CN110484895A - Chamber combination and reaction chamber - Google Patents
Chamber combination and reaction chamber Download PDFInfo
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- CN110484895A CN110484895A CN201810457537.9A CN201810457537A CN110484895A CN 110484895 A CN110484895 A CN 110484895A CN 201810457537 A CN201810457537 A CN 201810457537A CN 110484895 A CN110484895 A CN 110484895A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
- C23C16/45591—Fixed means, e.g. wings, baffles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/507—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/517—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
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- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
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Abstract
It includes: electrode plate that the present invention, which provides a kind of chamber combination and reaction chamber, the chamber combination, is electrically connected with radio frequency source, and air inlet is provided on electrode plate；Uniform flow component, uses insulating materials to make, and collectively forms uniform flow space with electrode plate, and air inlet is connected to uniform flow space, and multiple gas outlets are provided on uniform flow component, and gas outlet is connected to uniform flow space and reaction chamber respectively.Chamber combination provided by the invention avoids generating hollow cathode discharge, so as to improve the stability of plasma.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, and in particular, to a kind of chamber combination and reaction chamber.
Background technique
In semiconductor processes field, as the geometric dimension of electronic device constantly reduces and the closeness of device is continuous
It improves, characteristic size and depth-width ratio become more and more challenging.Atomic layer deposition (Atomic layer deposition, with
Lower abbreviation ALD) it is exactly the new membrane deposition method of one kind that proposes in order to cope with this challenge.
During carrying out ALD technique, reaction gas is continuously passed through in the reaction chamber for being loaded with substrate.In order to improve
The activity of reaction gas generallys use PEALD (Plasma Enhanced Atomic Layer Deposition, plasma
Enhance atomic layer deposition) technique, which can further expand the type of precursors relative to common ALD technique,
And since plasma has higher activity, the temperature of entire reaction chamber can be reduced and improve deposition rate.
Existing PEALD equipment includes reaction chamber and the chamber combination that is arranged at the top of reaction chamber, for by radio frequency function
Rate is loaded onto reaction chamber and conveying process gas.Specifically, Fig. 1 is the cross-sectional view of existing chamber combination.Referring to Fig. 1,
The chamber combination includes electrode plate 3, even flow plate 4 and suction nozzle 1, wherein electrode plate 3 is electrically connected by adaptation 5 with radio-frequency power supply 6
It connects.Electrode plate 3 and even flow plate 4 constitute uniform flow space, and suction nozzle 1 is arranged in electrode plate 1, and the air inlet 2 of suction nozzle 1 with it is even
Fluid space connection.Also, multiple gas outlets are provided in even flow plate 4, the gas outlet respectively with uniform flow space and reaction chamber
Connection.
But since electrode plate 3 and even flow plate 4 are using conductive material production, which plays feed-in RF energy simultaneously
With the effect of uniform flow gas, this is inevitably present following problems in practical applications:
Since electrode plate 3 and even flow plate 4 are loaded radio-frequency voltage, this be may cause in the gas outlet of even flow plate 4
Gas is ionized to form plasma, so that hollow cathode discharge is easily caused, to cause radio frequency system unstable.In addition,
The structure design of suction nozzle 1 also easily causes build-up of luminance and sparking in the gas transmission pipeline docked with suction nozzle 1.The above two o'clock is equal
It will affect the stability of plasma.
Summary of the invention
The present invention is directed at least solve one of the technical problems existing in the prior art, a kind of chamber combination and anti-is proposed
Chamber is answered, it can be to avoid hollow cathode discharge be generated, so as to improve the stability of plasma.
A kind of chamber combination is provided to achieve the purpose of the present invention, comprising:
Electrode plate, the electrode plate are electrically connected with radio frequency source, and are provided with air inlet on the electrode plate；And
Uniform flow component, the uniform flow component are made of insulating materials, and between the uniform flow component and the electrode plate
Uniform flow space is constituted, the air inlet is connected to the uniform flow space, and multiple gas outlets, institute are provided on the uniform flow component
Gas outlet is stated to be connected to the uniform flow space and reaction chamber respectively.
Optionally, the upper surface of the electrode plate is plane；The lower surface of the electrode plate is cheese curved surface, the circle
It is recessed towards the upper surface to push up shape curved surface.
Optionally, the uniform flow component is divided into circular central subregion and the annular around the circular central subregion
Edge subregion；The diameter of the gas outlet in the circular central subregion is less than the outlet in the ring edge subregion
The diameter of mouth.
Optionally, the value range of the diameter of the gas outlet in the circular central subregion is in 1mm~2.5mm；Institute
The value range of the diameter of the gas outlet in ring edge subregion is stated in 2.6mm~5mm.
Optionally, the uniform flow component includes the even flow plate equipped with the gas outlet, the value of the thickness of the even flow plate
Range is in 2mm~6mm.
It optionally, further include transfer pipeline and insulating element, wherein the insulating element is located at the transfer pipeline and institute
State between electrode plate, and be provided with inlet channel in the insulating element, the inlet channel respectively with the transfer pipeline
It is connected to the air inlet.
Optionally, the inlet channel includes first through hole and the second through-hole, wherein and second through-hole is multiple, and
It is arranged around the first through hole.
Optionally, the value range of the diameter of the first through hole is in 20mm~30mm；The diameter of second through-hole
Value range is in 1mm~3mm.
Optionally, length of the insulating element on the direction perpendicular to the electrode plate is not less than 40mm.
It optionally, further include heating component, the top of the electrode plate is arranged in the heating component, and around the electricity
The circumferencial direction of pole plate is arranged.
It optionally, further include the shielding case being grounded and annular upper cover, wherein
The top of the reaction chamber is arranged in the annular upper cover, and the uniform flow component is mounted in the annular upper cover
Side；
The closing electrode is collectively formed in the upper tops of the annular, and with the annular upper cover in the shielding case setting
The enclosure space of plate and the heating component.
As another technical solution, the present invention also provides a kind of reaction chambers, comprising:
Above-mentioned chamber combination provided by the invention；
Cavity, top has opening, and is provided with exhaust outlet on the cavity；The chamber combination is arranged described
The top of cavity；
Confinement ring, setting in the cavity, and form exhaust space between the confinement ring and the cavity, institute
Exhaust space is stated to be connected to the exhaust outlet.
The invention has the following advantages:
Chamber combination provided by the invention, by the way that electrode plate and uniform flow component are arranged to two components, the uniform flow portion
Part is made of insulating materials, hollow cathode discharge can be led to the problem of to avoid electrode plate, so as to improve plasma
Stability.
Reaction chamber provided by the invention avoids generating hollow by using above-mentioned chamber combination provided by the invention
Cathodic discharge, so as to improve the stability of plasma.
Detailed description of the invention
Fig. 1 is the cross-sectional view of existing chamber combination；
Fig. 2 is the cross-sectional view of chamber combination provided in an embodiment of the present invention；
Fig. 3 A is the top view of insulating part used in the embodiment of the present invention；
Fig. 3 B is the cross-sectional view of the line A-A along Fig. 3 A；
Fig. 4 is the cross-sectional view of reaction chamber provided in an embodiment of the present invention.
Specific embodiment
To make those skilled in the art more fully understand technical solution of the present invention, come with reference to the accompanying drawing to the present invention
The chamber combination and reaction chamber of offer are described in detail.
Referring to Fig. 2, chamber combination provided in an embodiment of the present invention comprising electrode plate 8 and uniform flow component 9, wherein should
Electrode plate 8 is electrically connected with radio frequency source, and air inlet 81 is provided on electrode plate 8, for conveying process gas；Uniform flow component 9
It being made of insulating materials, and collectively forms uniform flow space 10 with electrode plate 8, air inlet 81 is connected to the uniform flow space 10, and
And multiple gas outlets 911 are provided on uniform flow component 9, the gas outlet 911 is respectively with uniform flow space 10 and reaction chamber (in figure
It is not shown) connection.Process gas successively enters reaction chamber via air inlet 81, uniform flow space 10 and each gas outlet 911.
Since above-mentioned electrode plate 8 and uniform flow component 9 are arranged to two components, and uniform flow component 9 is made of insulating materials,
This can lead to the problem of hollow cathode discharge to avoid electrode plate, so as to improve the stability of plasma.Insulating materials is excellent
It is selected as polyether-ether-ketone (PEEK), polyetherimide (ULTEM) etc..This material plasma comes back to original by excitation state
The probability (recombination rate) of primary state is relatively low, thereby may be ensured that the stability of plasma.
Preferably, the thickness of the different zones of the corresponding reaction chamber of electrode plate 8 is different, so that the indoor electric field of reaction chamber point
Cloth tends to uniformly, so as to improve plasma distribution uniformity.In the present embodiment, for reaction chamber radially
The case where non-uniform electric, for example, the electric field strength of reaction chamber central area is greater than the electric field strength of fringe region.Electricity
The upper surface 82 of pole plate 8 is plane；The lower surface 83 of electrode plate 8 is cheese curved surface, and the cheese curved surface is towards upper surface 82
It is recessed.In this way, the thickness of electrode plate 8 is gradually increased from center to edge, the size of impedance is gradually increased from center to edge,
So as to compensate the difference existing for the radially field distribution of reaction chamber, and then plasma can be improved and be evenly distributed
Property.
It should be noted that the lower surface 82 of electrode plate 8 is not limited to the shape using the present embodiment, in practical application
In, which can also be using other arbitrary shapes, such as the conical surface, step surface etc..Alternatively, electrode plate 8 can also be made
Global shape is tortuous or bending.As long as realizing that the thickness of the different zones of the corresponding reaction chamber of electrode plate 8 is different
.In addition, the thickness of the different zones of the corresponding reaction chamber of electrode plate 8 can be set according to the etch topography of chip.
The diameter of gas outlet 911 is bigger, then the flow of gas is bigger；Conversely, the diameter of gas outlet 911 is smaller, then gas
Flow it is smaller.Based on this, uniform flow component 9 is divided into multiple subregions, and the diameter of the gas outlet 911 in different subregions is different, with
The air flow method difference in corresponding reaction chamber different zones is supplemented, is distributed on a surface of a wafer so as to improve plasma
Uniformity, and then improve quality of forming film.
In the present embodiment, for gas flow difference existing for the central area of reaction chamber and fringe region, that is, anti-
It answers the gas flow of chamber central area to be greater than the gas flow of fringe region, subregion is set as two, respectively in circle
Heart subregion and the ring edge subregion around the circular central subregion, also, the gas outlet 911 in circular central subregion
Diameter is less than the diameter of the gas outlet 911 in ring edge subregion, so as to the central area and edge of compensatory reactionBu Changfanying chamber
Gas flow difference existing for region.Preferably, the value range of the diameter of the gas outlet 911 in circular central subregion is in 1mm
~2.5mm；The value range of the diameter of gas outlet 911 in the ring edge subregion is in 2.6mm~5mm.
Preferably, the diameter D1 of circular central subregion be less than or equal to ring edge subregion outer diameter D 2 three/
One.
It certainly, in practical applications, can also be in the more subregions of radially further division of reaction chamber, such as 3
~5.Alternatively, flow distribution evenness can also be improved i.e. as long as can be realized by the way of any other division region
It can.
In the present embodiment, uniform flow component 9 includes the even flow plate 91 being linked together and mounting ring 92, wherein even flow plate 91
The top of reaction chamber is set, and gas outlet 911 is arranged on even flow plate 91；Mounting ring 92 is used for even flow plate 91 and reaction chamber
Room is fixedly connected.By being linked together even flow plate 91 and mounting ring 92, the stability of structure can be improved.The even flow plate 91
The value range of thickness is in 2mm~6mm.
In the present embodiment, chamber combination further includes transfer pipeline 13 and insulating element 12, wherein transfer pipeline 13 into
Gas end is connect with the remote plasma source 141 for chamber clean, and outlet side is connect with insulating element 12.In addition, delivery pipe
Road 13 is also used to convey the process gas from process gas transfer pipeline 142.Insulating element 12 is located at transfer pipeline 13 and electricity
Between pole plate 8, and be provided with inlet channel in insulating element 12, the inlet channel respectively with transfer pipeline 13 and air inlet 81
Connection.It is empty that the process gas provided by gas source 14 successively enters uniform flow via transfer pipeline 13, inlet channel 121 and air inlet 81
Between 10.
By above-mentioned insulating element 12, transfer pipeline 13 can be electrically insulated with electrode plate 8, while increased therebetween
Insulation distance improves system stability so as to reduce sparking risk.Preferably, insulating element 12 is perpendicular to electrode plate 8
Direction on length be not less than 40mm, it is preferred that the value range of the length is in 40mm~60mm.
Fig. 3 A is please referred to, above-mentioned inlet channel includes first through hole 121 and the second through-hole 122, wherein the second through-hole 122
To be multiple, and it is arranged around first through hole 121.
Optionally, first through hole 121 is clear opening, and the value range of the diameter of first through hole 121 is in 20mm~30mm.
Also, the second through-hole 122 is clear opening, and the diameter of the second through-hole 122 is less than the diameter of first through hole 121.Due to second logical
The diameter in hole 122 is smaller, can increase the draught head between 12 both ends of insulating element, so as to further avoid in through-hole
Middle generation plasma, and then influence the stability of reaction chamber chamber piasma.The value range of the diameter of second through-hole 122
In 1mm~3mm.Certainly, in practical applications, the second through-hole 122 can also be bellmouth.
In the present embodiment, as shown in Figure 3B, insulating element 12 is tightly connected with transfer pipeline 13 and electrode plate 8 respectively,
And two ends of the inlet channel of insulating element 12 formed chamfering (such as 121 both ends of first through hole shown in Fig. 3 B fall
Angle B) and the end docked respectively with inlet channel of transfer pipeline 13 and air inlet 81 be formed with chamfering.By carrying out chamfering
Processing, can further decrease sparking risk.
Preferably, chamber combination further includes heating component 17, which is arranged in the top of electrode plate 8, and ring
Circumferencial direction around the electrode plate 8 is arranged；Also, heating component 17 includes heater strip and the insulating layer for coating the heater strip.It borrows
Help insulating layer, it is ensured that heater strip is electrically insulated with electrode plate 8, so as to further decrease sparking risk.Certainly, in reality
In, dielectric heater strip also can be used, and the heater strip is coated using the corrosion-resistant and preferable insulating layer of thermal conductivity.
The material of insulating layer is preferably aluminium.In addition, heating component 17 can be fixed on electrode plate 8 by the way of bonding.
In the present embodiment, heating component 17 includes multiple branches, and multiple branches arrange along the circumferencial direction interval of electrode plate 8
Cloth so as to improve heating uniformity, and then improves process uniformity.
In the present embodiment, chamber combination further includes radio-frequency electrode 11 and radio frequency source, which is in the form of a column, and sets
It sets at the top of electrode plate 8, and is located at the fringe region of electrode plate 8.Radio frequency source includes adaptation 15 and radio-frequency power supply 16,
Orchestration 15 is electrically connected with radio-frequency electrode 11.
In the present embodiment, chamber combination further includes the shielding case 19 being grounded and annular upper cover 18, wherein annular upper cover
18 are arranged in the top of reaction chamber, and uniform flow component 9 is mounted on annular 18 inside of upper cover；Shielding case 19 is arranged in annular upper cover 18
Top, and the enclosure space for closing radio-frequency electrode 11 is collectively formed with annular upper cover 18, to avoid radio-frequency leakage.Preferably,
It is provided with beryllium copper reed between shielding case 19 and the contact surface of annular upper cover 18, to guarantee that shield effectiveness is best.
In the prior art, chamber combination includes the multiple dielectric layers being stacked layer by layer from inside to outside, this makes radio-frequency electrode
It needs to contact with electrode plate across multiple dielectric layers.For this purpose, by shielding case 19, it is possible to reduce the quantity of dielectric layer makes
Radio-frequency electrode 11 is directly contacted with electrode plate, without passing through dielectric layer.It is beaten moreover, the reduction of medium layer number avoids interlayer
The generation of fiery phenomenon, to improve system stability.
The roof of shielding case 19 is in tabular, also, passes through the spacing between the roof and electrode plate 8 of setting shielding case 19
The utilization rate of radio-frequency power can be improved in D3.The space D 3 is bigger, then the utilization rate of radio-frequency power is higher.Preferably, space D 3
Value range in 40mm~100mm.
In conclusion chamber combination provided in an embodiment of the present invention, has the advantage that
First, can generate hollow cathode discharge since uniform flow component 9 is using insulating materials production to avoid electrode plate and ask
Topic, so as to improve the stability of plasma.
Second, the thickness of the different zones of the corresponding reaction chamber of electrode plate 8 is different, so that the indoor field distribution of reaction chamber
Tend to uniformly, so as to improve plasma distribution uniformity.
Third, transfer pipeline 13 can be electrically insulated with electrode plate 8 by insulating element 12, while increasing between the two
Insulation distance improve system stability so as to reduce sparking risk.
Fourth, heating component 17 includes heater strip and the insulating layer for coating the heater strip.By insulating layer, it is ensured that add
Heated filament is electrically insulated with electrode plate 8, so as to further decrease sparking risk.
Fifth, by shielding case 19, it is possible to reduce the quantity of dielectric layer contacts radio-frequency electrode 11 directly with electrode plate,
Without passing through dielectric layer.Moreover, the reduction of medium layer number avoids the generation of interlayer spark phenomenon, to improve system
Stability.
Sixth, the space D 3 between the roof and electrode plate 8 that pass through setting shielding case 19, can be improved the benefit of radio-frequency power
With rate.The space D 3 is bigger, then the utilization rate of radio-frequency power is higher.
As another technical solution, referring to Fig. 4, the embodiment of the present invention provides a kind of reaction chamber comprising this hair
Above-mentioned chamber combination, cavity 20 and the confinement ring 21 that bright embodiment provides.
Wherein, the top of cavity 20 has opening, and is provided with exhaust outlet 201 on the cavity 20.Chamber combination setting
At the top of cavity 10.Confinement ring 21 is arranged in cavity 20, for constraining the distributed areas of plasma 25.Also, about
Exhaust space 22 is formed between beam ring 21 and cavity 20, which is connected to exhaust outlet 201, and residual gas is successively via exhaust
Space 22 and exhaust outlet 201 are discharged.The top of confinement ring 21 is arranged in uniform flow component 9, and closes the top opening of confinement ring 21,
The gas flowed out from gas outlet 911 enters in confinement ring 21.Pedestal 23 is arranged in cavity 20, is used for bearing wafer, and should
Pedestal 23 is liftable, and when pedestal 23 rises to process station as shown in Figure 4, and the bottom of closing confinement ring 21 is opened
Mouthful.
It in practical applications, can be by the way of crimping in order to guarantee that process gas less enters exhaust space 223
It is fixed with confinement ring 21.
In addition, heating rod 24 is additionally provided in cavity 20, for guaranteeing that the indoor temperature of chamber is constant.The heating rod 24 can
Axially symmetric distributions that are multiple, and surrounding cavity are thought, cavity 20 can be uniformly heated up.
In practical applications, reaction chamber can be atomic layer deposition (Atomic layer deposition, below letter
Claim ALD) reaction chamber, or may be vapor deposition (the Plasma Enhanced of plasma enhanced chemical
Chemical Vapor Deposition, PECVD) reaction chamber etc..
Reaction chamber provided in an embodiment of the present invention, by using above-mentioned chamber combination provided in an embodiment of the present invention,
The stability of plasma not only can be improved, but also plasma distribution uniformity can be improved.
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present and the exemplary implementation that uses
Mode, however the present invention is not limited thereto.For those skilled in the art, essence of the invention is not being departed from
In the case where mind and essence, various changes and modifications can be made therein, these variations and modifications are also considered as protection scope of the present invention.
Claims (12)
1. a kind of chamber combination characterized by comprising
Electrode plate, the electrode plate are electrically connected with radio frequency source, and are provided with air inlet on the electrode plate；And
Uniform flow component, the uniform flow component is made of insulating materials, and is constituted between the uniform flow component and the electrode plate
Uniform flow space, the air inlet are connected to the uniform flow space, are provided with multiple gas outlets on the uniform flow component, it is described go out
Port is connected to the uniform flow space and reaction chamber respectively.
2. chamber combination according to claim 1, which is characterized in that the upper surface of the electrode plate is plane；The electricity
The lower surface of pole plate is cheese curved surface, and the cheese curved surface is recessed towards the upper surface.
3. chamber combination according to claim 1, which is characterized in that the uniform flow component be divided into circular central subregion and
Ring edge subregion around the circular central subregion；The diameter of the gas outlet in the circular central subregion is small
The diameter of the gas outlet in the ring edge subregion.
4. chamber combination according to claim 3, which is characterized in that the gas outlet in the circular central subregion
The value range of diameter is in 1mm~2.5mm；The value range of the diameter of the gas outlet in the ring edge subregion exists
2.6mm~5mm.
5. chamber combination according to claim 4, which is characterized in that the uniform flow component includes being equipped with the gas outlet
Even flow plate, the value range of the thickness of the even flow plate is in 2mm~6mm.
6. chamber combination according to claim 1, which is characterized in that further include transfer pipeline and insulating element, wherein institute
Insulating element is stated between the transfer pipeline and the electrode plate, and be provided with inlet channel in the insulating element,
The inlet channel is connected to the transfer pipeline and the air inlet respectively.
7. chamber combination according to claim 6, which is characterized in that the inlet channel includes that first through hole and second are logical
Hole, wherein second through-hole is multiple, and is arranged around the first through hole.
8. chamber combination according to claim 7, which is characterized in that the value range of the diameter of the first through hole exists
20mm~30mm；The value range of the diameter of second through-hole is in 1mm~3mm.
9. chamber combination according to claim 6, which is characterized in that the insulating element is perpendicular to the electrode plate
Length on direction is not less than 40mm.
10. chamber combination according to claim 1, which is characterized in that it further include heating component, the heating component setting
It is arranged at the top of the electrode plate, and around the circumferencial direction of the electrode plate.
11. chamber combination according to claim 10, which is characterized in that further include on the shielding case being grounded and annular
Lid, wherein
The top of the reaction chamber is arranged in the annular upper cover, and the uniform flow component is mounted on the inside of the annular upper cover；
Shielding case setting in the upper tops of the annular, and with the annular upper cover be collectively formed the closing electrode plate and
The enclosure space of the heating component.
12. a kind of reaction chamber characterized by comprising
Chamber combination described in claim 1-11 any one；
Cavity, top has opening, and is provided with exhaust outlet on the cavity；The chamber combination is arranged in the cavity
Top；
Confinement ring, setting in the cavity, and form exhaust space between the confinement ring and the cavity, the row
Headroom is connected to the exhaust outlet.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810457537.9A CN110484895B (en) | 2018-05-14 | 2018-05-14 | Chamber assembly and reaction chamber |
| TW108108056A TWI749301B (en) | 2018-05-14 | 2019-03-11 | Chamber assembly and reaction chamber |
| PCT/CN2019/077824 WO2019218765A1 (en) | 2018-05-14 | 2019-03-12 | Chamber assembly and reaction chamber |
| KR1020207029179A KR102439759B1 (en) | 2018-05-14 | 2019-03-12 | Chamber assembly and reaction chamber |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810457537.9A CN110484895B (en) | 2018-05-14 | 2018-05-14 | Chamber assembly and reaction chamber |
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| Publication Number | Publication Date |
|---|---|
| CN110484895A true CN110484895A (en) | 2019-11-22 |
| CN110484895B CN110484895B (en) | 2021-01-08 |
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| CN201810457537.9A Active CN110484895B (en) | 2018-05-14 | 2018-05-14 | Chamber assembly and reaction chamber |
Country Status (4)
| Country | Link |
|---|---|
| KR (1) | KR102439759B1 (en) |
| CN (1) | CN110484895B (en) |
| TW (1) | TWI749301B (en) |
| WO (1) | WO2019218765A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112176325A (en) * | 2020-09-25 | 2021-01-05 | 中国电子科技集团公司第四十八研究所 | Plate type PECVD equipment |
| CN112738968A (en) * | 2020-12-18 | 2021-04-30 | 北京北方华创微电子装备有限公司 | Plasma generating device and semiconductor processing equipment |
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Also Published As
| Publication number | Publication date |
|---|---|
| WO2019218765A1 (en) | 2019-11-21 |
| CN110484895B (en) | 2021-01-08 |
| KR102439759B1 (en) | 2022-09-02 |
| KR20200130416A (en) | 2020-11-18 |
| TWI749301B (en) | 2021-12-11 |
| TW201947671A (en) | 2019-12-16 |
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