KR20200130416A - Chamber assembly and reaction chamber - Google Patents

Abstract

In the chamber assembly, the electrode plate 8 and the flow equalizing member 9 are included, the electrode plate 8 is used for electrical connection with the RF power supply 16, and the electrode plate 8 has a gas inlet 81 ) Is provided. The flow equalization member 9 is manufactured using an insulating material, forms a flow equalization space 10 with the electrode plate 8, and the gas inlet 81 communicates with the flow equalization space 10, and the flow equalization The member 9 is provided with a plurality of gas outlets 911. The chamber assembly prevents the hollow cathode discharge problem from occurring and improves the stability of the plasma. Furthermore, it provides a reaction chamber.

Description

Chamber assembly and reaction chamber

The present invention relates to the field of semiconductor technology, and in particular, to a chamber assembly and a reaction chamber.

In the field of semiconductor processing, as the geometric size of electronic components continues to decrease and the density of components continues to increase, it becomes increasingly difficult to implement a feature size and aspect ratio. ALD (Atomic Layer Deposition) is a novel thin film deposition method proposed to meet this challenge.

In the process of performing the ALD process, the reaction gas is continuously introduced into the reaction chamber in which the substrate is mounted. In order to improve the activity of the reaction gas, a PEALD (Plasma Enhanced Atomic Layer Deposition, plasma enhanced atomic layer deposition) process is typically used, and the process can further expand the types of reaction precursors compared to the conventional ALD process. Since the plasma has a higher activity, it is possible to lower the temperature of the entire reaction chamber and improve the deposition rate.

A conventional PEALD facility includes a reaction chamber and a chamber assembly installed above the reaction chamber, and the chamber assembly is used to load RF power into the reaction chamber and transfer process gas. Specifically, FIG. 1 is a cross-sectional view of a conventional chamber assembly. Referring to FIG. 1, the chamber assembly includes an electrode plate 3, a flow equalization plate 4, and a gas inlet nozzle 1, of which the electrode plate 3 is an RF power source ( 6) and electrically connected. The electrode plate 3 and the flow uniforming plate 4 are stacked together to form a flow uniforming space. As shown in the drawing, the gas inlet nozzle 1 extends upward to the outside of the reaction chamber and extends downward to the electrode plate 3, and corresponds to the gas inlet 2 of the gas inlet nozzle 1 and the electrode plate ( In 3), a gas passage through the electrode plate 3 is opened along the thickness direction. Thereby, the gas inlet 2 of the gas inlet nozzle 1 communicates with the flow equalization space through the corresponding gas passage, so that the process gas is supplied with the gas inlet 2 of the gas inlet nozzle 1 and the gas in the electrode plate 3. Through the passage, the electrode plate 3 and the flow equalizing plate 4 enter the flow equalization space configured. In addition, the flow equalization plate 4 is provided with a plurality of gas outlets passing through the flow equalization plate 4 along the thickness direction, and the flow equalization space communicates with the reaction chamber through the corresponding gas outlet.

In practical applications, although the above-described chamber assembly is often used in PEALD equipment, there are inevitably the following problems.

1. Since both the electrode plate 3 and the flow uniforming plate 4 in the chamber assembly are manufactured using a conductive material and both are directly laminated together, the flow uniforming plate ( 4) is also loaded with RF voltage, which causes ionization of the gas in the gas outlet of the flow equalization plate 4 to form plasma, thus easily causing hollow cathode discharge and creating instability of the RF system. It affects stability.

2. The structural design of the gas inlet nozzle 1 also easily causes ignition and sparks inside the gas transfer line docked with the gas inlet nozzle 1, and finally affects the stability of the plasma.

In the present invention, in order to solve at least one of the technical problems existing in the prior art, a chamber assembly and a reaction chamber have been proposed, it is possible to prevent the hollow cathode discharge from occurring, and thus the stability of the plasma can be improved.

A chamber assembly provided for realizing the object of the present invention includes an electrode plate and a flow equalizing member,

The electrode plate is used for electrical connection with an RF source, and a gas inlet is provided in the electrode plate,

The flow equalization member is manufactured using an insulating material, a flow equalization space is formed between the flow equalization member and the electrode plate, the gas inlet communicates with the flow equalization space, and the flow equalization member includes a plurality of gases. An outlet is provided.

Selectably, the electrode plate has a different thickness in the radial direction.

Optionally, the upper surface of the electrode plate is flat, and the thickness of the electrode plate gradually increases from the center to the edge in the radial direction of the electrode plate.

Optionally, the flow equalization member is divided into a plurality of partitions along a radial direction, and the diameters of the gas outlets among the plurality of partitions are provided differently.

Optionally, the flow equalization member is divided into two partitions, a central partition and an edge partition positioned around the central partition, and a diameter of the gas outlet in the central partition is greater than a diameter of the gas outlet in the edge partition. small.

Optionally, the diameter of the central partition is less than or equal to a third of the outer diameter of the edge partition.

Optionally, the value range of the diameter of the gas outlet in the central partition is 1mm-2.5mm, and the value range of the diameter of the gas outlet in the edge partition is 2.6mm-5mm.

Optionally, the flow smoothing member includes a flow smoothing plate provided with the gas outlet, and the thickness of the flow smoothing plate has a value range of 2mm-6mm.

Optionally, it further comprises a transfer line and an insulation member, wherein the insulation member is located between the transfer line and the electrode plate, the insulation member is provided with a gas inlet passage, and the gas inlet passage is the transfer line , Each communicated with the gas inlet.

Optionally, the gas inlet passage includes a first through hole and a second through hole, of which the second through hole is provided in plural and surrounds the first through hole.

Selectably, the diameter of the second through hole is provided smaller than the diameter of the first through hole.

Selectably, the value range of the diameter of the first through-hole is 20mm-30mm, and the value range of the diameter of the second through-hole is 1mm-3mm.

Selectably, the length of the insulating member in a direction perpendicular to the electrode plate is provided not less than 40 mm.

Optionally, a heating assembly is further included, wherein the heating assembly is installed on the electrode plate and surrounds the circumferential direction of the electrode plate.

Optionally, it further includes a shield case and a ring-shaped upper cover that are all grounded,

Among them, the flow equalization member is mounted inside the ring-shaped upper cover,

The shield case is installed above the ring-shaped upper cover, and covers the electrode plate and the heating assembly therein together with the ring-shaped upper cover.

As another technical solution, in the present invention, a reaction chamber is provided, and the reaction chamber includes the above-described chamber assembly, a cavity, and a restraining ring provided in the present invention,

Among them, an upper portion of the cavity is provided with an opening, an exhaust port is provided at the bottom of the cavity, and the chamber assembly is installed on the upper portion of the cavity,

The constraining ring is installed in the cavity and is used to constrain the distribution of plasma.

The present invention has the following advantageous effects.

In the chamber assembly provided in the present invention, since the electrode plate and the flow equalizing member are manufactured using different materials, and the flow equalizing member is manufactured using an insulating material, this is the flow equalization when loading the RF voltage on the electrode plate. By preventing the RF voltage from being loaded on the member, it is possible to prevent the formation of plasma due to ionization of the gas in the gas outlet of the flow uniformity member, and further, it is possible to prevent the occurrence of the hollow cathode discharge problem, and improve the stability of the plasma. I can make it.

1 is a cross-sectional view of a conventional chamber assembly.
2 is a cross-sectional view of a chamber assembly provided in an embodiment of the present invention.
3A is a bird's-eye view of an insulator used in an embodiment of the present invention.
3B is a cross-sectional view taken along line AA in FIG. 3A.
4 is a cross-sectional view of a reaction chamber provided in an embodiment of the present invention.

In order for those skilled in the art to more accurately understand the technical solutions of the present invention, the following describes in detail a chamber assembly and a reaction chamber provided in the present invention by combining the drawings.

2, the chamber assembly provided in the embodiment of the present invention includes an electrode plate 8 and a flow equalization member 9, of which the electrode plate 8 is used for electrical connection with an RF source. , The electrode plate 8 is provided with a gas inlet 81 for transferring the process gas. The flow equalization member 9 is manufactured using an insulating material, forms a flow equalization space 10 together with the electrode plate 8, and the gas inlet 81 communicates with the flow equalization space 10, and The homogenizing member 9 is provided with a plurality of gas outlets 911, and the gas outlets 911 are used to transfer the process gas in the flow equalization space 10 to a reaction chamber (not shown). Accordingly, the process gas sequentially enters the reaction chamber through the gas inlet 81, the flow equalization space 10, and each gas outlet 911.

Since the above-described electrode plate 8 and the flow equalization member 9 are manufactured using different materials, and the flow equalization member 9 is manufactured using an insulating material, it loads an RF voltage on the electrode plate 8. When the flow equalization member 9 is not loaded with an RF voltage, the gas in the gas outlet 911 of the flow equalization member 9 can be prevented from ionizing to form a plasma, and furthermore, the hollow cathode discharge problem is prevented. It can be prevented from occurring, and the stability of the plasma can be improved.

The insulating material is preferably polyetherether ketone (PEEK), polyetherimide (ULTEM) and the like. Such a material has a low probability of causing the plasma to return to its original state from the excited state (complex rate), reducing the risk of ignition and spark occurring inside the gas outlet of the flow equalizing member, and ensuring the stability of the plasma. .

Selectably, the thickness of the electrode plate 8 in the radial direction (ie, the X direction shown in Fig. 2) (ie the thickness of the electrode plate 8 in the Y direction shown in Fig. 2) is different. By doing so, the thickness of the electrode plate 8 corresponding to different regions in the radial direction of the reaction chamber is provided differently, and the distribution of the electric field in the reaction chamber is made uniform, thereby uniformity of plasma distribution in the radial direction of the reaction chamber Can improve. For example, in the present embodiment, when the electric field distribution in the radial direction of the reaction chamber is not uniform, the electric field strength in the center region of the reaction chamber is greater than the electric field strength in the edge region, and the electrode plate 8 is It is thin and has a thick edge. Specifically, the upper surface 82 of the electrode plate 8 is flat, and the thickness of the electrode plate 8 in the radial direction of the electrode plate 8 gradually increases from the center to the edge. In other words, the lower surface 83 of the electrode plate 8 is a dome-shaped curved surface, and the dome-shaped curved surface is recessed toward the upper surface 82. Accordingly, the thickness of the electrode plate 8 gradually increases from the center to the edge, and the magnitude of the impedance gradually increases from the center to the edge of the electrode plate 8, thereby reducing the difference in distribution of the electric field in the radial direction of the reaction chamber. It is possible to compensate, and further improve the uniformity of plasma distribution in the radial direction of the reaction chamber.

It should be explained that in practical applications, some etching processes require uniform etching on the surface of the workpiece, that is, the etching depth in different areas of the workpiece is required to be uniform, and some etching processes require the It requires non-uniform etching of the surface, that is, the etch depth in different areas of the work piece is not consistent. Therefore, in order to adapt to the demand for the form of etching on the surface of the workpiece, the lower surface 82 of the electrode plate 8 has a different shape so that the plasma distribution in the radial direction of the reaction chamber satisfies the process demand. can do. For example, in the case of performing uniform etching, the plasma distribution in the radial direction of the reaction chamber is required to be uniform, and the lower surface 82 of the electrode plate 8 can be applied with the shape according to this embodiment. Alternatively, any other shape that allows the plasma distribution to be uniform may be applied. For example, the lower surface of the electrode 8 has a cone shape (projection from the plane on which the central axis of the electrode plate 8 is placed is a triangle), and a conical shape (projection from the plane where the central axis of the electrode plate 8 is placed) Is a trapezoid), etc. In the case of performing non-uniform etching, the plasma distribution in the radial direction of the reaction chamber is required to exhibit a non-uniform state according to the request for the etching type, for example, the lower surface of the electrode plate 8 is A bent shape similar to a wavy shape or a circumferential shape should be displayed. The upper surface of the electrode plate 8 may have a planar shape or may have other shapes, and the thickness of each position of the electrode plate 8 only needs to satisfy the process requirements by matching with the lower surface.

The larger the diameter of the gas outlet 911 is, the larger the flow rate of gas is, and the smaller the diameter of the gas outlet 911 is, the smaller the flow rate of gas is. Based on this, the flow equalization member 9 is divided into a plurality of partitions along its radial direction (parallel to the X direction in Fig. 2), and the diameter of the gas outlet 911 in the plurality of partitions is different. Provided, it is possible to improve the uniformity of the plasma distribution on the surface of the workpiece and further improve the process result by adjusting the difference in the distribution of the corresponding air flow in different regions in the radial direction of the reaction chamber.

In this embodiment, for the difference in gas flow rate between the center region and the edge region of the reaction chamber, that is, the gas flow rate in the reaction chamber center region is greater than the gas flow rate in the edge region, the flow equalization member 9 It is divided into two partitions with an annular edge partition positioned around the partition. In addition, the diameter of the gas outlet 911 in the central partition is smaller than the diameter of the gas outlet 911 in the edge partition, and thus, a difference in gas flow rate between the center region and the edge region of the reaction chamber can be compensated. Preferably, the value range of the diameter of the gas outlet 911 in the central partition is 1mm-2.5mm, by doing so, it is possible to ensure that the airflow flow rate in the central partition satisfies the process requirements, as well as the gas in the central partition. The gas flow rate at the outlet can be reduced appropriately. The value range of the diameter of the gas outlet 911 in the edge partition is 2.6mm-5mm. By doing so, it is possible to ensure that the gas flow rate at the gas outlet in the edge partition is not too large, as well as the gas flow rate at the gas outlet in the edge partition. Can be appropriately increased.

Preferably, the diameter of the center partition (D1) is less than or equal to one-third of the outer diameter of the edge partition (D2), by doing so, the airflow flow rate of the gas outlet in both the center partition and the edge partition satisfies the process requirements. In addition to being able to ensure that, it is possible to reduce the difference in gas flow rate between the central region and the edge region of the reaction chamber.

Of course, in a practical application, the flow uniforming member 9 can be divided into more partitions along the radial direction of the reaction chamber from the center of the flow uniforming member 9, for example, it can be divided into 3-5, These partitions are nested with each other. Of course, as long as the uniformity of the airflow distribution can be improved, a method in which each partition is nested with each other is not applied, and other arbitrary area division methods can be applied.

In this embodiment, the flow equalization member 9 includes a flow equalization plate 91 and a mounting ring 92 integrally connected, of which the flow equalization plate 91 is installed on the upper part of the reaction chamber, and the gas outlet 911 ) Is installed on the flow equalizing plate 91, and the mounting ring 92 is used to fix the flow equalizing plate 91 to the reaction chamber. It is possible to improve the stability of the structure by integrally connecting the flow equalization plate 91 and the mounting ring 92. The value range of the thickness of the flow equalization plate 91 is 2mm-6mm. It should be described here that "connected in one piece" may mean that the flow uniforming plate 91 and the mounting ring 92 are integrally formed to be integrally connected, and the flow uniforming plate 91 and the mounting ring 92 ) May mean that each is independently molded and then connected and fixed to be integrally connected.

In this embodiment, the chamber assembly further includes a transfer line 13 and an insulating member 12, of which the transfer line 13 is used to transfer the process gas provided from the process gas transfer line 142, and the transfer The gas inlet end of the line 13 is connected to the remote plasma source 141 for chamber cleaning, and the gas outlet end is connected to the insulating member 12. The insulating member 12 is located between the transfer line 13 and the electrode plate 8, is used to electrically insulate the transfer line 13 and the electrode plate 8, and the insulating member 12 has a gas inlet passage ( 121 is provided, and the corresponding gas inlet passage 121 communicates with the transfer line 13 and the gas inlet 81, respectively. By doing so, the process gas provided from the process gas transfer line 142 sequentially enters the flow equalization space 10 through the transfer line 13, the gas inlet passage 121 and the gas inlet 81.

With the help of the insulating member 12 described above, the transfer line 13 and the electrode plate 8 can be electrically insulated, and at the same time, the insulating member 12 has a certain length in the direction perpendicular to the electrode plate 8. Therefore, it is possible to increase the insulation distance between the two, and the greater the insulation distance, the less risk of sparking at the gas inlet in the electrode plate 8, thus improving the stability of the system.

Preferably, the length of the insulating member 12 in the direction perpendicular to the electrode plate 8 is not less than 40 mm, and by doing so, an appropriate insulating distance in the electrical insulation of the transfer line 13 and the electrode plate 8 In addition, it is possible to ensure that the device has a length of the insulating member 12 in a direction perpendicular to the electrode plate 8 so that the overall size of the facility is not too large. More preferably, the length of the insulating member 12 in the direction perpendicular to the electrode plate 8 is not less than 40 mm, preferably 40 mm-60 mm.

Referring to FIG. 3A, the gas inlet passage described above includes a first through hole 121 and a second through hole 122, of which the second through hole 122 is provided in plurality, and the first through hole 121 ) Is surrounded and provided. With the help of the first through-hole 121 and the plurality of second through-holes 122, the process gas can be simultaneously transferred, the diameter of the first through-hole 121 can be appropriately reduced, and the second through-hole 122 ), we can ensure that the flow rate of the process gas meets the requirements. The smaller the diameter of the first through-hole 121 is, the less the risk of generating plasma among them, thus reducing the risk of sparking and improving the stability of the plasma in the reaction chamber.

Selectably, the diameter of the second through hole 122 is smaller than the diameter of the first through hole 121. Since the diameter of the second through-hole 122 is small, when the process gas passes through the first through-hole 121 and the second through-hole 122 at the same time, it is insulated compared to the first through-hole 121 separately provided. It is possible to increase the difference in air pressure generated between both ends of the member 12. The greater the pressure difference, the less the risk of generating plasma in the through hole, thus reducing the risk of sparking and improving the stability of the plasma in the reaction chamber.

Preferably, the value range of the diameter of the first through hole is 20mm-30mm. The value range of the diameter of the second through hole 122 is 1mm-3mm. By doing this, it is possible to ensure that the flow rate of the process gas satisfies the demand, as well as reducing the risk of plasma generation in the through hole, thus reducing the risk of sparking and improving the stability of the plasma in the reaction chamber. Can be improved.

In practical application, the first through hole 121 and the second through hole 122 may be a direct through hole, a conical hole, or the like.

As shown in FIG. 3B, in this embodiment, the insulating member 12 is sealingly connected to the transfer line 13 and the electrode plate 8, respectively, and both ends of the gas inlet passage of the insulating member 12 are chamfered. ) Is formed (for example, the chamfer (B) at both ends of the first through hole 121 shown in FIG. 3B), the transfer line 13 and the gas inlet 81 are docked with the gas inlet passage, respectively. In the chamfer is formed. By chamfering, the risk of sparking due to the sharp edges of the edges can be reduced.

Preferably, the chamber assembly further includes a heating assembly 17, and the heating assembly 17 is installed above the electrode plate 8, and is installed to surround the circumferential direction of the electrode plate 8 It is used to heat the plate (8). Specifically, the heating assembly 17 includes a heating wire and an insulating layer covering the heating wire. With the help of the insulating layer, it is possible to ensure that the heating wire is electrically insulated from the electrode plate 8. Of course, in practical applications, a heating wire manufactured using an insulating medium can be selected and used, and the heating wire is covered with a heat insulating layer having good corrosion resistance and thermal conductivity. Aluminum is preferably selected as the material of the thermal insulation layer. In addition, the heating assembly 17 may be fixed to the electrode plate 8 by applying an adhesive method.

In this embodiment, the heating assembly 17 includes a plurality of parts, and the plurality of parts are disposed at intervals along the circumferential direction of the electrode plate 8. By doing so, the heating plate 8 can be heated uniformly, and thus heating uniformity can be improved and further process uniformity can be improved.

In this embodiment, the chamber assembly further includes an RF electrode 11 and an RF source, and the RF electrode 11 forms a column shape and is installed on the upper portion of the electrode plate 8, and the edge region of the electrode plate 8 It is located in The RF source includes a matcher 15 and an RF power supply 16, and the matcher 15 is electrically connected to the RF electrode 11.

In this embodiment, the chamber assembly further includes a shield case 19 and a ring-shaped upper cover 18 that are all grounded, of which the flow equalization member 9 is mounted inside the ring-shaped upper cover 18, The shield case 19 is installed on the top of the ring-shaped upper cover 18 and covers members such as the electrode plate 8, the heating assembly 17 and the RF electrode 11 therein together with the ring-shaped upper cover 18. . That is, the case body formed jointly by the shield case 19 and the ring-shaped upper cover 18 surrounds at least the upper and side portions of the above-described member, so that RF is transmitted to the outside of the shield case 19 and the ring-shaped upper cover 18. Prevent leakage. Preferably, beryllium copper reed is installed between the contact surface of the shield case 19 and the ring-shaped upper cover 18 to ensure an optimum shielding effect.

In the prior art, the chamber assembly includes a plurality of dielectric layers stacked from the inside to the outside, and this makes it possible to contact the electrode plate only when the RF electrode passes through the plurality of dielectric layers, thus complicating the mounting of the RF electrode and causing interlayer sparking. Easy to get up In order to solve the problem, the chamber assembly provided in the present application can replace the installation of the above-described plurality of dielectric layers with the help of the shield case 19, and the RF electrode 11 does not need to pass through the dielectric layer. The mounting of the RF electrode 11 is simplified by making direct contact with the electrode plate 8. In addition, by directly contacting the RF electrode 11 with the electrode plate 8, it is possible to prevent interlayer sparking from occurring due to the installation of a plurality of dielectric layers, thus improving the stability of the system.

In this embodiment, the upper wall of the shield case 19 has a flat plate shape, and the greater the distance D3 between the upper wall of the shield case 19 and the electrode plate 8 is, the higher the utilization rate of RF power. Thus, by increasing the interval D3, the utilization rate of RF power can be improved. Preferably, the value range of the spacing D3 is 40mm-100mm. This not only ensures that the utilization rate of RF power is improved, but also prevents the overall size of the facility from becoming too large because the interval D3 is too large.

It should be described that, in practical applications, the shield case 19 may have a shape according to the present embodiment, and any other shape capable of preventing RF leakage may be applied. For example, the shield case 19 has a dome shape or the like.

In summary, the chamber assembly provided in the embodiment of the present invention has the following advantages:

1. Since the flow equalization member 9 is manufactured using an insulating material, this prevents the RF voltage from being loaded on the flow equalization member 9 when loading the RF voltage on the electrode plate 8, so that the flow equalization member 9 ), the gas in the gas outlet 911 is ionized to prevent the formation of plasma, and further, it is possible to prevent the occurrence of a hollow cathode discharge problem, and improve the stability of the plasma.

2. The thickness of the electrode plate 8 corresponding to different regions in the radial direction of the reaction chamber is provided differently, and by making the distribution of the electric field in the reaction chamber uniform, the uniformity of the plasma distribution in the radial direction of the reaction chamber is achieved. Can be improved.

3. In this embodiment, for the difference in gas flow rate between the center region and the edge region of the reaction chamber, the flow equalization member 9 is divided into two partitions, a central partition and an annular edge partition positioned around the central partition. . In addition, the diameter of the gas outlet 911 in the central partition is smaller than the diameter of the gas outlet 911 in the edge partition, and thus, a difference in gas flow rate between the center region and the edge region of the reaction chamber can be compensated.

4. With the help of the insulating member 12, the transfer line 13 and the electrode plate 8 can be electrically insulated. At the same time, the insulating member 12 has a certain length in a direction perpendicular to the electrode plate 8. Therefore, the insulating distance between the two can be increased, the risk of sparking at the gas inlet in the electrode plate 8 can be reduced, and furthermore, the stability of the system can be improved.

5. The heating assembly 17 includes a heating wire and an insulating layer covering the heating wire. With the help of the insulating layer, it is possible to ensure that the heating wire is electrically insulated from the electrode plate 8, and thus the risk of sparking can be further reduced.

6. With the help of the shield case 19, RF leakage is prevented, and it is possible to replace the installation of a plurality of dielectric layers at the same time, and the RF electrode 11 and the electrode plate 8 do not need to pass through the dielectric layer. By allowing direct contact, the mounting of the RF electrode 11 is simplified.

7. By increasing the distance D3 between the upper wall of the shield case 19 and the electrode plate 8, the utilization rate of RF power can be improved.

As another technical solution, referring to FIG. 4, an embodiment of the present invention provides a reaction chamber, and includes a chamber assembly, a cavity 20 and a restraining ring 21 provided in the above-described embodiment of the present invention.

Among them, the upper part of the cavity 20 is provided with an opening, and an exhaust port 201 is provided at the bottom of the cavity 20. The chamber assembly is installed on the cavity 20. The restraining ring 21 is installed in the cavity 20 and is used to restrain the distribution of the plasma 25. In this embodiment, the base 23 is installed in the cavity 20 and used to load the workpiece, the base 23 is elevating, and when the base 23 is raised to the process position shown in FIG. Close the bottom opening of the restraining ring 21. When performing the process, the plasma 25 is confined in the space above the base 23 and inside the sidewall of the constraining ring 21.

Optionally, an exhaust space 22 is formed between the restraining ring 21 and the cavity 20, and the exhaust space 22 communicates with the exhaust port 201, and the process residual gas is sequentially exhausted ( 22), and discharged from the reaction chamber through the exhaust port 201. The flow equalizing member 9 is installed on the upper part of the constraining ring 21 and closes the upper opening of the constraining ring 21, and the gas flowing out of the gas outlet 911 enters the constraining ring 21.

In addition, a heating rod 24 is further installed in the cavity 20 to ensure that the temperature in the chamber is constant. A plurality of the heating rods 24 may be provided, and the heating rods 24 may be uniformly distributed along the circumference of the cavity to uniformly heat the cavity 20.

In practical applications, the reaction chamber may be an atomic layer deposition (hereinafter abbreviated as ALD) reaction chamber, or a plasma enhanced chemical vapor deposition (PECVD) reaction chamber.

In the reaction chamber provided in the embodiment of the present invention, by using the chamber assembly provided in the above-described embodiment of the present invention, not only the stability of the plasma can be improved, but also the uniformity of the plasma distribution can be improved.

It should be understood that the above embodiments are exemplary embodiments used to describe the principles of the present invention, and the present invention is not limited thereto. For those of ordinary skill in the art to which the present invention belongs, various modifications and improvements can be made without departing from the spirit and substance of the present invention, and such modifications and improvements are also considered to be the scope of protection of the present invention.

Claims (16)

In the chamber assembly, comprising an electrode plate and a flow equalization member,
The electrode plate is used for electrical connection with an RF source, and a gas inlet is provided in the electrode plate,
The flow equalization member is manufactured using an insulating material, a flow equalization space is formed between the flow equalization member and the electrode plate, the gas inlet communicates with the flow equalization space, and the flow equalization member includes a plurality of gases. Chamber assembly, characterized in that the outlet is provided. The method of claim 1,
The chamber assembly, characterized in that the electrode plate has a different thickness in the radial direction. The method of claim 2,
The upper surface of the electrode plate is planar, and the thickness of the electrode plate gradually increases from the center to the edge in the radial direction of the electrode plate. The method of claim 1,
The flow uniforming member is divided into a plurality of partitions along a radial direction, and the gas outlets among the plurality of partitions have different diameters. The method of claim 4,
The flow equalization member is divided into two partitions, a central partition and an edge partition positioned around the central partition, and a diameter of the gas outlet in the central partition is smaller than a diameter of the gas outlet in the edge partition. Chamber assembly. The method of claim 5,
Chamber assembly, characterized in that the diameter of the central partition is less than or equal to a third of the outer diameter of the edge partition. The method according to claim 5 or 6,
The diameter of the gas outlet in the central partition ranges from 1 mm to 2.5 mm, and the gas outlet in the edge partition ranges from 2.6 mm to 5 mm. The method of claim 1,
The flow uniforming member includes a flow uniforming plate provided with the gas outlet, and a thickness of the flow uniforming plate has a thickness of 2mm-6mm. The method of claim 1,
Further comprising a transfer line and an insulating member,
Wherein the insulating member is located between the transfer line and the electrode plate, a gas inlet passage is provided in the insulating member, and the gas inlet passage communicates with the transfer line and the gas inlet, respectively. The method of claim 9,
The gas inlet passage includes a first through hole and a second through hole,
The chamber assembly, characterized in that the second through-hole is provided in plurality and surrounds the first through-hole. The method of claim 10,
The chamber assembly, characterized in that the diameter of the second through hole is provided smaller than the diameter of the first through hole. The method of claim 11,
The first through-hole has a diameter ranging from 20 mm to 30 mm, and the second through hole has a diameter ranging from 1 mm to 3 mm. The method of claim 9,
The chamber assembly, characterized in that the length of the insulating member in a direction perpendicular to the electrode plate is provided not less than 40 mm. The method of claim 1,
Further comprising a heating assembly,
The heating assembly is installed on the upper portion of the electrode plate, the chamber assembly, characterized in that installed surrounding the circumferential direction of the electrode plate. The method of claim 14,
Further comprising a shield case and a ring-shaped upper cover to be all ground,
Among them, the flow equalization member is mounted inside the ring-shaped upper cover,
The shield case is installed above the ring-shaped upper cover, and covers the electrode plate and the heating assembly therein together with the ring-shaped upper cover. In the reaction chamber,
A chamber assembly according to any one of claims 1 to 6 and 8 to 15, comprising a cavity and a restraining ring,
Among them, an upper portion of the cavity is provided with an opening, an exhaust port is provided at the bottom of the cavity, and the chamber assembly is installed on the upper portion of the cavity,
The constraining ring is installed in the cavity and is used to constrain the distribution of plasma.

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