JPS63171878A - Sputtering device - Google Patents

Abstract

PURPOSE:To improve the deposition rate of a substance by sputtering and the utilization efficiency of a target, by providing plural targets obliquely to a substrate and other targets as a cathode formation. CONSTITUTION:The targets 102 and 103 are sputtered in a vacuum vessel 101 by using magnets 106 and 107 and high-frequency power sources 104 and 105, and the sputtered substances are deposited on the substrate 111. In such a sputtering device, the cathode is composed of the plural targets 102 and 103, and each target is inclined to the substrate surface and the other target. A gap is provided, as required, between the targets 102 and 103, and an earth electrode 109 is arranged in the gap. A high probability that the particles are obliquely sputtered by this method is utilized, the electron or ion is trapped by the earth electrode 109, and the deposition rate is increased. Besides, the particles sputtered away from the surface of the substrate 111 are deposited on the other target, and the utilization efficiency of the target is increased.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a sputtering apparatus capable of depositing a substance onto a substrate by sputtering.

[Conventional technology]

Traditionally, if you keep it.

1. A sputtering apparatus 2 in which the target and substrate surfaces are parallel as shown in FIG. 2, and an integrated target as shown in FIG. 3 have been used for the purpose of increasing the sputtering rate t-.

[Problems that the invention helps solve]

But in the traditional way.

In the case of 1, the sputtering rate is slow.

In case 2, it is difficult to achieve this if the target is made of a material that is difficult to mold.

In both cases, the disadvantage is that the target utilization efficiency is low, and in general, the amount of particles ejected from the target by sputtering depends on the angle of inclination from the normal to the target surface. Become. In particular, when making an alloy thin film by sputtering using an alloy target, such an exit angle distribution also has the disadvantage that it is difficult to create a uniform composition for each element. .

Therefore, the present invention solves these problems.
The purpose of this is to use a sputtering device that can deposit materials (by sputtering) by taking advantage of the fact that sputtered particles have a high probability of flying out from a direction perpendicular to the target surface to an inclined direction. An electrode at ground potential is placed between the depleted targets to trap electrons or ions, thereby increasing the deposition rate of cis-battering.

2. Increase the target utilization efficiency by attaching the sputtered particles ejected in directions other than the substrate surface to other targets.

3. By tilting the target with respect to the substrate surface, it is possible to control properties that depend on the incident angle with respect to the substrate surface or the exit angle of sputtered particles with respect to the target.

4. The target can be a flat plate, so there are no restrictions on the material.

The object of the present invention is to provide a sputtering apparatus that realizes the above-mentioned item 4.

Means for Solving Problem c] The sputtering apparatus of the present invention is an apparatus capable of depositing a substance on a substrate by sputtering, in which a plurality of targets are tilted to each other with respect to both the substrate surface and other targets. have a cathode structure that can be installed, have a spacing between these targets that allows an electrode at ground potential to be installed, and can attach an electrode at ground potential as necessary. It is characterized by

In the present invention, by tilting the target with respect to the gold substrate surface.

1. It is possible to increase the sputtering rate by taking advantage of the large number of particles sputtered in a direction tilted to the normal line of the target surface. 2. It is possible to selectively select sputtered particles at a certain emission angle. Since it can be deposited on a substrate, it is possible to suppress the compositional distribution that occurs when producing a thin alloy at from a single alloy target.

The advantage arises.

Additionally, when using targets tilted close to each other, unlike when using a single target, sputtered particles ejected from one target in a direction other than the substrate surface can be attached to the other target, increasing target usage efficiency. Can be done.

Furthermore, each target may be a flat plate.

Even targets with poor processability can be attached to the sputtering equipment.

[Implementation row 1] The effects of the present invention will be described by way of examples.

Two targets as shown in FIG.

Iron (F#) was sputtered using a high frequency power source.

The size of the target is 1 g) 10 cmXcm
It is. Sputtering was performed under the conditions shown in the table.

Table 1 Input power Q, 5KW7 A/-
f 7 pressure 1yyLTorr Distance between substrate and target center When the sputtering tray was arranged as shown in Figure 1 in 10 countries, the speed of the sputtering tray was 1005 m/min.

On the other hand, when using the conventional method of setting the target parallel to the substrate surface as shown in FIG. 2, the sputtering rate was 65% grooves per minute.

[Example 2] Binary alloy HdIP was used as the f target, and sputtering was performed in the same manner as in Example 1 using the sputtering apparatus of the present invention as shown in FIG. The target inclination angle θ shown in FIG. 1 was set to 600. FIG. 4 shows the relationship between the position on the substrate and the amount of Nd in the Nd1-alloy attached to the substrate. Furthermore, Md7! was manufactured using a conventional sputtering apparatus as shown in FIG. A similar diagram for an rg alloy thin film is shown in FIG. However, the amount of Nd in the target was 40 atoms. In this way, the composition distribution caused by the difference in the emission angle from the target can be suppressed.

〔Effect of the invention〕

As described above, according to the present invention, it is possible to increase the rate of depositing a substance by sputtering, increase the utilization efficiency of a target used for sputtering, and
Properties that depend on the incident angle of sputtered particles with respect to the substrate surface or the emission angle of sputtered particles can be controlled. Furthermore, since the target can be a flat plate, compared to conventional sputtering mW.

Another advantage is that a target made of a material with poor workability can be attached to the cathode.

[Brief explanation of the drawing]

FIG. 1 is a schematic diagram showing a cross section of a sputtering apparatus according to the present invention 101...-vacuum chamber 102...target 1031/target 104...high frequency power source 105...high frequency power source 106...magnet 107... Grinding wheel 108・Fist・Substrate electrode 109...Earth electrode 110...Substrate ゛111...Target inclination angle θ Fig. 2 is a schematic diagram showing a cross section of a sputtering apparatus using conventional rows 201...Vacuum chamber 202・1 target 203...magnet 204...high frequency power supply 205...substrate electrode 206...substrate Figure 3 is a schematic diagram showing a cross section of a sputtering apparatus using a conventional array aoi--molded into a ring shape targeted target 302-
-・Magnet 303...Earth electrode 304...Substrate electrode 305...Substrate FIG.
Figure 5 shows the relationship between the NdF deposited on the substrate, the amount of Nd in the alloy, and the position on the substrate.
FIG. 3 is a diagram showing the relationship between NdF deposited on a substrate, the amount of Nd in the alloy, and the position on the substrate. Applicant: Seiko Epson Co., Ltd. Agent, Attorney, Attorney, and 1 other person
t. Zu ω insult +m -to o
t. :X, Cc fraud g5'' figure

Claims (3)

[Claims] (1) A sputtering device for depositing a substance on a substrate by sputtering, characterized by having a cathode configuration in which a plurality of targets can be installed. (2) A sputtering apparatus according to claim 1, characterized in that the sputtering apparatus has a cathode configuration in which the targets forming the target group can be installed at an angle with respect to any of the other targets forming the target group. . (3) having an interval between the targets forming the target group that allows an electrode set to a ground potential to be installed;
The sputtering apparatus according to claim 1, wherein the electrode can be attached as required.