KR100963413B1 - Magnetron sputtering apparatus - Google Patents

Abstract

The present invention relates to a magnetron sputtering apparatus, and more particularly, to a magnetron sputtering apparatus having a single straight magnet array, which is easy to manufacture and enables sputtering of a large sized substrate. The magnetron sputtering apparatus according to the present invention includes a target fixing portion for fixing a target, a permanent magnet portion for applying a magnetic field to the target, a substrate support for supporting a substrate at a position opposite to the target, and for forming a plasma. And a power supply device for supplying a bias voltage to the target, wherein the permanent magnet part includes a single row of magnets, and the magnet rows are configured such that the left and right sides of the magnet row are N poles or S poles in the longitudinal direction. By increasing, even a sputtering apparatus having a simple structure can easily sputter a large sized substrate.

Description

Magnetron Sputtering Device {MAGNETRON SPUTTERING APPARATUS}

The present invention relates to a magnetron sputtering apparatus, and in particular, the permanent magnet portion includes a magnet consisting of a single row, the magnet row is configured so that the left and right in the longitudinal direction to the N pole or S pole is easy to manufacture and size A magnetron sputtering apparatus capable of sputtering a large substrate.

Sputtering, called physical vapor deposition (PVD), is the most common method of depositing layers of metal and related materials in semiconductor integrated circuit fabrication. In addition, sputtering is a widely used method in thin film coating, and is used in various industrial fields such as display, optical, and abrasion resistant coating.

Conventional magnetron sputtering techniques are widely used as a technique for forming a film on a substrate using a target facing the substrate surface. 1 and 2 show a conventional magnetron sputtering apparatus. The magnetron sputtering apparatus consists of a chamber on which a substrate is placed on a substrate pedestal, a target made of sputter deposition, typically a metal, is installed on the substrate, and a magnetron is located on the rear of the target, and the chamber is sealed. .

As shown in FIG. 2, the magnetron sputtering device creates a magnetic field for electron and ion confinement in front of the target. For example, when argon (Ar), which is a chemically inert gas, flows into the chamber, an argon is plasmaized by applying an appropriate voltage between the target and the shield. This plasma is limited in the region near the target by the magnetic field. As the positively ionized Ar ions impinge on the negatively charged target, the target atoms or atomic clusters are sputtered from the target by momentum transfer. Particles sputtered from the target are deposited on the substrate to form a film of the target material.

In recent years, wafer sizes have continued to increase, and larger wafer sizes have increased the number of integrated circuit devices on a single substrate. However, larger wafer sizes place more demands on the sputtering system. For example, one of the requirements of sputtering systems used in semiconductor processing is the deposition of uniformly thick layers over the entire substrate surface. Poor uniformity results in variations in device yield and device performance. Larger substrate sizes make it more difficult to achieve significant levels of uniformity requirements. Likewise, as the size of the integrated circuit device becomes smaller and smaller, the uniformity level of the sputtered film also needs to be higher.

However, in the case of the conventional magnetron sputtering apparatus having the structure as shown in FIG. 2, in order to sputter a large sized substrate, the structure and arrangement of the target and the magnet must be enlarged corresponding to the substrate. In the conventional magnetron sputtering apparatus, the larger the magnet structure and arrangement, the greater the weight of the apparatus, and the more effort is required to manufacture or maintain the apparatus. Furthermore, if the structure and arrangement of the target and magnet are simply increased, the uniformity of the magnetic field formed on the front surface of the target is not high, and thus, the deposition uniformity is not high.

Meanwhile, as another method for depositing a large diameter substrate, a technique of increasing the efficiency of a target by rotating a magnet as shown in FIG. 3 is known. However, this technique still has the problem that the erosion of the target is uneven.

In addition, in the conventional sputtering apparatus, as shown in FIG. 4, Fe boxes were attached to both sides of the cathode in order to increase the efficiency of the target. However, such a conventional sputtering apparatus is not only complicated in the apparatus but also has not caused uniform target erosion.

The present invention has been made to solve the above problems, to provide a magnetron sputtering device that can increase the uniformity of deposition during deposition of the substrate by increasing the uniformity of the magnetic field formed on the front surface of the target over a large area.

In addition, the present invention provides a magnetron sputtering device having a simple structure, easy to manufacture and use, and high in use efficiency.

A magnetron sputtering apparatus for achieving the object of the present invention as described above, a target fixing portion for fixing the target, a permanent magnet portion for applying a magnetic field to the target, a substrate supporting the substrate at a position opposite to the target And a support and a power supply for supplying a bias voltage to the target to form a plasma, wherein the permanent magnet part comprises a magnet row arranged in one row.

The present invention has the effect of providing a sputtering device with a simple structure, which is possible to sputter over a wide area, the structure is simple, easy to manufacture and use, and high use efficiency.

In addition, it is possible to increase the deposition uniformity during deposition of the substrate.

In the present invention, sputtering of a large sized substrate is possible simply by changing only the magnet length, thereby facilitating manufacture of the device.

In addition, the present invention overcomes the limitations of the conventional circular magnetron sputtering source, which has a complicated arrangement of magnets and low target use efficiency, and uniformly erodes the front surface of the target as well as uniformly coating a large area substrate with a simple array of magnets. This improves the target use efficiency.

In addition, even in a balanced magnetron sputtering apparatus, as in the present invention, by using a magnet string configured so that the left and right sides are N poles or S poles in the longitudinal direction, the structure of the apparatus is simplified and uniform film formation over the area is possible. .

In order to achieve the above object, the sputtering source of the present invention, a target fixing portion for fixing the target, and a permanent magnet portion for applying a magnetic field to the target, the permanent magnet portion is a magnet arranged in a row It is composed of heat.

Here, the left and right sides of the magnet string are preferably configured to be N poles or S poles, respectively.

In the sputtering source according to the present invention, Fe boxes may not be attached to both sides of the cathode.

In addition, the sputtering apparatus according to the present invention includes a target fixing portion for fixing a target, a permanent magnet portion for applying a magnetic field to the target, a substrate support for supporting a substrate at a position opposite to the target, and to form a plasma And a power supply for supplying a bias voltage to the target, wherein the permanent magnet part includes a single column of magnets, and the magnet rows are configured such that the left and right poles are N poles or S poles in the longitudinal direction. It is done.

In the magnet row of the present invention, one or more magnet pieces may be arranged in a row.

Magnet train according to the present invention can adjust the length, height and width according to the size of the substrate.

Circular mark netron sputtering device according to the present invention, a circular target mounting portion for fixing and insulating a circular target, a permanent magnet portion disposed in a position opposite to the target and including a permanent magnet closed circuit for applying a magnetic field to the target And a rotating part for rotating the permanent magnet part along a circular track parallel to the target surface, wherein the permanent magnet part includes a plurality of magnet rows, wherein the plurality of magnet rows are mutually based on a circular axis of the circular permanent magnet part. Magnet rows having the same length are disposed to face each other, and the magnet rows are configured such that the left and right sides are N poles or S poles in the longitudinal direction.

The flat plate magnetron sputtering apparatus according to the present invention includes a target settling unit for arranging a target, a cooling unit for cooling the target, and a rear surface of the target at a predetermined distance from the target and having a permanent magnet closed circuit to provide a magnetic field to the target. A permanent magnet portion to be applied and a rotating portion for rotating the permanent magnet portion along an elliptic orbit parallel to the target surface, wherein the permanent magnet portion includes a row of permanent magnets, the row of permanent magnets in a longitudinal direction It is characterized in that the left and right are configured to be the N pole or the S pole.

Hereinafter, a sputtering apparatus according to the present invention will be described in detail with reference to the drawings.

5 shows a magnetron sputtering apparatus of the present invention. In the magnetron sputtering apparatus of the present invention, like the conventional magnetron sputtering apparatus, a substrate 12 is placed on a substrate pedestal 10, and a target 14 made of a material to be sputter-deposited, typically a metal, on the substrate 14 ) Is installed, the magnet 30 is located on the back of the target, and consists of a chamber for sealing them.

However, in the present invention, unlike the magnetron sputtering apparatus of the prior art, the magnet 30 is composed of only one string. In addition, the magnet of the conventional magnetron sputtering device is made of S and N poles at the top and bottom, but the magnet of the magnetron sputtering device of the present invention is made of S pole or N at the left or right.

As shown in FIG. 5, the magnetron sputtering apparatus of the present invention also forms a magnetic field for electron and ion confinement in front of the target. In other words, when argon (Ar), which is a chemically inert gas, is introduced into the chamber, an appropriate voltage is applied between the target and the shield to make the argon plasma, and positively ionized Ar ions collide with the negatively charged target. By momentum transfer, target atoms or atomic clusters are sputtered from the target.

However, in the present invention, unlike the magnetron sputtering apparatus of the prior art, since only one row of magnets is used, it is easy to form a magnetic field over a wide area by increasing the length of the magnet 30. Therefore, by increasing only the magnet length in the magnetron of the sputtering apparatus, it is possible to easily sputter a large substrate.

6 shows a schematic structure of a magnetron according to the present invention. The magnetron of the present invention has a structure in which a row of magnets 30 are disposed on the cathode 31. As shown in FIG. 5, the polarity of the magnet in the magnetron according to the present invention is the N pole on the left side and the S pole on the right side in the longitudinal direction of the magnet. On the contrary, the right side is the N pole and the left side is the S pole.

In the magnetron of the present invention, the magnet 30 may be made of one long magnet, or may be made of several magnet pieces. 6 shows an embodiment of a magnetron constructed by using a plurality of magnet pieces. The size of the magnet piece can be adjusted according to the size of the substrate on which sputtering is performed. FIG. 7A is an example of sputtering source using three magnet pieces, FIG. 7B is a sputtering source using two magnet pieces, and FIG. 7C shows an example of sputtering source using one magnet piece. Preferably, the length of one magnet piece may be about 40 to 60 mm, a height of about 15 to 25 mm, and a width of about 5 to 15 mm.

8 is a photograph showing the formation of a magnetron discharge using a sputtering apparatus according to the present invention. In this embodiment, a magnet was placed in a rectangular cathode, the length of the used magnet was 30 to 200 mm (preferably about 100 mm), the height was 5 to 50 mm (preferably about 20 mm), and the width was about 5 to 20 mm (preferably). About 10 mm).

In addition, the magnet used NdFeB bar magnet. Argon gas was injected into the sputtering apparatus as the sputtering gas, and the pressure was maintained at 0.3 to 15 Pa (preferably 0.5 Pa). In addition, the DC discharge current applied 0.5-4 A (preferably about 1 A). As shown in Fig. 7, it can be seen that the sputtering device having only the straight magnet arrangement according to the present invention generates sufficient magnetron discharge to generate sputtering even at low pressure.

As described above, the sputtering apparatus according to the present invention using the straight magnet arrangement has a simple structure in which magnetron discharges sufficient to generate sputtering are formed. The sputtering source of the straight magnet structure according to the present invention can be applied to circular cathodes as well as rectangular cathodes. Moreover, the size of the magnet used adjusts length, height, and width according to a sputtering object. In addition, the optimum sputtering conditions are maintained by adjusting the sputtering gas pressure and the applied power according to the size of the straight magnet.

FIG. 9 illustrates an embodiment in which a plurality of straight magnet arrangements as shown in FIG. 7 are arranged and used in a circular magnetron sputtering apparatus. As shown in FIG. 9, a plurality of permanent magnet rows 31 are arranged on the permanent magnet part 30, and the permanent magnet rows 31 are configured such that the left and right sides are N poles or S poles in the longitudinal direction. do. Each of the permanent magnet rows of the plurality of permanent magnet rows 31 is configured such that magnet rows having the same length are disposed facing each other with respect to the circular axis of the circular permanent magnet portion. The permanent magnet part 30 may be a closed circuit mounting part in which nickel is plated on iron, which is a magnetic material.

The permanent magnet part is designed to form a uniform symmetric magnetic field and control the substrate current density when the permanent magnet 31 is closed circuit. Although not shown, the target is disposed to face the permanent magnet part, and as the permanent magnet part 30 rotates, a discharge track is formed on the target surface at a position corresponding to the permanent magnet closed circuit by the closed circuit of the permanent magnet row 31. And a film is formed on the surface of the substrate.

In the case of the present invention, by adjusting the length and arrangement of the permanent magnet column 31 on the permanent magnet portion according to the size of the target and the substrate can be easily applied even in the case of a large substrate. In other words, in the case of the present invention, when the permanent magnet row 31 is disposed in the permanent magnet section 30, the length of the permanent magnet row 31 can be used for a substrate having a large size.

In addition, since the position of the permanent magnet column 31 in the permanent magnet portion 30 is easy to adjust, by adjusting the position of the permanent magnet column, a uniform discharge track is formed on the front of the target and the front of the target is uniformly eroded. It allows for area uniform coating.

10 is a partial cross-sectional view of a magnetron sputtering apparatus according to an embodiment of the present invention. As shown in FIG. 10, the magnetron sputtering apparatus is provided with a negative electrode target 12 for film formation and is fixed, and is disposed on the target settling portion 14 including an insulating material and behind the target 12. The permanent magnet closed circuit 20 and the permanent magnet closed circuit 20 which form a plurality of permanent magnet closed circuits spaced apart from the target by a predetermined distance from the cooling unit 16 for cooling the target 12 and a lower portion of the cooling unit 16 are formed. Rotating portion 30 for moving the permanent magnet closed circuit 20 in one direction along an elliptic orbit perpendicular to the target 12 surface.

10 also shows the unit magnetic field closed circuit of the permanent magnet closed circuit section 20. The unit magnetic field closed circuit is represented by a, b, and c in FIG. 10, respectively. Referring to the drawings, each unit research magnet closed circuit 21 includes a permanent magnet portion consisting of a row in the center.

As shown in FIGS. 7A to 7C, the permanent magnet part includes a single row of magnets, and the magnet rows are configured such that the left and right sides of the magnet row are N poles or S poles in the longitudinal direction, and the magnet rows are one or more. It can be made of a magnet piece.

That is, it may be made of one magnet as shown in FIG. 10A and may be made of two or three magnet pieces as shown in FIGS. 10B and 10C. In the present invention as described above, while forming a thin film on the substrate, the plurality of unit permanent magnet closed circuit 21 of the permanent magnet closed circuit unit 20 together with the rotational movement of the rotating unit 30 receives a driving force from the motor, for example Rotate According to the rotational movement of the unit permanent magnet closed circuit 21, the discharge track is uniformly formed on the entire target surface at the position of the corresponding target surface by the unit permanent magnet closed circuit 21, and the target front surface is uniformly eroded. A uniform film is formed on the surface of the substrate.

What has been described above has described the embodiments according to the present invention, and the present invention is not limited to the above-described embodiments, and as claimed in the following claims, it is usually in the field to which the present invention pertains without departing from the gist of the present invention. Those skilled in the art will be within the scope of the present invention to the extent that it can be modified.

1 is a perspective view schematically showing the structure of a conventional magnetron sputtering source,

2 is a cross-sectional view taken along the line 'A-A' of FIG.

3 is a schematic diagram of a conventional magnetic circuit rotary sputtering device,

4 is a schematic representation of a conventional sputtering source with Fe boxes attached to both sides of the cathode,

5 is a schematic view of a sputtering apparatus according to the present invention,

6 shows a schematic structure of a sputtering source according to the present invention;

7 schematically illustrates the structure of a sputtering source of the present invention in accordance with various embodiments;

8 is a photograph showing a magnetron discharge formed using the sputtering apparatus of the present invention;

9 is a plan view showing an embodiment of a circular mark netron sputtering apparatus according to the present invention;

Figure 10 is a side view showing an embodiment of a flat plate magnetron sputtering apparatus according to the present invention.

* Description of the symbols for the main parts of the drawings *

10: substrate support 12: substrate

14: target 30: magnet

31: magnetron

Claims (18)

A target fixing part for fixing a target, a permanent magnet part for applying a magnetic field to the target, a substrate support for supporting a substrate at a position opposite the target, and supplying a bias voltage to the target to form a plasma Including a power supply, The permanent magnet unit includes a magnet composed of one row, and the magnet row is a magnetron sputtering apparatus, characterized in that the left and right in the longitudinal direction is configured to be the N pole or the S pole. The magnetron sputtering apparatus according to claim 1, wherein the magnet string comprises a plurality of magnet pieces. A target fixing part for fixing a target, and a permanent magnet part for applying a magnetic field to the target, The permanent magnet portion includes a single row of magnets, wherein the magnet rows are sputtered sources, characterized in that the left and right in the longitudinal direction is configured to be N pole or S pole. 4. The sputtering source according to claim 3, wherein the magnet string comprises a plurality of magnet pieces. 4. The sputtering source according to claim 3, wherein the size of the magnet string and the magnet piece is adjusted according to the size of the substrate to be sputtered. The sputtering source according to any one of claims 3 to 5, wherein the magnet string has a length of 30 to 200 mm, a height of 5 to 50 mm, and a width of 5 to 20 mm. A circular target mounting portion that fixes and insulates a circular target, a permanent magnet portion disposed at a position opposite to the target and including a permanent magnet closed circuit for applying a magnetic field to the target, and the permanent magnet portion parallel to the target surface. In the circular macronetron sputtering apparatus comprising a rotating portion for rotating along a circular track, The permanent magnet part includes a plurality of magnet rows, and the plurality of magnet rows are arranged to face magnet rows having the same length with respect to the circular axis of the circular permanent magnet part, and the magnet rows are left and right in the longitudinal direction. Circular mark netron sputtering device, characterized in that configured to be the N pole or S pole. 8. The circular mark netron sputtering apparatus according to claim 7, wherein the magnet string comprises a plurality of magnet pieces. 8. The circular marknetron sputtering apparatus according to claim 7, wherein the size of the magnet string and the magnet piece is adjusted according to the size of the substrate to be sputtered. 10. The circular magnetron sputtering apparatus according to any one of claims 7 to 9, wherein the magnet string has a length of 30 to 200 mm, a height of 5 to 50 mm, and a width of 5 to 20 mm. A target settlement part for arranging a target, a cooling part for cooling the target, a permanent magnet part which is spaced apart from the target by a predetermined distance on a rear surface of the target and has a permanent magnet closed circuit to apply a magnetic field to the target and the permanent magnet. A flat plate magnetron sputtering apparatus comprising a rotating portion for rotating a portion along an elliptic orbit parallel to the target surface, The permanent magnet unit includes a permanent magnet row consisting of a single row, the permanent magnet row is a flat plate magnetron sputtering device, characterized in that the left and right in the longitudinal direction is configured to be N pole or S pole. 12. The flat plate magnetron sputtering apparatus according to claim 11, wherein the magnet string comprises a plurality of magnet pieces. 12. The flat plate magnetron sputtering apparatus according to claim 11, wherein the sizes of the magnet rows and the magnet pieces are adjusted according to the size of the substrate to be sputtered. The flat plate magnetron sputtering apparatus according to any one of claims 11 to 13, wherein the magnet string has a length of 30 to 200 mm, a height of 5 to 50 mm, and a width of 5 to 20 mm. delete delete delete delete

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