KR102219774B1 - Sputter deposition apparatus for coating a substrate and a method of performing a sputter deposition process - Google Patents

Abstract

A sputter deposition apparatus is provided. The sputter deposition apparatus includes a plurality of cathode assemblies configured to sputter a target material in a sputter deposition process, each of the plurality of cathode assemblies including a rotatable target and a magnet assembly arranged within the rotatable target, the plurality of cathode assemblies Includes the outermost cathode assembly. The sputter deposition apparatus further includes a plurality of anode elements configured to affect a plasma generated in the sputter deposition process, the plurality of anode elements including an outermost anode element. The sputter deposition apparatus further includes an auxiliary magnet assembly. The outermost cathode assembly, outermost anode element and auxiliary magnet assembly are arranged in this order, and the auxiliary magnet assembly is configured to provide a magnetic field to compensate for boundary effects in the outer region of the plasma.

Description

Sputter deposition apparatus for coating a substrate and a method of performing a sputter deposition process

[0001] The embodiments described herein relate to layer deposition by sputtering from a target. Some embodiments specifically relate to sputtering layers on large area substrates. Some embodiments relate specifically to static deposition processes. The embodiments described herein specifically relate to a sputter deposition apparatus including a plurality of cathode elements and a plurality of anode elements.

[0002] Coated materials can be used in some applications and in some technical fields. For example, substrates for displays are often coated by a physical vapor deposition (PVD) process. Further applications of coated materials include insulating panels, organic light emitting diode (OLED) panels, as well as hard disks, CDs, DVDs, and the like.

[0003] Several methods are known for coating a substrate. For example, the substrates may be coated by a PVD process, a chemical vapor deposition (CVD) process, a plasma enhanced chemical vapor deposition (PECVD) process, or the like. Typically, the process is carried out in a process apparatus or process chamber in which the substrate to be coated is located. A vapor deposition material is provided to the device. In case a PVD process, such as sputtering, is used, the deposition material is present in the target in a solid phase. By hitting the target with energetic particles, atoms of the target material, ie the material to be deposited, are released from the target. The atoms of the target material are deposited on the substrate to be coated. Typically, a PVD process is suitable for thin film coatings.

[0004] In the sputtering process, a target is used to act as a cathode. Both are arranged in the vacuum deposition chamber. The process gas is filled into the process chamber at a low pressure (eg, approximately 10 ^{-2 mbar).} When a voltage is applied to the target and the substrate, electrons are accelerated to the anode, whereby ions of the process gas are generated by collision of electrons and gas atoms. The positively charged ions are accelerated toward the cathode. By impingement of ions, atoms of the target material are released from the target.

[0005] Cathodes that use a magnetic field to increase the efficiency of the process described above are known. By applying a magnetic field, electrons spend more time near the target, and more ions are created near the target. In known cathode assemblies, one or more magnet yokes or magnet bars are arranged to improve ion production and thus the deposition process.

However, there continues to be a need to improve such systems. In particular, due to increasing demands, there is a need to improve the efficiency and longevity of known coating devices.

In view of the above, an object of the present invention is to provide a method and a sputter deposition apparatus for performing a sputter deposition process that overcomes at least some of the problems in the art.

[0008] According to an embodiment, a sputter deposition apparatus is provided. The sputter deposition apparatus includes a plurality of cathode assemblies configured to sputter a target material in a sputter deposition process, each of the plurality of cathode assemblies including a rotatable target and a magnet assembly arranged within the rotatable target, the plurality of cathode assemblies Includes the outermost cathode assembly. The sputter deposition apparatus further includes a plurality of anode elements configured to affect a plasma generated in the sputter deposition process, the plurality of anode elements including an outermost anode element. The sputter deposition apparatus further includes an auxiliary magnet assembly. The outermost cathode assembly, outermost anode element and auxiliary magnet assembly are arranged in this order, and the auxiliary magnet assembly is configured to provide a magnetic field to compensate for a boundary effect in the outer region of the plasma.

[0009] According to a further embodiment, a method of performing a sputter deposition process is provided. The method includes providing a plasma. The method further includes sputtering the target material using the plurality of cathode assemblies. The method further includes affecting the plasma using a plurality of magnet assemblies arranged within the plurality of cathode assemblies. The method further includes affecting the plasma using the plurality of anode elements. The method further includes providing an auxiliary magnetic field in the outer region of the plasma to compensate for the boundary effect.

[0010] According to a further embodiment, a method of performing a sputter deposition process is provided. The method includes providing a plasma. The method further includes sputtering the target material using a plurality of cathode assemblies forming a deposition array. The method further includes providing a magnetic field to affect an outer region of the plasma, the magnetic field being provided by an auxiliary magnet assembly outside the deposition array.

[0011] The entire disclosure that enables one of ordinary skill in the art to practice is set forth in more detail in the remainder of this specification, including reference to the accompanying drawings:
1 shows a sputter deposition apparatus including an auxiliary magnet assembly according to embodiments described herein;
2 illustrates the boundary effect in the outer plasma region;
3 illustrates a sputter deposition apparatus according to embodiments described herein, including an auxiliary magnet assembly within a dummy cathode assembly;
4-5 show sputter deposition apparatuses according to embodiments described herein;
6-7 show examples of one-dimensional deposition array embodiments described herein; And
8A-8C show examples of magnet assemblies according to embodiments described herein.

[0012] Reference will now be made in detail to various embodiments, and one or more examples of various embodiments are illustrated in the drawings. Within the following description of the drawings, like reference numbers refer to like components. In general, only the differences for the individual embodiments are described. Each example is provided by way of explanation and is not intended as a limitation. In addition, features illustrated or described as part of an embodiment may be used with respect to or in conjunction with other embodiments, to yield another additional embodiment. The description is intended to include such modifications and variations.

[0013] Embodiments described herein relate to apparatus and methods for coating a substrate. In the coating process, a layer of target material is deposited on a substrate. The terms "coating process" and "deposition process" are used synonymously.

[0014] A sputter deposition apparatus according to embodiments described herein includes several cathode assemblies. As used herein, the term “cathode assembly” is to be understood as an assembly adapted to be used as a cathode in a coating process such as a sputter deposition process.

[0015] The cathode assembly may include a rotatable target. The rotatable target may be rotatable about an axis of rotation of the rotatable target. The rotatable target can have a curved surface, such as a cylindrical surface. The rotatable target can be rotated about an axis of rotation, which is the axis of a cylinder or tube. The rotatable target may comprise a backing tube. A target material forming the target, which may contain the material to be deposited on the substrate during the coating process, may be mounted on the backing tube.

[0016] The cathode assembly may include a magnet assembly. The magnet assembly can be arranged within the rotatable target of the cathode assembly. The magnet assembly may be arranged such that the target material sputtered by the cathode assembly is sputtered toward the substrate. The magnet assembly can generate a magnetic field. The magnetic field may cause one or more plasma regions to form near the magnetic field during the sputter deposition process. The position of the magnet assembly within the rotatable target affects the direction in which the target material leaves the cathode assembly and is sputtered during the sputter deposition process.

[0017] A sputter deposition apparatus according to embodiments described herein includes a plurality of anode elements, such as anode bars. The anode element is configured to affect the plasma generated in the deposition process, specifically to affect it electrically. For example, the plasma may contain charged particles, such as electrons, for example. The anode element can be configured to attract charged particles, such as electrons, of the plasma. Thus, for example, a return path for charged particles, back to the power generator of the device, may be provided by a plurality of anode elements.

[0018] The embodiments described herein relate to methods and sputter deposition apparatuses for performing a sputter deposition process, wherein the boundary effect associated with the outermost cathode assemblies of the deposition array is one or more arranged at the ends of the deposition array. It can be compensated for by auxiliary magnet assemblies.

1 illustrates a sputter deposition apparatus 100 according to an embodiment. The sputter deposition apparatus 100 includes a plurality of cathode assemblies 110 forming a deposition array. The plurality of cathode assemblies 110 are configured to sputter a target material towards a substrate 180, such as a large area substrate.

In the exemplary embodiment illustrated in FIG. 1, the plurality of cathode assemblies 110 is composed of two cathode assemblies, that is, a cathode assembly 112 on the left and a cathode assembly 114 on the right. According to embodiments that can be combined with other embodiments described herein, the plurality of cathode assemblies 110 is an even number of cathode assemblies, such as 2, 4, 6, 10, 12 Or may consist of or include even more cathode assemblies.

[0021] The cathode assembly 112 includes a rotatable target 122 (ie, a tubular target or a rotary target), a magnet assembly 132 arranged in the rotatable target 122, and a rotation axis 142. Similarly, the cathode assembly 114 includes a rotatable target 124, a magnet assembly 134 arranged within the rotatable target 124 and a rotation axis 144. Rotatable targets 112 and 114 are configured to rotate the target material about their rotation axes 142 and 144, respectively. The target material of the cathode assemblies 112 and 114 is sputtered towards the substrate 180 to coat the substrate 180, such as in a static sputter deposition process. According to embodiments that may be combined with the embodiments described herein, the rotatable target may comprise a target material arranged along a curved surface, may be cylindrically shaped, and/or a backing tube ( backing tube).

[0022] The sputter deposition apparatus 100 includes a plurality of anode elements 160, for example, anode bars. In the exemplary embodiment illustrated in FIG. 1, the plurality of anode elements 160 are made up of three anode elements 162, 164 and 166. The anode element 162 is an outermost anode element, and the anode element 164 is an additional outermost anode element among the plurality of anode elements 160. According to embodiments that can be combined with other embodiments described herein, the plurality of anode elements 160 is an odd number of anode elements, such as 3, 5, 7, 11, 13 Or it may consist of or include even more anode elements. The total number of anode elements included in the plurality of anode elements 160 may be one greater than the total number of cathode assemblies included in the plurality of cathode assemblies 110. According to some embodiments that may be combined with other embodiments described herein and as shown in FIG. 1, a plurality of cathode assemblies 110 and a plurality of anode elements 160 are arranged alternately. Can be.

[0023] The sputter deposition process performed by the sputter deposition apparatus 100 includes providing a plasma 190. The shape, position, distribution, and/or density of the plasma 190 may be affected by magnetic fields generated by magnetic assemblies included in the plurality of cathode assemblies 110. The magnetic field generated by the magnet assembly, such as the magnet assembly 132 or 134 shown in FIG. 1, can cause one or more plasma regions of increased density to form near the magnet assembly during the sputter deposition process.

[0024] The plasma 190 can also be affected by a plurality of anode elements 160 that can provide a return path for electrons of the plasma back to the power generator of the sputter deposition apparatus 100. .

[0025] The sputter deposition apparatus 100 shown in FIG. 1 includes an auxiliary magnet assembly 172 provided on opposite ends of a plurality of cathode assemblies 110 (ie, deposition array) and an additional auxiliary magnet assembly ( 174). In the exemplary embodiment shown in FIG. 1, auxiliary magnet assembly 172 and additional auxiliary magnet assembly 174 are standalone magnet assemblies. In particular, these auxiliary magnet assemblies are not included in the cathode assembly. Alternative embodiments involving auxiliary magnet assemblies, eg arranged in dummy cathode assemblies, are also contemplated and will be discussed below.

[0026] An auxiliary magnet assembly, such as, for example, auxiliary magnet assembly 172 or additional auxiliary magnet assembly 174 is configured to provide a magnetic field. The magnetic field provided by the auxiliary magnet assembly will sometimes be referred to herein as an “ancillary magnetic field”.

According to embodiments that may be combined with other embodiments described herein, the magnetic field provided by the auxiliary magnet assembly is configured to compensate for the boundary effect in the outer region of the plasma 190.

[0028] For example, in the case of a plurality of cathode arrangements 110 arranged along a linear deposition array (or somewhat curved but essentially linear deposition array) along a left-right direction, here The outer region of the plasma as described may refer to the region associated with the rightmost or leftmost cathode assembly of the plurality of cathode assemblies 110. FIG. 1 schematically shows the outer region 192 on the left, near the cathode assembly 112 and near the outermost anode element 162. FIG. 1 also schematically shows an additional outer section 194 on the right, near the cathode assembly 114 and near the additional outermost anode element 164. The outer zone 192 and the additional outer zone 194 are also illustrated for a larger deposition array, eg, for a plurality of cathode assemblies 160 comprising four cathode assemblies in FIG. 4. In addition, the outer region 192 is provided on the left side of the cathode assembly 112, i.e., the deposition array near the leftmost cathode assembly of the plurality of cathode assemblies 110 and near the outermost anode element 162. An additional outer zone 194 is provided on the right side of the deposition array near the cathode assembly 114, i.e., the rightmost cathode assembly of the plurality of cathode assemblies 110 and near the additional outermost anode element 164 do.

[0029] According to embodiments that can be combined with other embodiments described herein, the outer zone of the plasma 190, such as the outer zone 192 or the additional outer zone 194, comprises a plurality of cathode assemblies. The outermost of 110 may be a cathode assembly, such as a plasma region associated with or near the cathode assembly 112 or the cathode assembly 114. The distance from the outer region of the plasma to the outermost cathode assembly among the plurality of cathode assemblies 110 may be smaller than the distance from the outer region of the plasma to the inner cathode assembly among the plurality of cathode assemblies 110.

Additionally or alternatively, the outermost region of the plasma 190 may include an outermost anode element, such as an outermost anode element 162 or an outermost anode element 164 of the plurality of anode elements 160 It may be an associated or near plasma region. The distance from the outer region of the plasma to the outermost anode element of the plurality of anode elements 160 may be smaller than the distance from the outer region of the plasma to the inner anode element of the plurality of anode elements 160.

[0031] Also additionally or alternatively, the outer region of the plasma 190 is an auxiliary magnet assembly, such as a plasma region associated with or near the auxiliary magnet assembly 172 or additional auxiliary magnet assembly 174. I can.

[0032] The boundary effect in the outer region of the plasma is compensated through the auxiliary magnet assembly according to the embodiments described herein. Such a boundary effect can be reduced or even avoided for devices according to embodiments described herein.

[0033] In order to provide a better understanding of the boundary effects avoided by the embodiments described herein, below, which does not include an auxiliary magnet assembly for compensating the boundary effect according to the embodiments described herein. A discussion of devices is given. In such devices, boundary effects may be present in particular.

[0034] The boundary effect described herein is, in devices that do not include an auxiliary magnet assembly according to the embodiments described herein, the characteristics of the plasma in the outer regions of the plasma compared to the inner regions of the plasma. , For example, can have different distributions, densities or shapes.

For example, FIG. 2 shows an apparatus 200 including an array of anode bars and a cathode array within a processing chamber 210. The cathode array includes a leftmost cathode assembly 212, a rightmost cathode assembly 214, and inner cathode assemblies 216, 217, 218 and 219. The array of anode bars includes a leftmost anode bar 262, a rightmost anode bar 264 and inner anode bars 266, 267, 268, 269 and 270. The device 200 does not include an auxiliary magnet assembly according to the embodiments described herein. Plasma 190 is shown. The outer zone 292 and the outer zone 294 of the plasma 190 are associated with the leftmost and rightmost cathode assemblies 212 and 214, respectively. The inner regions 296, 297, 298 and 299 of the plasma 190 are associated with the inner cathode assemblies 216, 217, 218 and 219, respectively. As shown, the plasma density of the inner zones 296, 297, 298 and 299 are substantially similar to each other or even substantially periodic. The boundary effect occurs in the outer regions 292 and 294. In particular, the plasma density of these outer regions is substantially different from the density of the inner regions of the plasma. As shown, high-density plasma regions (indicated by dark regions) are formed near the leftmost cathode assembly 212 and the rightmost cathode assembly 214. Specifically, high-density plasma regions are formed near the leftmost anode bar 262 and the rightmost anode bar 264 because plasma electrons are electrically attracted toward these outermost anode bars. In contrast, such high density plasma regions are not formed near the inner anode bars 266, 267, 268, 269 and 270, because these inner anode bars are magnetic assemblies (not shown) in the cathode assemblies of the cathode array. This is because it undergoes magnetic shielding due to the magnetic fields provided by

In other words, in the apparatus 200 shown in FIG. 2, which does not include an auxiliary magnet assembly, the plasma density may be substantially periodic with respect to the inner cathode assemblies and inner anode bars, but this periodicity is It breaks in the outer zones 292 and 294.

According to embodiments described herein, one or more auxiliary magnet assemblies are provided to compensate for the boundary effects described above. Referring back to FIG. 1, an auxiliary magnet assembly 172 may be provided. As shown, the auxiliary magnet assembly 172 may be arranged on the left side of the outermost anode element 162, that is, on the left side of the leftmost anode element. As further shown, additional auxiliary magnet assemblies 174 may be provided at opposite ends of the deposition array. An additional auxiliary magnet assembly 174 may be arranged on the right side of the outermost anode element 164, ie to the right of the rightmost anode element.

[0038] Embodiments described herein make it possible to reduce or even avoid the boundary effect in the outer regions 192 and 194 of the plasma. Through the auxiliary magnetic fields provided by the auxiliary magnet assemblies, the plasma conditions for the outer plasma regions 192 and 194 are substantially the same as the plasma conditions for the inner plasma region. In particular, through the auxiliary magnet assemblies, the magnetic field conditions and accessibility for the plasma electrons to the outermost anode elements 162 and 164 are substantially the same as for the inner anode element(s). For example, due to the auxiliary magnetic fields, magnetic shielding is the outermost of the plurality of anode elements, as opposed to the device 200 shown in Fig. 2, in which only the inner anode elements undergo such magnetic shielding, as discussed above. Elements and inner anode elements may similarly suffer.

By providing the same or similar plasma conditions for all cathode assemblies of the deposition array, the lifetime and utilization of the outermost cathode assemblies of the deposition array, and hence the entire deposition array, can be increased. In particular, in devices that do not include auxiliary magnet assemblies according to embodiments described herein, due to different plasma conditions in the outer regions of the plasma compared to the inner regions, the outermost cathode assemblies exhibit increased erosion. You can suffer. Thus, in such devices, the life of the outermost cathode assemblies is reduced compared to the inner cathode assemblies. Since the lifetime of the array of cathode assemblies is determined by the target with the shortest lifetime, this means that the lifetime of the entire deposition array is reduced thereby. In contrast, in apparatuses according to embodiments described herein, the boundary effect in the outer plasma regions is compensated and the plasma conditions are the same for all cathode assemblies of the deposition array. Thus, the outermost cathode assemblies of the deposition array do not undergo erosion increase, so that the life and utilization of the outermost cathode assemblies, and thus the entire deposition array, can be increased.

In consideration of the above, a sputter deposition apparatus for coating a substrate is provided. The sputter deposition apparatus includes a plurality of cathode assemblies configured to sputter a target material in a sputter deposition process. A plurality of cathode assemblies form a deposition array. Each of the plurality of cathode assemblies includes a rotatable target and a magnet assembly arranged within the rotatable target. The plurality of cathode assemblies includes an outermost cathode assembly, such as a cathode assembly 112. The sputter deposition apparatus further includes a plurality of anode elements configured to affect a plasma generated in the sputter deposition process, the plurality of anode elements including an outermost anode element, such as an outermost anode element 162. The sputter deposition apparatus further includes an auxiliary magnet assembly, such as an auxiliary magnet assembly 172. The outermost cathode assembly, the outermost anode element and the auxiliary magnet assembly are arranged in this order. The auxiliary magnet assembly is configured to provide a magnetic field to compensate for boundary effects in the outer region of the plasma.

[0041] According to an embodiment that can be combined with other embodiments described herein, the auxiliary magnet assembly is not arranged in the cathode assembly. For example, FIG. 1 shows the auxiliary magnet assembly 172 as a standalone magnet assembly that is not included in any cathode assembly. The auxiliary magnet assembly 172 may be configured to contact the processing gas during the sputter deposition process.

[0042] Embodiments described herein include, on the one hand, cathode assemblies belonging to the deposition array and thus specifically configured to sputter a target material in a sputter deposition process for coating a substrate, and on the other hand, deposition Include a distinction between "dummy" cathode assemblies that do not belong to the array.

[0043] The plurality of cathode assemblies 110 form a deposition array. It should be understood that each cathode assembly of the plurality of cathode assemblies 110, ie, each cathode assembly of the deposition array, is configured to sputter a target material in a sputter deposition process for coating a substrate. In particular, of the plurality of cathode assemblies as described herein, the “outermost cathode assembly” and “additional outermost cathode assembly” form part of the deposition array, and the target material in the sputter deposition process for coating the substrate It is configured to sputter.

[0044] In particular, according to embodiments, each cathode assembly of the plurality of cathode assemblies 110 is configured to rotate about its axis of rotation and be hit with particles, so that the target material is sputtered from its rotatable target. So that the substrate can be coated. Such a cathode assembly should be distinguished from a "dummy" cathode assembly. The dummy cathode assembly forms part of the sputter deposition apparatus and, in some cases, may be structurally similar or even identical to the cathode assembly belonging to the deposition array. However, the dummy cathode assembly may not form part of the deposition array and/or may be arranged outside the deposition array. The dummy cathode assembly is not configured to sputter a target material for coating a substrate, for example. In an example, the target of the dummy cathode assembly is not configured to rotate, such as during a sputter deposition process. In another example, the dummy cathode assembly may be arranged in a position offset with respect to the substrate to be coated, along the first direction 10, so that, unlike the cathode assemblies of the deposition array, the dummy cathode assembly directly faces the substrate. I never do that. Other examples for configuring a dummy cathode may be supplemented as long as the dummy cathode assembly is considered to be a cathode assembly that is not part of the deposition array.

[0045] According to some embodiments that may be combined with other embodiments described herein, the auxiliary magnet assembly is arranged within the dummy cathode assembly.

3 shows an apparatus 110 according to embodiments described herein, the apparatus 110 comprising a dummy cathode assembly 302. As shown, the dummy cathode assembly 302 may include a rotatable target 322 and a magnet assembly. The magnet assembly of the dummy cathode assembly 302 may be the auxiliary magnet assembly 172 according to embodiments described herein. In the sputter deposition process performed by the apparatus, the target material may be released or sputtered by each cathode assembly of the plurality of cathode assemblies 110, not by the dummy cathode assembly 302, to coat the substrate. I can. The dummy cathode assembly 110 does not form a part of the deposition array. The deposition array is schematically represented by zone 310 in FIG. 3. That is, the deposition array is formed by such cathode assemblies included in the region 310. As shown, the deposition array includes all of the cathode assemblies of the plurality of cathode assemblies 110 but does not include the dummy cathode assembly 302. The dummy cathode assembly 302 serves different purposes. The function of the dummy cathode assembly in the sputter deposition process is linked to the magnet assembly, which may be the auxiliary magnet assembly 172 according to embodiments described herein. While sputtering of the target material may be performed by a plurality of cathode assemblies 110, the auxiliary magnet assembly 172 of the dummy cathode assembly 302 is in the outer region of the plasma 190 as described herein. It can be configured to generate an auxiliary magnetic field to compensate for the boundary effect. Thus, for example, the auxiliary magnet assembly provided in the dummy cathode assembly as shown in FIG. 3 performs the same function as the independent auxiliary magnet assembly as shown in FIG. 1, for example.

[0047] According to an embodiment that can be combined with other embodiments described herein, a sputter deposition apparatus may include a substrate receiving region. Each cathode assembly of the plurality of cathode assemblies may face the substrate receiving region or may be arranged in front of the substrate receiving region. Each cathode assembly of the plurality of cathode assemblies may be configured to sputter a target material towards a substrate provided in the substrate receiving area. According to embodiments, the dummy cathode assembly may be arranged in a position offset with respect to the substrate receiving area along the first direction.

[0048] According to embodiments, the maximum distance along the first direction between the outermost cathode assembly 112 and the additional outermost cathode assembly 114 of the plurality of cathode assemblies 110 is in the first direction. It may be 50% to 150%, specifically 80% to 120% of the range of the following substrate receiving area.

As illustrated in FIGS. 1 and 3, the outermost cathode assembly of the plurality of cathode assemblies 110 may be the last cathode of the entire chain of cathodes, but need not be. In FIG. 1, the cathode assembly 112 is the outermost cathode assembly among the plurality of cathode assemblies 110, and is also the last cathode of the sputter deposition apparatus 100. As shown in FIG. 3, the cathode assembly 112 is the outermost cathode assembly of the plurality of cathode assemblies 110 (ie, the deposition array), but is not the last cathode of the device 100. Although the dummy cathode assembly 302 is the last cathode of the sputter deposition apparatus 100, the dummy cathode assembly 302 is not configured to sputter the target material towards the substrate, and thus a part of the plurality of cathode assemblies 110, i.e. , Not part of the deposition array.

[0050] In the present disclosure, the term "outermost cathode assembly" refers to a plurality of cathode assemblies 110, ie, the outermost of the cathode assemblies (ie, deposition array) configured to sputter a target material toward a substrate. It should be considered to mean a cathode assembly, such as the cathode assemblies 112 or 114 shown as the outermost cathode assemblies of the plurality of cathode assemblies 110 in the drawings.

According to embodiments that can be combined with other embodiments described herein, the outermost cathode assembly, the outermost anode element and the auxiliary magnet assembly are arranged in this order.

[0052] According to embodiments that can be combined with other embodiments described herein, the outermost cathode assembly, the outermost anode element, and the auxiliary magnet assembly are in a first direction, for example, the first direction shown in FIG. 10) can be arranged in this order. For example, in FIG. 1, the cathode assembly 112, the outermost anode element 162 and the auxiliary magnet assembly 172 are arranged in this order along the first direction 10. The provision that these components are arranged "in this order along a first direction" does not mean that these components are necessarily strictly arranged on an axis that passes through each of these components and extends in the first direction. . For example, according to an embodiment, as long as the outermost cathode assembly, outermost anode element and auxiliary magnet assembly are arranged in this order, one of these components may be in an offset position with respect to the axis passing through the two remaining components. have. In particular, the provision "arranged in this order along a first direction" means that the orthogonal projection of the center of the outermost anode element onto the first direction is equal to the orthogonal projection of the center of the auxiliary magnet assembly onto the first direction. It may refer to an arrangement between the orthogonal projections of the center of the outermost cathode assembly onto one direction.

The first direction as described herein may refer to, for example, the first direction 10 shown in FIG. 1. The plurality of cathode assemblies 110 and/or the plurality of anode elements 160 may be arranged along the first direction 10.

[0054] According to embodiments that can be combined with other embodiments described herein, the axis of rotation of the outermost cathode assembly, the axis of rotation of the additional outermost cathode assembly, the axis of rotation of the dummy cathode assembly, and/or An axis of rotation of any of the cathode assemblies of the plurality of cathode assemblies 110 may extend in a direction perpendicular to or substantially perpendicular to the first direction 10. The outermost anode element, the additional outermost anode element, or any of the anode elements of the plurality of anode elements may extend in a direction perpendicular or substantially perpendicular to the first direction 10.

[0055] According to embodiments that may be combined with other embodiments described herein, the axes of rotation of the cathode assemblies of the plurality of cathode assemblies may be parallel or substantially parallel to each other. Each of the plurality of anode elements may be parallel or substantially parallel to each other.

As described herein, substantially perpendicular directions may refer to directions that are at an angle of 75° to 105°, specifically 80° to 100°. Substantially parallel directions may refer to directions having an angle of -15° to 15°, specifically -10° to 10°.

[0057] The sputter deposition apparatus may include a substrate support for supporting a substrate. The substrate support may extend along the first direction. Each of the cathode assemblies of the plurality of cathode assemblies 110 may be arranged on the same side of the substrate support. Each cathode assembly of the plurality of cathode assemblies 110 may be configured to sputter material to coat the same surface of the substrate supported by the substrate support.

[0058] According to embodiments that may be combined with other embodiments described herein, the outermost cathode assembly and/or the outermost anode element is “outermost” with respect to the first direction. Specifically, when considering an orthogonal projection of each of the plurality of cathode assemblies onto the first direction of the cathode assembly, the orthogonal projection of the outermost cathode assembly may be the outermost of such orthogonal projections.

[0059] FIG. 4 shows a plurality of cathode elements 110 forming a deposition array. The plurality of cathode elements 110 shown in FIG. 4 are composed of cathode elements 112, 416, 418 and 114. Cathode assembly 112 is the outermost cathode assembly, and cathode assembly 114 is an additional outermost cathode assembly of the deposition array. Cathode assemblies 416 and 418 are inner cathode assemblies of the deposition array. The cathode assembly 416 includes a rotatable target and magnet assembly 436. The cathode assembly 418 includes a rotatable target and a magnet assembly 438. The plurality of anode elements shown in FIG. 4 are composed of anode elements 162, 464, 466, 468 and 164. The anode element 162 is the outermost anode element, and the anode element 164 is an additional outermost anode element. The outermost cathode assembly 112, the outermost anode element 162 and the auxiliary magnet assembly 172 are arranged in this order along the first direction 10. The additional outermost cathode assembly 114, the additional outermost anode element 164 and the additional auxiliary magnet assembly 174 are arranged in this order along the first direction 10. The auxiliary magnet assemblies 172 and 174 shown in FIG. 4 are independent magnet assemblies.

Alternatively, as shown in FIG. 5, auxiliary magnet assemblies 172 and 174 may be included in individual dummy cathode assemblies 302 and 304 according to embodiments described herein.

4 is a distance 482 from the auxiliary magnet assembly 172 to the outermost anode element 162 and from the outermost anode element 162 to the magnet assembly 132 of the outermost cathode assembly 112 Shows street 484. In the illustrated embodiment, distance 482 is equal to distance 484. In other words, the distance 482 from the auxiliary magnet assembly 172 to the outermost anode element 162 and the distance 484 from the outermost anode element 162 to the magnet assembly 132 of the outermost cathode assembly 112 484 ) Is approximately 50% of the distance from the auxiliary magnet assembly 172 to the magnet assembly 132 of the outermost cathode assembly 112.

[0062] According to an embodiment that can be combined with other embodiments described herein, the distance 482 from the auxiliary magnet assembly to the outermost anode element and/or the magnet assembly of the outermost cathode assembly from the outermost anode element The distance to 484 may be 30% to 70% of the distance from the auxiliary magnet assembly to the magnet assembly of the outermost cathode assembly. Specifically, such distance may be 40% to 60%, such as approximately 50%, of the distance from the auxiliary magnet assembly to the magnet assembly of the outermost cathode assembly.

[0063] When distances 482 and 484 are within the above-defined ranges, an auxiliary magnet assembly that compensates for boundary effects, since such substantially equal distances 482 and 484 provide spatial symmetry and periodicity. The effect is much better.

According to an embodiment that can be combined with other embodiments described herein, the distance from the auxiliary magnet assembly to the outermost anode element and/or the distance from the outermost anode element to the magnet assembly of the outermost cathode assembly is , May range from 30% to 70% of the distance between the auxiliary magnet assembly and the outermost cathode assembly.

[0065] According to an embodiment that can be combined with other embodiments described herein, the distance from the auxiliary magnet assembly 172 to the magnet assembly 132 of the outermost cathode assembly 112 is, the outermost cathode assembly ( It may be 80% to 120%, specifically 90 to 110%, such as about 100% of the distance between the magnet assembly 132 of 112) and the magnet assembly of the cathode assembly adjacent to the outermost cathode assembly. With substantially the same distances, these ranges of distances between individual magnet assemblies, specifically distances between subsequent magnet assemblies, the effect of the auxiliary magnet assembly compensating for the boundary effect can be further improved. There is, because such substantially equal distances also provide additional spatial symmetry and periodicity.

[0066] According to an embodiment that can be combined with other embodiments described herein, the auxiliary magnet assembly is movable with respect to the plurality of cathode assemblies 110 and/or with respect to the plurality of anode elements 160 Do. The auxiliary magnet assembly may be movable relative to the outermost cathode assembly and/or relative to the outermost anode element. The auxiliary magnet assembly may be movable in the first direction. The auxiliary magnet assembly may be movable to adjust the distance from the auxiliary magnet assembly to the outermost anode element and/or to adjust the distance from the auxiliary magnet assembly to the outermost cathode assembly. Due to such adjustable distances, a flexible system is provided that makes it possible to select an optimal position of the auxiliary magnet assembly to compensate for the boundary effect as described herein.

[0067] According to an embodiment that may be combined with other embodiments described herein, a plurality of cathode elements and a plurality of anode elements are alternately arranged. For example, FIG. 4 shows an alternating arrangement of cathode assemblies 112, 416, 418 and 114 for anode elements 162, 464, 466, 468 and 164, respectively. Alternating arrangements may include arrangements in which a single anode element is provided in each zone between two adjacent cathode assemblies.

[0068] According to an embodiment that can be combined with other embodiments described herein, the plurality of cathode assemblies 110 may include a second cathode assembly, such as the cathode assembly 114 shown in FIG. 1 or FIG. 4. And a cathode assembly 416 shown. The second cathode assembly and the outermost cathode assembly may be adjacent cathode assemblies among the plurality of cathode assemblies.

[0069] According to an embodiment that can be combined with other embodiments described herein, the plurality of anode elements 160 may include a second anode element, such as the anode element 166 shown in FIG. 1 or in FIG. 4. The illustrated anode element 464 is included. The second anode element and the outermost anode element may be adjacent anode elements among the plurality of anode elements.

[0070] Two cathode assemblies may be considered "adjacent" provided no additional cathode assembly is provided between the two cathode assemblies. Similarly, two anode elements may be considered “adjacent” if no additional cathode assembly is provided between the two anode elements. This definition of adjacency does not preclude that between two adjacent cathode assemblies, a component other than the cathode assembly may be provided. For example, as shown in the figures, an anode element may be provided between two adjacent cathode assemblies. Similarly, between two adjacent anode elements, a component other than an anode element may be provided, eg a cathode assembly may be provided between two adjacent anode elements.

[0071] According to an embodiment that can be combined with other embodiments described herein, the second cathode assembly, the second anode assembly, the outermost cathode assembly, the outermost anode element, and the auxiliary magnet assembly, specifically, It can be arranged in this order along one direction.

[0072] According to an embodiment that can be combined with other embodiments described herein, the magnet orientation of the auxiliary magnet assembly may be parallel or substantially parallel to the magnet orientation of the magnet assembly of the outermost cathode assembly. The magnet orientation of the magnet assembly may correspond to a direction in which the one or more poles extend outside the body of the magnet assembly.

[0073] The magnet orientations of each magnet assembly of the plurality of cathode assemblies may be parallel or substantially parallel to each other. Substantially parallel magnet orientations may include magnet orientations at an angle of up to 15%, specifically up to 10%.

[0074] Having substantially parallel magnet orientations provides an additional increased symmetry, such as periodicity, of the cathode arrangement. By aligning the magnet orientation of the auxiliary magnet assembly with the magnet orientation of the magnet assembly of the outermost cathode assembly, the symmetry and periodicity of the magnetic field can extend to the end of the system, further reducing the boundary effect.

[0075] The magnet assemblies of each of the cathode assemblies of the plurality of cathode assemblies 110 may have the same or similar design and the same or similar magnetic properties.

[0076] According to an embodiment that can be combined with other embodiments described herein, a plurality of cathode assemblies 110 and/or a plurality of anode elements 160 are arranged according to a one-dimensional arrangement. The one-dimensional arrangement is an arrangement along a straight line as shown in FIG. 4, an arrangement along an arc 610 as shown in FIG. 6, or inner cathode assemblies arranged along a straight line as shown in FIG. 7 and It may comprise an arrangement comprising outermost cathode assemblies arranged in a position offset with respect to that straight line.

According to an embodiment that may be combined with other embodiments described herein, the sputter deposition apparatus includes an additional auxiliary magnet assembly. The plurality of cathode assemblies may include an additional outermost cathode assembly. The plurality of anode elements may include an additional outermost anode element. For example, FIGS. 1 and 4 show an additional auxiliary magnet assembly 174, a cathode assembly 114 as an additional outermost cathode assembly, and an anode element 164 as an additional outermost anode element.

[0078] The additional outermost cathode assembly, the additional outermost anode element and the additional auxiliary magnet assembly may be arranged in this order, specifically along the first direction. The additional auxiliary magnet assembly is configured to provide a magnetic field to compensate for boundary effects in an additional outer region of the plasma, such as the additional outer region 194.

[0079] According to an embodiment that can be combined with other embodiments described herein, the auxiliary magnet assembly 172 and the additional auxiliary magnet assembly 174 are on opposite ends of the plurality of cathode assemblies 110. Are arranged in

[0080] The characteristics, features, and examples discussed with respect to the auxiliary magnet assembly 172, the outermost cathode assembly 112, the outermost anode assembly 162 and the outer region 192 of the plasma are in a corresponding manner. , An additional auxiliary magnet assembly 174, an additional outermost cathode assembly 114, an additional outermost anode assembly 164 and an additional outer region 194 of plasma. By way of example, similar to the auxiliary magnet assembly 172, the additional auxiliary magnet assembly 174 may be a standalone magnet assembly not included in any cathode assembly, or alternatively, an additional dummy cathode assembly, such as a cathode assembly. It can be included within 304.

[0081] According to an embodiment that can be combined with other embodiments described herein, the sputter deposition apparatus includes a vacuum chamber, such as the vacuum chamber 350 shown in FIG. 3. A plurality of cathode assemblies 110, a plurality of anode elements 160, an auxiliary magnet assembly 172 and/or an additional auxiliary magnet assembly 174 may be arranged in the vacuum chamber 350.

8A-8B illustrate a plan view and a side cross-sectional view of the magnet assembly 800 according to embodiments described herein, respectively. The magnet assembly 800 may be a magnet assembly included in the cathode assembly of the plurality of cathode assemblies 110, that is, a magnet assembly used in a deposition array. Alternatively, the magnet assembly 800 may be an auxiliary magnet assembly. For example, the magnet assembly 800 may be an auxiliary magnet assembly included in the dummy cathode assembly according to embodiments described herein.

The magnet assembly 800 has an inner pole 820 and an outer pole 810. The magnetic assembly 800 may be a magnetic yoke or may include a magnetic yoke. A cross-sectional side view of the magnet assembly 800 as shown in FIG. 8B has the shape of a fork, and the prongs of the fork represent inner and outer poles. The inner and outer poles may face the inner surface of the rotatable target on which the magnet assembly 800 is arranged. The inner pole 820 and/or the outer pole 810 may be formed of a plurality of permanent magnets.

8C shows a side view of the magnet assembly 870. The magnet assembly 870 may correspond to a part of the magnet assembly 800, for example, the outer pole 810 or a part thereof. The magnet assembly 870 may be an auxiliary magnet assembly 870 according to embodiments described herein. For example, the magnet assembly 870 may be an independent auxiliary magnet assembly.

[0085] According to an embodiment that can be combined with other embodiments described herein, a magnet assembly, such as a magnet assembly included in one of the plurality of cathode assemblies 110, may include a magnet pole. have. The magnet assembly may include an inner magnetic pole and/or at least one outer magnetic pole.

[0086] According to an embodiment that may be combined with other embodiments described herein, the auxiliary magnet assembly includes a permanent magnet or a plurality of permanent magnets. The auxiliary magnet assembly may be of the same type as the magnet assembly used within the cathode assembly of the deposition array. Compared to the magnet assembly used within the cathode assembly of the deposition array, the design of the auxiliary magnet assembly optimizes the effect provided by the auxiliary magnet assembly, i.e. compensates or reduces the boundary effects in the outer regions of the plasma. It can be adapted to let or avoid.

[0087] According to a further embodiment, a method of performing a sputter deposition process is provided. The sputter deposition process may be a magnetron sputtering process.

[0088] According to embodiments that can be combined with other embodiments described herein, the deposition process is a static deposition process. The difference between static and dynamic deposition is as follows, and particularly applies for large area substrate processing such as the processing of vertically oriented large area substrates. Dynamic sputtering is an in-line process in which a substrate is continuously or quasi-continuously moved near a deposition source. Dynamic sputtering has the advantage that the sputtering process can be stabilized before the substrates move into the deposition area, and then remain constant as the substrates pass next to the deposition source. However, dynamic deposition can have disadvantages, for example with respect to particle generation. This is particularly applicable for TFT backplane deposition. It should be noted that the term static deposition process, which is different compared to dynamic deposition processes, does not preclude every individual movement of the substrate, as will be appreciated by a person skilled in the art. Static deposition processes include, for example, static substrate position during deposition, oscillating substrate position during deposition, essentially constant average substrate position during deposition, dithering substrate position during deposition, wobbling during deposition ( wobbling) substrate position, or a combination thereof. Thus, a static deposition process can be understood as a deposition process to a static position, a deposition process to an essentially static position, or a deposition process to a partially static position of a substrate. Thereby, the static deposition process as described herein can be clearly distinguished from the dynamic deposition process, without the need for the substrate position relative to the static deposition process to be completely free of any movement of the substrate or of the cathode assemblies during deposition. .

[0089] The method includes providing a plasma. The method further includes sputtering the target material using the plurality of cathode assemblies. The method further includes affecting the plasma using a plurality of magnet assemblies arranged within the plurality of cathode assemblies. The method further includes affecting the plasma using the plurality of anode elements. The method further includes providing an auxiliary magnetic field in the outer region of the plasma to compensate for the boundary effect.

[0090] Embodiments of the method may be performed by a sputter deposition apparatus according to the embodiments described herein. In particular, an auxiliary magnetic field may be provided by an auxiliary magnetic assembly according to embodiments described herein.

[0091] According to an embodiment that may be combined with other embodiments described herein, the method may include providing a process gas. Process gas may be provided in the vacuum chamber. The auxiliary magnet assembly can be in contact with the process gas. For example, the auxiliary magnet assembly 172 shown in FIG. 1 may be in contact with a processing gas during a sputter deposition process.

[0092] According to an embodiment that can be combined with other embodiments described herein, the auxiliary magnetic field is provided by the auxiliary magnetic assembly of the dummy cathode assembly. According to embodiments that can be combined with other embodiments described herein, no target material for coating the substrate is sputtered by the dummy cathode assembly, while the auxiliary magnetic field is provided by the auxiliary magnet assembly.

[0093] According to an embodiment that can be combined with other embodiments described herein, the target material is sputtered towards or onto a substrate (specifically a large area substrate).

[0094] According to a further embodiment, a method of performing a sputter deposition process is provided. The method comprises: providing a plasma; Sputtering the target material using a plurality of cathode assemblies forming a deposition array; And providing a magnetic field to affect the outer region of the plasma, the magnetic field provided by the auxiliary magnet assembly outside the deposition array. Embodiments of the method may be performed by a sputter deposition apparatus according to embodiments described herein.

[0095] According to embodiments that can be combined with other embodiments described herein, the auxiliary magnet assembly is arranged in a dummy cathode assembly.

[0096] According to embodiments that may be combined with other embodiments described herein, the cathode assembly outside the deposition array is a dummy cathode assembly according to embodiments described herein.

[0097] According to embodiments that may be combined with other embodiments described herein, a method may include affecting a plasma using a plurality of magnet assemblies arranged within a plurality of cathode assemblies. .

[0098] According to embodiments that may be combined with other embodiments described herein, a method may include affecting a plasma using a plurality of anode elements.

[0099] According to embodiments that can be combined with other embodiments described herein, the substrate is a large area substrate.

[00100] The term "substrate" as used herein refers to both non-flexible substrates (eg, glass substrates, wafers, slices of transparent crystals such as sapphire, etc.) and flexible substrates (eg, web or foil). Includes all. According to some embodiments that may be combined with other embodiments described herein, the embodiments described herein may be utilized for display PVD, ie, sputter deposition on large area substrates for the display market. According to some embodiments, the large area substrates or respective carriers, wherein the carriers can carry one substrate or a plurality of substrates, may have a size of at least 0.67 m 2. The size can be from about 0.67 m 2 (0.73×0.92 m-Gen 4.5) to about 8 m 2, more specifically from about 2 m 2 to about 9 m 2 or even up to 12 m 2. The substrates or carriers on which structures, apparatuses, such as cathode assemblies and methods according to embodiments described herein are provided, may be large area substrates described herein. For example, a large area substrate or carrier may be GEN 4.5 corresponding to approximately 0.67 m 2 substrates (0.73 x 0.92 m), GEN 5 corresponding to approximately 1.4 m 2 substrates (1.1 m × 1.3 m), approximately 4.29 m 2 substrates ( GEN 7.5 corresponding to 1.95 m × 2.2 m), GEN 8.5 corresponding to approximately 5.7 m² substrates (2.2 m × 2.5 m), or even GEN 10 days corresponding to approximately 8.7 m² substrates (2.85 m × 3.05 m) I can. Even larger generations such as GEN 11 and GEN 12 and corresponding substrate areas can similarly be implemented.

[00101] According to some embodiments, which may be combined with other embodiments described herein, the target material is aluminum, silicon, tantalum, molybdenum, niobium, titanium, copper and oxides, nitrides, oxy- It may be selected from the group consisting of or including nitrides and alloys thereof. In particular, the target material may be selected from the group consisting of or including aluminum, copper and silicon. Reactive sputter processes can provide deposited oxides of these target materials. Sputter materials are also Indium-Tin-Oxide (ITO), Indium-Zinc-Oxide (IZO), Indium-Gallium-Zinc-Oxide (IGZO). -Oxide), Aluminum-doped Zinc-Oxide (AZO). These materials can be sputtered in a partially reactive manner. Nitrides or oxy-nitrides may also be deposited. Process gases for sputtering target materials, which may be used in connection with the embodiments described herein, include inert gases, such as argon and/or reactive gases, such as oxygen, nitrogen, hydrogen and ammonia (NH3), Ozone (O3), active gas, and the like may be included.

Claims (16)

As a sputter deposition apparatus 100,
A plurality of cathode assemblies 110 configured to sputter a target material in a sputter deposition process-each of the plurality of cathode assemblies includes a rotatable target and a magnet assembly arranged within the rotatable target, the plurality of cathode assemblies Including the outermost cathode assembly 112 -; And
A plurality of anode elements 160 configured to affect the plasma 190 generated in the sputter deposition process, the plurality of anode elements including an outermost anode element 162; and
In addition to the plurality of anode elements 160, the sputter deposition apparatus 100 further includes an auxiliary magnet assembly 172,
The outermost cathode assembly, the outermost anode element and the auxiliary magnet assembly are arranged in this order, and the auxiliary magnet assembly applies a magnetic field to compensate for the boundary effect in the outer region 192 of the plasma. Configured to provide,
Sputter deposition apparatus 100. The method of claim 1,
The auxiliary magnet assembly is not arranged in the cathode assembly,
Sputter deposition apparatus 100. The method of claim 1,
The auxiliary magnet assembly is arranged in a dummy cathode assembly 302,
Sputter deposition apparatus 100. The method according to any one of claims 1 to 3,
The auxiliary magnet assembly is movable with respect to the plurality of cathode assemblies and/or with respect to the plurality of anode elements,
Sputter deposition apparatus 100. The method according to any one of claims 1 to 3,
The distance 482 from the auxiliary magnet assembly to the outermost anode element and/or the distance 484 from the outermost anode element to the magnet assembly of the outermost cathode assembly is determined from the auxiliary magnet assembly to the outermost cathode. 30% to 70% of the distance of the assembly to the magnet assembly,
Sputter deposition apparatus 100. The method according to any one of claims 1 to 3,
The plurality of cathode elements and the plurality of anode elements are alternately arranged,
Sputter deposition apparatus 100. The method according to any one of claims 1 to 3,
The plurality of cathode assemblies includes a second cathode assembly (114, 416), and the plurality of anode elements includes a second anode element (166, 464),
The second cathode assembly and the outermost cathode assembly are adjacent cathode assemblies among the plurality of cathode assemblies, and the second anode element and the outermost anode element are adjacent anode elements among the plurality of anode elements,
The second cathode assembly, the second anode element, the outermost cathode assembly, the outermost anode element and the auxiliary magnet assembly are arranged in this order,
Sputter deposition apparatus 100. The method according to any one of claims 1 to 3,
The plurality of anode elements include a plurality of anode bars,
Sputter deposition apparatus 100. The method according to any one of claims 1 to 3,
The magnet orientation of the auxiliary magnet assembly is substantially parallel to the magnet orientation of the magnet assembly of the outermost cathode assembly,
Sputter deposition apparatus 100. The method according to any one of claims 1 to 3,
Further comprising an additional auxiliary magnet assembly (174),
The plurality of cathode assemblies includes an additional outermost cathode assembly 114, the plurality of anode elements includes an additional outermost anode element 164,
The additional outermost cathode assembly, the additional outermost anode element and the additional auxiliary magnet assembly are arranged in this order, and the additional auxiliary magnet assembly has a boundary effect in the additional outer zone 194 of the plasma. Configured to provide a magnetic field to compensate for,
Sputter deposition apparatus 100. The method according to any one of claims 1 to 3,
The auxiliary magnet assembly and the additional auxiliary magnet assembly are arranged on opposite ends of the plurality of cathode assemblies,
Sputter deposition apparatus 100. Providing a plasma 190;
Sputtering the target material using a plurality of cathode assemblies (110);
Influencing the plasma using a plurality of magnet assemblies arranged in the plurality of cathode assemblies;
Influencing the plasma using a plurality of anode elements 160; And
Providing an auxiliary magnetic field to the outer region 192 of the plasma to compensate for boundary effects,
The auxiliary magnetic field is provided by the auxiliary magnet assembly 172 spaced apart from the plurality of anode elements 160,
The outermost cathode assembly of the plurality of cathode assemblies 110, the outermost anode element of the plurality of anode elements 160, and the auxiliary magnet assembly 172 are arranged in this order,
How to perform a sputter deposition process. The method of claim 12,
Further comprising the step of providing a process gas,
The auxiliary magnet assembly is in contact with the process gas,
How to perform a sputter deposition process. The method of claim 12,
The magnetic field is provided by the auxiliary magnet assembly of the dummy cathode assembly 302,
How to perform a sputter deposition process. Providing a plasma 190;
Sputtering the target material using a plurality of cathode assemblies 110 forming a deposition array 310; And
Influencing the plasma by a plurality of anode elements (160);
Providing a magnetic field to affect the outer region 192 of the plasma,
The magnetic field is provided by an auxiliary magnet assembly 172 outside the deposition array,
The auxiliary magnet assembly 172 is spaced apart from the plurality of anode elements 160,
The outermost cathode assembly of the plurality of cathode assemblies 110, the outermost anode element of the plurality of anode elements 160, and the auxiliary magnet assembly 172 are arranged in this order,
How to perform a sputter deposition process. delete

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