JP2008297577A - Magnetron sputtering device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a magnetron sputtering device having high target use efficiency, which is capable of forming a high density area of plasma up to the periphery of the outer edge of the target by expanding a magnetic field from a magnetic field forming unit to the outer circumferential side. <P>SOLUTION: In the magnetron sputtering device, its magnetic field forming unit is constituted of a second magnet and a first magnet, intensity of the magnetic field formed by the first magnet is higher than that of the magnetic field formed by the second magnet, and by separating a distance from a target surface to the magnetic pole surface of the second magnet longer than that to the magnetic pole surface of the first magnet, the magnetic field generated by the magnetic field forming unit can be expanded toward the outer circumferential side of the target. Thus, the high density area of plasma can be generated over or moved to the substantially entire surface including the periphery of the outer edge of the target, and the use efficiency of the target can be enhanced. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a magnetron sputtering apparatus that performs sputtering by forming a magnetic field on a target, and more particularly to a magnetron sputtering apparatus that has a wide erosion formation region of a target and high material utilization efficiency.

  Sputtering equipment forms thin films such as metals on the surface of glass, ceramics, plastics, metals, and other materials using a sputtering method. Optical information recording media, semiconductor devices, electrical and electronic components, and other various fields Is widely used as a film forming apparatus.

  These sputtering apparatuses are known to have various mechanisms. Among them, a magnetron sputtering apparatus that generates a magnetic field on a target and forms a high-density region of plasma near the target by this magnetic field is excellent in film formation efficiency. Since a high deposition rate can be obtained, it has become the mainstream of recent sputtering apparatuses.

  Here, an outline of a configuration of a general magnetron sputtering apparatus will be described with reference to FIG. The vacuum chamber 10 of the conventional magnetron sputtering apparatus 40 shown in FIG. 8 is connected to a vacuum pump, and an exhaust port 11 for exhausting the gas in the vacuum chamber 10, an inert gas such as argon, or a predetermined mixed gas The gas introduction path 12 for introducing the gas etc. is provided.

  One side of the vacuum chamber 10 is provided with an anode electrode 14 having a work holding part to which a work 13 such as a substrate can be attached, and a cathode electrode 16 is arranged at a position facing the anode electrode 14. The cathode electrode 16 is supported by a cathode housing 16 a including the magnetic field forming unit 20, and the target 15 can be placed on a flat holding surface on the cathode electrode 16.

  The cathode housing 16a is fixed to the cathode shield portion 10a of the vacuum chamber 10 via an insulating material (not shown). At this time, the target 15 installed on the holding surface of the cathode electrode 16 is exposed toward the inside of the vacuum chamber 10 from the opening of the cathode shield part 10a. In addition, a power source 19 is connected to the cathode electrode 16 via a cathode housing 16a, and a voltage can be applied between the electrodes by grounding the anode electrode 14 via the vacuum chamber 10.

  When the target 15 is circular, the magnetic field forming unit 20 in the cathode housing 16a fixes a cylindrical permanent magnet 22 at the center of a disk-shaped yoke 32 and an annular permanent magnet 23 around it. To form. The polarities of the permanent magnets 22 and 23 at this time are such that the north pole of the central permanent magnet 22 is on the target 15 side and the south pole of the surrounding permanent magnet 23 is on the target 15 side. As the permanent magnets 22 and 23, it is preferable to use rare earth magnets having a strong magnetic force such as FeNdB (iron / neodymium / boron) and CoSm (cobalt / samarium). Then, the magnetic field forming unit 20 is disposed close to the cathode electrode 16 so that the magnetic field generated by the permanent magnets 22 and 23 leaks onto the surface of the target 15. Furthermore, a cooling unit is provided in the normal cathode housing 16 a for flowing the cooling water 8 and cooling the target 15 via the cathode electrode 16. 8 and FIG. 1 to FIG. 7 to be described later schematically represent lines of magnetic force generated by the magnetic field forming unit.

  In order to operate the magnetron sputtering apparatus 40 to form a predetermined thin film on the surface of the workpiece 13, first, the predetermined workpiece 13 is used as the anode electrode 14 and the predetermined target 15 is used as the holding surface of the cathode electrode 16. Install. Next, after the air in the vacuum chamber 10 is exhausted through the exhaust port 11, a predetermined gas is introduced from the gas introduction path 12 to make the inside of the vacuum chamber 10 a low-pressure gas atmosphere.

  Next, a predetermined power is applied between the cathode electrode 16 and the anode electrode 14 by the power source 19. Thereby, glow discharge is generated between the cathode electrode 16 and the anode electrode 14, and plasma is generated in the vacuum chamber 10. The generated plasma is confined and converged on the surface of the target 15 by the magnetic field from the magnetic field forming unit 20 to form a high-density region of the plasma. The positive ions in the plasma are attracted toward the cathode electrode 16 that is the cathode, and collide with the surface of the target 15 disposed on the cathode electrode 16. As a result of this collision, atoms of the target 15 are ejected and adhere to and deposit on the surface of the work 13 held on the anode electrode 14 side. Thereby, a predetermined thin film is formed on the surface of the workpiece 13.

  As described above, the magnetron sputtering apparatus forms a high-density region of plasma on the surface of the target 15 and efficiently collides positive ions in the plasma with the target 15. Obtainable.

  As an example of the magnetron sputtering apparatus as described above, in the device disclosed in [Patent Document 1] below, a magnetic field forming unit having a special structure is designed, and a strong toroidal magnetic field is formed on the surface of the target to form a film formation efficiency. Is further improved.

  However, since the magnetron sputtering apparatus concentrates and sputtering only a narrow region in the plane of the target 15 located under the high density region of the plasma, this region is selectively cut and a groove called erosion is partially formed. As a result, the target 15 cannot be used in a short time. That is, the magnetron sputtering apparatus is excellent in film formation efficiency and has a high film formation speed, but on the other hand, only a specific part of the target 15 is used for sputtering, and the utilization efficiency of the target 15 is extremely poor. Yes.

  With respect to this problem, in the invention disclosed in the following [Patent Document 2], a magnetic field forming unit (first magnet and second magnet in Patent Document 2) smaller than the target size is a predetermined distance from the center of the support base. A mechanism for shifting the magnetic field forming portion eccentrically about the center of the support base is provided. With this mechanism, the invention disclosed in [Patent Document 2] makes it possible to change the formation position of the high-density region of the plasma, and prevents the target from being locally scraped, thereby improving the utilization efficiency of the target. I am trying.

  In the invention disclosed in [Patent Document 3] below, the magnetic force and arrangement position of each of the permanent magnets constituting the magnetic field forming unit (the yoke-type permanent magnet in Patent Document 3) and the magnetic pole surface of the magnetic field forming unit are targeted. As in [Patent Document 2], the formation position of the high-density region of the plasma is changed so as to improve the utilization efficiency of the target by disposing it with respect to the surface.

Japanese Utility Model Publication No. 05-20303

Japanese Patent Laid-Open No. 05-179441 JP 2004-143594 A

  However, in the invention disclosed in [Patent Document 2], the formation position of the plasma high-density region is inside the magnetic field forming unit 20, and even if the magnetic field forming unit 20 is rotated, the periphery of the outer edge portion of the target 15 is It cannot be used for sputtering.

  In the invention disclosed in [Patent Document 3], the magnetic field formed on the surface of the target is expanded outward by providing a difference in the magnetic force of the permanent magnets constituting the magnetic field forming unit. This is insufficient to use the periphery of the part for sputtering. In addition, the magnetic pole surface of the magnetic field forming part is arranged to be inclined with respect to the target surface, or the height of the magnet constituting the magnetic field forming part is inclined so that the magnetic field formed on the surface of the target is around the periphery of the target. However, the permanent magnet constituting the magnetic field forming portion, particularly the permanent magnet located at the center of the magnetic field forming portion, is separated from the target, and the strength of the magnetic field formed on the surface of the target is reduced and sputtering is performed. There is a risk that the efficiency of the system will deteriorate.

  For this reason, a magnetron sputtering device with high target utilization efficiency that can spread the magnetic field from the magnetic field forming part to the outside without reducing the magnetic field intensity, and can form a high density region of plasma to the periphery of the outer edge of the target. Realization of is desired.

  In many cases, the cathode housing 16 a is provided with a cooling unit for flowing the cooling water 8 to cool the target 15 via the cathode electrode 16. Therefore, in order to dispose the magnetic field forming unit close to the target 15, it is necessary to install the magnetic field forming unit in the cooling water 8 in the cooling unit, that is, in the cathode housing 16a. However, when the magnetic field forming portion is installed in the cooling water 8, rust is generated in the magnetic field forming portion, and iron or the like resulting from the rust may accumulate in the cooling water channel or the like and hinder the flow of the cooling water. In particular, rare earth magnets such as FeNdB and CoSm that are often used as permanent magnets in magnetic field forming parts are extremely rusting. There is a need. This is not preferable in terms of production efficiency and cost.

  Further, as in the inventions disclosed in [Patent Document 2] and [Patent Document 3], those having a mechanism driven by the magnetic field forming unit have a packing as a waterproof measure due to long-term friction of the drive shaft portion. There is a possibility that problems such as wear and leakage of cooling water may occur, and further improvement is desired.

  The present invention has been made in view of the above circumstances, and expands the magnetic field from the magnetic field forming part to the outer peripheral side, and can form a high-density plasma region up to the periphery of the outer edge of the target. An object of the present invention is to provide a magnetron sputtering apparatus having a high height.

The present invention
(1) In a magnetron sputtering apparatus,
A cathode electrode 16 having a flat holding surface on which a target 15 made of a predetermined material is held;
An anode electrode 14 disposed opposite to the cathode electrode 16 with a predetermined gap on the holding surface side;
A first magnet (first magnet 31) disposed on the opposite side of the cathode electrode 16 from the holding surface and having a magnetic axis in a direction perpendicular to the holding surface, and around the first magnet A second magnet (second magnet 33) that is spaced apart and has a magnetic axis whose magnetic pole direction is opposite to that of the first magnet is provided, and the magnetic field is generated by the first magnet and the second magnet. Magnetic field forming portions 30a to 30f for forming
And having a configuration
Providing magnetron sputtering devices 50a to 50g, wherein the first magnet is configured such that the magnetic field strength is stronger than the second magnet and the distance between the magnetic pole surface and the holding surface is shortened. Thus, the above problem is solved.
(2) The magnetic field forming portions 30b, 30c, 30e, and 30f are moved along the holding surface while the magnetic axes are maintained in a direction perpendicular to the holding surface. The above-mentioned problems are solved by providing the magnetron sputtering devices 50b, 50c, 50e, 50f, and 50g described above.
(3) The first magnet includes a first magnetic pole surface that is shorter than the second magnet and a second magnetic pole surface that is longer than the first magnetic pole surface. By providing the above-described magnetron sputtering apparatus 50d to 50g, which is characterized by having the above-described configuration, the above-described problems are solved.
(4) The cathode electrode 16 is disposed on the opposite side of the holding surface of the cathode electrode 16 from the periphery of the first magnet or, if the first magnet is movable, around the moving region thereof. The above-mentioned problem is solved by providing the magnetron sputtering apparatus 50g according to any one of the above (1) to (3), characterized in that it has a cooling means for cooling 16.

The magnetron sputtering apparatus according to the present invention is configured as described above,
(1) The magnetic field from the magnetic field forming part can be spread outward, and a high-density region of plasma can be formed up to the periphery of the outer edge part of the target. As a result, the periphery of the outer edge of the target can also be used for sputtering, so that the efficiency of target utilization can be improved.
(2) The second magnet located outside the magnetic field forming unit is arranged farther from the target than the first magnet located inside. Therefore, a magnetic field formation part can be arrange | positioned outside a cooling part by providing a cooling part in the space. As a result, it is possible to reduce the cost of waterproofing measures for the cooling unit and rust prevention measures for the magnetic field forming unit, and to reduce maintenance work for the cooling unit and the magnetic field forming unit.

  Embodiments of a magnetron sputtering apparatus according to the present invention will be described with reference to the drawings. FIG. 1 is a schematic configuration diagram of a first embodiment of a magnetron sputtering apparatus according to the present invention. FIG. 2 is a schematic configuration diagram of a second embodiment of the magnetron sputtering apparatus according to the present invention. FIG. 3 is a schematic configuration diagram of a modification of the second embodiment of the magnetron sputtering apparatus according to the present invention. FIG. 4 is a schematic configuration diagram of a third embodiment of the magnetron sputtering apparatus according to the present invention. 5 and 6 are schematic configuration diagrams of a modification of the third embodiment of the magnetron sputtering apparatus according to the present invention. FIG. 7 is a schematic configuration diagram of a fourth embodiment of the magnetron sputtering apparatus according to the present invention. The portions other than those related to the magnetic field forming unit of each embodiment shown here are basically the same as those of the prior art shown in FIG. The same members as those in the prior art are denoted by the same reference numerals. Further, in FIGS. 1 to 7, the magnetic poles on the target 15 side of the first magnets 31 and 31 c are described as N poles, and the magnetic poles on the target 15 side of the second magnets 33 are described as S poles. Also good.

  In FIG. 1, the schematic block diagram of the magnetron sputtering apparatus 50a of the 1st form which concerns on this invention is shown. In the magnetron sputtering apparatus 50a according to the present invention, the magnetic field forming unit 30a is installed in the vicinity of the disk-shaped target 15 below the cathode electrode 16 in the cathode housing 16a. The cathode housing 16a also serves as a cooling unit for the target 15. The cooling water 8 is supplied from the water supply pipe 8a into the cathode housing 16a and discharged from the drain pipe 8b, so that the inside of the cathode housing 16a is cooled with the cooling water 8. The target 15 is allowed to flow at a predetermined flow rate while being filled, and the target 15 is cooled via the cathode electrode 16.

  The magnetic field forming portion 30 a is arranged so as to follow the outer periphery of the yoke 32, a disc-shaped yoke 32 having a diameter substantially equal to that of the target 15, a columnar first magnet 31 disposed at a substantially central portion of the yoke 32. And an annular second magnet 33.

  The magnetic axes of the first magnet 31 and the second magnet 33 are oriented in a direction perpendicular to the surface of the target 15, and the directions of the magnetic poles of the first magnet 31 and the second magnet 33 are opposite to each other. . In addition, the strength of the magnetic field formed by the first magnet 31 and the second magnet 33 is different, and the strength of the magnetic field formed by the first magnet 31 is higher than the strength of the magnetic field formed by the second magnet 33 by a predetermined amount. As described above, the material, composition, shape, and the like of the first magnet 31 and the second magnet 33 are appropriately selected. Furthermore, the height dimension of the second magnet 33 is set lower than the height dimension of the first magnet 31, and the magnetic pole surface of the second magnet 33 is separated from the magnetic pole surface of the first magnet 31 when viewed from the target 15 surface. It becomes the position. The difference in the position of the magnetic pole surface between the second magnet 33 and the first magnet 31 may be formed by changing the height of the magnet used as described above, but is formed by providing the yoke 32 with irregularities. Alternatively, both of these methods may be combined.

  The lines of magnetic force (broken lines in FIG. 1) generated by the magnetic field forming unit 30a from the magnetic pole on the target 15 surface side of the first magnet 31 to the magnetic pole on the target 15 surface side of the second magnet 33 across the target 15 surface. Converge. At this time, the strength of the magnetic field formed by the first magnet 31 is stronger than the strength of the magnetic field formed by the second magnet 33, and the height position of the second magnet 33 is higher than the height position of the first magnet 31. Since the magnetic field lines are low, the generated magnetic field lines greatly spread toward the outer peripheral side of the target 15. Accordingly, the magnetic field generated by the magnetic field forming unit 30a also spreads toward the outer peripheral side of the target 15, and a high-density plasma region can be formed around the outer edge of the target. For this reason, many positive ions in the plasma also collide with the periphery of the outer edge of the target 15, and the erosion formation region is dispersed to improve the utilization efficiency of the target 15. In addition, these things appear especially remarkably when the target 15 is a disk shape.

  Next, FIG. 2 shows a schematic configuration diagram of a magnetron sputtering apparatus 50b according to the second embodiment of the present invention. A shaft hole having a predetermined diameter is formed at a position substantially the same as the center axis of the target 15 at the bottom of the cathode housing 16a of the magnetron sputtering apparatus 50b according to the present invention, and the rotating shaft 34 is movable in the shaft hole. It is inserted in the state. At this time, a waterproof measure such as packing (not shown) is applied to the shaft hole to prevent leakage of the cooling water 8 flowing in the cathode housing 16a. The lower end of the rotating shaft 34 is connected to a driving device 36 for rotating the rotating shaft 34. In addition, the drive device 36, the rotating shaft 34, and the part related to these correspond to the moving means of the magnetic field formation part 30b.

  A magnetic field forming unit 30 b having a configuration equivalent to that of the magnetic field forming unit 30 a and having an outer dimension smaller than that of the target 15 is fixed to the upper end of the rotating shaft 34. At this time, the center of the magnetic field forming unit 30 b and the center of the rotating shaft 34 are shifted by a predetermined distance, and the magnetic field lines A outside the magnetic field forming unit 30 b are installed at positions where they are applied to the outer edge of the target 15.

  Here, when the drive device 36 is operated, the rotating shaft 34 rotates with it. When the rotating shaft 34 rotates, the magnetic field forming unit 30b maintains the direction of the magnetic axis of the first magnet 31 and the second magnet 33, and is substantially parallel to the holding surface of the cathode electrode 16 below the cathode electrode 16. It rotates eccentrically by a distance shifted from the center of the rotating shaft 34. The position of the magnetic field formed on the surface of the target 15 is also moved by the eccentric rotational movement of the magnetic field forming unit 30b, and the formation position of the high-density region of plasma is also moved accordingly. In the magnetic field forming part 30b as well as the magnetic field forming part 30a, the magnetic field formed by the magnetic field forming part 30b spreads toward the outer peripheral side of the target 15, and this rotates eccentrically, so that the high-density region of the plasma It moves over almost the entire surface including the periphery of the outer edge. For this reason, the position of the target 15 (erosion formation region) where the positive ions in the plasma collide and are scraped is further dispersed, and the utilization efficiency of the target 15 is further improved.

  Next, FIG. 3 shows a schematic configuration diagram of a magnetron sputtering apparatus 50c which is a modification of the second embodiment according to the present invention. In the magnetron sputtering apparatus 50c according to the present invention, the center of the yoke 32 constituting the magnetic field forming unit 30c and the center of the rotating shaft 34 are substantially the same at the upper end of the rotating shaft 34 constituting the moving means by the magnetic field forming unit 30c. So that it is fixed.

  The magnetic field forming unit 30c includes a disk-shaped yoke 32 having a diameter substantially equal to that of the target 15, and an annular second magnet 33 disposed along the outer periphery of the yoke 32, and further includes a second magnet. The first magnet 31 is disposed inside the 33 at a position away from the center of the yoke 32 by a predetermined distance. The relationship between the first magnet 31 and the second magnet 33, such as the direction of the magnetic pole, the strength of the magnetic field to be formed, and the position of the magnetic pole surface, is the same as that of the magnetic field forming unit 30a.

  Here, when the drive device 36 is operated, the rotating shaft 34 rotates with it. When the rotating shaft 34 rotates, the magnetic field forming unit 30c rotates under the cathode electrode 16 substantially parallel to the holding surface of the cathode electrode 16 while maintaining the directions of the magnetic axes of the first magnet 31 and the second magnet 33. To do. At this time, the first magnet 31 arranged with a predetermined distance shifted from the center of the yoke 32 rotates eccentrically by a distance substantially shifted from the center of the rotating shaft 34, and the eccentric rotational motion of the first magnet 31. As a result, the formation position of the high-density region of the plasma formed on the surface of the target 15 moves. In addition, since the magnetic field formed by the magnetic field forming unit 30c extends toward the outer peripheral side of the target 15 in the same manner as the magnetic field forming unit 30a, the high-density region of the plasma around the outer edge of the target 15 is the same as the magnetic field forming unit 30a. It moves over almost the entire surface, and the utilization efficiency of the target 15 is thereby improved.

  Next, FIG. 4 shows a schematic configuration diagram of a magnetron sputtering apparatus 50d according to a third embodiment of the present invention. The magnetron sputtering apparatus 50d according to the present invention has substantially the same configuration as the magnetron sputtering apparatus 50a, but the shape of the first magnet 31c of the magnetic field forming unit 30d is different from that of the first magnet 31.

  The first magnet 31c of the magnetic field forming unit 30d is disposed substantially at the center on the yoke 32, and is disposed on the columnar first magnet lower part 31b having the second magnetic pole surface and the first magnet lower part 31b, and the second And a cylindrical first magnet upper portion 31a having a first magnetic pole surface having an area smaller than that of the first magnetic pole surface.

  By the way, in order to strengthen the magnetic field for forming the high-density region of plasma, it is necessary to increase the amount of magnetic flux emitted from the magnetic field forming part. For this purpose, it is effective to increase the magnetic pole area of the first magnet 31. However, when the magnetic pole area of the first magnet 31 is increased, the area of the portion where the high-density region of the plasma located above the first magnet 31 is not formed increases, and in particular has a moving means for rotating the magnetic field forming portion. Then, the utilization efficiency of the center part of the target 15 will fall significantly. Further, if the magnetic pole area of the magnet used for the first magnet 31 is reduced, the amount of magnetic flux generated is reduced, so the strength of the magnetic field is reduced and the sputtering rate is reduced.

  However, the magnetic pole area of the first magnet upper part 31a close to the target 15 can be reduced by arranging magnets having different magnetic pole areas from the yoke 32 side in order from the larger one like the first magnet 31c of the magnetic field forming unit 30d. While maintaining, the area of the first magnet 31c can be increased. As a result, a strong magnetic field can be formed as a whole of the first magnet 31c without reducing the utilization efficiency of the central portion of the target 15. Further, the magnetic flux is also emitted from the step portion of the first magnet lower portion 31b having a large magnetic pole area, and spreads toward the outer peripheral side of the target 15 together with the magnetic flux from the first magnet upper portion 31a. 15 occurs over almost the entire surface including the periphery of the outer edge portion, and thus the utilization efficiency of the target 15 can be improved. In addition, the shape of the first magnet upper part 31a and the first magnet lower part 31b is not limited to a cylinder, and may be a truncated cone shape. Further, if magnets having different magnetic forces are used for the first magnet upper part 31a and the first magnet lower part 31b, respectively, and bonded to form the first magnet 31c, the degree of freedom of the magnetic field formed by the first magnet 31c is increased. It can be expanded.

  Furthermore, the magnetron sputtering devices 50e and 50f shown in FIGS. 5 and 6 in which the configuration of the first magnet 31c is applied to the configuration of the magnetron sputtering devices 50b and 50c described above are strong in strength due to the first magnet 31c having a large magnetic pole area. Since the magnetic field can be rotated on the target 15, it is possible to move the high-density region of the plasma over a wider range, and the utilization efficiency of the target 15 can be further improved.

  In addition, although it is preferable that the height of the 1st magnet lower part 31b is equivalent to the 2nd magnet 33, it is not necessary to specifically limit to this. In the above example, the first magnet 31c has a two-stage example. However, the first magnet 31c need not be limited to two stages, and the outer dimension (the magnetic pole area) of the one positioned below the outer dimension (magnetic pole area) If the magnetic pole area is smaller, the number of stages may be three, four, five, or any other number.

  Next, FIG. 7 shows a schematic configuration diagram of a magnetron sputtering apparatus 50g according to the fourth embodiment of the present invention. In the magnetron sputtering apparatus 50g according to the present invention, a cathode housing 16b having a cooling water channel 8c through which the cooling water 8 can flow is provided below the cathode electrode 16, and a magnetic field forming unit, a moving unit thereof, a cooling unit (cooling unit), Are separated. Although FIG. 7 shows an example using the moving means and the magnetic field forming unit 30b, any configuration of the magnetic field forming units 30a to 30f may be used.

  As described above, in the magnetic field forming units 30 a to 30 f, the height of the second magnet 33 disposed along the outer periphery of the yoke 32 is the same as the height of the first magnets 31 and 31 c disposed inside the second magnet 33. Lower than that. Therefore, even if the magnetic field forming units 30a to 30f are arranged so that the first magnets 31 and 31c are close to the cathode electrode 16, the first magnets 31 and 31c are located outside the moving region of the first magnets 31 and 31c. There is a space corresponding to the difference in height between the second magnet 33 and the second magnet 33. A cooling water channel 8c for cooling water 8 is provided in a space between the cathode electrode 16 and the second magnet 33 outside the moving region of the first magnets 31 and 31c so as to surround the moving region of the first magnets 31 and 31c. If the second magnet 33 or the moving region of the second magnet 33 is positioned under 8c, the magnetic field forming units 30a to 30f are placed in the cooling unit while the magnetic field forming units 30a to 30f are arranged close to the target 15. It becomes possible to install outside. When the magnetron sputtering apparatus has no moving means, there is no moving area for the first magnets 31 and 31c, and therefore the cooling water channel 8c may be provided so as to surround the first magnets 31 and 31c.

  If the magnetic field forming units 30a to 30f are arranged outside the cooling unit as described above, the waterproofing measures and the structure of the cooling unit can be simplified, and the second magnet 33 and the first of the magnetic field forming units 30a to 30f can be used. There is no need to take rust prevention measures on the magnets 31, 31c, etc., and the process can be simplified and the cost for this process can be reduced. Furthermore, by disposing the magnetic field forming units 30a to 30f outside the cooling unit, it is possible to improve the operation reliability of the moving unit, reduce the maintenance work of the magnetic field forming units 30a to 30f and the moving unit, and the like.

  From the above, according to the magnetron sputtering apparatus according to the present invention, the magnetic field forming units 30a to 30f are constituted by the second magnet 33 and the first magnets 31 and 31c arranged inside the second magnet 33, Furthermore, the strength of the magnetic field formed by the first magnets 31, 31 c is stronger than the strength of the magnetic field formed by the second magnet 33, and the distance from the target 15 surface to the magnetic pole surface of the second magnet 33 is the magnetic pole of the first magnet 31. By separating the first magnet 31 from the surface, the magnetic field generated by the magnetic field forming units 30 a to 30 f can be expanded toward the outer peripheral side of the target 15 while being disposed close to the target 15. This makes it possible to generate or move a high-density plasma region over almost the entire surface including the periphery of the outer edge of the target 15, thereby dispersing the erosion formation positions and improving the utilization efficiency of the target 15. be able to.

  In the above embodiment, an example in which the target 15 is circular has been shown. However, when the target 15 has a square shape, the magnetic field forming units 30a to 30f are also formed into a square shape, and the magnetic field forming units 30a to 30f are replaced with each other. By moving or swinging in the direction parallel to the surface of the target 15, the utilization efficiency of the target 15 can be similarly improved.

  As the first magnets 31 and 31c and the second magnet 33, it is preferable to use rare earth magnets such as FeNdB and CoSm having a strong magnetic force as described above, but ferrite magnets and other known permanent magnets are used. Can do. Further, if both or one of the first magnets 31 and 31c and the second magnet 33 is an electromagnet, it is possible to electrically control the strength of the magnetic field and the extent of the magnetic field for forming a high density region of plasma. It becomes.

  Further, the end surfaces of the first magnets 31 and 31c are preferably circular, and the second magnet 33 is preferably annular. However, it is not particularly limited to this, and polygons, ellipses, rods, radial shapes, etc. The magnetic field to be formed may be optimized as an arbitrary shape. Moreover, if the 2nd magnet 33 is comprised by arrange | positioning a some magnet along the outer periphery of the yoke 32, the 2nd magnet 33 can be formed using a comparatively small magnet with easy shaping | molding. Furthermore, the present invention can be modified and implemented without departing from the gist of the present invention.

It is a schematic block diagram of the 1st form of the magnetron sputtering apparatus which concerns on this invention. It is a schematic block diagram of the 2nd form of the magnetron sputtering device which concerns on this invention. It is a schematic block diagram of the modification of the 2nd form of the magnetron sputtering apparatus which concerns on this invention. It is a schematic block diagram of the 3rd form of the magnetron sputtering device which concerns on this invention. It is a schematic block diagram of the modification of the 3rd form of the magnetron sputtering apparatus which concerns on this invention. It is a schematic block diagram of the modification of the 3rd form of the magnetron sputtering apparatus which concerns on this invention. It is a schematic block diagram of the 4th form of the magnetron sputtering device which concerns on this invention. It is a schematic block diagram of the conventional magnetron sputtering apparatus.

Explanation of symbols

8c Cooling water channel
10 Vacuum chamber
15 Target
16 Cathode electrode
16a, 16b cathode housing
30a-30f Magnetic field forming part
31, 31c 1st magnet
31a Upper part of first magnet
31b 1st magnet lower part
32 York
33 Second magnet
34 Rotating shaft
36 Drive unit
50a-50g magnetron sputtering equipment

Claims (4)

In magnetron sputtering equipment,
A cathode electrode having a flat holding surface on which a target made of a predetermined material is held;
An anode electrode disposed opposite the cathode electrode with a predetermined gap on the holding surface side;
A first magnet disposed on a side opposite to the holding surface of the cathode electrode and having a magnetic axis in a direction perpendicular to the holding surface; and a first magnet having a magnetic axis spaced apart from the first magnet. A magnetic field forming unit that includes a second magnet having a magnetic axis with a magnetic pole direction opposite to the first magnet, and forms a magnetic field with the first magnet and the second magnet;
And having a configuration
A magnetron sputtering apparatus characterized in that the first magnet has a stronger magnetic field strength than the second magnet, and the distance between the magnetic pole surface and the holding surface is shorter. The magnetron according to claim 1, further comprising moving means for moving the magnetic field forming portion along the holding surface in a state where the magnetic axes are maintained in a direction perpendicular to the holding surface. Sputtering equipment. The first magnet has a first magnetic pole surface whose distance from the holding surface is shorter than that of the second magnet, and a second magnetic pole surface that is longer than the first magnetic pole surface. The magnetron sputtering apparatus according to claim 1 or 2, wherein the magnetron sputtering apparatus is provided. Cooling that cools the cathode electrode by being arranged on the opposite side of the cathode electrode from the holding surface, around the first magnet, or around the moving area when the first magnet is movable. The magnetron sputtering apparatus according to any one of claims 1 to 3, wherein the magnetron sputtering apparatus has means.

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