CN116917532A

CN116917532A - Method for depositing material on substrate

Info

Publication number: CN116917532A
Application number: CN202180094561.0A
Authority: CN
Inventors: 托马斯·沃纳·兹巴于尔; 安科·赫尔密西; 马库斯·本德; 崔寿永; 莱内尔·欣特舒斯特; 克里斯托夫·蒙多夫
Original assignee: Applied Materials Inc
Current assignee: Applied Materials Inc
Priority date: 2021-03-18
Filing date: 2021-03-18
Publication date: 2023-10-20
Also published as: KR20230145481A; WO2022194377A1

Abstract

A method of depositing at least one material on a substrate is described. The method includes a first deposition including: sputtering from the first and second rotating targets is performed through a gap that is adjustable and has a size less than the first size. The first rotary target has a first magnet assembly that provides plasma confinement in a first direction facing the second rotary target. The second rotary target has a second magnet assembly that provides plasma confinement in a second direction facing the first rotary target. The first direction and the second direction deviate from being parallel to a substrate plane of the substrate by an angle smaller than a first value. The method includes a second deposition over the first deposition. The second depositing includes: sputtering from the first and second rotating targets through the gap, the gap having at least a second dimension, the second dimension being greater than the first dimension. The first magnet assembly provides plasma confinement in a third direction. The second magnet assembly provides plasma confinement in a fourth direction. At least one of the third direction or the fourth direction is offset from parallel to the substrate plane by an angle of at least a second value, the second value being greater than the first value.

Description

Method for depositing material on substrate

Technical Field

Embodiments of the present disclosure relate to depositing material on a substrate. Embodiments of the present disclosure are particularly directed to depositing material on a substrate by sputtering from a rotating target.

Background

Deposition of materials on substrates has many applications in various technical fields. Sputtering is a method for depositing material on a substrate. Sputtering may be associated with bombarding a substrate, particularly a film located on the substrate, with energetic particles. Bombardment can have an adverse effect on the properties of materials, particularly films, that are located on the substrate. To avoid bombardment, for example, a facing target sputtering (facing target sputtering; FTS) system is designed with a planar target. In FTS systems, multiple targets are not directly facing the substrate, but rather face each other. However, the stability of the sputtering plasma in conventional FTS systems is limited. The applicability of conventional FTS systems in mass production is impaired. Advanced FTS systems may include rotating targets to improve material utilization. Nevertheless, FTS systems are often associated with low deposition rates, resulting in low productivity and risk of substrate surface contamination.

In view of the above, it would be advantageous to provide improved methods and systems for depositing material on a substrate.

Disclosure of Invention

According to one embodiment, a method of depositing at least one material on a substrate is provided. The method includes a first deposition including: sputtering from the first and second rotating targets is performed through a gap that is adjustable and has a size less than the first size. The first rotary target has a first magnet assembly that provides plasma confinement in a first direction facing the second rotary target. The second rotary target has a second magnet assembly that provides plasma confinement in a second direction facing the first rotary target. The first direction and the second direction deviate from being parallel to a substrate plane of the substrate by an angle smaller than a first value. The method includes a second deposition over the first deposition. The second depositing includes: sputtering from the first and second rotating targets through the gap, the gap having at least a second dimension, the second dimension being greater than the first dimension. The first magnet assembly provides plasma confinement in a third direction. The second magnet assembly provides plasma confinement in a fourth direction. At least one of the third direction or the fourth direction is offset from parallel to the substrate plane by an angle of at least a second value, the second value being greater than the first value.

According to an embodiment, a controller is provided that is configured to be connectable to a system for depositing a material. The controller is configured to control the system such that the method according to embodiments described herein is performed.

According to one embodiment, a method of depositing at least one material on a substrate is provided. The method includes a first deposition. The first depositing includes: sputtering is performed from a first rotating target having a first magnet assembly providing plasma confinement in a first direction facing the second rotating target and a second rotating target having a second magnet assembly providing plasma confinement in a second direction facing the first rotating target through a first gap. The first direction and the second direction deviate from being parallel to a substrate plane of the substrate by an angle smaller than a first value. The method includes a second deposition over the first deposition. The second depositing includes: sputtering is performed from at least a third rotating target through a second gap, the second gap having a larger dimension than the first gap, the third rotating target having a third magnet assembly, the third magnet assembly providing plasma confinement in a third direction. The third direction is offset from parallel to the substrate plane by an angle of at least a second value, the second value being greater than the first value.

According to one embodiment, a system for depositing at least one material on a substrate is provided. The system comprises: a first target support for a first rotating target; a first magnet assembly connectable to the first target support; a second target support for a second rotary target; and a second magnet assembly connectable to the second target support. In the connected state, the first magnet assembly and the second magnet assembly face in a direction that deviates from parallel with a substrate plane of the substrate by an angle less than a first value. The system further comprises: a third target support for a third rotary target; a third magnet assembly connectable to the third target support, the third magnet assembly facing in a connected state at a direction that deviates from parallel with the substrate plane by at least a second value, the second value being greater than the first value. The system further comprises: a first gap disposed in or between the shields to allow sputtered material from the first and second rotary targets to reach the substrate; and a second gap disposed in or between the shields to allow sputtered material from at least the third rotary target to reach the substrate, the second gap having a larger size than the first gap.

The disclosure is to be understood as embracing apparatuses and systems for carrying out the disclosed methods, including apparatus parts for performing each of the described method aspects. The method aspects may be performed, for example, by hardware components, by a computer programmed by suitable software, or by any combination of the two. The present disclosure is also to be understood as embracing methods for operating the described apparatus and systems. Methods for operating the described devices and systems include method aspects for performing each function of the respective device or system.

Drawings

So that the manner in which the above recited features can be understood in detail, a more particular description of the subject matter, briefly summarized above, may be provided below by reference to embodiments. The drawings relate to embodiments and are described below:

FIGS. 1A-1B are schematic cross-sectional views of a system for depositing material according to embodiments described herein;

FIG. 2 is a chart illustrating a method of depositing material on a substrate according to embodiments described herein;

FIG. 3 is a chart illustrating a method of depositing material on a substrate according to embodiments described herein;

FIG. 4 is a schematic cross-sectional view of a system for depositing material according to embodiments described herein; and is also provided with

Fig. 5 is a schematic cross-sectional view of a system for depositing material according to embodiments described herein.

Detailed Description

Reference will now be made in detail to the various embodiments, one or more examples of which are illustrated in each figure. In the following description of the various figures, like reference numerals refer to like parts. Generally, only the differences with respect to the respective embodiments are described. Each example is provided by way of explanation and not intended to be limiting. Additionally, features illustrated or described as part of one embodiment can be used on or in conjunction with other embodiments to yield yet a further embodiment. The description is intended to include such modifications and variations.

Fig. 1A-1B are schematic cross-sectional views of systems for depositing at least one material according to embodiments described herein. The system may be particularly suitable for application in low-throughput applications (e.g., research and development environments). The system 100 is used to deposit at least one material on a substrate 102. The substrate 102 may be disposed on a substrate holder 104. The system 100 includes a first target support for a first rotary target 110 and a second target support for a second rotary target 120. The first and second rotary targets may each be mounted to a respective target support. In an embodiment, the system includes a first rotating target and a second rotating target.

The system 100 includes a first magnet assembly 112 connectable to a first target support. In particular, when the first magnet assembly 112 is connected and the first rotary target 110 is mounted to the first target support, the first magnet assembly 112 is positioned within the first rotary target 110. The system further includes a second magnet assembly 122 connectable to a second target support. In particular, when the second magnet assembly 122 is connected and the second rotary target 120 is mounted to the second target support, the second magnet assembly 122 is positioned within the second rotary target 120.

Generally, a target support for a rotating target can include or consist of at least one endblock. The endblock may include a target mounting flange configured to support a rotating target while allowing rotation relative to the endblock. The end block may include at least one utility shaft configured to support at least one magnet assembly. The endblock may include fittings for delivering cooling fluid to the rotating target.

A plasma associated with sputter deposition may be trapped between the first and second rotating targets. The plasma confinement of the first magnet assembly and the plasma confinement of the second magnet assembly may at least partially overlap. In particular, the first rotating target and the second rotating target are adjacent targets. More particularly, no additional target is positioned in the region between the first and second rotating targets.

In the context of the present disclosure, plasma confinement should be understood as a plasma confinement region in particular. A plasma confinement region can be understood as a region in which the amount of plasma increases relative to the environment, in particular due to the influence of the magnetic field of a magnet assembly located in a rotating target. In the context of the present disclosure, providing a plasma confinement in a particular direction is to be understood in particular as providing a plasma confinement such that a main direction of the plasma confinement extends in the particular direction.

In particular in embodiments where the magnet assembly comprises a permanent magnet, providing plasma confinement in a particular direction may be understood as providing the magnet assembly at a position such that the magnet assembly faces a particular direction. In particular, the symmetry axis of the magnet assembly faces in a particular direction. For example, providing plasma confinement in a direction facing a rotating target (e.g., an adjacent rotating target) may be understood as the magnet assembly facing the rotating target.

According to some embodiments of the present disclosure, plasma confinement is provided in a plasma racetrack (racetrack), in particular a closed plasma racetrack. Plasma confinement associated with one magnet assembly provides a closed loop. The closed loop may for example be provided at one target, i.e. the target in which the magnet assembly is provided.

Generally, a magnet assembly positioned within a rotating target can enable magnetron sputtering. As used herein, "magnetron sputtering" refers to sputtering performed using a magnetron, i.e., a rotating target within which a magnet assembly is positioned. A magnet assembly is to be understood in particular as a unit capable of generating a magnetic field. The magnet assembly may include one or more permanent magnets. The permanent magnets may be arranged within the rotating target such that free electrons are trapped within the generated magnetic field, for example in a closed loop or racetrack. The magnet assembly may be disposed within a backing tube of the rotary target or within a target tube. The rotary targets described herein may be cathodes or portions of cathodes. The system may be configured for DC sputtering. In an embodiment, the system may be configured for pulsed DC sputtering.

A rotating target is to be understood as in particular a rotatable sputter target, such as a cylindrical sputter target. In particular, the rotating target may be a rotatable cathode comprising the material to be deposited. The rotating target may be connected to a shaft configured to rotate in at least one operating state of the system. The rotary target may be directly or indirectly connected to the shaft via a connecting element. According to some embodiments, the rotating target in the deposition chamber may be replaceable. The rotating target may be replaced after the material to be sputtered has been consumed.

In a rotating target, material is removed from the target during magnetron sputtering with improved uniformity compared to magnetron sputtering for a planar target. Uniformity in the case of a rotating target is caused in particular by the target surface moving relative to the magnetic field due to the rotation of the target. The amount of material collected on the target surface can be reduced or even eliminated. Arcing may be reduced or even eliminated. Material flaking may be reduced or eliminated. The stability, in particular the long-term stability, of the deposition process can be improved. The facing target sputtering concept can be implemented for mass production. The collection efficiency can be improved, in particular, by the effect that an increased amount of material deposited on the target is sputtered again. The collection efficiency is to be understood in particular as the amount of sputtered material captured by the substrate relative to the total amount of material emitted by the sputtering target. The material utilization rate can be improved. Material waste and cost can be reduced.

In an embodiment, the first magnet assembly 112 includes at least three poles facing the plasma confinement 114 provided by the first magnet assembly. The second magnet assembly 122 may include at least three poles facing the plasma confinement 114 provided by the second magnet assembly 122. In the embodiment shown in fig. 1A-1B, the first magnet assembly 112 and the second magnet assembly 116 each include three poles facing the plasma confinement provided by the respective magnet assemblies.

The rotating targets 110, 120 may be positioned in the deposition chamber 150. In particular, the deposition chamber 150 is a vacuum chamber. The first additional chamber and the second additional chamber may be disposed adjacent to a deposition chamber (not shown). According to some embodiments, which may be combined with other embodiments described herein, a dynamic deposition process may be used to provide deposition of material on a substrate. For example, the substrate may be moved past the first and second rotating targets while depositing material. The deposition chamber or zone of the vacuum processing system may be separated from another chamber or other zone by a valve.

According to some embodiments, the process gas may include at least one of a noble gas or a reactive gas. For example, the rare gas may be argon, krypton, xenon, or a combination thereof. For example, the reactant gas may be oxygen, nitrogen, hydrogen, ammonia (NH 3), ozone (O3), an activating gas, or a combination thereof.

The term "substrate" as used herein shall include both non-flexible substrates and flexible substrates. Examples of non-flexible substrates include glass substrates, glass plates, wafers, or transparent crystal slices (such as sapphire, etc.). Examples of flexible substrates include webs or foils. According to yet further embodiments, which may be combined with other embodiments described herein, the transport of the substrate and/or the substrate carrier may be provided by a magnetic levitation system, respectively. The carrier may be suspended or held by magnetic force without mechanical contact or with reduced mechanical contact and may be moved by magnetic force.

Each of the rotary targets may be a cathode. The rotating cathode may be electrically connected to a DC power source. For example, a component such as a housing of the deposition chamber or at least one shield within the deposition chamber may be disposed on the mass potential. The component may be used as an anode. Optionally, the system may further comprise an anode. In embodiments that may be combined with other embodiments described herein, at least one or more of the rotating targets may be electrically connected to a respective separate power source. In particular, each of the rotary targets may be connected to a respective separate power source. For example, a first rotating target may be connected to a first DC power source and a second rotating target may be connected to a second DC power source.

Particularly in embodiments in which non-reactive sputtering is performed, the material to be deposited on the substrate may be sputtered from either the first or second rotating targets. This is to be understood in particular such that particles ejected from the surface of the first rotating target or the second rotating target form a deposited material. Particularly in embodiments in which reactive sputtering is performed, particles of the first material may be ejected from the surface of either the first or second rotating targets. Particles of the first material may combine with the second material to form a material to be deposited on the substrate. The first material may be understood as a component of the deposited material. The gas surrounding the first and second rotating targets may comprise a second material.

In embodiments that may be combined with other embodiments described herein, the plasma associated with sputtering and the substrate move relative to each other during deposition of the material on the substrate. For example, the substrate may oscillate during deposition, particularly back and forth between two positions.

The system further comprises an adjustable slit 115 provided in the shielding or between at least two shielding, in particular as a gap between at least two shielding. A shield disposed in the deposition chamber 150 may protect a rear portion of the deposition chamber. A gap 115 may be provided between the first shield 106 and the second shield 116, as shown in the depicted embodiment. In particular, assuming that the first rotary target 110 is mounted to the first target support, the first shield 106 is disposed between the first rotary target 110 and the deposition region. The deposition area is to be understood in particular as the area in which the substrate 102 will be located during deposition. Similarly, a second shield 116 may be disposed between the second rotary target 120 and the deposition region.

In the context of the present disclosure, the gap size will be understood in particular as the size of the gap between the shields, more in particular as the distance between the shields. The size of the gap 115 may be adjusted by varying the distance between the shields. At least one of the first shield 106 or the second shield 116 may be movable, particularly in a direction parallel to the substrate plane of the substrate 102. In particular, the size of the gap 115 may be adjusted by moving at least one of the shields.

In an embodiment, the first shield 106 includes a first shield magnet assembly 108. The second shield 116 may include a second shield magnet assembly 118. The second shield magnet assembly 118 may face the first shield magnet assembly 116. Each of the poles of the first shield magnet assembly facing the second shield magnet assembly may have a polarity opposite to the corresponding nearest pole of the second shield magnet assembly. The magnetic field in the gap 115 between the first shield 106 and the second shield 116 may be the field of a magnetic lens. In a magnetic field, the charged particles are deflectable. The normal component of the momentum of the charged particles relative to the substrate surface may be reduced. The normal component of momentum is responsible for possible damage to the substrate or layers positioned on the substrate by the charged particles, in particular the possible damage depth. The shield including the shield magnet assembly may mitigate damage to the substrate, particularly to sensitive coatings disposed on the substrate.

The system also includes a controller configured to control the system such that the method of depositing at least one material on a substrate as described herein is performed. The method may be particularly suitable for batch-type dynamic deposition systems.

In an embodiment, the at least one material includes either a metal, a metal oxide (MOx), or a Transparent Conductive Oxide (TCO). The metal may be, for example, ag, mgAg, al, yb, ca or Li. The metal oxide may be IGZO, alO, moO or WOx, for example. The TCO may be, for example, indium Zinc Oxide (IZO), indium Tin Oxide (ITO), or aluminum doped zinc oxide (AZO).

In particular, a method according to the present disclosure includes a first deposition. An example of a configuration of the system 100 during a first deposition is illustrated in fig. 1A. The first deposition includes: sputtering is performed from the first and second rotating targets through an adjustable gap 115 having a size less than the first size. The first magnet assembly 112 provides a plasma confinement 114 in a first direction facing the second rotary target 120, particularly during material deposition. The second magnet assembly 122 provides plasma confinement 114 in a second direction facing the first rotating target 110, particularly during material deposition. In other words, during the first deposition, the magnet assembly may be in a target-facing sputtering configuration.

In an embodiment, the gap may be smaller than the first dimension. The first dimension is, for example, 40mm, 70mm, 100mm or 130mm. During the first deposition, as shown in fig. 1A, the gap 115 may have a size of, for example, 50 mm. Generally, the gap may have a size of, for example, 30mm, 50mm, or 70mm during the first deposition. During the first deposition, the gap may have a size greater than, for example, 5mm, 15mm, or 20 mm. During the first deposition, the size of the gap may be constant or may vary, in particular increase.

During the first deposition, features having a dimension smaller than the first dimension have the advantage of reducing the spatial variation of the deposition rate on different portions of the substrate. In particular, simultaneous deposition of materials on different portions of the substrate at very different deposition rates may be avoided. For example, when these plasma confinement directions are directly facing each other, the region of the substrate facing the central region between the rotating targets may be exposed to a much higher deposition rate than the rest of the substrate. A smaller size of the gap than the first size during the first deposition is beneficial for depositing a material having a uniform thickness.

The feature of providing plasma confinement in a first direction facing the second rotating target and in a second direction facing the first rotating target has the advantage of enabling soft deposition. For example, bombardment of the substrate by energetic particles may be reduced. Damage to the substrate, particularly to the coating on the substrate, can be reduced. This is particularly advantageous for deposition on sensitive substrates or layers, more particularly on substrates with sensitive coatings. The first deposition may be understood as a guard deposition or a seed deposition.

The first direction and the second direction deviate from being parallel to a substrate plane of the substrate by an angle smaller than a first value. In the context of the present disclosure, "substrate plane" particularly refers to the plane of the substrate 102 on which material is deposited. The first value may be, for example, 40, 30, 20, or 10 °. As shown in fig. 1A, the first direction and the second direction may be parallel to the substrate plane. In other words, the angle of deviation from an orientation parallel to the substrate plane may be 0 °. In an embodiment, the first direction and the second direction deviate from parallel to the substrate plane towards the substrate by an angle of less than 40 °, 30 ° or 20 ° and away from the substrate by an angle of less than 10 °.

An advantageous configuration may be achieved in which bombardment of the substrate by energetic particles is minimized while depositing at least a satisfactory amount of material on the substrate. If either of the first direction and the second direction is highly deviated from parallel to the substrate plane in a direction toward the substrate, an adverse bombardment of the substrate by energetic particles may ensue. If either of the first direction and the second direction is highly deviated from parallel to the substrate plane in a direction away from the substrate, an unsatisfactory low deposition rate on the substrate may ensue. Additionally or alternatively, waste of target material may result.

The first direction may correspond to a first angle, in particular a first polar angle of a polar coordinate system. The reference point, in particular the pole, of the polar coordinate system may lie on the rotational axis of the rotating target. The reference direction of the polar coordinate system may be perpendicular to the axis of rotation of the rotating target. Deviations of the first direction from parallel to the substrate plane may refer to a polar coordinate system of the first rotating target. Deviations of the second direction from parallel to the substrate plane may refer to a polar coordinate system of the second rotating target.

In an embodiment, the magnets included in each of the magnet assemblies of the system may be offset from one another in parallel. In other words, the magnets of each of the magnet assemblies of the system may enclose an opening angle. In particular, at least one of the magnets may deviate from being parallel to the central axis or symmetry axis of the magnet assembly by an angle of more than, for example, 3 °, 6 °, or 10 °. The at least one magnet may deviate from parallel to the central axis or axis of symmetry by an angle of less than, for example, 30 °, 25 °, or 15 °.

For example, when depositing the electrodes of an OLED, the material may have to be deposited on a highly sensitive layer. For some materials, particularly transparent conductive oxides or metal oxides, soft deposition via conventional techniques such as evaporation may not be possible. Embodiments of the present disclosure address this problem with a target-oriented design. According to embodiments of the present disclosure, by using a rotating target, target surface contamination may be reduced and system uptime may be increased. In addition, via soft deposition as described herein, the number of energetic particles (e.g., sputtered particles, anions, and electrons) impinging on the substrate may be reduced. Temperature variations on or near the substrate surface may be reduced. In particular, lower temperatures on or near the substrate surface may be achieved.

The method includes a second deposition over the first deposition. In particular, the second deposition provides material to a region above the material provided via the first deposition. In this regard, the term "above … …" particularly relates to configurations in which the substrate is located below the material provided via the first deposition. Generally, at least one additional deposition may be provided between the first deposition and the second deposition. During at least one additional deposition, the plasma confinement direction and gap size may be different than during the first deposition and/or the second deposition. In an embodiment, the second deposition may be provided directly on top of the first deposition.

An example of the configuration of the system 100 during the second deposition is shown in fig. 1B. The second depositing includes: sputtering is performed from the first and second rotating targets through a gap 115 having at least a second dimension that is greater than the first dimension. The first magnet assembly 112 provides plasma confinement 114 in a third direction. The second magnet assembly 122 provides the plasma confinement 114 in the fourth direction. At least one of the third direction or the fourth direction is offset from parallel to the substrate plane by an angle of at least a second value, the second value being greater than the first value.

In embodiments, the gap may be as large as the second dimension or larger. The second dimension may be, for example, 50mm, 90mm, 130mm or 180mm. The second dimension may be at least 5%, 25%, or 35% greater than the first dimension. Sputtering through gaps having larger dimensions can result in increased deposition rates. During the second deposition, the gap 115 as shown in FIG. 1B may have a size of, for example, 140 mm. Generally, during the second deposition, the gap may have a size of, for example, 120mm, 140mm, or 160 mm. In particular, the first dimension is associated with a first surface area of the slot and the second dimension is associated with a second surface area of the slot. More particularly, the second surface area is greater than the first surface area. During the second deposition, the gap may have a size of less than, for example, 220 °, 165 °, or 125 mm.

In an embodiment, at least one of the third direction or the fourth direction may deviate from being parallel to the substrate plane by an angle of at least a second value, as described above. The second value may be, for example, 15 °, 30 °, 50 °, or 70 °. The second value may be at least 5%, 25% or 35% greater than the first value. The first value relates in particular to a first direction and a second direction as defined above. The third direction and the fourth direction may each deviate from being parallel to the substrate plane by an angle of at least a second value. As shown in fig. 1B, the third and fourth directions may be offset from parallel to the substrate plane by an angle of, for example, 60 °. Generally, these directions may deviate from parallel to the substrate plane by an angle of, for example, 50 °, 60 °, or 70 °. These directions may deviate from parallel to the substrate plane by an angle of less than, for example, 100 °, 95 °, or 85 °.

By changing the direction of plasma confinement, i.e., the direction in which plasma confinement is provided, the deposition rate can be increased. In particular, the plasma confinement direction may be changed by changing the position of the magnet assembly providing the plasma confinement, more particularly by rotating the magnet assembly. Changing the plasma confinement direction can also be understood as changing the sputtering direction. The gap size may increase simultaneously with the change of the plasma confinement direction. By increasing the size of the gap, the deposition rate can be increased.

When the plasma confinement direction has a large component facing the substrate, the uniformity of the deposition rate may be relatively high, for example, compared to when the plasma confinement directions face each other in a direction parallel to the substrate. When the plasma confinement direction has a large component facing the substrate, the material can be deposited with a uniform thickness, particularly even without limiting the gap size to a small value. A high deposition rate can be achieved without compromising the thickness profile of the deposited material.

The material deposited during the first deposition or initial deposition, in particular on the OLED material, may be used as a protective substance, in particular as a protective layer, before deposition with a higher material throughput, i.e. a higher deposition rate. Deposition time can be reduced compared to deposition by facing-target sputtering alone. The productivity can be improved. The exposure of the substrate to the deposition environment, particularly to residual gaseous contaminants and ultraviolet radiation from sputtering, can be reduced.

In an embodiment, the plasma confinement direction of the first magnet assembly and the second magnet assembly is gradually or stepwise changed between the first deposition and the second deposition. In particular, the positions of the first magnet assembly and the second magnet assembly are changed gradually or stepwise between the first deposition and the second deposition. During the change in the direction of plasma confinement, material may be deposited on the substrate, particularly continuing to deposit on the substrate. The gap size may be changed, in particular increased, simultaneously with the change of the plasma confinement direction.

In an embodiment, the slit, in particular the shield providing the slit, is electrically insulating. More particularly, the shield may have a defined potential. The shield may be cooled to a temperature of less than, for example, 85 ℃, 80 ℃, or 60 ℃. The temperature may be higher than, for example, 20 ℃, 30 ℃ or 40 ℃. The shield may comprise a planar surface. The surface of at least one shield may be roughened, in particular in order to avoid flaking.

The present disclosure further relates to a controller configured to be connectable to a system for depositing a material as described herein. In particular, the controller is configured to control the system such that the method of depositing at least one material as described herein is performed.

The controller may include a Central Processing Unit (CPU), a memory, and, for example, support circuitry. To facilitate control of the system, the CPU may be one of any form of general-purpose computer processor that may be used in an industrial environment to control the various components and sub-processors. The memory is coupled to the CPU. The memory or computer readable medium may be one or more readily available memory devices such as random access memory, read only memory, floppy disk, hard disk, or any other form of digital storage device (whether local or remote). The support circuits may be coupled to the CPU to support the processor in a conventional manner. These circuits include caches, power supplies, clock circuits, input/output circuitry and related subsystems, etc.

The control instructions are typically stored in memory as software routines or programs. The software routines or programs may also be stored and/or executed by a second CPU that is remotely located relative to the hardware controlled by the CPU. According to any of the embodiments of the present disclosure, a software routine or program, when executed by a CPU, transforms a general purpose computer into a special purpose computer (controller) that controls the system for depositing material.

The methods of the present disclosure may be implemented as software routines or programs. At least some of the method operations disclosed herein may be performed via hardware as well as by a software controller. Thus, embodiments may be implemented in software executing on a computer system, as well as in hardware embodied as an application specific integrated circuit or another type of hardware, or in a combination of software and hardware. The controller may perform or carry out a method of depositing material on a substrate according to embodiments of the present disclosure. The methods described herein may be performed using a computer program, software, a computer software product, and an associated controller that may have a CPU, memory, user interface, and input and output devices in communication with corresponding components of a system for depositing material.

Fig. 2 is a diagram illustrating a method of depositing material on a substrate according to embodiments described herein. The method may be performed, for example, by a system as described above with respect to fig. 1A-1B. In block 202, the method 200 includes a first deposition including: sputtering from the first and second rotating targets is performed through a gap that is adjustable and has a size less than the first size. The first rotating target has a first magnet assembly that provides plasma confinement in a first direction facing the second rotating target. The second rotary target has a second magnet assembly that provides plasma confinement in a second direction facing the first rotary target. The first direction and the second direction deviate from being parallel to the substrate plane of the substrate by an angle smaller than a first value.

The method includes, in block 204, adjusting a size of the gap to at least a second size, the second size being greater than the first size. The magnet assemblies are adapted such that the first magnet assembly provides plasma confinement in a third direction and the second magnet assembly provides plasma confinement in a fourth direction. At least one of the third direction or the fourth direction is offset from parallel to the substrate plane by an angle of at least a second value, the second value being greater than the first value. In particular in embodiments wherein the magnet assembly comprises a permanent magnet, adapting the magnet assembly may be understood as providing the magnet assembly to a specific position within the rotating target, in particular providing the magnet assembly with a specific orientation.

In block 206, the method includes performing a second deposition over the first deposition. The second depositing includes: sputtering is performed from the first and second rotating targets through a gap, the gap having a second dimension. The first magnet assembly provides plasma confinement in a third direction. The second magnet assembly provides plasma confinement in a fourth direction.

Fig. 4 is a schematic cross-sectional view of a system for depositing at least one material according to embodiments described herein. The system may be particularly suitable for applications in high-throughput mass production. The system 300 is used to deposit at least one material on the substrate 102. The features described above with respect to fig. 1-2 may be applied mutatis mutandis to the systems and methods described below with respect to fig. 3-5.

The system 300 includes a first target support for the first rotary target 110. The first rotary target 110 may be mounted to a first target support. The system includes a first magnet assembly 112 connectable to a first target support. In particular, when the first magnet assembly 112 is connected and the first rotary target 110 is mounted to the first target support, the first magnet assembly 112 is positioned within the first rotary target 110. In an embodiment, the system 300 includes a first rotary target 110.

The system 300 includes a second target support for the second rotary target 120 and a third target support for the third rotary target 330. The second and third rotary targets may each be mounted to a respective target support. In an embodiment, the system includes a second rotary target and a third rotary target.

The system includes a second magnet assembly 122 connectable to a second target support. Similar to the first magnet assembly, the second magnet assembly 122 may be positioned within the second rotary target 120 when the second magnet assembly 122 is coupled to the second target support. The system further includes a third magnet assembly 332 connectable to a third target support. Similar to the first magnet assembly, the third magnet assembly 332 may be positioned within the third rotary target 330 when the third magnet assembly 332 is connected to the third rotary target support.

In an embodiment, in the connected state, the first magnet assembly and the second magnet assembly face in directions that deviate from parallel to the substrate plane of the substrate 102 by an angle that is less than a first value. In the context of the present disclosure, the connection state of the magnet assembly is understood in particular to be the connection of the magnet assembly to the target support. The third magnet assembly 332 may face in a connected state in a direction that is offset from parallel to the substrate plane by an angle of at least a second value. The second value is greater than the first value. In the connected state, the position, in particular the orientation, of the magnet assembly may be fixed.

As described above, the first magnet assembly and the second magnet assembly may face a direction that deviates from parallel to the substrate plane by an angle less than the first value. The first value may be, for example, 40 °, 30 °, 20 °, or 10 °. In particular, the first magnet assembly faces in a first direction and the second magnet assembly faces in a second direction. As shown in fig. 4, the first direction and the second direction may be parallel to the substrate plane. In other words, the angle of deviation from an orientation parallel to the substrate plane may be 0 °. In an embodiment, the first direction and the second direction deviate from parallel to the substrate plane towards the substrate by an angle of less than 40 °, 30 ° or 20 ° and away from the substrate by an angle of less than 10 °. In addition, as described above, the third magnet assembly may face in a direction that is offset from parallel to the substrate plane by at least a second value. The second value may be, for example, 15 °, 30 °, 50 °, or 70 °. The second value may be at least 5%, 25% or 35% greater than the first value.

In an embodiment, the system 300 includes a first gap 115 disposed in or between the shields to allow sputtered material from the first and second rotating targets to reach the substrate 102. A first slit 115 may be provided between the first shield 106 and the second shield 116, as shown in the depicted embodiment.

In an embodiment, the system 300 includes a second gap 335 disposed in the shield or between the two shields to allow sputtered material from at least the third rotating target 330 to reach the substrate 102. The size of second gap 335 is greater than the size of first gap 115. A second gap 335 may be provided between the second shield 116 and the third shield 126, as shown in the depicted embodiment. The dimensions of the first and second slits may be fixed. In particular, the positions of the first shield, the second shield and the third shield may be fixed. A deposition system that is structurally simple can be provided.

In an embodiment, the first gap is smaller than the first dimension. The first dimension may be, for example, 40mm, 70mm, 100mm, or 130mm. The first slit may have a size of, for example, 30mm, 50mm or 70 mm. The first slit may have a size greater than, for example, 5mm, 15mm or 20 mm. The second gap may be at least as large as the second dimension. The second dimension may be, for example, 50mm, 90mm, 130mm or 180mm. The second dimension may be at least 5%, 25%, or 35% greater than the first dimension. Sputtering through gaps having larger dimensions can result in increased deposition rates. The second slit may have a size of, for example, 120mm, 140mm or 160 mm. The second slit may have a size smaller than, for example, 220mm, 165mm or 125 mm.

In embodiments, the position or orientation of the magnet assemblies (e.g., first, second, and third magnet assemblies) of the system may be adaptable. Additionally or alternatively, the dimensions of the system slit (e.g., the first slit and the second slit) may be adaptable. The advantage is that the system can be tuned according to, for example, the sensitivity of the substrate used, in particular the sensitivity to the particular material to be deposited under certain process parameters.

In an embodiment, the system 300 includes at least one additional rotating target. In total, the system may comprise, for example, more than 3, 5 or 7 rotating targets. The rotating targets of the system can be understood to form an array of rotating targets. For example, the system shown in FIG. 4 includes eight rotating targets.

Generally, the system can include at least one pair of rotating targets adapted or adaptable to the FTS, wherein the plasma confinement direction is at least substantially parallel to the substrate plane. In the illustrated embodiment, one such pair formed by a first rotary target 110 and a second rotary target 120 is shown. Soft deposition as described herein may be provided.

The system may include at least one pair of rotating targets adapted or adaptable to FTS, wherein the plasma confinement direction deviates from parallel to the substrate plane by an angle of less than, for example, 90 °, 85 °, 65 °, or 50 °. In the depicted embodiment, two such pairs are shown. In particular, one of the pairs of rotary targets includes a third rotary target 330 and a fourth rotary target 340. An increased deposition rate may be provided while at least partially maintaining the soft deposition characteristics.

The system may further comprise at least one rotating target adapted or adaptable to sputter in a plasma confinement direction at least substantially facing the substrate. In the illustrated embodiment, two such rotary targets are shown, a seventh rotary target 370 and an eighth rotary target 380. A particularly high deposition rate may be provided.

The system may comprise at least one further slit. In particular, for each pair of rotating cathodes, the system may include a slit for allowing material sputtered from the pair of rotating cathodes to reach the substrate. In particular, the dimensions of the further gap may be adapted or can be adapted to suitable values for the specific configuration of the rotating target. More particularly, each slit is provided in the shield or between at least two shields. Each of the shields may include at least one shield magnet assembly.

For example, as shown in fig. 4, the system may include a third slot 355 adjacent to the second slot 335. The system may include a fourth slot 375 adjacent to the third slot 355. In particular, a third gap 355 is provided between the third shield 126 and the fourth shield 136. A fourth gap 375 may be provided between the fourth shield 136 and the fifth shield 146. The third gap may be, for example, at least 5%, 25% or 35% larger than the second gap. The fourth gap may be, for example, at least 5%, 25% or 35% larger than the third gap.

In an embodiment, the system 300 includes a controller configured to control the system such that the method of depositing at least one material on a substrate as described herein is performed. The method may be particularly suited for in-line dynamic deposition systems.

In particular, a method according to the present disclosure includes a first deposition. The first deposition includes sputtering from a first rotating target and a second rotating target through a first gap 115. The first rotary target 110 has a first magnet assembly 112 that provides plasma confinement 114 in a first direction facing the second rotary target 120. The second rotary target 120 has a second magnet assembly 122 that provides the plasma confinement 114 in a second direction facing the first rotary target 110. The first direction and the second direction deviate from being parallel to the substrate plane of the substrate 102 by an angle smaller than a first value. The first deposition may be understood as a guard deposition or a seed deposition, similar to that described in detail above with particular reference to fig. 1-2.

The method includes a second deposition over the first deposition. In particular, the second deposition provides material to a region above the material provided via the first deposition. In this regard, the term "above … …" particularly relates to configurations in which the substrate is located below the material provided via the first deposition. Generally, at least one additional deposition may be provided between the first deposition and the second deposition. The magnet assembly for the at least one further deposited target may provide a plasma confinement direction that is different from the plasma confinement direction associated with the first deposition or the second deposition. The at least one further deposition may include sputtering through a respective gap having a different size than the first gap and/or the second gap associated with the second deposition. In an embodiment, the second deposition may be provided directly over the first deposition.

The second depositing includes: sputtering is performed from at least the third rotary target 330 through the second gap 335. The size of second gap 335 is greater than the size of first gap 115. The third rotary target 330 has a third magnet assembly 332 that provides the plasma confinement 114 in a third direction. The third direction is offset from parallel to the substrate plane by an angle of at least a second value. The second value is greater than the first value.

A dynamic deposition process may be used to deposit at least one material on the substrate 102. In particular, the substrate 102 may move past the rotating target as material is deposited. More particularly, the substrate 102 may be moved in a direction such that the substrate 102 moves past the first rotary target 110 before moving past the second rotary target 120. The deposition chamber 150 may be separated from another chamber (not shown) by a valve.

The method may include sputtering a layer stack. The layer stack may include a metal and a Transparent Conductive Oxide (TCO) deposited on the metal. For example, the layer stack may include Ag deposited on IZO. During sputtering of metal, the magnet assembly may be in a Facing Target Sputtering (FTS) configuration, particularly to provide soft deposition. Soft deposition may be understood as deposition of features of the first deposition according to the method. In particular, a magnet assembly in an FTS configuration may be understood as a magnet assembly having a plasma confinement direction that deviates from parallel to the substrate plane by an angle of less than, for example, 90 °, 85 °, 65 °, or 50 °, or even at least substantially parallel to the substrate plane.

The TCO may be deposited in part with the magnet assembly in the FTS configuration and in part with the magnet assembly in the direct sputtering configuration. Partially depositing TCO with the magnet assembly in the FTS configuration can be understood as performing seed deposition. In particular, the material deposited during the seed deposition is part of the final TCO layer after the full deposition is completed.

The layer stack may include a first metal layer and a second metal layer deposited on the first metal layer. The layer stack may also include a TCO deposited on the second metal. As an example, the first metal may be Li or Yb, the second metal may be Ag, and the TCO may be IZO.

The layer stack may include a first metal oxide layer and a second metal oxide layer. The first metal oxide and the second metal oxide may be different materials or the same material but with different stoichiometries. As an example, the first metal oxide layer and the second metal oxide layer may be respectively IGZO layers having different stoichiometries.

The layer stack may include a first TCO layer, a metal layer deposited on the first TCO layer, and a second TCO layer deposited on the metal layer. For example, the first TCO layer and the metal layer may be deposited using a magnet assembly in an FTS configuration. The second TCO layer may be deposited in part in the FTS configuration and in part in the direct sputtering configuration.

In an embodiment, metal is deposited with only the magnet assembly in the FTS configuration. The metal oxide may be deposited, for example, with a magnet assembly in an FTS configuration. Alternatively, the metal oxide may be deposited in part with the magnet assembly in the FTS configuration and in part with the magnet assembly in the direct sputtering configuration.

In the context of the present disclosure, depositing a material will be understood in particular as depositing a single layer. A single layer may be partially deposited with different deposition system configurations. A single layer may be partially deposited by at least one different deposition source. The material properties may be at least substantially uniform within a single layer.

Fig. 5 is a schematic cross-sectional view of a system for depositing material according to embodiments described herein. The system 400 is a variation of the system shown in fig. 4. It can be seen that in addition to the second magnet assembly 122, the system 400 can also include a fourth magnet assembly 442 that can be coupled to the second target support. In particular, when the fourth magnet assembly 442 is connected and the second rotary target 120 is mounted to the second target support, the fourth magnet assembly 442 is positioned within the second rotary target 120. The fourth magnet assembly 442 may be adapted or can be adapted to provide plasma confinement in a direction facing the third rotary target 330.

Similarly, in addition to the third magnet assembly 332, the system may also include a fifth magnet assembly 452 that may be connected to a third target support. By including a rotating target with more than one magnet assembly, the deposition rate may be increased as compared to a system in which only one magnet assembly is positioned in each rotating target. This improvement results mainly from the production of two runways. In particular, the two runways are located in different sections or even on opposite sides of the target. The remaining features of the system may at least substantially correspond to the features described above with respect to fig. 4.

Fig. 3 is a chart illustrating a method of depositing at least one material according to embodiments described herein. The method may be performed, for example, by the system described above with respect to fig. 4-5. The method may be particularly suitable for batch-type dynamic deposition systems. The method 500 is for depositing at least one material on a substrate. The at least one material may comprise a metal, a metal oxide, or a transparent conductive oxide.

In block 502, the method 500 includes a first deposition. The first deposition includes: sputtering is performed from the first rotating target and the second rotating target through the first gap. The first rotating target has a first magnet assembly that provides plasma confinement in a first direction facing the second rotating target. The second rotary target has a second magnet assembly that provides plasma confinement in a second direction facing the first rotary target. The first direction and the second direction deviate from being parallel to the substrate plane of the substrate by an angle smaller than a first value. The first value may be, for example, 40, 30, 20, or 10 °.

The method may include moving the substrate in a direction parallel to a substrate plane of the substrate in block 504. In particular, materials deposited on the substrate during a first deposition may be transported to different locations where subsequent depositions may be performed.

In block 506, the method includes performing a second deposition over, and in particular directly over, the first deposition. The second depositing includes: sputtering from at least the third rotary target through the second gap. The second slit has a larger size than the first slit. The third rotary target has a third magnet assembly that provides plasma confinement in a third direction. The third direction is offset from parallel to the substrate plane by an angle of at least a second value. The second value is greater than the first value.

The embodiments described herein may be used for display PVD, i.e. sputter deposition on large area substrates for the display market. According to some embodiments, a large area substrate or corresponding carrier (where the carrier has multiple substrates) may have a thickness of at least 0.67m ² Is a size of (c) a. Typically, the size may be about 0.67m2 (0.73 m by 0.92m, i.e. generation 4.5) to about 8m ² More typically about 2m ² Up to about 9m ² Or even up to 12m ² . Typically, the substrate or carrier employing the structures, apparatus (such as cathode assemblies), and methods according to embodiments described herein is a large area substrate as described herein. For example, the large area substrate or carrier may be generation 4.5 (which corresponds to about 0.67m ² Substrate board(0.73 m.times.0.92 m)), 5 th generation (which corresponds to about 1.4 m) ² Substrate (1.1 m×1.3 m)), 7.5 th generation (which corresponds to about 4.29 m) ² Substrate (1.95 m 2.2 m)), generation 8.5 (which corresponds to about 5.7 m) ² Substrate (2.2 m×2.5 m)) or even the 10 th generation (which corresponds to about 8.7 m) ² Substrate (2.85 m×3.05 m)). Even higher generations (such as 11 th and 12 th generations) and corresponding substrate areas may be similarly implemented.

While the foregoing is directed to embodiments, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof. The scope is to be determined by the appended claims.

Claims

1. A method of depositing at least one material on a substrate, the method comprising:

a first deposition, the first deposition comprising:

sputtering from a first rotary target and a second rotary target through a gap, the gap being adjustable and having less than a first dimension, the first rotary target having a first magnet assembly providing plasma confinement in a first direction facing the second rotary target, the second rotary target having a second magnet assembly providing plasma confinement in a second direction facing the first rotary target, the first and second directions being offset from parallel with a substrate plane of the substrate by an angle less than a first value, and

A second deposition over the first deposition, the second deposition comprising:

sputtering from the first and second rotary targets through the gap, the gap having at least a second dimension, the second dimension being greater than the first dimension, the first magnet assembly providing plasma confinement in a third direction, the second magnet assembly providing plasma confinement in a fourth direction, at least one of the third direction or the fourth direction being offset from parallel to the substrate plane by an angle of at least a second value, the second value being greater than the first value.

2. The method of claim 1, wherein the first value is 20 °.

3. The method of any of the preceding claims, wherein a plasma confinement direction of the first magnet assembly and the second magnet assembly gradually changes between the first deposition and the second deposition.

4. The method of any preceding claim, wherein the size of the gap gradually changes between the first deposition and the second deposition.

5. A method according to any of the preceding claims, wherein the slit is provided as a gap between at least two shields.

6. The method of any one of the preceding claims, wherein the at least one material comprises a metal, a metal oxide, or a transparent conductive oxide.

7. A controller configured to be connectable to a system for depositing material and further configured to control the system such that the method according to any one of claims 1 to 6 is performed.

8. A system for depositing at least one material on a substrate, the system comprising:

a first target support for a first rotating target;

a first magnet assembly connectable to the first target support;

a second target support for a second rotary target;

a second magnet assembly connectable to the second target support;

an adjustable gap disposed in or between at least two shields to allow sputtered material to reach the substrate; and

the controller of claim 7.

9. The system of claim 8, further comprising:

a first shield positioned between the first rotary target and the deposition region, and

A second shield positioned between the second or third rotating target and the deposition region, wherein

The first shield includes a first shield magnet assembly, and wherein

The second shield includes a second shield magnet assembly facing the first shield magnet assembly.

10. A method of depositing at least one material on a substrate, the method comprising:

a first deposition, the first deposition comprising:

sputtering from a first rotary target and a second rotary target through a first gap, the first rotary target having a first magnet assembly providing plasma confinement in a first direction facing the second rotary target, the second rotary target having a second magnet assembly providing plasma confinement in a second direction facing the first rotary target, the first and second directions being offset from parallel with a substrate plane of the substrate by an angle less than a first value; and

a second deposition over the first deposition; the second depositing includes:

sputtering from at least a third rotary target through a second gap, the second gap having a larger dimension than the first gap, the third rotary target having a third magnet assembly providing plasma confinement in a third direction, the third direction being offset from parallel to the substrate plane by at least a second value, the second value being greater than the first value.

11. The method of claim 10, wherein the first value is 20 °.

12. The method of any one of claims 10 to 11, wherein the at least one material comprises a metal, a metal oxide, or a transparent conductive oxide.

13. A controller configured to be connectable to a system for depositing material and further configured to control the system such that the method according to any one of claims 10 to 12 is performed.

14. A system for depositing at least one material on a substrate, the system comprising:

a first target support for a first rotating target;

a first magnet assembly connectable to the first target support;

a second target support for a second rotary target;

a second magnet assembly connectable to the second target support;

a third target support for a third rotary target,

a third magnet assembly connectable to the third target support;

a first slit disposed in or between the shields;

A second slit disposed in or between the shields; and

the controller according to claim 13.

15. A system for depositing at least one material on a substrate, the system comprising:

a first target support for a first rotating target;

a first magnet assembly connectable to the first target support;

a second target support for a second rotary target;

a second magnet assembly connectable to the second target support, the first magnet assembly and the second magnet assembly facing in a connected state at an angle offset from parallel with a substrate plane of the substrate by less than a first value;

a third target support for a third rotary target,

a third magnet assembly connectable to the third target support, the third magnet assembly facing in a connected state in a direction offset from parallel to the substrate plane by an angle of at least a second value, the second value being greater than the first value;

a first gap disposed in or between the shields to allow sputtered material from the first and second rotary targets to reach the substrate; and

A second gap disposed in or between the shields to allow sputtered material from at least the third rotating target to reach the substrate, the second gap having a larger size than the first gap.