CN101597789A - Electrostatic clamping device and use the semiconductor processing equipment of this electrostatic clamping device - Google Patents
Electrostatic clamping device and use the semiconductor processing equipment of this electrostatic clamping device Download PDFInfo
- Publication number
- CN101597789A CN101597789A CNA2008101142767A CN200810114276A CN101597789A CN 101597789 A CN101597789 A CN 101597789A CN A2008101142767 A CNA2008101142767 A CN A2008101142767A CN 200810114276 A CN200810114276 A CN 200810114276A CN 101597789 A CN101597789 A CN 101597789A
- Authority
- CN
- China
- Prior art keywords
- clamping device
- electrostatic clamping
- limit magnet
- magnet
- reaction chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Abstract
The invention discloses a kind of electrostatic clamping device, it comprises pedestal and limit magnet, and described limit magnet adopts such set-up mode: promptly, be provided with around described pedestal, and/or be arranged on the inside of described pedestal, and/or be arranged on the below of described pedestal.And described limit magnet comprises at least one limit magnet assemblies.In addition, the present invention also discloses a kind of semiconductor processing equipment of using above-mentioned electrostatic clamping device.Electrostatic clamping device provided by the invention and semiconductor processing equipment can produce stronger magnetic field in reaction chamber, and reduce electromagnetic interference to outside other technical modules of reaction chamber and instrument, also have simultaneously cost low, simple in structure, characteristics such as comparatively convenient are installed.
Description
Technical field
The present invention relates to microelectronics technology, in particular to a kind of electrostatic clamping device and the semiconductor processing equipment of using this electrostatic clamping device.
Background technology
Along with the high speed development of electronic technology, people are more and more higher to the integrated level requirement of unicircuit, and the processing/processing power of semiconducter device constantly improves in this enterprise that will seek survival the product unicircuit.At present, in the process of machining of semiconducter device, extensively adopt Cement Composite Treated by Plasma technology such as plasma technique etc.So-called plasma technique refers to, process gas produces the plasma body that ionization forms the atom, molecule and the free radical isoreactivity particle that contain a large amount of electronics, ion, excited state under the exciting of radio frequency power, these active particles with (for example treat sedimentary object, physics and chemical reaction take place in surface wafer), thereby are treating that sedimentary body surface obtains the settled layer that needs.
Above-mentioned plasma technique need realize by means of corresponding semiconductor processing equipment.Usually, the reaction chamber of semiconductor processing equipment is kept low-pressure state, the required process gas of deposition technique enters into reaction chamber by the gas distributing device that is arranged in the semiconductor processing equipment reaction chamber, and be subjected to exciting of radio frequency power or dc power at this, produce ionization and form plasma body.Target is discharged secondary electron by the positive ion sputter in the plasma body, and the electronics in described secondary electron and the plasma body is done Rameau motion under the common constraint in electric field and magnetic field, and collides more atom and molecule and make it ionization; The target atom that is sputtered by positive ion passes plasma slab and to the wafer surface motion, the seldom part in these target atom is ionized, and the overwhelming majority then is deposited on wafer surface with atomic state, to obtain required settled layer.
Aforementioned plasma technique such as sputtering technology etc. be particularly useful for unicircuit in making metal interconnecting layer and the preparation process on blocking layer.The effect of described metal interconnecting layer is to make each regional circuit electrical connection on the chip, and metal interconnecting layer is separated by with insulating medium layer each other, one deck blocking layer is set between metal interconnecting layer and insulating medium layer, spread to insulating medium layer in order to prevent the metal in the metal interconnecting layer on this blocking layer, reducing electromigration, and then improve tack between metal interconnecting layer and the insulating medium layer.
As everyone knows, in aforementioned plasma deposition process such as sputtering technology etc., magnetic field can influence the activity of various particles in the reaction chamber, the active situation of the electronics in especially above-mentioned secondary electron and the plasma body usually.For example,, then can increase the scope of activity of electronics, thereby the plasma body zone is enlarged if enlarge the interior field region of reaction chamber.In this case, when by the target atom that sputtered during through the plasma body zone that enlarges, its probability that is ionized will become greatly, thus the ionization level when having improved target as sputter.Simultaneously, the magnetic field zero zone of close chamber makes the plasma distribution at wafer surface place more even, and can improve step coverage in fill process, and improves uniformity of film in planar depositions technology.
Yet in actual process, particularly under the situation that wafer size increases gradually and critical size reduces gradually, because of problems such as chamber volume increase, the target atom ionization level is low, plasma distribution is inhomogeneous, and make processed/processing apparatus such as wafer step coverage and the bigger problem of thin film deposition homogeneity difference that hole is filled from its center to marginal existence.
For this reason, those skilled in the art constantly studies, and in the hope of can improving step coverage and thin film deposition homogeneity by the field region that enlarges in the reaction chamber, and reduces from the center of processed/processing apparatus such as wafer to the difference at its edge.At present, existing people proposes to enlarge field region in the reaction chamber by set up magnet in the reaction chamber outside, and for example Fig. 1 just shows a kind of like this semiconductor processing equipment.
As shown in Figure 1, the top of the reaction chamber 1 of this semiconductor processing equipment is provided with medium window (figure does not show), above this medium window, be provided with magnetron sputtering source magnet 2, below this medium window, be provided with target 3, be provided with electrostatic chuck 5 below reaction chamber 1, the semiconducter device 4 (such as wafer) of to be processed/processing just places on this chuck 5.In addition, be provided with limit magnet 6 in the side of reaction chamber 1 outside.Like this, by means of the combination of magnetron sputtering source magnet 2 and limit magnet 6, magnetic line of force is distributed in around chamber and the chuck, to enlarge the plasma body zone, and then the ionization level of raising target atom, thereby improve step coverage and the thin film deposition homogeneity that hole is filled to a certain extent.
Although in the prior art shown in Figure 1, by can enlarge the field region in the reaction chamber at reaction chamber outer setting limit magnet, and then can enlarge the scope in plasma body zone, and improve the ionization level of target atom, but but there is following problem in actual applications inevitably:
One, because limit magnet is arranged on the outside of reaction chamber, this can make the magneticstrength of reaction chamber inside more weak usually, and step coverage and thin film deposition homogeneity that more weak magnetic field can make hole fill all can't reach preferable effect.
Its two because limit magnet is arranged on the outside of reaction chamber, most magnetic line of force can be to the diffusion of the periphery of reaction chamber.Particularly, increase along with the reaction chamber volume, for the limit magnet that makes the chamber outside can influence preferably to the plasma generation of chamber central zone, just need to increase the magneticstrength of chamber external edge magnet, just require the remanent magnetism of limit magnet to become big, will cause bigger waste like this.For example, limit magnet shown in Figure 1 is exactly to have the magnetic line of force of half to be worked in this reaction chamber inside approximately, and second half magnetic line of force is then directly to the diffusion of the periphery of reaction chamber.
Its three, if the limit magnet of chamber outside adopts permanent magnet, then the cost of this limit magnet and entire equipment can be higher, this is all very expensive usually because can obtain the permanent magnet price of big remanent magnetism; And if the magnet of chamber outside adopts electro-magnet, then electric energy loss again can be bigger in actual applications.Therefore, the cost of the semiconductor processing equipment that provides of prior art is higher.
Summary of the invention
For solving the problems of the technologies described above, the invention provides a kind of electrostatic clamping device, it can produce stronger magnetic field in reaction chamber, and reduces the electromagnetic interference to outside other technical modules of reaction chamber and instrument, also has characteristics such as cost is low, simple in structure, installation is comparatively convenient simultaneously.
The present invention also provides a kind of semiconductor processing equipment, it can produce stronger magnetic field equally in reaction chamber, and reduce electromagnetic interference to outside other technical modules of reaction chamber and instrument, also have simultaneously cost low, simple in structure, characteristics such as comparatively convenient are installed.
For this reason, the invention provides a kind of electrostatic clamping device, comprise pedestal and limit magnet, described limit magnet adopts such set-up mode: promptly, be provided with around described pedestal, and/or be arranged on the inside of described pedestal, and/or be arranged on the below of described pedestal.
Wherein, described limit magnet comprises at least one limit magnet assemblies.
Wherein, described limit magnet assemblies is and the suitable ring texture of the profile of described pedestal.
Wherein, described ring-type limit magnet assemblies is a monoblock ringshaped magnet.
Wherein, described ring-type limit magnet assemblies comprises a plurality of magnet, and described a plurality of magnet evenly are provided with and in the form of a ring around described pedestal.
Wherein, described limit magnet assemblies is electro-magnet and/or permanent magnet.
Wherein, described limit magnet assemblies is adopted and is fixed in such a way on the described pedestal: promptly, and the mode that is spirally connected and/or riveted joint mode and/or welding process and/or bonding way, and/or be fixed on the described pedestal by means of stationary installation.
Wherein, when described limit magnet assemblies was two or more, these limit magnet assemblies adopted stacked set-up mode and/or nested set-up mode each other, and the relative size of these limit magnet assemblies influences the position in magnetic field zero zone.
In addition, the present invention also provides a kind of semiconductor processing equipment, and it comprises reaction chamber, and the lower position in described reaction chamber is provided with above-mentioned electrostatic clamping device, in order in inner uniform distribution and the bigger magnetic field of intensity of producing of described reaction chamber.
Wherein, the place, top position in described reaction chamber is provided with the required target of depositing operation corresponding to described electrostatic clamping device, and the magnetron sputtering source magnet is set above described target.
With respect to prior art, the present invention has such beneficial effect:
One, because electrostatic clamping device provided by the invention itself just is provided with limit magnet, thereby when being arranged at this electrostatic clamping device in the reaction chamber of semiconductor processing equipment, most of magnetic line of force of this limit magnet can be in this reaction chamber, therefore, the inside of this reaction chamber can make full use of the remanent magnetism of described limit magnet and produce stronger magneticstrength.In other words, for the magnet of same limit, when being arranged at it on electrostatic clamping device, its magneticstrength that produces in reaction chamber can be greater than it is arranged on the magneticstrength that reaction chamber is produced when outside in reaction chamber.
They are two years old, because electrostatic clamping device provided by the invention itself just is provided with limit magnet, and when being arranged at this electrostatic clamping device in the reaction chamber of semiconductor processing equipment, it can produce stronger magneticstrength in reaction chamber, thereby need not as prior art, to have the limit magnet of big remanent magnetism and in reaction chamber, obtain stronger magneticstrength by setting, therefore, the present invention has the low characteristics of cost.
They are three years old, because electrostatic clamping device itself just is provided with limit magnet, and need not as prior art at the outer setting limit of reaction chamber magnet, therefore need not on the reaction chamber sidewall, to punch or electrostatic clamping device is arranged on the reaction chamber outside, thereby can make the reaction chamber sidewall be used for installing components and parts such as viewing window or vacuum gauge by auxiliary stand is set in addition.And, can also make the structure of reaction chamber outside compact more like this, for external structure design is brought more spaces.Simultaneously, the process that limit magnet is installed and fixed on the electrostatic clamping device is also comparatively easy.
They are four years old, because electrostatic clamping device provided by the invention itself just is provided with limit magnet, thereby, be placed in the reaction chamber of semiconductor processing equipment, can improve the ionization level of target of sputtering technology atom in the reaction chamber, and Distribution of Magnetic Field that can the enlarged cavity chamber interior, and then expansion plasma body zone, make plasma body be evenly distributed on chamber interior, like this, film forming ion will be comparatively even in the distribution of wafer surface, thereby can improve step coverage and thin film deposition homogeneity that hole is filled better.
In addition, itself just is provided with limit magnet electrostatic clamping device provided by the invention, and the cooling system that has such as the electrostatic clamping device of electrostatic chuck itself, this cooling system can also cool off by opposite side magnet, thereby avoids this limit magnet temperature because of surpassing the Curie temperature demagnetization.
Description of drawings
Fig. 1 is the existing structural representation that is used for the semiconductor processing equipment of reactive sputtering;
The structural representation of the semiconductor processing equipment that Fig. 2 provides for first embodiment of the invention; And
The structural representation of the semiconductor processing equipment that Fig. 3 provides for second embodiment of the invention.
Embodiment
For making those skilled in the art person understand technical scheme of the present invention better, electrostatic clamping device provided by the invention and the semiconductor processing equipment of using this electrostatic clamping device are described in detail below in conjunction with accompanying drawing.
See also Fig. 2, semiconductor processing equipment provided by the invention comprises reaction chamber 1, above reaction chamber 1, be provided with target 3, magnetron sputtering source magnet 2 places on this target 3, be provided with electrostatic clamping device provided by the invention below reaction chamber 1, the semiconducter device 4 (such as wafer) of processed/processing just places on this electrostatic clamping device.
Wherein, electrostatic clamping device comprises pedestal 5 and is arranged on the limit magnet of locating on the top pedestal 5 sides 7 that (the limit magnet 7 in the present embodiment is the limit magnet that the limit magnet assemblies is formed, for ease of explanation, in the present embodiment this limit magnet assemblies is also referred to as limit magnet 7).Described limit magnet 7 can be by being spirally connected and/or riveted way is set to the side of pedestal 5, for example, can punch in the side of pedestal 5 and the side of limit magnet 7, and limit magnet 7 is installed to the side of pedestal 5 by screw and/or bolt and/or rivet etc.Certainly, limit magnet 7 also can be set to the side of pedestal 5 by mode bonding, welding.
In actual applications, above-mentioned limit magnet 7 can be a monoblock ringshaped magnet, also can be made of the side surrounding of a plurality of small magnets around pedestal 5, preferably around pedestal 5 these magnet is set equably.And magnetron sputtering source magnet 2 in the present embodiment and limit magnet 7 can be permanent magnet and/or electro-magnet.
By limit magnet 7 being arranged on the side of pedestal 5, can make the magnetic line of force of limit magnet 7 concentrate on reaction chamber inside more, this can either enlarge magneticstrength, can enlarge Distribution of Magnetic Field again, make the Distribution of Magnetic Field of large volume chamber interior more even simultaneously, and then can enlarge the plasma body zone, make the distribution of plasma body also more even, film forming target ion is distributed comparatively equably, so that in technological process, improve step coverage and thin film deposition homogeneity that hole is filled better in wafer surface.This be because, limit magnet 7 and magnetron sputtering source magnet 2 have determined the magnetic line of force of large volume chamber interior to distribute jointly, and in the restriction trajectory of electron motion, prolonged the electronic motion life-span, thereby improved the chamber interior plasma density, change plasma distribution and enlarge the plasma body zone, and then improve target atom, improve the step coverage that hole is filled by this regional ionization probability.And experiment shows, use semiconductor processing equipment shown in Figure 2 after, the sidewall step coverage is increased to more than 5% by 4%.
See also Fig. 3, the semiconductor processing equipment that present embodiment provides comprises reaction chamber 1, above reaction chamber 1, be provided with target 3, magnetron sputtering source magnet 2 places on this target 3, be provided with electrostatic clamping device provided by the invention below reaction chamber 1, the semiconducter device 4 (such as wafer) of processed/processing just places on this electrostatic clamping device.
Wherein, electrostatic clamping device comprises pedestal 5 and is arranged on the limit magnet 8 that pedestal 5 sides are located on the top.Limit magnet 8 in the present embodiment comprises two stacked limit magnet assemblies up and down, each limit magnet assemblies wherein all can adopt the limit magnet 7 in embodiment illustrated in fig. 2, and the polar orientation of each limit magnet assemblies can require change according to actual process.Of particular note, the said stacked limit magnet assemblies that refers to is roughly placed up and down coaxially among the present invention, and for whether maintaining the gap between two neighbouring limit magnet assemblies does not limit.
Locate to be provided with the limit magnet 8 of the limit magnet assemblies that comprises two different sizes in pedestal 5 sides on the top, like this, can produce magnetic field zero zone 9 at marginal position place such as the processed/processing apparatus of wafer etc.There is unique physical property in described magnetic field zero zone 9, and the positive ion in can directing plasma spreads to the edge, thereby makes such as the surface film deposition of the processed/processing apparatus of wafer etc. more even.
And in actual applications, by changing the relative size of pedestal 5 lateral each limit magnet assemblies, position that can controlling magnetic field zone at zero point 9, so that it can roughly be positioned at the required optimum position of different process, thereby satisfy the requirement of different process (for example, different semiconductor alloy interconnection processes).
The mode that installs and fixes as for limit magnet 8, for example can adopt and be spirally connected and/or riveted way and be set to the side of pedestal 5, particularly, can punch in the side of pedestal 5 and the side of limit magnet 8, and limit magnet 8 is installed to the side of pedestal 5 by screw and/or bolt and/or rivet etc.Perhaps, also can limit magnet 8 be set to the side of pedestal 5 by the mode of bonding, welding.Certainly, can also by means of such as the additional fixation device of auxiliary stand and with limit magnet 8 be fixed on pedestal 5 around.
It is to be noted, in actual applications, the position is set not only is confined to the side that is arranged on pedestal described in the previous embodiment of limit magnet, but also can be arranged on the inside of pedestal, perhaps be arranged on the below of pedestal, as long as it can make and has more magnetic line of force in the reaction chamber, and have strong and distribute comparatively uniformly that magnetic field gets final product.
The quantity that further it is pointed out that the limit magnet assemblies that limit magnet is comprised need not be confined to 1 described in the previous embodiment or 2, but also can be for more a plurality of, and in other words, the quantity of the limit magnet assemblies that limit magnet is comprised is N, wherein N 〉=1.And, when the quantity of limit magnet assemblies more than or equal to 2 the time, these limit magnet assemblies position relation each other can need not be confined to stacked up and down described in the previous embodiment, but also can adopt nested mode, for example, the first limit magnet assemblies is set around pedestal, then the second limit magnet assemblies is set again around the first limit magnet assemblies ... and the first limit magnet assemblies and the second limit magnet assemblies can be in same plane, also can not be in same plane.
As for the structure and the formation of each limit magnet assemblies, be similar to aforementioned limit magnet 7 in embodiment illustrated in fig. 2, do not repeat them here.
By foregoing description as can be seen, itself just is provided with limit magnet electrostatic clamping device provided by the invention, like this, when being placed in the reaction chamber of semiconductor processing equipment, can improve the ionization level of target of sputtering technology atom, and Distribution of Magnetic Field that can the enlarged cavity chamber interior, and then expansion plasma body zone, make plasma body be evenly distributed on chamber interior, like this, can change the ion motion direction, make film forming ion more even, thereby can improve step coverage and thin film deposition homogeneity that hole is filled better in the distribution of wafer surface.
And, because electrostatic clamping device itself just is provided with limit magnet, and need not as prior art at the outer setting limit of reaction chamber magnet, therefore need not on the reaction chamber sidewall, to punch or electrostatic clamping device is arranged on the reaction chamber outside, thereby can make the reaction chamber sidewall be used for installing components and parts such as viewing window or vacuum gauge by auxiliary stand is set in addition.And, can also make the structure of reaction chamber outside compact more like this, for external structure design is brought more spaces.Simultaneously, the process that limit magnet is installed and fixed on the electrostatic clamping device is also comparatively easy.
In addition, electrostatic clamping device provided by the invention itself is provided with limit magnet can make remanent magnetism that reaction chamber inside makes full use of described limit magnet (as shown in Figures 2 and 3, the magnetic line of force of described limit magnet most all is enclosed in reaction chamber inside), the magnet that need not very big remanent magnetism so also can obtain stronger magnetic field in reaction chamber, like this, both can reduce cost, can make other technical modules outside the reaction chamber again and be subjected to less or avoid disturbing, thereby keep the works fine performance of these technical modules and instrument such as the instrument that schrittmacher etc. is subject to magneticinterference.And, equally also can cool off by opposite side magnet such as the cooling system that electrostatic clamping device had of electrostatic chuck, thereby avoid this limit magnet temperature because of surpassing the Curie temperature demagnetization.
Have, limit magnet can form magnetic field on the surface such as the processed/processing apparatus of wafer etc. again, and the Distribution of Magnetic Field of wafer surface can improve the plasma density of wafer surface.Some documents point out that also wafer is in the deposit film process, and a small amount of ion pair is arranged, and it bombards, and can improve the close property of matter of film, reduce the internal stress of film, thereby improve the quality of film.For example, electrostatic clamping device provided by the invention and semiconductor processing equipment are applied to PVD (the Physical Vapor Deposition of metallic copper, physical vapor deposition) after the technology, film gauge uniformity is by (WIW, 1 σ %)＜4.0 become＜2.0, and wafer is subjected to the surface plasma bombardment, and membrane stress drops to 0.5Gpa by 0.7Gpa.
Be understandable that above embodiment only is the illustrative embodiments that adopts for principle of the present invention is described, yet the present invention is not limited thereto.For those skilled in the art, without departing from the spirit and substance in the present invention, can make various modification and improvement, these modification and improvement also are considered as protection scope of the present invention.
Claims (10)
1. an electrostatic clamping device comprises pedestal, it is characterized in that: also comprise limit magnet, described limit magnet adopts such set-up mode: promptly, be provided with around described pedestal, and/or be arranged on the inside of described pedestal, and/or be arranged on the below of described pedestal.
2. electrostatic clamping device according to claim 1 is characterized in that, described limit magnet comprises at least one limit magnet assemblies.
3. electrostatic clamping device according to claim 2 is characterized in that, described limit magnet assemblies is and the suitable ring texture of the profile of described pedestal.
4. electrostatic clamping device according to claim 3 is characterized in that, described ring-type limit magnet assemblies is a monoblock ringshaped magnet.
5. electrostatic clamping device according to claim 3 is characterized in that, described ring-type limit magnet assemblies comprises a plurality of magnet, and described a plurality of magnet evenly are provided with and in the form of a ring around described pedestal.
6. according to the described electrostatic clamping device of claim 2 to 5, it is characterized in that described limit magnet assemblies is electro-magnet and/or permanent magnet.
7. electrostatic clamping device according to claim 2, it is characterized in that, described limit magnet assemblies is adopted and is fixed in such a way on the described pedestal: promptly, the mode that is spirally connected and/or riveted joint mode and/or welding process and/or bonding way, and/or be fixed on the described pedestal by means of stationary installation.
8. electrostatic clamping device according to claim 2, it is characterized in that, when described limit magnet assemblies is two or more, these limit magnet assemblies adopt stacked set-up mode and/or nested set-up mode each other, and the relative size of these limit magnet assemblies influences the position in magnetic field zero zone.
9. semiconductor processing equipment, comprise reaction chamber, it is characterized in that the lower position in described reaction chamber is provided with as any described electrostatic clamping device in the claim 1 to 8, in order to produce uniform distribution and the bigger magnetic field of intensity in described reaction chamber inside.
10. semiconductor processing equipment according to claim 9, it is characterized in that, place, top position in described reaction chamber is provided with the required target of depositing operation corresponding to described electrostatic clamping device, and the magnetron sputtering source magnet is set above described target.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008101142767A CN101597789A (en) | 2008-06-02 | 2008-06-02 | Electrostatic clamping device and use the semiconductor processing equipment of this electrostatic clamping device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008101142767A CN101597789A (en) | 2008-06-02 | 2008-06-02 | Electrostatic clamping device and use the semiconductor processing equipment of this electrostatic clamping device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101597789A true CN101597789A (en) | 2009-12-09 |
Family
ID=41419380
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2008101142767A Pending CN101597789A (en) | 2008-06-02 | 2008-06-02 | Electrostatic clamping device and use the semiconductor processing equipment of this electrostatic clamping device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101597789A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103854945A (en) * | 2012-12-05 | 2014-06-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma equipment and reaction chamber thereof |
| CN104746025A (en) * | 2013-12-27 | 2015-07-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Sputtering apparatus |
-
2008
- 2008-06-02 CN CNA2008101142767A patent/CN101597789A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103854945A (en) * | 2012-12-05 | 2014-06-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma equipment and reaction chamber thereof |
| CN104746025A (en) * | 2013-12-27 | 2015-07-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Sputtering apparatus |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100322330B1 (en) | Method and apparatus for ionized sputtering of materials | |
| US6244211B1 (en) | Plasma processing apparatus | |
| JP4896164B2 (en) | Plasma processing equipment | |
| JP2001140065A (en) | Ionized metal plasma copper vapor deposition improved in capacity of grain in thin film | |
| EP2045353B1 (en) | Capacitive-coupled magnetic neutral loop plasma sputtering system | |
| US8911602B2 (en) | Dual hexagonal shaped plasma source | |
| KR101146071B1 (en) | Magnetically enhanced capacitive plasma source for ionized physical vapor deposition | |
| JP2001257199A (en) | Plasma processing method and device thereof | |
| US20110220494A1 (en) | Methods and apparatus for magnetron metallization for semiconductor fabrication | |
| US6444099B1 (en) | Ionizing sputtering method | |
| JP2001192824A (en) | Sputtering system and film deposition method | |
| CN101978095A (en) | Coaxial microwave assisted deposition and etch systems | |
| WO2011002058A1 (en) | Method for depositing thin film | |
| WO2010004890A1 (en) | Method for thin film formation | |
| US8431033B2 (en) | High density plasma etchback process for advanced metallization applications | |
| KR101356918B1 (en) | Magnetron sputtering apparatus | |
| KR20120023035A (en) | Film-forming method and film-forming apparatus | |
| US20050098427A1 (en) | RF coil design for improved film uniformity of an ion metal plasma source | |
| CN101597789A (en) | Electrostatic clamping device and use the semiconductor processing equipment of this electrostatic clamping device | |
| JP2010248576A (en) | Magnetron sputtering apparatus | |
| JP4283360B2 (en) | Plasma processing equipment | |
| JPS6187869A (en) | Sputter device | |
| WO2018143164A1 (en) | Plasma generating device, plasma sputtering device, and plasma sputtering method | |
| US6244210B1 (en) | Strength coil for ionized copper plasma deposition | |
| KR20200051947A (en) | Sputtering apparatus |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20091209 |