-06-23 | 2021-12-30 | 中国石油化工股份有限公司 | Anti-coking equipment, preparation method therefor, and use thereof |
| CN114196931A (en) * | 2021-12-21 | 2022-03-18 | 北京北方华创微电子装备有限公司 | Semiconductor chamber |
| CN114892138A (en) * | 2022-04-15 | 2022-08-12 | 上海积塔半导体有限公司 | Magnetron sputtering deposition device and magnetron sputtering deposition method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104746025A (en) * | 2013-12-27 | 2015-07-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Sputtering apparatus |
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| CN108690962A (en) * | 2017-04-06 | 2018-10-23 | 北京北方华创微电子装备有限公司 | magnetron sputtering apparatus and magnetron sputtering deposition method |
| CN108690962B (en) * | 2017-04-06 | 2020-06-19 | 北京北方华创微电子装备有限公司 | Magnetron sputtering equipment and magnetron sputtering deposition method |
| WO2021204012A1 (en) * | 2020-04-07 | 2021-10-14 | 北京北方华创微电子装备有限公司 | Magnetic structure in semiconductor device, and semiconductor device |
| WO2021259233A1 (en) | 2020-06-23 | 2021-12-30 | 中国石油化工股份有限公司 | Anti-coking equipment, preparation method therefor, and use thereof |
| CN112738968A (en) * | 2020-12-18 | 2021-04-30 | 北京北方华创微电子装备有限公司 | Plasma generating device and semiconductor processing equipment |
| CN114196931A (en) * | 2021-12-21 | 2022-03-18 | 北京北方华创微电子装备有限公司 | Semiconductor chamber |
| CN114196931B (en) * | 2021-12-21 | 2023-09-08 | 北京北方华创微电子装备有限公司 | Semiconductor chamber |
| CN114892138A (en) * | 2022-04-15 | 2022-08-12 | 上海积塔半导体有限公司 | Magnetron sputtering deposition device and magnetron sputtering deposition method |
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Address after: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |