CN110168697A - The method of sputtering deposition device and execution sputter deposition craft for coated substrate - Google Patents
The method of sputtering deposition device and execution sputter deposition craft for coated substrate Download PDFInfo
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- CN110168697A CN110168697A CN201780082722.8A CN201780082722A CN110168697A CN 110168697 A CN110168697 A CN 110168697A CN 201780082722 A CN201780082722 A CN 201780082722A CN 110168697 A CN110168697 A CN 110168697A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3417—Arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/342—Hollow targets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3438—Electrodes other than cathode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3461—Means for shaping the magnetic field, e.g. magnetic shunts
Abstract
Provide a kind of sputtering deposition device.The sputtering deposition device includes: multiple cathode assemblies, the multiple cathode assembly is configured in sputtered target material in sputter deposition craft, wherein each of the multiple cathode assembly includes rotatable target and the magnet assembly being arranged in the rotatable target, wherein the multiple cathode assembly includes outermost cathode assembly.The sputtering deposition device further comprises multiple anode components, and the multiple anode component is configurable for the plasma for influencing to generate in the sputter deposition craft, wherein the multiple anode component includes outermost anode component.The sputtering deposition device further comprises auxiliary magnet component.The outermost cathode assembly, the outermost anode component and the auxiliary magnet component are arranged in this order, wherein the auxiliary magnet component is configurable for providing magnetic field to compensate the boundary effect at the perimeter of the plasma.
Description
Technical field
Embodiment as described herein is related to by depositing from the layer of target as sputter.Some embodiments particularly exist
Sputtering layer on large-area substrates.Some embodiments particularly static sedimentation technique.Embodiment as described herein is specific
Ground is related to a kind of sputtering deposition device including multiple cathode elements and multiple anode components.
Background technique
Coating material can be used for several applications and several technical fields.For example, the substrate for display usually passes through
Physical vapour deposition (PVD) (PVD) technique is coated.The other application of coating material includes insulation board, Organic Light Emitting Diode
(OLED) panel and hard disk, CD, DVD etc..
If becoming known for the drying method of coated substrate.For example, PVD process, chemical vapor deposition (CVD) technique can be passed through
Or plasma enhanced chemical vapor deposition (PECVD) technique etc. carrys out coated substrate.Typically, locating for the substrate to be coated
Technique is executed in process equipment or processing chamber.Deposition materials are provided in a device.In the feelings using PVD process (such as sputtering)
Under condition, deposition materials are present in target with solid phase.By with high-energy particle bombardment target, target material, material i.e. to be deposited
The atom of material is ejected from target.The atomic deposition of target material is on substrate to be coated.Typically, PVD process is suitable for
Film coating.
In sputtering technology, target is used as cathode.The two is all disposed in vacuum deposition chamber.Technique in processing chamber
Gas is in low pressure (for example, about 10-2Mbar it is filled under).When voltage is applied to target and substrate, electronics is accelerated to sun
Pole, to generate the ion of process gas by the collision of electronics and gas atom.Positively charged ion is on cathode direction
Accelerate.It is hit by ion, the atom of target material is ejected from target.
It is known using magnetic field so as to improve above-mentioned technique efficiency cathode.By applying magnetic field, electronics is near target
It takes more time, and more polyion generates near target.In known cathode assembly, arrange one or more magnetic yokes or
Bar magnet generates to improve ion, and thus improves depositing operation.
However, there is a continuing need for improve this system.Especially since increase in demand, it is therefore desirable to improve known apply and cover
Standby efficiency and service life.
In view of above-mentioned, an object of the invention, which is to provide, overcomes one kind of at least some of the problems in this field to splash
Penetrate depositing device and a kind of method for executing sputter deposition craft.
Summary of the invention
According to one embodiment, a kind of sputtering deposition device is provided.The sputtering deposition device includes: multiple cathodes
Component, the multiple cathode assembly are configured in sputtered target material in sputter deposition craft, wherein the multiple yin
Each of pole component includes rotatable target and the magnet assembly being arranged in the rotatable target, wherein described more
A cathode assembly includes outermost cathode assembly.The sputtering deposition device further comprises multiple anode components, the multiple sun
Pole element is configurable for the plasma for influencing to generate in the sputter deposition craft, wherein the multiple anode component
Including outermost anode component.The sputtering deposition device further comprises auxiliary magnet component.It is the outermost cathode assembly, described
Outermost anode component and the auxiliary magnet component are arranged in this order, wherein the auxiliary magnet component is configurable for mentioning
The boundary effect at the perimeter of the plasma is compensated for magnetic field.
According to another embodiment, a kind of method for executing sputter deposition craft is provided.The method includes providing
Plasma.The method further includes with multiple cathode assembly sputtered target materials.The method further includes with cloth
The multiple magnet assemblies set in multiple cathode assemblies influence the plasma.The method further includes with multiple anodes
Plasma described in elements affect.The method further includes auxiliary magnetic field is provided at the perimeter of the plasma
To compensate boundary effect.
According to another embodiment, a kind of method for executing sputter deposition craft is provided.The method includes providing
Plasma.The method further includes multiple cathode assembly sputtered target materials with formation depositing array.The method
It further comprise the perimeter for providing magnetic field to influence the plasma, wherein the magnetic field is by outside the depositing array
The auxiliary magnet component in portion provides.
Detailed description of the invention
For those of ordinary skill in the art, in the remainder of this specification (including the reference to attached drawing)
More particularly illustrate the disclosure of complete and enlightening property, in which:
Fig. 1 shows the sputtering deposition device including auxiliary magnet component according to embodiment as described herein；
Fig. 2 shows the boundary effects at external heating region；
Fig. 3 shows the splashing including the auxiliary magnet component in illusory cathode assembly according to embodiment as described herein
Penetrate depositing device；
Fig. 4-5 shows the sputtering deposition device according to embodiment as described herein；
Fig. 6-7 shows the example of one-dimensional depositing array embodiment as described herein；And
Fig. 8 a-c shows the example of the magnet assembly according to embodiment as described herein.
Specific embodiment
With detailed reference to various embodiments, one or more examples of these embodiments are shown in figure.Attached
Being described below for figure is interior, and identical appended drawing reference refers to identical component.Generally, the difference relative to embodiment out of the ordinary is only described
It is different.Each example is provided in a manner of explaining, is limited without indicating.In addition it is shown that or being described as an embodiment
Partial feature can use in other embodiment or in conjunction with other embodiment to generate further embodiment.It retouches
It states and is intended to include such modifications and variations.
Embodiment as described herein is related to the device and method for coated substrate.In coating processes, by one layer of target
Material material is deposited on substrate.Term " coating processes " and " depositing operation " synonymous use.
Sputtering deposition device according to embodiment as described herein includes several cathode assemblies.As used herein, term
" cathode assembly " should be understood as the component for being suitable for being used as cathode in coating processes (such as sputter deposition craft).
Cathode assembly may include rotatable target.Rotatable target can surround the rotary shaft of rotatable target
Line rotation.Rotatable target can have curved surface, such as cylindrical surface.Rotatable target can be around as cylinder
Or the rotation axis rotation of the axis of pipe.Rotatable target may include penstock.The target material for forming target can be installed
In penstock, target material be may be embodied in coating processes to be deposited to the material on substrate.
Cathode assembly may include magnet assembly.Magnet assembly can be arranged in the rotatable target of cathode assembly.
Magnet assembly, which can be disposed such that, to be sputtered by the target material of cathode assembly sputtering towards substrate.Magnet assembly can produce
Magnetic field.Magnetic field may cause to one or more heating regions and be formed about during sputter deposition craft in magnetic field.Magnet
Position of the component in rotatable target influences the side that target material is sputtered away from cathode assembly during sputter deposition craft
To.
Sputtering deposition device according to embodiment as described herein includes multiple anode components, for example, anode stub.Anode
Element is configurable for influencing, particularly film rings the plasma generated in depositing operation.For example, plasma can be with
Including electrically charged particle, such as electronics.Anode component can be configured as the electrically charged particle for attracting plasma,
Such as electronics.Therefore, the return path (for example, the generator for returning to equipment) of electrically charged particle can be by multiple anode components
It provides.
The method that embodiment as described herein is related to sputtering deposition device and executes sputter deposition craft, wherein with deposition
The associated boundary effect of outermost cathode assembly of array can be by the one or more for the end for being arranged in depositing array
Auxiliary magnet component compensates.
Fig. 1 shows sputtering deposition device 100 according to one embodiment.Sputtering deposition device 100 includes being formed to sink
Multiple cathode assemblies 110 of product array.Multiple cathode assemblies 110 are configurable for towards substrate 180 (for example, large area base
Plate) sputtered target material.
In the example embodiment shown in fig. 1, multiple cathode assemblies 110 are made of two cathode assemblies, i.e. left side
Cathode assembly 112 and right side cathode assembly 114.According to the embodiment party that can be combined with other embodiment as described herein
Formula, multiple cathode assemblies 110 may include even number cathode assembly or are made of even number cathode assembly, all two, four, six
A, ten, 12 or even more cathode assemblies.
Cathode assembly 112 includes rotatable target 122 (i.e. tubular target or rotary target material), rotation axis 142 and cloth
Set the magnet assembly 132 in rotatable target 122.Similarly, cathode assembly 114 includes rotatable target 124, rotation
Axis 144 and the magnet assembly 134 being arranged in rotatable target 124.Rotatable target 112 and 114 is configured as using
In respectively around their the rotary target material material of rotation axis 142 and 144.The target material of cathode assembly 112 and 114 is towards base
Plate 180 sputters, with coated substrate 180, such as in static sputter deposition craft.According to can be with embodiment group as described herein
The embodiment of conjunction, rotatable target may include the target material arranged according to curved surface, can be cylindrical shape
It and/or may include penstock.
Sputtering deposition device 100 includes multiple anode components 160, for example, anode stub.Exemplary implementation shown in Fig. 1
In mode, multiple anode components 160 are made of three anode components 162,164 and 166.Anode component 162 is outermost anode member
Part, and anode component 164 is another outermost anode component in multiple anode components 160.According to can with it is as described herein
Other embodiment combination embodiment, multiple anode components 160 may include odd number cathode assembly or by odd number yin
Pole component composition, such as three, five, seven, 11,13 or even more anode components.It is included in multiple sun
The sum of anode component in pole element 160 can than include cathode assembly in multiple cathode assemblies 110 sum it is more by one
It is a.According to some embodiments that can be combined with other embodiment as described herein, and as shown in Figure 1, multiple cathode sets
Part 110 and multiple anode components 160 can be alternately arranged.
It is related to providing plasma 190 by the sputter deposition craft that sputtering deposition device 100 executes.Plasma 190
Shape, position, distribution and/or density can be included the magnetic field shadow that the magnet assembly in multiple cathode assemblies 110 generates
It rings.The magnetic field generated by magnet assembly, such as magnet assembly 132 or 134 shown in Fig. 1, may cause to have increased close
One or more heating regions of degree are formed near magnet assembly during sputter deposition craft.
Plasma 190 is also influenced by multiple anode components 160, this can provide return for the electronics in plasma
To the return path of the generator of sputtering deposition device 100.
Sputtering deposition device 100 shown in Fig. 1 further includes auxiliary magnet component 172 and provides in multiple cathode assemblies
110, another auxiliary magnet component 174 i.e. on the opposite end of depositing array.In the example embodiment shown in fig. 1,
Auxiliary magnet component 172 and another auxiliary magnet component 174 are separate magnets components.Particularly, these auxiliary magnet components
It is not included in cathode assembly.It is discussed below and is for example related to being arranged in replacing for the component of the auxiliary magnet in illusory cathode assembly
For embodiment.
Auxiliary magnet component, such as auxiliary magnet component 172 or another auxiliary magnet component 174 are configurable for mentioning
For magnetic field.It the magnetic field provided by auxiliary magnet component herein will sometimes referred to as " auxiliary magnetic field ".
According to the embodiment that can be combined with other embodiment as described herein, the magnetic field provided by auxiliary magnet component
It is configurable for compensating the boundary effect at the perimeter of plasma 190.
For example, for according to left and right directions according to linear deposit array (or slight curving but substantially linear depositing array)
Multiple cathodes arrangement 110 of arrangement, as described herein, the perimeter of plasma can refer to and multiple cathode assemblies 110
In the associated region of most right or most left cathode assembly.Fig. 1 is schematically shown close to cathode assembly 112 and close to outermost
The perimeter 192 in left side of anode component 162.Fig. 1 is also schematically shown close to cathode assembly 114 and close to another
Another perimeter 194 on right side of a outermost anode component 164.Perimeter 192 and another perimeter 194
It is shown for bigger depositing array, for example, in Fig. 4, for multiple cathode assemblies 160 including four cathode assemblies.
Equally, perimeter 192 is provided in the left side of depositing array, close to cathode assembly 112, i.e. multiple cathode assemblies 110 it is most left
Cathode assembly, and close to outermost anode component 162.Another perimeter 194 is provided on the right side of depositing array, close to yin
The most right cathode assembly of pole component 114, i.e. multiple cathode assemblies 110, and close to another outermost anode component 164.
According to the embodiment that can be combined with other embodiment as described herein, the perimeter of plasma 190, example
Such as, perimeter 192 or another perimeter 194 can be with the outermost cathode assembly of multiple cathode assemblies 110 (for example,
Cathode assembly 112 or cathode assembly 114) associated or heating region in its vicinity.From the perimeter of plasma
Distance to the outermost cathode assembly of multiple cathode assemblies 110 can be less than from the perimeter of plasma to multiple cathode sets
The distance of the inner cathode component of part 110.
Additionally or alternatively, the perimeter of plasma 190 can be the outermost anode with multiple anode components 160
Element (for example, outermost anode component 162 or outermost anode component 164) is associated or heating region in its vicinity.From
The distance of outermost anode component of the perimeter of plasma to multiple anode components 160 can be less than from the outer of plasma
Portion region to multiple anode components 160 internal anode element distance.
Additionally or alternatively, the perimeter of plasma 190 can be with auxiliary magnet component (for example, auxiliary magnet
Component 172 or another auxiliary magnet component 174) associated or heating region in its vicinity.
By being compensated according to the auxiliary magnet component of embodiment as described herein at the perimeter of plasma
Boundary effect.For the equipment according to embodiment as described herein, it is possible to reduce or even avoid this boundary effect.
The boundary effect avoided in order to better understand by embodiment as described herein is discussed below according to this paper institute
The embodiment stated does not include equipment for compensating the auxiliary magnet component of boundary effect.In such a device, Ke Yite
There are boundary effects.
Boundary effect as described herein relates to the fact that not include auxiliary according to embodiment as described herein
In the equipment of magnet assembly, plasma can have different property, for example, compared with the interior zone of plasma,
It is had different distributions in the perimeter of plasma, density or shape.
For example, the equipment includes cathode array and anode stub array in processing chamber housing 210 Fig. 2 shows equipment 200.
Cathode array includes most left cathode assembly 212, most right cathode assembly 214 and inner cathode component 216,217,218 and 219.Sun
Pole stick array includes most left anode stub 262, most right anode stub 264 and internal anode stick 266,267,268,269 and 270.Equipment
200 do not include the auxiliary magnet component according to embodiment as described herein.Show plasma 190.Plasma 190
Perimeter 292 and perimeter 294 are associated with most left cathode assembly 212 and most right cathode assembly 214 respectively.Plasma
190 interior zone 296,297,298 and 299 is associated with inner cathode component 216,217,218 and 219 respectively.As schemed
Show, the plasma density in interior zone 296,297,298 and 299 is substantially similar to each other or even basic last week
Phase property.Boundary effect occurs at perimeter 292 and 294.Particularly, the plasma density in these perimeters with
The significant ground of density in the interior zone of plasma is different.As shown, in most left cathode assembly 212 and most right cathode assembly
214 are formed about highdensity heating region (by dark space domain representation).Particularly, highdensity heating region is formed
Near most left anode stub 262 and most right anode stub 264, this is because plasma electron is by electric attraction to these outermost anodes
Stick.On the contrary, this high density plasma region is not formed near internal anode stub 266,267,268,269 and 270, this
It is because these internal anode sticks are undergone because of the magnetic field that the magnet assembly (not shown) in the cathode assembly of cathode array provides
Magnetic screen.
In other words, in the equipment 200 shown in Fig. 2 for not including auxiliary magnet component, for inner cathode component
With internal anode stick, plasma density be can be substantially periodically, but in 292 He of the perimeter of plasma
In 294, this periodicity is destroyed.
According to embodiment as described herein, one or more auxiliary magnet components are provided for compensating above-mentioned boundary effect
It answers.Referring again to FIGS. 1, auxiliary magnet component 172 can be provided.As shown, auxiliary magnet component 172 can be arranged in it is outermost
The left side of anode component 162, i.e., the left side of most left anode component.It as further shown, can be at the opposite end of depositing array
Another auxiliary magnet component 174 is provided.Another auxiliary magnet component 174 can be arranged in the right side of outermost anode component 164
Side, i.e., the right side of most right anode component.
Embodiment as described herein allows to reduce or even avoid the side at the perimeter 192 and 194 of plasma
Boundary's effect.The auxiliary magnetic field provided by auxiliary magnet component, the plasma item in external plasma region 192 and 194 are provided
Part and the condition of plasma of interior plasma body region are essentially identical.Particularly, by auxiliary magnet component, magnetic field condition and
The accessibility of plasma electron to outermost anode component 162 and 164 is substantially the same with internal anode element.For example,
Due to auxiliary magnetic field, the outermost anode component of internal anode element and multiple anode components can undergo magnetic screen, with such as Fig. 2
Shown in equipment 200 on the contrary, only having internal anode element to undergo such magnetic screen in the equipment 200, as described above.
By providing same or similar condition of plasma for all cathode assemblies in depositing array, it is heavy to increase
The service life of the outermost cathode assembly of product array and utilization rate, and therefore increase service life and the utilization rate of entire depositing array.It is special
It not, is not including in equipment according to the auxiliary magnet component of embodiment as described herein, due to the outside of plasma
Region and the different condition of plasma of interior zone, outermost cathode assembly can suffer from increased corrosion.Therefore, at this
In the equipment of sample, compared with inner cathode component, the service life of outermost cathode assembly is reduced.Due to cathode assembly array service life by
It is determined with most short-life target, it means that therefore the service life of entire depositing array is reduced.On the contrary, according to described herein
Embodiment equipment in, the boundary effect at external heating region is compensated, and plasma item
Part is identical for all cathode assemblies in depositing array.Therefore, the outermost cathode assembly of depositing array does not suffer from increasing
Therefore the corrosion added so as to increase service life and the utilization rate of outermost cathode assembly, and increases the service life of entire depositing array
And utilization rate.
In view of above-mentioned, a kind of sputtering deposition device for coated substrate is provided.Sputtering deposition device includes multiple yin
Pole component, the multiple cathode assembly are configured in sputtered target material in sputter deposition craft.Multiple cathode assemblies
Form depositing array.Each of multiple cathode assemblies include rotatable target and the magnet being arranged in rotatable target
Component.Multiple cathode assemblies include outermost cathode assembly, for example, cathode assembly 112.Sputtering deposition device further includes multiple anodes
Element, the multiple anode component is configurable for the plasma for influencing to generate in sputter deposition craft, plurality of
Anode component includes outermost anode component, for example, outermost anode component 162.Sputtering deposition device further includes auxiliary magnet component,
For example, auxiliary magnet component 172.Outermost cathode assembly, outermost anode component and auxiliary magnet component are arranged in this order.Auxiliary
Magnet assembly is configurable for providing magnetic field to compensate the boundary effect at the perimeter of plasma.
According to the embodiment that can be combined with other embodiment as described herein, auxiliary magnet component is not arranged in cathode
In component.For example, Fig. 1 is shown as the auxiliary magnet component for not including separate magnets component in any cathode assembly
172.Auxiliary magnet component 172, which can be configured as, to be contacted in sputter deposition craft with processing gas.
Embodiment as described herein be related to belonging to depositing array on the one hand and be therefore specifically configured as
Sputtered target material is in sputter deposition craft with the cathode assembly of coated substrate and the " void for being not belonging to depositing array on the other hand
If " difference between cathode assembly.
Multiple cathode assemblies 110 form depositing array.It should be appreciated that each cathode assembly in multiple cathode assemblies 110,
Each cathode assembly i.e. in depositing array is configured in sputter deposition craft sputtered target material to coat base
Plate.Particularly, as described herein, " the outermost cathode assembly " of multiple cathode assemblies and " another outermost cathode assembly " forms heavy
A part of product array and sputtered target material is configured in sputter deposition craft with coated substrate.
Particularly, according to embodiment, each cathode assembly in multiple cathode assemblies 110 is configurable for around it
Rotation axis rotates and by particle bombardment, allows target material from its rotatable target as sputter with coated substrate.It is this
Cathode assembly should be distinguished with " illusory " cathode assembly.A part of illusory cathode assembly formation sputtering deposition device, and
It, can be similar with the cathode assembly for belonging to depositing array or even identical in structure under some cases.However, illusory cathode sets
Part does not form a part of depositing array and/or can be arranged in the outside of depositing array.For example, illusory cathode assembly does not configure
It is sputtered target material with coated substrate.In this example, the target of illusory cathode assembly is not configured to for example in sputtering sedimentation work
It is rotated during skill.In another example, illusory cathode assembly can be disposed relative to be coated with along a first direction 10
At the offset position of substrate, so that different from the cathode assembly in depositing array, illusory cathode assembly indirectly faces substrate.
The other examples for configuring illusory cathode can be supplemented, if illusory cathode assembly be considered whether one of depositing array
The cathode assembly divided.
According to some embodiments that can be combined with other embodiment as described herein, auxiliary magnet component is arranged in void
If in cathode assembly.
Fig. 3 shows the equipment 110 according to embodiment as described herein, and wherein equipment 110 includes illusory cathode assembly
302.As shown, illusory cathode assembly 302 may include rotatable target 322 and magnet assembly.According to as described herein
The magnet assembly of embodiment, illusory cathode assembly 302 can be auxiliary magnet component 172.In the sputtering executed by the equipment
In depositing operation, target material can be by each cathode assembly in multiple cathode assemblies 110 but cannot be by illusory cathode assembly
302 transmittings are sputtered with coated substrate.Illusory cathode assembly 110 does not form a part of depositing array.Depositing array is in Fig. 3
It is schematically indicated by region 310.That is, depositing array is formed by those of being included in region 310 cathode assembly.Such as
Shown in figure, depositing array includes all cathode assemblies of multiple cathode assemblies 110, but does not include illusory cathode assembly 302.It is illusory
Cathode assembly 302 is for various purposes.The function of illusory cathode assembly in sputter deposition craft is associated with its magnet assembly,
The magnet assembly can be the auxiliary magnet component 172 according to embodiment as described herein.Although multiple yin can be passed through
Pole component 110 executes the sputtering of target material, but the auxiliary magnet component 172 in illusory cathode assembly 302 can be configured
For for generating auxiliary magnetic field, for compensating the boundary effect at the perimeter of plasma 190, as described herein.Cause
This, the auxiliary magnet component (for example, as shown in Figure 3) provided in illusory cathode assembly executes and independent auxiliary magnet component
(for example, as shown in Figure 1) identical function.
According to the embodiment that can be combined with other embodiment as described herein, sputtering deposition device may include substrate
Receiving area.Each cathode assembly in multiple cathode assemblies towards substrate receiving area or can be arranged in substrate receiving area
Before.Each cathode assembly in multiple cathode assemblies can be configured as to be provided in substrate receiving area for direction
Substrate sputtered target material.According to embodiment, illusory cathode assembly can be in a first direction relative to substrate receiving area
It is arranged at offset position.
According to embodiment, in the outermost cathode assembly 112 and another outermost cathode assembly of multiple cathode assemblies 110
Maximum distance between 114 along first direction can be the 50% to 150% of the ductility along first direction of substrate receiving area,
Especially 80% to 120%.
As shown in figs. 1 and 3, the outermost cathode assembly of multiple cathode assemblies 110 can with but need not be entire cathode chain most
The latter cathode.In Fig. 1, cathode assembly 112 is the outermost cathode assembly of multiple cathode assemblies 110, and is also that sputtering is heavy
The last one cathode of product equipment 100.As shown in figure 3, cathode assembly 112 be multiple cathode assemblies 110, i.e. depositing array most
Outer cathode component, but be not the last one cathode of equipment 100.Illusory cathode assembly 302 is the last of sputtering deposition device 100
One cathode, but illusory cathode assembly 302 is not configured for towards substrate sputtered target material, and is not therefore multiple
A part of cathode assembly 110 is not a part of depositing array.
In the present invention, term " outermost cathode assembly " is interpreted as the outermost cathode assembly of multiple cathode assemblies 110, i.e.,
It is configurable for the outermost cathode assembly towards the cathode assembly of substrate sputtered target material, the i.e. outermost cathode of depositing array
Component is such as shown as the cathode assembly 112 or 114 of the outermost cathode assembly of multiple cathode assemblies 110 in figure.
According to the embodiment that can be combined with other embodiment as described herein, outermost cathode assembly, outermost anode member
Part and auxiliary magnet component are arranged in this order.
According to the embodiment that can be combined with other embodiment as described herein, outermost cathode assembly, outermost anode member
Part and auxiliary magnet component can be arranged along first direction (for example, first direction 10 shown in Fig. 1) with this sequence.For example,
In Fig. 1, cathode assembly 112, outermost anode component 162 and auxiliary magnet component 172 are arranged along first direction 10 with this sequence.
It is proposed that these component " along first direction with this sequence " arrangements are not meant to that these components must be strictly arranged in across this
On each of a little components and the axis extended in a first direction.For example, according to one embodiment, one in these components
It may be at the offset position relative to the axis for passing through two remaining parts, as long as outermost cathode assembly, outermost anode component
It is to arrange in this order with auxiliary magnet component.Specifically, propose that " being arranged along first direction with this sequence " can be and instigate
The rectangular projection of the center of outermost anode component in a first direction is located at the center of auxiliary magnet component in a first direction
Arrangement between the rectangular projection of the center of rectangular projection and outermost cathode assembly in a first direction.
As described herein, first direction can refer to first direction 10 shown in such as Fig. 1.Multiple cathode assemblies 110
And/or multiple anode components 160 can be arranged along first direction 10.
According to the embodiment that can be combined with other embodiment as described herein, the rotation axis of outermost cathode assembly,
Any in the rotation axis of another outermost cathode assembly, the rotation axis of illusory cathode assembly and/or multiple cathode assemblies 110
The rotation axis of a cathode assembly can perpendicular to or be substantially perpendicular to the side of first direction 10 and upwardly extend.Outermost anode
Any one anode component in element, another outermost anode component or multiple anode components can perpendicular to or substantially hang down
Directly upwardly extended in the side of first direction 10.
Cathode assembly according to the embodiment that can be combined with other embodiment as described herein, in multiple cathode assemblies
Rotation axis can be parallel to each other or substantially parallel.Each of multiple anode components can be parallel to each other or substantially flat
Row.
As described herein, substantially vertical direction can refer into 75 degree to 105 degree, particularly 80 degree to 100 degree
The direction of angle.Essentially parallel directions can refer into -15 and spend to 15 degree, particularly -10 side spent to 10 degree of angle
To.
Sputtering deposition device may include the substrate support for being used to support substrate.Substrate support can be along first direction
Extend.Each cathode assembly in multiple cathode assemblies 110 can be arranged on the same side of substrate support.Multiple cathode sets
Each cathode assembly in part 110 can be configured as the phase that the substrate by substrate support support is coated for sputter material
Same surface.
According to the embodiment that can be combined with other embodiment as described herein, outermost cathode assembly and/or outermost sun
Pole element is relative to first direction " outermost ".Specifically, when each cathode assembly for considering multiple cathode assemblies is in first party
When upward rectangular projection, the rectangular projection of outermost cathode assembly can be the outermost rectangular projection of this rectangular projection.
Fig. 4 shows the multiple cathode elements 110 to form depositing array.Multiple cathode elements 110 are by yin shown in Fig. 4
Pole element 112,416,418 and 114 forms.Cathode assembly 112 is outermost cathode assembly, and cathode assembly 114 is deposition battle array
Another outermost cathode assembly of column.Cathode assembly 416 and 418 is the inner cathode component of depositing array.Cathode assembly 416 wraps
Include rotatable target and magnet assembly 436.Cathode assembly 418 includes rotatable target and magnet assembly 438.Institute in Fig. 4
The multiple anode components shown are made of anode component 162,464,466,468 and 164.Anode component 162 is outermost anode component,
And anode component 164 is another outermost anode component.Outermost cathode assembly 112, outermost anode component 162 and auxiliary magnet
Component 172 is arranged along first direction 10 with this sequence.Another outermost cathode assembly 114, another outermost 164 and of anode component
Another auxiliary magnet component 174 is arranged along first direction 10 with this sequence.Auxiliary magnet component 172 and 174 shown in Fig. 4
It is separate magnets component.
Alternatively, as shown in figure 5, according to embodiment as described herein, auxiliary magnet component 172 and 174 may include
In corresponding illusory cathode assembly 302 and 304.
Fig. 4 is shown from auxiliary magnet component 172 to the distance 482 of outermost anode component 162 and from outermost anode member
Part 162 arrives the distance 484 of the magnet assembly 132 of outermost cathode assembly 112.In the embodiment shown, distance 482 be equal to away from
From 484.In other words, from auxiliary magnet component 172 to the distance 482 of outermost anode component 162 and from outermost anode component 162
Distance 484 to the magnet assembly 132 of outermost cathode assembly 112 is from auxiliary magnet component 172 to outermost cathode assembly 112
About the 50% of the distance of magnet assembly 132.
According to the embodiment that can be combined with other embodiment as described herein, from auxiliary magnet component to outermost anode
The distance 482 of element and/or distance 484 from outermost anode component to the magnet assembly of outermost cathode assembly can be from auxiliary
Magnet assembly to outermost cathode assembly magnet assembly distance 30% to 70%.Particularly, this distance can be from auxiliary
Help magnet assembly to the 40% to 60% of the distance of the magnet assembly of outermost cathode assembly, for example, about 50%.
If distance 482 and 484 is within the above range, the effect of the auxiliary magnet component of boundary effect is compensated even
It further enhances, this is because this distance 482 and 484 being essentially equal provides spatial symmetry and periodicity.
According to the embodiment that can be combined with other embodiment as described herein, from auxiliary magnet component to outermost anode
The distance of element and/or can be in auxiliary magnet component to the distance of the magnet assembly of outermost cathode assembly from outermost anode component
In the range of the 30% to 70% of the distance between outermost cathode assembly.
According to the embodiment that can be combined with other embodiment as described herein, from auxiliary magnet component 172 to outermost
The distance of the magnet assembly 132 of cathode assembly 112 can be the magnet assembly 132 and neighbouring most vulva of outermost cathode assembly 112
The 80% to 120% of the distance between the magnet assembly of cathode assembly of pole component, especially 90% to 110%, such as about
100%.Within this range, the distance especially between subsequent magnet assembly is basic for distance between corresponding magnet assembly
It is upper it is equal in the case where, the effect of auxiliary magnet component compensation boundary effect even further enhances, this is because this basic
Upper equal distance also has further spatial symmetry and periodicity.
According to the embodiment that can be combined with other embodiment as described herein, auxiliary magnet component can be relative to multiple
Cathode assembly 110 and/or mobile relative to multiple anode components 160.Auxiliary magnet component can relative to outermost cathode assembly and/
Or it is mobile relative to outermost anode component.Auxiliary magnet component can move in a first direction.Auxiliary magnet component can be
Movably, for adjusting from auxiliary magnet component to the distance of outermost anode component and/or for adjusting from auxiliary magnet
Distance of the component to outermost cathode assembly.By this adjustable distance, providing a kind of allows to select auxiliary magnet component
Optimum position to compensate the flexible system of boundary effect as described herein.
According to the embodiment that can be combined with other embodiment as described herein, multiple cathode elements and multiple anodes member
Part is alternately arranged.For example, Fig. 4 show cathode assembly 112,416,418 and 114 be respectively relative to anode component 162,464,
466,468 and 164 alternative arrangement.Alternative arrangement may include wherein in each region between two neighbouring cathode components
The arrangement of Sole anode element is provided.
According to the embodiment that can be combined with other embodiment as described herein, multiple cathode assemblies 110 include second
Cathode assembly, for example, cathode assembly 416 shown in cathode assembly 114 or Fig. 4 shown in Fig. 1.Second cathode assembly and most
Outer cathode component can be the neighbouring cathode component of multiple cathodes.
According to the embodiment that can be combined with other embodiments as described herein, multiple anode components 160 include second
Anode component, for example, anode component 464 shown in anode component 166 or Fig. 4 shown in Fig. 1.Second plate element and most
Outer anodes element can be the adjacent anode element in multiple anode components.
If not providing another cathode assembly between two cathode assemblies, it is considered that two cathode assemblies
" adjacent ".Similarly, if not providing another cathode assembly between two anode components, it is considered that two sun
Pole element is " adjacent ".It is not cathode that adjacent this definition, which is not precluded and can provide between two neighbouring cathode components,
Another component of component.For example, as shown, anode component can be provided between two neighbouring cathode components.Similarly,
Can be provided not between two adjacent anode elements be anode component component, for example, between two adjacent anode elements
Cathode assembly is provided.
According to the embodiment that can be combined with other embodiment as described herein, the second cathode assembly, second plate group
Part, outermost cathode assembly, outermost anode component and auxiliary magnet component can be arranged in this order, especially along first side
To.
According to the embodiment that can be combined with other embodiment as described herein, the magnet orientation of auxiliary magnet component can
It is parallel to or is arranged essentially parallel to the magnet orientation of the magnet assembly of outermost cathode assembly.The magnet orientation of magnet assembly can be right
It should be in the outwardly extending direction of main body of one or more magnetic poles from magnet assembly.
The magnet orientation of each magnet assembly of multiple cathode assemblies can be parallel or substantially parallel to each other.It is substantially parallel
Magnet orientation may include angle be up to 15%, particularly 10% magnet orientation.
The symmetry further increased is provided with substantially parallel magnet orientation, for example, the period of cathode arrangement
Property.By the way that the magnet orientation of auxiliary magnet component is aligned with the magnet of the magnet assembly in outermost cathode assembly orientation, magnetic field
Symmetry and periodically can extend to the end of system, to further decrease boundary effect.
Magnet assembly in each cathode assembly of multiple cathode assemblies 110 can have it is same or similar design and
Same or similar magnetic property.
According to the embodiment that can be combined with other embodiment as described herein, multiple cathode assemblies 110 and/or multiple
Anode component 160 is arranged according to one-dimensional arrangement.One-dimensional arrangement may include arrangement, the basis according to straight line as shown in Figure 4
The arrangement of arc 610 as shown in FIG. 6, or include being arranged in offset position according to the cathode assembly of straight line arrangement and relative to line
Outermost cathode assembly according to arrangement as shown in Figure 7.
According to the embodiment that can be combined with other embodiment as described herein, sputtering deposition device includes that another is auxiliary
Help magnet assembly.Multiple cathode assemblies may include another outermost cathode assembly.Multiple anode components may include another
Outermost anode component.For example, Fig. 1 and 4 shows another auxiliary magnet component 174, as another outermost cathode assembly
Cathode assembly 114, the anode component 164 as another outermost anode component.
Another outermost cathode assembly, another outermost anode component and another auxiliary magnet component can be in this order
Arrangement is especially arranged along first direction.Another auxiliary magnet component be configurable for provide magnetic field with compensate wait from
Boundary effect at another perimeter (for example, another perimeter 194) of daughter.
According to the embodiment that can be combined with other embodiment as described herein, auxiliary magnet component 172 and another
Auxiliary magnet component 174 is arranged on the opposite end of multiple cathode assemblies 110.
About auxiliary magnet component 172, outermost cathode assembly 112, outermost anode assemblies 162 and plasma perimeter
192 property, feature and the examples discussed are applied to another auxiliary magnet component 174, another most vulva in the corresponding way
Another perimeter 194 of pole component 114, another outermost anode assemblies 164 and plasma.For example, it is similar to
Auxiliary magnet component 172, it does not include the separate magnets group in any cathode assembly that another auxiliary magnet component 174, which can be,
Part, or can be alternatively included in another illusory cathode assembly (for example, cathode assembly 304).
According to the embodiment that can be combined with other embodiment as described herein, sputtering deposition device includes vacuum chamber
Room, for example, vacuum chamber 350 shown in Fig. 3.Multiple cathode assemblies 110, multiple anode components 160, auxiliary magnet component
172 and/or another auxiliary magnet component 174 can be arranged in vacuum chamber 350.
Fig. 8 a-b respectively illustrates the top view and cross-sectional side of the magnet assembly 800 according to embodiment as described herein
View.Magnet assembly 800 can be included in the magnet assembly in the cathode assembly of multiple cathode assemblies 110, i.e., in deposition battle array
Magnet assembly used in column.Alternatively, magnet assembly 800 can be auxiliary magnet component.For example, magnet assembly 800 can be
What it is according to embodiment as described herein includes the auxiliary magnet component in illusory cathode assembly.
Magnet assembly 800 has interior pole 820 and outer pole 810.Magnet assembly 800 can be or including magnetic yoke.Such as Fig. 8 b institute
The cross-sectional side view of the magnet assembly 800 shown has the shape of fork, wherein the tip pitched represents interior pole and outer pole.Interior pole and outer
It can be extremely arranged in inner surface towards the inner surface of rotatable target, magnet assembly 800.Interior pole 820 and/or outer pole 810
It can be formed by multiple permanent magnets.
Fig. 8 c shows the side view of magnet assembly 870.Magnet assembly 870 can correspond to one of magnet assembly 800
Point, such as outer pole 810 or the part of it of magnet assembly 800.According to embodiment as described herein, magnet assembly 870 can be with
It is auxiliary magnet component 870.For example, magnet assembly 870 can be independent auxiliary magnet component.
According to the embodiment that can be combined with other embodiment as described herein, magnet assembly, for example including multiple
The magnet assembly in one in cathode assembly 110, may include magnetic pole.Magnet assembly may include internal magnetic pole and/or at least
One outer magnetic pole.
According to the embodiment that can be combined with other embodiment as described herein, auxiliary magnet component include permanent magnet or
Multiple permanent magnets.Auxiliary magnet component can be identical as the type of the magnet assembly in the cathode assembly for depositing array.With
The magnet assembly of cathode assembly for depositing array is compared, and the design of auxiliary magnet component may be adapted to optimization by auxiliary magnet
The effect that component provides, that is, the boundary effect for compensating, being reduced or avoided at the perimeter of plasma.
According to another embodiment, a kind of method for executing sputter deposition craft is provided.Sputter deposition craft can be with
It is magnetron sputtering technique.
According to the embodiment that can be combined with other embodiment as described herein, depositing operation is static sedimentation technique.
Difference between electrostatic precipitation and Dynamic deposition is as follows, and is specifically adapted for large-area substrates processing, such as vertically
The processing of the large-area substrates of orientation.Dynamic sputter be wherein substrate in continuously about or quasi-continuouslyly mobile straight of sedimentary origin
Column technique.Dynamic sputter this have the advantage that sputtering technology can be stablized before substrate is moved in deposition region, and
Then it is kept constant when substrate passes through sedimentary origin.However, Dynamic deposition can have disadvantage, for example, about particle generation side
Face.This may be specifically adapted for TFT backplate deposition.It should be noted that heavy with the different term static state of Dynamic deposition technique
Product technique is not excluded for each movement of substrate, such as technical staff it will be appreciated that.Electrostatic precipitation technique may include for example in the deposition phase
Between static substrate position, the oscillating substrate position during deposition, the substantially invariable average substrate position during deposition,
In the shake substrate position during deposition, the combination for swinging substrate position or the above item during deposition.Therefore, static sedimentation
Technique is construed as the depositing operation with static position, the depositing operation with basic static position, or has substrate
Partly static position depositing operation.Therefore, static sedimentation technique as described herein can be clearly heavy with dynamic
Product technique distinguishes, without making substrate or yin of the substrate position for static sedimentation technique absolutely not during deposition
Any movement of pole component.
This method includes providing plasma.This method further comprises with multiple cathode assembly sputtered target materials.It should
Method further comprises influencing plasma with the multiple magnet assemblies being arranged in multiple cathode assemblies.This method is further wrapped
Including influences plasma with multiple anode components.This method further comprises that auxiliary magnetic is provided at the perimeter of plasma
Field is to compensate boundary effect.
The embodiment of this method can be by executing according to the sputtering deposition device of embodiment as described herein.Especially
Ground, auxiliary magnetic field can be by providing according to the auxiliary magnet component of embodiment as described herein.
According to the embodiment that can be combined with other embodiment as described herein, the method may include provide technique
Gas.Process gas can be provided in vacuum chamber.Auxiliary magnet component can be contacted with process gas.For example, institute in Fig. 1
The auxiliary magnet component 172 shown can contact in sputter deposition craft with processing gas.
According to the embodiment that can be combined with other embodiment as described herein, auxiliary magnetic field is by illusory cathode assembly
Auxiliary magnet component provides.According to the embodiment that can be combined with other embodiment as described herein, by auxiliary magnet group
When part provides auxiliary magnetic field, the target material for coated substrate is not all sputtered by illusory cathode assembly.
According to the embodiment that can be combined with other embodiment as described herein, target material towards substrate (especially
Large-area substrates) or sputtered on substrate.
According to another embodiment, a kind of method for executing sputter deposition craft is provided.This method comprises: provide etc.
Gas ions；With the multiple cathode assembly sputtered target materials for forming depositing array；Magnetic field is provided to influence the outside of plasma
Region, wherein the magnetic field is provided by the auxiliary magnet component outside depositing array.The embodiment of this method can be by root
It is executed according to the sputtering deposition device of embodiment as described herein.
According to the embodiment that can be combined with other embodiment as described herein, auxiliary magnet component is arranged in illusory yin
In the component of pole.
Cathode assembly according to the embodiment that can be combined with other embodiment as described herein, outside depositing array
It is the illusory cathode assembly according to embodiment as described herein.
According to the embodiment that can be combined with other embodiment as described herein, this method may include more with being arranged in
Multiple magnet assemblies in a cathode assembly influence plasma.
According to the embodiment that can be combined with other embodiment as described herein, this method may include with multiple anodes
Elements affect plasma.
According to the embodiment that can be combined with other embodiment as described herein, substrate is large-area substrates.
Term " substrate " as used herein covers non-flexible substrate (for example, glass substrate, chip, transparent crystal are (such as
Sapphire etc.) slice or glass plate) and flexible base board (such as coiled material or foil).According to can be with other embodiment party as described herein
Some embodiments of formula combination, embodiment as described herein are displayed for device PVD, that is, are being used for monitor market
Large-area substrates on sputtering sedimentation.According to some embodiments, (wherein carrier can be taken for large-area substrates or respective carrier
One substrate of band or multiple substrates) it can have at least 0.67m2Size.Size can be about 0.67m2(0.73m×0.92m-
4.5th generation) to about 8m2, more typically about 2m2To about 9m2Or even as high as 12m2.It provides according to embodiment as described herein
Structure, equipment (such as cathode assembly) and method substrate or carrier can be large-area substrates as described herein.For example, big
Area glass substrate or carrier can be for the 4.5th generation, and (it corresponds to about 0.67m2Substrate (0.73m × 0.92m)), the 5th generation (its correspond to
In about 1.42Substrate (1.1m × 1.3m)), the 7.5th generation (its correspond to about 4.29m2Substrate (1.95m × 2.2m)), the 8.5th generation
(it corresponds to about 5.7m2Substrate (2.2m × 2.5m)) or even the 10th generation (its correspond to about 8.7m2Substrate (2.85m ×
3.05m)).Even higher generation (such as the 11st generation and the 12nd generation) and corresponding substrate area can be similarly implemented.
According to some embodiments that can be combined with other embodiment as described herein, target material, which can be selected from, includes
Following item or the group being made of following item: aluminium, silicon, tantalum, molybdenum, niobium, titanium, copper and the above item oxide, nitride, oxynitriding
Object and alloy.Particularly, target material may include following item or the group that is made of following item: aluminium, copper and silicon.Reactive sputtering work
Skill can provide the deposition oxide of these target materials.Sputter material further includes ITO (indium tin oxide), IZO (indium zinc oxidation
Object), IGZO (indium gallium zinc oxide), the AZO zinc oxide of doping (aluminium).These materials can sputter in such a way that part is reacted.
It can also be with cvd nitride object or oxynitride.Can be used in combination with embodiment as described herein for sputtered target material
Process gas may include inert gas (such as argon) and/or reaction gas (such as oxygen, nitrogen, hydrogen and ammonia (NH3), ozone (O3)、
Activated gas etc..
Claims (16)
1. a kind of sputtering deposition device (100), comprising:
Multiple cathode assemblies (110), the multiple cathode assembly are configured in sputtering target material material in sputter deposition craft
Material, wherein each of the multiple cathode assembly includes rotatable target and the magnetic being arranged in the rotatable target
Body component, wherein the multiple cathode assembly includes outermost cathode assembly (112)；
Multiple anode components (160), the multiple anode component are configurable for influencing to produce in the sputter deposition craft
Raw plasma (190), wherein the multiple anode component includes outermost anode component (162)；And
Auxiliary magnet component (172),
Wherein the outermost cathode assembly, the outermost anode component and the auxiliary magnet component are arranged in this order, wherein
The auxiliary magnet component is configurable for providing magnetic field to compensate the side at the perimeter (192) of the plasma
Boundary's effect.
2. sputtering deposition device as described in claim 1, wherein the auxiliary magnet component is not disposed in cathode assembly.
3. sputtering deposition device as described in claim 1, wherein the auxiliary magnet component is arranged in illusory cathode assembly
(302) in.
4. sputtering deposition device as claimed any one in claims 1 to 3, wherein the auxiliary magnet component can be relative to institute
It states multiple cathode assemblies and/or can be moved relative to the multiple anode component.
5. sputtering deposition device as claimed any one in claims 1 to 3, wherein from the auxiliary magnet component to it is described most
The distance (482) of outer anode element and/or from the outermost anode component to the magnet assembly of the outermost cathode assembly
Distance (484) can be from the auxiliary magnet component to the distance of the magnet assembly of the outermost cathode assembly
30% to 70%.
6. the sputtering deposition device as described in any one of claims 1 to 5, wherein the multiple cathode element and the multiple
Anode component is alternately arranged.
7. such as sputtering deposition device described in any one of claims 1 to 6, wherein the multiple cathode assembly includes the second yin
Pole component (114,416), and the multiple anode component includes second plate element (166,464),
Wherein second cathode assembly and the outermost cathode assembly are the neighbouring cathode components in the multiple cathode assembly,
And the second plate element and the outermost anode component are the adjacent anode elements in the multiple anode component,
Wherein second cathode assembly, the second plate component, the outermost cathode assembly, the outermost anode component and
The auxiliary magnet component is arranged in this order.
8. the sputtering deposition device as described in any one of claims 1 to 7, wherein the multiple anode component includes multiple sun
Pole stick.
9. such as sputtering deposition device described in any item of the claim 1 to 8, wherein the magnet of the auxiliary magnet component is orientated
It is arranged essentially parallel to the magnet orientation of the magnet assembly of the outermost cathode assembly.
10. sputtering deposition device as claimed in any one of claims 1-9 wherein, further comprises:
Another auxiliary magnet component (174),
Wherein the multiple cathode assembly includes another outermost cathode assembly (114), and the multiple anode component includes another
A outermost anode component (164),
Wherein another described outermost cathode assembly, another described outermost anode component and another described auxiliary magnet component
It arranges in this order, wherein another described auxiliary magnet component is configurable for providing magnetic field to compensate in the plasma
Boundary effect at another perimeter (194) of body.
11. sputtering deposition device as described in any one of the preceding claims, wherein the auxiliary magnet component and described another
One auxiliary magnet component is arranged on the opposite end of the multiple cathode assembly.
12. a kind of method for executing sputter deposition craft, comprising:
It provides plasma (190)；
With multiple cathode assemblies (110) sputtered target material；
The plasma is influenced with the multiple magnet assemblies being arranged in the multiple cathode assembly；
The plasma is influenced with multiple anode components (160)；And
Auxiliary magnetic field is provided at the perimeter (192) of the plasma to compensate boundary effect.
13. method as claimed in claim 12, further comprises:
Process gas is provided,
Wherein the auxiliary magnetic field is provided by auxiliary magnet component (172), wherein the auxiliary magnet component and the process gas
Body contact.
14. method as claimed in claim 12, wherein the magnetic field is mentioned by the auxiliary magnet component of illusory cathode assembly (302)
For.
15. a kind of method for executing sputter deposition craft, comprising:
It provides plasma (190)；
With multiple cathode assemblies (110) sputtered target material for forming depositing array (310)；And
Magnetic field is provided with the perimeter (192) of gas ions described in influencing etc., wherein the magnetic field is by outside the depositing array
The auxiliary magnet component (172) in portion provides.
16. method as claimed in claim 15, wherein the auxiliary magnet component is arranged in illusory cathode assembly.
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| Application Number | Priority Date | Filing Date | Title |
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| PCT/EP2017/050693 WO2018130301A1 (en) | 2017-01-13 | 2017-01-13 | Sputter deposition apparatus for coating a substrate and method of performing a sputter deposition process |
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| JP (1) | JP2020506287A (en) |
| KR (1) | KR102219774B1 (en) |
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| CN114774871A (en) * | 2022-04-20 | 2022-07-22 | 广州华星光电半导体显示技术有限公司 | Magnetron sputtering device and magnetron sputtering film forming method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015007263A (en) * | 2013-06-24 | 2015-01-15 | 株式会社日立ハイテクノロジーズ | Organic device manufacturing device and organic device manufacturing method |
| WO2015172835A1 (en) * | 2014-05-15 | 2015-11-19 | Applied Materials, Inc. | Apparatus and method for coating a substrate by rotary target assemblies in two coating regions |
| WO2016192814A1 (en) * | 2015-06-05 | 2016-12-08 | Applied Materials, Inc. | Sputter deposition source, sputtering apparatus and method of operating thereof |
-
2017
- 2017-01-13 CN CN201780082722.8A patent/CN110168697A/en active Pending
- 2017-01-13 KR KR1020197023254A patent/KR102219774B1/en active IP Right Grant
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015007263A (en) * | 2013-06-24 | 2015-01-15 | 株式会社日立ハイテクノロジーズ | Organic device manufacturing device and organic device manufacturing method |
| WO2015172835A1 (en) * | 2014-05-15 | 2015-11-19 | Applied Materials, Inc. | Apparatus and method for coating a substrate by rotary target assemblies in two coating regions |
| WO2016192814A1 (en) * | 2015-06-05 | 2016-12-08 | Applied Materials, Inc. | Sputter deposition source, sputtering apparatus and method of operating thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114774871A (en) * | 2022-04-20 | 2022-07-22 | 广州华星光电半导体显示技术有限公司 | Magnetron sputtering device and magnetron sputtering film forming method |
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| JP2020506287A (en) | 2020-02-27 |
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