CN104746025A - Sputtering apparatus - Google Patents
Sputtering apparatus Download PDFInfo
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- CN104746025A CN104746025A CN201310738144.2A CN201310738144A CN104746025A CN 104746025 A CN104746025 A CN 104746025A CN 201310738144 A CN201310738144 A CN 201310738144A CN 104746025 A CN104746025 A CN 104746025A
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- pedestal
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- sputter equipment
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Abstract
The invention provides a sputtering apparatus, which comprises a technology chamber, a magnetron and a pedestal for bearing a substrate, the magnetron and the pedestal are arranged in the technology chamber, the magnetron is positioned over the pedestal, wherein the sputtering apparatus also comprises a magnetic element, the magnetic element is arranged at a preset position in the technology chamber for increasing the magnetic field intensity of the preset position; and the preset position is determined according to a material of a target material between the magnetron and the pedestal. When the sputtering apparatus is used for depositing a film layer on the substrate, target material atoms or molecules move by deflecting the preset position, resistivity of the film layer at the preset position is increased, resistivity uniformity of the deposited film layer can be integrally improved, and the film thickness uniformity and the square resistance uniformity of the film layer is improved.
Description
Technical field
The present invention relates to field of semiconductor devices, particularly, relate to a kind of sputter equipment.
Background technology
Physical vapor deposition (PVD) general reference adopts physical method to prepare the Film preparation technique of rete, physical gas phase deposition technology can be applicable to a lot of technology field, as silicon perforation (Through Silicon Via, the TSV) technology etc. in copper interconnecting line technology, encapsulation field.
Sputter-deposition technology is a kind of method of typical physical vapor deposition, and Fig. 1 is that a kind of master of typical sputter equipment cuts open schematic diagram.As shown in Figure 1, this sputter equipment mainly comprises: the propulsion source 5 removing the movement locus from cooling chamber 4, pedestal 14, magnetron 6 and control magnetron 6 of process cavity 1, vacuum system 10, target 3, cooling target.In technological process, the atom of part target 3 or molecule come off, and are deposited on substrate surface and form rete.
In sputter-deposition technology, common metal deposition (as: copper, titanium, tantalum etc.) or reactive sputtering metallic compound (as, tantalum nitride etc.), their square resistances on crystal and thickness are all equally distributed, and the product of these two parameters---resistivity is basically identical on full wafer substrate.But, there is pattern difference due to reactive sputtering metallic compound in some reactive sputtering rete, cause the square resistance of sputtered layer and film thickness distribution uneven, and resistivity is inconsistent in whole on-chip value, and the resistivity at substrate edge place is on the low side, and the resistivity of center is higher.Be multiplied with square resistance because resistivity is thicknesses of layers, so the skewness of resistivity result in film thickness uniformity and square resistance homogeneity two operational characteristiies, when one improves, another one will be deteriorated.
When depositing common metal, in order to improve film uniformity and square resistance homogeneity, can by changing the movement locus of magnetron 6, and make target 3 be in more uniform magnetic field, thus make the atom stemming from target 3 in process cavity 1 or molecular distribution comparatively even, thus can to make to be deposited on described on-chip rete more even.
Such as, but at deposition reaction sputtered layer, during TiN rete, even if the thicknesses of layers be deposited on substrate is everywhere identical, rete resistivity is everywhere still different.
Therefore, how to reach the resistivity evenness better improving rete and become this area technical problem urgently to be resolved hurrily.
Summary of the invention
The object of the present invention is to provide a kind of sputter equipment, use described sputter equipment can improve the rete resistivity evenness of deposition.
To achieve these goals, the invention provides a kind of sputter equipment, comprise the pedestal of process cavity, magnetron and carrying substrates, described magnetron and described pedestal are all arranged in described process cavity, and described magnetron is positioned at the top of described pedestal, wherein, described sputter equipment also comprises magnet assembly, described magnet assembly is arranged on the predetermined position in described process cavity, and to increase the magneticstrength in this predetermined position, described predetermined position is determined according to the material of the target between magnetron and pedestal.
Preferably, described magnet assembly comprises magnet and housing, and described magnet is arranged in described housing, and described magnet assembly is fixed on the predetermined position of described process cavity by described housing.
Preferably, described housing comprises accommodation section and is formed in the installation portion on this accommodation section, and described magnet is arranged in described accommodation section, and described housing is fixed on the predetermined position of described process cavity by described installation portion.
Preferably, described magnet is permanent magnet.
Preferably, described magnet temperature resistant range is 0 DEG C ~ 150 DEG C.
Preferably, described magnet assembly also comprises separator, and described separator is arranged in described accommodation section, and coated described magnet.
Preferably, described magnet assembly comprises multiple described magnet and the multiple described housing corresponding with each described magnet, and multiple described housing is arranged around described pedestal.
Preferably, described housing is the ring structure around described pedestal, is provided with multiple described magnet in described housing, and multiple described magnet is evenly distributed in described housing.
In the present invention, described magnet assembly is arranged on the predetermined position of process cavity, to improve the magneticstrength in this predetermined position, make when utilizing sputter equipment provided by the present invention to carry out sputtering sedimentation, target atom or molecule are partial to the motion of this predetermined position, increase the resistivity in this predetermined position, thus improve the resistivity evenness of depositional coating on the whole, and then improve film uniformity and the square resistance homogeneity of rete.
Accompanying drawing explanation
Accompanying drawing is used to provide a further understanding of the present invention, and forms a part for specification sheets, is used from explanation the present invention, but is not construed as limiting the invention with embodiment one below.In the accompanying drawings:
Fig. 1 is that the master of existing sputter equipment cuts open schematic diagram;
Fig. 2 is that the master of sputter equipment in the present invention cuts open schematic diagram;
Fig. 3 is that the master of magnet assembly in the sputter equipment shown in Fig. 2 cuts open schematic diagram;
Fig. 4 is the vertical view of the magnet assembly of the first embodiment;
Fig. 5 is the vertical view of the magnet assembly of the second embodiment.
Description of reference numerals
1: process cavity; 2: web member; 3: target; 4: cooling chamber; 5: propulsion source; 6: magnetron; 7: deionized water; 9: fastening piece; 10: vacuum system; 11: separator; 12: magnet; 14: pedestal; 15: housing; 15a: accommodation section; 15b: installation portion.
Embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in detail.Should be understood that, embodiment described herein, only for instruction and explanation of the present invention, is not limited to the present invention.
The invention provides a kind of sputter equipment, as shown in Figure 2, comprise the pedestal 14 of process cavity 1, magnetron 6 and carrying substrates, magnetron 6 and pedestal 14 are all arranged in process cavity 1, and magnetron 6 is positioned at the top of pedestal 14, wherein, described sputter equipment also comprises magnet assembly, described magnet assembly is arranged on the predetermined position in process cavity 1, to increase the magneticstrength in this predetermined position.
Be understandable that, target 3 for sputtering is arranged between pedestal 14 and magnetron 6, magnetron 6 moves in target 3 surface range, form magnetic field, and make target 3 be in uniform magnetic field, the target atom that target 3 sputters or molecule deposition are being arranged on the substrate surface on pedestal 14, thus form rete.
Should be understood that, predetermined position herein corresponds to when not arranging described magnet assembly, when being arranged on the deposition on substrate rete on pedestal 14, and the position that resistivity is less.In the present invention, described magnet assembly is arranged on the described predetermined position of process cavity 1, make when sputtering sedimentation, the magneticstrength in this predetermined position increases, target atom or molecule can be partial to this predetermined position due to the effect being subject to magnetic field and move, thus the value that the resistivity that described substrate corresponds to described pre-position is increased is greater than the value that other position resistivity increase, and then it is more even to make to be deposited on described on-chip rete resistivity.
Described predetermined position can be determined according to the material of the target 3 between magnetron 6 and pedestal 14.
Such as, when reactive sputtering metallic compound is TiN, the resistivity of the rete of deposition is comparatively large at described substrate center place, and less in the edge of described substrate, and therefore, described predetermined position can be set to the edge near pedestal 14.Correspondingly, can described magnet assembly be arranged on the sidewall in process cavity 1, also described magnet assembly can be arranged on the diapire be positioned at below pedestal 14 edge, as long as described magnet assembly can increase the magneticstrength of pedestal 14 edge.For the ease of installing, preferably, as shown in Figure 2, described magnet assembly to be arranged in process cavity 1 and to be positioned on the sidewall at pedestal 14 edge.
In the embodiment shown in figure 2, described magnet assembly is arranged on the top of pedestal 14, but the present invention is not limited to this.Such as, described magnet assembly can be arranged on the below of pedestal 14, or described magnet assembly can also be all set above and below pedestal 14.
Restriction not concrete to the concrete structure of described magnet assembly in the present invention, as long as can increase the magneticstrength in described predetermined position.In order to make described magnet assembly have better simply structure, preferably, as shown in Figures 2 and 3, described magnet assembly comprises magnet 12 and housing 15, and magnet 12 is arranged in housing 15, and described magnet assembly is fixed on the predetermined position of process cavity 1 by housing 15.
The effect of magnet 12 is the magneticstrength strengthening described predetermined position, magnet 12 can be that column also can for block, the two poles of the earth of magnet 12 lay respectively at the two ends of magnet 12, to produce closed magnetic line of force, the effect that the target atom of sputtering or molecule are subject to magnetic field in process cavity 1 makes movement locus change.
The effect of housing 15 is the installation being convenient to magnet 12, and can protect magnet 12.In the present invention, the restriction not special to the concrete material of housing 15, as long as the high temperature that can tolerate in process cavity 1 and do not shield the magnetic field of magnet 12, such as, can utilize ferrous materials manufacture housing 15.
In order to more easily housing 15 is fixed on described predetermined position, further, housing 15 can comprise accommodation section 15a and be formed in the installation portion 15b on the 15a of accommodation section, and magnet 12 is arranged in the 15a of accommodation section, and housing 15 is fixed on the predetermined position of process cavity 1 by installation portion 15b.
Fixed form between installation portion 15b and the sidewall of process cavity 1 can be connected (e.g., fix and weld) or dismountable connection (e.g., utilizing bolt and nut) for non-removable.For the ease of the maintenance of described sputter equipment, the position of described magnet assembly can be regulated neatly (such as simultaneously, described predetermined position is changed) according to the difference of reactive sputtering material, preferably, dismountable mode of connection can be adopted to be fixed on the inwall of process cavity 1 by installation portion 15b, as shown in Figure 2, installation portion 15b is fixed on the inwall of process cavity 1 by fastening piece 9.
In above-mentioned two kinds of embodiments, concrete restriction is not done to the structure of magnet 12, as long as can magnetic field be produced, can be permanent magnet also can for non-permanent magnet (as, electromagnet etc.), in order to simplify the one-piece construction of described sputter equipment, preferably, magnet 12 is permanent magnet, can produce lasting magnetic field without the need to conditions such as impressed currents.
When magnet 12 is permanent magnet, the temperature resistant range of this magnet 12 is generally 0 DEG C ~ 150 DEG C.
Be understandable that, in sputter deposition craft, temperature in process cavity 1 higher (the highest can to 96 DEG C), demagnetize because temperature rises to prevent magnet 12, preferably, described magnet assembly can also comprise separator 11, and separator 11 is arranged in the 15a of accommodation section, and the coated magnet 12 of this separator 11.In the present invention, concrete restriction is not done to the form of separator 11, as long as heat insulation effect can be played.Such as, separator 11 can be suppressed by the good basalt fibre of effect of heat insulation and form.
Further, in order to improve the homogeneity of depositional coating, such as, during reactive sputtering TiN, described magnet assembly can increase the magneticstrength of pedestal 14 edge equably, the surrounding of pedestal 14 evenly can be provided with multiple magnet 12, makes in the process of film deposition, and the resistivity being arranged on the substrate edge place on pedestal 14 can evenly improve.
As the first embodiment of the present invention, as shown in Figure 4, described magnet assembly can comprise multiple magnet 12 and the multiple housings 15 corresponding with each magnet 12, and multiple housing 15 is arranged around pedestal 14.Particularly, be provided with the separator 11 of a magnet 12 and this magnet 12 coated in the accommodation section 15a of each housing 15, the installation portion 15b of each housing 15 is fixed on the inwall of process cavity 1 by fastening piece 9.In order to make the magneticstrength of pedestal 14 edge be uniformly distributed, preferably, multiple housing 15 is arranged around pedestal 14 equably.
In sputter deposition craft, target 3 is subject to bombardment and sputters, target atom or the molecule of sputtering are moved to pedestal 14 direction by the surface of target 3, now, the magnetic field that the magnet 12 arranged in multiple housing 15 produces makes target atom or molecular motion track change, be partial to the direction motion that magneticstrength is higher, that is, pedestal 14 edge direction.Therefore, the target atom or the molecular ratio that are arranged on the substrate edge place deposition on pedestal 14 increase when not adding magnetic field to some extent, the target atom of described substrate center place deposition or molecular ratio reduce when not adding magnetic field to some extent, thus improve the resistivity evenness of rete, and then improve film uniformity and square resistance homogeneity.
As the second embodiment of the present invention, as shown in Figure 5, housing 15 is the ring structure around pedestal 14, be provided with multiple magnet 12, and multiple magnet 12 is evenly distributed in housing 15 in housing 15.In the accommodation section 15a that separator 11 is arranged on housing 15 and coated each magnet 12, the installation portion 15b of housing 15 is fixed on the inwall of process cavity 1 by fastening piece 9.In the present embodiment, concrete restriction is not done to the number of fastening piece 9, can be one also can for multiple, in order to be arranged in process cavity 1 more firmly by housing 15, preferably, the number of fastening piece 9 is multiple.In the present embodiment, a housing 15 can be set, also multiple housing 15 can be set along the longitudinal direction of process cavity 1, should be understood that, in each housing 15, magnet 12 should be provided with.
Identical with the first embodiment, the multiple magnets 12 arranged in housing 15 produce uniform magnetic field at the edge of pedestal 14.At the target atom of sputtering or molecule from the surface of target 3 to the moving process of pedestal 14 direction, the edge direction motion of pedestal 14 is partial in the effect that target atom or molecule are subject to magnetic field, increase to some extent when making the target atom of the substrate edge place deposition be arranged on pedestal 14 or molecular ratio not add magnetic field, the target atom of described substrate center place deposition or molecular ratio reduce when not adding magnetic field to some extent, thus improve the resistivity evenness of rete.
In above-mentioned enforcement, described magnet assembly is arranged on the edge of pedestal 14, improve the magneticstrength at the substrate edge place be arranged on pedestal 14, make target atom or molecule in process cavity 1, be partial to the motion of described substrate edge, add the resistivity of the rete being positioned at described substrate edge place, thus improve the resistivity evenness of depositional coating on the whole, and then improve film uniformity and the square resistance homogeneity of rete.
Those skilled in the art should be understood that, although describe sputter equipment provided by the present invention for sputtering sedimentation TiN rete, but the present invention is not limited to this, but other metals can also be applied to (such as, Cu, Ti etc.) or metallic compound (such as, AlN) sputter deposition craft in.
Be understandable that, the illustrative embodiments that above embodiment is only used to principle of the present invention is described and adopts, but the present invention is not limited thereto.For those skilled in the art, without departing from the spirit and substance in the present invention, can make various modification and improvement, these modification and improvement are also considered as protection scope of the present invention.
Claims (8)
1. a sputter equipment, comprise the pedestal of process cavity, magnetron and carrying substrates, described magnetron and described pedestal are all arranged in described process cavity, and described magnetron is positioned at the top of described pedestal, it is characterized in that, described sputter equipment also comprises magnet assembly, and described magnet assembly is arranged on the predetermined position in described process cavity, to increase the magneticstrength in this predetermined position;
Described predetermined position is determined according to the material of the target between magnetron and pedestal.
2. sputter equipment according to claim 1, is characterized in that, described magnet assembly comprises magnet and housing, and described magnet is arranged in described housing, and described magnet assembly is fixed on the predetermined position of described process cavity by described housing.
3. sputter equipment according to claim 2, it is characterized in that, described housing comprises accommodation section and is formed in the installation portion on this accommodation section, and described magnet is arranged in described accommodation section, and described housing is fixed on the predetermined position of described process cavity by described installation portion.
4. sputter equipment according to claim 3, is characterized in that, described magnet is permanent magnet.
5. sputter equipment according to claim 4, is characterized in that, described magnet temperature resistant range is 0 DEG C ~ 150 DEG C.
6. the sputter equipment according to claim 4 or 5, is characterized in that, described magnet assembly also comprises separator, and described separator is arranged in described accommodation section, and coated described magnet.
7. sputter equipment as claimed in any of claims 2 to 5, is characterized in that, described magnet assembly comprises multiple described magnet and the multiple described housing corresponding with each described magnet, and multiple described housing is arranged around described pedestal.
8. sputter equipment as claimed in any of claims 2 to 5, is characterized in that, described housing is the ring structure around described pedestal, is provided with multiple described magnet in described housing, and multiple described magnet is evenly distributed in described housing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310738144.2A CN104746025A (en) | 2013-12-27 | 2013-12-27 | Sputtering apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310738144.2A CN104746025A (en) | 2013-12-27 | 2013-12-27 | Sputtering apparatus |
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| CN104746025A true CN104746025A (en) | 2015-07-01 |
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| CN201310738144.2A Pending CN104746025A (en) | 2013-12-27 | 2013-12-27 | Sputtering apparatus |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108004516A (en) * | 2016-10-31 | 2018-05-08 | 北京北方华创微电子装备有限公司 | Magnetron sputtering chamber, magnetron sputtering apparatus and magnetron |
| CN108690962A (en) * | 2017-04-06 | 2018-10-23 | 北京北方华创微电子装备有限公司 | magnetron sputtering apparatus and magnetron sputtering deposition method |
| CN108690961A (en) * | 2017-04-06 | 2018-10-23 | 北京北方华创微电子装备有限公司 | Magnetron sputtering component, magnetron sputtering chamber and magnetron sputtering apparatus |
| WO2018196071A1 (en) * | 2017-04-27 | 2018-11-01 | 武汉华星光电技术有限公司 | Device and method for forming film by means of physical sputtering |
| TWI821080B (en) * | 2021-12-21 | 2023-11-01 | 大陸商北京北方華創微電子裝備有限公司 | Semiconductor chamber |
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| CN101597789A (en) * | 2008-06-02 | 2009-12-09 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Electrostatic clamping device and use the semiconductor processing equipment of this electrostatic clamping device |
| CN103374705A (en) * | 2012-04-11 | 2013-10-30 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Magnetron sputtering device |
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Patent Citations (3)
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| CN1606795A (en) * | 2001-11-14 | 2005-04-13 | 应用材料有限公司 | Magnet array in conjunction with rotating magnetron for plasma sputtering |
| CN101597789A (en) * | 2008-06-02 | 2009-12-09 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Electrostatic clamping device and use the semiconductor processing equipment of this electrostatic clamping device |
| CN103374705A (en) * | 2012-04-11 | 2013-10-30 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Magnetron sputtering device |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108004516A (en) * | 2016-10-31 | 2018-05-08 | 北京北方华创微电子装备有限公司 | Magnetron sputtering chamber, magnetron sputtering apparatus and magnetron |
| JP2019535899A (en) * | 2016-10-31 | 2019-12-12 | 北京北方華創微電子装備有限公司Ｂｅｉｊｉｎｇ Ｎａｕｒａ Ｍｉｃｒｏｅｌｅｃｔｒｏｎｉｃｓ Ｅｑｕｉｐｍｅｎｔ Ｃｏ．， Ｌｔｄ． | Magnetron, magnetron sputtering chamber and magnetron sputtering apparatus |
| CN108004516B (en) * | 2016-10-31 | 2020-06-19 | 北京北方华创微电子装备有限公司 | Magnetron sputtering chamber, magnetron sputtering device and magnetron |
| CN108690962A (en) * | 2017-04-06 | 2018-10-23 | 北京北方华创微电子装备有限公司 | magnetron sputtering apparatus and magnetron sputtering deposition method |
| CN108690961A (en) * | 2017-04-06 | 2018-10-23 | 北京北方华创微电子装备有限公司 | Magnetron sputtering component, magnetron sputtering chamber and magnetron sputtering apparatus |
| CN108690962B (en) * | 2017-04-06 | 2020-06-19 | 北京北方华创微电子装备有限公司 | Magnetron sputtering equipment and magnetron sputtering deposition method |
| WO2018196071A1 (en) * | 2017-04-27 | 2018-11-01 | 武汉华星光电技术有限公司 | Device and method for forming film by means of physical sputtering |
| TWI821080B (en) * | 2021-12-21 | 2023-11-01 | 大陸商北京北方華創微電子裝備有限公司 | Semiconductor chamber |
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Address after: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Applicant after: Beijing North China microelectronics equipment Co Ltd Address before: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Applicant before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |
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