KR20230084282A - Sputter deposition source, deposition apparatus, and method for coating a substrate - Google Patents

Abstract

According to one aspect of the present disclosure, a sputter deposition source 100 for coating a substrate 10 arranged in a coating region 105 of a deposition chamber 101 is provided. The sputter deposition source 100 includes a plurality of cathodes 120 arranged side by side in an array. Each cathode of the plurality of cathodes 120 is rotatable, a first target support section 121 for a respective first sputter target 111 and a second target for a respective second sputter target 112 It has a support section (122). In a first sputter position (I), the first target support sections 121 are directed towards the coating area 105, and in a second sputter position (II), the second target support sections 122 are directed towards the coating area It is directed towards (105). According to a second aspect, a deposition apparatus having a sputter deposition source (100) is provided. Additionally, methods of coating a substrate using a sputter deposition source are provided.

Description

Sputter deposition source, deposition apparatus, and method for coating a substrate

[0001] The present disclosure relates to a sputter deposition source configured to coat a substrate in a coating region of a deposition chamber. Specifically, the sputter deposition source may be configured to coat the substrate in the coating area with different materials, for example two different metals, by sputtering. The present disclosure further relates to deposition apparatus having a sputter deposition source, as well as coating a substrate with one or more thin layers, particularly comprising different materials, by sputtering.

[0002] Rapid formation of one or more coating layers on a substrate with high uniformity over an extended surface is a relevant issue in many technical fields. For example, in the field of thin film transistors (TFTs), thickness uniformity and uniformity of electrical properties may be an issue in order to reliably manufacture display channel regions. Moreover, a uniform layer typically facilitates manufacturing reproducibility.

[0003] One method for depositing a layer on a substrate is sputtering, which has developed as a method useful in various manufacturing fields, for example in the manufacture of TFTs. During sputtering, atoms are ejected from the sputter target by bombardment of the sputter target by energetic particles of plasma (eg, energized ions of an inert or reactive gas). The ejected atoms may be deposited on the substrate and, as a result, a layer of sputtered material may be formed on the substrate.

[0004] A sputter deposition source typically includes a sputter target that includes at least one cathode that can be set to a predetermined potential and provides a coating material to be deposited on a substrate. An electric field may be applied between the cathode and the substrate or other anode, as a result of which gas located between the cathode and the substrate may be ionized and a plasma may be created. The coating material is provided through sputtering of the target by plasma ions.

[0005] Rapidly achieving uniform layers of sputtered material across a large substrate surface is difficult to achieve, eg, due to changing plasma properties over time, which can lead to an irregular spatial distribution of the sputtered material. . It is particularly difficult to deposit two or more layers of different materials quickly and uniformly on large-area substrates in a compact deposition apparatus.

[0006] To deposit the various layers on a substrate, the substrate is typically first coated in a first deposition chamber with a first material from a first sputter source, and then the substrate is coated with a second material from a second sputter source. It is moved to the second deposition chamber. However, an apparatus with multiple sputter sources in different deposition chambers is large and expensive, and throughput is limited.

[0007] In view of the above, it would be advantageous to provide a compact sputter deposition source configured to rapidly deposit layers of different materials on substrates, particularly on large area substrates. Moreover, it would be advantageous to provide a deposition apparatus and method for rapidly and reliably coating substrates with different materials.

[0008] In view of the above, methods for coating a substrate using the sputter deposition source, as well as a deposition apparatus, are provided.

[0009] According to one aspect of the present disclosure, a sputter deposition source for coating a substrate in a coating region of a deposition chamber is provided. The sputter deposition source includes a plurality of cathodes arranged side by side in an array, each cathode of the plurality of cathodes being rotatable, a first target support section for a respective first sputter target and a first target support section for a respective second sputter target. It has a second target support section.

[0010] The sputter deposition source may be switchable between a first sputter position and second sputter positions. In the first sputter position, first target support sections other than the second target support sections of the plurality of cathodes are directed toward the coating area, and in the second sputter position, the second target support sections other than the first target support sections of the plurality of cathodes are directed toward the coating area. Support sections are directed towards the coating area. Specifically, the plurality of cathodes may be an array of multiple "flip-flop cathodes" configured for position exchange of the first and second sputter targets through rotation.

[0011] Thus, in a first sputter position the substrate may be coated with a first target material from first sputter targets, and in a second sputter position the substrate may be coated with a second target material from second sputter targets.

[0012] According to a further aspect, a deposition apparatus is provided. A deposition apparatus includes a deposition chamber and a sputter deposition source according to any of the embodiments described herein, arranged in the deposition chamber. A coating area for arranging a substrate to be coated is provided on a first side of the sputter deposition source in the deposition chamber.

[0013] According to another aspect, a method of coating a substrate using a sputter deposition source, in particular using a sputter deposition source according to any of the embodiments described herein, is provided. The sputter deposition source includes a plurality of cathodes arranged side by side in an array, each cathode of the plurality of cathodes having a respective first sputter target made of a first target material and a respective second sputter target made of a second target material. equip the target The method includes: arranging a substrate in a coating area of a deposition chamber; at a first sputter position of a sputter deposition source, coating a substrate with a first target material from first sputter targets; switching from the first sputter position to the second sputter position by rotating the plurality of cathodes; and in a second sputter position, coating the substrate or subsequent substrate with a second target material from second sputter targets.

[0014] In some embodiments, a plurality of cathodes may be arranged side by side in a linear array or in a curved array (also referred to herein as a “bow array”). The plurality of cathodes may include 4 or more, 8 or more, 12 or more, or even 16 or more cathodes arranged side by side in an array adjacent to the coating area.

[0015] The sputter deposition source may be configured to coat a large area substrate, particularly a substrate having a surface area to be coated of 1 m ² or greater, particularly 5 m ² or greater, for example a glass substrate. For example, the plurality of cathodes may include eight or more cathodes arranged side by side in an array, and each target supporting section of the plurality of cathodes may be configured to support a sputter target having a surface area of 0.3 m ² or greater.

[0016] According to another aspect, there is provided a substrate made according to any of the coating methods described herein, the substrate comprising a first target material from first sputter targets and a second target material from second sputter targets. are coated

[0017] Embodiments also relate to apparatuses for performing the disclosed methods, and include apparatus parts for performing each described method aspect. These method aspects may be performed by hardware components, by a computer programmed by suitable software, by any combination of the two, or in any other manner. Moreover, embodiments in accordance with the present disclosure also relate to methods for making the described devices and products, and methods of operating the described devices. The described embodiments include method aspects for carrying out all of the functions of the described devices.

[0018] In such a manner that the above-listed features of the present disclosure may be understood in detail, a more detailed description of the present disclosure briefly summarized above may be made with reference to the embodiments. The accompanying drawings relate to embodiments of the present disclosure and are described below. Some embodiments are depicted in the drawings and described in detail in the following description.
1 shows a schematic diagram of a deposition apparatus having a sputter deposition source according to embodiments described herein, the sputter deposition source being in a first sputter position I;
[0020] FIG. 2 shows the deposition apparatus of FIG. 1 with the sputter deposition source in a second sputter position (II);
[0021] FIG. 3 is an enlarged view of one of the cathodes of a sputter deposition source described herein in a first sputter position and in a second sputter position; and
4 is a flow diagram illustrating a method of coating a substrate according to embodiments described herein.

[0023] Reference will now be made in detail to various embodiments of the present disclosure, one or more examples of which are illustrated in the drawings. Each example is provided by way of explanation and is not intended as limitation. For example, features illustrated or described as part of one embodiment may be used on or in conjunction with any other embodiment to yield a still further embodiment. This disclosure is intended to cover such modifications and variations.

[0024] Within the following description of the drawings, like reference numbers indicate like components or like components. In general, only differences for individual embodiments are described. Unless otherwise specified, a description of a part or aspect in one embodiment also applies to a corresponding part or aspect in another embodiment.

[0025] The process of coating a substrate with a material as described herein typically refers to thin film applications. The terms “coating” and “deposition” are used synonymously herein. The coating process used in the embodiments described herein is sputtering.

[0026] The term "substrate", when used herein, should in particular encompass non-flexible substrates, such as glass plates or wafers. The present disclosure is not limited thereto, and the term “substrate” may also encompass flexible substrates such as a web or foil. The substrate may be a large-area substrate, in particular a large-area glass substrate, in particular having a surface area to be coated of 1 m ² or more. In some embodiments, the substrate may be a semiconductor substrate, for example a semiconductor wafer. In particular, the embodiments described herein are applicable to semiconductor applications.

[0027] In some embodiments, the substrate may be static during layer deposition. In other words, the deposition apparatus described herein may be configured to coat a substrate while the substrate remains stationary or essentially stationary. In particular, the deposition apparatus described herein may be configured to coat a non-moving substrate using at least two layers of different materials. However, the embodiments described herein are not limited to static deposition, and some embodiments may also relate to dynamic sputtering.

[0028] Sputtering can be used in the production of displays. For example, sputtering may be used for metallization such as the creation of electrodes or buses. Sputtering can be used for the production of thin film transistors (TFTs), as well as for the production of indium tin oxide (ITO) layers. Sputtering can also be used in the production of thin film solar cells.

[0029] Some of the embodiments described herein may be utilized for coating large area substrates using multiple layers, for example, lithium battery fabrication or electrochromic windows. As an example, a plurality of thin film batteries may be formed on a large area substrate. According to some embodiments, the substrate is a substrate having a substrate surface of greater than 0.5 m ² , eg, GEN 4.5 corresponding to about 0.67 m ² substrates (0.73 m×0.92 m), about 1.4 m ² substrates (1.1 m×1.3 m), GEN 7.5 corresponding to about 4.29 m ² substrates (1.95 m×2.2 m), GEN 8 corresponding to about 5.3 m ² substrates (2.16 m×2.46 m), or It may even be GEN 10 corresponding to about 9.0 m ² substrates (2.88 m×3.13 m). Larger generations such as GEN 11, GEN 12 and/or corresponding substrate areas may similarly be implemented.

[0030] 1 and 2 are schematic diagrams of a deposition apparatus 200 having a sputter deposition source 100 according to embodiments described herein. A sputter deposition source 100 is configured to coat a substrate 10 in a coating region 105 of a deposition chamber 101 . 1 shows the sputter deposition source 100 in a first sputter position (I), and FIG. 2 shows the sputter deposition source 100 in a second sputter position (II).

[0031] The sputter deposition source 100 includes a plurality of cathodes 120 arranged in an array, for example 4 or more cathodes, 8 or more cathodes, 12 or more cathodes, or even 16 or more cathodes. . Each cathode of the plurality of cathodes 120 may be rotatable around an individual rotational axis A. In addition, each cathode of the plurality of cathodes 120 has a first target support section 121 for a respective first sputter target 111 and a second target support section for a respective second sputter target 112 . (122).

[0032] A “target support section” can be understood as a section of a cathode configured to support or hold a sputter target. For example, the sputter target may be fixed to the target support section or otherwise mounted or fastened to the target support section of the cathode, so that the sputter target is positioned with the cathode about its respective axis of rotation A. can be rotated Thus, the sputter target - supported by and in contact with the cathode - can be set to the cathode potential for sputtering from the sputter target. In some embodiments, the target support section includes a flat support area for supporting and mounting a flat sputter target thereon, eg a backing wall or backing plate of a cathode. For example, the target support section may include a metal backing plate configured to mount and hold a sputter target thereon. In some embodiments, a sputter target may be mounted to a target support section of a cathode without a continuous backing wall, for example by mounting the sputter target on attachment points of the target support section, resulting in: The sputter target is connected to a power supply. In particular, the sputter target may be a monolithic target configured to sputter without a backing plate.

[0033] Each of the plurality of cathodes supports at least two separate target support sections: a first target support section 121 for supporting a respective first sputter target 111 and a respective second sputter target 112. It includes a second target support section 122 for Thus, two separate sputter targets made of different target materials may be mounted on each of the plurality of cathodes 120 .

[0034] The sputter deposition source 100 is capable of switching between a first sputter position (I) shown in FIG. 1 and a second sputter position (II) shown in FIG. 2 . In the first sputter position I, the first target support sections 121 but not the second target support sections 122 of the plurality of cathodes 120 are directed towards the coating region 105 . In the second sputter position II, the second target support sections 122 but not the first target support sections 121 of the plurality of cathodes 120 are directed towards the coating region 105 . Thus, in a first sputter position (I), the substrate 10 can be coated by sputtering from first sputter targets directed towards the substrate, and in a second sputter position (II) the substrate is directed towards the substrate. It may be coated by sputtering from directed second sputter targets. When the first sputter targets are made of a first target material and the second sputter targets are made of a second target material different from the first target material, the substrate 10 is subsequently formed in a first sputter position (I) and By switching between the second sputter position (II) it can be coated in the coating area with the first and second target materials. By repeatedly switching between first and second sputter positions, layers having alternating first and second target materials, for example a stack of four or more layers, may be deposited.

[0035] First target support sections 121 (with first sputter targets 111 held on top) and second target support sections 122 (with second sputter target 112 held on top) may swap positions by switching between a first sputter position (I) and a second sputter position (II). Thus, in a first sputter position (I) the substrate may be coated with a first target material from first sputter targets, and in a second sputter position (II) the substrate may be coated with a second target material from second sputter targets. can be coated with

[0036] As depicted in FIG. 1 , in the first sputter position I, the first target support sections 121 and the first sputter targets 111 face toward and into the coating region 105 the substrate ( 10) can be directed towards. As depicted in FIG. 2 , in the second sputter position II, the second target support sections 122 and the second sputter targets 112 face toward and into the coating region 105 the substrate ( 10) can be directed towards.

[0037] The sputter deposition source 100 determines the first sputter position (I) by rotation of each of the plurality of cathodes 120 about an individual rotation axis (A), in particular, rotation by an angle of 180°. It can switch between 2 sputter positions (II). In other words, for switching between the first and second sputter positions, each of the plurality of cathodes may be rotated by 180°, so that a respective opposite side of each of the cathodes is coated in the coating area 105 ) is directed towards Cathodes may also be referred to herein as “flip-flop cathodes” because rotation of the cathodes results in a change in the set of sputter targets directed towards the coating area.

[0038] There have been previous attempts to use a rotatable cathode with two or more different sputter targets to achieve rapid change of sputter targets. However, such attempts have still been limited to coating relatively small substrates coated by material sputtered from a target held on a single rotatable cathode. However, the layer uniformity obtainable left room for improvement and the rotatable cathode required a lot of space to enable rotation. The present disclosure contemplates another route: according to embodiments described herein, a plurality of “flip-flop cathodes” are arranged side by side in an array, so that many “flip-flop cathodes” have the same coating area. − wherein the substrate can be arranged in each of the first and second sputter positions—is simultaneously directed towards. Thus, a substrate can be coated simultaneously from a plurality of cathodes 120 .

[0039] The lateral dimension (L) of one cathode of the plurality of cathodes may be relatively small, but the width (W) of the overall array may be sufficient to also coat substrates with large widths. Moreover, the small lateral dimension (L) of each cathode facilitates easy and space-saving rotatability of the cathodes for switching between the first sputter position (I) and the second sputter position (II).

[0040] For example, the lateral dimension L of one of the cathodes, which may correspond essentially to the lateral dimension of the first and second target support sections, may be greater than or equal to 10 cm and less than or equal to 50 cm, in particular greater than or equal to 15 cm and less than or equal to 30 cm. . The width W of the array formed by the plurality of cathodes 120 may be 1 m or more and 5 m or less, particularly 1.5 m or more and 3 m or less.

[0041] The gap D between two adjacent cathodes of the array may be, respectively, 10 cm or less. Alternatively or additionally, the gap D between two adjacent cathodes of the array can be, respectively, greater than 1 cm. A small gap can be beneficial to improve the uniformity of the coating because keeping the gaps between adjacent sputter targets small will provide a more uniform sputter target surface. A gap between adjacent cathodes can be beneficial to enable reliable rotatability of the cathodes without the risk of collision between two adjacent cathodes. The distance between the axes of rotation A of two adjacent cathodes may be greater than or equal to 11 cm and/or less than or equal to 60 cm, respectively.

[0042] In some embodiments, many “flip-flop cathodes” are arranged next to each other in an array, eg, 4 or more cathodes, 8 or more cathodes, 12 or more cathodes, or 16 or more cathodes. It can be.

[0043] In some embodiments that can be combined with other embodiments described herein, the array of cathodes can be a linear array. In a linear array, the axes of rotation A of the plurality of cathodes lie essentially in the same plane, as depicted schematically in FIGS. 1 and 2 . Alternatively, the array of cathodes may be a so-called “bow array” in which the connection line between the axes of rotation of the plurality of cathodes will appear slightly curved in the cross-sectional plane of FIG. 1 . In particular, in a bow array, the outermost cathodes of the array can be arranged closer to the substrate than the inner cathodes of the array, which can help improve layer thickness uniformity at the substrate edges.

[0044] According to some embodiments described herein, a large-area substrate is subsequently coated with a different sputter in the same coating area by switching between a first sputter position (I) and a second sputter position (II) of the sputter deposition source. It can be coated with materials. Thus, throughput can be increased because there is no need to move the substrate to another coating area after deposition of the first target material. The sputter deposition source 100 may be suitable for coating very large substrates, since a plurality of cathodes arranged next to each other in an array may have a large width through simultaneous sputtering from the plurality of cathodes 120. This is because it enables uniform coating of substrates.

[0045] In some embodiments, which can be combined with other embodiments described herein, the sputter deposition source 100 includes a plurality of cathodes (cathodes) centered on a respective axis of rotation A, by an angle of about 180°. 120), it is possible to switch between the first sputter position (I) and the second sputter position (II) by rotation of each cathode. For example, each cathode of the plurality of cathodes 120 rotates the first target support section 121 and the second target support section 122 of the respective cathode about a respective axis of rotation A. You can have a drive for

[0046] The plurality of cathodes 120 are arranged such that, in a first sputter position (I), the first target support sections 121 of the plurality of cathodes are arranged side by side in one plane (X), and in a second sputter position (II). ), the second target support sections 122 of the plurality of cathodes 120 may be arranged side by side such that they are arranged side by side in the one plane X. Thus, by switching between the first sputter position (I) and the second sputter position (II), the second sputter targets 112 and the first sputter targets 111 can swap positions, As a result, sputtering can be continuous without significant delay, since new alignments may not be required. Also, in the bow array, switching the sputter position may correspond to exchanging positions of the first sputter targets and the second sputter targets.

[0047] In some embodiments, which may be combined with other embodiments described herein, the first target support sections 121 of the plurality of cathodes have a sputter surface area of at least 0.3 m ² , particularly at least 0.5 m ² of It is configured to support individual first sputter targets 111 having a sputter surface area, more particularly a sputter surface area of at least 1 m ² . Further, the second target support sections 122 of the plurality of cathodes each have a sputter surface area of at least 0.3 m ² , in particular a sputter surface area of at least 0.5 m ² , more specifically a sputter surface area of at least 1 m ² . It may be configured to support the sputter target 112 . This allows coating of large area substrates.

[0048] The first target support sections 121 and the second target support sections 122 of the plurality of cathodes 120 have a vertical dimension of 1 m or more, particularly 2 m or more, or even 4 m or more (i.e., in FIG. 1 ). dimension in a direction perpendicular to the paper plane). In some embodiments, the first target support sections 121 and the second target support sections 122 of the plurality of cathodes 120 have a lateral dimension L of greater than or equal to 10 cm and less than or equal to 40 cm (ie , dimensions in the left-right direction in FIG. 1).

[0049] In some embodiments, which may be combined with other embodiments described herein, the first target support sections 121 of the plurality of cathodes 120 are at least one of flat and rectangular, respectively, the first sputter. The second target support sections 122 of the plurality of cathodes are configured to support an individual second sputter target 122 that is at least one of flat and rectangular.

[0050] In some implementations, the first sputter targets can be made of a first metal and the second sputter targets can be made of a second metal different from the first metal. The first metal and the second metal may include any metal from the group consisting of aluminum, copper, titanium, molybdenum, silver, or alloys or mixtures thereof.

[0051] The first target support section 121 and the second target support section 122 may be arranged oppositely at each cathode of the plurality of cathodes. In particular, each cathode of the plurality of cathodes 120 may have a first target support section 121 on its first side and a second target support section 122 on its second side opposite the first side. ) can have. Thus, the first target support sections 121 and the second target support sections 122 can swap positions by rotation of each of the cathodes, by 180°. If each cathode includes more than two target support sections for supporting more than two sputter targets, the angle of rotation for switching between two sputter positions depends on the number of sputter targets per cathode. , may be different from 180°, for example, 120° or 90°.

[0052] FIG. 3 shows one cathode 300 of the plurality of cathodes 120 in more detail in a cross-sectional view. It should be understood that each cathode of the plurality of cathodes 120 of the array may be configured in a similar or corresponding manner, and as a result, the following descriptions may also apply to the other cathodes of the array. The left part of FIG. 3 shows the cathode 300 in a first sputter position (I), and the right part of FIG. 3 shows the cathode in a second sputter position (II).

[0053] As depicted in FIG. 3 , the cathode 300 is capable of switching between a first sputter position (I) and a second sputter position (II) by rotation about an axis of rotation (A). In the first sputter position, the first target support section 121 other than the second target support section 122 of the cathode 300 is directed toward the coating region 105, and in the second sputter position, the cathode 300 The second target support section 122 , but not the first target support section 121 , is directed towards the coating area 105 . The first target support section 121 and the second target support section 122 may be provided on both sides of the cathode 300 .

[0054] In some embodiments, which may be combined with other embodiments described herein, a magnetron device 130 is provided at the cathode 300. Sputtering may be performed as magnetron sputtering. The magnetron device 130 may be arranged inside the conductive cathode body 140 of the cathode 300 .

[0055] Magnetron sputtering is particularly advantageous in that the deposition rate can be increased. By arranging the magnetron device 130 behind the target material of the sputter target to trap free electrons in the magnetic field created by the magnetron device 130, these electrons are forced to move within the magnetic field and are able to escape. does not exist. This improves the probability of ionizing gas molecules, typically by several orders of magnitude. This, in turn, significantly increases the deposition rate. A magnetron device 130 may be arranged behind a sputter target to be used for sputtering.

[0056] In the first sputter position (I), the magnetron device 130 can be directed towards the first target support section 121, as a result of which the plasma between the first sputter target 111 and the substrate is drawn in the first sputter position. In (I) it can be influenced by the magnetron device 130. In the second sputter position (II), the magnetron device 130 can be directed towards the second target support section 122, as a result of which the plasma between the second sputter target 112 and the substrate is drawn in the second sputter position. In (II) it can be influenced by the magnetron device 130. A magnetron device “directed towards” a target support section may be understood as a magnetron device arranged to confine a plasma at or in front of, for example, a sputter target supported by said target support section. Specifically, the magnets of the magnetron device may have free ends directed towards the respective target support section.

[0057] Thus, magnetron sputter can be done from a first sputter target at a first sputter position (I) as well as from a second target at a second sputter position (II).

[0058] In the first sputter position (I), the magnetron device 130 is not directed towards the second target support section 122 but may be directed towards the first target support section 121, and in the second sputter position (II) ), the magnetron device 130 may not be directed towards the first target support section 121 but towards the second target support section 122 . The magnetron device 130 can ensure that sputtering is done from a first sputter target 111 at a first sputter position, and sputtering is done from a second sputter target 112 at a second sputter position, This is because the magnetron device confines the plasma at each sputter position in a precise area in front of the individual sputter target. It may not be necessary to disconnect one of the sputter targets from the power supply at each of the sputter positions, since the magnetron device 130 can automatically ensure that sputtering is done on the correct sputter target at each of the sputter positions. because there is

[0059] In some embodiments, the magnetron device 130 may be arranged on the cathode 300, but may be configured not to rotate with the cathode, however. In particular, cathode 300 may be rotatable relative to magnetron device 130 when switching between sputter positions. For example, the magnetron device 130 can be arranged stationary at the cathode, so that the cathode is rotatable while the magnetron device 130 remains stationary.

[0060] In some implementations, only one magnetron device 130 may be arranged in each cathode 300 . The magnetron device may be configured to confine plasma at both sputter positions at an individual sputter target associated with the respective sputter position. The magnetron device 130 may be configured to ensure correct sputter direction at first and second sputter positions by being directed at an individual “active” sputter target at each sputter position.

[0061] In some implementations, the cathode 300 can include a conductive cathode body 140 within which the magnetron device 130 is disposed, and the conductive cathode body 140 is rotatable relative to the magnetron device 130. The conductive cathode body 140 may have a first target support section 121 on its first side and a second target support section 122 on its second side. Thus, the first and second sputter targets can be rotated by rotating the conductive cathode body 140 about the axis of rotation A.

[0062] According to some embodiments, the cathode 300 includes a conductive cathode body 140 , wherein the conductive cathode body 140 includes a first flat wall 141 providing a first target support section 121 ; It has a second flat wall 142 providing two target support sections 122, and two side walls 143 connecting the first flat wall 141 and the second flat wall 142. The second flat wall 142 may be arranged opposite the first flat wall 141 in the conductive cathode body, and the first flat wall 141 and the second flat wall 142 may be arranged parallel to each other; As a result, the first and second sputter targets can be mounted at opposing walls of the conductive cathode body in essentially parallel orientations.

[0063] The two sidewalls 143 can be parallel to each other and/or essentially perpendicular to the first and second flat walls. Thus, the cathode 300 may have a conductive cathode body 140 having a rectangular cross-sectional shape formed by the four walls, in particular an essentially square cross-sectional shape formed by the four walls. This shape of the conductive cathode body 140 facilitates quick and easy rotation of the cathode 300 for switching between the first and second sputter positions.

[0064] In some embodiments, which can be combined with other embodiments described herein, an interior space for a coolant, eg, water, is formed between the first flat wall 141 and the second flat wall of the conductive cathode body 140. (142) is formed between. For example, a space for a refrigerant may be formed between the first flat wall 141 , the second flat wall 142 , and the two side walls 143 . Thus, both the first sputter target 111 and the second sputter target 112 can be cooled through the refrigerant that can flow through the inner space of the cathode 300 .

[0065] In some embodiments, which can be combined with other embodiments described herein, the cathode 300 is configured to power the first sputter target 111 and to power the second sputter target 112. It is connected to the configured power supply unit 150 . In particular, one single power supply may be provided for powering both the first and second sputter targets, in particular through the same electrical connections.

[0066] In some embodiments, power supply 150 is connectable to first sputter target 111 at first sputter position (I) and detachable from second sputter target 112 and at second sputter position (II). It is connectable to the second sputter target 112 and detachable from the first sputter target 111 . For example, a switch may be provided to selectively connect the power supply 150 to a first sputter target and a second sputter target, depending on the individual sputter position.

[0067] In other embodiments, the power supply 150 can be connected to both the first and second sputter targets at the first and second sputter positions. In other words, both the first and second sputter targets may be provided at a cathode voltage in the first sputter position and/or in the second sputter position. The correct sputter direction can be provided automatically by the magnetron device 130, which can only be directed towards the coating area 105 in the first sputter position and in the second sputter position.

[0068] Returning to FIG. 1 , according to a further aspect described herein, subsequent coating of the substrate 10 with two or more layers of different materials in the same coating area without movement of the substrate to another coating area after deposition of the first layer. A deposition apparatus 200 enabling the is described. The deposition apparatus 200 includes a deposition chamber 101 and a sputter deposition source 100 arranged in the deposition chamber 101 . A coating area 105 for arranging the substrate 10 to be coated is provided on the first side of the sputter deposition source 100 . The sputter deposition source 100 is constructed according to any of the embodiments described herein and may include a plurality of flip-flop cathodes arranged side by side in an array.

[0069] The gap (D) between two adjacent cathodes of the array can each be less than or equal to 10 cm, and the width (W) of the entire array can be greater than or equal to 1 m, or even greater than 1.5 m. The sputter deposition source 100 may be configured to coat large area substrates having dimensions of, for example, 1 m or more by 1 m or more.

[0070] In some embodiments, the deposition apparatus may be configured to coat the substrate 10 in an essentially vertical orientation. The angle between the axis of gravity and the major surface of the substrate may be less than 15°, particularly less than 5° during deposition. In particular, the first target support sections 121 and the second target support sections 122 may be configured to support the first sputter targets 111 and the second sputter targets 112 in an essentially vertical orientation. and/or the plurality of cathodes may be rotatable about a respective axis of rotation A extending essentially vertically.

[0071] In some embodiments, the sputter deposition source may be configured for direct current (DC) sputtering.

[0072] According to another aspect described herein, a method of coating a substrate using a sputter deposition source is provided. A sputter deposition source may be configured according to any of the embodiments described herein and includes a plurality of cathodes arranged side by side in an array, each cathode of the plurality of cathodes being a respective first material made of a first target material. 1 sputter target and an individual second sputter target made of a second target material. The first sputter target and the second sputter target may be flat targets.

[0073] The method is illustrated in the flowchart of Figure 4 and is done as follows: First the substrate to be coated is arranged in the coating area of the deposition chamber.

[0074] At box 410, the substrate is coated with a first target material from first sputter targets of the plurality of cathodes while the sputter deposition source is in the first sputter position I.

[0075] At box 420, the sputter deposition source switches from a first sputter position (I) to a second sputter position (II), in particular by rotating the plurality of cathodes by, for example, an angle of 180°.

[0076] In box 430, substrate 10, or a subsequent substrate, is coated with a second target material from second sputter targets in a coating area.

[0077] The first sputter material and the second sputter material may be different metals.

[0078] In some embodiments, the substrate is not moved after coating with the first target materials, but remains in place in the coating area until a second target material is deposited on the substrate.

[0079] In some embodiments, the substrate remains stationary during coating. Specifically, the substrate may be coated by static sputtering, in particular by static DC sputtering.

[0080] The substrate may have an essentially vertical orientation during coating.

[0081] In some implementations, sputtering can be DC sputtering.

[0082] The substrate may be a large area substrate. For example, the substrate may have a surface area greater than 1 m ² , in particular greater than 5 m ² .

[0083] The plurality of cathodes may include four or more cathodes arranged in a linear array or in a bow array.

[0084] In some embodiments, switching between the first and second sputter positions in box 420 rotates the plurality of cathodes about their respective axis of rotation A, for example, by an angle of 180°. may include doing In the first sputter position (I), only the first sputter targets can be directed towards the coating area, and in the second sputter position (II), only the second sputter targets can be directed towards the coating area.

[0085] In some embodiments, at least one cathode of the plurality of cathodes has a magnetron device that may be arranged inside a cathode body of the at least one cathode. For switching in box 420, the first sputter target and the second sputter target of at least one cathode are rotated relative to the magnetron device. In particular, the magnetron device can remain stationary during rotation.

[0086] In a first sputter position (I), a first sputter target of at least one cathode of the plurality of cathodes may be powered by one power supply, and in a second sputter position (II), a first sputter target of at least one cathode The second sputter target of can be powered by the same power supply, in particular through the same power connector. Optionally, the sputter direction may be defined by the direction of the magnetron device 130 inside the cathode, while both sputter targets may be energized during sputtering.

[0087] Thus, each cathode of the plurality of cathodes can be powered by one single power supply, as a result of which one set of power supplies can be powered by two sets of sputter targets, namely the first sputter targets and the second. This may be enough to power both of the 2 sputter targets.

[0088] Moreover, each cathode of the plurality of cathodes may have one single magnetron device, as a result of which one set of magnetron devices may be obtained from two sets of sputter targets, namely the first sputter targets and the second. This may be sufficient to enable magnetron sputtering from both sputter targets. Costs can be reduced and a compact and space-saving sputter deposition source can be provided.

[0089] According to embodiments described herein, at least two layers of different materials may be deposited on a substrate by switching between sputter positions of a sputter deposition source. In some embodiments, a multilayer stack comprising more than two layers is deposited on a substrate. A multilayer stack comprising alternating layers of a first target material and a second target material by a sputter deposition source, for example, by switching between a first sputter position (I) and a second sputter position (II) several times. may be deposited on this substrate.

[0090] Sputter targets can be made of or include at least one material selected from the group comprising: aluminum, silicon, tantalum, molybdenum, niobium, titanium, indium, gallium, zinc. , tin, silver and copper. In particular, the target materials may be selected from the group comprising indium, gallium and zinc. Sputter targets may include some or a mixture of the materials mentioned above.

[0091] Although the cathodes described in the above embodiments include two target support sections for two sputter targets, the embodiments of the present disclosure are not limited to this. For example, each cathode may have, for example, three, four or more target support sections for supporting three, four or more sputter targets of different target materials. For example, a sputter support section may be provided at each of the four walls of the conductive cathode body. In the latter case, the sputter deposition source can switch between three, four or more sputter positions by rotation of the cathodes, for example by a respective angle of 360°/n, where n is the number of sputter targets provided at each of the cathodes.

[0092] While the foregoing relates to embodiments of the present disclosure, other and additional embodiments of the present disclosure may be devised without departing from the basic scope of the present disclosure, the scope of which is set forth in the following claims. is determined by

Claims (20)

As a sputter deposition source (100) for coating the substrate (10) in the coating area (105) of the deposition chamber (101),
It includes a plurality of cathodes 120 arranged side by side in an array,
Each cathode of the plurality of cathodes is rotatable, and a first target support section 121 for each first sputter target 111 and a second target support section for each second sputter target 112 ( 122),
A sputter deposition source (100) for coating a substrate (10) in a coating area (105) of a deposition chamber (101). According to claim 1,
In a first sputter position (I), first target support sections (121) other than second target support sections (122) of the plurality of cathodes are directed towards the coating region (105),
In the second sputter position (II), the second target support sections (122) of the plurality of cathodes, but not the first target support sections (121), are directed towards the coating region (105).
A sputter deposition source (100) for coating a substrate (10) in a coating area (105) of a deposition chamber (101). According to claim 2,
The sputter deposition source rotates each cathode of the plurality of cathodes 120 around a respective axis of rotation A by an angle of about 180° to determine the first sputter position I and the sputter deposition source. switchable between a second sputter position (II);
A sputter deposition source (100) for coating a substrate (10) in a coating area (105) of a deposition chamber (101). According to claim 2 or 3,
The plurality of cathodes 120 are arranged such that, in the first sputter position (I), the first target support sections 121 of the plurality of cathodes are arranged side by side in a plane (X), and the second sputter position In (II), the second target support sections 122 of the plurality of cathodes are arranged side by side such that they are arranged side by side in the plane X,
A sputter deposition source (100) for coating a substrate (10) in a coating area (105) of a deposition chamber (101). According to any one of claims 1 to 4,
The plurality of cathodes 120 includes four or more cathodes, and each first target support section 121 of the plurality of cathodes 120 has a sputter surface area of at least 0.3 m ² . configured to support a target, wherein the second target support sections 122 of the plurality of cathodes are configured to support respective second sputter targets having a sputter surface area of at least 0.3 m ² .
A sputter deposition source (100) for coating a substrate (10) in a coating area (105) of a deposition chamber (101). According to any one of claims 1 to 5,
The first target support sections 121 of the plurality of cathodes are configured to support individual first sputter targets 111 that are at least one of flat and rectangular, and the second target support sections of the plurality of cathodes ( 122 is configured to support individual second sputter targets 122 that are at least one of flat and rectangular.
A sputter deposition source (100) for coating a substrate (10) in a coating area (105) of a deposition chamber (101). According to any one of claims 1 to 6,
The first target support section 121 and the second target support section 122 are arranged oppositely at each cathode of the plurality of cathodes 120,
A sputter deposition source (100) for coating a substrate (10) in a coating area (105) of a deposition chamber (101). According to any one of claims 1 to 7,
A magnetron device (130) is provided on at least one cathode of the plurality of cathodes (120), wherein the magnetron device (130), in a first sputter position (I), supports a second target of the at least one cathode. It is directed towards the first target support section 121 rather than towards the section 122 and, in the second sputter position II, is directed towards the first target support section 121 of said at least one cathode. rather than being directed toward the second target support section 122,
A sputter deposition source (100) for coating a substrate (10) in a coating area (105) of a deposition chamber (101). According to any one of claims 1 to 8,
At least one cathode among the plurality of cathodes 120 includes a conductive cathode body 140 in which a magnetron device 130 is arranged, and the conductive cathode body 140 is attached to the magnetron device 130. rotatable with respect to, in particular, the conductive cathode body 140 is rotatable while the magnetron device 130 remains stationary,
A sputter deposition source (100) for coating a substrate (10) in a coating area (105) of a deposition chamber (101). According to any one of claims 1 to 9,
At least one cathode of the plurality of cathodes 120 is connected to one power supply 150 configured to supply power to the respective first sputter targets 111 and the respective second sputter targets 112. connected,
A sputter deposition source (100) for coating a substrate (10) in a coating area (105) of a deposition chamber (101). According to any one of claims 1 to 10,
At least one cathode among the plurality of cathodes 120 includes a conductive cathode body 140,
The conductive cathode body 140 has a first flat wall 141 providing the first target supporting section 121, opposite to the first flat wall and parallel to the first flat wall and supporting the second target. having a second flat wall (142) providing a section (122) and two side walls (143) connecting the first flat wall (141) and the second flat wall (142);
A sputter deposition source (100) for coating a substrate (10) in a coating area (105) of a deposition chamber (101). According to claim 11,
An internal space for a refrigerant is formed between the first flat wall 141, the second flat wall 142, and the two side walls 143,
A sputter deposition source (100) for coating a substrate (10) in a coating area (105) of a deposition chamber (101). According to any one of claims 1 to 12,
The array is a linear array or a bow array, and the gap (D) between two adjacent cathodes of the plurality of cathodes is, respectively, 10 cm or less,
A sputter deposition source (100) for coating a substrate (10) in a coating area (105) of a deposition chamber (101). As the deposition apparatus 200,
deposition chamber 101;
a sputter deposition source (100) according to any one of claims 1 to 13, arranged in said deposition chamber; and
comprising a coating area (105) on a first side of the sputter deposition source (100) for arranging therein a substrate to be coated;
Deposition apparatus 200. A method of coating a substrate (10) using a sputter deposition source including a plurality of cathodes (120) arranged side by side in an array,
Each cathode of the plurality of cathodes (120) has an individual first sputter target (111) made of a first target material and an individual second sputter target (112) made of a second target material,
The method,
arranging the substrate in a coating area of a deposition chamber;
coating the substrate with the first target material from first sputter targets, at a first sputter position (I);
switching from the first sputter position (I) to a second sputter position (II) by rotating the plurality of cathodes; and
coating the substrate or subsequent substrate with the second target material from second sputter targets, in the second sputter position (II);
A method of coating a substrate (10) using a sputter deposition source comprising a plurality of cathodes (120) arranged side by side in an array. According to claim 15,
The plurality of cathodes are arranged between the first sputter position (I) in which the first sputter targets are directed towards the coating area and the second sputter position (II) in which the second sputter targets are directed towards the coating area. rotated by an angle of 180° around the respective axis of rotation A, for switching at
A method of coating a substrate (10) using a sputter deposition source comprising a plurality of cathodes (120) arranged side by side in an array. According to claim 15 or 16,
At least one cathode of the plurality of cathodes includes a magnetron device, and a first sputter target and a second sputter target of the at least one cathode are rotated relative to the magnetron device during switching.
A method of coating a substrate (10) using a sputter deposition source comprising a plurality of cathodes (120) arranged side by side in an array. According to any one of claims 15 to 17,
In the first sputter position (I), a first sputter target of at least one cathode of the plurality of cathodes is powered by one power supply, and in the second sputter position (II), the at least one The second sputter target of the cathode is powered by the one power supply,
A method of coating a substrate (10) using a sputter deposition source comprising a plurality of cathodes (120) arranged side by side in an array. According to any one of claims 15 to 18,
The substrate is a large area substrate,
A method of coating a substrate (10) using a sputter deposition source comprising a plurality of cathodes (120) arranged side by side in an array. According to any one of claims 15 to 19,
wherein the substrate has a surface area of at least 1 m ² and the plurality of cathodes comprises at least four cathodes arranged in a linear array or a bow array.
A method of coating a substrate (10) using a sputter deposition source comprising a plurality of cathodes (120) arranged side by side in an array.

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