CN109983150B

CN109983150B - Apparatus and method for depositing a layer on a substrate

Info

Publication number: CN109983150B
Application number: CN201680091011.2A
Authority: CN
Inventors: 约翰·D·布希; 弗兰克·施纳朋伯杰
Original assignee: Applied Materials Inc
Current assignee: Applied Materials Inc
Priority date: 2016-11-22
Filing date: 2016-11-22
Publication date: 2022-04-26
Anticipated expiration: 2036-11-22
Also published as: KR20190077575A; WO2018095514A1; CN109983150A

Abstract

The present disclosure provides an apparatus (100) for layer deposition on a substrate (10). The apparatus (100) comprises: a vacuum chamber (101); at least one sputter source (110), the at least one sputter source (110) being in the vacuum chamber (101), wherein the at least one sputter source (110) comprises a rotatable cylindrical cathode (112) and a magnet assembly (114) in the rotatable cylindrical cathode (112), and wherein the magnet assembly (114) is rotatable about a first axis of rotation (115); a controller (120), the controller (120) configured to adjust an angle of the magnet assembly (114) relative to a plane perpendicular to the substrate (10) by rotation of the magnet assembly (114) about the first axis of rotation (115); and a drive arrangement (130), the drive arrangement (130) being configured for a substantially continuous linear movement of the at least one sputter source (110) during the layer deposition process.

Description

Apparatus and method for depositing a layer on a substrate

Technical Field

Embodiments of the present disclosure relate to apparatus and methods for layer deposition on a substrate, and in particular to layer deposition on a substrate in an in-line deposition apparatus providing a substantially continuous flow of substrates.

Background

Several methods are known for depositing materials on a substrate. For example, the substrate may be coated by a Physical Vapor Deposition (PVD) process, a Chemical Vapor Deposition (CVD) process, a Plasma Enhanced Chemical Vapor Deposition (PECVD) process, or the like. The process may be performed in an apparatus or processing chamber in which the substrate to be coated is located. The deposition material is provided in a processing apparatus. A variety of materials, such as metals, including also oxides, nitrides or carbides of metals, may be used for deposition on the substrate. The coating material can be used in several applications and in several technical fields. For example, a substrate for a display may be coated by a Physical Vapor Deposition (PVD) process, such as a sputtering process, for example, to form a Thin Film Transistor (TFT) on the substrate.

With the development of new display technologies and the trend towards larger display sizes, there is a continuing need for layers or films used in displays that provide improved performance (e.g., performance with respect to electrical and/or optical characteristics). For example, uniformity of the deposited layer, such as uniform thickness and uniform material composition distribution, is beneficial. This is particularly suitable for thin layers, which may be used, for example, to form Thin Film Transistors (TFTs). In view of the above, it would be beneficial to deposit a layer with improved uniformity.

In view of the above, a new apparatus and method for layer deposition on a substrate that overcomes at least some of the problems in the art would be beneficial. The present disclosure is particularly directed to an apparatus and method that can improve and/or adjust the characteristics of a deposited layer.

Disclosure of Invention

In view of the above, an apparatus and method for layer deposition on a substrate are provided. Further aspects, benefits and features of the present disclosure are apparent from the claims, description and drawings.

According to one aspect of the present disclosure, an apparatus for layer deposition on a substrate is provided. The apparatus comprises: a vacuum chamber; at least one sputter source in the vacuum chamber, wherein the at least one sputter source comprises a rotatable cylindrical cathode and a magnet assembly in the rotatable cylindrical cathode, and wherein the magnet assembly is rotatable about a first axis of rotation; a controller configured to adjust an angle of the magnet assembly relative to a plane perpendicular to the substrate by rotation of the magnet assembly about the first axis of rotation; and a drive arrangement configured for substantially continuous linear movement of the substrate and/or the at least one sputtering source during a layer deposition process.

According to another aspect of the present disclosure, a method for layer deposition on a substrate is provided. The method comprises the following steps: adjusting an angle of a magnet assembly of a sputter source relative to a plane perpendicular to the substrate by rotation of the magnet assembly about a first axis of rotation; and moving the substrate and/or the at least one sputtering source during a layer deposition process, wherein the movement of the substrate and/or the at least one sputtering source is a substantially continuous linear movement.

Embodiments are also directed to apparatuses for performing the disclosed methods and include apparatus parts for performing each described method aspect. These method aspects may be performed by hardware components, a computer programmed by appropriate software, any combination of the two, or in any other manner. Further, embodiments in accordance with the present disclosure are also directed to methods for operating the described apparatus. The method for operating the described apparatus includes method aspects for performing each function of the apparatus.

Brief Description of Drawings

So that the manner in which the above recited features of the present disclosure can be understood in detail, a more particular description of the disclosure, briefly summarized above, may be had by reference to embodiments. The accompanying drawings relate to embodiments of the present disclosure and are described below:

fig. 1 shows a schematic view of an apparatus for layer deposition on a substrate according to embodiments described herein;

FIG. 2 shows a schematic view of an apparatus for layer deposition on a substrate according to further embodiments described herein;

FIG. 3 shows a schematic view of a sputter source and a substrate according to embodiments described herein;

FIG. 4 shows a schematic view of a sputter source and a substrate according to further embodiments described herein;

FIG. 5 shows a schematic view of a sputter source and a substrate according to still further embodiments described herein;

FIG. 6A shows a schematic view of an in-line deposition apparatus according to embodiments described herein;

FIG. 6B shows a schematic view of an arrangement of a sputter source according to embodiments described herein; and

fig. 7 shows a flow diagram of a method for layer deposition on a substrate according to embodiments described herein.

Detailed Description

Reference will now be made in detail to the various embodiments of the disclosure, one or more examples of which are illustrated in the figures. Within the following description of the drawings, like reference numerals refer to like parts. Only the differences with respect to the individual embodiments are generally described. Each example is provided by way of explanation of the disclosure, and is not meant as a limitation of the disclosure. In addition, features illustrated or described as part of one embodiment can be used on or in conjunction with other embodiments to yield yet a further embodiment. It is intended that the present specification include such modifications and variations.

With the development of new display technologies and the trend towards larger display sizes, there is a continuing need for layers or films used in displays that provide improved performance (e.g., performance with respect to electrical and/or optical characteristics). For example, uniformity of the deposited layer (such as uniform thickness and uniform material composition distribution) is beneficial.

The present disclosure integrates a movable magnet assembly within a rotatable cylindrical cathode in a deposition apparatus in which the substrate and/or the sputtering source perform a substantially continuous linear movement. Adjusting the angle of the magnet assembly relative to the substrate makes it possible to adjust the properties or characteristics of the deposited layer and/or the characteristics of the layer deposition process.

Embodiments described herein may be used for evaporation on large area substrates, for example, for display manufacturing. In particular, the substrate or carrier for which the structures and methods of the embodiments described herein are provided isA large area substrate. For example, the large area substrate or carrier may be generation 4.5 (corresponding to about 0.67 m)²Substrate (0.73 × 0.92m)), generation 5 (corresponding to about 1.4 m)²Substrate (1.1m × 1.3m)), generation 7.5 (corresponding to about 4.29 m)²Substrate (1.95m × 2.2m)), generation 8.5 (corresponding to about 5.7 m)²Substrate (2.2m × 2.5m)), or even generation 10 (corresponding to about 8.7 m)²Substrate (2.85m × 3.05 m)). Even higher generations (such as 11 th generation and 12 th generation) and corresponding substrate areas may be similarly implemented.

Fig. 1 shows a schematic view of an apparatus 100 for layer deposition on a substrate 10 according to embodiments described herein.

The apparatus 100 comprises a vacuum chamber 101, at least one sputter source 110 in the vacuum chamber 101, and a drive arrangement 130, the drive arrangement 130 being configured for substantially continuous linear movement of the substrate 10 and/or the at least one sputter source 110 during at least a part of the duration of the layer deposition process. The layer deposition process may be defined as a process of depositing a layer on the substrate 10. The at least one sputter source 110 includes a rotatable cylindrical cathode 112 and a magnet assembly 114 in the rotatable cylindrical cathode 112. The magnet assembly 114, which may also be referred to as a "yoke," the magnet assembly 114 is rotatable about a first axis of rotation 115. The apparatus 100 further comprises a controller 120, the controller 120 being configured to adjust the angle of the magnet assembly 114 with respect to a plane perpendicular to the substrate 10 by rotation of the magnet assembly 114 about the first rotation axis 115. In the example of fig. 1, the angle is about 0 °. The first rotation axis 115 may be substantially parallel to the base plate 10.

The apparatus 100 may include a drive or motor for rotating the magnet assembly 114 about the first axis of rotation 115. The drive or motor may be included in the rotatable cylindrical cathode 112 or an end block associated with the rotatable cylindrical cathode 112. According to some embodiments, the end-block may be considered to be part of the rotatable cylindrical cathode 112.

The rotatable cylindrical cathode 112 may be rotatable about a second axis of rotation. The second axis of rotation may coincide with or be the same as the first axis of rotation 115 about which the magnet assembly 114 rotates. During the layer deposition process, the rotatable cylindrical cathode 112 may be rotated about a second axis of rotation. The rotatable cylindrical cathode 112 and the magnet assembly 114 are rotatable about respective axes of rotation independently of each other. According to some embodiments, which can be combined with other embodiments described herein, the first axis of rotation 115 of the magnet assembly 114 can be a substantially vertical axis of rotation and/or the second axis of rotation of the rotatable cylindrical cathode 112 can be a substantially vertical axis of rotation.

The rotatable cylindrical cathode 112 may comprise a target material. The rotatable cylindrical cathode 112 may also be referred to as a "rotatable target". The material of the target may comprise a material selected from the group consisting of: aluminum, silicon, tantalum, molybdenum, niobium, titanium, copper silver, zinc, MoW, ITO, IZO, and IGZO. In some embodiments, the material is present in the target material in a solid phase. By bombarding the rotatable cylindrical cathode 112 or the rotatable target with energetic particles, atoms of target material (i.e. deposition material) are ejected from the rotatable cylindrical cathode 112 or the rotatable target and are supplied into the plasma zone 2. In a reactive sputtering process, one or more process gases (e.g., at least one of oxygen and nitrogen) may be supplied to the plasma region 2. Reactive sputtering processes are deposition processes that sputter material under a process atmosphere. As an example, the process atmosphere may include one or more process gases, such as at least one of oxygen and nitrogen, to deposit a material or layer comprising an oxide or nitride of the deposited material.

According to some embodiments, which can be combined with other embodiments described herein, the plasma region 2 can be rotated about an axis of rotation (such as the first axis of rotation 115) by rotation of the magnet assembly 114. In some embodiments, rotation of the plasma region 2 about the axis of rotation includes rotation of the magnet assembly 114 about the first axis of rotation 115. Specifically, rotation of magnet assembly 114 provides rotation of plasma region 2 about first axis of rotation 115. The rotational speed of the plasma region 2 can be adjusted by adjusting the rotational speed of the magnet assembly 114.

A magnet assembly 114 is provided in the rotatable cylindrical cathode 112. A rotatable cylindrical cathode 112 with a magnet assembly 114 may provide magnetron sputtering to deposit the layer. As used herein, "magnetron sputtering" refers to sputtering performed using a magnetron (i.e., magnet assembly 114), which is a unit capable of generating a magnetic field. Such a magnet assembly may be composed of one or more permanent magnets. These permanent magnets may be arranged behind the target material of the target, e.g. within the rotatable cylindrical cathode 112 or the rotatable target, such that free electrons are trapped within the generated magnetic field generated below the surface of the rotatable cylindrical cathode 112. A permanent magnet arrangement behind the target material of the target is understood to be an arrangement in which the target material is arranged between the permanent magnet and the process zone or substrate 10 when the plasma zone 2 is directed towards the process zone or substrate 10. In other words, when the plasma region 2 is directed toward the processing region or substrate 10, the processing region or substrate 10 is not directly exposed to the permanent magnet, but the target is interposed between the permanent magnet and the processing region or substrate.

The deposition material is provided in the plasma zone 2. As an example, the magnet assembly 114 of the rotatable cylindrical cathode 112 may be used to confine the plasma to improve sputtering conditions. In some embodiments, the plasma region 2 may be understood as a sputtering plasma or sputtering plasma region provided by a rotatable cylindrical cathode 112. Plasma confinement can also be used to adjust the particle distribution of the material to be deposited on the substrate 10. In some embodiments, the plasma region 2 corresponds to a region including atoms of target material (deposition material) ejected or released from the target.

In some embodiments, the plasma zone 2 extends in the circumferential direction of the rotatable cylindrical cathode 112. As an example, the plasma zone 2 does not extend over the entire circumference of the rotatable cylindrical cathode 112 in the circumferential direction. According to some embodiments, the plasma zone 2 extends over less than a third of the entire circumference of the rotatable cylindrical cathode 112, and in particular less than a quarter of the entire circumference. The plasma zone 2 may face the processing zone or the plasma zone 2 faces away (is not directed towards) the processing zone based on the rotational position of the plasma zone 2 provided or defined by the rotational position of the magnet assembly 114.

According to some embodiments, which can be combined with other embodiments described herein, the rotatable cylindrical cathode 112 can be connected to a DC power supply 118 such that sputtering can be performed as DC sputtering using one or more anodes 116. According to some embodiments, which can be combined with other embodiments described herein, the rotatable cylindrical cathode can be connected to an AC power source (not shown) such that the rotatable cylindrical cathode can be biased in an alternating manner, e.g., for MF (intermediate frequency) sputtering, RF (radio frequency) sputtering, etc.

According to some embodiments, the drive arrangement 130 is configured for a substantially continuous linear movement of the substrate 10 during at least a part of the duration of the layer deposition process. In particular, the drive arrangement 130 may be configured for a substantially continuous linear movement of the substrate 10 past the at least one sputtering source 110 during the layer deposition process. As an example, the drive arrangement 130 may be configured for moving the substrate 10 past the at least one sputter source 110 in the transport direction 1. The apparatus 100 may be an in-line deposition apparatus or system configured to provide a substantially continuous flow of substrates through the at least one sputtering source 110. In other words, a plurality of successive substrates may be moved substantially continuously past the at least one sputtering source 110 to provide a continuous flow of substrates.

As understood throughout this disclosure, the term "substantially continuous movement" refers to a non-stationary (non-stationary) condition in which the substrate 10 is moved during at least a portion of the duration of the layer deposition process. In other words, the substrate 10 is advanced or advanced along the transport direction 1 while a layer is deposited on the substrate 10. The term "substantially" should take into account that the substrate speed is not constant. For example, the speed may vary, possibly even being zero for a short time. However, there is a net movement of the substrate 10 in the transport direction 1.

According to some embodiments, which can be combined with other embodiments described herein, a substantially continuous linear movement of the substrate 10 is provided during at least 50% of the duration of the layer deposition process, in particular during at least 75% of said duration, more in particular during at least 90% of said duration. As an example, a substantially continuous linear movement of the substrate 10 is provided during substantially the entire duration of the layer deposition process. The duration of the layer deposition process may be defined as the time it takes to deposit a layer on a separate substrate. According to some embodiments, which can be combined with other embodiments described herein, the substrate speed can be at least 0.005m/min, in particular at least 0.01m/min, more in particular at least 1 m/min. For example, the substrate speed may be in a range between 0.005m/min and 15m/min, in particular in a range between 0.01m/min and 10m/min, more in particular in a range between 1m/min and 3 m/min. In some embodiments, the substrate speed is substantially constant during the layer deposition process.

According to some embodiments, which can be combined with other embodiments described herein, the apparatus 100 comprises one or more linear transport paths or transport rails extending through the vacuum chamber 101. As used throughout this disclosure, the term "track" may be defined as a space or device that receives or supports a substrate 10 or a carrier 20 (the carrier 20 having a substrate 10 positioned on the carrier 20). As an example, the track may mechanically (using, for example, rollers) or contactlessly (using, for example, a magnetic field and corresponding magnetic force) receive or support the carrier 20.

The drive arrangement 130 may be configured for transporting the substrate 10 or the carrier 20 along one or more linear transport paths or transport rails in the transport direction 1. As an example, the drive arrangement 130 may be configured to transport the carrier 20 in the transport direction 1. In some embodiments, the drive arrangement 130 may be a magnetic drive system configured to move the carrier 20 along one or more linear transport paths or transport tracks without contact.

The carrier 20 is configured to support the substrate 10, for example during a layer deposition process. The carrier 20 may comprise a plate or frame configured for supporting the substrate 10, e.g. using a support surface provided by the plate or frame. Optionally, the carrier 20 may comprise one or more holding devices (not shown) configured for holding the substrate at the plate or frame. The one or more holding devices may comprise at least one of mechanical, electrostatic, electrodynamic (van der waals), electromagnetic devices. As an example, the one or more holding devices may be mechanical and/or magnetic clamps.

In some embodiments, the carrier 20 comprises an electrostatic chuck (E-chuck) or the carrier 20 is an electrostatic chuck (E-chuck). The E-chuck may have a support surface for supporting the substrate 10 on the support surface. In one embodiment, an E-chuck includes a dielectric body having an electrode embedded in the dielectric body. The dielectric body may be made of a dielectric material, preferably a high thermal conductivity dielectric material such as pyrolytic boron nitride, aluminum nitride, silicon nitride, aluminum oxide or equivalent materials. The electrodes may be coupled to a power source that provides power to the electrodes to control the attraction force. The adsorption force is an electrostatic force acting on the substrate 10 to fix the substrate 10 on the support surface.

According to some embodiments, which can be combined with other embodiments described herein, the substrate 10 is in a generally vertical orientation, e.g., during the layer deposition process and/or during transport of the layer deposition 10 through the vacuum chamber 101. As used throughout this disclosure, "generally vertical" is understood to allow deviations of ± 20 ° or less, e.g., ± 10 ° or less, from the vertical direction or orientation, particularly when referring to, e.g., substrate orientation. For example, the deviation may be provided because a substrate support or carrier with some deviation from a vertical orientation may result in a more stable substrate position or a downward facing substrate orientation may even better reduce particles on the substrate during deposition. However, the substrate orientation, for example during a layer deposition process, is considered to be substantially vertical, which is considered to be different from a horizontal substrate orientation, which may be considered to be horizontal ± 20 ° or less.

In particular, as used throughout this disclosure, terms such as "vertical direction" or "vertically oriented" are understood to be distinguished from "horizontal direction" or "horizontal orientation". The vertical direction may be substantially parallel to gravity.

According to some embodiments, which can be combined with other embodiments described herein, the apparatus 100 is an in-line deposition apparatus configured for dynamic sputter deposition on a substrate, in particular for dynamic vertical sputter deposition. The layer deposition process may be a dynamic layer deposition process. A dynamic sputter deposition process may be understood as a sputter deposition process in which the substrate 10 is moved through the processing zone along the transport direction 1 while a layer deposition process is carried out. In other words, the substrate 10 is not stationary during the layer deposition process.

An in-line deposition apparatus or a dynamic deposition apparatus according to embodiments described herein provides uniform processing of a substrate 10 (e.g., a large area substrate such as a rectangular glass plate). The processing tool, such as the at least one sputtering source 110, extends primarily in one direction (e.g., a vertical direction) and the substrate 10 is moved in a different second direction (e.g., transport direction 1, which transport direction 1 may be a horizontal direction).

The in-line deposition apparatus or the dynamic deposition apparatus has the following advantages: process uniformity (e.g., layer uniformity) in one direction is limited by the ability to move the substrate 10 at a constant speed and keep the at least one sputtering source stable. The layer deposition process may be determined by the movement of the substrate 10 past at least one sputtering source 110. For an in-line deposition apparatus, the deposition or processing region may be a substantially linear region for processing, for example, a large area rectangular substrate. The processing region may be a region in which deposition material is ejected from at least one sputtering source to be deposited on the substrate 10. In contrast, for a static deposition apparatus, the deposition area or the processing area substantially corresponds to the area of the substrate 10.

In some embodiments, additional differences in-line deposition apparatus for dynamic deposition as compared to static deposition apparatus may be determined by the fact that: an in-line deposition apparatus for dynamic deposition may have one single vacuum chamber with different zones, wherein the vacuum chamber does not comprise means for vacuum tight sealing of one zone of the vacuum chamber with respect to another zone of the vacuum chamber. In contrast, a static deposition apparatus may have a first vacuum chamber and a second vacuum chamber, which may be vacuum tightly sealed with respect to each other using, for example, valves.

Fig. 2 shows a schematic view of an apparatus 200 for layer deposition on a substrate 10 according to further embodiments described herein. The device 200 is similar to the device described with respect to fig. 1 and a description of similar or identical aspects is not repeated.

The apparatus 200 comprises a vacuum chamber 101, at least one sputter source 210 in the vacuum chamber 101, and a drive arrangement 230, the drive arrangement 230 being configured for substantially continuous linear movement of the at least one sputter source 210 during at least a portion of the duration of the layer deposition process. The drive arrangement 230 may be configured for substantially continuously linearly moving the at least one sputtering source 210 across the substrate 10 during at least a portion of the duration of the layer deposition process. In particular, the drive arrangement 230 may be configured for moving the at least one sputter source 210 and in particular the rotatable cylindrical cathode 112 with the magnet assembly 114 positioned in the rotatable cylindrical cathode 112 and optionally the anode 116 across the substrate 10 in the transport direction 1. As an example, the drive arrangement 230 may be configured to synchronously move the rotatable cylindrical cathode 112, the magnet assembly 114 and optionally the anode 116 in the transport direction 1.

According to some embodiments, which can be combined with other embodiments described herein, the substantially continuous linear movement of the at least one sputter source 210 is provided during at least 50% of the duration of the layer deposition process, in particular during at least 75% of said duration, and more in particular during at least 90% of said duration. As an example, a substantially continuous linear movement of the at least one sputtering source 210 is provided during substantially the entire duration of the layer deposition process. According to some embodiments, which can be combined with other embodiments described herein, the velocity of the at least one sputter source 210 can be at least 0.005m/min, particularly at least 0.01m/min, and more particularly at least 1 m/min. As an example, the velocity of the at least one sputter source 210 may be in a range between 0.005m/min and 15m/min, in particular in a range between 0.01m/min and 10m/min, in particular in a range between 1m/min and 3m/min, and more in particular in a range between 0.01m/min and 1 m/min. In some embodiments, the velocity of the at least one sputtering source 210 is substantially constant during the layer deposition process.

Although the example of fig. 1 illustrates movement of the substrate 10 when the at least one sputtering source 110 is stationary, and the example of fig. 2 illustrates movement of the at least one sputtering source 110 when the substrate 10 is stationary, the disclosure is not limited thereto. In particular, both the at least one sputter source 110 and the substrate 10 may be moved relative to each other in a respective linear movement in order to provide a substantially continuous linear movement as a relative movement.

Figure 3 shows a schematic view of a sputter source and a substrate 10 according to embodiments described herein. Figure 4 shows a schematic view of a sputter source and a substrate 10 according to further embodiments described herein.

The apparatus comprises a controller configured to adjust the angle of the magnet assembly 114 with respect to a plane 301 perpendicular to the substrate 10 by rotation of the magnet assembly 114 about the first rotation axis 115. The plane 301 is parallel to the first rotation axis 115 and perpendicular with respect to the substrate 10, and in particular perpendicular with respect to the substrate surface on which the layer is deposited during the layer deposition process. The first rotation axis 115 may lie in a plane 301.

According to some embodiments, which can be combined with other embodiments described herein, the controller is configured to rotate the magnet assembly 114 about the first rotation axis 115 in a first direction 3 and/or a second direction 4 opposite to the first direction 3. The first direction 3 may be a clockwise direction and the second direction 4 may be a counter-clockwise direction, or the first direction 3 may be a counter-clockwise direction and the second direction 4 may be a clockwise direction.

In the example of fig. 3, the angle of the magnet assembly 114 relative to the plane 301 is 0 °. In other words, the magnet assembly 114 and/or the plasma region 2 are substantially symmetrical with respect to the plane 301. In the example of fig. 4, the angle of the magnet assembly 114 with respect to the plane 301 is greater than 0 °. The angle may be defined between the plane 301 and a plane of symmetry 302 of the magnet assembly 114 and/or the plasma region 2. The angle may be in a range between 0 ° and 80 °, in particular in a range between 10 ° and 45 °, and more in particular in a range between 10 ° and 20 °.

According to some embodiments, which can be combined with other embodiments described herein, the controller is configured to adjust the angle of the magnet assembly 114 with respect to the plane 301 perpendicular to the substrate 10 based on one or more layer characteristics of a layer to be deposited on the substrate 10 and/or one or more sputtering characteristics of a layer deposition process and/or process control parameters of the layer deposition process.

The one or more layer characteristics are selected from the group consisting of: layer thickness, layer uniformity, layer structure, and any combination thereof. The one or more sputtering characteristics are selected from the group consisting of: ion bombardment properties, target erosion, substrate temperature, and any combination of the above. The one or more process control parameters are selected from the group consisting of: sputtering power, process pressure, partial pressure of the reaction gas, and any combination of the above. As an example, one or process control parameters may be varied with magnet angle to optimize layer properties.

According to some embodiments, which can be combined with other embodiments described herein, the magnet assembly 114 can be stationary or moving (i.e., rotating) during the layer deposition process. As an example, in a stationary housing, the controller may be configured to hold the magnet assembly 114 stationary during at least a portion of the duration of the layer deposition process. The magnet assembly 114 may be set at a substantially fixed angle during deposition, where the angle may be selected to optimize, for example, particular layer properties and/or sputtering characteristics. For example, as shown in fig. 3, an angle of 0 ° (perpendicular to the substrate 10) may maximize ion bombardment and/or another sputtering characteristic to deposit a layer having a particular desired property. Wider angles in the negative or positive direction (i.e., pointing opposite or the same as transport direction 1 as shown in fig. 4) may reduce ion bombardment and/or other sputtering characteristics to produce films with different desired properties. The angle may be adjusted before the layer deposition process begins. The magnet assembly 114 may be held at a substantially fixed angle, which may be greater than 0 with respect to a plane perpendicular to the substrate, to sputter onto the substrate 10 at a substantially constant angle across the substrate 10.

In another example, the controller may be configured to move the magnet assembly 114 in the first direction 3 and/or the second direction 4 during at least a portion of the duration of the layer deposition process. In some embodiments, the magnet assembly 114 may oscillate back and forth or rotate through a selected range of angles in an oscillating rotational motion to obtain different types of layer properties. The oscillating rotational movement is further explained with respect to fig. 5. This may provide a homogenizing effect or other properties that cannot be achieved by the fixed magnet assembly. In the case of moving the magnet assembly during deposition, the process control parameters may be adjusted or changed along with the angle of the magnet assembly 114. For example, the sputtering power, process pressure, partial pressure of the reactant gases, or other parameters may be varied with the angle of the magnet assembly 114 to further optimize the desired film properties.

According to some embodiments, which can be combined with other embodiments described herein, the angle of the magnet assembly 114 can be adjusted over time, such as gradually to compensate for target erosion.

In some embodiments, the device includes one or more anodes 116. The apparatus may be configured to change the position of one or more anodes 116 relative to a plane 301 perpendicular to the substrate 10. As an example, the one or more anodes 116 may be rotatable about a third axis of rotation, which may be coincident with or the same as the first axis of rotation 115. According to some embodiments, the controller may be configured to rotate the one or more anodes 116 and magnet assemblies 114 about respective axes of rotation synchronously or asynchronously during the deposition process. As an example, the relative orientation or position of the one or more anodes 116 with respect to the magnet assembly 114 may remain substantially unchanged even if the magnet assembly 114 is rotated. In other words, when the magnet assembly 114 is rotated a certain angle about the first axis of rotation 115, the one or more anodes 116 are also rotated the same or a similar angle about the third axis of rotation. The use of one or more anodes 116 may reduce electron bombardment and lower the temperature of the substrate 10.

According to further embodiments, the one or more anodes 116 may be rotatable about a third axis of rotation and may be stationary during the deposition process. As an example, the relative orientation of the one or more anodes 116 with respect to the magnet assembly 114 may change as the magnet assembly 114 rotates. In some embodiments, the rotational position of the one or more anodes 116 relative to the third axis of rotation and/or the position of the one or more anodes 116 relative to the plane 301 may be stationary during the deposition process.

As shown in fig. 4, in some embodiments, the one or more anodes 116 can include a first anode and a second anode. The first anode and the second anode may be located on opposite sides of the rotatable cylindrical cathode 112. As an example, the first anode and the second anode may be positioned substantially symmetrically with respect to plane 301, plane of symmetry 302, magnet assembly 114, and/or first axis of rotation 115.

In some embodiments, an angle may be provided between the plane 301 and a line connecting the first anode and the second anode (such as at a center or a center point of the first anode and the second anode). The line may pass through the first rotation axis 115. The angle may be adjusted before, during and/or after the deposition process, for example by rotation of the first and second anodes about the third axis of rotation and/or by displacement of the first and second anodes (e.g. parallel to the plane 301). The angle may be in a range between 0 ° and 90 °, in particular in a range between 10 ° and 80 °, and more in particular in a range between 10 ° and 45 °. An angle of 0 deg. indicates a situation where the line connecting the first anode and the second anode is parallel to the plane 301, i.e. perpendicular to the substrate 10 or the substrate surface. An angle of 90 deg. indicates a situation where the line connecting the first anode and the second anode is perpendicular to the plane 301, i.e. parallel to the substrate 10 or the substrate surface.

Figure 5 shows a schematic view of a sputter source and a substrate 10 according to further embodiments described herein.

According to some embodiments, which can be combined with other embodiments described herein, the at least one sputter source comprises a first sputter source 510 and a second sputter source 520. The controller may be configured to adjust the angle of the magnet assembly 114 of the first sputter source 510 to be different than the angle of the magnet assembly 114 of the second sputter source 520. As an example, where two or more rotatable cylindrical cathodes 112 are adjacent to each other, the angle of the magnet assembly may be set to the same or different angles, e.g., to further optimize layer properties.

Adjusting the rotational position of the components in adjacent rotatable cylindrical cathodes may be used for at least one of: (i) counteracting the influence of one rotatable cylindrical cathode on the other; (ii) enhancing the positive effect of two rotatable cylindrical cathodes (e.g., focusing deposition from both onto one area of the deposition zone); (iii) producing a layered structure of the same material with different crystal orientations or other layer properties; (iv) minimizing cross-contamination of two different target materials adjacent to each other.

The magnet assembly 114 of the first sputter source 510 and the magnet assembly 114 of the second sputter source 520 may be stationary during the layer deposition process or may be moving/rotating. As an example, the magnet assembly 114 of the first sputter source 510 may be moved between the first rotational position 502 and the second rotational position 503 in a first oscillating rotational motion about the first rotation axis 115. The magnet assembly 114 of the second sputter source 520 may be moved in a second oscillating rotational motion about the first axis of rotation 115 between the third rotational position 504 and the fourth rotational position 505. The magnet assembly 114 of the first sputtering source 510 and the magnet assembly 114 of the second sputtering source 520 can be rotated simultaneously. By way of example, the magnet assembly 114 of the first sputter source 510 and the magnet assembly 114 of the second sputter source 520 are rotated simultaneously in opposite or the same rotational direction (such as a first direction and/or a second direction).

According to some embodiments, which can be combined with other embodiments described herein, a first angle between the first rotational position 502 and the second rotational position 503 with respect to the first rotational axis 115 of the first sputter source 510 is in a range between 1 ° and 180 °. A second angle between the third rotational position 504 and the fourth rotational position 505 relative to the first axis of rotation 115 of the second sputter source 520 may be in the range of 1 ° to 180 °. As examples, at least one of the first angle and the second angle is about 10 degrees or less ("narrow angle") or about 45 degrees ("wide angle"). In some embodiments, the first angle and the second angle may be substantially the same, or may be different.

The term "oscillating rotational movement" may be understood as a repeated change (e.g. over time) in rotational position of the magnet assembly between two rotational positions, such as between a first rotational position 502 and a second rotational position 503 and between a third rotational position 504 and a fourth rotational position 505. The term "oscillating rotational movement" may also be understood as a repeated variation (e.g. over time) of the rotational position of the magnet assembly around a center, such as a line or plane (e.g. plane 301) perpendicular to the surface of the substrate 10 and intersecting the respective first rotational axis. The term "oscillating rotational motion" as used throughout this disclosure may also be referred to as "wobble.

In some embodiments, the first and second oscillating rotational movements have a frequency of at least 1/60Hz, in particular at least 1/10Hz, and more particularly at least 1 Hz. In some embodiments, the first oscillatory rotational motion and the second oscillatory rotational motion have a frequency of less than 5 Hz. As an example, the first oscillatory rotational motion has a first frequency and the second oscillatory rotational motion has a second frequency. The first and second frequencies may be substantially the same, or may be different.

During the oscillating rotary motion, the plasma zone 2 is moved or swept in an oscillating motion within the processing zone in which the substrate 10 is located. As an example, the deposition material is deposited on the substrate 10 during the first and second oscillating rotary motions.

Fig. 6A shows a schematic view of an in-line deposition apparatus 600 according to embodiments described herein.

The inline deposition apparatus 600 includes a vacuum chamber 601, the vacuum chamber 601 having a processing zone for processing the substrate 10. The substrate 10 is moved into a processing zone having an array of one or more rotatable cylindrical cathodes 612. Each of the one or more rotatable cylindrical cathodes 612 provides a respective plasma region in which deposition material is supplied during operation of the one or more rotatable cylindrical cathodes 612. The controller is configured for rotating the magnet assemblies of the one or more rotatable cylindrical cathodes 612 about respective first axes of rotation, e.g. before and/or during a layer deposition process. The vacuum chamber 601 may also be referred to as a "process chamber".

Exemplarily, one vacuum chamber 601 is shown for depositing the layers in the vacuum chamber. An additional vacuum chamber 603 may be provided adjacent to vacuum chamber 601. The atmosphere in the vacuum chamber 601, such as a process atmosphere for a reactive sputtering process, may be controlled by creating a technical vacuum (e.g., with a vacuum pump connected to the vacuum chamber 601) and/or by inserting one or more process gases in a processing zone in the vacuum chamber 601. The one or more process gases may include a gas used to create a process atmosphere for a reactive sputtering process. Within the vacuum chamber 601, a drive arrangement may be provided for transporting the carrier 20 (with the substrate 10 on the carrier 20) into and out of the vacuum chamber 601.

One or more rotatable cylindrical cathodes 612 and anodes 616 may be electrically connected to a DC power supply 628. The sputtering for forming the layer on the substrate 10 may be performed as DC sputtering. One or more rotatable cylindrical cathodes 612 are connected to a DC power supply 628 along with an anode 616 to collect electrons during sputtering. According to still further embodiments, which can be combined with other embodiments described herein, at least one of the one or more rotatable cathodes can have a corresponding separate DC power source.

Fig. 6A shows a plurality of rotatable cylindrical cathodes. Particularly for large area deposition applications, an array of rotatable cylindrical cathodes may be provided within the vacuum chamber 601. In some examples, two or more rotatable cylindrical cathodes are provided. As an example, 4, 5, 6, 12 or even more rotatable cylindrical cathodes may be provided.

Figure 6A shows an arrangement of sputter sources according to embodiments described herein. The arrangement may be used with the in-line deposition apparatus described with respect to fig. 6A.

According to some embodiments, which can be combined with other embodiments described herein, the at least one sputter source is two or more sputter sources. The controller may be configured to adjust the angle of the magnet assembly of at least some of the two or more sputtering sources to be different. In particular, the arrangement is asymmetric and/or unbalanced. As an example, the two or more sputtering sources may include one or more first sputtering sources, wherein the magnet assemblies have substantially the same angle, e.g., a first angle, with respect to a plane perpendicular to the substrate 10. The two or more sputtering sources may include one or more second sputtering sources, wherein the magnet assembly has substantially the same angle, e.g., a second angle, with respect to a plane perpendicular to the substrate. The first angle and the second angle may be different.

In the example of fig. 6B, the angles of the magnet assemblies of the upper 4 sputtering sources (the first 4 sputtering sources; "first sputtering source(s)", with respect to the transport direction 1) are substantially the same. The angle of the magnet assemblies of the lower sputtering sources (the last sputtering source with respect to the transport direction 1; the "second sputtering source(s)") is different.

In some embodiments, a first material layer may be deposited on a substrate using one or more first sputtering sources having a first angle, and a second material layer may be deposited on the substrate using one or more second sputtering sources having a second angle. In particular, a first layer of material may be deposited with the plasma region of the one or more first sputter sources facing in a first direction, and a second layer of material may be deposited with the plasma region of the one or more second sputter sources facing in a second direction, the second direction being different from the first direction. The selected angle may affect the layer properties. In other words, the layer properties may adjust or provide an angle of a magnet assembly of the sputtering source, such as the first angle and the second angle.

Fig. 7 shows a flow diagram of a method 700 for layer deposition on a substrate according to embodiments described herein. The method 700 may be implemented using an apparatus for layer deposition according to embodiments described herein.

The method 700 includes adjusting an angle of a magnet assembly of a sputtering source relative to a plane perpendicular to the substrate by rotation of the magnet assembly about a first axis of rotation in block 710, and moving the substrate and/or at least one sputtering source during the layer deposition process in block 720, wherein the movement of the substrate and/or at least one sputtering source is a substantially continuous linear movement.

According to some embodiments, the substrate is moved past the sputter source during at least a portion of the duration of the layer deposition process. In a further embodiment, the sputter source is moved past the substrate during at least a portion of the duration of the layer deposition process. In still further embodiments, both the substrate and the sputter source are moved relative to each other during at least a portion of the duration of the layer deposition process.

According to some embodiments, which can be combined with other embodiments described herein, the angle of the magnet assembly remains substantially constant during the layer deposition process. In other words, the magnet assembly is stationary or fixed in position. The angle may be adjusted before the deposition process begins. In other embodiments, the angle of the magnet assembly is changed during the layer deposition process. In other words, during the layer deposition process, the magnet assembly is rotated around the first rotation axis.

In some embodiments, adjusting the angle of the magnet assembly includes rotating the magnet assembly in a first direction about a first axis of rotation and/or rotating the magnet assembly in a second direction opposite the first direction about the first axis of rotation. As an example, the magnet assembly may perform an oscillating or oscillating motion about the first axis of rotation during the layer deposition process. In other examples, the angle of the magnet assembly is set before the layer deposition process begins. The angle of the magnet assembly may be kept substantially constant or fixed during the layer deposition process.

According to some embodiments, which can be combined with other embodiments described herein, the angle of the magnet assembly is adjusted based on one or more layer characteristics of a layer to be deposited on the substrate and/or one or more sputtering characteristics of the layer deposition process and/or process control parameters of the layer deposition process.

The one or more layer properties may be selected from the group consisting of: layer thickness, layer uniformity, layer structure, and any combination of the foregoing. The one or more sputtering characteristics may be selected from the group consisting of: ion bombardment properties, target erosion, substrate temperature, and any combination of the foregoing. The one or more process control parameters may be selected from the group consisting of: sputtering power, process pressure, partial pressure of the reaction gas, and any combination of the foregoing. As an example, one or more process control parameters may be varied with magnet angle to optimize layer properties.

According to embodiments described herein, a method for layer deposition on a substrate may be performed using a computer program, software, a computer software product, and an associated controller, which may have a CPU, a memory, a user interface, and input and output devices, in communication with corresponding components of an apparatus for processing large area substrates.

The present disclosure integrates a movable magnet assembly within a rotatable cylindrical cathode in a deposition apparatus in which the substrate and/or the sputtering source perform a substantially continuous linear movement. The angle of the magnet assembly relative to the substrate is adjusted so that the properties or characteristics of the deposited layer and/or the characteristics of the layer deposition process can be adjusted.

While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.

Claims

1. An apparatus for layer deposition on a substrate, comprising:

a vacuum chamber;

at least one sputter source in the vacuum chamber, wherein the at least one sputter source comprises a rotatable cylindrical cathode and a magnet assembly in the rotatable cylindrical cathode, and wherein the magnet assembly is rotatable about a first axis of rotation;

a controller configured to adjust an angle of the magnet assembly relative to a plane perpendicular to the substrate by rotation of the magnet assembly about the first axis of rotation; and

a drive arrangement configured for substantially continuous linear movement of the at least one sputtering source in a horizontal direction across the substrate during at least 90% of a duration of a layer deposition process.

2. The apparatus of claim 1, wherein the apparatus is an in-line deposition apparatus configured to provide a substantially continuous flow of substrates.

3. The apparatus of any one of claims 1 to 2, wherein the controller is configured to rotate the magnet assembly about the first axis of rotation in a first direction and a second direction opposite the first direction.

4. The apparatus of any of claims 1 to 2, wherein the controller is configured to rotate the magnet assembly about the first axis of rotation during at least a portion of a duration of the layer deposition process.

5. The apparatus of any of claims 1 to 2, wherein the controller is configured to hold the magnet assembly stationary during at least a portion of a duration of the layer deposition process.

6. The apparatus of any of claims 1-2, wherein the controller is configured to adjust the angle of the magnet assembly relative to the plane perpendicular to the substrate based on one or more layer characteristics of a layer to be deposited on the substrate.

7. The apparatus of any of claims 1 to 2, wherein the at least one sputter source comprises a first sputter source and a second sputter source.

8. The apparatus of claim 7, wherein the controller is configured to adjust the angle of the magnet assembly of the first sputtering source to be different from the angle of the magnet assembly of the second sputtering source.

9. The apparatus of any of claims 1-2, further comprising one or more anodes, wherein the apparatus is configured to change a position of the one or more anodes relative to the plane perpendicular to the substrate.

10. A method for layer deposition on a substrate, comprising:

adjusting an angle of a magnet assembly of a sputter source relative to a plane perpendicular to the substrate by rotation of the magnet assembly about a first axis of rotation; and

moving the at least one sputtering source during a layer deposition process, wherein the moving is a substantially continuous linear movement across the substrate in a horizontal direction during at least 90% of the duration of the layer deposition process.

11. The method of claim 10, wherein the at least one sputter source comprises a first sputter source and a second sputter source.

12. The method of claim 10, wherein the adjustment of the angle of the magnet assembly comprises at least one of:

rotating the magnet assembly in a first direction about the first axis of rotation; and

rotating the magnet assembly about the first axis of rotation in a second direction opposite the first direction.

13. The method of claim 10, wherein the angle of the magnet assembly remains substantially constant during the layer deposition process.

14. The method of claim 10, wherein the angle of the magnet assembly is adjusted based on one or more layer characteristics of a layer to be deposited on the substrate.

15. The method of claim 14, wherein the one or more layer characteristics are selected from the group consisting of: layer thickness, layer uniformity, layer structure, and any combination of the foregoing.

16. The method of claim 10, wherein said substantially continuous linear movement is provided during at least 50% of the duration of said layer deposition process.