KR20170134739A - A method for depositing a material on a substrate, a controller for controlling a material deposition process, and a device for depositing a layer on a substrate - Google Patents

Abstract

The present disclosure relates to a method for depositing a material on a substrate, the method comprising moving a substrate (10) into a processing zone in a vacuum chamber having an array of at least three sputter cathodes (110, 120) Each of the at least three sputter cathodes 110,120 provides a plasma zone 116,126 in which a deposition is performed during the operation of at least three sputter cathodes 110,120 And the plasma zone 116, 126 is rotated once about the respective rotation axis 118, 128 from the first rotation position 140, 140 to the second rotation position 144, 144 Wherein each plasma zone 116,126 is oriented to depart from the processing zone at a first rotational position 140,140 where each plasma zone 116,126 is at a first rotational position 140,140, (140, 140), the first rotational position 2 while rotating in the rotational position (144, 144), it is moved over the processing area.

Description

A method for depositing a material on a substrate, a controller for controlling a material deposition process, and a device for depositing a layer on a substrate

[0001] Embodiments of the present disclosure relate to a method for material deposition on a substrate, a controller for controlling the material deposition process, and an apparatus for layer deposition on a substrate. Embodiments of the present disclosure particularly relate to sputter processes for material deposition on a substrate, a controller for controlling the sputter process, and a sputter device.

[0002] Various methods for depositing materials on a substrate are known. For example, the substrates may be coated by a physical vapor deposition (PVD) process, a chemical vapor deposition (CVD) process, or a plasma enhanced chemical vapor deposition (PECVD) process. The process may be performed in a processing chamber or process apparatus where the substrate to be coated is located. A deposition material is provided in the apparatus. A plurality of materials, such as metals, and also oxides, nitrides, or carbides of metals, may be used for deposition on the substrate. Coated materials can be used in a variety of applications and in various technical fields. For example, substrates for displays may be coated by a physical vapor deposition (PVD) process such as a sputtering process, for example, to form thin film transistors (TFTs) on a substrate.

[0003] Due to the development of new display technologies and trend toward larger display sizes, there is a continuing need for layers or membranes used in displays that provide improved performance, for example, for electrical and / There is a demand. For example, layers or layer systems with high purity are beneficial. In addition, the uniformity of the deposited layers, such as uniform thicknesses and uniform distribution of material components, is beneficial. This applies in particular to thin layers which can be used, for example, to form thin film transistors (TFTs). In view of the above, it is advantageous to deposit layers with improved purity and / or uniformity. In addition, in order to increase the throughput of the device for layer deposition, the process time for depositing the layers must be minimized.

[0004] In view of the foregoing, there is a need for new methods for depositing materials on a substrate, overcoming at least some of the problems in the art, controllers for controlling the material deposition process, Devices are beneficial.

In view of the foregoing, there is provided a method for material deposition on a substrate, a controller for controlling the material deposition process, and an apparatus for layer deposition on a substrate. Additional aspects, advantages, and features of the present disclosure are apparent from the claims, the description, and the accompanying drawings.

[0006] According to aspects of the present disclosure, a method is provided for material deposition on a substrate. The method includes moving a substrate into a processing zone in a vacuum chamber having an array of at least three sputter cathodes, each of the at least three sputter cathodes providing a plasma zone in which at least three sputter cathodes An evaporation material is supplied during operation; And rotating each plasma zone about a respective rotational axis from a first rotational position to a second rotational position only once, wherein each plasma zone is configured to move away from the processing zone in a first rotational position Wherein each plasma zone travels across the processing zone during rotation from a first rotational position to a second rotational position.

[0007] According to another aspect, a controller for controlling a material deposition process is provided. The controller is configured to perform a method for material deposition on a substrate, according to embodiments described herein.

[0008] According to another aspect, an apparatus for depositing a layer on a substrate is provided. The apparatus includes a vacuum chamber having a processing region for processing a substrate, an array of at least three sputter cathodes, each of the at least three sputter cathodes providing a plasma zone, wherein in the plasma zone, during operation of the at least three sputter cathodes And a controller configured to rotate each plasma zone only once about a respective rotational axis from a first rotational position to a second rotational position, wherein each plasma zone comprises a first Wherein the controller is configured to move each plasma zone across the processing zone by rotating each plasma zone from a first rotational position to a second rotational position in a rotational position, wherein the controller is configured to move each of the plasma zones across the processing zone .

[0009] Embodiments also relate to devices for performing the disclosed methods and apparatus portions for performing each of the described method aspects. These methodological aspects may be performed by hardware components, by a computer programmed by appropriate software, by any combination of the two, or in any other manner. In addition, embodiments in accordance with the present disclosure also relate to methods for operating the described apparatus. This includes aspects of the method for performing all of the respective functions of the device.

[0010] In the manner in which the above-recited features of the present disclosure can be understood in detail, a more particular description of the present disclosure, briefly summarized above, may be had by reference to embodiments. BRIEF DESCRIPTION OF THE DRAWINGS The accompanying drawings relate to embodiments of the present disclosure and are described below.
Figure 1 shows a schematic view of sputter cathodes with tubular rotatable cathodes used in a method for material deposition on a substrate, in accordance with embodiments described herein.
Figures 2A and 2B illustrate schematic diagrams of sputter cathodes with tubular rotatable cathodes, illustrating a method for material deposition on a substrate, in accordance with embodiments described herein.
Figure 3 shows a schematic view of a sputter cathode having a planar rotatable cathode illustrating a method for material deposition on a substrate, according to further embodiments described herein.
Figure 4 shows a schematic plan view of an apparatus for depositing layers on a substrate, with the sputter cathodes not facing the processing zone, according to embodiments described herein.
Figure 5 shows a schematic plan view of an apparatus for depositing layers on a substrate, with the sputter cathodes moving over the processing zone, in accordance with the embodiments described herein.

[0011] Reference will now be made in detail to various embodiments of the present disclosure, and one or more examples of various embodiments thereof are illustrated in the drawings. In the following description of the drawings, like reference numerals refer to like components. In general, only differences for the individual embodiments are described. Each example is provided by way of illustration of the present disclosure and is not intended as a limitation of the present disclosure. Additionally, features illustrated or described as part of one embodiment may be used with other embodiments or for other embodiments to produce further embodiments. The description is intended to cover such modifications and variations.

[0012] Due to the development of new display technologies and trend toward larger display sizes, there is a continuing need for layers or layer systems with improved purity. This applies in particular to thin layers or thin films that can be used, for example, to form thin film transistors (TFTs). In addition, there is a need for layers or layer systems with improved uniformity. As an example, layers or layer systems with uniform thickness are beneficial. Moreover, in order to increase the throughput of the device for layer deposition, the process time for deposition of layers or layer systems must be minimized.

[0013] According to the present disclosure, the plasma zone of the sputter cathode moves or sweeps once over the processing zone in which the substrate is located. Materials to be deposited on the substrate to form a layer may be provided in the plasma zone. Moving or sweeping once over the processing zone improves the uniformity of the layer deposited on the substrate. As an example, the thickness uniformity of the deposited layer can be improved. Additionally, impurities (e.g., oxidized particles) that may be present on the sputter cathode, such as a sputter target, may be removed from the sputter cathode or sputter target before the plasma zone is directed toward the substrate, Purity can be improved. Moreover, the process time can be minimized and the throughput of the deposition apparatus can be increased. According to some embodiments, layers of the present disclosure may also be referred to as "films" or "ultra-thin films. &Quot;

[0014] FIG. 1 illustrates a schematic diagram of a deposition arrangement 100 having sputter cathodes used in a method for depositing material on a substrate 10, in accordance with embodiments described herein.

[0015] The deposition arrangement 100 includes an array of at least three sputter cathodes. Each sputter cathode of the array of at least three sputter cathodes provides a plasma zone. As an example, the array of at least three sputter cathodes includes a first sputter cathode 110 providing a first plasma region 116, a second sputter cathode 120 providing a second plasma region 126, Lt; RTI ID = 0.0 > 130 < / RTI > Each plasma zone may rotate about a respective rotational axis from a first rotational position to a second rotational position. For example, the first plasma zone 116 may rotate about a first rotational axis 118 from a first rotational position to a second rotational position, or vice versa. The second plasma zone 126 may rotate about a second rotational axis 128 from a first rotational position to a second rotational position and vice versa. The third plasma zone 136 may rotate about a third rotational axis 138 from a first rotational position to a second rotational position or vice versa. During rotation, the plasma zones move or sweep once over the processing zone in which the substrate 10 is located. As an example, while the plasma zones move across the processing zone during rotation from the first rotation position to the second rotation position, the deposition material provided in the plasma zones is deposited on the substrate 10.

[0016] In some implementations, the rotation of the processing regions may be a clockwise or counterclockwise rotation. By way of example, the rotation from the first rotational position to the second rotational position may be a clockwise rotation, and the rotation from the second rotational position to the first rotational position may be a rotation in a counterclockwise direction. In other examples, the rotation from the first rotation position to the second rotation position may be a rotation in a counterclockwise direction, and the rotation from the second rotation position to the first rotation position may be a rotation in a clockwise direction.

[0017] In some implementations, the rotation axes of the plasma zones may be substantially parallel to the surface of the substrate 10 on which the deposition material is to be deposited at the top. The term "substantially parallel" relates to an orientation that is substantially parallel to the surface of the substrate and rotational axes, wherein the deviation from the precisely parallel orientation, e.g., a deviation of up to 10 degrees or even up to 15 degrees, Quot; substantially parallel ".

The term "processing zone" as used throughout this specification is intended to encompass a wide variety of substrates, including, but not limited to, a substrate 10 that can be positioned to deposit an evaporation material on a substrate 10, Quot; region " or " region ". The processing zone may be positioned to face at least three arrays of sputter cathodes. During the sputter deposition process, plasma zones, such as the first plasma zone 116, the second plasma zone 126, and the third plasma zone 136, are used to deposit the deposition material on the substrate 10, / RTI > The processing zone may be an area or zone provided and / or arranged for deposition (intended deposition) of the deposition material on the substrate 10.

[0019] Although three sputter cathodes are shown in the example of FIG. 1, this disclosure is not so limited. According to some embodiments, which may be combined with other embodiments described herein, an array of at least three sputter cathodes may include six or more sputter cathodes or more, ten sputter cathodes or more, such as twelve sputter Cathodes, or more. Each sputter cathode of the array may provide a respective plasma zone. According to embodiments described herein, there is provided an array of sputter cathodes configured for large area substrate deposition, wherein the array and substrate are essentially stationary relative to each other.

[0020] By way of example, the substrate is static during deposition of the deposition material. According to the embodiments described herein, a static deposition process, for example for TFT processing, can be provided. As will be appreciated by those skilled in the art, it should be noted that "static deposition processes" that differ from the dynamic deposition processes do not exclude any movement of the substrate. The static deposition process may include, for example, at least one of the following: a static substrate position during deposition; Vibrating substrate position during deposition; An essentially constant average substrate position during deposition; Dithering substrate position during deposition; Wobbling substrate position during deposition; A deposition process in which cathodes are provided in one vacuum chamber, i. E., A predetermined set of cathodes is provided in a vacuum chamber; A substrate position in which the vacuum chamber has a sealed atmosphere relative to neighboring chambers, e.g., by closing valve units that separate the vacuum chamber from the adjacent chamber during deposition of the layer; Or a combination thereof. The static deposition process can be understood as a deposition process in which the substrate has a static position, a deposition process in which the substrate is essentially static, or a deposition process in which the substrate has a partially static position. In view of this, static deposition processes, which in some cases can not completely move the substrate position during deposition, can still be distinguished from dynamic deposition processes.

[0021] According to some embodiments that may be combined with other embodiments described herein, the sputter cathodes may be connected to a DC power supply, so that sputtering may be performed as DC sputtering. According to some embodiments that may be combined with other embodiments described herein, the sputter cathodes may be connected to an AC power supply, such that the rotatable cathodes are coupled to an AC power supply such as, for example, MF (intermediate frequency) sputtering, RF Frequency) sputtering, and the like.

[0022] For example, the sputter cathodes may each be a rotatable cathode. The rotatable cathode may be rotatable about an axis of rotation that may or may not coincide with a rotational axis about which each plasma zone is rotated about its center. In some embodiments, the first sputter cathode 110 is a first rotatable cathode 112 (or first rotatable target) and the second sputter cathode 120 is a second rotatable cathode 122 Second rotatable target) and the third sputter cathode 130 is the third rotatable cathode 132 (or third rotatable target). The first rotatable cathode 112 may be rotatable about a first rotational axis 118 and the second rotatable cathode 122 may be rotatable about a second rotational axis 128, The rotatable cathode 132 may be rotatable about a third axis of rotation 138. Rotatable cathodes or rotatable targets may be connected to respective rotating shafts, or connecting elements that connect the shafts to rotatable cathodes or rotatable targets. In some implementations, the sputter cathodes may be tubular sputter cathodes.

[0023] According to some embodiments that may be combined with other embodiments described herein, each sputter cathode of an array of at least three sputter cathodes comprises a magnet assembly. For example, the first sputter cathode 110 has a first magnet assembly 114, the second sputter cathode 120 has a second magnet assembly 124, and the third sputter cathode 130 has a third magnet assembly Assembly 134. A magnet assembly may be provided on each rotatable cathode. Sputter cathodes with rotatable cathodes and magnet assemblies can provide magnetron sputtering for deposition of layers.

[0024] As used herein, "magnetron sputtering" refers to sputtering performed using a magnetron, ie, a magnet assembly, ie, a unit capable of generating a magnetic field. Such a magnet assembly may consist of one or more permanent magnets. These permanent magnets may be arranged in a rotatable cathode or rotatable target in such a manner that free electrons are trapped behind the target material of the target, e.g., in a generated magnetic field generated below the surface of the rotatable cathode or rotatable target . The arrangement of the permanent magnets behind the target material of the target is understood to be an arrangement in which the target material is provided between the permanent magnets and the processing zone or substrate when the plasma zones are directed towards the processing zone or substrate 10. [ That is, in the event that the plasma zones are directed towards the processing zone or substrate 10, the processing zone or substrate 10 is not directly exposed to the permanent magnets, but rather between the processing zone or substrate 10 and the permanent magnets The target is interposed.

[0025] The sputter cathodes may each include, for example, a target of a material to be deposited on a substrate. The material of the target can include materials selected from the group consisting of aluminum, silicon, tantalum, molybdenum, niobium, titanium, copper, silver, zinc, MoW, ITO, IZO, and IGZO.

[0026] In some implementations, the deposition material is in a solid phase on a target, such as a rotatable target. Atoms of the target material, i.e., evaporation material, are ejected from the rotatable cathode or rotatable target and applied into the plasma zone by impacting the rotatable cathode or rotatable target with energetic particles. According to some embodiments, the deposition material may comprise a material selected from the group consisting of aluminum, silicon, tantalum, molybdenum, niobium, titanium, and copper. In a reactive sputtering process, one or more of the process gases, such as at least one of oxygen and nitrogen, may be supplied to the plasma zone. Reactive sputtering processes are deposition processes in which material is sputtered under process atmosphere. By way of example, the process atmosphere may include one or more process gases, such as at least one of oxygen and nitrogen, to deposit a layer or material containing oxide or nitride of the deposition material.

[0027] The deposition material is provided in a plasma zone. By way of example, magnet assemblies of sputter cathodes can be utilized to define a plasma for improved sputtering conditions. In some implementations, the plasma zone may be understood as a sputtering plasma or sputtering plasma zone provided by a sputter cathode. Plasma confinement can also be utilized to tune the particle distribution of the material to be deposited on the substrate. In some embodiments, the plasma zone corresponds to a zone containing atoms of a target material (deposition material) that is ejected or ejected from the target. The plasma zone may be defined by magnet assemblies, i.e., magnetrons, wherein the ions and electrons of the processing gases and / or the deposition material are confined to magnetrons or magnet assemblies. At least some of the atoms ejected or ejected from the target are deposited on the substrate to form a layer.

[0028] In some implementations, the plasma zone extends in the circumferential direction of each sputter cathode, eg, a rotatable cathode or rotatable target. By way of example, the plasma zone does not extend in the circumferential direction over the entire circumference of the rotatable cathode or the rotatable target. According to some embodiments, the plasma zone extends over less than a third of the overall circumference of the rotatable cathode or rotatable target, and specifically less than a quarter. Based on the rotational position of the plasma zone, the plasma zone may be facing the processing zone, or the plasma zone is not facing the processing zone (e.g., in the first rotational position) (not directed to the processing zone).

[0029] The plasma zone may take different rotational positions with respect to the processing zone and / or the rotational axis of the plasma zone. By way of example, the first plasma zone 116 may take different rotational positions relative to the first rotational axis 118. The second plasma zone 126 may take different rotational positions with respect to the second rotational axis 128. The third plasma zone 136 may take different rotational positions with respect to the third rotational axis 138. According to some embodiments, as shown in the example of FIG. 1, each plasma zone may have rotational positions at which the plasma zone is directed to the processing zone in which the substrate 10 is located. That is, the plasma zone is directed to the substrate 10 such that the deposition material is deposited on the substrate 10 to form a layer. The plasma zone may have other rotational positions where the plasma zone is not facing the processing zone. That is, the plasma zone is directed away from the substrate 10 (e.g., the first rotational position, and optionally the second rotational position) such that deposition material is not deposited on the substrate 10.

[0030] According to some embodiments that may be combined with other embodiments described herein, plasma zones may be formed by rotating the magnet assemblies of the sputter cathars about their respective rotation axes, . The rotation axes of the plasma zones and the rotation axes of the magnet assemblies may or may not be the same. By way of example, the first plasma zone 116 may be configured to rotate the first magnet assembly 114 of the first sputter cathode 110 about the first axis of rotation 118, As shown in FIG. The second plasma region 126 is rotated about the second rotational axis 128 by rotating the second magnet assembly 124 of the second sputter cathode 120 about the second rotational axis 128 . The third plasma zone 136 is rotated about the third axis of rotation 138 by rotating the third magnet assembly 134 of the third sputter cathode 130 about the third axis of rotation 138 . The deposition arrangement may include a drive or motor for rotating the magnet assemblies about their respective rotation axes. The drive or motor may be included in the sputter cathode, or may be included in an end block associated with the sputter cathode. According to some implementations, the endblock may be considered to be part of a sputter cathode.

[0031] FIG. 2A shows a schematic view of the deposition arrangement 100 of FIG. 1 illustrating a method for depositing material on a substrate 10. In the example of Figure 2a, the plasma zone is rotated once less than 360 degrees. FIG. 2B shows a schematic view of the deposition arrangement 100 of FIG. 1, illustrating a method for depositing material on a substrate 10, according to additional embodiments. In the example of FIG. 2B, the plasma zone is rotated once about 360 degrees. That is, in FIG. 2B, the plasma zone performs a complete rotation or rotation cycle about the rotation axis, i.e., about 360 degrees. To provide a better overview, the examples of FIGS. 2A and 2B illustrate only two sputter cathodes of an array of at least three sputter cathodes.

[0032] In the method according to the present disclosure, the substrate 10 is moved into a processing zone in a vacuum chamber (not shown) having an array of at least three sputter cathodes. At least three of the sputter cathodes provide plasma zones, and in those plasma zones, the deposition material is supplied during operation of at least three sputter cathodes. The plasma zones are rotated only once around the respective rotational axes from the first rotational position 140 to the second rotational position 144 and vice versa. By way of example, the first plasma zone 116 is rotated only once around the first rotational axis 118 from the first rotational position 140 to the second rotational position 144, or vice versa. The second plasma zone 126 is rotated only once about the second rotational axis 128 from the first rotational position 140 to the second rotational position 144 and vice versa. As described with reference to FIG. 1, rotating the plasma zones only once around each of the rotation axes may include rotating the magnet assemblies about the rotation axes.

While the plasma zones are moving or sweeping through the processing zone while rotating from the first rotation position 140 to the second rotation position 144, the deposition material provided by the plasma zones is moved to the substrate 10, Lt; / RTI >

[0034] The plasma zones are rotated once around the rotation axes for deposition of the layer on the substrate 10. That is, only one rotation about the axis of rotation is performed and only in one direction. By way of example, the rotation may be a clockwise or counterclockwise rotation. According to some embodiments, which may be combined with other embodiments described herein, the method may include moving the substrate 10 out of the processing zone, and moving the substrate 10 into the processing zone when the plasma zones have moved once across the processing zone And moving the substrate. The method described above for material deposition can be repeated for another substrate to form another layer on the other substrate.

[0035] Moving or sweeping the plasma zones only once over the processing zone can improve the purity and / or uniformity of the layers deposited on the substrate. By way of example, impurities (e.g., oxidized particles) that may be present on a target of at least three sputter cathodes are removed from the target before the plasma zone is directed toward the substrate for deposition, Can be improved. For example, in the case where the first rotational position corresponds to the rotational position before material deposition is performed, the following aspects may be provided. During the first rotational position the plasma zones are directed away from the processing zone, impurities are removed from the target. Thin layers can be deposited on the substrate by moving the plasma zones only once over the substrate positioned in the processing zone from the first rotational position to the second rotational position. In addition, if the second rotational position is a rotational position in which the plasma zones are directed to deviate from the processing zone, the uniformity of the deposited layers, such as thickness uniformity, can be improved. Moreover, the process time can be minimized and the throughput of the device for layer deposition can be increased.

[0036] In the examples described in the present disclosure, the magnet assemblies of the plasma zones and, optionally, the sputter cathodes have substantially identical orientations (eg, rotational positions) in a two-dimensional plane perpendicular to the rotational axes. By way of example, the first rotational positions and the second rotational positions of all plasma zones are substantially the same or substantially the same. The term "substantially the same" or "substantially the same" relates to the orientation or positioning of plasma zones with respect to each other and / or with respect to rotational axes, wherein the numerical values from exactly the same orientation, Even a deviation of up to 15 [deg.] Is still considered to be "substantially the same orientation" or "substantially the same orientation ".

[0037] In other embodiments, the plasma zones of the sputter cathodes may have different orientations. At least some of the plasma zones, and optionally the magnet assemblies of the sputter cathodes, may have different orientations (e.g., rotational positions) in a two-dimensional plane perpendicular to the rotational axes. By way of example, the first rotational positions and / or the second rotational positions of at least some of the plasma zones may be different. In some implementations, the first rotational positions and / or the second rotational positions can be different and, for example, can have different angles with respect to the rotational axis of each plasma zone. As an example, the angle of the first rotational axis 118 of the first plasma zone 116 relative to the second axis of rotation 128 (or perpendicular line 142) The second rotational position of the first plasma zone 116 relative to the first rotational axis 118 (or vertical line 142) may be different from the angle of the first rotational position of the second plasma zone 126. Similarly, May be different from the angle of the second rotational position of the second plasma zone 126 relative to the second rotational axis 128 (or vertical line 142).

[0038] In some implementations, the plasma zones of the outer sputter cathodes of the array may have rotational positions that are different from the rotation positions of the plasma zones of the inner sputter cathodes of the array. The use of such different rotational positions for the plasma zones of the outer sputter cathodes and the inner zones of the sputter cathodes can further improve the uniformity of the deposited layer, such as thickness uniformity.

[0039] According to some embodiments that may be combined with other embodiments described herein, the method includes determining (or selecting) the rotational speed of the plasma zones based on a predetermined layer thickness do. By way of example, the rotational speed of the plasma zones may be selected to allow the formation of a layer having a predetermined layer thickness. The slower the rotational speed, the longer the plasma zones will be facing the processing zone, and the layer deposited on the substrate will become thicker (e.g., up to 100 nm). The higher the rotation speed, the shorter the plasma zones will be facing the processing zone, and the layer deposited on the substrate will be thinner (e.g., less than 10 nm).

[0040] In some embodiments, rotating the plasma zones about the rotation axes includes rotating the magnet assemblies about respective rotation axes. By way of example, the first magnet assembly 114 of the first sputter cathode 110 may be rotated about a first axis of rotation 118 and the second magnet assembly 124 of the second sputter cathode 120 may be rotated And can be rotated about the second rotation axis 128. [ The rotational speed of the plasma zones may be adjusted by adjusting the rotational speed of each of the magnet assemblies of the sputter cathodes.

[0041] According to some embodiments that may be combined with other embodiments described herein, the angle between the first rotational position 140 and the second rotational position 144 for each rotational axis is between 180 and It is in the range of 360 degrees. The angle is indicated by the arrows in Figs. 2A and 2B. In FIG. 2A, the arrows connect the dashed lines indicating the first rotational position 140 and the second rotational position 144. For example, the angle between the first rotational position 140 and the second rotational position 144 for each rotational axis may be about 180 degrees or about 360 degrees. However, the present disclosure is not limited thereto. To allow plasma zones to not be directed to the processing zone at the first rotational position and optionally at the second rotational position and at least some rotational positions between the first rotational position 140 and the second rotational position 144 Any suitable angle that allows the processing zone to be directed can be selected.

[0042] The angle in the example of FIG. 2A is illustrated as the absolute angle between the first rotational position 140 and the second rotational position 144. However, the angle can also be defined as the angle with respect to the vertical line 142. The vertical line 142 may be perpendicular to the surface of the substrate 10 or perpendicular to the surface of the substrate 10 and may intersect the magnet assembly of the sputter cathode and / or the axis of rotation of each plasma zone. The angle between the first rotational position 140 and the second rotational position 144 may then be defined as the plus / minus angle with respect to the vertical line 142. [ By way of example, the angle may be plus / minus 90 degrees (corresponding to an absolute or total angle of 180 degrees) or plus / minus 180 degrees (corresponding to an absolute or total angle of 360 degrees) with respect to the vertical line 142.

[0043] According to some embodiments that may be combined with other embodiments described herein, plasma zones of three or more sputter cathodes are moved from the first rotational position 140 to the second rotational position 144, Or vice versa. That is, plasma zones of three or more sputter cathodes may have the same rotational positions or orientations during movement from first rotational position 140 to second rotational position 144 or vice versa.

[0044] In other implementations, plasma zones of three or more sputter cathodes can be rotated asynchronously. By way of example, adjacent plasma zones of three or more sputter cathodes can be rotated in opposite rotational directions, for at least 50% of the travel between the first and second rotational positions.

[0045] According to some embodiments that may be combined with other embodiments described herein, the rotation axes of the plasma zones are oriented vertically. Likewise, the rotational axes of the magnet assemblies can be oriented vertically. "Vertically" refers to a "vertically " or " vertically ", in order to allow for deviations from a vertical direction of 20 DEG or less, e.g. 10 DEG or less, Substantially perpendicular ". For example, such a deviation can be provided because the sputter cathode or rotatable cathode can be positioned with some deviation from the vertical orientation. However, the orientation of each rotation axis is considered to be vertical, which is considered to be different from the horizontal orientation. The term "vertically" can be understood as parallel to gravity.

[0046] In some embodiments, the substrate is in a vertical orientation. The terms "vertical direction" or "vertical orientation" are understood to distinguish between "horizontal direction" or "horizontal orientation". That is, "vertical direction" or "vertical orientation" refers to, for example, a substantially vertical orientation of the substrate, wherein the number of degrees from the correct vertical or vertical orientation, The deviation is still considered as "vertical direction" or "vertical orientation ". The vertical direction may be substantially parallel to gravity.

The term "substrate " as used herein, in particular, will include slices of transparent crystals, such as wafers, sapphire, etc., or glass plates, in particular non-flexible substrates. However, the present disclosure is not so limited, and the term "substrate" may also include flexible substrates such as webs or foils.

[0048] The embodiments described herein can be utilized for evaporation on large area substrates, for example for the manufacture of displays. For example, a large-area substrate or carrier may have GEN 4.5 corresponding to about 0.67 m ² substrates (0.73 x 0.92 m), GEN 5 corresponding to about 1.4 m ² substrates (1.1 m x 1.3 m), about 4.29 m ² substrate GEN corresponding to GEN 7.5 corresponding to 1.95 mx 2.2 m, GEN 8.5 corresponding to approximately 5.7 m ² substrates (2.2 mx 2.5 m), or even GEN corresponding to approximately 8.7 m ² substrates (2.85 mx 3.05 m) 10 < / RTI > Larger generations such as GEN 11 and GEN 12 and corresponding substrate areas can similarly be implemented.

[0049] FIG. 3 shows a schematic view of a sputter cathode having a planar rotatable cathode 510, illustrating a method for depositing material on a substrate 10, in accordance with additional embodiments described herein. The embodiment of Figure 3 is similar to the embodiments described above with reference to Figures 1, 2a, and 2b, and the description given for Figures 1, 2a, and 2b also refers to the embodiment of Figure 3 . To provide a better overview, Figure 3 illustrates only one sputter cathode of an array of at least three sputter cathodes.

[0050] In the example of FIG. 3, the sputter cathode is a planar cathode 510 that provides a plasma zone 516. Plasma zone 516 may be rotated about a rotational axis 530. By way of example, the planar cathode 510 may be rotated about an axis of rotation 530, and also the plasma zone 516 is rotated. The planar cathode 510 and correspondingly the plasma zone 516 may be rotated to move or sweep once through the processing zone to expose the substrate 10 to the plasma zone 516 and the deposition material.

[0051] The plasma zone 516 may take different rotational positions with respect to the processing zone and / or the rotational axis of the plasma zone. By way of example, and as indicated by the dashed lines in FIG. 3, the plasma zone 516 may have at least one rotational position at which the plasma zone 516 faces the processing zone in which the substrate 10 is located. That is, the plasma zone 516 is directed to the substrate 10 such that an evaporation material is deposited on the substrate 10 to form a layer. 3, the plasma zone may have other rotational positions in which the plasma zone 516 is not facing the processing zone, such as the first rotational positions, and optionally the second rotational position. That is, the plasma zone 516 is directed away from the substrate 10 so that deposition material is not deposited on the substrate 10.

[0052] A magnet assembly (not shown) may be arranged behind the planar cathode 510 or the planar target. A planar cathode 510 or planar target is provided between the processing zone or substrate 10 and the magnet assembly when the plasma zone 516 is oriented towards the processing zone or substrate 10. [

[0053] In some implementations, the planar target may extend longitudinally and widthwise. The rotation axis 530 may be substantially parallel to the longitudinal direction and substantially perpendicular to the width direction. That is, the planar cathodes or planar targets may be rotated about their longitudinal extension.

[0054] FIG. 4 shows an apparatus (not shown) for depositing layers on a substrate, in which plasma zones 2 of at least three sputter cathodes 324 are in a non-facing orientation relative to the processing zone, in accordance with embodiments described herein 300, respectively. Figure 5 shows a schematic plan view of an apparatus 300 in which plasma zones 2 of at least three sputter cathodes 324 are moving across a processing zone, according to embodiments described herein . Apparatus 300 is configured for sputter deposition, such as reactive sputter deposition.

[0055] The apparatus comprises a vacuum chamber 302 having a processing region for processing of the substrate 10, an array of at least three sputter cathodes 324, and an array of at least three sputter cathodes 324 from a first rotational position to a second rotational position, Wherein each of the at least three sputter cathodes 324 provides a plasma zone 2 in which the plasma zone 2 is at least partially filled with plasma, Deposition material is supplied during operation of at least three sputter cathodes 324. Each plasma zone 2 is oriented to deviate from the processing zone in the first rotational position. The controller is configured to move each plasma zone 2 across the processing zone by rotating each plasma zone 2 from a first rotational position to a second rotational position. The vacuum chamber 302 may also be referred to as a "processing chamber ".

[0056] In Figure 4, the plasma zones 2 of at least three sputter cathodes 324 are not facing the processing zone. A plasma zone (not shown in FIG. 4), such as a sputtering plasma, may also be defined so as not to face the substrate 10 and directed to a shield (not shown), which shields the plasma zones 2 The material to be sputtered can be collected. This state of non-exposure can be maintained, for example, until the plasmas in the plasma zones 2 provided by at least three sputter cathodes 324 are stabilized. 5, the magnet assemblies of the sputter cathodes 324 can be rotated about their rotation axes, and also the plasma zones 2 are rotated. The magnet assemblies and corresponding plasma zones 2 may be rotated to move or sweep once across the processing zone to expose the substrate 10 to the plasma zone 2 and the deposition material.

[0057] Illustratively, one vacuum chamber 302 is shown for depositing layers therein. Additional vacuum chambers 303 may be provided near the vacuum chamber 302. The vacuum chamber 302 can be separated from adjacent additional vacuum chambers 303 by valves having a valve housing 304 and a valve unit 305. [ The valve unit 305 may be closed after the carrier 314 with the substrate 10 at the top is inserted into the vacuum chamber 302 as indicated by the arrow 1. The atmosphere in the vacuum chamber 302, such as the process atmosphere for the reactive sputtering process, may be controlled by inserting one or more process gases into the processing zone in the vacuum chamber 302 and / Can be individually controlled by creating a technical vacuum using vacuum pumps connected to the vacuum pump. One or more of the process gases may include gases to create a process atmosphere for the reactive sputtering process. Within the vacuum chamber 302, the rollers 310 may be provided to transport the carrier 314 having the substrate 10 at the top into and out of the vacuum chamber 302.

[0058] At least three sputter cathodes 324 are provided in the vacuum chamber 302. At least three sputter cathodes 324 may be configured as described with respect to Figures 1, 2A, and 2B. By way of example, at least three sputter cathodes 324 may each include one or more rotatable cathodes, and one or more anodes 326. For example, one or more rotatable cathodes may have sputter targets of the material to be deposited on the substrate 10. One or more rotatable cathodes may have a magnet assembly therein, and magnetron sputtering may be performed to deposit the layers.

[0059] One or more rotatable cathodes, and one or more anodes 326, may be electrically coupled to the DC power supply 328. In some implementations, one or more rotatable cathodes may be rotated simultaneously, e.g., synchronously, toward the substrate 10 for exposure of the substrate 10. Sputtering for forming a layer on the substrate 10 may be performed as DC sputtering. One or more cathodes are connected to the DC power supply 328 together with one or more anodes 326 to collect electrons during sputtering. According to further embodiments, which may be combined with other embodiments described herein, at least one rotatable cathode of one or more rotatable cathodes comprises a plurality of rotatable cathodes, DC power supply.

[0060] Figures 4 and 5 illustrate a plurality of sputter cathodes 324, wherein each sputter cathode 324 includes one rotatable cathode and one anode 326. In particular, for applications for large area deposition, an array of sputter cathodes can be provided in the vacuum chamber 302. In some instances, six or more sputter cathodes 324 are provided. As an example, twelve sputter cathodes 324 may be provided.

[0061] In addition to the methods described herein, sputtering-before and / or target conditioning may be utilized. As shown in FIG. 4, during sputtering-before and / or during target conditioning, the plasma zones 2 may not be facing the processing zone. By way of example, during sputtering-before and / or during target conditioning, the plasma zones 2 may be directed away from the processing zone. The plasma zones 2 may be oriented, for example, toward a shield (not shown).

[0062] According to these embodiments, a controller for controlling the material deposition process is provided. The controller is configured to perform a method for material deposition on a substrate, according to embodiments described herein. The controller may be included in an apparatus for layer deposition, according to embodiments described herein. According to embodiments described herein, a controller is coupled to an input for communicating with corresponding components of an apparatus for processing computer programs, software, computer software products, and a CPU, memory, user interface, and large area substrate And by means of interrelated controllers which may have output means.

[0063] According to the present disclosure, the plasma zones of the sputter cathodes move or sweep only once over the processing zone in which the substrate is located. The plasma zones include a material to be deposited on the substrate to form a layer. Moving or sweeping once throughout the processing zone improves at least one of the uniformity and purity of the layer deposited on the substrate. As an example, the thickness uniformity of the deposited layer can be improved. Additionally, since impurities (e.g., oxidized particles) that may be present on the target of at least three sputter cathodes are removed from the target before the plasma zone is directed toward the substrate for deposition, the purity of the deposited layer Can be improved. Moreover, the process time can be minimized and the throughput of the device for layer deposition can be increased.

While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the present disclosure may be devised without departing from the basic scope thereof, and the scope of the present disclosure is defined by the following claims Is determined by the claims.

Claims (15)

A method for depositing a material on a substrate,
Moving a substrate into a processing zone in a vacuum chamber having an array of at least three sputter cathodes, each of the at least three sputter cathodes providing a plasma zone, wherein in the plasma zone, the operation of the at least three sputter cathodes The deposition material being supplied during the deposition; And
Rotating each plasma zone about the respective rotational axis from the first rotational position to the second rotational position only once
/ RTI >
Wherein each plasma zone is oriented to depart from the processing zone in the first rotational position and wherein each plasma zone is configured to move across the processing zone during rotation from the first rotational position to the second rotational position, doing,
Method for material deposition. The method according to claim 1,
Wherein the deposition material provided by the plasma zones is deposited on the substrate while the plasma zones are moving across the processing zone during rotation from the first rotation position to the second rotation position,
Method for material deposition. 3. The method according to claim 1 or 2,
Rotating the plasma zones once about the rotation axes comprises rotating the magnet assemblies about respective rotation axes,
Method for material deposition. 4. The method according to any one of claims 1 to 3,
Moving the substrate out of the processing zone when the plasma zones have moved only once over the processing zone; And
Moving another substrate into the processing zone
≪ / RTI >
Method for material deposition. 5. The method according to any one of claims 1 to 4,
Wherein an angle between the first rotational position and the second rotational position for each of the rotational axes is in a range of 180 to 360 degrees,
Method for material deposition. 6. The method according to any one of claims 1 to 5,
Wherein an angle between the first rotational position and the second rotational position for each of the rotational axes is about 360 degrees,
Method for material deposition. 7. The method according to any one of claims 1 to 6,
Wherein the array of at least three sputter cathodes comprises six or more sputter cathodes, or twelve or more sputter cathodes.
Method for material deposition. 8. The method of claim 7,
Wherein plasma zones of the at least three sputter cathodes are synchronously rotated from the first rotational position to the second rotational position,
Method for material deposition. 9. The method according to any one of claims 1 to 8,
Wherein the substrate is static during the deposition of the deposition material,
Method for material deposition. 10. The method according to any one of claims 1 to 9,
The rotational axes are oriented vertically,
Method for material deposition. 11. The method according to any one of claims 1 to 10,
Wherein the substrate is in a vertical orientation,
Method for material deposition. 12. The method according to any one of claims 1 to 11,
Wherein the deposition material comprises a material selected from the group consisting of aluminum, silicon, tantalum, molybdenum, niobium, titanium, and copper.
Method for material deposition. 13. The method according to any one of claims 1 to 12,
Further comprising determining, based on a predetermined layer thickness, a rotational speed of the plasma zones,
Method for material deposition. A controller for controlling a material deposition process,
The controller is configured to perform the method of any one of claims 1 to 13,
Method for material deposition. An apparatus for depositing a layer on a substrate,
A vacuum chamber having a processing zone for processing the substrate;
An array of at least three sputter cathodes, each of the at least three sputter cathodes providing a plasma zone, wherein in the plasma zone, an evaporation material is supplied during operation of the at least three sputter cathodes; And
A controller configured to rotate each plasma zone only once about each rotational axis from a first rotational position to a second rotational position;
/ RTI >
Each of the plasma zones being directed away from the processing zone in the first rotational position and the controller is operable to rotate the respective plasma zone from the first rotational position to the second rotational position, And configured to move respective plasma zones across the substrate,
Apparatus for layer deposition.

Images