JPS6233764A - Sputtering device - Google Patents

Abstract

PURPOSE:To easily form thin films having uniform film quality at a high rate on plural substrates at the same instant by disposing plural cathodes having elliptical or rectangular targets so as to line at a specified angle with the substrates. CONSTITUTION:>=2 Pieces of the magnetron cathodes 4, 4' attached with the targets 2 formed with erosion areas 6 by converging plasmas by the magnetic fields 5 leaking from magnets 3 are formed to the rectangular shape and the plural substrates 1,... are disposed along the major axis thereof in a vacuum treatment chamber. The above-mentioned cathodes 4, 4' are inclined at the specified angle theta with the substrates 1 and are disposed apart at a suitable distance (h) therefrom. Sputtering is executed with the targets as cathode potential in the device constituted in the above-mentioned manner, by which the films are uniformly and simultaneously formed on the above-mentioned plural substrates 1,....

Description

[Detailed Description of the Invention] [Field of Application of the Invention] The present invention relates to a sputtering apparatus equipped with a magnetron type cathode that is capable of high-rate simultaneous film formation of a large number of substrates. Part f relates to a sputtering apparatus suitable for forming a film with uniform film quality and thickness.

[Background of the invention]

Conventionally, this type of device has a 1% opening rate. As described in Japanese Patent No. 76185, in order to obtain a high rate, targets are arranged in a V-shape, and in order to obtain a uniform erosion area, a pair of magnetic poles are opposed to each other. However, although the discharge is performed between targets arranged in a V-shape, no consideration is given to spatial potential or magnetic potential, and the uniformity of discharge between the V-shaped targets is difficult to maintain (
However, it was difficult to obtain a good thickness distribution of the formed film.

Furthermore, there is no mention of the angle of incidence of sputtered atoms on the substrate, and even the placement of the substrate is not considered.
Therefore, it was extremely difficult to form a uniform thin layer on at least two or more substrates.

[Purpose of the invention]

An object of the present invention is to provide a sputtering structure for a sputtering apparatus that can easily form thin films of uniform quality on at least two or more substrates simultaneously at a high rate over a comparatively large area.

[Summary of the invention]

On the other hand, it is well known that thin films formed by sputtering have a columnar structure.Furthermore, the columnar structure changes depending on the angle of incidence of the sputtered material on the substrate.
Changes in membrane quality have also been well documented. Furthermore, the magnetic properties of thin films in particular vary greatly depending on the angle of incidence of the deposited material onto the substrate.

Furthermore, it is well known that in sputtering a single alloy target, the component ratio varies depending on the emission angle of sputtered atoms from the target surface.

For the above reasons, it is difficult to obtain a uniform thin film over a relatively large area +7) by sputtering. Q) In order to eliminate the difficulties, in many cases, a method is used to form a film while moving the substrate in some way, or a convection J null type Ω cathode, which is less difficult, is used.
One substrate is being processed. However, in this case 1
Due to mechanical constraints and simultaneous deposition of multiple films, the target area must become large, making it difficult to construct quantitative equipment. It was not controlled in any way.

In order to eliminate the above-mentioned difficulties, the present invention provides two
By installing two cathodes, using a long target in one direction, arranging multiple substrates in the longitudinal direction, and changing the angle of the target surface in the short direction, the emission angle of sputtered atoms is controlled. By changing the position of the substrate and the substrate, it is possible to control the angle of incidence on the substrate, increase the spackle rate while ensuring a good film distribution, and further improve the uniformity of the film quality between the substrates. This makes it possible to ensure sex.

[Embodiments of the invention]

An embodiment of the present invention will be explained below with reference to FIGS. 1 and 2.

In FIG. 1, a cross section of the sputtering chamber structure is shown, and the second
A longitudinal section is shown in the figure.

In the sputtering chamber, there is an identical magnetron cup.

- Two boards 4 and 4' are installed, and their h and W can be changed with respect to the substrate 1. Furthermore, the angle θ with respect to the substrate
can be changed. Further, as shown in Figure 2, three substrates 1 are installed in the longitudinal direction of the target. In order to increase the stability of the discharge, the cathode 4 uses a magnetron cathode that is less affected by surrounding conditions even when the cathode is moved, and has a magnet 3. 3
Magnetic flux 5 leaking from the magnet onto the target surface in 2
As a result, the plasma on the surface of the target 20 is focused, and an erosion area 6 is formed. Atoms sputtered from the two-dimensional area parallel to the width direction change the film quality between the substrates at both ends and the center substrate, and impair the uniformity of the film thickness distribution. The second rotation area was designed to be smaller than the overall size and to be separated from the board position to reduce the impact.

The target used was 81 inch NL-19 inch Fe thickness 1
Using one sample, a magnetic thin film with a small coercive force was formed.

In the case of magnetic thin films, the leakage magnetic flux of the magnetron cathode disturbs the magnetic field distribution on the substrate surface and adversely affects the formed film.
In order to avoid this influence, L was set. Next, θ was set so as to increase the sputtering rate within a range where the film thickness distribution did not deteriorate and the discharge did not become unstable. Next, while aiming for the uniformity and optimization of the magnetic properties within the substrate plane, we repeated the three or more operations that determined W, and tried to optimize "l wlθ," and found that h 212 cm , w = g1
5 cm, and θ=2.

Film thickness distribution, thickness of 3 substrates within ±3 yen, sputtering rate 1t 80
0 A/rm, step coverage 0.85~0
．． 87° A good magnetic thin film with small variations in composition, within measurement errors, within the plane of the substrate, and between substrates was obtained. [Effects of the Invention] According to the present invention, as in the embodiment, Not only can the in-plane film thickness distribution be controlled and the sputtering rate increased (it is clear that the target emission angle of sputtered atoms and the substrate incidence angle can also be controlled. .

Because the substrates are arranged side by side, the uniformity of the film quality between the substrates is not only particularly excellent, but it is clear that simultaneous processing of two or more substrates can be easily realized by increasing the length of the target in the longitudinal direction. .

Furthermore, it should be understood that not only a magnetron cathode but also a gun type cathode, such as a trimag type cathode, may be used as the cathode type.

[Brief explanation of the drawing]

FIG. 1 is a side view of a target in an embodiment of the present invention in the lateral direction, and FIG. 2m is a side view of the target in the longitudinal direction. 1... Board 2... Target 4...
・Magnetron cathode 5...Macnet leakage magnetic field 6...Eroge area

Claims (1)

[Claims] 1. In an apparatus that performs film formation by sputtering by installing a target at a cathode potential and a substrate to be deposited in a vacuum processing chamber, installing two or more cathodes having targets,
A sputtering apparatus characterized in that the cathode has an oval or rectangular shape and is arranged at a predetermined angle with respect to the substrate to be adhered, so that a film can be uniformly applied to a plurality of substrates to be adhered to.