JPH10289784A - Organic electroluminescnet element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve a display state and raise the yield of a panel for reducing production cost by constituting such that a transparent support body having a luminous conversion layer is provided, so as to be faced to an insulation substrate having an organic electroluminescent cell made of an organic luminous layer or the like clamped with a cathode and an anode, and an active matrix circuit element for driving the cell, respectively at an upper level. SOLUTION: TFTs 2 to 6, and an organic electroluminescent cell clamped with a lower electrode 22 and an upper electrode 23, and formed out of an organic luminous layer 9 for forming each pixel are arranged on the insulation substrate 21 made of a glass panel, silicon wafer or the like. Furthermore, the upper electrode 23 formed so as to have transmissivity in a visible ray zone and used as a cathode is preferably a laminate of a low work function material layer, such as Mg and Al coming in contact with the organic luminous layer 9 and giving a work function equal to or below 4 eV, and a transparent conductive layer such as ITO and ZnO, thereby improving electron injection efficiency. Also, a transparent support body 24 with a fluorescent conversion layer, containing a fluorescent pigment or a color filter luminous conversion layer 7, and the insulation substrate 21 are kept at the prescribed gap from each other via a spacer.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic electroluminescent device, and more particularly, to a thin film device which emits light by applying an electric field to a light emitting layer made of an organic compound.

[0002]

2. Description of the Related Art Conventionally, as a thin film type electroluminescent (EL) element, Zn, which is a group II-VI compound semiconductor of an inorganic material, is used.
In general, S, CaS, SrS, and the like are doped with Mn or a rare earth element (Eu, Ce, Tb, Sm, or the like) which is a luminescence center. However, EL devices manufactured from the above inorganic materials include: 1) AC drive is required (50 to 1000 Hz), 2) High drive voltage (up to 200 V), 3) It is difficult to achieve full color (especially blue), and 4) Peripheral drive circuit is expensive. .

However, in recent years, in order to improve the above problems,
Development of EL devices using organic thin films has been started. In particular, in order to enhance the luminous efficiency, the type of the electrode was optimized for the purpose of improving the efficiency of carrier injection from the electrode, and a hole transport layer composed of an aromatic diamine and a luminescent layer composed of an aluminum complex of 8-hydroxyquinoline were used. Of an organic electroluminescent device provided with a device (Appl. Phys. Le)
tt. , Vol. 51, p. 913, 1987), the luminous efficiency is greatly improved as compared with a conventional EL device using a single crystal such as anthracene, and the practical characteristics are approached.

In addition to the electroluminescent device using a low molecular material as described above, poly (p-phenylenevinylene) (Nature, 347, 539, 1) may be used as a material for the light emitting layer.
990 et al.), Poly [2-methoxy-5- (2-ethylhexyloxy) -1,4-phenylenevinylene] (A
ppl. Phys. Lett. 58, 1982,
1991 et al.), Poly (3-alkylthiophene) (J
pn. J. Appl. Phys. 30 volumes, L1938
1991, et al.) And the development of an electroluminescent device using a polymer material, and a device in which a low molecular light emitting material and an electron transfer material are mixed with a polymer such as polyvinyl carbazole (Applied Physics, vol. 61, p. 1044) , 1992). Further, for example, doping a fluorescent dye for laser such as coumarin using an aluminum complex of 8-hydroxyquinoline as a host material (J. Appl. Phys.
s. 65, 3610, 1989).

[0005]

In order to use such an organic electroluminescent device as a display panel, generally, a matrix addressing method (Japanese Patent Laid-Open No. 2-66873; Technical Report of the Institute of Telecommunications, OME 89-46, is used).
37, 1989), but the luminance decreases with a decrease in the duty ratio with an increase in the number of pixels (IEICE Technical Report, OME88-47, 3).
5, 1988) and the occurrence of crosstalk is a serious problem in practical use. Furthermore, with the increase in the number of scanning lines, it becomes necessary to emit light with high luminance instantaneously during dynamic driving, resulting in an increase in driving voltage and a decrease in power conversion efficiency.

In order to solve the problem of the simple matrix driving method, it is conceivable to drive an organic electroluminescent device by an active matrix circuit (Japanese Patent Laid-Open No. 6-325).
869; JP-A-7-122360; JP-A-7-122361; JP-A-7-122362; JP-A-8-54836;
No. 00). However, there is a major problem with full color.

[0007] Several proposals have been made for a full-color system so far: 1) A system in which an organic light-emitting device is patterned and arranged in a plane according to each light-emitting color (RGB) (Appl. Phys. L).
ett. , 69, 3117, 1996), 2) A method using a microresonator structure (Jpn. J. App.
l. Phys. 34, L1234, 1995), 3) A method of combining a white light emitting element and a color filter (JP-A-7-142169), 4) A method of combining a blue light-emitting element and a fluorescence conversion layer (JP-A-3-152897) 5) A method of laminating RGB light emitting layers (French Patent No. 2,
728,082).

The method 1) is difficult to apply to an organic layer due to the process, and the method 2) has a problem that an expensive half mirror is required and the wavelength is shifted due to a viewing angle. In the method 3), by using a laminated type,
It becomes necessary to insulate the wiring of each of the RGB light emitting layers in the vertical direction, and the wiring becomes very complicated. In the methods 3) and 4), since the organic layer can be formed solid, both methods are currently applicable to a full color panel.

A full color panel is a QVGA specification (32
Since the number of pixels at a level of 0 × 240 dots or more is assumed, the active matrix drive type is basically used. There is a need for a method that makes the above methods 3) and 4) compatible with the active matrix circuit. In the method disclosed so far (JP-A-6-325869), the organic electroluminescent cell of each pixel is formed on the same substrate as the element (TFT) of the active matrix driving circuit.
In addition, a luminescence conversion layer (color filter layer or fluorescence conversion layer) is formed outside the substrate or on the element side. FIG. 1 is a cross-sectional view schematically showing an example of the structure of a conventional general organic electroluminescent device, wherein 1 is a transparent substrate, 2 to 6 are TFTs, 7 is a light emission conversion layer, 8 is an anode, and 9 is organic light emission. Layers 10 are cathodes, 1
1 represents a back support.

However, considering the manufacturing process of the TFT, the process of forming the luminescence conversion layer is performed after the formation of the TFT, but the TFT already formed with a developing solution such as an alkali used for patterning the luminescence conversion layer is damaged. For T
A protective film that can withstand the wet process must be formed on the FT portion. Considering the yield as a panel, the yield of the entire panel is expected to be considerably lower because it is a product of the TFT yield and the luminescence conversion layer yield.

[0011]

The above-mentioned problem of the yield in the manufacturing process is a problem which must be overcome to realize a full-color panel. In view of the above situation, the present inventors have an object to provide an organic electroluminescent device capable of active matrix driving and capable of performing full-color display without reducing the manufacturing yield of the entire panel. That is, the present invention provides an organic electroluminescent cell composed of at least an organic light emitting layer sandwiched between an anode and a cathode on an insulating substrate, and an active matrix circuit for driving the organic electroluminescent cell on the substrate. An organic electroluminescent device, wherein a transparent support is disposed to face the substrate, and a luminescence conversion layer for converting luminescence from an organic electroluminescent cell is provided on the transparent support. Exists in light emitting elements.

[0012]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, an organic electroluminescent device of the present invention will be described with reference to the attached drawings. FIG. 2 is a cross-sectional view schematically showing a structure example of a general organic electroluminescent device used in the present invention, wherein 21 is a substrate, 2 to 6 are TFTs, 22 is a lower electrode, 9 is an organic light emitting layer, 23 Represents an upper electrode, and 24 represents a transparent support. The substrate 21 serves as a support for the organic electroluminescent cell and the TFT portion. When the process temperature in the TFT manufacturing process (film formation of amorphous silicon, polycrystalline silicon, CdSe, etc.) is taken into consideration, the substrate 21 has a temperature of 200 ° C. or more. Those having heat resistance are preferable, and a quartz or glass plate, a silicon wafer, or the like is used. In particular, the use of a silicon wafer has the advantage that a polycrystalline silicon TFT can be formed with high definition in advance. An active matrix circuit other than a TFT can be used in the present invention. For example, active driving using a metal / insulator / metal (MIM) element is also possible. Since the process temperature of amorphous silicon is low, a resin substrate can be used in addition to the above substrate. However, in the case of a resin substrate, since gas barrier properties are required, it is necessary to provide a gas barrier layer of silicon oxide, silicon nitride, or the like on at least one surface of the substrate.

FIG. 2 shows a structure of a TFT called an inverted staggered type. It comprises a gate electrode 2, a gate insulating film 3, a semiconductor layer 4, an ohmic contact layer 5, and source and drain electrodes 6a and 6b. Although FIG. 2 shows only the last TFT, at least two switching TFTs and one capacitor are required for active driving of the organic electroluminescent cell. FIG. 3 shows a specific circuit configuration example. FIG. 4 schematically shows the active drive circuit of FIG. 3 in a plan view.

On the substrate 21, an organic electroluminescent cell comprising the organic light emitting layer 9 sandwiched between the lower electrode 22 and the upper electrode 23 for forming each pixel is provided. Since light emitted from the organic light emitting cell is extracted through the upper electrode, the upper electrode needs to have a transmittance of 60% or more in the visible region (400 to 800 nm). In order to obtain light emission from the organic light emitting layer, it is necessary to inject holes and electrons from the respective electrodes and to recombine in the organic light emitting layer to excite the constituent molecules of the organic light emitting layer. In the present invention, the following two types of charge injection methods are devised: The lower electrode is used as an anode and the upper electrode is used as a cathode. B. The lower electrode is a cathode and the upper electrode is an anode. In both the method A and the method B, as described above, the upper electrode needs to have transparency in the visible region. Hereinafter, the element configuration in each method will be described in detail.

<Method A> Since transparency is not required for the lower electrode (anode), a metal satisfying the work function required for hole injection is usually used. The value of the work function is desirably 4.6 eV or more, and metals satisfying this value are, for example, Chemical Handbook (Basic Edition II, 49, 3rd edition of the Chemical Society of Japan).
3 to 494, Maruzen, 1984), gold, silver,
Metals such as copper, iridium, molybdenum, niobium, nickel, osmium, palladium, platinum, ruthenium, tantalum, tungsten and their alloys, indium and / or
Alternatively, a metal oxide such as a tin oxide (hereinafter abbreviated as ITO) or copper iodide, or a conductive polymer such as polypyrrole, polyaniline, or poly (3-methylthiophene) may be used. Further, in order to reduce the wiring resistance, the above metal can be laminated on another low-resistance conductive material to lower the resistance as a whole. The thickness of the lower electrode is usually
It is about 5 to 1000 nm, preferably about 10 to 500 nm.

Although a transparent electrode is required as the upper electrode (cathode), 4.0 e is required to efficiently inject electrons.
A material having a work function of V or less is desirable. However, the work function of a transparent oxide conductor such as ITO or ZnO is 4.6 eV or more, and it is difficult to use it as a cathode. Therefore, it is an effective method to reduce the thickness of a work function material of 4.0 eV or less to an extent having a sufficient transmittance, form the work function material on the organic light emitting layer, and laminate the transparent conductive film thereon. I found it. As the low work function material of 4.0 eV or less, similarly, according to Chemical Handbook, aluminum, barium, calcium, cerium, erbium, europium, gadolinium, hafnium, indium, lanthanum, magnesium, manganese, neodymium, scandium, Samarium, yttrium, zinc,
Also used are metals such as zirconium and alloy compositions of these metals with the above-mentioned metals having a work function of 4.6 eV or more. Compound materials such as LaB ₆ are also possible for this purpose. The thickness of the low work function material layer is 1 to 100 nm, preferably 0.5 to
It is about 50 nm. On this low work function material layer, the above-mentioned transparent conductive layer of ITO, ZnO, etc.
nm, preferably about 10 to 500 nm.
Since an active drive circuit having a switching and memory function for each lower electrode is formed on the substrate, the upper electrode may be formed by a solid film over the entire display area.

Instead of the low work function material layer, an interface layer that facilitates electron injection from the cathode to the light emitting layer by a tunnel barrier effect may be used. Materials used for this purpose include alkali metal fluorides such as LiF and NaF, alkali earth metal fluorides such as MgF ₂ and CaF ₂ , alkali metal oxides such as Li ₂ O, MgO, BaO
And the like, and these materials are insulative, so that the film thickness is 0.2 to 10 nm.
Is preferable.

As a method for forming the lower electrode and the upper electrode, a vacuum evaporation method, a sputtering method, an ECR sputtering method, an ion beam sputtering method or the like by a resistance heating method or an electron beam method is used. Next, the structure of the organic light emitting layer 9 will be described. Although it is possible to form the luminescent material in a single layer,
In order to increase luminous efficiency, a structure including at least a hole transport layer and an electron transport layer is desirable. FIG. 5 is a cross-sectional view schematically showing an example of the structure of a general organic electroluminescent cell used in the present invention, wherein 21 is a substrate, 22 is a lower electrode (anode), 41 is a hole transport layer, and 42 is an electron. The transport layer 23 represents an upper electrode (cathode).

The conditions required for the material of the hole transport layer 41 include a material having a high hole injection efficiency from the lower electrode 22 and capable of transporting the injected holes efficiently. is necessary. For that purpose, the ionization potential is small, the transparency to visible light is high, and the hole mobility is large, and the stability is excellent.
It is required that impurities serving as traps hardly occur during production or use. In addition to the above general requirements, when considering applications for in-vehicle display, the element is required to have further heat resistance. Therefore, a material having a Tg of 70 ° C. or more is desirable.

As such a hole transport material, for example, an aromatic diamine compound in which tertiary aromatic amine units such as 1,1-bis (4-di-p-tolylaminophenyl) cyclohexane are linked (Japanese Patent Laid-Open Publication No. 1959-19439
No. 3), 4,4'-bis [N- (1-naphthyl)-
Aromatic amines containing two or more tertiary amines represented by [N-phenylamino] biphenyl and having two or more condensed aromatic rings substituted by nitrogen atoms (JP-A-5-234681); Aromatic triamines having a starburst structure in derivatives (US Pat. No. 4,92
Aromatic diamines such as N, N'-diphenyl-N, N'-bis (3-methylphenyl) biphenyl-4,4'-diamine (U.S. Pat. No. 4,764,62)
No. 5), α, α, α ′, α′-tetramethyl-α, α ′
-Bis (4-di-p-tolylaminophenyl) -p-xylene (JP-A-3-269084), triphenylamine derivatives which are sterically asymmetric as a whole molecule (JP-A-4-129271), pyrenyl In which a plurality of aromatic diamino groups are substituted on a group (JP-A-4-17539)
No. 5), an aromatic diamine in which a tertiary aromatic amine unit is linked by an ethylene group (JP-A-4-264189), an aromatic diamine having a styryl structure (JP-A-Hei-4).
(Japanese Patent Application Laid-Open No. 4-290466), a compound in which an aromatic tertiary amine unit is linked by a thiophene group (JP-A-4-304466).
JP-A-4-308688), a benzylphenyl compound (JP-A-4-364153), and a fluorene group of 3
Tertiary amine compound (JP-A-5-239455), bisdipyridylaminobiphenyl (JP-A-5-3473)
20634), N, N, N-triphenylamine derivatives (JP-A-6-1972), and aromatic diamines having a phenoxazine structure (JP-A-7-138562).
JP, JP-A-7-252474, a hydrazone compound (JP-A-2-311591), a silazane compound (U.S. Pat. No. 4,950,950), and a silanamin derivative ( JP-A-6-49079), phosphamine derivatives (JP-A-6-25659), and quinacridone compounds. These compounds may be used alone, or may be used as a mixture as necessary.

In addition to the above compounds, as the material of the hole transport layer 41, polyvinyl carbazole or polysilane (Ap
pl. Phys. Lett. 59, 2760, 1
991), polyphosphazene (JP-A-5-3109)
No. 49), polyamide (JP-A-5-310949), polyvinyl triphenylamine (JP-A-7-5).
3953), a polymer having a triphenylamine skeleton (Japanese Patent Application Laid-Open No. 4-1330065), and a polymer in which triphenylamine units are linked by a methylene group or the like (Synt.
hetic Metals, 55-57, 4163
P. 1993), polymethacrylates containing aromatic amines (J. Polym. Sci., Polym. C).
hem. Ed. , 21, 969, 1983).

The hole transport layer 41 is formed by laminating the above hole transport material on the lower electrode 22 by a coating method or a vacuum deposition method. In the case of the coating method, one or more hole transport materials and, if necessary, an additive such as a binder resin or a coating improver which does not trap holes are added and dissolved to prepare a coating solution. Then, the material is applied on the anode 22 by a method such as spin coating, and dried to form the hole transport layer 41. Examples of the binder resin include polycarbonate, polyarylate, and polyester. If the amount of the binder resin is large, the hole mobility is reduced, so that a small amount is desirable, and usually 50% by weight or less is preferable.

In the case of the vacuum evaporation method, the hole transporting material is put into a crucible placed in a vacuum vessel, and the inside of the vacuum vessel is evacuated to about 10 ^-4 Pa by a suitable vacuum pump, and then the crucible is heated. Then, the hole transport material is evaporated to form the hole transport layer 4 on the anode 2 on the substrate 1 placed facing the crucible. When the hole transport layer 41 is formed, a metal complex and / or a metal salt of an aromatic carboxylic acid is further used as an acceptor (Japanese Patent Application Laid-Open No. 4-320484).
Benzophenone derivatives and thiobenzophenone derivatives (JP-A-5-295361), fullerenes (JP-A-5-331458), etc., in an amount of 10 ^-3 to 10% by weight.
, To generate holes as free carriers, thereby enabling low-voltage driving.

The thickness of the hole transport layer 41 is usually 10 to 3
00 nm, preferably 30 to 100 nm. In order to uniformly form such a thin film, generally, a vacuum deposition method is often used. In order to improve the contact between the lower electrode 22 and the hole transport layer 41, it is conceivable to provide an anode buffer layer 40 as shown in FIG. The condition required for the material used for the anode buffer layer is that a uniform thin film can be formed with good contact with the anode,
That is, the melting point and the glass transition temperature are high, the melting point is required to be 300 ° C. or more, and the glass transition temperature is required to be 100 ° C. or more. In addition, the ionization potential is low, holes can be easily injected from the anode, and the hole mobility is high. For this purpose, porphyrin derivatives and phthalocyanine compounds (Japanese Patent Application Laid-Open No.
No. 95695), a star bust type aromatic triamine (JP-A-4-308688), a hydrazone compound (JP-A-4-320483), an alkoxy-substituted aromatic diamine derivative (JP-A-4-220995), p- (9-anthryl) -N, N-di-p-tolylaniline (JP-A-3-111485), polythienylenevinylene and poly-p-phenylenevinylene (JP-A-4-145192), polyaniline (App
l. Phys. Lett. 64, 1245, 19
Organic compounds, such as organic compounds, sputtered carbon films (JP-A-8-31573), and metal oxides such as vanadium oxide, ruthenium oxide, and molybdenum oxide. Lecture, 27a-SY
-9, 1996).

As a compound frequently used as the material of the anode buffer layer, a porphyrin compound or a phthalocyanine compound can be given. These compounds may have a central metal or may be non-metallic. Specific examples of these preferred compounds include the following compounds: porphine 5,10,15,20-tetraphenyl-21H, 23
H-porphine 5,10,15,20-tetraphenyl-21H, 23
H-porphine cobalt (II) 5,10,15,20-tetraphenyl-21H, 23
H-porphine copper (II) 5,10,15,20-tetraphenyl-21H, 23
H-porphine zinc (II) 5,10,15,20-tetraphenyl-21H, 23
H-porphine vanadium (IV) oxide 5,10,15,20-tetra (4-pyridyl) -21
H, 23H-porphine 29H, 31H-phthalocyanine copper (II) phthalocyanine zinc (II) phthalocyanine titanium phthalocyanine oxide magnesium phthalocyanine lead phthalocyanine copper (II) 4,4 ′, 4 ″, 4 ″ ′-tetraaza-29
H, 31H-phthalocyanine

In the case of the anode buffer layer, a thin film can be formed in the same manner as in the case of the hole transport layer. In the case of an inorganic substance, however, a sputtering method, an electron beam evaporation method, a plasma CVD method, or the like can be used.
Method is used. The thickness of the anode buffer layer 40 formed as described above is usually 3 to 100 nm, preferably 10 to 50 nm.

An electron transport layer 42 is provided on the hole transport layer 41. The electron transport layer is formed of a compound capable of efficiently transporting electrons from the cathode between the electrodes to which an electric field is applied in the direction of the hole transport layer. The electron transporting compound used for the electron transporting layer 42 needs to be a compound having high electron injection efficiency from the upper electrode (cathode) 23 and capable of efficiently transporting the injected electrons. . For this purpose, it is required that the compound has a high electron affinity, a high electron mobility, a high stability, and an impurity which becomes a trap and hardly occurs during production or use.

Materials satisfying such conditions include aromatic compounds such as tetraphenylbutadiene (Japanese Unexamined Patent Publication No.
And metal complexes such as aluminum complexes of 8-hydroxyquinoline (JP-A-59-1943).
No. 93), a metal complex of 10-hydroxybenzo [h] quinoline (JP-A-6-322362), and a mixed ligand aluminum chelate complex (JP-A-5-19837).
7, JP-A-5-198378, JP-A-5-1983
JP-A-214332, JP-A-6-172751, cyclopentadiene derivative (JP-A-2-289675), perinone derivative (JP-A-2-289676), oxadiazole derivative (JP-A-2-21679)
No. 1), bisstyrylbenzene derivatives (Japanese Unexamined Patent Publication No.
JP-A-245087 and JP-A-2-222484), perylene derivatives (JP-A-2-189890 and JP-A-3-189890).
No. 791), coumarin compounds (JP-A-2-1916)
Nos. 94 and 3-792), rare earth complexes (JP-A 1-256584), distyrylpyrazine derivatives (JP-A 2-252793), and p-phenylene compounds (JP-A 3-33183). ), Thiadiazolopyridine derivatives (JP-A-3-37292), pyrrolopyridine derivatives (JP-A-3-37293), naphthyridine derivatives (JP-A-3-203982),
Silole derivatives (The 70th Annual Meeting of the Chemical Society of Japan, 2D1
02 and 2D103, 1996).

The thickness of the electron transport layer 42 is usually 10 to 2
00 nm, preferably 30 to 100 nm. The electron transporting layer can be formed in the same manner as the hole transporting layer, but usually, a vacuum evaporation method is used. For the purpose of improving the luminous efficiency of the device and changing the luminescent color, for example, 8
Doping a fluorescent dye for laser such as coumarin using an aluminum complex of -hydroxyquinoline as a host material (J. Appl. Phys., 65, 3610,
1989). The advantages of this method are: 1) improved luminous efficiency by high-efficiency fluorescent dye, 2) variable emission wavelength by selecting fluorescent dye, 3) fluorescent dye which causes concentration quenching can be used, 4) fluorescent light with poor thin film property Dyes can also be used.

For the purpose of improving the driving life of the device, it is effective to dope a fluorescent dye with the electron transporting material as a host material. For example, using a metal complex such as an aluminum complex of 8-hydroxyquinoline as a host material, naphthacene derivatives represented by rubrene (JP-A-4-335087), quinacridone derivatives (JP-A-5-70773), perylene, etc. By doping a condensed polycyclic aromatic ring (JP-A-5-198377) with 0.1 to 10% by weight based on the host material, it is possible to greatly improve the light-emitting characteristics of the device, especially the driving stability. .

As the host material, for example, when the electron transporting layer 42 plays its role, the above-mentioned electron transporting compound can be mentioned. When the hole transporting layer 41 plays a role as the host material, the above-mentioned aromatic compound can be used. Examples include amine compounds and hydrazone compounds. When the above dopant is doped in the hole transport layer and / or the electron transport layer, the dopant is uniformly doped in the thickness direction of each layer, but may have a concentration distribution in the thickness direction. For example, doping may be performed only near the interface with the hole transport layer, or conversely, doping may be performed near the cathode interface.

In the present invention, the following two methods are conceivable for achieving full-color light emission. one,
In this method, the device emits white light, and the white light is separated into three colors of blue, green, and red using a color filter as a light emission conversion layer. Another method is to cause the device to emit blue light and use the fluorescent light conversion layer as the luminescence conversion layer to extract the blue light in the same color as blue.For green and red, use a green fluorescent material and red fluorescent light. By performing color conversion using materials, three colors of blue, green, and red are obtained. Therefore, the organic light emitting layer needs to have a layer structure capable of emitting white light or blue light. For this purpose, for example, the following layer structure can be provided by giving the electron transport layer a light emitting function.

In the case of white light emission, as shown in FIG.
For example, the electron transport layer 42 is divided into three regions 42a, 42b,
If the blue light-emitting layer 42a, the green light-emitting layer 42b, and the red light-emitting layer 42c are divided into the light-emitting layers 42a, the green light-emitting layers 42b, and the red light-emitting layers 42c from the side in contact with the hole transport layer 41, white light can be obtained by superimposing the light emitted from each layer. The white color balance can be easily adjusted by adjusting the film thickness of each of the blue to red light emitting layers.
As a material used for the light emitting layer of each color, it can be used in combination with the host material used for the electron transport layer described above and further, a doped dye.

In the case of blue light emission, a host material exhibiting blue fluorescence and, if necessary, an electron transport layer doped with a blue fluorescent dye are formed from the electron transport layer materials described above. 5 and FIG. 6, blue light emission can be obtained. As a method for further improving the luminous efficiency of the organic electroluminescent element, an electron injection layer 43 can be further laminated on the electron transport layer 42 (see FIG. 8). The compound used for the electron injection layer 43 is required to be capable of easily injecting electrons from the cathode and having a higher electron transport ability. Examples of such an electron transporting material include aluminum complexes of 8-hydroxyquinoline and oxadiazole derivatives (App)
l. Phys. Lett. 55, 1489, 19
1989 and others and polymethyl methacrylate (PMM
A) and a system dispersed in a resin (Appl. Phys. Le)
tt. , 61, 2793, 1992), phenanthroline derivatives (JP-A-5-331559),
-T-butyl-9,10-N, N'-dicyanoanthraquinonediimine (Phys. Stat. Sol.
(A), Vol. 142, p. 489, 1994), n-type hydrogenated amorphous silicon carbide, n-type zinc sulfide, n-type zinc selenide and the like. The thickness of the electron injection layer is usually 5 to 2
00 nm, preferably 10 to 100 nm.

<Method B> Since transparency is not required for the lower electrode (cathode), a metal satisfying the work function required for electron injection is usually used. The work function value is desirably 4.0 eV or less, but metals satisfying this value are easily oxidized, and it is often difficult to inject electrons when an oxide film is formed on the surface. Also, when patterning a low work function metal using a wet process, it is considered that surface oxidation and corrosion are inevitable. Therefore, it is preferable that only the surface portion of the lower electrode is formed of a low work function material layer, and most of the lower electrode is formed of a low-resistance metal such as copper or aluminum. The thickness of this low work function material layer is 2 to 1
00 nm, preferably about 5 to 50 nm.

In this case, the low work function material layer is, for example,
It can be formed by a vacuum deposition method. As shown in FIG. 2, the source and drain electrodes of the active driving TFT are formed of an insulating protective film 1 to prevent a short circuit with the upper electrode.
2 coated. The insulating protective film is completely covered except for the lower electrode. When the TFT portion and the insulating protective film are combined, the distance from the lower electrode to the top of the insulating protective film is about 3 μm. Since the film thickness of the low work function material layer is very thin as described above, a step is easily cut off at the end of the wall by the vacuum deposition method, so that only the portion on the lower electrode is electrically connected. Since the portion formed on the insulating protective film is electrically insulated, it does not contribute to light emission.

As the low work function material, the materials mentioned in the method A are used. Further, the interface layer shown in the method A can be used instead of the low work function layer. The material and film thickness have already been described in Method A. Although a transparent electrode is required as the upper electrode (anode), a material having a work function of 4.6 eV or more is desirable in order to inject holes efficiently. For this purpose, ITO
A transparent oxide conductive material such as ZnO or ZnO is used. Before forming the upper electrode made of a transparent oxide, a metal having a higher work function (such as gold or palladium) may be formed in a semi-transparent state to improve device characteristics.

As a method of forming the upper electrode, it is necessary to form a film on the side surface of the insulating protective film without causing a step to be cut off. A method that can form a good film is desirable. The upper transparent conductive layer has a thickness of 5 to 1000 nm, preferably 10 to 5 nm.
The layers are stacked at about 00 nm. The upper electrode may be formed by solid film formation over the entire display area.

The structure of the organic light-emitting layer 9 is the reverse of the layer configuration described in the method A. That is, in the configuration of FIG. 5, the order of the substrate, the lower electrode, the electron transport layer, the hole transport layer, and the upper electrode is in that order. The same applies to the structures in FIGS. Finally, the luminescence conversion layer 7 and the transparent support 24 on which it is formed will be described. The role of the transparent support is to not only support the luminescence conversion layer and extract light emitted from the organic electroluminescent cell, but also have a function of shielding the device from the outside air for sealing the device. For this purpose, glass, quartz, and resin coated with a suitable gas barrier layer are used.
It is preferable in consideration of heat resistance and chemical resistance.

There are two methods for the luminescence conversion layer as described above. When combined with a white light emitting element,
A color filter is formed on the transparent support together with a black matrix. The forming method is no different from the existing color filter technology. In the case of the fluorescence conversion layer, a material in which a fluorescent dye is dispersed in a resin medium instead of the pigment is used. It is also possible to have the function of a color filter at the same time as the fluorescence conversion.

The transparent substrate on which the insulating substrate supporting the organic electroluminescent element and the luminescence conversion layer are formed as described above is shielded from the outside air by a suitable spacer and a thermosetting or photocuring resin. It is sealed by using a spacer having a size of 1 to 20 μm,
It is preferable to define the distance between the insulating substrate and the transparent support. At a distance of less than 1 μm, the device may be damaged during handling. At a distance of 20 μm or more, the light emitting portion formed by the organic electroluminescent element and the horizontal direction of the luminescence conversion layer on the transparent support depend on the viewing angle. Misalignment occurs.

[0042]

EXAMPLES Next, the present invention will be described more specifically with reference to examples, but the present invention is not limited to the description of the following examples unless it exceeds the gist. Hereinafter, an example of manufacturing an organic electroluminescent device will be described.

Example 1 (Method A) According to Method A, an element was produced by the following process. As a design of the TFT element, in the circuit diagram shown in FIG. 3, the gate length of the first TFT is 20 microns, the gate width is 100 microns, the gate length of the second TFT is 20 microns, and the gate width is 600 microns. And Pixel area is 600 microns x 600 microns, pixel spacing is 8
The opening ratio was set to 56% by measuring 00 μm × 800 μm.

Hereinafter, each manufacturing process will be described with reference to FIG. (A) Step of forming lower electrode and gate electrode Al is vacuum-deposited on a non-alkali glass (Corning 7059) substrate by a resistance heating method to a thickness of 200 nm, and Au is further deposited on the Al film to a thickness of 20 nm. The layered product was subjected to patterning of the lower electrode (anode) 22 and the gate electrode by ordinary photolithography and wet etching. The work function of the lower electrode (anode) was measured using a surface analyzer (AC-
It was 4.8 eV when measured in 1).

(B) Step of forming gate insulating film, semiconductor layer and ohmic contact layer The substrate prepared in step (a) is set in a plasma CVD apparatus, and the layers 3b, 4b, and 4b are formed under the conditions shown in Table 1 below. 5
b was continuously formed.

[0046]

[Table 1]

(C) a-Si Patterning Step The substrate was taken out of the above-mentioned plasma CVD apparatus, and a-Si patterning was performed by ordinary photolithography and plasma etching using SF ₆ gas. (D) Source and drain electrode formation step A drain and source electrode were formed by sequentially stacking a 50 nm Cr layer and a 100 nm Al layer by ordinary photolithography and electron beam evaporation.

[0048] The plasma etching using (e) n ⁺ a-Si layer etching off process ordinary photolithography technique and SF ₆ gas, etching of the layer of n ⁺ a-Si source and drain electrode as a mask, A channel was formed. When the characteristics of the a-Si TFT of the organic electroluminescent panel produced in the above steps (a) to (e) were evaluated, the mobility (μFE) was 0.5 cm ² / V ·
sec, the threshold value was 3V.

(F) Step of Forming Insulating Film for Protecting Active Matrix Circuit A 1.3 μm-thick film is formed by an ordinary photolithography technique using an alkali-developed transparent heat-resistant resist material (V-259PA manufactured by Nippon Steel Chemical Co., Ltd.). Was formed. (G) Organic electroluminescent layer forming step (white light emitting cell) The drive circuit board completed in step (f) is subjected to ultrasonic cleaning with isopropyl alcohol, water cleaning with pure water, drying with dry nitrogen, and UV / ozone cleaning. After that, the apparatus was set in a vacuum evaporation apparatus with an adhesion mask for limiting an evaporation portion, and evacuated using an oil diffusion pump until the degree of vacuum in the apparatus became 2 × 10 ⁻⁶ Torr or less.

Hereinafter, an organic electroluminescent element having a white light emitting function having the structure shown in FIG. 7 was manufactured. Copper phthalocyanine (H1) (having a β-type crystal form) shown below, which was placed in a molybdenum boat placed in the above vacuum apparatus, was vapor-deposited. Degree of vacuum 2 × 10 ^-6 Torr (about 2.7 × 10 Torr
^-4 Pa) at a deposition rate of 0.3 nm / sec to obtain an anode buffer layer 40 having a thickness of 20 nm.

[0051]

Embedded image

Next, the following 4,4'-bis [N-
(1-Naphthyl) -N-phenylamino] biphenyl (H2) was placed around a crucible.

[0053]

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The deposition was carried out by heating with a tantalum wire heater in the box. At this time, the temperature of the crucible was controlled in the range of 250 to 260 ° C. Degree of vacuum at the time of vapor deposition 1.7 × 10 ^-6 Torr
r (about 2.3 × 10 ⁻⁴ Pa), deposition rate 0.3 to 0.5
A hole transport layer 41 having a thickness of 60 nm was obtained at a rate of nm / sec. As a material of the electron transporting layer 42a having a blue light emitting function, a zinc oxadiazole complex (E1) represented by the following structural formula is
Crucible temperature is controlled within the range of 200 to 210 ° C

[0055]

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The degree of vacuum during vapor deposition is 1.5 × 10 ⁻⁶ T
orr (approximately 2.0 × 10 ⁻⁴ Pa), the deposition rate is 0.2 to
At 0.3 nm / sec, the thickness of the deposited blue light emitting layer is 30
nm. Next, as a material for forming the green light-emitting layer 42b, the following 8-hydroxyquinoline complex (E2) of aluminum was deposited in the same manner. At this time, the crucible temperature is controlled in the range of 270 to 300 ° C., and the degree of vacuum at the time of vapor deposition is 1.5 × 10 ⁻⁶ Torr (about 2.0 × 10 ⁻⁴ P).
a), the deposition rate is 0.1 to 0.2 nm / sec, and the film thickness is 15 n
The layer was laminated on the blue light emitting layer 42a at m.

At the end of the light emitting layer, the red light emitting layer 42c
Is used as a host material, and an 8-hydroxyquinoline complex of aluminum (E2) is used as a host material, and 4- (dicyanomethylene) -2-methyl-6- represented by the following structural formula is used as a dope dye.
(P-dimethylaminostyryl) -4H-pyran (DC
M) (D1) was used.

[0058]

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The crucible temperature of the 8-hydroxyquinoline complex of aluminum at this time is in the range of 270 to 300 ° C.
The temperature of the crucible of DCM is controlled in the range of 100 to 110 ° C., and the degree of vacuum at the time of vapor deposition is 1.3 × 10 ⁻⁶ Torr (about 1.10 Torr).
7 × 10 ⁻⁴ Pa), a deposition rate of 0.1 nm / sec, and a thickness of 15 nm, which was laminated on the green light emitting layer 42c. The amount of DCM contained in the 8-hydroxyquinoline complex of aluminum was 2% by weight. The above-mentioned anode buffer layer 40,
The substrate temperature during vacuum deposition of the hole transport layer 41 and the electron transport layers 42a to 42c was kept at room temperature.

(H) Upper Electrode Forming Step Here, the element on which the vapor deposition up to the electron transport layer 42 has been performed is replaced with a shadow mask that defines the vapor deposition area of the upper electrode and the electrode take-out portion, and then is brought into close contact with the element. Then, it was placed in another vacuum deposition apparatus and evacuated in the same manner as the organic layer until the degree of vacuum in the apparatus became 2 × 10 ⁻⁶ Torr (about 2.7 × 10 ⁻⁴ Pa) or less. Subsequently, a magnesium-silver alloy electrode having a film thickness of 20
nm. Vapor deposition was performed using a molybdenum boat and the degree of vacuum was 5 × 10 ⁻⁶ Torr (about 6.7 × 10 ⁻⁴ Torr).
Pa), the deposition time was 3 minutes and 20 seconds. The atomic ratio of magnesium to silver was set to 10: 1.4. The work function of the magnesium alloy having this composition was 3.6 eV. Subsequently, the device was moved to a sputtering apparatus, and the ITO film was
The upper electrode 23 was completed by laminating on the magnesium / silver alloy film with a thickness of 50 nm. Sputtering was performed by a normal RF magnetron sputtering method without heating the element. The sputtering conditions for ITO were a mixed gas of argon and oxygen (oxygen concentration: 0.1%) and a pressure of 3 × 10 ⁻³ Torr.
r (about 0.4 Pa), power density 0.1 W / cm ² , and the distance between the target and the substrate are 1
0 cm. The work function of the ITO film obtained as described above was 4.7 eV.

[0061] (i) a protective film formed on the step on the device formed to the upper electrode, and further, a SiO ₂ target in the same sputtering apparatus, a transparent SiO ₂
A protective film was formed with a thickness of 1000 nm. (J) Encapsulating Step The element completed up to the step (i) is taken out into a box replaced with dry nitrogen, and a color filter (blue, green, red) is previously provided as a luminescence conversion layer with the electrode pattern of the organic electroluminescent cell. The glass substrate patterned so as to be coincident was aligned with a TFT having a photo-curable resin applied to its periphery and an organic light-emitting cell substrate by using a marker, and then subjected to UV exposure to complete a curing process. At this time, the photocurable resin has a diameter of 5μ.
By dispersing m silica beads, the distance between the organic light emitting cell substrate and the color filter substrate was set to 5 μm. The color filter follows the generally known method,
It was formed using a color resist, a transparent smoothing layer was provided thereon, and the total film thickness was 3 μm.

When the organic electroluminescent device completed in the above steps was driven, red, green, and blue light emission converted by each color filter layer could be confirmed. In addition, a full-color image could be achieved by controlling the gradation of the emission luminance of each of the blue, green, and red sub-pixels. Example 2 (Method B) According to Method B, an element was produced by the following process. The design of the TFT element is the same as in the first embodiment. Hereinafter, each manufacturing process will be described with reference to FIG. (A ') Lower electrode and gate electrode forming step On a non-alkali glass (Corning 7059) substrate, Al is 200 nm thick, and Cr is 50 nm thick.
The lower electrode (cathode) 22 and the gate electrode were patterned by ordinary photolithography technology and wet etching technology.

Steps (b) to (f) are performed in the same manner as in Example 1. (G ') Organic Electroluminescent Layer Forming Step (Blue Light Emitting Cell) Subsequently, a low work function layer of the lower electrode (cathode) was formed by the following method. Ultrasonic cleaning of the drive circuit board completed up to the step (f) with isopropyl alcohol,
After washing with pure water, drying with dry nitrogen, and UV / ozone washing, a shadow mask that defines the deposition area and the electrode take-out section is brought into close contact with the element, and placed in a vacuum deposition apparatus to make it the same as the organic layer. The degree of vacuum in the device is 2 × 10 ^-6 Torr
r (about 2.7 × 10 ⁻⁴ Pa) or less.
As a low work function layer of the lower electrode, an alloy electrode of magnesium and silver was deposited to a thickness of 50 nm by a binary simultaneous evaporation method. The work function of this magnesium alloy is
It was 3.6 eV.

Hereinafter, an organic electroluminescent element having a white light emitting function having the structure shown in FIG. 8 was prepared. In the same manner as in the production process of Example 1, an anode buffer layer 40 of copper phthalocyanine (H1) having a thickness of 20 nm and 4,4′-bis [N- (1-naphthyl) -N-phenylamino] biphenyl ( A hole transport layer 41 of H2) having a thickness of 60 nm was formed. Next, the electron transport layer 42 having a blue light emitting function
As a host material, 2-methyl- represented by the following structural formula
Aluminum diagonal complex of 8-hydroxyquinoline (E
1) and

[0065]

Embedded image

As a dope dye, perylene (D2) represented by the following structural formula was separately added to a separate crucible.

[0067]

Embedded image

Was used to perform binary vapor deposition. At this time, the crucible temperature of the aluminum binuclear complex is controlled in the range of 300 to 320 ° C., the crucible temperature of perylene is controlled in the range of 110 to 120 ° C., and the degree of vacuum during vapor deposition is 1.8 × 10 ⁻⁶ Torr.
(Approximately 2.4 × 10 ⁻⁴ Pa), and the deposition rate is 0.2 to 0.3.
The blue light-emitting layer having a thickness of 45 nm at
1.

Finally, an 8-hydroxyquinoline complex of aluminum (E2) was used as an electron injection layer. At this time, the crucible temperature of the 8-hydroxyquinoline complex of aluminum is controlled in the range of 270 to 280 ° C., and the degree of vacuum at the time of vapor deposition is 1.3 × 10 ⁻⁶ Torr (about 1.7 × 10 ⁻⁴ P).
a), the deposition rate is 0.2 to 0.3 nm / sec, and the film thickness is 30
An nm electron injection layer was laminated on the electron transport layer. The above-described anode buffer layer 40, hole transport layer 41, and electron transport layer 42
The substrate temperature during vacuum deposition of the electron injection layer 43 was kept at room temperature.

(H ') Upper electrode forming step Subsequently, as the upper electrode (anode), an ITO film was
m. Sputtering was performed by a normal RF magnetron sputtering method without heating the element. ITO
The sputtering conditions are as follows: argon-oxygen mixed gas (oxygen concentration 0.1%), pressure 3 × 10 ⁻³ Torr (about 0.4 Pa), power density 0.1 W / cm ² , distance between target and substrate 10cm to prevent plasma damage
And The work function of this anode was 4.7 eV.

Subsequently, after the protective film forming step (i) was carried out in the same manner as in the method A, the sealing step (j) was carried out in the same manner as in Example 1 except that the fluorescence conversion layer was used as the luminescence conversion layer. Do
Completed the entire journey. It is not necessary to use blue light as the fluorescence conversion layer because it is used as it is. For the green fluorescence conversion layer, one obtained by dispersing 3% by weight of coumarin 6 in PMMA is used. For the red fluorescence conversion layer, 1% by weight of coumarin 6 and phenoxazone 660 are used. After dispersing 2% by weight in PMMA, a transparent smoothing layer was laminated to form a film having a total thickness of 3 μm.

When the organic electroluminescent device completed in the above steps was driven, clear red, green and blue luminescence converted in each fluorescence conversion layer could be confirmed.

[0073]

According to the present invention, an excellent display capability is obtained by providing an insulating substrate on which an active matrix circuit and an organic electroluminescent cell are formed, and a transparent support substrate provided with a luminescence conversion layer, opposite to each other. An organic electroluminescent device can be provided, and a panel with good yield and cost can be manufactured. Therefore, the organic electroluminescent panel of the present invention can be applied to the field of flat panel displays (for example, OA, FA and LA computers and wall-mounted televisions) and to display panels of measuring instruments. It is big.

[Brief description of the drawings]

FIG. 1 is a schematic cross-sectional view showing an example of a conventional organic electroluminescent device.

FIG. 2 is a schematic cross-sectional view showing an example of an organic electroluminescent device used in the present invention.

FIG. 3 is an example of a circuit for driving the organic electroluminescent device of the present invention.

FIG. 4 is a plan view of a TFT drive circuit of the organic electroluminescent device of the present invention.

FIG. 5 is a schematic sectional view showing an example of an organic electroluminescent cell.

FIG. 6 is a schematic sectional view showing another example of the organic electroluminescent cell.

FIG. 7 is a schematic sectional view showing another example of the organic electroluminescent cell.

FIG. 8 is a schematic sectional view showing another example of the organic electroluminescent cell.

FIG. 9 is an example of a manufacturing process of an organic electroluminescent panel of the present invention.

FIG. 10 is an example of a manufacturing process of an organic electroluminescent panel of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Transparent substrate 2 TFT gate electrode 3 Gate insulating film 4 Semiconductor layer 5 Ohmic contact layer 6a, 6b Source electrode, drain electrode 7 Emission conversion layer 8 Anode 9 Organic light emitting layer 10 Cathode 11 Back plate 21 Insulating substrate 22 Lower electrode (anode Or cathode) 23 upper electrode (cathode or anode) 24 transparent support 31, 32 TFT1, TFT2 33 storage capacitor 34 scanning line 35 data line 36 common line 37 pixel lower electrode 38 gate insulating film / semiconductor layer 40 anode buffer layer 41 Hole transport layer 42, 42a to 42c electron transport layer 43 electron injection layer

Claims (25)

[Claims] 1. An organic electroluminescent cell comprising at least an organic light emitting layer sandwiched between an anode and a cathode on an insulating substrate, and an active matrix circuit for driving the organic electroluminescent cell on the insulating substrate. An organic electroluminescent device, wherein a transparent support is disposed to face the insulating substrate, and a luminescence conversion layer for converting light emission from the organic electroluminescent cell is provided on the transparent support. Organic electroluminescent device. 2. The method according to claim 1, wherein the anode is provided on the insulating substrate side of the organic electroluminescent cell, the cathode is provided on the transparent support side of the organic electroluminescent cell, and the cathode is 400 to 800.
The organic electroluminescent device according to claim 1, having a transmittance of 60% or more in a visible light region of nm. 3. The cathode according to claim 1, wherein the cathode is formed by laminating a layer made of a low work function material of 4.0 eV or less and a transparent conductive layer, and the low work function material layer is in contact with the organic light emitting layer. The organic electroluminescent device according to claim 2, wherein 4. The low work function material layer has a thickness of 1 to 1
4. The organic electroluminescent device according to claim 3, wherein said organic electroluminescent device is in a range of 00 nm. 5. The organic electroluminescent device according to claim 3, wherein the low work function material layer is selected from a magnesium alloy and an aluminum alloy. 6. The cathode, wherein an interface layer in contact with an organic light emitting layer and a transparent conductive layer are laminated, wherein the interface layer is made of a fluoride or oxide of an alkali metal or an alkaline earth metal, 3. The organic electroluminescent device according to claim 2, wherein the thickness is in the range of 0.2 to 10 nm. 7. The organic electroluminescent device according to claim 3, wherein the transparent conductive layer is selected from indium and / or tin oxide or zinc oxide. 8. The organic electroluminescent device according to claim 2, wherein the anode is made of a metal having a work function of 4.6 eV or more. 9. The high work function metal layer wherein the anode is formed by laminating a high work function metal layer having a work function of 4.6 eV or more and a low resistance layer having a resistivity of 10 ⁻⁵ Ωcm or less. The organic electroluminescent device according to any one of claims 2 to 8, wherein is in contact with the organic light emitting layer. 10. The organic electroluminescent cell, wherein the cathode is provided on the insulating substrate side of the organic electroluminescent cell, the anode is provided on the transparent support side of the organic electroluminescent cell, and the anode is 400 to 80.
The organic electroluminescent device according to claim 1, wherein the organic electroluminescent device has a transmittance of 60% or more in a visible light region of 0 nm. 11. The organic electroluminescent device according to claim 10, wherein the anode is selected from indium and / or tin oxide or zinc oxide. 12. The low work function material layer, wherein the cathode is formed by laminating a low work function material layer having a work function of 4.0 eV or less and a low resistance layer having a resistivity of 10 ⁻⁵ Ωcm or less. The organic electroluminescent device according to any one of claims 10 to 11, wherein is in contact with an organic light emitting layer. 13. The film thickness of the low work function material layer is from 2 to
The organic electroluminescent device according to claim 12, wherein the range is 100 nm. 14. The organic electroluminescent device according to claim 12, wherein the low work function material is selected from a magnesium alloy and an aluminum alloy. 15. The film according to claim 15, wherein the cathode is formed by laminating an interface layer in contact with an organic light-emitting layer and a transparent conductive layer, wherein the interface layer is made of an alkali metal or alkaline earth metal fluoride or oxide. The organic electroluminescent device according to claim 10, wherein the thickness is in a range of 0.2 to 10 nm. 16. The organic electroluminescent device according to claim 1, wherein the insulating substrate is a glass substrate. 17. The organic electroluminescent device according to claim 1, wherein the insulating substrate is a silicon substrate. 18. The organic electroluminescent device according to claim 1, wherein said active matrix circuit portion is covered with an insulating layer. 19. The organic electroluminescent cell according to claim 1, wherein the outer surface is protected by a transparent insulating film.
9. The organic electroluminescent device according to any one of items 8 to 8. 20. The organic electroluminescent device according to claim 19, wherein the transparent insulating film is made of an inorganic oxide, an inorganic nitride, or a mixture thereof. 21. The organic electroluminescent device according to claim 19, wherein the transparent insulating film is made of a fluorine-containing polymer. 22. The organic electroluminescent device according to claim 1, wherein the transparent support is a glass substrate. 23. The organic electroluminescent device according to claim 1, wherein the luminescence conversion layer comprises a color filter. 24. The organic electroluminescent device according to claim 1, wherein the luminescence conversion layer comprises a fluorescence conversion layer containing a fluorescent dye. 25. The organic electroluminescent device according to claim 1, wherein a distance between the insulating substrate and the transparent support is in a range of 1 to 20 μm.