CN113667949A

CN113667949A - Magnetron sputtering device

Info

Publication number: CN113667949A
Application number: CN202110952580.4A
Authority: CN
Inventors: 匡友元; 张铢仓
Original assignee: Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
Current assignee: Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
Priority date: 2021-08-19
Filing date: 2021-08-19
Publication date: 2021-11-19
Anticipated expiration: 2041-08-19
Also published as: CN113667949B

Abstract

The present application provides a magnetron sputtering apparatus, comprising: a target and a magnet assembly. The magnetic assembly is arranged on one side of the target and comprises a first magnet, the first magnet is located at a first end portion of the magnetic assembly and is arranged corresponding to the end portion of the target, and the position of the first magnet is adjustable. According to the magnetron sputtering equipment, the first magnet is arranged at the position corresponding to the end part of the target material, the magnetic field intensity of the end part of the target material can be improved, so that a non-erosion area is reduced, the shape of the magnet assembly can be adjusted according to different sputtering requirements, and the magnetic field acting on the target material is adjusted.

Description

Magnetron sputtering device

Technical Field

The application relates to the technical field of magnetron sputtering, in particular to magnetron sputtering equipment.

Background

Magnetron sputtering is widely used in the manufacture of semiconductors, Liquid Crystal Displays (LCDs), Organic Light-emitting diodes (OLEDs), and the like.

A magnetron sputtering apparatus generally includes a target and a magnet disposed in correspondence with the target. During magnetron sputtering, since the end of the target is far from the magnet, the magnetic field strength applied to the end of the target is low, resulting in a low concentration of Plasma (Plasma) striking the end of the target or no Plasma striking the end of the target. These regions of low plasma concentration or no plasma bombardment are referred to as Non-Erosion (Non-Erosion) regions. In the non-erosion area, the target is sputtered and the kinetic energy is too low, so that no particles capable of forming a film on the target substrate fall back onto the target. When the sputtering rate of the material on the target is lower than the falling rate of the particles, the falling particles are accumulated on the surface of the target, and the subsequent sputtering rate is influenced, so that the film forming quality is influenced. On the other hand, the apparatus also contains self-carried foreign matters, and when the sputtering speed of the material is lower than the deposition speed of the foreign matters in the apparatus, the foreign matters are deposited on the target material, and the film forming quality is also influenced. Therefore, the existence of non-erosion zones becomes one of the pain points of the magnetron sputtering technique.

Disclosure of Invention

The application aims to provide a magnetron sputtering device capable of reducing a non-erosion area.

The present application provides a magnetron sputtering apparatus, comprising:

a target material; and

the magnet assembly is arranged on one side of the target and comprises a first magnet, the first magnet is located at a first end portion of the magnet assembly, the first magnet is arranged corresponding to the end portion of the target, and the position of the first magnet is adjustable.

In one embodiment, the magnet assembly further comprises a second magnet disposed on a side of the first magnet away from the end of the target, an orthographic projection of the second magnet on the target extending from the first end to the second end of the target, the second magnet and the first magnet being separated from each other in the first state; and/or in the second state, the second magnet is connected with the first magnet.

In one embodiment, the first magnet is disposed so that an extending direction thereof is perpendicular to a longitudinal direction of the target.

In one embodiment, the magnet assembly includes at least two first magnets spaced apart and extending between the first magnets and the end wall of the target, respectively.

In one embodiment, at least two of the first magnets are distant from each other in a direction pointing from the second magnet toward the end wall of the target.

In one embodiment, the target material is a planar target, and the maximum width of the first magnet is greater than the maximum width of the second magnet; or the target is a rotating target, and the maximum cross-sectional area of the first magnet in the direction perpendicular to the length direction of the target is larger than the maximum cross-sectional area of the second magnet in the direction perpendicular to the length direction of the target.

In one embodiment, the target is a planar target, the target includes multiple sub-targets, the multiple sub-targets are arranged along a length direction of the sub-targets, and a gap is formed between two adjacent sub-targets.

In an embodiment, the target includes a first sub-target and a second sub-target, the second sub-target is adjacent to the first sub-target, a first protruding portion is disposed at one end of the first sub-target, a second protruding portion is disposed at one end of the second sub-target, and the first protruding portion of the first sub-target and the second protruding portion of the second sub-target are disposed opposite to each other to form the notch.

In one embodiment, the extending direction of the second magnet intersects with the length direction of the target; or the extending direction of the second magnet is parallel to the length direction of the target.

In one embodiment, the magnet assembly further comprises a third magnet located at a second end of the magnet assembly, the third magnet being disposed in correspondence with the other end of the target, the position of the third magnet being adjustable.

According to the magnetron sputtering device, the first magnet is arranged at the position corresponding to the end part of the target material, so that the magnetic field intensity of the end part of the target material can be improved, and a non-erosion area is reduced. Because the requirement of the corresponding magnetic field intensity distribution may be different for different sputtering requirements, and the requirement of the magnetic field intensity distribution may also be different for different stages of sputtering.

Drawings

In order to more clearly illustrate the technical solutions in the present application, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.

Fig. 1 is a schematic structural diagram of a magnetron sputtering apparatus according to the present application.

Fig. 2 is a schematic top view of a first structure of a target of the magnetron sputtering apparatus of the present application.

Fig. 3 is a schematic top view of a second structure of a target of the magnetron sputtering apparatus of the present application.

Fig. 4 is a schematic top view of the magnet assembly and the target of the first embodiment of the magnetron sputtering apparatus of fig. 1 in a first state.

Fig. 5 is a schematic top view of the magnet assembly and the target of the magnetron sputtering apparatus of fig. 1 in a second state according to the first embodiment.

Fig. 6 is a schematic plan view of a magnet assembly and a target in a third form of a magnetron sputtering apparatus according to a second embodiment of the present invention.

Fig. 7 is a schematic top view of a magnet assembly and a target of a second embodiment of a magnetron sputtering apparatus according to the present application in a fourth state.

Fig. 8 is a schematic top view of a magnet assembly and a target of a third embodiment of the magnetron sputtering apparatus of fig. 1 in a fifth state.

Fig. 9 is a schematic top view of a magnet assembly and a target of a fourth embodiment of the magnetron sputtering apparatus of fig. 1 in a sixth state.

Detailed Description

The technical solution in the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application. It should be apparent that the described embodiments are only some embodiments of the present application, and not all embodiments. All other embodiments, which can be obtained by a person skilled in the art without making any inventive step based on the embodiments in the present application, are within the scope of protection of the present application.

In this application, unless expressly stated or limited otherwise, the first feature "on" or "under" the second feature may comprise the first and second features directly, or may comprise the first and second features not being directly connected but being in contact with each other by means of further features between them. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.

Embodiments of the present invention will be described below with reference to the drawings, but the present invention is not limited to the embodiments.

The magnetron sputtering device 100 can be used in the physical vapor deposition process of products such as semiconductors, LCDs, OLED displays and the like.

Referring to fig. 1, a magnetron sputtering apparatus 100 of the present application includes a vacuum processing chamber 10. The vacuum processing chamber 10 may be a box. An exhaust port 20 is opened at one end of the vacuum processing chamber 10 for exhausting air to form a vacuum environment. The other end of the vacuum processing chamber 10 is opened with an inlet 30 for introducing a processing gas for generating plasma. Examples of the treatment gas include: argon (Ar)₂) Or nitrogen (N)₂) And the like. The processing gas may be a single gas or a mixed gas of two or more gases. The gas inlet 30 and the gas outlet 20 may be disposed at both ends of the vacuum processing chamber 10, respectively.

The magnetron sputtering apparatus 100 includes a susceptor 40, a target 50, and a magnet assembly 60. The target 50 is disposed opposite to the stage 40. The magnet assembly 60 is disposed on a side of the target 50 away from the susceptor 40.

The carrier 40 is used for carrying the target substrate 200. The target substrate 200 shown in fig. 1 is a target to be sputtered by the magnetron sputtering apparatus 100, and is not a part of the magnetron sputtering apparatus 100. The susceptor 40 is connected to an anode (not shown). The stage 40 is provided with a transport device (not shown) capable of forming a film while passing the target substrate 200 over the target 50.

Examples of the material of the target 50 include a single element material such as molybdenum (Mo), aluminum (Al), tantalum (Ta), copper (Cu), titanium (Ti), and chromium (Cr), and a composite material composed of two or more elements such as GeSbTe and NiFe. The target 50 and the bearing table 40 are arranged at intervals to form a space S bombarded by the plasma P. The target 50 may be a planar target or a rotating target. The target 50 of the present embodiment is a planar target.

Alternatively, referring to fig. 2, due to the size limitation of the target 50, when performing magnetron sputtering, a plurality of sub-targets may be spliced to form the target 50. The target 50 includes a plurality of sub-targets arranged along a length direction of the sub-targets, and a gap 50a is formed between two adjacent sub-targets. Specifically, two notches 50a are formed between two adjacent segments of the target material, and the two notches 50a are respectively disposed opposite to each other in the longitudinal direction D1 of the target material 50. The shape of the notch 50a may be, but is not limited to, a "V" shape or a "U" shape. Specifically, the target 50 includes a first sub-target 51 and a second sub-target 52. In fig. 2, the sub-targets located at the end of the entire target 50 are taken as the first sub-targets 51, and the sub-target located in the middle of the entire target 50 is taken as the second sub-target 52, but the present application does not limit the positions of the first sub-targets 51 and the second sub-targets 52 as long as the two are adjacent. One end of the first sub-target 51 is provided with a first protruding portion 511, and both ends of the second sub-target 52 are provided with second protruding portions 521. The first projecting portion 511 at one end of the first sub-target 51 is disposed opposite to the second projecting portion 521 at one end of the adjacent second sub-target 52. The recesses on both sides of the first and

second protrusions

511 and 521 form notches 50 a. Referring to fig. 2, for the target 50 having the V-shaped notch 50a, the first protruding portion 511 and the second protruding portion 521 are both formed in a triangular shape, and the triangular tip of the adjacent first sub-target 51 and the triangular tip of the second sub-target 52 are disposed opposite to each other, forming the V-shaped notch 50 a. The triangular shape of the end portions of the first and second sub-targets 51 and 52 may be formed by chamfering the original target. Referring to fig. 3, for the target structure of the U-shaped notch 50a, the first protruding portion 511 and the second protruding portion 521 are both formed into a triangle-like shape with curved side edges, and the triangle-like shape of the first sub-target 51 is disposed opposite to the top end of the triangle-like shape of the second sub-target 52 to form the U-shaped notch 50 a.

In the prior art, multiple sub-targets in the target are tightly connected, fallen sputtering particles and foreign matters are easy to deposit in gaps between adjacent sub-targets, and the fallen sputtering particles and the foreign matters are difficult to remove because the gaps are too small. This application makes things convenient for plasma P to get into the sputter particle and the foreign matter of breach 50a bombardment deposit in the gap between adjacent sub-target through forming breach 50a between adjacent sub-target, can avoid sputter particle and foreign matter deposit, promotes the film forming effect.

Referring to fig. 4, the magnet assembly 60 is connected to a cathode (not shown). The process gas is bombarded by the magnet assembly 60, and a high-density plasma P can be formed. A base plate (not shown) may be provided on the side of the magnet assembly 60 remote from the target 50. The magnet assembly 60 is disposed on the base plate. The magnet assembly 60 includes a first magnet 61 and a second magnet 62. The first magnet 61 is located at a first end of the magnet assembly 60. The first magnet 61 is disposed corresponding to an end of the target 50, and the position of the first magnet 61 is adjustable. The second magnet 62 is disposed on a side of the first magnet 61 away from the end wall E of the target 50. An orthographic projection of the second magnet 62 on the target 50 extends from the first end to the second end of the target 50. The extending direction D2 of the second magnet 62 may be parallel to the longitudinal direction D1 of the target 50. Optionally, the magnet assembly 60 further comprises a third magnet 63, the third magnet 63 being located at a second end of the magnet assembly 60. The third magnet 63 is provided corresponding to the other end portion of the target 50, and the position of the third magnet 63 is adjustable. That is, the magnet assembly 60 includes first and

third magnets

61 and 63 at both ends, and a second magnet 62 in the middle. The first magnet 61 and the third magnet 63 are provided corresponding to both end portions of the target 50, respectively. It should be noted that the second magnet 62 may be formed by arranging and splicing a plurality of sub-magnets according to the length of the target 50 and the magnet assembly 60.

The position of the first magnet 61 can be adjusted within the range between the end of the second magnet 62 and the end wall E of the target 50. The position of the first magnet 61 needs to satisfy the following positional relationship regardless of the adjustment: at least part of the first magnet 61 is located on the side of the second magnet 62 close to the end wall E of the target 50, and the orthographic projection of the first magnet 61 on the target 50 does not extend beyond the end wall E of the target 50. The position of the first magnet 61 may be adjusted by adjusting the distance between the first magnet 61 and the second magnet 62, the inclination angle of the first magnet 61, and the like. The position adjustment range of the third magnet 63 is adjustable within the range between the other end of the second magnet 62 and the other end wall E of the target 50, as in the case of the first magnet 61, and a detailed description thereof will be omitted.

Since the first magnet 61 and the third magnet 63 can perform position adjustment, the magnetron sputtering apparatus 100 has a plurality of states. Hereinafter, several states of the magnetron sputtering apparatus 100 will be described.

Referring to fig. 4, fig. 4 shows a first state of the magnetron sputtering apparatus 100. In the first state, the second magnet 62 and the third magnet 63 are separated from the first magnet 61. Alternatively, the first magnet 61, the second magnet 62, and the third magnet 63 are all cubic. The first magnet 61 and the third magnet 63 are arranged so that the extending direction D3 intersects the extending direction D2 of the second magnet 62. Note that, in the case of a cubic or approximately cubic magnet, the extending direction is the longitudinal direction thereof.

Referring to fig. 5, fig. 5 shows a second state of the magnetron sputtering apparatus 100. In the second state, the second magnet 62 and the third magnet 63 are connected to the first magnet 61. Alternatively, the first magnet 61, the second magnet 62, and the third magnet 63 are all cubic. The first magnet 61 and the third magnet 63 are provided so that the extending direction D3 is perpendicular to the longitudinal direction D1 of the target 50 (i.e., the extending direction D2 of the second magnet 62), and form an "i" shaped magnet assembly 60. Accordingly, the strength of the magnetic field in the direction perpendicular to the longitudinal direction D1 of the target 50 is increased, the non-erosion area in the direction perpendicular to the longitudinal direction D1 of the target 50 can be reduced, and the magnetic field in the left-right direction can be compatible.

In the prior art, a magnetic field generated by the magnet assembly at the end of the target material is weaker, and a non-erosion area is easily formed. According to the magnetron sputtering apparatus of the application, the first magnet 61 is provided at a position corresponding to the end of the target 50, and the magnetic field strength at the end of the target 50 can be increased, thereby reducing the non-erosion area. Since the requirements for the magnetic field intensity distribution may be different for different sputtering requirements and the requirements for the magnetic field intensity distribution may also be different for different stages of sputtering, the present application can adjust the shape of the magnet assembly 60 according to different sputtering requirements by setting the position of the first magnet 61 to be adjustable, thereby adjusting the magnetic field acting on the target 50.

Referring to fig. 6 and 7, a magnetron sputtering apparatus 100 of a second embodiment of the present application is different from the magnetron sputtering apparatus 100 of the first embodiment in that:

the target 50 of the magnetron sputtering apparatus 100 of the second embodiment is a rotating target. A cavity 501 is formed inside the target 50, and the magnet assembly 60 is disposed in the cavity 501. The magnet assembly 60 includes at least two first magnets 61. At least two first magnets 61 are arranged at intervals and extend between the first magnets 61 and the end wall E of the target 50, respectively. The positions of the at least two first magnets 61 are adjustable. Although only two first magnets 61 are illustrated in fig. 6, the magnet assembly 60 may include more than two magnets to increase the magnetic field at the end of the rotating target in all directions.

As shown in fig. 6, in the third state, at least two first magnets 61 are distant from each other in a direction from the second magnets 61 toward the end wall E of the target 50. That is, at least two first magnets 61 are scattered toward the end wall E of the target 50 centering on the second magnet 62. The magnetic field range of the at least two first magnets 61 can radiate to the entire end of the target 50.

As shown in fig. 7, in the other state, at least two first magnets 61 are arranged randomly in a direction from the second magnet 61 toward the end wall E of the target 50.

Referring to fig. 8, a magnetron sputtering apparatus 100 of a third embodiment of the present application is different from the magnetron sputtering apparatus 100 of the first embodiment in that:

when the target material 50 is a planar target, the maximum width W1 of the first magnet 61 is greater than the maximum width W2 of the second magnet 62, and the maximum width W3 of the third magnet 63 is also greater than the maximum width W1 of the second magnet 62.

When the target 50 is a rotary target, the maximum cross-sectional area of the first magnet 61 in the direction perpendicular to the longitudinal direction D1 of the target 50 is larger than the maximum cross-sectional area of the second magnet 62 in the direction perpendicular to the longitudinal direction D1 of the target 50, and the maximum cross-sectional area of the third magnet 63 in the direction perpendicular to the longitudinal direction D1 of the target 50 is also larger than the maximum cross-sectional area of the second magnet 62 in the direction perpendicular to the longitudinal direction D1 of the target 50.

In one specific embodiment, the target material 50 of the magnetron sputtering apparatus 100 is a planar target and the second magnet 62 is a cube. The first magnet 61 and the third magnet 63 are cylindrical bodies, and the surfaces of the first magnet 61 and the second magnet 62 parallel to the target 50 are top surfaces, so that the diameter of the top surface of the cylindrical body is larger than the width of the top surface of the cubic body. In another specific embodiment, the target material 50 of the magnetron sputtering apparatus 100 is a rotating target and the second magnet 62 is a cube. The first magnet 61 and the third magnet 63 are spherical bodies. The maximum cross-sectional area of the sphere perpendicular to the length direction D1 of the target 50 is larger than the maximum cross-sectional area of the cube perpendicular to the length direction D1 of the target 50. Alternatively, in the fifth state, the first magnet 61, the second magnet 62, and the third magnet 63 may be arranged on the same straight line.

In the present embodiment, by providing the first magnet 61, the second magnet 62, and the third magnet 63 in shapes such that the first magnet 61 and the third magnet 63 are thicker than the second magnet 62, the magnetic field at the end of the target 50 can be further enhanced.

Referring to fig. 9, a magnetron sputtering apparatus 100 of a fourth embodiment of the present application is different from the magnetron sputtering apparatus 100 of the first embodiment in that:

the target 50 in the magnetron sputtering apparatus 100 of the fourth embodiment is a planar target. The extending direction D2 of the second magnet 62 intersects the longitudinal direction D1 of the target 50. In the sixth state, the first magnet 61, the second magnet 62, and the third magnet 63 form the "Z" -shaped magnet assembly 60. In the case where the extending direction D1 of the second magnet 62 is parallel to the longitudinal direction D1 of the target 50, and the linear distance between the first magnet 61 and the third magnet 63 is the same, the length of the second magnet 62 disposed obliquely is longer than the length of the second magnet 62 disposed parallel to the longitudinal direction D1 of the target 50, and macroscopically represents a larger magnetic field coverage area.

The foregoing provides a detailed description of embodiments of the present application, and the principles and embodiments of the present application have been described herein using specific examples, which are presented solely to aid in the understanding of the present application. Meanwhile, for those skilled in the art, according to the idea of the present application, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present application.

Claims

1. A magnetron sputtering apparatus, comprising:

a target material; and

2. The magnetron sputtering apparatus of claim 1 wherein the magnet assembly further comprises a second magnet disposed on a side of the first magnet away from the end of the target, an orthographic projection of the second magnet on the target extending from the first end to the second end of the target, the second magnet and the first magnet being spaced apart from each other in a first state; and/or in the second state, the second magnet is connected with the first magnet.

3. The magnetron sputtering apparatus according to claim 2, wherein the first magnet is disposed in such a manner that an extending direction is perpendicular to a longitudinal direction of the target.

4. The magnetron sputtering apparatus of claim 2 wherein the magnet assembly includes at least two first magnets, at least two of the first magnets being spaced apart and extending between the first magnets and the end walls of the target, respectively.

5. The magnetron sputtering apparatus of claim 4 wherein at least two of said first magnets are spaced apart from each other in a direction from said second magnet toward an end wall of said target.

6. The magnetron sputtering apparatus according to claim 2 wherein the target material is a planar target, and the maximum width of the first magnet is greater than the maximum width of the second magnet; or the target is a rotating target, and the maximum cross-sectional area of the first magnet in the direction perpendicular to the length direction of the target is larger than the maximum cross-sectional area of the second magnet in the direction perpendicular to the length direction of the target.

7. The magnetron sputtering apparatus according to any one of claims 1 to 6, wherein the target is a planar target, the target includes a plurality of sub-targets, a plurality of the sub-targets are arranged in a longitudinal direction of the sub-targets, and a gap is formed between two adjacent sub-targets.

8. The magnetron sputtering apparatus according to claim 7, wherein the target includes a first sub-target and a second sub-target, the second sub-target is adjacent to the first sub-target, one end of the first sub-target is provided with a first protruding portion, one end of the second sub-target is provided with a second protruding portion, and the first protruding portion of the first sub-target and the second protruding portion of the second sub-target are arranged opposite to each other to form the notch.

9. The magnetron sputtering apparatus according to any one of claims 1 to 6, wherein an extending direction of the second magnet intersects a length direction of the target; or the extending direction of the second magnet is parallel to the length direction of the target.

10. The magnetron sputtering apparatus of any of claims 1 to 6 wherein the magnet assembly further comprises a third magnet located at a second end of the magnet assembly, the third magnet being positioned in correspondence with another end of the target, the position of the third magnet being adjustable.