JP2004022398A - Manufacturing method of organic electroluminescence - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method and a device of an organic electroluminescence element wherein the invasion of moisture, oxygen or the like from the outside can be prevented by forming a protective film by a sputtering method which can reduce plasma damages. <P>SOLUTION: In this organic electroluminescence element manufacturing method, the protective film is formed by using the sputtering method for applying alternating currents to two targets. Furthermore, the organic electroluminescence element manufacturing device is arranged by forming an angle of 30 to 70 ° relative to the upper face of the organic electroluminescence element in which a protective layer should be formed on the upper part, and has a sputtering device provided with two targets of a protective layer constituent material impressed with alternating current power, respectively. <P>COPYRIGHT: (C)2004,JPO

Description

【００４１】
表１において、比較例に示したようにターゲット取付け角度が０度のときはフラットバンドシフトがほとんどないが、成膜速度が非常に遅く、実用的でない。一方、角度が９０度のときは成膜速度は非常に速いが、フラットバンドシフトが非常に大きく、やはり実用的ではない。これに対して実施例に示すように、ターゲット取付け角度が３０〜７０度のときにフラットバンドシフトが小さく、かつ成膜速度も速いことがわかる。
【００４２】
図３は、図２に示す装置においてターゲット取付け角度を一定にして各ターゲット１５、１６と基板１４との間の距離を種々変えた時のダメージ評価の例を示すグラフである。また図４は各ターゲット１５、１６と基板１４との間の距離を一定にしてターゲット取付け角度を種々変えた時のダメージ評価の例を示すグラフである。これらのグラフから各ターゲット１５、１６と基板１４との間の距離が長くなり、ターゲット取付け角度が３０度程度と小さい方がフラットバンドシフトが小さくなることが認められる。
【００４３】
図５には、スパッタリング室１１内の圧力と発生する応力との関係を示し、また図６にはスパッタリング室１１内の圧力と成膜速度との関係を示す。これらのグラフから、成膜時に発生する応力はスパッタリング室１１内の圧力の変化に応じて大きく変化し、１．４Ｐａ程度でほぼゼロになっている。一方、成膜速度はスパッタリング室１１内の圧力の変化してもほぼ一定に維持されることが判る。従って発生する応力を低く抑えるにはスパッタリング室１１内の圧力を１．４Ｐａ程度にするのが好ましい。
【００４４】
以上説明してきたように、本発明によれば、透明または半透明の基板上に、少なくとも正孔を注入する陽極と、発光領域を備えた発光層と、電子を注入する陰極と、上部に設けられた保護層とを有する有機エレクトロルミネッセンス素子の製造において、二つのターゲットに交流を印加するスパッタリング法を用いて保護膜を形成することにより、一方のターゲットがカソードのときに他方のターゲットがアノードとして機能するため、電子の移動やＡｒのようなキャリアガスイオンの移動は、ターゲット間で行われ、基板には、ほとんど電子やＡｒイオンなどが到達しないため、ダメージが小さくなる。従ってダークスポットの原因となる外部からの水分、酸素等の浸入を防止することが可能となる。
【００４５】
また、本発明においては、処理すべき素子の表面に対して二つのターゲットの成す角度は３０〜７０度に設定することによって、プラズマダメージを低く抑えて成膜速度を高く維持することができ、従ってダメージを小さくして高い成膜効率を得ることができる。
【図面の簡単な説明】
【図１】本発明の一実施の形態における有機エレクトロルミネッセンス素子の要部断面図。
【図２】本発明を実施している成膜装置の一実施の形態を示す概略線図。
【図３】図２に示す装置においてターゲット取付け角度を一定にして各ターゲットと基板との間の距離を種々変えた時のダメージ評価の例を示すグラフ。
【図４】図２に示す装置において各ターゲットと基板との間の距離を一定にしてターゲット取付け角度を種々変えた時のダメージ評価の例を示すグラフ。
【図５】スパッタリング室内の圧力と発生する応力との関係を示すグラフ。
【図６】スパッタリング室内の圧力と成膜速度との関係を示すグラフ。
【図７】従来の有機エレクトロルミネッセンス素子の一例を示す要部断面図。
【符号の説明】
１：基板
２：陽極
３：正孔輸送層
４：発光層
５：陰極
６：保護層
１０：基板の搬入、搬出室
１１：スパッタリング室
１２：仕切りバルブ
１３：基板ホルダ
１４：処理すべき有機エレクトロルミネッセンス素子
１５：ターゲット
１６：ターゲット
１７：交流電源[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a method and an apparatus for manufacturing an organic electroluminescence element that can be used for various display devices, a light source or a backlight of the device, a light emitting element used for an optical communication device, and the like.
[0002]
[Prior art]
The electroluminescent element is a light emitting element utilizing electroluminescence of a solid fluorescent substance, and includes an inorganic electroluminescent element using an inorganic material as a luminous body and an electroluminescent element using an organic material. The first thing that was put into practical use was an inorganic electroluminescent element, which has been used for a backlight of a liquid crystal display and the like. On the other hand, electroluminescent devices using organic materials had very poor luminous efficiency in the initial development research, and did not progress to full-scale practical use research. There has been proposed an organic electroluminescent device having a function-separated type laminated structure in which a hole transport layer and a light emitting layer are separated, and which can obtain a high emission luminance of 1000 cd / m ² or more even at a low voltage of 10 V or less. After that, research on organic electroluminescent devices having a similar function-separated type laminated structure has been actively conducted, and has been put to practical use.
[0003]
FIG. 7 of the accompanying drawings shows an example of an organic electroluminescence device having a conventional structure. The organic electroluminescence device shown in FIG. 7 has a structure in which an anode 2, a hole transport layer 3, a light emitting layer 4, and a cathode 5 are sequentially stacked on a transparent or translucent substrate 1 such as glass. The anode 2 is made of a transparent conductive film such as ITO, and is formed by a sputtering method, a resistance heating evaporation method, or the like. The hole transport layer 3 is made of N, N′-diphenyl-N, N′-bis (3-methylphenyl) -1,1′-diphenyl-4,4′-diamine or the like, and is formed by resistance heating evaporation or the like. It is formed. The light emitting layer 4 is made of 8-hydroxyquinoline aluminum or the like, and is formed by a resistance heating vapor deposition method or the like, like the hole transport layer 3. The cathode 5 is made of a metal film having a thickness of 100 nm to 300 nm, and is similarly formed by a resistance heating evaporation method or the like.
[0004]
In the conventional organic electroluminescent device configured as described above, the anode 2 is used as a positive electrode, and the cathode 5 is used as a negative electrode. Holes are injected into the light-emitting layer 4 through the light-emitting layer 4, and electrons are injected from the cathode 5 into the light-emitting layer 4. As a result, recombination of holes and electrons occurs in the light emitting layer 4, and the excitons generated thereby move from the excited state to the ground state and emit light.
[0005]
In this type of organic electroluminescent device, a highly active alloy material is used for the cathode in many cases in order to improve the characteristics. Therefore, corrosion or oxidation due to reaction with moisture or oxygen in the air is likely to occur. When the cathode is deteriorated due to corrosion or oxidation as described above, a non-light-emitting portion called a dark spot is remarkably grown in the light-emitting layer, which causes deterioration of characteristics of the organic electroluminescent element over time. In addition, in this type of organic electroluminescence device, in addition to the cathode, the organic material used for the organic thin film layer such as the light emitting layer and the hole transport layer also generally undergoes a structural change due to a reaction with moisture or oxygen. It also causes dark spots to grow.
[0006]
With respect to the growth of dark spots, it has been reported that, even if a very small amount of water is present in a vacuum of, for example, about 10 ⁻⁴ Torr, the growth of dark spots is promoted. Therefore, in order to completely suppress the growth of dark spots and increase the durability and reliability of the organic electroluminescence device, the material used for the cathode and the organic thin film layer by sealing the entire organic electroluminescence device and using moisture and oxygen It is necessary to prevent the reaction with.
[0007]
Conventionally, many proposals have been made for sealing an organic electroluminescence element. For example, there is a method of forming a protective film made of an insulating inorganic compound, followed by shielding with an electrically insulating glass or an electrically insulating airtight fluid, a method of enclosing a desiccant in a sealed airtight container, and the like. However, these conventional solutions impair the thinness characteristic of the organic electroluminescence element, and it is difficult to cope with a film that is expected to increase in demand in the future.
[0008]
As a sealing method corresponding to film formation, it has been proposed to form a protective film and cover the organic electroluminescent element. For example, a carbon film such as Si ₃ N ₄ or diamond is formed by ECR plasma CVD. A method of forming the organic electroluminescent device on the outer surface has been proposed.
[0009]
In addition, it has been reported that the growth of dark spots is caused by the fact that a substance serving as a nucleus is present at the center of the dark spot, and moisture enters the element portion through the nucleus. By the way, nuclei have various sizes from submicron to several tens of microns, and as a protective film to prevent moisture from entering all these nuclei, the film itself has low moisture permeability and a thick film can be formed. Must have the property that However, the conventional method described above cannot provide a protective film satisfying the above characteristics.
[0010]
Furthermore, as a phenomenon similar to the dark spot growth, it is also reported that a non-light emitting region gradually grows from an end of a light emitting surface. The organic material is exposed at the end of the organic electroluminescence element, and this is due to the intrusion of moisture from there, especially when the light emitting surface is formed in a high-definition dot shape. It will be big. A satisfactory means for suppressing the growth of the non-light-emitting region from the end of the light-emitting surface has not been proposed.
[0011]
[Problems to be solved by the invention]
One of the causes of the above problems in the production of conventional organic electroluminescent elements is plasma damage when a protective film is formed by a sputtering method.
[0012]
Therefore, an object of the present invention is to provide a method and an apparatus for manufacturing an organic electroluminescence element capable of forming a protective film by a sputtering method capable of reducing the plasma damage and preventing entry of moisture or oxygen from the outside. I have.
[0013]
[Means for Solving the Problems]
To achieve the above object, according to the present invention, on a transparent or translucent substrate, at least an anode for injecting holes, a light emitting layer having a light emitting region, a cathode for injecting electrons, In the method for manufacturing an organic electroluminescence device having the protective layer provided in the above, the protective film is formed by a sputtering method in which alternating current is applied to two targets.
[0014]
Preferably, the angle between the two targets with respect to the surface of the device to be processed may be set at 30 to 70 degrees.
[0015]
The distance between the two targets and the organic electroluminescent device to be processed can be preferably set to 100 mm or more.
[0016]
The apparatus for manufacturing an organic electroluminescent device according to the present invention is arranged such that a protective layer is formed at an angle of 30 to 70 degrees with respect to the upper surface of the organic electroluminescent device on which a protective layer is to be formed, and a protection layer to which AC power is applied is provided. It is characterized in that it has a sputtering device provided with two targets of a layer constituting material.
[0017]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.
FIG. 1 shows a configuration of an organic electroluminescence device manufactured according to the present invention. In the organic electroluminescent device shown in FIG. 1, an anode 2 for injecting at least holes, a hole transport layer 3, a light emitting layer 4 having a light emitting region, and electrons are injected on a transparent or translucent substrate 1. And a protective layer 6 provided thereon. At least a part of the protective layer 6 provided on the upper portion is formed as a silicon nitride oxide layer.
[0018]
The formation of the anode 2, the hole transport layer 3, the light emitting layer 4, and the cathode 5 on the substrate 1 can be formed by a conventional method.
For example, a glass substrate with an ITO pattern is formed by forming a 120 nm-thick ITO film as an anode 2 on a glass substrate 1 by a sputtering method, and then applying a photoresist (OFPR-800, manufactured by Tokyo Ohka Kogyo Co., Ltd.) by a spin coating method. After coating and forming a resist film having a thickness of 2 μm, and then performing mask exposure and development, patterning the resist film, the ITO film is dry-etched by RIE using HI gas, and the resist film is peeled off. can get.
[0019]
The hole transport layer 3 is formed by cleaning the glass substrate 1 with ITO by ozone treatment and ultraviolet treatment, and then using a resistance heating vapor deposition apparatus to deposit N, N′-diphenyl-N, N′-bis (3-methylphenyl). It is obtained by forming a film of -1,1′-diphenyl-4,4′-diamine (TPD) at a film formation rate of 0.2 nm / s to a film thickness of 20 nm.
[0020]
The light emitting layer 4 is obtained by forming 8-hydroxyquinoline aluminum into a film with a thickness of 35 nm at a film forming rate of 0.3 nm / s using a resistance heating evaporation apparatus.
[0021]
The cathode 5 is obtained by depositing an Al—Li alloy containing 15 atomic% of Li to a thickness of 200 nm using a resistance heating evaporation apparatus.
[0022]
FIG. 2 schematically shows one embodiment of a manufacturing apparatus for carrying out the method of the present invention, and the illustrated apparatus comprises a reactive AC magnetron sputtering apparatus. In FIG. 2, reference numeral 10 denotes a substrate loading / unloading chamber, and reference numeral 11 denotes a sputtering chamber. The sputtering chamber 11 is connected to an exhaust system (not shown). The sputtering chamber 11 and the substrate loading / unloading chamber 10 are partitioned by a partition valve 12. A substrate holder 13 is provided in the sputtering chamber 11, and a substrate, that is, an organic electroluminescent element 14 to be processed is mounted on the substrate holder 13. In the sputtering chamber 11, two targets 15 and 16 are arranged at an angle θ with respect to the surface of the substrate 14, and each of the targets 15 and 16 is connected to a common AC power supply (40 KHz) 17. . Therefore, when one target 15 functions as a cathode, the other target functions as an anode. Although not shown, appropriate magnetic field applying means is incorporated in each of the targets 15 and 16.
[0023]
Hereinafter, an example in which a protective film is formed on an organic electroluminescence element using the sputtering apparatus having the above-described configuration will be described.
[0024]
Embodiment 1
In the reactive AC magnetron sputtering apparatus shown in FIG. 2, Si targets are used as the targets 15 and 16, Ar gas is supplied to the sputtering chamber 11 at 30 sccm, N ₂ gas is supplied at 20 sccm, and power is applied at 1 kW. Was formed at a pressure of 0.4 Pa. The distance between each of the targets 15 and 16 and the substrate 14 was 100 mm, and the mounting angle of the targets 15 and 16 was 30 degrees. Evaluation of plasma damage was performed by the MNOS method.
[0025]
Embodiment 2
In reactive AC magnetron sputtering apparatus shown in FIG. 2, using a Si target as the target 15 and 16, the Ar gas in the sputtering chamber 11 30 sccm, _{N 2} gas was 20sccm supply power to the 1kW turned sputtering chamber 11 Was formed at a pressure of 0.4 Pa. The distance between each of the targets 15 and 16 and the substrate 14 was 100 mm, and the mounting angle of the targets 15 and 16 was 45 degrees. Evaluation of plasma damage was performed by the MNOS method.
[0026]
Embodiment 3
In the reactive AC magnetron sputtering apparatus shown in FIG. 2, Si targets are used as the targets 15 and 16, Ar gas is supplied to the sputtering chamber 11 at 30 sccm, N ₂ gas is supplied at 20 sccm, and power is applied at 1 kW. Was formed at a pressure of 0.4 Pa. The distance between each of the targets 15 and 16 and the substrate 14 was 100 mm, and the mounting angle of the targets 15 and 16 was 70 degrees. Evaluation of plasma damage was performed by the MNOS method.
[0027]
Embodiment 4
In the reactive AC magnetron sputtering apparatus shown in FIG. 2, Si targets are used as the targets 15 and 16, Ar gas is supplied to the sputtering chamber 11 at 30 sccm, N ₂ gas is supplied at 20 sccm, and power is applied at 1 kW. Was formed at a pressure of 0.4 Pa. The distance between each of the targets 15 and 16 and the substrate 14 was 150 mm, and the mounting angle of the targets 15 and 16 was 30 degrees. Evaluation of plasma damage was performed by the MNOS method.
[0028]
Embodiment 5
In the reactive AC magnetron sputtering apparatus shown in FIG. 2, Si targets are used as the targets 15 and 16, Ar gas is supplied to the sputtering chamber 11 at 30 sccm, N ₂ gas is supplied at 20 sccm, and power is applied at 1 kW. Was formed at a pressure of 0.4 Pa. The distance between each of the targets 15 and 16 and the substrate 14 was 150 mm, and the mounting angle of the targets 15 and 16 was 45 degrees. Evaluation of plasma damage was performed by the MNOS method.
[0029]
Embodiment 6
In the reactive AC magnetron sputtering apparatus shown in FIG. 2, Si targets are used as the targets 15 and 16, Ar gas is supplied to the sputtering chamber 11 at 30 sccm, N ₂ gas is supplied at 20 sccm, and power is applied at 1 kW. Was formed at a pressure of 0.4 Pa. The distance between each of the targets 15 and 16 and the substrate 14 was 150 mm, and the mounting angle of the targets 15 and 16 was 70 degrees. Evaluation of plasma damage was performed by the MNOS method.
[0030]
Embodiment 7
In the reactive AC magnetron sputtering apparatus shown in FIG. 2, Si targets are used as the targets 15 and 16, Ar gas is supplied to the sputtering chamber 11 at 30 sccm, N ₂ gas is supplied at 20 sccm, and power is applied at 1 kW. Was formed at a pressure of 0.4 Pa. The distance between each of the targets 15 and 16 and the substrate 14 was 200 mm, and the mounting angle of the targets 15 and 16 was 30 degrees. Evaluation of plasma damage was performed by the MNOS method.
[0031]
Embodiment 8
In the reactive AC magnetron sputtering apparatus shown in FIG. 2, Si targets are used as the targets 15 and 16, Ar gas is supplied to the sputtering chamber 11 at 30 sccm, N ₂ gas is supplied at 20 sccm, and power is applied at 1 kW. Was formed at a pressure of 0.4 Pa. The distance between each of the targets 15 and 16 and the substrate 14 was 200 mm, and the mounting angle of the targets 15 and 16 was 45 degrees. Evaluation of plasma damage was performed by the MNOS method.
[0032]
Embodiment 9
In the reactive AC magnetron sputtering apparatus shown in FIG. 2, Si targets are used as the targets 15 and 16, Ar gas is supplied to the sputtering chamber 11 at 30 sccm, N ₂ gas is supplied at 20 sccm, and power is applied at 1 kW. Was formed at a pressure of 0.4 Pa. The distance between each of the targets 15 and 16 and the substrate 14 was 200 mm, and the mounting angle of the targets 15 and 16 was 70 degrees. Evaluation of plasma damage was performed by the MNOS method.
[0033]
[Comparative Example 1]
In the reactive AC magnetron sputtering apparatus shown in FIG. 2, Si targets are used as the targets 15 and 16, Ar gas is supplied to the sputtering chamber 11 at 30 sccm, N ₂ gas is supplied at 20 sccm, and power is applied at 1 kW. Was formed at a pressure of 0.4 Pa. The distance between each of the targets 15 and 16 and the substrate 14 was 100 mm, and the mounting angle of the targets 15 and 16 was 0 degree. Evaluation of plasma damage was performed by the MNOS method.
[0034]
[Comparative Example 2]
In the reactive AC magnetron sputtering apparatus shown in FIG. 2, Si targets are used as the targets 15 and 16, Ar gas is supplied to the sputtering chamber 11 at 30 sccm, N ₂ gas is supplied at 20 sccm, and power is applied at 1 kW. Was formed at a pressure of 0.4 Pa. The distance between each of the targets 15 and 16 and the substrate 14 was 100 mm, and the mounting angle of the targets 15 and 16 was 90 degrees. Evaluation of plasma damage was performed by the MNOS method.
[0035]
[Comparative Example 3]
In the reactive AC magnetron sputtering apparatus shown in FIG. 2, Si targets are used as the targets 15 and 16, Ar gas is supplied to the sputtering chamber 11 at 30 sccm, N ₂ gas is supplied at 20 sccm, and power is applied at 1 kW. Was formed at a pressure of 0.4 Pa. The distance between each of the targets 15 and 16 and the substrate 14 was 150 mm, and the mounting angle of the targets 15 and 16 was 0 degree. Evaluation of plasma damage was performed by the MNOS method.
[0036]
[Comparative Example 4]
In the reactive AC magnetron sputtering apparatus shown in FIG. 2, Si targets are used as the targets 15 and 16, Ar gas is supplied to the sputtering chamber 11 at 30 sccm, N ₂ gas is supplied at 20 sccm, and power is applied at 1 kW. Was formed at a pressure of 0.4 Pa. The distance between each of the targets 15 and 16 and the substrate 14 was 150 mm, and the mounting angle of the targets 15 and 16 was 90 degrees. Evaluation of plasma damage was performed by the MNOS method.
[0037]
[Comparative Example 5]
In the reactive AC magnetron sputtering apparatus shown in FIG. 2, Si targets are used as the targets 15 and 16, Ar gas is supplied to the sputtering chamber 11 at 30 sccm, N ₂ gas is supplied at 20 sccm, and power is applied at 1 kW. Was formed at a pressure of 0.4 Pa. The distance between each of the targets 15 and 16 and the substrate 14 was 200 mm, and the mounting angle of the targets 15 and 16 was 0 degree. Evaluation of plasma damage was performed by the MNOS method.
[0038]
[Comparative Example 6]
In reactive AC magnetron sputtering apparatus shown in FIG. 2, using a Si target as the target 15 and 16, the Ar gas in the sputtering chamber 11 30 sccm, _{N 2} gas was 20sccm supply power to the 1kW turned sputtering chamber 11 Was formed at a pressure of 0.4 Pa. The distance between each of the targets 15 and 16 and the substrate 14 was 200 mm, and the mounting angle of the targets 15 and 16 was 90 degrees. Evaluation of plasma damage was performed by the MNOS method.
[0039]
Table 1 shows the measurement results in the respective examples and comparative examples.
[0040]
[Table 1]

[0041]
In Table 1, when the target mounting angle is 0 degree as shown in the comparative example, there is almost no flat band shift, but the film forming speed is extremely slow, which is not practical. On the other hand, when the angle is 90 degrees, the film forming speed is very fast, but the flat band shift is very large, which is not practical. On the other hand, as shown in the examples, when the target mounting angle is 30 to 70 degrees, the flat band shift is small and the film forming speed is high.
[0042]
FIG. 3 is a graph showing an example of damage evaluation when the distance between each of the targets 15, 16 and the substrate 14 is variously changed while the target mounting angle is fixed in the apparatus shown in FIG. FIG. 4 is a graph showing an example of damage evaluation when the distance between each of the targets 15 and 16 and the substrate 14 is fixed and the target mounting angle is variously changed. From these graphs, it is recognized that the flat band shift decreases as the distance between each of the targets 15 and 16 and the substrate 14 increases and the target mounting angle is as small as about 30 degrees.
[0043]
FIG. 5 shows the relationship between the pressure in the sputtering chamber 11 and the generated stress, and FIG. 6 shows the relationship between the pressure in the sputtering chamber 11 and the film formation rate. From these graphs, it can be seen that the stress generated at the time of film formation greatly changes in accordance with the change in the pressure in the sputtering chamber 11 and is almost zero at about 1.4 Pa. On the other hand, it can be seen that the film formation rate is maintained substantially constant even when the pressure in the sputtering chamber 11 changes. Therefore, in order to keep the generated stress low, it is preferable to set the pressure in the sputtering chamber 11 to about 1.4 Pa.
[0044]
As described above, according to the present invention, on a transparent or translucent substrate, at least an anode for injecting holes, a light emitting layer having a light emitting region, a cathode for injecting electrons, and a cathode In the production of an organic electroluminescent device having a protective layer and a protective film formed by using a sputtering method of applying an alternating current to two targets, when one target is a cathode, the other target as an anode In order to function, the movement of electrons and the movement of carrier gas ions such as Ar are performed between targets, and almost no electrons or Ar ions reach the substrate, so that damage is reduced. Therefore, it is possible to prevent intrusion of moisture, oxygen, and the like from the outside, which cause dark spots.
[0045]
Further, in the present invention, by setting the angle formed by the two targets with respect to the surface of the element to be processed at 30 to 70 degrees, plasma damage can be suppressed and the film formation rate can be maintained high, Therefore, high film formation efficiency can be obtained with less damage.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view of a main part of an organic electroluminescence element according to an embodiment of the present invention.
FIG. 2 is a schematic diagram showing one embodiment of a film forming apparatus embodying the present invention.
FIG. 3 is a graph showing an example of damage evaluation when the distance between each target and a substrate is variously changed while the target mounting angle is fixed in the apparatus shown in FIG. 2;
FIG. 4 is a graph showing an example of damage evaluation when the distance between each target and a substrate is fixed and the target mounting angle is variously changed in the apparatus shown in FIG. 2;
FIG. 5 is a graph showing a relationship between pressure in a sputtering chamber and generated stress.
FIG. 6 is a graph showing a relationship between a pressure in a sputtering chamber and a deposition rate.
FIG. 7 is a cross-sectional view of a main part showing an example of a conventional organic electroluminescence element.
[Explanation of symbols]
1: substrate 2: anode 3: hole transport layer 4: light-emitting layer 5: cathode 6: protective layer 10: substrate loading / unloading chamber 11: sputtering chamber 12: partition valve 13: substrate holder 14: organic electrons to be processed. Luminescent element 15: Target 16: Target 17: AC power supply

Claims (4)

Manufacture of an organic electroluminescence device having, on a transparent or translucent substrate, an anode for injecting at least holes, a light emitting layer having a light emitting region, a cathode for injecting electrons, and a protective layer provided on top A method for manufacturing an electroluminescent device, wherein the protective film is formed by a sputtering method in which alternating current is applied to two targets. 2. The method according to claim 1, wherein the angle between the two targets is 30 to 70 degrees. 2. The method according to claim 1, wherein a distance between each of the two targets and the organic electroluminescent element to be processed is 100 mm or more. Manufacture of an organic electroluminescence device having, on a transparent or translucent substrate, an anode for injecting at least holes, a light emitting layer having a light emitting region, a cathode for injecting electrons, and a protective layer provided on top The apparatus includes two targets of a protective layer constituting material, each of which is disposed at an angle of 30 to 70 degrees with respect to the upper surface of an organic electroluminescent element on which a protective layer is to be formed, and to which AC power is applied. An apparatus for manufacturing an organic electroluminescence device, comprising: a sputtering device.

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