JPH1192927A - Magnetron sputtering device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a magnetron sputtering device in which magnet is improved and capable of forming uniform coating on the whole face of a substrate even to a large-sized substrate. SOLUTION: This magnetron sputtering device is the one provided with a vacuum vessel in which a substrate on which thin coating is to be formed and a sputtering target to form a thin coating material are arranged, a magnet 6 forming the magnetic field on the surface of the sputtering target and an electric power feeding means feeding electric power to the sputtering target and generating discharge plasma, and colliding ions in the generated discharge plasma against the target to release sputtering particles and depositing the sputtering particles on the substrate to form thin coating. In this case, the magnet 6 is composed in such a manner that, among magnetic flux density formed on the surface of the sputtering target, the difference between the minimum value and the maximum value of the components parallel to the surface of the sputtering target on a locus in which the components vertical to the surface of the sputtering target are made zero is regulated to double or above.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetron sputtering apparatus, and more particularly to a magnetron sputtering apparatus capable of forming a thin film having a uniform film thickness and quality on a surface of a large-area thin film forming substrate by a sputtering method. The present invention relates to a magnetron sputtering apparatus.

[0002]

2. Description of the Related Art In general, a liquid crystal display device is used for a display unit of a notebook personal computer or the like. In recent years, a large display surface of the liquid crystal display device has been required. The size of the display surface is 10
Over 12 inches and over 12 inches are becoming mainstream. The liquid crystal display device has two glass plates (substrates)
It has a structure in which a liquid crystal layer that provides an electrical response is sandwiched between the electrodes, and it is necessary to form electrodes and elements for applying a voltage to the liquid crystal layer on the surface of the glass plate.

In the manufacturing process of a liquid crystal display device, in order to increase the production amount of the liquid crystal display device, a glass substrate having a size several times the size of the display surface required for the liquid crystal display device is used. It is customary practice to form electrodes and elements, and then divide the glass substrate into required sizes to obtain a plurality of liquid crystal display devices. In this case, since the size of the display surface of one liquid crystal display device is increased, the size of the glass substrate is inevitably increased.

Incidentally, as a glass substrate processing apparatus for forming electrodes and elements for applying a voltage to a liquid crystal layer on the surface of a glass substrate, a sputtering apparatus, a CVD (chemical vapor deposition) apparatus, an etching apparatus and the like are usually used. used. The sputtering apparatus therein is used for forming thin-film electrodes such as metal wiring and transparent electrodes for pixels. In this case, an aluminum alloy, chromium, or the like is often used as a forming material for the metal wiring, and ITO (Ind) is used as the forming material for the transparent electrode.
Indium oxide to which tin is added, which is called ium tin oxide), is used. When forming a thin film electrode, it is necessary to form a film so that its film thickness and electric resistance become uniform. The reason is to make fine processing such as etching uniform and to improve the display performance of the liquid crystal display device.

Here, it is known that there are roughly two types of sputtering apparatuses for manufacturing a liquid crystal display device. One of the methods is a transfer film forming type sputtering apparatus in which electrodes and magnetic poles are fixed and a glass substrate is transferred to the electrodes and magnetic poles to form a film on a glass substrate. One type is a stationary facing film-forming type sputtering apparatus in which a glass substrate is fixed and a magnetic pole is conveyed to the glass substrate to form a film on a glass substrate in a stationary state. In this case, any of the sputtering apparatuses is a film forming method capable of forming a uniform film on a large-sized glass substrate.

[0006] The transport film forming type sputtering apparatus has the advantages that high uniformity of film formation is obtained and one sputtering apparatus can cope with glass substrates of various sizes. It has drawbacks such as limitations and the need for a tray for transporting glass substrates. On the other hand, a stationary facing film forming type sputtering apparatus has advantages such as a large degree of freedom in the layout of the sputtering apparatus and a need for a tray for transporting the glass substrate. Indeed, it has a drawback that it is difficult to ensure uniformity of film formation.

[0007] As such a stationary facing film forming type sputtering apparatus, one disclosed in, for example, Japanese Patent Application Laid-Open No. Sho 60-114568 is known as one having a typical basic configuration.
This stationary facing film forming type sputtering apparatus uses a magnet (permanent magnet) arranged and arranged in a rectangular shape as a magnetic field forming means.
Is used.

FIG. 6 is a perspective view showing an example of the configuration of such a magnet arranged and arranged in a known rectangular shape.

[0009] As shown in FIG.
Is a prism-shaped inner magnet 61 and an inner magnet 6
1 includes a frame-shaped external magnet 62 disposed so as to cover the periphery thereof along the longitudinal direction thereof, and a rectangular plate-shaped magnetic yoke 63 that covers the back portions of the inner magnet 61 and the outer magnet 62. The outer magnet 62 is arranged so that the distance between the outer magnet 62 and the outer magnet 62 is constant regardless of the location.

The inner magnet 61 has its upper end magnetized to an N-pole and its lower end magnetized to an S-pole. The parts are respectively magnetized to the N pole.

During operation of the stationary facing film forming type sputtering apparatus,
The magnet 60 is used by being moved linearly along a fixedly arranged sputtering target. However, since the glass substrate on which the film is formed, that is, the display surface of the liquid crystal display device is generally rectangular, However, even if such a magnet 60 arranged in a rectangular shape is used, no inconvenience occurs.

[0012]

In the known stationary facing film forming type sputtering apparatus, a sputtering target to which an AC voltage or a DC voltage is applied and a glass substrate made of an insulating material are arranged in a stationary state to face each other. In such a case, since the anode that absorbs the secondary electrons generated from the sputtering target is only arranged around the glass substrate, the secondary electrons emitted from the central portion of the sputtering target and the peripheral portion of the sputtering target The distance to the anode, that is, the traveling distance of the secondary electrons, differs from the secondary electrons emitted from the secondary electron.

By the way, since plasma discharge is generated by collision of an inert gas such as argon with secondary electrons, there is a close relationship between the traveling distance of secondary electrons and the plasma discharge density. According to experiments by the present inventors, it has been found that the plasma discharge density in the peripheral portion of the sputtering target is generally higher than the plasma discharge density in the central portion of the sputtering target.

As described above, in the known stationary facing film forming type sputtering apparatus, a partial difference is generated in the plasma discharge density. As the size of the glass substrate increases, the partial difference in the plasma discharge density becomes remarkable. And as a result,
There is a problem that a film having a uniform thickness cannot be formed over the entire surface of the glass substrate.

As means for eliminating such a problem,
For example, a magnetron sputtering apparatus disclosed in JP-A-7-233473 has already been proposed. JP-A-7-23
The magnetron sputtering apparatus disclosed in Japanese Patent No. 3473 discloses a method in which a notch is formed at an end portion of a magnet (permanent magnet) serving as a magnetic field forming means so as to weaken the magnetic field in a portion where the plasma discharge density is increased, thereby reducing the plasma discharge density. Is to minimize the difference.

The magnetron sputtering apparatus disclosed in Japanese Patent Application Laid-Open No. 7-233473 is capable of reducing the partial difference in plasma discharge density as much as possible. In recent years, when one side of a glass substrate is enlarged to about 1 m as in recent years, it is difficult to eliminate a partial difference in plasma discharge density as much as possible, There is a problem that a film having a uniform film thickness cannot be formed.

The present invention solves these problems, and its object is to improve the magnetic field forming means,
An object of the present invention is to provide a magnetron sputtering apparatus capable of forming a film having a uniform thickness over the entire surface of a substrate even when the size of the substrate is increased.

[0018]

To achieve the above object, a magnetron sputtering apparatus according to the present invention comprises a thin film forming substrate, a sputtering target, a magnetic field forming means for forming a magnetic field on the sputtering target, and a power supply means for the sputtering target. The magnetic field forming means, the difference between the minimum value and the maximum value of the component parallel to the sputtering target surface on the locus where the component perpendicular to the sputtering target surface becomes zero in the magnetic flux density formed on the sputtering target surface Is at least 2
A means configured to be doubled.

Here, a specific configuration of the magnetic field forming means is a magnet (permanent magnet) arranged and arranged in a rectangular shape.
In the case of using, a magnet consisting of a plurality of magnetic materials with different thicknesses attached stepwise in the longitudinal direction, a magnet consisting of a plurality of magnets whose sectional area changes stepwise in the longitudinal direction, a longitudinal direction A magnet composed of a plurality of magnets having different residual magnetic flux densities in stages is used.

According to the above-mentioned means, the central portion in the longitudinal direction of the rectangular magnet has a long distance to the anode, but has a strong magnetic field, while the longitudinal end portion of the magnet extends to the anode. However, since the magnetic field is weakened, the plasma discharge density in the racetrack plasma discharge space becomes almost uniform, and the ion density for sputtering the sputtering target becomes almost constant over the entire surface of the sputtering target.

[0021]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS In an embodiment of the present invention, a magnetron sputtering apparatus forms a magnetic field on a surface of a sputtering target, and a vacuum vessel in which a substrate for forming a thin film and a sputtering target as a thin film material are disposed. A magnetic field forming unit and a power supply unit that supplies power to the sputtering target and generates a discharge plasma, colliding ions in the generated discharge plasma with the target to discharge sputtering particles, and deposit the sputtering particles on the substrate The magnetic field forming means is formed in a magnetic flux density formed on the surface of the sputtering target, the component being perpendicular to the surface of the sputtering target on a trajectory where the component perpendicular to the surface of the sputtering target becomes zero. If the difference between the minimum and maximum values of the components is small Those that are configured to be doubled.

In an optimal example of the embodiment of the present invention, the magnetron sputtering apparatus controls the magnetic field forming means so that the difference between the minimum value and the maximum value of the component parallel to the surface of the sputtering target is 2 times or more and 5 times or less. What constitutes.

As a specific example of the embodiment of the present invention, the magnetron sputtering apparatus has a configuration in which the magnetic field forming means can be moved with respect to the sputtering target.

In each of the embodiments of the present invention,
The magnetron sputtering apparatus uses a magnetic field forming means in a magnetic flux density formed on a sputtering target surface,
The trajectory where the component perpendicular to the surface of the sputtering target becomes zero is formed so as to have a rectangular shape with rounded corners.

As one specific example of the magnetic field forming means in the embodiment of the present invention, the magnetic field forming means is composed of a magnet arranged and arranged in a rectangular shape, and the magnets have different thicknesses in the longitudinal direction. A plurality of magnetic materials are attached.

As another specific example of the magnetic field forming means in the embodiment of the present invention, the magnetic field forming means is composed of a magnet arranged and arranged in a rectangular shape, and the magnet has a sectional area which changes stepwise in the longitudinal direction. It consists of multiple magnets.

As still another specific example of the magnetic field forming means according to the embodiment of the present invention, the magnetic field forming means is composed of a magnet arranged and arranged in a rectangular shape, and the magnet gradually reduces the residual magnetic flux density in the longitudinal direction. It consists of a plurality of different magnets.

According to these embodiments of the present invention, the magnetic field forming means is provided so that the component perpendicular to the surface of the sputtering target becomes zero in the magnetic flux density formed on the surface of the sputtering target. Since the difference between the minimum value and the maximum value of the component parallel to is configured to be at least twice, the central portion of the magnetic field forming means has a longer distance to the anode, but the magnetic field becomes stronger. On the other hand, at the end of the magnetic field forming means, the distance to the anode is short, but the magnetic field is weak. As a result, the plasma discharge density in the race track plasma discharge space in the magnetic field forming means became substantially uniform overall, and the plasma discharge density became substantially uniform overall. Becomes almost constant over the entire surface of the sputtering target, and as a result,
Even when a large-sized substrate is used, the film thickness distribution and film quality distribution of the film formed by sputtering on the substrate can be made uniform, and a uniform thin film is deposited on the large-sized substrate. be able to.

[0029]

Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 is a perspective view showing a configuration of an embodiment of a magnetron sputtering apparatus according to the present invention and having a partially developed portion.

In FIG. 1, 1 is a vacuum vessel, 2 is a glass substrate, 2a is a substrate mounting surface, 3 is a sputtering target, 4 is an anode (power supply means), 5 is a mask member,
6 is a magnet (permanent magnet, magnetic field forming means), 7 is a back plate, 8 is a magnet swing mechanism, and 9 is a plasma discharge region.

The magnetron sputtering apparatus according to the present embodiment has a vacuum vessel 1 whose inside is evacuated to a vacuum state during use, and a glass substrate placed on a substrate placing surface 2a placed in the vacuum vessel 1. 2, a sputtering target 3 in the upper wall of the vacuum vessel 1 and opposed to the glass substrate 2 in a spaced state, and a sputtering target 3 in the vacuum vessel 1,
An anode 4 having a U-shaped cross section disposed around the substrate mounting surface 2a; a mask member 5 disposed in the vacuum vessel 1 so as to cover a peripheral portion of the glass substrate 2; A back plate 7 arranged to seal the upper wall of the vacuum vessel 1 and a rectangular shape outside the vacuum vessel 1 and opposed to the sputtering target 3 via the back plate 7. Magnet 6 placed
And a magnet swing mechanism 8 that swings the magnet 6 on the back plate 7 in the direction of the arrow l shown in FIG.

In the above configuration, after the glass substrate 2 is mounted on the substrate mounting surface 2a and the inside of the vacuum vessel 1 is evacuated, a DC voltage or an AC voltage having a predetermined voltage value is applied to the anode. Plasma discharge occurs in the plasma discharge region 9 on the surface of the sputtering target 3. At this time, the ions generated by the plasma discharge collide with the surface of the sputtering target 3 to generate sputtered particles from the sputtering target 3, and the generated sputtered particles are deposited on a predetermined location on the glass substrate, and A thin film is formed on the substrate.

During a series of thin film forming operations in the magnetron sputtering apparatus, the magnet 6 swings in the arrow direction l with respect to the fixed sputtering target 3 by the swing function of the magnet swing mechanism 8, A magnetic field is formed on the surface of the substrate 3 to generate a plasma discharge in the plasma discharge region 9.

In this case, the magnet 6 is used as shown in FIG.
5 to the first example to the third example as shown in FIG. 5. By adopting these configurations, the magnetic flux density at the center portion is increased and the magnetic flux densities at both end portions are reduced. A thin film having a uniform thickness and quality is formed on the entire surface of the glass substrate 2.

Here, FIG. 2A is a perspective view showing a configuration of a magnet of a first example used in the magnetron sputtering apparatus shown in FIG. 1, and FIG. 2B is a perspective view of the magnet of the first example. Locus of the magnet where the magnetic flux density component perpendicular to the surface of the sputtering target 3 becomes zero (dotted line portion)
FIG.

[0037] FIG. 2 (a), the (b), the inner magnet 10, 11 the outer magnet 12 the magnetic yoke, 13 ₁ the first magnetic material, 13 ₂ a second magnetic material, in other The same components as those in FIG. 1 are denoted by the same reference numerals.

As shown in FIG. 2A, the magnet 6 of the first example has a prism-shaped inner magnet 10 and a frame arranged so as to cover the entire circumference of the inner magnet 10 along the longitudinal direction of the inner magnet 10. The outer magnet 11 having a rectangular shape, a rectangular plate-shaped magnetic yoke 12 covering the inner magnet 10 and the back surface of the outer magnet 11, and affixed to opposing portions of the inner magnet 10 and the outer magnet 11 at both ends of the magnet 6. and a relatively thick first magnetic material 13 ₁ in the thickness, the inner magnet 10 and adhered to the thickness portion facing the outer magnet 11 relatively thin second in the inboard portion that follows the end portions of the magnet 6 has become a magnetic material 13 ₂ which, when excluding the first magnetic member 13 ₁ and the second magnetic member 13 _2, the distance between the inner magnet 10 and outer magnet 11, applied to the location It is arranged to be constant.

The upper end of the inner magnet 10 is magnetized to the N pole, and the lower end, that is, the side in contact with the magnetic yoke 12 is magnetized to the S pole. The outer magnet 11 is opposed to the inner magnet 10 at the upper end. The side is magnetized to the south pole and the lower end side is magnetized to the north pole.

According to the magnet 6 of the first example according to the configuration, the magnetic flux formed between the inner magnet 10 and outer magnet 11 includes a first magnetic member 13 ₁ is attached to the inner magnet 10 first 2 magnetic material 13 ₂ and the first magnetic material 13 ₁ is stuck to the outer magnet 11 to be pulled a second respective magnetic member 13 _2. In this case, both end portions of the magnet 6, the inner magnet 10 and outer magnet 11, relatively since the thickness of the thick first magnetic member 13 ₁ is attached, retraction of many magnetic flux in the first magnetic material 13 ₁ On the other hand, the portion near the center following both ends of the magnet 6 is the inner magnet 10 and the outer magnet 1.
Since the second magnetic material 13 ₂ having a relatively small thickness is attached to the first magnetic material 13 ₁ , a smaller amount of magnetic flux is drawn into the second magnetic material 13 _{2 than} in the first magnetic material 131, and the magnet 6
The central part of the inner magnet 10 and the outer magnet 1
1, no magnetic material is stuck, so no magnetic flux is drawn.

As described above, in the magnet 6 of the first example, since a large amount of magnetic flux is drawn in at both ends, the magnetic flux density at both ends is relatively small, and the magnetic flux density at the center portion following both ends is small. Since the magnetic flux is drawn in, the magnetic flux density in the portion near the center is higher than that in both ends, and further, since the magnetic flux is not drawn in the central portion, the magnetic flux density in the central portion becomes relatively large. The magnitude of the magnetic flux density of the magnetic field obtained by
Both ends <central portion following both ends <center.

Then, when the locus of the position where the component perpendicular to the surface of the sputtering target 3 becomes zero among the magnetic flux densities obtained by the magnet 6 of the first example is obtained, as shown by the dotted line in FIG. , Race track shape.

FIG. 3 shows a magnetic flux density component parallel to the surface of the sputtering target 3 on a locus (dotted line) where the magnetic flux density component perpendicular to the surface of the sputtering target 3 becomes zero in the magnet 6 of the first example. FIG. 4 is a characteristic diagram showing an example of the size of the graph.

In FIG. 3, the vertical axis is the magnetic flux density expressed in Tesla, the horizontal axis is the position on the dotted line, points A and C indicate both ends of the magnet 6, and point B is the center of the magnet 6. Indicates a part.

As shown in the characteristic diagram of FIG. 3, the magnet 6 of the first example has a magnetic flux density (minimum value) parallel to the surface of the sputtering target 3 at both ends (points A and C).
Is 0.02 Tesla, whereas the magnetic flux density (maximum value) parallel to the surface of the sputtering target 3 at the center (point B) is 0.044 Tesla, which is more than twice as large as that at both ends. Magnetic flux density.

Next, FIG. 4 is a perspective view showing the configuration of a second example of the magnet used in the magnetron sputtering apparatus shown in FIG.

As shown in FIG. 4, the magnet 6 of the second example has a prismatic inner magnet 10 'and a frame-like magnet arranged so as to cover the entire circumference of the inner magnet 10' along the longitudinal direction. , And a rectangular plate-shaped magnetic yoke 12 ′ that covers the back surface of the inner magnet 10 ′ and the outer magnet 11 ′. And
Inner magnet 10 ', the largest remaining first inner magnet 14 ₁ having a magnetic flux density, two second having a residual magnetic flux density of the magnitude second only to the first inner magnet 14 ₁
An inner magnet 14 _2, two and a third assembly of the inner magnet 14 ₃ with the smallest residual magnetic flux density, the third inner magnet 14 ₃ are disposed at both ends, a first inner magnet to the central part 14 ₁ Is placed,
A second inner magnet 14 is provided between both ends and the center.
₂ is arranged. Also, outer magnet 1
1 'includes a first outer magnet 15 ₁ having the largest residual magnetic flux density, two second outer magnet having a residual magnetic flux density of the size next to the first outer magnet 15 ₁ 1
And 5 _2, the smallest residual two and a third outer magnet 15 ₃ of the set having a magnetic flux density, is arranged a third outer magnet 15 ₃ at both ends, first in the central portion
Outer magnet 15 ₁ is disposed a second outer magnet 15 ₂ each having the arrangement configurations between the end portions and the central portion.

In this case, each inner magnet 14 ₁ , 14
_2, 14 _3, the case where the inner magnet 10 ', the upper end of all N poles are magnetized respectively on the lower end are all S poles, the outer magnet 15 _1, 15 _2, 15
₃ , when the outer magnet 11 'is formed opposite to the inner magnet 10', the upper end is magnetized to the S pole and the lower end is magnetized to the N pole.

According to the magnet 6 of the second example having the above-described structure, the magnetic flux formed between the inner magnet 10 'and the outer magnet 11' is changed to the inner magnets 14 ₁ , 14 ₂ , 14 _{3 at the} respective positions. And outer magnet 1
5 _1, 15 _2, 15 become dependent on the magnitude of the residual magnetic flux density of _3. That is, the magnet 6, from the smallest residual magnetic flux density at both end portions in the longitudinal direction (e.g., 0.07 Tesla) inner magnet 14 ₁ and the outer magnet 15 ₁ having been located, the magnetic flux density of both ends relatively small and, since the intermediate residual magnetic flux density (e.g., 0.09 Tesla) inner magnet 14 ₂ and the outer magnet 15 ₂ having a are arranged near the center of the portion that follows the end portions, the central the magnetic flux density of the portion of the deviation is greater than the magnetic flux density at both ends, and further, the largest residual magnetic flux density in the central portion (e.g., 0.11 Tesla) inner magnet 14 ₃ and the outer magnet 15 ₃ having been arranged Therefore, the magnetic flux density at both ends is relatively large, and the magnitude of the magnetic flux density of the magnetic field obtained by the magnet 6 is smaller than both ends < Deviation of part <
It looks like the middle part.

Also in the magnet 6 of the second example, of the magnetic flux density obtained by the magnet 6, the locus in which the component perpendicular to the surface of the sputtering target 3 becomes zero is as follows:
The shape of the magnetic flux density component parallel to the surface of the sputtering target 3 on the dotted line is substantially the same as the shape of the race track shown by the dotted line in FIG. The magnetic flux density (maximum value) parallel to the surface of the sputtering target 3 at the center (point B) of the magnet 6 is the magnetic flux density (minimum) parallel to the surface of the sputtering target 3 at both ends (points A and C). Value).

FIG. 5 is a perspective view showing the structure of a third example of the magnet used in the magnetron sputtering apparatus shown in FIG.

As shown in FIG. 4, the magnet 6 of the third example has a prismatic inner magnet 10 ″ and a frame-shaped magnet arranged so as to cover the entire circumference along the longitudinal direction of the inner magnet 10 ″. , And a rectangular plate-shaped magnetic yoke 12 ″ that covers the back surface of the inner magnet 10 ″ and the outer magnet 11 ″. And
Inner magnet 10 ", a first inner magnet 16 ₁ having the widest width, two second inner magnet 16 having a large width in which the first second to the inner magnet 16 _1
2, consists of the narrowest width with two third assembly of the inner magnet 16 _3, is disposed a third inner magnet 16 ₃ at both ends, the first inner magnet 16 ₁ is arranged at the center, It has a structure _{in which 2} second inner magnets 16 are provided between the end portions and the central portion. The outer magnet 11 ″ includes a first outer magnet 17 ₁ having the widest width and a first outer magnet 17 _1.
Two second outer magnets 17 having the second largest width next to
_2, consists of the narrowest width two having a third set of outer magnet 17 _3, is arranged a third outer magnet 17 ₃ at both ends, the first outer magnet 17 ₁ is disposed in a central portion, ₂ second outer magnet 17, respectively between the ends and the central portion has a deployed configuration. Further, each inner magnet 16 _1, 16 _2, 16 ₃ and the outer magnet 17 _1, 17 _2, 17 ₃ is that all have the same residual magnetic flux density.

In this case, each inner magnet 16 ₁ , 16
₂ and 16 ₃ , when the inner magnet 10 ″ is formed, the upper end is magnetized to the N pole and the lower end is magnetized to the S pole, and the outer magnets 17 ₁ , 17 ₂ , 17 are respectively magnetized.
₃ , when the outer magnet 11 "is formed as opposed to the inner magnet 10", the upper end is magnetized to the S pole and the lower end is magnetized to the N pole.

According to the magnet 6 of the third example having the above structure, the magnetic flux formed between the inner magnet 10 "and the outer magnet 11" is reduced by the inner magnets 16 ₁ , 16 ₂ , 16 _{3 at the} respective positions. And outer magnet 1
7 _1, 17 _2, it becomes dependent on 17 the _third width. That is, the magnet 6, since the inner magnet 16 ₁ and the outer magnet 17 ₁ having the narrowest width on the both end portions are arranged, the magnetic flux density at both ends is relatively small,
The inner magnet 16 having an intermediate wide width toward the center of the portion that follows the end portions ₂ and outer magnet 17
_{Since 2} is located, the magnetic flux density of the portion of the inboard is greater than the magnetic flux density at both ends, and further, the inner magnet 16 ₃ and outer magnet 17 ₃ having the widest width in the central portion is arranged Therefore, the magnetic flux densities at both ends are relatively large, and the magnitude of the magnetic flux density of the magnetic field obtained by the magnet 6 is as follows: both ends <central portion following both ends <central portion.

Also in the magnet 6 of the third example, of the magnetic flux density obtained by the magnet 6, the locus in which the component perpendicular to the surface of the sputtering target 3 becomes zero is as follows:
The shape of the magnetic flux density component parallel to the surface of the sputtering target 3 on the dotted line is substantially the same as the shape of the race track shown by the dotted line in FIG. The magnetic flux density (maximum value) parallel to the surface of the sputtering target 3 at the center (point B) of the magnet 6 is the magnetic flux density (minimum) parallel to the surface of the sputtering target 3 at both ends (points A and C). Value).

Here, the first and second magnetic materials 13 ₁ , 13 _1
2 , a magnet 6 of a first example composed of a silicon steel sheet, a sputtering target 3 made of chromium, and 800 mm ×
Using a magnetron sputtering apparatus having a substrate mounting surface 2a of 1000 mm, four glass substrates 2 each having a length of 400 mm, a width of 500 mm, and a thickness of 0.7 mm are mounted on the substrate mounting surface 2 a as a set of four glass substrates. In this state, the pressure in the vacuum vessel 1 was set to 0.5 Pa, and a sputter power of 17.4 Kw was applied between the sputtering target 3 and the anode 4 to perform plasma discharge for 3 minutes. The film thickness is 300 nm, the film thickness distribution is ± 4.9%, the average sheet resistance is 0.75Ω, and the sheet resistance distribution is ± 8%.
A film having a high uniformity of the film thickness distribution and the film quality distribution could be formed.

Further, as a result of performing the plasma discharge under the same operating conditions and using the same magnetron sputtering apparatus except that the magnet 6 of the second example was used instead of the magnet 6 of the first example, the glass substrate 2 On top, the average film thickness is 3
A film having a thickness of ± 4.1%, an average sheet resistance of 0.75Ω, a sheet resistance distribution of ± 6%, and a uniform film thickness and film quality distribution can be formed. did it.

Further, as a result of performing a plasma discharge under the same operating conditions and using the same magnetron sputtering apparatus except that the magnet 6 of the third example was used in place of the magnet 6 of the first example, the glass substrate 2 Above, the average film thickness is 300 nm, the film thickness distribution is ± 4.2%, the average sheet resistance value is 0.75Ω, and the sheet resistance distribution is ± 7%. Deposition could be performed.

By the way, except that a known magnet was used in place of the magnet 6 of the first example, a plasma discharge was performed under the same operating conditions using a magnetron sputtering apparatus having the same configuration. Average film thickness is 3
The magnet 6 of each of the first to third examples is a film having a thickness of ± 7%, an average sheet resistance of 0.75Ω, and a sheet resistance of ± 12%. It is clear that the magnetron sputtering apparatus of the present embodiment using the above method can obtain a film having excellent uniformity of the film thickness distribution and the film quality distribution.

The magnets 6 of the first to third examples
Is configured such that the magnetic flux density (maximum value) parallel to the surface of the sputtering target 3 at the center of the magnet 6 is at least twice the magnetic flux density (minimum value) parallel to the surface of the sputtering target 3 at both ends. However, if the maximum value of the magnetic flux density is less than twice the minimum value of the magnetic flux density, it becomes difficult to obtain the uniformity of the sheet resistance distribution indicating the film quality. It is necessary to make the configuration such that it becomes twice or more the minimum value of the magnetic flux density. Also, if the maximum value of the magnetic flux density is twice or more the minimum value of the magnetic flux density, the difference may be large, but in consideration of the practical point and the difficulty of the configuration, It is preferably at least 2 times and not more than 5 times.

[0061]

As described above, according to the present invention, the component perpendicular to the sputtering target surface in the magnetic flux density formed on the sputtering target surface becomes zero in the magnetic field forming means used in the magnetron sputtering apparatus. The configuration is such that the difference between the minimum value and the maximum value of the component parallel to the surface of the sputtering target on the trajectory is at least twice, and the magnetic field at the central portion of the magnetic field forming means having a long distance to the anode is strengthened. Since the magnetic field at the end portion of the magnetic field forming means having a short distance is weakened, the plasma discharge density in the race track plasma discharge space in the magnetic field forming means becomes substantially uniform overall, thereby sputtering the sputtering target. The ion density is almost constant over the entire surface of the sputtering target, As a result, even when a large-sized substrate is used, the film thickness distribution and film quality distribution of a film formed by sputtering on the substrate can be made uniform, and the uniformity can be obtained on a large-sized substrate. This has the effect that a thin film can be deposited.

[Brief description of the drawings]

FIG. 1 is a perspective view showing a configuration of an embodiment of a magnetron sputtering apparatus according to the present invention, having a partially developed portion.

FIG. 2 is a perspective view showing a configuration of a magnet of a first example used in the magnetron sputtering apparatus shown in FIG. 1, and a description showing a locus of a position where a magnetic flux density component perpendicular to the surface of a sputtering target becomes zero. FIG.

FIG. 3 is a characteristic diagram showing an example of a magnitude of a magnetic flux density component parallel to the surface of the sputtering target on a locus where the magnetic flux density component perpendicular to the surface of the sputtering target in the magnet of the first example becomes zero.

FIG. 4 is a perspective view showing a configuration of a magnet according to a second example used in the magnetron sputtering apparatus shown in FIG. 1;

FIG. 5 is a perspective view showing a configuration of a third example of a magnet used in the magnetron sputtering apparatus shown in FIG. 1;

FIG. 6 is a perspective view showing an example of a configuration of a magnet used in a known magnetron sputtering apparatus.

DESCRIPTION OF SYMBOLS 1 Vacuum container 2 Glass substrate 2a Substrate mounting surface 3 Sputtering target 4 Anode (power supply means) 5 Mask member 6 Magnet (magnetic field forming means) 7 Back plate 8 Magnet swing mechanism 9 Plasma discharge region 10, 10 ', 10 "inner magnet 11, 11', 11" outer magnet 12, 12 ', 12 "magnetic yoke 13 ₁ first magnetic material 13 ₂ second magnetic material 14 ₁ , 16 ₁ first inner magnet 14 ₂ , 16 ₂ Second inner magnets 14 ₃ , 16 ₃ Third inner magnets 15 ₁ , 17 ₁ First outer magnets 15 ₂ , 17 ₂ Second outer magnets 15 ₃ , 17 ₃ Third outer magnets

Claims (7)

[Claims] A vacuum container in which a substrate for forming a thin film and a sputtering target to be a thin film material are disposed, a magnetic field forming means for forming a magnetic field on the surface of the sputtering target, and power supply to the sputtering target; Power supply means for generating a discharge plasma, and emits sputtering particles by colliding ions in the generated discharge plasma with the target,
In the magnetron sputtering apparatus that deposits the sputtering particles on the substrate to form the thin film, the magnetic field forming unit includes a component perpendicular to the sputtering target surface in a magnetic flux density formed on the sputtering target surface. A magnetron sputtering apparatus, wherein a difference between a minimum value and a maximum value of a component parallel to the surface of the sputtering target on a locus of zero is at least doubled. 2. The magnetic field forming means according to claim 1, wherein a difference between a minimum value and a maximum value of a component parallel to the surface of the sputtering target is 2 times or more and 5 times or less. 3. The magnetron sputtering apparatus according to 1. 3. The magnetron sputtering apparatus according to claim 1, wherein the magnetic field forming means is configured to be movable with respect to the sputtering target. 4. The magnetic field forming means, wherein a locus in which a component perpendicular to the sputtering target surface in the magnetic flux density formed on the sputtering target surface becomes zero has a rectangular shape with rounded corners. 4. The magnetron sputtering apparatus according to claim 1, wherein the magnetron sputtering apparatus is formed as described above. 5. The magnetic field forming means comprises a magnet arranged and arranged in a rectangular shape, wherein the magnet is formed by adhering a plurality of magnetic materials having different thicknesses stepwise in a longitudinal direction. The magnetron sputtering apparatus according to any one of claims 1 to 4, wherein the apparatus is configured. 6. The magnetic field forming means comprises a magnet arranged and arranged in a rectangular shape, wherein the magnet comprises a plurality of magnets whose sectional area changes stepwise in the longitudinal direction. The magnetron sputtering apparatus according to any one of claims 1 to 4. 7. The magnetic field forming means comprises a magnet arranged and arranged in a rectangular shape, wherein the magnet comprises a plurality of magnets having different residual magnetic flux densities stepwise in a longitudinal direction. The magnetron sputtering apparatus according to claim 1, wherein: