CN112738968A - Plasma generating device and semiconductor processing equipment - Google Patents
Plasma generating device and semiconductor processing equipment Download PDFInfo
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- CN112738968A CN112738968A CN202011508629.9A CN202011508629A CN112738968A CN 112738968 A CN112738968 A CN 112738968A CN 202011508629 A CN202011508629 A CN 202011508629A CN 112738968 A CN112738968 A CN 112738968A
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- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
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- H—ELECTRICITY
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
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Abstract
The invention provides a plasma generating device and semiconductor processing equipment. The device includes: a reaction chamber having a gas inlet and a gas outlet; the reaction chamber includes a plasma generating structure comprising: the gas-liquid separation device comprises a first electrode part and a second electrode part, wherein a first gas transmission channel is arranged in the first electrode part, a second gas transmission channel is arranged in the second electrode part, the first gas transmission channel is communicated with a gas inlet and the second gas transmission channel of a reaction chamber, and the second gas transmission channel is communicated with a gas outlet of the reaction chamber; the first electrode part and the second electrode part are used for discharging in the first gas transmission channel and in a spacing area between the first electrode part and the second electrode part under the control of voltage between two direct current power supply ends so as to excite the reaction gas in the first gas transmission channel and in the spacing area into plasma. The plasma generating device provided by the embodiment of the invention can be driven by a direct-current power supply, does not need to be provided with a matching network, and has the advantages of simple structure and low cost.
Description
Technical Field
The invention relates to the technical field of semiconductor processing, in particular to a plasma generating device and semiconductor processing equipment.
Background
The Remote Plasma Source (RPS) is a device for exciting gas to generate Plasma, and is usually used as a component of semiconductor processing equipment and specially provides activated gas and free radicals for a reaction chamber.
The excitation of plasma includes direct current discharge, radio frequency capacitive coupling discharge, radio frequency inductive coupling discharge and microwave surface wave excitation, etc. in order to ensure the generated plasma density is high enough, the existing remote plasma source usually adopts radio frequency inductive coupling discharge and microwave surface wave excitation to excite plasma, but the systems required by the two excitation modes are complex and expensive.
Disclosure of Invention
The invention aims to solve at least one technical problem in the prior art, and provides a plasma generating device and semiconductor processing equipment.
In order to achieve the above object, the present invention provides a plasma generating apparatus applied to a semiconductor processing device, wherein the plasma generating apparatus comprises a reaction chamber, the reaction chamber having a gas inlet and a gas outlet;
the reaction chamber includes a plasma generating structure comprising: a first electrode part and a second electrode part which are arranged at intervals along the direction from the gas inlet to the gas outlet of the reaction chamber;
the first electrode part is provided with at least one first gas transmission channel, the second electrode part is provided with at least one second gas transmission channel, the first end of the first gas transmission channel is communicated with the gas inlet of the reaction chamber, the second end of the first gas transmission channel is communicated with the first end of the second gas transmission channel, and the second end of the second gas transmission channel is communicated with the gas outlet of the reaction chamber;
the first electrode part and the second electrode part are used for discharging in the first gas transmission channel and in the interval area between the first electrode part and the second electrode part under the control of the voltage between the first direct current power supply end and the second direct current power supply end so as to excite the reaction gas in the first gas transmission channel and in the interval area into plasma.
Optionally, the first gas delivery channel is a cylindrical channel penetrating the first electrode portion, and the second gas delivery channel is a cylindrical channel penetrating the second electrode portion.
Optionally, the first electrode part comprises a plurality of first electrode plates arranged at intervals, and the interval between every two adjacent first electrode plates is used as the first gas transmission channel;
the second electrode part comprises a plurality of second electrode plates which are arranged at intervals, and the interval between every two adjacent second electrode plates is used as the second gas transmission channel.
Optionally, a preset voltage difference exists between the voltage loaded by the first electrode plate and the voltage loaded by the second electrode plate.
Optionally, the first gas transmission channel and the second gas transmission channel correspond to each other one by one, and the aperture of the second gas transmission channel is smaller than or equal to the aperture of the first gas transmission channel.
Optionally, a plurality of first gas transmission channels are arranged in the first electrode part, and the first gas transmission channels are arranged in an array.
Optionally, the aperture of the gas inlet of the reaction chamber is smaller than the aperture of the first gas transmission channel.
Optionally, the gas inlet is located at the top of the reaction chamber, and the gas outlet is located at the bottom of the reaction chamber; the plasma generating structure is disposed on an inner wall of the reaction chamber.
Optionally, a plurality of magnetic member sets are arranged on the outer wall of the reaction chamber, and are arranged along the axial direction of the reaction chamber, and each magnetic member set comprises a plurality of magnetic members arranged along the circumferential direction of the reaction chamber;
wherein, the polarity of any two adjacent magnetic members arranged in the axial direction of the reaction chamber is different, and/or the polarity of any two adjacent magnetic members arranged in the circumferential direction of the reaction chamber is different.
Optionally, a plurality of adsorption holes are arranged on the second electrode part, and inlets of the adsorption holes face the first electrode part.
Optionally, one end of the first electrode portion, which is close to the gas inlet of the reaction chamber, is provided with a flow equalizing structure, and the first end of the first gas transmission channel is communicated with the gas inlet of the reaction chamber through the flow equalizing structure.
The invention also provides semiconductor processing equipment, which comprises a process chamber and the plasma generating device;
and the gas outlet of the plasma generating device is communicated with the gas inlet of the process chamber, and the plasma generating device is used for conveying plasma into the process chamber so as to process a workpiece to be processed in the process chamber.
The plasma generating device of the invention has the following beneficial effects:
the plasma generating device provided by the embodiment of the invention is driven by a direct-current power supply, and a matching network is not required to be arranged, so that the whole structure of the plasma generating device is simple, and the cost is low; meanwhile, the plasma generating device provided by the embodiment of the invention utilizes hollow cathode discharge, so that the density of generated plasma is increased, and the density of the generated plasma by the plasma generating device can meet higher requirements.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. In the drawings:
FIG. 1a is a schematic diagram of an exemplary plasma generating device;
FIG. 1b is a schematic diagram of another exemplary plasma generating device;
FIG. 1c is an enlarged view of area A of FIG. 1 b;
FIG. 2a is a schematic structural diagram of a plasma generation apparatus according to an embodiment of the present invention;
FIG. 2b is one of the bottom views of the plasma generating structure according to the embodiment of the present invention;
fig. 3a is a second schematic structural diagram of a plasma generation apparatus according to an embodiment of the present invention;
fig. 3b is a second bottom view of the plasma generating structure according to the embodiment of the present invention;
FIG. 4 is a schematic structural diagram of a plasma generating apparatus having a plurality of first gas transmission channels according to an embodiment of the present invention;
FIG. 5 is a top view of a plasma generating device having a plurality of first gas delivery channels according to an embodiment of the present invention;
FIGS. 6a and 6b are plan views of a reaction chamber provided in an embodiment of the present invention;
FIGS. 7a to 7c are schematic views of a uniform flow hole in a uniform flow structure provided by an embodiment of the present invention;
FIG. 8 is a schematic diagram of a semiconductor processing apparatus according to an embodiment of the present invention;
fig. 9 is a schematic diagram of a signal flow of a plasma generation apparatus according to an embodiment of the present invention.
Detailed Description
The following detailed description of embodiments of the invention refers to the accompanying drawings. It should be understood that the detailed description and specific examples, while indicating the present invention, are given by way of illustration and explanation only, not limitation.
In an example, a remote plasma generating device based on rf/microwave discharge is provided, fig. 1a is a schematic structural diagram of an example plasma generating device, and as shown in fig. 1a, the remote plasma generating device (RPS)100 includes: a control unit 101, a power supply unit 102, a matching unit 103, and a reaction chamber 104. The control unit 101 executes a set operation flow through an analog circuit or a digital sub-circuit, for example, controls the power supply unit 102 to supply an electric signal, and controls the matching unit 103 to perform impedance matching. The power supply unit 102 can convert the 50Hz alternating current into radio frequency or microwave power (typically, the radio frequency is 400kHz, 13.56MHz, and the microwave frequency is 2.45GHz) required for operation, and adjust the output power according to the instruction sent by the control unit 101. The matching unit 103 includes a matching network for matching impedance between the reaction chamber 104 and the power supply unit 102 to ensure maximum power transfer into the reaction chamber 104. Reaction gases (such as He, Ar, H2, N2, O2, NF3 and the like) are introduced into the reaction chamber 104 through the gas inlet pipe 105, the reaction gases are excited in the reaction chamber 104 to form plasma, the plasma enters the process chamber 107 through the gas outlet pipe 106, and wafers or substrates are processed in the process chamber 107 or deposited films on the inner wall of the process chamber 107 are removed.
In this example, the generation of plasma by using rf/microwave causes high electromagnetic radiation, and requires shielding, and the rf/microwave power supply unit 102 is expensive, and the matching unit 103 is also required, so the whole device has a complicated structure and is expensive.
In another example, a plasma generation device using a hollow cathode discharge is provided, in which an aston dark area, a cathode dark area (kruse dark area), a negative glow area, and the like are formed over a cathode during discharge. The plasma generation density in the negative glow area is higher, and the hollow cathode can enable the negative glow area above the cathode to be overlapped, so that the plasma density in the central area of the hollow cathode is improved. Fig. 1b is a schematic structural diagram of another example plasma generation apparatus, and as shown in fig. 1b, the plasma generation apparatus 10 in this example includes:
an anode electrode 11, a cathode electrode 12, a through hole 120 provided on the cathode electrode 12, a gas supply device 13, and a radio frequency ac power supply 14. The gas supply device 13 introduces the process gas 100 between the anode electrode 11 and the cathode electrode 12. The rf ac power supply 14 supplies rf signals to the anode electrode 11 and the cathode electrode 12, and excites the process gas 100 into plasma between the anode electrode 11 and the cathode electrode 12 by capacitively coupled rf discharge. At the same time, hollow cathode discharge occurs in the through-hole 120 provided in the cathode electrode 12, thereby increasing the density of the generated plasma. Fig. 1c is an enlarged view of the area a in fig. 1b, and as shown in fig. 1c, S represents the distance between the anode and cathode electrodes 11 and 12, when the rf ac power supply 14 supplies the rf signal to the anode electrode 11 and the cathode electrode 12, the glow discharge area 101 is formed in the area between the anode electrode 11 and the cathode electrode 12, and the hollow cathode discharge area 102 is formed in the through hole 120 of the cathode electrode 12. A sheath region 200 is formed between the glow discharge region 101 and the anode electrode 11 and the cathode electrode 12. A sheath region 200 is also formed between the hollow cathode discharge region 102 and the through-hole 120.
In this example, the hollow cathode discharge is realized by providing the micro-holes on the cathode electrode 12, however, the rf power supply is still used in this example, which is expensive, and the micro-holes on the cathode electrode 12 are difficult to process, which is not favorable for reducing the cost.
In view of the above, an embodiment of the present invention provides a plasma generating apparatus applied to a semiconductor processing apparatus, fig. 2a is a schematic structural diagram of the plasma generating apparatus provided in the embodiment of the present invention, fig. 3a is a second schematic structural diagram of the plasma generating apparatus provided in the embodiment of the present invention, and referring to fig. 2a and fig. 3a, the plasma generating apparatus includes a reaction chamber, and the reaction chamber has a gas inlet 1 and a gas outlet 2. The reaction chamber includes a plasma generating structure comprising: a first electrode part 31 and a second electrode part 32 which are arranged at intervals in the direction from the gas inlet 1 to the gas outlet 2 of the reaction chamber. At least one first gas transmission channel 41 is arranged in the first electrode part 31, at least one second gas transmission channel 42 is arranged in the second electrode part 32, the first end of the first gas transmission channel 41 is communicated with the gas inlet 1 of the reaction chamber, the second end of the first gas transmission channel 41 is communicated with the first end of the second gas transmission channel 42, and the second end of the second gas transmission channel 42 is communicated with the gas outlet 2 of the reaction chamber. The first electrode part 31 is connected with a first direct current power supply end V1, the second electrode part 32 is connected with a second direct current power supply end GND, and the first electrode part 31 and the second electrode part 32 are used for discharging in the first gas transmission channel 41 and in the interval area between the first electrode part 31 and the second electrode part 32 under the control of the voltage between the first direct current power supply end V1 and the second direct current power supply end GND so as to excite the reaction gas in the first gas transmission channel 41 and in the interval area into plasma.
Specifically, the first dc power supply terminal V1 may be a cathode of a dc power supply, the second dc power supply terminal GND may be a ground terminal, and the first electrode part 31 may be connected to the first dc power supply terminal V1 through the connection part 33. The hollow cathode discharge is a special glow discharge, and the generation condition is related to the structure of the first electrode part 31 (specifically, the shape of the first gas transmission channel 41), and in the embodiment of the present invention, the first gas transmission channel 41 may be a via hole or a slit penetrating through the first electrode part 31. The aperture of the first gas transmission channel 41 can be determined according to actual needs, but the aperture of the first gas transmission channel 41 should be at least more than twice the width of the cathode region, wherein the width of the cathode region is related to the voltage applied to the first electrode part 31, and can be determined by plasma diagnosis. The discharge in the first gas transmission channel 41 means that a hollow cathode discharge is performed in the first gas transmission channel 41. When the first electrode part 31 is conducted with the first dc power supply terminal V1 and the second electrode part 32 is conducted with the second dc power supply terminal GND, since the first gas transmission channel 41 generates hollow cathode discharge and electrons oscillate in the first gas transmission channel 41, the probability of collision processes such as ionization, excitation and the like in the first gas transmission channel 41 is improved, thereby greatly increasing the density of the generated plasma.
In summary, the plasma generation device according to the embodiment of the present invention is driven by a dc power supply, and a matching network is not required, so that the plasma generation device has a simple overall structure and a low cost, and can start and maintain discharge as long as the lowest electric field intensity of discharge is achieved; meanwhile, the plasma generating device provided by the embodiment of the invention utilizes hollow cathode discharge, so that the density of generated plasma is increased, and the density of the generated plasma by the plasma generating device can meet higher requirements. In addition, the plasma generation device according to the embodiment of the present invention uses the first gas transmission channel 41 to realize hollow cathode discharge, the aperture of the first gas transmission channel 41 can be set to be larger (centimeter level), and the plasma generation device is suitable for machining, and compared with the example shown in fig. 1b in which the micropores are formed on the electrode plate, the plasma generation device according to the embodiment of the present invention has a simpler manufacturing process.
It should be noted that, in the embodiment of the present invention, the hollow cathode discharge may be divided into cold cathode discharge and hot cathode discharge, the cold cathode discharge mainly depends on the electric field to drive ions to bombard the metal cathode to generate secondary electron emission to sustain discharge, and the hot cathode discharge is to emit thermal electrons at high temperature to sustain or enhance discharge. Optionally, the embodiment of the invention adopts cold cathode discharge, so that the limitation of material selection can be avoided, and the production cost is reduced.
In some embodiments, the first gas delivery channel 41 is a cylindrical channel extending through the first electrode portion 31, and the second gas delivery channel 42 is a cylindrical channel extending through the second electrode portion 32, as will be described in detail with reference to fig. 2a to 7 c. Wherein, the shape of the cross section of the first gas transmission channel 41 can be set to be circular, rectangular, oval or other polygonal shapes. Alternatively, in the embodiment of the present invention, the cross-sectional shape of the first gas delivery channel 41 may be set to be circular, so that the maximum hollow cathode discharge area can be obtained.
In the embodiment of the present invention, taking the plasma generating structure including one first gas transmission channel 41 as an example, and fig. 2b as one of the bottom views of the plasma generating structure provided in the embodiment of the present invention, as shown in fig. 2a and fig. 2b, the first electrode portion 31 may be a tubular electrode, and specifically may be a circular tube or a polygonal tube, and the like, which is not limited herein. The second electrode portion 32 may be a ring-shaped electrode. Wherein, the tubular electrode may mean that the height of the electrode is larger than the diameter of the electrode, and the annular electrode may mean that the height of the electrode is smaller than the diameter of the electrode. The material of the first electrode portion 31 and the second electrode portion 32 may include a metal such as iron, aluminum, or copper, or an alloy obtained by combining the above metals.
In some embodiments, the first gas transmission channel 41 and the second gas transmission channel 42 correspond to each other, and the aperture of the second gas transmission channel 42 is smaller than or equal to the aperture of the first gas transmission channel 41.
In the embodiment of the present invention, the first gas delivery passage 41 and the second gas delivery passage 42 may be aligned one to one, the outer diameter of the second electrode portion 32 is not smaller than the outer diameter of the first electrode portion 31, and the inner diameter of the second electrode portion 32 is not larger than the inner diameter of the first electrode portion 31. Because the first gas transmission channel 41 and the second gas transmission channel 42 are aligned one to one, the surface of the first electrode part 31 facing the second electrode part 32 is also aligned with the surface of the second electrode part 32 facing the first electrode part 31, the facing area between the first electrode part 31 and the second electrode part 32 can be determined according to actual needs, but the facing area between the first electrode part 31 and the second electrode part 32 can be set as large as possible, so that the stable discharge between the first electrode part 31 and the second electrode part 32 is ensured. In the embodiment of the present invention, the distance between the first electrode portion 31 and the second electrode portion 32 can be determined according to actual needs, and generally, the smaller the distance between the first electrode portion 31 and the second electrode portion 32 is, the easier the ignition between the first electrode portion 31 and the second electrode portion 32 is, and the distance between the first electrode portion 41 and the second electrode portion 32 can be usually set to the centimeter level.
In some embodiments, the gas inlet 1 is located at the top of the reaction chamber and the gas outlet 2 is located at the bottom of the reaction chamber. The plasma generating structure is disposed on an inner wall of the reaction chamber.
In the embodiment of the present invention, the sidewall 5 of the reaction chamber includes an insulating part made of an insulating material, and the first electrode part 31 may be disposed on the insulating part of the sidewall 5, and the insulating part may insulate and space the first electrode part 31 from the outside. Further, the insulating portion may also cover a spaced region between the first electrode portion 31 and the second electrode portion 32, thereby also spacing the spaced region between the first electrode portion 31 and the second electrode portion 32 from the outside, thereby preventing the first electrode portion 31 and the second electrode portion 32 from generating a arcing. Alternatively, in the present embodiment, the second electrode portion 32 may also be disposed on an insulating portion of the sidewall 5, so that the second electrode portion 32 is insulated and spaced from the outside by the insulating portion.
In some embodiments, the outer wall of the reaction chamber is provided with a plurality of magnetic member sets, each magnetic member set includes a plurality of magnetic members 6 arranged along the circumferential direction of the reaction chamber, and the plurality of magnetic member set sets are arranged along the axial direction of the reaction chamber. Wherein, the polarity of any two adjacent magnetic members 6 arranged in the axial direction of the reaction chamber is different, and/or the polarity of any two adjacent magnetic members 6 arranged in the circumferential direction of the reaction chamber is different.
In the embodiment of the present invention, the magnetic member 6 may be disposed corresponding to the position of the first electrode portion 31, and the magnetic pole surface of the magnetic member 6 may be perpendicular to the surface of the sidewall 5. The magnetic induction lines generated by the magnetic member 6 vertically pass through the outer surface of the first electrode part 31 (i.e. the surface of the first electrode part 31 facing the side wall 5) and are closed on the inner surface of the first electrode part 31, so that a magnetic field is formed on the inner surface of the first electrode part 31 to confine electrons, increase the collision between the electrons and the reaction gas, and enhance the discharge of the cathode region.
The manner in which the plurality of first gas delivery passages are provided in the embodiment of the present invention will be described in detail below. Fig. 4 is a schematic structural diagram of a plasma generation apparatus having a plurality of first gas transmission channels according to an embodiment of the present invention, fig. 5 is a top view of the plasma generation apparatus having a plurality of first gas transmission channels according to an embodiment of the present invention, and in some embodiments, as shown in fig. 4 and fig. 5, the area of the hollow cathode discharge may be increased by the plurality of first gas transmission channels 41, specifically, the first electrode portion 31 has a plurality of first gas transmission channels 41 disposed therein, and the plurality of first gas transmission channels 41 are arranged in an array.
In the embodiment of the invention, the plurality of first gas transmission channels can be arranged in a honeycomb shape, so that the cathode discharge area can be increased, and the density of generated plasma can be improved.
In the embodiment of the present invention, the first electrode part 31 is detachably disposed on the sidewall 5 of the reaction chamber, for example, the first electrode part 31 may be detachably connected with the sidewall 5 of the reaction chamber by a screw T. In this way, the first electrode part 31 can be replaced for different process types and reflecting gas types, so that different numbers of first gas transmission channels 41 are arranged for different processes, and further, the hollow cathode discharge area is changed, so as to adjust the density of the generated plasma on the basis of the same gas inflow.
Fig. 6a and 6b are plan views of a reaction chamber provided in an embodiment of the present invention, and as shown in fig. 5, 6a and 6b, in some embodiments, the reaction chamber may have a rectangular, circular or polygonal shape.
In some embodiments, the aperture of the gas inlet 1 of the reaction chamber is smaller than the aperture of the first gas transmission channel 41. The gas outlet 2 of the reaction chamber may be in communication with a process chamber in which a workpiece to be processed is disposed.
In the embodiment of the invention, the reaction gas enters the first gas transmission channel 41 from the gas inlet, the hollow cathode discharge occurs in the first gas transmission channel 41, the plasma is formed, and the plasma enters the process chamber from the gas outlet so as to process the workpiece to be processed in the process chamber.
The inventors have found in their studies that when the plasma bombards the surface of the first electrode portion 31, it results in the generation of particles which, following entry of the plasma into the process chamber, can adversely affect the process. Therefore, as shown in fig. 4, in some specific embodiments, the second electrode portion 32 is provided with a plurality of adsorption holes 7, and the inlets of the adsorption holes 7 face the first electrode portion 31. In the embodiment of the present invention, the adsorption holes 7 may be blind holes or through holes, the adsorption holes 7 may be uniformly distributed or non-uniformly distributed on the second electrode portion 32, and the adsorption holes 7 may adsorb passing particulate matters, so as to effectively filter the particulate matters.
In some embodiments, the end of the first electrode portion 31 close to the gas inlet 1 of the reaction chamber is provided with a uniform flow structure 8, and the first end of the first gas transmission channel 41 is communicated with the gas inlet 1 of the reaction chamber through the uniform flow structure 8.
In the embodiment of the present invention, when the hollow cathode discharge is performed, the ionization mainly occurs in the area of the first gas transmission channel 41 near the surface of the first electrode portion 31, and in order to stabilize the discharge, the gas flow field in the first gas transmission channel 41 is required to be stable, and optionally, the gas flow rate in the first gas transmission channel 41 near the center of the first gas transmission channel 41 may be made larger, and the gas flow rate near the edge may be made smaller.
Fig. 7a to 7c are schematic diagrams of flow equalizing holes in a flow equalizing structure according to an embodiment of the present invention, and as shown in fig. 7a and 7c, in some embodiments, the flow equalizing structure 8 includes a plurality of flow equalizing holes, which may be uniformly distributed or non-uniformly distributed, for example, when the flow equalizing holes are uniformly distributed, the diameter of the flow equalizing hole in the middle is larger, and the diameter of the flow equalizing hole in the edge is smaller; when the uniform distribution is non-uniform, the uniform flow holes at the center are densely distributed, and the uniform flow holes at the edges are sparsely distributed, so that a laminar flow state with a large central flow rate and a small edge flow rate is formed in the first gas transmission channel 41, and the purpose of enhancing the discharge stability is achieved. As shown in fig. 7a, a plurality of uniform flow holes are concentrically arranged at a position corresponding to the center of the first gas delivery passage 41; as shown in fig. 7b, a plurality of uniform flow holes are uniformly arranged at positions corresponding to the first gas delivery passage 41; as shown in fig. 7c, the diameters of at least two of the plurality of uniform flow holes are different, and specifically, the diameters of the plurality of uniform flow holes may be larger at a position corresponding to the center of the first gas delivery passage 41 and smaller at a position corresponding to the edge of the first gas delivery passage 41.
By adopting the uniform flow structure 8, the stability of the gas flow in the first gas transmission channel 41 can be enhanced, and the plasma discharge is more stable.
In some embodiments, the flow uniforming structure 8 may also have a predetermined distance from the top of the reaction chamber, so that the space between the flow uniforming structure 8 and the top of the reaction chamber can perform a flow uniforming function, thereby making the gas flow to each first gas transmission channel 41 relatively uniform, and further improving the uniformity of the gas flow in different first gas transmission channels 41.
Fig. 3b is a second bottom view of the plasma generating structure according to the embodiment of the present invention, and as shown in fig. 3a and fig. 3b, in other embodiments, the first electrode portion 31 includes a plurality of first electrode plates 311 disposed at intervals, and the interval between every two adjacent first electrode plates is used as the first gas transmission channel 41. The second electrode portion 32 includes a plurality of second electrode plates 321 arranged at intervals, and the interval between every two adjacent second electrode plates is used as the second gas transmission channel 42.
In the embodiment of the present invention, the plurality of first electrode plates 311 may have the same shape and size, and the plurality of first electrode plates 311 are parallel to each other. The side surface of each first electrode plate 311 includes a first side surface and a second side surface, and the first side surfaces of two adjacent first electrode plates 311 are oppositely disposed. The first side of the first electrode plate 311 may be rectangular, circular or polygonal, and the material of the first electrode plate 311 may be metal such as iron, aluminum, copper, or an alloy of the above metals. The first gas transmission passages 41 and the second gas transmission passages 42 are aligned one to one, and the bottom surface 311a of the first electrode plate 311 is aligned one to one with the top surface of the second electrode plate 321. The material of the second electrode plate 321 may be iron, aluminum, copper, or other metals, or alloys of the above metals. The top surface of the second electrode plate 321 has the same shape as the bottom surface of the first electrode plate 311.
It should be noted that, in the embodiments of the present invention, the specific arrangement of the plasma generation structure can refer to the above-mentioned manner, and therefore, the detailed description thereof is omitted here.
In some embodiments, the voltages applied to the two adjacent first electrode plates 311 may be the same or different, and optionally, in an embodiment of the present invention, a preset voltage difference is provided between the voltages applied to the two adjacent first electrode plates. For example, the first power terminal V1 may have two power interfaces, which respectively provide dc power with different magnitudes, and for two adjacent first electrode plates 311, one of the first electrode plates 311 may be connected to one of the interfaces of the first power terminal V1 through the connection portion 33, and the other first electrode plate 311 may be connected to the other interface of the first power terminal V1 through the connection portion 34. Thus, a pressure difference is generated between two adjacent first electrode plates 311, which is helpful for collecting metal particles sputtered from the first electrode part 31, and reduces particle contamination.
In summary, the plasma generating device according to the embodiment of the present invention can be driven by dc, so that a matching network is not required, the structure is simple, the manufacturing cost can be effectively reduced, and meanwhile, the dc driving can avoid the radiation problem caused by the rf driving, thereby omitting the radiation protection structure and further reducing the manufacturing cost.
The present invention further provides a semiconductor processing apparatus, and fig. 8 is a schematic structural diagram of the semiconductor processing apparatus according to the embodiment of the present invention, and as shown in fig. 8, the semiconductor processing apparatus includes a process chamber 206 and the above-mentioned plasma generation device (RPS) 200.
The gas inlet of the plasma generating device 200 is communicated with a gas source through a gas inlet pipe 204, the gas outlet of the plasma generating device 200 is communicated with the gas inlet of the process chamber 206 through a gas outlet pipe 205, and the plasma generating device 200 is used for delivering plasma into the process chamber 206 so as to process a workpiece to be processed in the process chamber 206.
In some embodiments, the plasma generating apparatus 200 further comprises a control unit 201, a power supply unit 202 and a reaction chamber 203, the power supply unit 202 comprising the first and second dc power supply terminals described above. The control unit 201 controls the power supply unit 202 to supply an electric signal by executing a set operation flow through an analog circuit or a digital circuit. For example, the power supply unit 202 may convert 50Hz alternating current into direct current required for operation, and the power supply unit 202 may adjust the magnitude of the output voltage or the magnitude of power according to an instruction issued by the control unit 201. The power supply unit 202 may further include a power sensor, a voltage sensor, a current sensor, and the like, the sensors may be used to detect the state of the plasma in the reaction chamber 203, and signals detected by the sensors may be fed back to the control unit 201 in real time, so that the control unit 201 dynamically adjusts the power supply unit 202 according to the signals detected by the sensors, and the power supply unit 202 is ensured to be in an optimal working state. The reaction gas introduced into the reaction chamber 203 may include one or more of He, Ar, H2, N2, O2, and NF3, and is excited in the reaction chamber 203 to form plasma, and enters the process chamber 206 through the gas outlet pipe 205, and the wafer or substrate is processed in the process chamber 206, or the deposited film on the inner wall of the process chamber 206 is removed. A pressure control unit (not shown) is further disposed in the process chamber 206, and the reaction chamber 203 is communicated with the process chamber 206, so that the reaction chamber 203 can be evacuated and controlled by the pressure control unit in the process chamber 206.
In the embodiment of the present invention, the control unit 201 may use a microcontroller chip as a core, and implement communication with the outside and the power supply unit 202 by combining a digital circuit and an analog circuit. The power supply unit 202 includes a transformer circuit, a rectifier circuit, and the like, and supplies a dc signal necessary for gas discharge. The devices of the units can be selected and designed according to the maximum power, the voltage resistance and the current resistance. Fig. 9 is a schematic diagram of a signal flow of a plasma generation apparatus according to an embodiment of the present invention, and as shown in fig. 9, a work flow of the plasma generation apparatus may include: the control unit 201 receives an external instruction through an external communication interface, such as a set value of a switch, power, voltage or current of the power supply unit 202, wherein a microcontroller chip in the control unit 201 executes an algorithm program embedded therein to perform operation, the instruction obtained by the operation is sent to the power supply unit 202, the power supply unit 202 acts after receiving the instruction to adjust output power, voltage or current, and the like, the control unit 201 continuously receives a sensor signal from the power supply unit 202, and operates and controls the power supply unit 202 in real time until a monitoring parameter (such as current, voltage or power) meets a set requirement. The control unit 201 transmits the received sensor signal of the power supply unit 202 to the outside (for example, control a display screen or other terminal devices) in real time, and displays the current working state of the plasma generating apparatus 200 in real time.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
Claims (12)
1. A plasma generating device is applied to semiconductor processing equipment and is characterized by comprising a reaction chamber, a gas inlet, a gas outlet and a gas outlet, wherein the reaction chamber is provided with the gas inlet and the gas outlet;
the reaction chamber includes a plasma generating structure comprising: a first electrode part and a second electrode part which are arranged at intervals along the direction from the gas inlet to the gas outlet of the reaction chamber;
the first electrode part is provided with at least one first gas transmission channel, the second electrode part is provided with at least one second gas transmission channel, the first end of the first gas transmission channel is communicated with the gas inlet of the reaction chamber, the second end of the first gas transmission channel is communicated with the first end of the second gas transmission channel, and the second end of the second gas transmission channel is communicated with the gas outlet of the reaction chamber;
the first electrode part and the second electrode part are used for discharging in the first gas transmission channel and in a spacing area between the first electrode part and the second electrode part under the control of voltage between the first direct current power supply end and the second direct current power supply end so as to excite reaction gas in the first gas transmission channel and in the spacing area into plasma.
2. The plasma generating apparatus according to claim 1, wherein the first gas delivery passage is a cylindrical passage that penetrates the first electrode portion, and the second gas delivery passage is a cylindrical passage that penetrates the second electrode portion.
3. The plasma generation device according to claim 1, wherein the first electrode part comprises a plurality of first electrode plates arranged at intervals, and the interval between every two adjacent first electrode plates is used as the first gas transmission channel;
the second electrode part comprises a plurality of second electrode plates which are arranged at intervals, and the interval between every two adjacent second electrode plates is used as the second gas transmission channel.
4. A plasma-generating device according to claim 3, characterized in that the voltage to which the first electrode plate is applied and the voltage to which the second electrode plate is applied have a preset voltage difference therebetween.
5. A plasma-generating device according to any of claims 1 to 4, characterized in that the first gas transmission channel and the second gas transmission channel correspond one to one, and the aperture of the second gas transmission channel is smaller than or equal to the aperture of the first gas transmission channel.
6. A plasma-generating device according to any of claims 1 to 4, characterized in that the first electrode portion is provided with a plurality of the first gas delivery channels arranged in an array.
7. A plasma-generating device according to any of claims 1 to 4, characterized in that the aperture of the gas inlet of the reaction chamber is smaller than the aperture of the first gas-conveying channel.
8. A plasma-generating device according to any of claims 1 to 4, characterized in that the gas inlet is located at the top of the reaction chamber and the gas outlet is located at the bottom of the reaction chamber; the plasma generating structure is disposed on an inner wall of the reaction chamber.
9. The plasma generating apparatus according to any one of claims 1 to 4, wherein a plurality of magnetic member sets are provided on an outer wall of the reaction chamber, the plurality of magnetic member sets being arranged in an axial direction of the reaction chamber, each of the magnetic member sets including a plurality of magnetic members arranged in a circumferential direction of the reaction chamber;
wherein, the polarity of any two adjacent magnetic members arranged in the axial direction of the reaction chamber is different, and/or the polarity of any two adjacent magnetic members arranged in the circumferential direction of the reaction chamber is different.
10. The plasma generation apparatus according to any one of claims 1 to 4, wherein a plurality of adsorption holes are provided on the second electrode portion, and an inlet of the adsorption hole faces the first electrode portion.
11. The plasma generation device according to any one of claims 1 to 4, wherein an end of the first electrode portion near an inlet port of the reaction chamber is provided with a flow equalizing structure, and a first end of the first gas delivery channel communicates with the inlet port of the reaction chamber through the flow equalizing structure.
12. A semiconductor processing apparatus comprising a process chamber and a plasma generating device according to any one of claims 1 to 11;
and the gas outlet of the plasma generating device is communicated with the gas inlet of the process chamber, and the plasma generating device is used for conveying plasma into the process chamber so as to process a workpiece to be processed in the process chamber.
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