TW201608044A - Sputter deposition apparatus and method for coating a substrate by rotary target assemblies in two coating regions and use thereof - Google Patents

Abstract

A sputter deposition apparatus for coating a substrate is provided. The sputter deposition apparatus includes a first and a second cathode assembly adapted for generating one or more plasma regions in a first coating region, and a third and a fourth cathode assembly adapted for generating one or more plasma regions in a second coating region. The first, second, third and fourth cathode assemblies include a first, second, third and fourth magnet assembly, respectively. The first magnet assembly has a first principal plane forming a first angle with a first reference plane. The second magnet assembly has a second principal plane parallel to the first principal plane. The third magnet assembly has a third principal plane forming a second angle with a second reference plane. The fourth magnet assembly has a fourth principal plane parallel to the third principal plane.

Description

Sputter deposition apparatus and method for coating a substrate in two coating regions with a rotating target assembly and use thereof

Some embodiments are related to layer deposition from a target sputtering. Some embodiments are particularly concerned with sputtering multiple layers on a large area substrate. Some embodiments are particularly concerned with static deposition processes. Some embodiments are particularly directed to a method of coating a substrate in a first coating zone and a separate second coating zone, particularly a sputtering target material on the substrate.

In many applications, it is desirable to deposit a multilayer film on a substrate, such as a glass substrate. Such substrates are typically coated in a plurality of different chambers of a coating apparatus. Such substrates can be coated in a vacuum using vapor deposition techniques.

Some methods are known for depositing a material on a substrate. For example, the substrate can be coated via a physical vapor deposition (PVD) process, a chemical vapor deposition (CVD) process, or a plasma enhanced chemical vapor deposition (PECVD) process, or the like. The process is carried out in a process unit or process chamber in which the substrate to be coated is located. A deposition material is provided into the device. A variety of materials and their oxides, nitrides, carbides can be used for deposition on substrates. The coating material can be used in various applications and various technical fields. For example, substrates for displays are typically coated by a physical vapor deposition process. Further applications include insulating panels, organic light emitting diode panels, substrates with thin film transistors, color filters or the like.

For a physical vapor deposition process, the deposited material can be present in the target in a solid form. The target material is bombarded with the energized particles, and the atoms of the target material are ejected from the target material, for example, the material to be deposited. The atoms of the target material are deposited on a substrate to be coated. In a physical vapor deposition process, the sputter material, such as the material to be deposited on the substrate, can be configured in a number of different ways. For example, the target may be made of a material to be deposited, or have a backing element to which the material to be deposited is attached. The target comprising the material to be deposited is carried or fixed at a predetermined location in a deposition chamber. In the case of using a rotatable target, the target is attached to a rotating shaft, or a connecting element connects the shaft and the target.

Sputtering can be performed by magnetron sputtering in which a magnetic component is used to confine the plasma to improve sputtering conditions. Thereby, the limited plasma can also be used to adjust the particle distribution of the material to be deposited on the substrate. Plasma distribution, plasma characteristics, and other deposition parameters need to be controlled to achieve the desired layer deposition on the substrate.

For example, it is desirable to have a uniform layer with specific layer properties, which is especially important for large area deposition systems, such as for manufacturing displays on large area substrates. Furthermore, for static deposition processes where the substrate does not move continuously through the deposition zone, uniformity and process stability are particularly difficult to achieve.

Accordingly, in view of the ever-increasing demand for the manufacture of large-scale photovoltaic devices and other devices, process uniformity and/or stability needs to be further improved.

According to an embodiment, a sputter deposition apparatus for coating a substrate is provided. The sputter deposition apparatus has two or more coated areas for coating the substrate. The sputter deposition apparatus includes a first substrate guiding system for guiding the substrate to a first coating area, wherein the first substrate guiding system defines a first substrate conveying direction. The sputter deposition apparatus further includes a second substrate guiding system for guiding the substrate to a second coating area, and the second substrate guiding system defines a second substrate conveying direction. The second substrate transport direction and the first substrate transport direction are the same or different. The sputter deposition apparatus further includes a first cathode assembly adapted to generate one or more plasma regions in the first coating region; a second cathode assembly adapted to generate one or more of the first coating regions a plasma region; a third cathode assembly adapted to produce one or more plasma regions in the second coating region; and a fourth cathode assembly adapted to generate one or more electricity in the second coating region Pulp area. The first cathode assembly includes: a first rotating target assembly adapted to rotate a target material around a first rotating shaft; and a first magnetic component fixedly disposed in the first rotating target assembly, the first magnetic component The assembly has a first major plane, the first principal plane and a first reference plane forming a first angle, the first reference plane including the first axis of rotation and perpendicular to the first substrate transport direction. The second cathode assembly includes: a second rotating target assembly adapted to surround a second rotating shaft to rotate the target material; and a second magnetic assembly fixedly disposed in the second rotating target assembly, the second magnetic component There is a second principal plane, which is parallel to the first principal plane. The third cathode assembly includes: a third rotating target assembly adapted to rotate a target material around a third rotating shaft; and a third magnetic component fixedly disposed in the third rotating target assembly, the third magnetic component Having a third principal plane, the third principal plane and a second reference plane form a second angle, the second reference plane includes a third axis of rotation and perpendicular to the second substrate transport direction, wherein the second angle is different from the first angle. The fourth cathode assembly includes: a fourth rotating target assembly adapted to rotate a target material around a fourth rotating shaft; and a fourth magnetic component fixedly disposed in the fourth rotating target assembly, the fourth magnetic component There is a fourth principal plane, which is parallel to the third principal plane.

According to another embodiment, a method of coating a substrate in a first coating region and a separate second coating region is provided. The method includes providing the substrate to a first coated region. The method further includes sputtering a surface of the substrate with a first target material. The first target material is sputtered onto the surface in the first coating region at a first sputtering angle relative to the surface of the substrate. The first sputtering angle is a unique angle at which a target material is sputtered onto the surface of the substrate via a sputtering process in the first coating region. The method further includes providing the substrate to the second coated region. The method further includes sputtering the surface of the substrate with a second target material. The second target material is the same as or different from the first target material. The second target material is sputtered onto the surface in the second coating region at a second sputtering angle relative to the surface of the substrate. The second sputtering angle is different from the first sputtering angle, and the second sputtering angle is a unique angle at which a target material is sputtered onto the surface of the substrate via a sputtering process in the second coating region.

Some embodiments are more related to methods of operating the disclosed system. Such methods, or portions thereof, may be performed by manual or automated, such as by a computer programmed with a suitable software, in a combination of any two of the above, or by any other means.

The embodiments and advantages, features, aspects, and details of the embodiments described herein will be apparent from the description of the appended claims.

Various embodiments are described in detail below, and one or more embodiments are illustrated in the drawings. In the following description of the drawings, the same reference numerals are used to refer to the same elements. In general, only the differences between the individual embodiments are described. The examples are provided for explanation and are not intended to limit the scope of protection. Furthermore, features illustrated or described in one embodiment can be used in other embodiments or in combination with other embodiments to derive further embodiments. The description herein includes such adjustments and variations.

Some embodiments described herein relate to an apparatus and method for coating a substrate. In a coating process, a layer of target material is deposited on a substrate. In various instances, it is desirable to deposit a homogeneous layer of the target material on the substrate. The terms "coating process" and "deposition process" are synonymous.

The term "cathode assembly" as used herein is understood to mean a component suitable for use as a cathode in a coating process, such as in a sputter deposition process. A cathode assembly can be adapted for mounting in a coating chamber.

A cathode assembly can include a rotating target assembly that rotatably surrounds a rotating shaft of the cathode assembly. The rotating target assembly can have a curved surface, such as a cylindrical surface. A target material can comprise a material to be deposited onto a substrate during a coating process, and the target material can be mounted to the rotating target assembly.

A cathode assembly can include a magnetic component. The magnetic component can be disposed in a rotating target assembly of the cathode assembly. The position of the magnetic component within the rotating target assembly affects the direction in which the target material is sputtered from the cathode assembly in a sputter deposition process. A magnetic component produces a magnetic field. In a sputter deposition process, this magnetic field results in the formation of one or more plasma regions near the magnetic field.

According to some embodiments, a cathode assembly includes a single magnetic component, such as exactly one magnetic component, rather than more.

FIG. 1 is a schematic cross-sectional view of a sputter deposition apparatus 5 according to an embodiment. The sputter deposition apparatus as shown in Fig. 1 includes four cylindrical cathode assemblies 10, 20, 30 and 40. Such cathode assemblies are cylindrical rotating target assemblies, shown in a circle, and extending into and/or extending beyond the surface of the pattern. Also, such cathode assembly magnetic components enter and/or extend beyond the surface of the pattern. The cathode assembly 10, 20 is adapted to sputter the target material on a substrate (not shown), wherein the substrate is provided to a first coating region 100 at a first point in time. The cathode assemblies 30, 40 are also suitable for sputtering a target material on the substrate, wherein the substrate is provided to a second coating region 200 at a second point in time. In FIG. 1, the first coating region 100 and the second coating region 200 are separated from each other.

The embodiment as shown in Figure 1 further includes a substrate guiding system 110 for transporting the substrate into and out of the first coating zone. The substrate guiding system 110 can, for example, comprise a set of rollers and a magnetic guiding system, a substantially vertically oriented substrate or a bottom of one of the substrate carriers resting on the set of rollers and Moving, while the magnetic guiding system guides a top of the substrate or substrate carrier. The apparatus further includes a substrate guiding system 210 for transporting the substrate into and out of the second coating zone. The substrate guiding system 210 can be the same or similar to the substrate guiding system 110. The first substrate guiding system and the second substrate guiding system can be separate bodies. The first substrate guiding system and the second substrate guiding system do not have to be physically separated, and may be formed to have the same components or have some components connected to each other. The first substrate guiding system may be a first component of a common substrate guiding system, that is, a first component for conveying the substrate into the first coating region and being conveyed from the first coating region. The second substrate guiding system may be a second component of the common substrate guiding system, that is, a second component for transporting the substrate into the second coating zone and from the second coating zone. For example, the second substrate guiding system can follow the structure of the first substrate guiding system without gaps, in particular if the first coating area and the second coating area are directly adjacent to each other. For example, the first substrate guiding system and the second substrate guiding system can respectively include a first roller group and a second roller group, wherein the first roller group directly adjoins the second roller group, and/or A magnetic guiding system or a track shared by two substrate guiding systems may be included.

For example, in the embodiment shown in FIG. 1, the substrate may be transported from the left hand side of the first coating area to the first coating area, and from the first coating area to the first coating area. On the right hand side. In the embodiment shown in FIG. 1, after leaving the first coating area, the substrate may be further transported from the left hand side of the second coating area to the second coating area, and from the second coating area to the second coating area. The right hand side of the second coated area. As shown in FIG. 1, cathode assemblies 10 and 20 are disposed on the same side of substrate guiding system 110, and cathode assemblies 10 and 20 are disposed in such a manner as to provide a distance between substrate guiding system 110 and cathode assembly 10 and a substrate guiding system. The distance between 110 and cathode assembly 20 is the same. As shown in FIG. 1, cathode assemblies 30 and 40 are disposed on the same side of substrate guiding system 210, and cathode assemblies 30 and 40 are disposed in such a manner as to provide a distance between substrate guiding system 210 and cathode assembly 30 and a substrate guiding system. The distance between 210 and cathode assembly 40 is the same.

The first substrate guiding system 110 defines a first substrate transport direction 120. The second substrate guiding system 210 defines a first substrate transport direction 220. The term "substrate transport direction" as used herein shall include two directions that are movable along a line. For example, the first substrate transport direction 120 should include the concept of left-to-right movement of a substrate in FIG. 1, and should also include the concept of right-to-left movement, such as the double-headed arrow in FIG. ) said.

In FIG. 1, the second substrate transport direction 220 is the same as the first substrate transport direction 120. The embodiment as shown in FIG. 1 is an embodiment of an inline sputter deposition apparatus in which a substrate is transported into and out of the first coating zone 100 in a direction 120, and the substrate is conveyed in a direction 220. And transporting the second coating zone 200, the direction 220 being the same as the direction 120.

In the embodiment shown in FIG. 1, the cathode assemblies 10, 20, 30, and 40 include the rotating target assemblies 11, 21, 31, and 41, respectively, and have rotating shafts 12, 22, 32, and 42. Each of the rotating target assemblies as shown in Fig. 1 is adapted to rotate about a rotating shaft. The rotating shaft 12 and the rotating shaft 22 are parallel to each other, and the line connecting the rotating shaft 12 and the rotating shaft 22 in the plane of the drawing is parallel to the substrate guiding system 110. The rotating shaft 32 and the rotating shaft 42 are parallel to each other, and a line connecting the rotating shafts in the plane of the drawing is parallel to the substrate guiding system 210. In particular, in the embodiment shown in Fig. 1, the rotary shafts 12, 22, 32 and 42 are parallel to each other. Each of the cathode assemblies 10, 20, 30, and 40 further includes a magnetic component. The respective magnetic components 13, 23, 33 and 43 as shown in Fig. 1 are fixedly disposed in their rotating target assemblies.

The magnetic components 13 and 23 as shown in Fig. 1 are configured such that the target material is sputtered by the cathode assemblies 10 and 20, respectively, and sputtered toward the substrate guiding system 110. Still further, the magnetic components 33 and 43 are configured such that the target material is sputtered by the cathode assemblies 30 and 40, respectively, and sputtered toward the substrate guiding system 210.

As in the embodiment illustrated in Figure 1, each of the rotating target assemblies includes exactly one magnetic component, for example including a single magnetic component. The position of the magnetic assembly 13 in the cathode assembly 10 is determined by a first angle 1 wherein the first angle 1 is the angle between the plane 14 and a reference plane 130 and the plane 14 extends through the magnetic assembly 13. center. The reference plane 130 is perpendicular to the substrate guiding system 110 and the substrate transport direction 120, respectively. In the cross-sectional schematic view shown in Fig. 1, the planes 130 and 14 are each indicated by a line. In the embodiment shown in Figure 1, the first angle is a non-zero angle, such as an angle of about 35 degrees. FIG. 1 further illustrates a plane 24 that extends through the center of the magnetic assembly 23. In the embodiment shown in FIG. 1, the magnetic assembly 13 is fixedly disposed in the rotating target assembly 11, and the magnetic assembly 23 is fixedly disposed in the rotating target assembly 21 such that the plane 14 is parallel to Plane 24.

The position of the third magnetic component 33 as shown in Fig. 1 is determined by a second angle 2, wherein the second angle 2 is the angle between the plane 34 and a reference plane 230, and the plane 34 extends through the magnetic The center of component 33. The reference planes 230 are perpendicular to the substrate guiding system 210 and the substrate transporting direction 220, respectively. In the embodiment shown in Fig. 1, the reference plane 130 and the reference plane 230 are parallel to each other. In Fig. 1, the second angle 2 is a non-zero angle and different from the first angle 1, and the second angle 2 is, for example, an angle of -35 degrees. FIG. 1 further illustrates a plane 44 that extends through the center of the magnetic assembly 43. In the embodiment shown in Fig. 1, the magnetic component 33 is fixedly disposed in the rotating target assembly 31, and the magnetic assembly 43 is fixedly disposed in the rotating target assembly 41 such that the plane 34 is parallel to the plane. 44.

In Fig. 1, the configuration of a pair of cathode assemblies 30 and 40 and the configuration of a pair of cathode assemblies 10 and 20 are mirror images of each other. Thus, the first angle is a positive angle and the second angle is a negative angle, wherein the magnitude of the first angle is the same as the magnitude of the second angle.

The sputter deposition apparatus 5 as shown in Fig. 1 can be used, for example, to form a relatively thick layer of a particular material on a substrate. This relatively thick layer can be deposited in the form of two sub-layers using the same target material and in two different coated areas. This approach is particularly advantageous for processes that use inline apparatus, other deposition processes, or some other process that is applied to the substrate through the in-line device and that requires time-consuming processes.

The fixed configuration of the magnetic assembly has the advantage over the rotary magnetic assembly that no magnetic drive is required. This significantly reduces the complexity, the amount of work and cost required for maintenance. Another advantage may be that there is no loss of time due to the movement of the magnetic components.

Still further, one advantage of having one cathode assembly with only one magnetic component is the increased operational stability of the plasma in conjunction with the sputter deposition process. The use of more than two magnetic components per cathode assembly can cause instability in process conditions.

Different fixed angles of the magnetic components in the first coating zone and the second coating zone, such that the sputtering comprises depositing one of the first sub-layers in the first coating zone and sputtering in the second coating zone The uniformity of a layer of a second set of sub-layers is increased, especially if these different angles are mirror images of one another. The cathode assembly has a magnetic assembly rotatable around a rotating shaft, and may also be provided for depositing a homogeneous layer of a material on the substrate, wherein the rotation around the rotating shaft may be in a wobbling mode or a separate sputtering. The split sputter mode is provided. However, rotary magnetic components are more complex because of the need for drivers, controllers, or the like, and yields may be lower, particularly in the case of in-line sputter deposition apparatus.

According to some embodiments described herein, a sputter deposition apparatus for coating a substrate is provided. The sputter deposition apparatus has two or more coated regions for coating a substrate. According to some embodiments, the sputter deposition apparatus is adapted to coat a substrate in two or more coated regions in a static deposition process.

The differences between static deposition processes and dynamic deposition are as follows, and in particular for large area substrate processing, such as processing large area substrates that are vertically oriented. Dynamic sputtering is an inline process in which a substrate moves continuously or semi-continuously adjacent to a deposition source. An advantage of dynamic sputtering is that the sputtering process can be stabilized before the substrate moves into the deposition area, and can then remain unchanged as the substrate passes through the deposition source. However, dynamic deposition may have some disadvantages, such as the production of particles. This may be particularly useful for the deposition of thin film transistor backplanes. It should be noted that the term static deposition process, which is different from the dynamic deposition process, does not preclude all movement of the substrate as understood by those of ordinary skill in the art. A static deposition process can include, for example, a static substrate position during deposition, an oscillating substrate position during deposition, and an average substrate position during deposition (this position is substantially during deposition) Maintained unchanged), a dithering substrate position during deposition, a wobbling substrate position during deposition, or a combination thereof. Thus, a static deposition process can be understood as a deposition process in which the substrate has a static position, a deposition process in which the substrate has a substantially static position, or a deposition process in which the substrate has a partially static position. Thereby, the static deposition process described herein can be clearly distinguished from the dynamic deposition process. The static deposition process does not mean that the substrate position during deposition must be accompanied by a complete immovability of the substrate or cathode assembly.

According to some embodiments, the two or more coated regions are separate coated regions. In other words, the coated regions do not overlap each other. The coated areas can be separated from one another by a specific distance. The regions may be separated from one another by a dividing wall, wherein the dividing wall may be an inner wall of a coating chamber or an outer wall of more than one coating chamber, for example two adjacent coatings The outer wall of the chamber. A coating chamber can include one or more coated regions spaced apart from one another.

According to some embodiments, which can be combined with other embodiments described herein, the sputter deposition apparatus is an in-line apparatus. An in-line device can include two or more coated regions disposed along a substrate transport path. The substrate transport path may be straight, and the plurality of coated regions may be disposed substantially along a straight line, although the substrate transport path may have a curve. One or more than one substrate transport path may pass through a coated area, such as a forward or a retreat path. FIG. 1 illustrates an example of an in-line sputter deposition apparatus in which a first coating region 100 and a second coating region 200 are disposed along a line.

An operational mode of an in-line sputter deposition apparatus can include directing and/or transporting a substrate through a plurality of coating regions of a sputter deposition apparatus along at least one substrate transport path, wherein the plurality of coatings of the substrate in the sputter deposition apparatus The cloth area is processed in order. In an in-line sputter deposition process, movement of the substrate along a plurality of line of coating regions may include: two-way moving along a plurality of coated regions. For example, forward and backward and/or movement with interruptions, so that sometimes the substrate may be moved, while other substrates may remain stationary, especially when the substrate is coated. In some embodiments, which may be combined with other embodiments described herein, the static deposition process is performed along a line of multiple coated regions in some or all of the coated regions.

The sputter deposition apparatus includes a first substrate guiding system, such as the substrate guiding system 110 as shown in FIG. 1 , for guiding the substrate to a first coating area, and the first substrate guiding system defines a first A substrate transport direction. The first substrate transport direction may be, for example, a direction 120 as shown in FIG. The sputter deposition apparatus further includes a second substrate guiding system, such as a second substrate guiding system 210 as shown in FIG. 1 for guiding the substrate to a second coating area, the second substrate guiding system A second substrate transport direction is defined. The second substrate transport direction may be, for example, a direction 220 as shown in FIG. According to some embodiments, which may be combined with other embodiments described herein, the second substrate transport direction and the first substrate transport direction are the same or different. In some embodiments, particularly in an in-line sputter deposition apparatus, the second substrate transport direction and the first substrate transport direction are along the substrate transport path, and the two directions may be the same.

According to some embodiments described herein, the sputter deposition apparatus includes a first cathode assembly adapted to produce one or more plasma regions in the first coating region. The first cathode assembly includes a first rotating target assembly adapted to surround a first rotating shaft to rotate a target material; and a first magnetic assembly fixedly disposed in the first rotating target assembly. The first magnetic component has a first principal plane, the first principal plane and a first reference plane form a first angle, and the first reference plane includes a first axis of rotation and is perpendicular to the first substrate transport direction. The first principal plane may for example be a plane 14 as shown in Fig. 1 and the first reference plane is for example a plane 130 as shown in Fig. 1.

According to some embodiments described herein, the sputter deposition apparatus includes a second cathode assembly adapted to produce one or more plasma regions in the first coating region. The second cathode assembly includes a second rotating target assembly adapted to rotate a target material about a second axis of rotation. The second axis of rotation may be parallel to the first axis of rotation. The second magnetic component is fixedly disposed in the second rotating target assembly. The second magnetic component has a second major plane that is substantially parallel or parallel to the first major plane. The second principal plane is, for example, a plane 24 as shown in Fig. 1. If the angle between the two planes is not more than 5 degrees, it is considered to be substantially parallel.

The sputter deposition apparatus includes a third cathode assembly adapted to produce one or more plasma regions in the second coating region. The third cathode assembly includes a third rotating target assembly adapted to rotate a target material about a third axis of rotation. The third magnetic component is fixedly disposed in the third rotating target assembly. The third magnetic component has a third principal plane, the third principal plane and a second reference plane form a second angle, and the second reference plane includes a third axis of rotation and is perpendicular to the second substrate transport direction. The third principal plane may for example be a plane 34 as shown in Fig. 1 and the second reference plane is for example a reference plane 230 as shown in Fig. 1. The second angle is different from the first angle. The sputter deposition apparatus includes a fourth cathode assembly adapted to produce one or more plasma regions in the second coating region. The fourth cathode assembly includes a fourth rotating target assembly adapted to rotate a target material about a fourth axis of rotation. The fourth axis of rotation may be parallel to the third axis of rotation. The fourth magnetic component is fixedly disposed in the fourth rotating target assembly. The fourth magnetic component has a fourth major plane, which may for example be a plane 44 as shown in FIG. The fourth major plane is substantially parallel or parallel to the third major plane.

According to some embodiments, the first magnetic component is a unique magnetic component disposed in the first rotating target component, the second magnetic component is a unique magnetic component disposed in the second rotating target component, and the third magnetic component is disposed on The only one of the third rotating target assemblies, and the fourth magnetic component is the only one of the fourth rotating target assemblies.

The first, second, third, and fourth magnetic components or other magnetic components located in the first or second coating region are fixedly disposed in the respective rotating target assemblies, and the description is understood as the following concept. The location of the magnetic component within its rotating target assembly remains fixed during at least the deposition process of the substrate and may remain fixed during a deposition cycle of several substrates under the same process conditions. There may be no motor that rotates the magnetic assembly relative to its rotating target assembly. The magnetic assembly can be securely attached to the cathode assembly. The firmly attached magnetic component can be removed to adjust the position and/or orientation of the major plane of the magnetic component. For example, the position of the magnetic component can be adjusted across different deposition cycles, which can occur at different points in time, and can have different process parameters, such as different target materials. The above concept is understood to mean a situation in which the position of the adjustable position is, for example, a continuous oscillating movement of the magnet when sputtering a substrate, relative to the case where the magnetic component has an adjustable position in a single or the same deposition process. In some embodiments, the position of the magnetic component within its rotating target assembly can be adjusted based on the target material mounted on the rotating target assembly. For example, in a first deposition period occurring in the first coating region, a first target material may be used, and thus, the position of the first magnetic component may be a first position, wherein the first position is Maintaining a fixed period in a deposition cycle; and in a second deposition period occurring in the first coating region, a second target material may be used, and thus, the position of the first magnetic component may be a second position, wherein The two positions remain fixed during the second deposition cycle.

According to some embodiments, which can be combined with other embodiments described herein, the first, second, third and fourth rotating target assemblies are adapted to rotate in a direction of rotation, wherein for the first, second, third And each of the fourth rotating target assemblies, the direction of rotation can be independently selected from clockwise and counterclockwise.

According to some embodiments, which may be combined with other embodiments described herein, the first and second rotating target assemblies may be rotated in the same direction of rotation, for example, the first and second rotating target assemblies may all rotate in a clockwise direction . According to some other embodiments, which may be combined with other embodiments described herein, the first and second rotating target assemblies may be rotated in accordance with two opposing directions of rotation of a sputter deposition process, for example, the first rotating target assembly may Rotating in a clockwise direction, and the second rotating target assembly can be rotated in a counterclockwise direction. Similarly, the third and fourth rotating target assemblies can be rotated in the same direction of rotation, for example, the third and fourth rotating target assemblies can all rotate in a clockwise direction. According to some other embodiments, which may be combined with other embodiments described herein, the third and fourth rotating target assemblies may be rotated in accordance with two opposing rotational directions of a sputter deposition process, for example, the third rotating target assembly may Rotating in a clockwise direction, and the fourth rotating target assembly can be rotated in a counterclockwise direction.

According to some embodiments, which may be combined with other embodiments described herein, the direction of rotation of a cathode assembly, such as the direction of rotation of the first, second, third and/or fourth rotating target assemblies, may be on a substrate Reverse in a sputtering process. A cathode assembly can have a first direction of rotation in the first half of the sputtering process of a substrate and a second direction of rotation that is different from the first direction of rotation in the second half of the same sputtering process of a substrate. For example, the first rotating target assembly can be rotated first in a clockwise direction and then in a counterclockwise direction.

FIG. 2 illustrates a sputter deposition apparatus of an embodiment. As shown in the enlarged view of the magnetic assembly 23, the magnetic assembly 23 has an inner south pole 231 and two outer north poles 232. The inner and outer poles extend beyond the body 233 of the magnetic assembly 23. The body 233 is perpendicular to the longitudinal extension of the poles 231, 232 and connects the poles at a base end. The cross-sectional view of the magnetic component 23 as shown in Fig. 2 has a fork shape in which the branches of the fork represent the inner and outer poles. Still further, the inner and outer poles face an inner surface of the rotating target assembly 21. The inner pole 231 further has a central plane 234 that coincides with the plane 24. As shown in Fig. 2, the center plane 234 is indicated by a line in the cross-sectional view, and the center plane 234 passes through the center of the inner pole 231 in a direction parallel to the direction in which the inner pole extends. The two outer poles 232 as shown in Fig. 2 extend in a direction parallel to the plane 24 and at a distance from the central plane 234.

In the embodiment as shown in FIG. 2, cathode assemblies 10 and 20, substrate guiding system 110 and first coating zone 100 are located in a first coating chamber 140, and cathode assemblies 30 and 40, second The substrate guiding system 210 and the second coating zone 200 are located in a second coating chamber 240. The coating chambers 140 and 240 are adjacent to each other in the coating chamber and are separated by a partition wall 6. As shown in the figure, the coating chambers 140 and 240 are connected to each other by a valve 7, and the valve 7 is disposed in the partition wall 6, which allows the substrate to be transferred from the coating chamber 140 to the coating chamber 240, and vice versa. Of course. Valve 7 can be a vacuum closed valve. The vacuum containment valve may be selected from the group consisting of a slit valve, a sluice valve, and a gate valve.

Having two coated regions in the separate coating chambers has the advantage that cross-contamination does not occur between substrates disposed in different coating chambers. Another advantage is that the process parameters, such as the composition of the pressure or process gases, can be adjusted for the individual coating chambers. In particular, in an in-line coating system, it is possible to perform sputtering of a thick layer in two or more coating chambers, each of which sputters a portion of the thick layer, so that the substrates are spent The time for different coating chambers can be more equal, and the waiting time for the substrate can be reduced, thereby increasing throughput.

According to some embodiments described herein, a magnetic component, such as first, second, third, and fourth magnetic components, has a major plane, such as first, second, third, and fourth principal planes, respectively . A magnetic component as described herein can include an inner magnetic pole and at least one outer magnetic pole, a central plane of the inner magnetic pole coinciding with a major plane of the magnetic component, the at least one outer magnetic pole being spaced apart from the major plane of the magnetic component by a distance. For example, in FIG. 2, the magnetic component 23 can be regarded as a second magnetic component, the pole 231 serves as an inner magnetic pole, the pole 232 serves as an outer magnetic pole, the plane 234 serves as a center plane of the second magnetic component, and the plane 24 serves as a second main body. In plan, the second principal plane coincides with the central plane of the second magnetic component.

The major plane of a magnetic component can be perpendicular to a body of the magnetic component. The body can be connected to the poles and can be perpendicular to the direction of the longest extension of the poles, such as the long axis extension of the poles. The principal plane can be one of the mirror symmetry planes of the magnetic component. In some embodiments, the inner and outer poles of a magnetic assembly extend outwardly from the body of the magnetic assembly, with the major plane of the magnetic assembly passing through the center of the inner magnetic pole along the length.

The inner and outer poles of a magnetic component can be located on the same side of the body of the magnetic component. The magnetic component can be disposed within its rotating target assembly such that one or more poles face an inner surface of the rotating target assembly. According to some embodiments, a magnetic component has two outer poles of the same polarity and one inner pole of opposite polarity.

In some embodiments, which may be combined with other embodiments described herein, the first angle is a positive angle relative to the first reference plane and the second angle is a negative angle relative to the second reference plane. The first and second reference planes may be parallel. The first angle can be a non-zero angle. The first angle may have a numerical range of 0 to 60 degrees, particularly a range of 5 to 50 degrees, more particularly a range of 10 to 40 degrees, for example, about 15 degrees, 25 degrees, or 35 degrees. The second angle can be a non-zero angle. The second angle may have a numerical range of 0 to -60 degrees, particularly a range of -5 to -50 degrees, more particularly a range of -10 to -40 degrees, for example, about -15 degrees, -25 degrees, or -35. degree. The absolute value of the difference between the first angle and the second angle may be greater than 5 degrees, 10 degrees, 20 degrees, or 30 degrees. More particularly, the absolute value of the difference between the first angle and the second angle may be greater than 40 degrees, 50 degrees, or even 60 degrees. If the first and second substrate guiding systems are parallel to each other, the absolute value of the difference between the first angle and the second angle corresponds to an angle between the first major plane and the third major plane. The first angle and the second angle may have the same numerical magnitude, for example, when the absolute value is taken, the value of the first angle and the value of the second angle may be the same. The numerical values may be substantially the same, for example, differing by no more than ±5 degrees.

According to some embodiments, which can be combined with other embodiments described herein, a sputter deposition apparatus includes a first coating chamber and a second coating chamber. The first coating zone is located in the first coating chamber and the second coating zone is located in the second coating chamber. The first and second cathode assemblies are disposed in the first coating chamber, and the third and fourth cathode assemblies are disposed in the second coating chamber. Any coating chamber can be a vacuum chamber. A vacuum chamber includes one or more valves that connect one chamber to another. After a substrate is introduced into the vacuum chamber, the one or more valves can be closed. Accordingly, the gas pressure in the vacuum chamber can be controlled by creating a technical vacuum, such as via a vacuum pump and/or introducing a process gas into the chamber to create a technical vacuum.

Figures 3a-3b illustrate an embodiment of a method of coating a substrate at two different time points and in two coated regions. FIG. 3a illustrates a substrate 50 being coated in the coating region 100 of the first coating chamber 140 at a first time point. The substrate 50 is guided by the substrate guiding system 110. The target material is sputtered onto the substrate 50 at a first sputtering angle 1100. The substrate is a planar substrate and the substrate is parallel to the substrate guiding system 110. The plasma regions 15 and 25 are produced via the cathode assemblies 10 and 20, respectively. The plasma region 15 is formed in the vicinity of a magnetic field (not shown) generated by the magnetic component 13. The plasma region 25 is formed in the vicinity of a magnetic field (not shown) generated by the magnetic component 23. A target material is sputtered from the cathode assemblies 10 and 20 toward the substrate, and the direction in which the target material is sputtered by the cathode assembly 10 is the same as the direction in which the target material is sputtered by the cathode assembly 20, as in 3a. The arrow of the figure is shown.

In the embodiment shown in Fig. 3a, the angle between the substrate and the plane 14 extending through the center of the magnetic assembly 13 is the same as the angle between the substrate and the plane 24 extending through the center of the magnetic assembly 23. Thus, the first sputtering angle 1100, that is, the angle at which the target material is sputtered from the cathode assembly 10 onto the substrate, is the same as the angle at which the target material is sputtered from the cathode assembly 20 onto the substrate. Further, in FIG. 3a, the first sputtering angle is a negative angle, and the relationship between the first sputtering angle and the first angle 1 is as follows: the first sputtering angle plus 90 degrees is equal to the first angle . In other words, the first angle 1 and the first sputtering angle 1100 are complementary angles.

Still further, as in the embodiment illustrated in Figure 3a, the second coating chamber 240 is depicted as not including any substrate for ease of illustration. In an inline processing system, the second coating chamber will typically contain a different substrate that has been processed in the first coating chamber at an earlier point in time.

Figure 3b illustrates a second coating chamber in which a second sputtering process occurs at a second point in time. The substrate 50 is guided by the substrate guiding system 210 and parallel to the substrate guiding system 210. Between the case in Fig. 3a and the case in Fig. 3b, the substrate may have been guided out of the first chamber by the substrate guiding system 110 and guided by the substrate guiding system 210 into the second coating. Chamber. Although the first coating chamber 140 is depicted as not including any substrate in the first coating chamber 140 for ease of illustration, the first coating chamber 140 will typically include another substrate to be coated at the same time.

In Figure 3b, the substrate is located in the second coating zone 200. In the second sputtering process as shown in Fig. 3b, the same target material is sputtered onto the substrate 50 at a second sputtering angle which is different from the first sputtering angle. Plasma regions 35 and 45 are produced via cathode assemblies 30 and 40, respectively. The plasma region 35 is formed adjacent to a magnetic field (not shown) generated by the magnetic component 33. The plasma region 45 forms a magnetic field (not shown) generated by the magnetic component 43. The target material is sputtered from cathode assemblies 30 and 40 and faces the substrate. As shown, the direction in which the target material is sputtered by the cathode assembly 30 is the same as the direction in which the target material is sputtered by the cathode assembly 40, as indicated by the arrows in Figure 3b.

In the embodiment illustrated in Figure 3b, the angle between the substrate and the plane 34 extending through the center of the magnetic assembly 33 is the same as the angle between the substrate and the plane 44 extending through the center of the magnetic assembly 43. Thus, the second sputtering angle 2100, that is, the angle at which the target material is sputtered from the cathode assembly 30 onto the substrate, is the same as the angle at which the target material is sputtered from the cathode assembly 40 onto the substrate. Further, in FIG. 3b, the second sputtering angle 2100 is a negative angle, and the relationship between the second sputtering angle 2100 and the second angle 2 is as follows: the second sputtering angle plus 90 degrees is equal to Two angles. In other words, the second angle 2 and the second sputtering angle 2100 are mutually complementary angles.

The first sputtering angle 1100 as shown in Fig. 3a is different from the second sputtering angle 2100 as shown in Fig. 3b. As shown in Fig. 3a, the magnitude of the first sputtering angle is less than 90 degrees, and as shown in Fig. 3b, the magnitude of the second sputtering angle is greater than 90 degrees. The magnetic components 33 and 43 in the second coating chamber 240 are arranged in a mirror symmetrical manner with respect to the magnetic components 13 and 23 in the first coating chamber 140, and the plane of symmetry is along the 3a-3b diagram. A plane extending from top to bottom. The sum of the magnitude of the first sputtering angle 1100 and the magnitude of the second sputtering angle 2100 is 180 degrees. In other words, such sputter angles behave as if they are mutually complementary.

Due to throughput and uptime, two coating chambers as described herein can be used to deposit a thick layer of material. Thus, some embodiments including two coating chambers having different process parameters provide a uniform coating with cost efficiency and time efficiency, such as, for example, sections 2, 3a-3b, and 4a-4b. An embodiment wherein the first angle is different from the second angle.

The disclosure is particularly directed to the coating of large area substrates. A coating chamber, particularly for coating a large area substrate, can include a plurality of cathode assemblies, each having a rotating target assembly and a magnetic assembly. This state is shown in Figures 4a-4b.

4a-4b illustrate a first coating chamber 140 and a second coating chamber 240, wherein the exemplary first coating chamber includes six cathode assemblies 10, 20, 311, 321, 331, and 341, The second coating chamber includes six cathode assemblies 30, 40, 312, 322, 332, and 342. 4a-4b further illustrate that the magnetic components 411, 421, 431, 441, 412, 422, 432, and 442 are disposed in the cathode assemblies 311, 321, 331, 341, 312, 322, 332, and 342, respectively. Each cathode assembly as shown in Figure 4a has a single magnetic component, such as exactly one magnetic component. Each cathode assembly as shown in Figure 4b has a single magnetic component, such as exactly one magnetic component. Each of the cathode assemblies 311, 321, 331, 341, 312, 322, 332, and 342 further has planes 511, 521, 531, 541, 512, 522, 532, and 542, respectively, each of which extends through the magnetic components 411, 421, Centers of 431, 441, 412, 422, 432, and 442. As shown, the planes 511, 521, 531, and 541 are parallel to the plane 14, and the planes 512, 522, 532, and 542 are parallel to the plane 34.

In Figure 4a, the target material is sputtered from the cathode assemblies 10, 20, 311, 321, 331, and 341 and directed toward the substrate. As shown in the figure, the direction in which the target material is sputtered by the cathode assembly 10 and the direction in which the target material is sputtered by the cathode assemblies 20, 311, 321, 331 and 341, respectively. The first sputtering angle 1100 is the same as the angle at which the target material is sputtered onto the substrate from the cathode assemblies 311, 321, 331, and 341, respectively, and from the respective cathodes in the first coating chamber 140 in FIG. 4a. The target material sputtered by the component is the same. In Figure 4b, the target material is sputtered from the cathode assemblies 30, 40, 312, 322, 332, and 342 and toward the substrate. As shown, the direction in which the target material is sputtered by the cathode assembly 30 is the same as the direction in which the target material is sputtered by the cathode assemblies 40, 312, 322, 332, and 342, respectively. The second sputtering angle 2100 is the same as the angle at which the target material is sputtered onto the substrate from the cathode assemblies 312, 322, 332, and 342, respectively, and from the respective cathodes in the second coating chamber 240 in FIG. 4b. The target material sputtered by the component is the same. The advantage of having more than two cathode assemblies in one coating zone or chamber is that a relatively uniform and homogeneous coating can be formed, particularly for large area substrates.

4a and 4b exemplarily illustrate power supplies 611, 621, 631, 641, 651, 661, 612, 622, 632, 642, 652 and 662 of an embodiment, such power supplies being used in some embodiments A bias voltage is applied to the cathode assemblies 10, 20, 311, 321, 331, 341, 30, 40, 312, 322, 332, and 342, respectively. 4a and 4b more illustratively illustrate anode strips 711, 721, 731, 741 and 751 disposed between cathode assemblies 10, 20, 311, 321, 331 and 341. 4a and 4b more illustratively illustrate anode strips 712, 722, 732, 742, and 752 disposed between cathode assemblies 30, 40, 312, 322, 332, and 342.

The cathode assemblies 10, 20, 311, 321, 331 and 341 as shown in Figures 4a and 4b are not arranged equidistantly with respect to the substrate, but are arranged along an arc shape. The curvature of the curved cathode configuration is such that the cathode assemblies 10 and 341 on the outer side of the arc are relatively farther from the substrate than the cathode assemblies 311 and 321 on the inner side of the arc. Similarly, cathode assemblies 30, 40, 312, 322, 332 and 342 as shown in Figures 4a and 4b are arranged along an arc. Under some process conditions, such a curved cathode configuration can achieve higher coating uniformity, particularly at the edge of the substrate, as compared to the arrangement of the cathode in an equidistant manner relative to the substrate.

According to some embodiments, which may be combined with other embodiments described herein, the first coated region, the second coated region, or any other coated region may incorporate a plurality of cathode assemblies. In particular, the first coating chamber, the second coating chamber or any other coating chamber may each comprise a plurality of cathode assemblies. The cathode assembly can be configured as an array in combination with a coating region or included in a coating chamber. In particular, for static large-area substrate deposition, a one-dimensional array of cathode assemblies can be provided, with one-dimensional systems being understood as being similar to the cross-sections shown in Figures 1 through 4b. The cathode components in the array may be arranged regularly, in particular in such a manner as to have substantially equal spacing between each other. The number of cathode assemblies may range from 2 to 18, more specifically from 4 to 16 per coating chamber or coating zone, for example, each coating chamber or each coating zone 5, 6, 7, 8 9, 10, 11, 12 or more than 12 cathode assemblies.

The length of a rotating target assembly of the sputter deposition apparatus, such as the length of the first, second, third, fourth, or other rotating target assembly, may be slightly larger than the length of the substrate to be coated. Still further or alternatively, a cathode array combined with a coating zone or contained in a coating chamber may be slightly wider than the width of the substrate. "Slightly" includes ranges between 100% and 110%. A slightly larger coating length/width approach helps to avoid the boundary effect.

In some embodiments, which may be combined with other embodiments described herein, a plurality of cathode assemblies incorporating a coating region or contained in a coating chamber are not disposed equidistantly relative to the substrate, but rather along a Curved configuration. This arc is such that the position of the inner cathode assembly is closer to the substrate than the outer cathode assembly. This situation is illustrated in Figures 4a and 4b. Alternatively, the arc may define the position of the plurality of cathode assemblies such that the outer cathode assembly is positioned closer to the substrate than the inner cathode assembly. In addition, the scattering is expressed according to the material to be sputtered. Therefore, depending on the application, such as the material to be sputtered, providing the cathode assembly in an arcuate manner can further improve the homogeneity. The positioning of the arc is determined by the application.

5a-5b illustrate a method of coating a substrate in a first coating region 100 and a second coating region 200 at different time points. Figure 5a shows the substrate in the first coating zone 100 at a first point in time. A first target material is sputtered onto a surface 51 of the substrate in the first coating region at a first sputtering angle 1100 relative to the surface of the substrate, the first sputtering angle 1100 being indicated by an arrow. The first coating zone 100 can be located in a first coating chamber.

Figure 5b shows the substrate in a second coating zone at a second point in time. A second target material is sputtered onto the surface in the second coating region at a second sputtering angle 2100 relative to the surface of the substrate, as in the examples shown in Figures 5a and 5b, the second target The material is the same as the first target material, for example to deposit a thick layer in two deposition processes. The first sputtering angle 1100 as shown in Fig. 5a is different from the second sputtering angle 2100 as shown in Fig. 5b. The second coating zone 200 can be located in a second coating chamber.

According to some embodiments, a method of coating a substrate is provided. The following reference symbols refer to the flowchart of Fig. 6. The method can include depositing a layer of material on a surface of a substrate of two or more deposition processes. The sub-layers of material may be deposited on the substrate in this two or more processes in sequence such that the final layer of material deposited on the substrate is the sum of all sub-layers.

The method includes providing a substrate to a first coating region, such as reference numeral 1000 shown in FIG. The method further includes sputtering a surface of the substrate with a first target material, the first target material being sputtered on the surface in the first coating region at a first sputtering angle with respect to the surface of the substrate, Reference number 2000 as shown in Fig. 6. The first sputtering angle is a unique angle at which a target material is sputtered onto the surface of the substrate via a sputtering process in the first coating region. The method further includes providing the substrate to the second coated region, as indicated by reference numeral 3000 in FIG. The method further includes sputtering the surface of the substrate with a second target material, the second target material being the same or different than the first target material, as referenced 4000 as shown in FIG. The second target material is sputtered onto the surface in the second coating region at a second sputtering angle relative to the surface of the substrate. The first sputtering angle is different from the second sputtering angle. The second sputtering angle is a unique angle at which a target material is sputtered onto the surface of the substrate via a sputtering process in the second coating region.

According to some embodiments, this coating method is related to an in-line sputter deposition process. In an in-line sputter deposition process, the first and second coating regions may be disposed along a substrate transport path, such as a line, and the coating method may include guiding and/or transporting the substrate along the substrate transport path into the first The coating area, the first coating area is sent out, the second coating area is entered, and the second coating area is sent out. The substrate is transported along the substrate transport path, and the first and second coated regions are disposed on the substrate transport path. The transport may be transport with interruptions, so that the substrate is transported at some point in time, and the substrate is at other times. The point, especially during sputtering, is static or vibration or the like. Movement can be a move of both directions along this path. There may be more than one substrate transport path, such as a forward path or a return path through the coated area. The substrate may be vertically aligned or substantially vertically aligned throughout the coating process. When the inclination angle of the substrate with respect to the vertical direction is less than ± 25 degrees, or even less than ± 15 degrees, or even less than ± 10 degrees, it is substantially perpendicularly aligned. In some embodiments, the sputtering process in the first and second coating regions is a static sputter deposition process.

According to some embodiments, which may be combined with other embodiments described herein, the first sputter angle has a numerical magnitude ranging from 30 to 90 degrees and the second sputter angle has a numerical magnitude ranging from 90 to 150 degrees. The first sputtering angle may be different from 90 degrees, and the second sputtering angle may be different from 90 degrees. The magnitude of the first sputtering angle may range from 30 to 90 degrees, particularly from 40 to 85 degrees, and more particularly from 50 to 80 degrees, such as about 55 degrees, 65 degrees, or 75 degrees. The magnitude of the second sputtering angle may range from 90 to 150 degrees, particularly from 95 to 140 degrees, more particularly from 100 to 130 degrees, such as about 105 degrees, 115 degrees, or 125 degrees. According to some embodiments, the sum of the magnitude of the first sputter angle and the magnitude of the second sputter angle is 180 degrees.

According to some embodiments, the coating method can be performed via a sputter deposition apparatus of some embodiments described herein. In some embodiments, the first sputtering angle is equal to the angle between the first substrate transport direction and the first major plane, while the first sputtering angle is equal to the angle between the first substrate transport direction and the second major plane. In some embodiments, the second sputtering angle is equal to the angle between the second substrate transport direction and the third major plane, while the second sputtering angle is equal to the angle between the second substrate transport direction and the fourth major plane.

According to some embodiments, which may be combined with other embodiments described herein, the first angle determines a first sputtering angle. The relationship between the two angles can be as follows: the first sputter angle plus 90 degrees is equal to the first angle. According to some embodiments, the second angle determines a second sputtering angle. The relationship between the two angles can be as follows: the second sputtering angle plus 90 degrees is equal to the second angle.

According to some embodiments of the coating method that can be combined with other embodiments described herein, the first coating zone is contained in the first coating chamber and the second coating zone is contained in the second coating chamber.

The term "substrate" as used herein may include a non-flexible substrate and a flexible substrate, such as a slice of a transparent crystal of a glass substrate, a wafer, such as sapphire or the like, or The glass sheet, the flexible substrate is, for example, a web or a foil. In accordance with some embodiments that may be combined with other embodiments described herein, the embodiments described herein may be applied to physical vapor deposition of displays, such as sputter deposition on large area substrates for the display market. According to some embodiments, the large area substrate or corresponding carrier may have a size of at least 0.67 square meters, wherein the carrier may carry one or more substrates. This size may be from about 0.67 square meters (0.73 meters x 0.92 meters; 4.5th generation) to about 8 square meters, more particularly from about 2 square meters to about 9 square meters or even 12 square meters. ruler. Substrates or carriers that may be suitable for use in the structures of the embodiments described herein, such as devices and methods of cathode assemblies, may be large area substrates as described herein. For example, a large-area substrate or carrier may be a substrate corresponding to approximately 0.67 square meters (0.73 meters x 0.92 meters) of the 4.5th generation, corresponding to approximately 1.4 square meters (1.1 meters) of the 5th generation. The substrate of x1.3 meters) corresponds to a substrate of approximately 4.29 square meters (1.95 meters x 2.2 meters) of the 7.5th generation, corresponding to approximately 5.7 square meters (2.2 meters x 2.5 meters) of the 8.5th generation. The substrate of the ruler, or even the substrate of approximately 8.7 square meters (2.85 meters x 3.05 meters) of the 10th generation. Even higher generations such as the 11th and 12th generations and their corresponding substrate areas can be applied in a similar manner.

According to some embodiments, which may be combined with other embodiments described herein, the target material may be selected from the group consisting of: aluminum, lanthanum, cerium, molybdenum, niobium, titanium, copper, and oxides of the above metals. , nitrides, nitrogen oxides and alloys of the above metals. In particular, the target material may be selected from the group consisting of or consisting of aluminum, copper and cerium. A reactive sputtering process can provide a deposited oxide of such target materials. The sputter material also includes indium tin oxide (ITO), indium zinc oxide (IZO), indium gallium zinc oxide (IGZO), and aluminum-doped zinc oxide (AZO). These materials can be sputtered in a partially reactive manner. Nitrides or oxynitrides can also be deposited. Process gases for sputtering target materials that can be used in conjunction with the embodiments described herein can include inert gases such as argon and/or reactive gases such as oxygen, nitrogen, hydrogen, ammonia. Gas (NH ₃ ), ozone, activated gas or the like.

When referring to the "homogeneity" of a deposited material layer, it should be mainly understood to mean the film thickness, crystal structure, specific resistance and stress uniformity of the coating area of the entire substrate (uniformity). ).

The above has been disclosed in some embodiments, and the modifications of the foregoing embodiments are further provided to provide further further embodiments without departing from the scope of the invention as defined by the appended claims.

1‧‧‧ first angle
2‧‧‧second angle
5‧‧‧Sputter deposition device
6‧‧‧ partition wall
7‧‧‧ valve
10, 20, 30, 40, 311, 312, 321, 322, 331, 332, 341, 342‧‧‧ cathode components
11, 21, 31, 41‧‧‧ Rotating target components
12, 22, 32, 42‧‧‧ rotating shaft
13, 23, 33, 43, 411, 412, 421, 422, 431, 432, 441, 442 ‧ ‧ magnetic components
14, 24, 34, 44, 130, 230, 511, 512, 521, 522, 531, 532, 541, 542‧ ‧ plane
15, 25, 35, 45‧‧‧ Plasma area
50‧‧‧Substrate
51‧‧‧ surface
100, 200‧‧‧ coated area
110, 210‧‧‧Substrate guidance system
120, 220‧‧‧ directions
140, 240‧‧‧ coating chamber
231, 232‧‧‧ pole
233‧‧‧ Subject
234‧‧‧ center plane
611, 612, 621, 622, 631, 632, 641, 642, 651, 652, 661, 662‧‧‧ power supplies
711, 712, 721, 722, 731, 732, 741, 742, 751, 752‧‧ ‧ anode strip
1000, 2000, 3000, 4000‧‧‧ reference number
1100‧‧‧first sputtering angle
2100‧‧‧second sputtering angle

The following sections of the present specification are intended to be complete and implementable by those of ordinary skill in the art, and are described below with reference to the accompanying drawings: Figures 1 - 2 illustrate a splash according to embodiments described herein. A schematic cross-sectional view of a deposition deposition apparatus. 3a-3b illustrate a method of coating a substrate at different points in time according to embodiments described herein. 4a-4b illustrate a method of coating a substrate at different points in time according to embodiments described herein. 5a-5b illustrate a method of coating a substrate in a first coating region and a second coating region in accordance with embodiments described herein. FIG. 6 is a flow chart showing a method of coating a substrate in a first coating region and a second coating region according to embodiments described herein.

1‧‧‧ first angle

2‧‧‧second angle

6‧‧‧ partition wall

7‧‧‧ valve

10, 20, 30, 40‧‧‧ cathode components

11, 21, 31, 41‧‧‧ Rotating target components

12, 22, 32, 42‧‧‧ rotating shaft

13, 23, 33, 43‧‧‧ magnetic components

14, 24, 34, 44, 130, 230‧‧‧ plane

100, 200‧‧‧ coated area

110, 210‧‧‧Substrate guidance system

120, 220‧‧‧ directions

140, 240‧‧‧ coating chamber

231, 232‧‧‧ pole

233‧‧‧ Subject

234‧‧‧ center plane

Claims (20)

A sputter deposition apparatus for coating a substrate (50) having two or more coated regions for coating the substrate, the sputter deposition apparatus comprising: a first substrate guiding system (110), for guiding the substrate to a first coating area (100), the first substrate guiding system defines a first substrate conveying direction (120); a second substrate guiding system (210), For guiding the substrate to a second coating area (200), the second substrate guiding system defines a second substrate conveying direction (220), wherein the second substrate conveying direction and the first substrate conveying direction are The same or different; a first cathode assembly (10) adapted to generate one or more plasma regions in the first coating region, the first cathode assembly comprising: a first rotating target assembly (11), Suitable for rotating a first rotating shaft (12) to rotate the target material; and a first magnetic component (13) fixedly disposed in the first rotating target assembly, the first magnetic component having a first major plane (14), the first main plane and a first The reference plane (130) forms a first angle (1) including the first axis of rotation and perpendicular to the first substrate transport direction; a second cathode assembly (20) adapted for the first One or more plasma regions are generated in the coating region, the second cathode assembly comprising: a second rotating target assembly (21) adapted to surround a second rotating shaft (22) to rotate the target material; a second magnetic component (23) fixedly disposed in the second rotating target assembly, the second magnetic component having a second principal plane (24), the second principal plane being parallel to the first principal plane; a three-cathode assembly (30) adapted to generate one or more plasma regions in the second coating region, the third cathode assembly comprising: a third rotating target assembly (31) adapted to surround a third a rotating shaft (32) for rotating the target material; and a third magnetic component (33) fixedly disposed in the third rotating target assembly, the third magnetic assembly having a third major plane (34), the first Three main planes and one The reference plane (230) forms a second angle (2) including the third axis of rotation and perpendicular to the second substrate transport direction, wherein the second angle is different from the first angle; a fourth cathode assembly (40) adapted to generate one or more plasma regions in the second coating region, the fourth cathode assembly comprising: a fourth rotating target assembly (41) adapted to surround a rotating shaft (42) for rotating the target material; and a fourth magnetic component (43) fixedly disposed in the fourth rotating target assembly, the fourth magnetic component having a fourth main plane (44), The fourth major plane is parallel to the third major plane. The sputter deposition apparatus of claim 1, wherein the first magnetic component is a unique magnetic component disposed in the first rotating target component, and the second magnetic component is disposed on the second rotating target The only magnetic component in the material component, the third magnetic component being the only magnetic component disposed in the third rotating target component, and the fourth magnetic component is the only magnetic component disposed in the fourth rotating target component . The sputter deposition apparatus of claim 1 or 2, further comprising a first coating chamber (140) and a second coating chamber (240), the first coating region being located In the first coating chamber, the second coating region is located in the second coating chamber, and the first cathode assembly and the second cathode assembly are disposed in the first coating chamber, the third A cathode assembly and the fourth cathode assembly are disposed in the second coating chamber. The sputter deposition apparatus of claim 1 or 2, wherein the first angle is a positive angle with respect to the first reference plane, the second angle being relative to the second reference plane Is a negative angle. The sputter deposition apparatus of claim 3, wherein the first angle is a positive angle with respect to the first reference plane, and the second angle is a negative value relative to the second reference plane angle. The sputter deposition apparatus of claim 4, wherein the first angle and the second angle have the same magnitude. The sputter deposition apparatus of claim 5, wherein the first angle and the second angle have the same numerical magnitude. The sputter deposition apparatus of claim 4, wherein the first angle is between 0 and 60 degrees, and the second angle is between 0 and 60 degrees. The sputter deposition apparatus of claim 1 or 2, wherein the first magnetic component comprises an inner magnetic pole and at least one outer magnetic pole, the inner magnetic pole of the first magnetic component has a central plane, coincident In the first main plane, the at least one outer magnetic pole of the first magnetic component is separated from the first main plane by a distance; the second magnetic component comprises an inner magnetic pole (231) and at least one outer magnetic pole (232), The inner magnetic pole of the second magnetic component has a central plane (234) coincident with the second principal plane, and the at least one outer magnetic pole of the second magnetic component is separated from the second principal plane by a distance; the third magnetic component The inner magnetic pole of the third magnetic component has a center plane overlapping the third main plane, and the at least one outer magnetic pole of the third magnetic component is spaced apart from the third main plane a distance; and the fourth magnetic component includes an inner magnetic pole and at least one outer magnetic pole, the inner magnetic pole of the fourth magnetic component has a center plane, coincident with the fourth main plane, the fourth The at least one outer magnetic pole of the magnetic component is spaced apart from the fourth major plane by a distance. The sputter deposition apparatus of claim 3, wherein the first magnetic component comprises an inner magnetic pole and at least one outer magnetic pole, the inner magnetic pole of the first magnetic component has a central plane, coincident with the first a main plane, the at least one outer magnetic pole of the first magnetic component is spaced apart from the first main plane; the second magnetic component includes an inner magnetic pole (231) and at least one outer magnetic pole (232), the second magnetic component The inner magnetic pole has a central plane (234) coincident with the second main plane, the at least one outer magnetic pole of the second magnetic component and the second main plane are separated by a distance; the third magnetic component includes an inner magnetic pole And at least one outer magnetic pole, the inner magnetic pole of the third magnetic component has a central plane, coincident with the third main plane, the at least one outer magnetic pole of the third magnetic component and the third main plane are separated by a distance; The fourth magnetic component includes an inner magnetic pole and at least one outer magnetic pole, and the inner magnetic pole of the fourth magnetic component has a central plane, which coincides with the fourth main plane, the fourth At least one component of the outer magnetic pole and the fourth main plane at a distance. The sputter deposition apparatus of claim 1 or 2, wherein the first rotating target assembly, the second rotating target assembly, the third rotating target assembly, and the fourth rotating target The assembly is adapted to rotate in a rotational direction, wherein the respective rotational directions of the first rotating target assembly, the second rotating target assembly, the third rotating target assembly, and the fourth rotating target assembly are independent The ground is selected from clockwise and counterclockwise. A method of coating a substrate in a first coating region and a separate second coating region, the method comprising: providing the substrate to the first coating region; sputtering with a first target material a surface (51) of the substrate, the first target material being sputtered on the surface in the first coating region at a first sputtering angle (1100) relative to the surface of the substrate, The first sputtering angle is a unique angle at which the target material is sputtered onto the surface of the substrate via a sputtering process in the first coating region; the substrate is provided to the second coating region; And sputtering the surface of the substrate with a second target material, the second target material being the same or different from the first target material, the second target material being in a state relative to the surface of the substrate a second sputtering angle (2100) is sputtered on the surface in the second coating region, the second sputtering angle being different from the first sputtering angle, wherein the second sputtering angle is Sputtering a target material into the second coating region via a sputtering process to The only angle on the surface plate based. The method of claim 12, wherein the first sputtering angle has a numerical value ranging from 0 to 90 degrees, and the second sputtering angle has a numerical value ranging from 90 to 180 degrees. The method of claim 13, wherein the second sputtering angle has a magnitude of 180 degrees minus a magnitude of the first sputtering angle. The method of claim 12, wherein the first sputtering angle is between 30 and 90 degrees, and the second sputtering angle is between 90 to 150 degrees. The method of claim 12, wherein the first coating zone is in a first coating chamber and the second coating zone is in a second coating chamber. . A use of a sputter deposition apparatus for applying a substrate in a first coating region and a separate second coating region, the sputter deposition apparatus comprising: a first substrate guide a guiding system (110) for guiding the substrate to a first coating area (100), the first substrate guiding system defining a first substrate conveying direction (120); and a second substrate guiding system (210) For guiding the substrate to a second coating area (200), the second substrate guiding system defines a second substrate conveying direction (220), wherein the second substrate conveying direction and the first substrate conveying The orientation is the same or different; a first cathode assembly (10) adapted to produce one or more plasma regions in the first coating region, the first cathode assembly comprising: a first rotating target assembly (11) a first rotating member (12) for rotating a target material; and a first magnetic member (13) fixedly disposed in the first rotating target assembly, the first magnetic member having a first a main plane (14), the first main plane The surface and a first reference plane (130) form a first angle (1), the first reference plane includes the first axis of rotation and perpendicular to the first substrate transport direction; a second cathode assembly (20), suitable for Forming one or more plasma regions in the first coating region, the second cathode assembly comprising: a second rotating target assembly (21) adapted to rotate around a second rotating shaft (22) a target material; and a second magnetic component (23) fixedly disposed in the second rotating target assembly, the second magnetic component having a second major plane (24), the second principal plane being parallel to the first a third cathode assembly (30) adapted to generate one or more plasma regions in the second coating region, the third cathode assembly comprising: a third rotating target assembly (31), Suitable for rotating a third rotating shaft (32) to rotate a target material; and a third magnetic component (33) fixedly disposed in the third rotating target assembly, the third magnetic component having a third main Plane (34), the first The main plane and a second reference plane (230) form a second angle (2), the second reference plane including the third axis of rotation and perpendicular to the second substrate transport direction, wherein the second angle is different from the a first angle; and a fourth cathode assembly (40) adapted to generate one or more plasma regions in the second coating region, the fourth cathode assembly comprising: a fourth rotating target assembly (41) Suitable for rotating a fourth rotating shaft (42) to rotate a target material; and a fourth magnetic component (43) fixedly disposed in the fourth rotating target assembly, the fourth magnetic component having a fourth a principal plane (44), the fourth principal plane being parallel to the third principal plane; and the method of performing the sputtering deposition apparatus comprising: providing the substrate to the first coating region; splashing with a first target material Photographing a surface (51) of the substrate, the first target material being sputtered on the surface in the first coating region at a first sputtering angle (1100) relative to the surface of the substrate , the first The sputtering angle is a unique angle at which a target material is sputtered onto the surface of the substrate via a sputtering process in the first coating region; the substrate is provided to the second coating region; and A second target material is sputtered to the surface of the substrate, the second target material being the same or different than the first target material, the second target material being a second splash relative to the surface of the substrate The firing angle (2100) is sputtered on the surface in the second coating region, the second sputtering angle is different from the first sputtering angle, and the second sputtering angle is the second coating a unique angle at which a target material is sputtered onto the surface of the substrate via a sputtering process; wherein the first angle determines the first sputtering angle, and wherein the second angle determines the second Sputtering angle. The use of the sputter deposition apparatus of claim 17, wherein the first sputtering angle plus 90 degrees is equal to the first angle, and the second sputtering angle plus 90 degrees is equal to the first Two angles. The use of the sputter deposition apparatus of claim 17, wherein the sputter deposition apparatus further comprises a first coating chamber (140) and a second coating chamber (240), the first a coating area is located in the first coating chamber, the second coating area is located in the second coating chamber, and the first cathode assembly and the second cathode assembly are disposed in the first coating chamber The third cathode assembly and the fourth cathode assembly are disposed in the second coating chamber. The use of a sputter deposition apparatus according to any one of claims 17 to 19, wherein the first magnetic component is a unique magnetic component disposed in the first rotating target component, the second magnetic component a single magnetic component disposed in the second rotating target assembly, the third magnetic component being disposed in the only one of the third rotating target assemblies, and the fourth magnetic component is disposed in the fourth rotation The only magnetic component in the target assembly.