KR101950857B1 - Sputter deposition source, sputtering apparatus and method of operating thereof - Google Patents

Sputter deposition source, sputtering apparatus and method of operating thereof Download PDF

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KR101950857B1
KR101950857B1 KR1020177030537A KR20177030537A KR101950857B1 KR 101950857 B1 KR101950857 B1 KR 101950857B1 KR 1020177030537 A KR1020177030537 A KR 1020177030537A KR 20177030537 A KR20177030537 A KR 20177030537A KR 101950857 B1 KR101950857 B1 KR 101950857B1
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South Korea
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anode
assembly
cathode
magnet assembly
magnet
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KR1020177030537A
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Korean (ko)
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KR20170131556A (en
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안드레아스 로프
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어플라이드 머티어리얼스, 인코포레이티드
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3438—Electrodes other than cathode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3455—Movable magnets

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

Deposition sources (100, 300, 400, 500) for sputter deposition are provided. The deposition source includes a cathode 110 for providing a target material to be deposited, a movable magnet assembly 120, and a movable anode assembly 130 according to the magnet assembly 120.

Description

[0001] SPUTTER DEPOSITION SOURCE, SPUTTERING APPARATUS AND METHOD OF OPERATING THEREOF [0002]

[0001] Embodiments of the invention relate to deposition sources, sputtering apparatus, and methods of operation thereof for sputter deposition. Embodiments specifically include a sputter deposition source for magnetron sputtering utilizing a rotatable cathode, a sputtering apparatus for sputter deposition in a vacuum chamber, and a sputter deposition system using a rotatable cathode and a movable magnet assembly To a method of operating a sputter deposition source.

PVD processes, and in particular sputtering processes, have received increasing attention in several technical fields, such as display fabrication. With a variety of sputtering techniques, a good deposition rate with sufficient layer properties can be obtained. Sputtering, particularly magnetron sputtering, is a technique for coating substrates such as glass or plastic substrates with metal or non-metallic layers. Thus, a stream of coating material is produced by sputtering a target through the use of a plasma. As a result of collisions with the high-energy particles from the plasma, material is released from the target surface. Plasma parameters such as pressure, power, gas, magnetic field, etc. can be controlled. The material released from the target moves from the target toward one or more substrates to be coated and is attached to the substrates. A wide variety of materials including metals, semiconductors, and dielectric materials can be sputtered to the desired dimensions. Magnetron sputtering has been recognized in a variety of applications including display fabrication, semiconductor processing, optical coatings, food packaging, magnetic recording, and protective coatings.

[0003] Sputtering devices include a power supply for supplying electrical energy, a power transfer assembly for depositing the energy in the gas to ignite and hold the plasma, and a target for providing the coating material through sputtering by plasma At least one cathode. Typically, sputtering can be performed by magnetron sputtering, where magnet assemblies are utilized to confine the plasma and control the motion of the plasma ions to improve sputtering conditions. The plasma confinement can also be utilized to control the distribution of the material to be deposited on the substrate. In order to obtain the desired layer deposition on the substrate, plasma distribution, plasma properties, and other deposition parameters need to be controlled. A uniform layer with desired layer properties may be desirable, particularly for large area deposition (e.g., in producing displays on large area substrates).

[0004] It may be particularly difficult to achieve uniformity and process stability for static deposition processes where the substrate is not continuously moved through the deposition zone. Therefore, considering the growing demand for manufacturing optoelectronic devices and other devices on a large scale, process uniformity and stability need to be further improved.

[0005] In view of the above, according to the independent claims, there is provided a deposition source for sputter deposition, a device for sputter deposition in a vacuum chamber, and a method for operating a deposition source. Additional aspects, advantages, and features of the present invention are apparent from the dependent claims, the description, and the accompanying drawings.

[0006] According to embodiments described herein, a sputter deposition source for sputter deposition is provided. The deposition source includes at least one cathode for providing a target material to be deposited; A movable magnet assembly; And at least one anode assembly movable according to the magnet assembly. In embodiments, the anode assembly is moveable synchronously and / or with a predetermined spatial relationship to the magnet assembly.

[0007] According to a further aspect, there is provided a magnetron sputter apparatus for sputter deposition in a vacuum chamber. The apparatus includes a sputter deposition source for sputter deposition in a vacuum chamber; And a vacuum chamber. The sputter deposition source includes at least one cathode for providing a target material to be deposited, a movable magnet assembly, and at least one anode assembly movable according to the magnet assembly. In some embodiments, the cathode, the magnet assembly, and the anode assembly are positioned within the vacuum chamber. Additionally, the apparatus may include a magnet drive unit for moving the magnet assembly and / or an anode assembly drive unit for moving the anode assembly, which are positioned outside the vacuum chamber.

[0008] Embodiments also relate to methods for operating a deposition source for sputter deposition. The method includes moving the anode assembly according to the magnet assembly and in particular with respect to the cathode providing the target material to be sputtered or about the axis of the cathode. In particular, the distance between the anode assembly and the magnet assembly can remain constant during the movement.

[0009] Embodiments also relate to apparatuses for performing the disclosed methods, and include apparatus portions for performing individual method operations. This method may be performed by a hardware component, by a computer programmed by appropriate software, by any combination of the two, or in any other manner. In addition, embodiments in accordance with the present invention also relate to methods of operating the described apparatus.

[0010] Additional advantages, features, aspects, and details that may be combined with the embodiments described herein will be apparent from the dependent claims, the description, and the drawings.

[0011] In order that the above-recited features of the present invention may be understood in detail, a more particular description of the invention, briefly summarized above, may be rendered by reference to embodiments. The accompanying drawings relate to embodiments of the present invention and are described below.
[0012] FIG. 1 illustrates a schematic cross-sectional view of a deposition source for sputter deposition, in accordance with embodiments described herein.
[0013] FIG. 2 is a schematic diagram illustrating a generalized concept of a deposition source for sputter deposition, in accordance with embodiments described herein.
[0014] FIG. 3A illustrates a schematic cross-sectional view of a deposition source for sputter deposition in accordance with embodiments described herein, in a first operating position.
[0015] FIG. 3B shows a schematic cross-sectional view of the deposition source of FIG. 3A in the second operating position.
[0016] FIG. 4 is a comparative example illustrating some deposition sources for sputter deposition to illustrate a first plasma distribution.
[0017] FIG. 5 is a schematic cross-sectional view of deposition sources for sputter deposition according to embodiments described herein, illustrating a second plasma distribution.
[0018] FIG. 6 illustrates a schematic side view of a deposition source for sputter deposition, in accordance with embodiments described herein.
[0019] FIG. 7 illustrates a schematic cross-sectional view of a deposition source for sputter deposition, in accordance with embodiments described herein.
[0020] FIG. 8 shows a schematic cross-sectional view of a sputtering apparatus according to embodiments described herein.
[0021] FIG. 9 illustrates a flow diagram of a method of operating a deposition source for sputter deposition, in accordance with embodiments described herein.

[0022] Reference will now be made in detail to the various embodiments of the invention, examples of which are illustrated in the accompanying drawings. In the following description of the drawings, like reference numerals refer to like components. In general, only differences with respect to the individual embodiments are described. Each example is provided in the description of the invention and is not intended as a limitation of the invention. Additionally, features illustrated or described as part of one embodiment may be used in conjunction with other embodiments or with other embodiments to produce further additional embodiments. The description is intended to include such modifications and alterations.

[0023] In this disclosure, the "deposition source" can be understood as a deposition source for sputter deposition, including a cathode for providing a target material deposited on a substrate. The cathode may comprise a target made of a material to be deposited. For example, the target may be made of or comprise at least one material selected from the group consisting of aluminum, silicon, tantalum, molybdenum, niobium, titanium, indium, gallium, zinc, tin, silver and copper . In particular, the target material may be selected from the group consisting of indium, gallium and zinc. On the other hand, typically, the anode assembly is not provided with the target material to be deposited.

[0024] Sputtering can be achieved with a wide variety of devices having different electrical, magnetic, and mechanical configurations. Some configurations include a power supply coupled to the cathode through a power transfer assembly for energizing the cathode with current. As a result, an electric field may be provided to the gas locating between the cathode and the (oppositely charged) anode assembly such that the gas is ionized in the region between the cathode and the anode and the plasma is maintained in that region. Typically, the cathode may be adapted to be provided with a negative voltage, and the anode assembly may be adapted to receive a positive voltage.

[0025] The power supply may be adapted to provide DC (direct current) or AC (alternating current) to generate the plasma. AC electromagnetic fields applied to the gas regularly provide higher plasma rates than DC electromagnetic fields. In a radio frequency (RF) sputtering apparatus, the plasma is ignited and maintained by applying an RF electric field. Thus, non-conductive materials can also be sputtered.

[0026] As used herein, "magnetron sputtering" refers to sputtering performed using a magnet assembly or "magnetron", ie, a unit capable of generating a magnetic field. The magnet assembly may be provided as a magnet yoke. Typically, the magnet assembly comprises one or more permanent magnets. The permanent magnets may be disposed on the first side of the target of the cathode, and the anode assembly and the gas to be ionized are disposed on the other side of the target. Applying both electric and magnetic fields to the gas may lead to increased ionization rates due to electrons traveling along the helical path and may additionally help control the motion of the plasma ions.

[0027] According to typical implementations, magnetron sputtering can be performed by DC sputtering, MF sputtering, RF sputtering, or pulse sputtering. As described herein, some deposition processes can advantageously employ DC sputtering, particularly using negatively charged cathodes and positively charged anode assemblies. However, other sputtering methods can also be applied.

[0028] Deposition sources include, but are not limited to, static cathodes such as flat plate cathodes (eg, planar cathodes), or movable cathodes (eg, rotatable cathodes such as rotary cylindrical cathodes) . For example, the cathode may be a rotatable cathode having a rotatable cylindrical target.

[0029] FIG. 1 shows a cross-sectional view of a deposition source 100 for sputter deposition according to embodiments described herein in a schematic illustration. The deposition source (100) includes a cathode (110) for providing a target material to be deposited; A movable magnet assembly (120); And a movable anode assembly 130 according to the magnet assembly 120. In other words, the anode assembly 130 is configured to be movable in accordance with the movement of the magnet assembly 120. For example, the anode assembly may be configured to be moveable synchronously with the magnet assembly 120 and / or while maintaining a predetermined spatial relationship between the magnet assembly 120 and the anode assembly 130. A predetermined spatial relationship between the magnet assembly 120 and the anode assembly 130 may be maintained throughout the movement of the magnet assembly 120. [ However, the embodiments described herein also include maintaining a predetermined spatial relationship between the magnet assembly 120 and the anode assembly 130 at specific points of each movement trajectory, particularly at the points where sputtering is performed .

[0030] Typically, during sputtering, the plasma can be locatable in the plasma confinement region in front of the magnet assembly, and the position of the plasma confinement region depends on the positioning of the magnet assembly and in particular on the tilting angle. Moving the magnet assembly 120 can change the plasma resistance and affect the spatial plasma distribution due to the spatial variation of the electromagnetic field associated therewith. For example, a plasma cloud is shifted in space by pivoting or tilting the magnet assembly about a pivot axis. Shifting the plasma by moving the magnet assembly can lead to better layer thickness uniformity of the substrate to be coated, especially if the substrate is kept static during the coating process. In the embodiments described herein, both the magnet assembly 120 and the anode assembly 130 may be movable relative to the substrate to be coated, particularly if the substrate is static during the sputtering process.

[0031] When the magnet assembly is moved while the anode assembly is stationary, the plasma will follow the plasma confinement region of the magnet assembly and move away from the static anode, for example, toward a different anode. This effect may result in plasma density variations, poor target utilization, and reduced layer thickness uniformity. In contrast, according to the embodiments described herein, the anode assembly is configured such that the desired spatial relationship between the magnet assembly and the anode assembly is maintained during movement, or at least also at certain movement positions (where sputtering is performed) And is configured to be movable according to the assembly. Thus, according to the embodiments described herein, the anode can be moved to have a substantially constant distance to the plasma region.

In the embodiment shown in FIG. 1, as indicated by arrows 121, the anode assembly 130 maintains an essentially constant distance D between the magnet assembly 120 and the anode assembly 130 For example, synchronously with the magnet assembly 120. As used herein, "essentially" means that the distance D between the magnet assembly 120 and the anode assembly 130 varies less than +/- 30%, especially less than +/- 10%, more particularly less than +/- 5% It can mean something. In particular, the distance D between the magnet assembly and the anode assembly remains constant during sputtering. In other words, the ratio between the minimum distance between the magnet assembly and the anode assembly during travel and the maximum distance between the magnet assembly and the anode assembly during travel is greater than 0.7, in particular greater than 0.95, more particularly, 1.

[0033] In the embodiments described herein, the magnet assembly is movable along a first trajectory, and the anode assembly is movable along a second trajectory, wherein the first trajectory comprises a first pair of turning points, points, and the second locus has a second pair of turning points. The ratio between the minimum distance between the first turning points of the first pair and the corresponding turning points of the second pair of turning points and the maximum distance between the corresponding turning points of the first pair of turning points and the second pair of turning points May be greater than 0.7, in particular greater than 0.95, and more particularly 1.

[0034] In other words, as long as the distance between the magnet assembly and the anode assembly remains essentially constant at certain points (where sputtering occurs) of each of the trajectories, simultaneous or simultaneous movement of the magnet assembly and the anode assembly is provided It may not be practical. For example, such specific points may be turning points of respective trajectories, and sputtering is performed at the turning points. As an example, initially, the anode assembly may be moved along a second trajectory, after which the magnet assembly is moved along a first trajectory following the movement of the anode assembly until the previous distance between the magnet assembly and the anode assembly is restored Lt; / RTI > Thereafter, sputtering can be continued ("split sputtering mode"). As used herein, "joint" movement may also include such continuous movement of the magnet assembly and the anode assembly.

Also, the distance between the cathode 110 and the anode assembly 130 can be kept constant during the joint movement of the magnet assembly and the anode assembly. Thus, the plasma rate and / or spatial and temporal plasma distribution during the movement of the anode assembly 130 may be maintained more stable due to certain distances between the anode assembly 130, the magnet assembly 120, and the cathode 110 At the same time, the plasma can be shifted in space, resulting in a more uniform coating layer thickness effect.

[0036] According to some embodiments that may be combined with other embodiments described herein, the magnet assembly 120 is moved along a first trajectory, and the anode assembly is coupled to the plasma confinement region of the magnet assembly 120 And the anode assembly 130 are movable along the second trajectory so that they do not vary by more than +/- 30%, in particular by more than +/- 5%, during the movement, It remains constant. In other words, when moving the magnet assembly, the anode assembly is configured to follow movement of the plasma confinement region of the magnet assembly.

[0037] In the embodiments described herein, the anode assembly 130 and the magnet assembly 120 are movable relative to the cathode 110, particularly with respect to the axis of the cathode 110. For example, the anode assembly 130 and the magnet assembly 120 may be movable relative to the axis of rotation of the cathode 110. For example, the cathode may be static, and both the anode assembly 130 and the magnet assembly 120 are movable relative to the cathode 110. [ In some embodiments described herein, the cathode 110 may be movable and the cathode movement is independent of movement of the anode assembly 130 and the magnet assembly 120. Although the rotatable cathode according to the embodiments described herein may include rotation of the target about an axis of rotation (where the target is rotated several times in a clockwise or counterclockwise direction), the cathode position And may be static with respect to the vacuum chamber of the deposition apparatus. That is, the position of the sputtering material from the target by the plasma is essentially constant, so that the cathode can be considered to be essentially static, while the plasma is adjacent to another part of the target while the target rotates under the plasma .

[0038] The sputter deposition source 100 may include a rotatable cathode 110 having a target of metal and / or non-metallic material to be deposited on a substrate to be coated and released from the target by sputtering. In this disclosure, "rotatable cathode" can be understood as an at least partially cylindrical cathode having a rotational axis. In particular, the "rotatable cathode" can be understood as a cathode that rotates about an axis of rotation during sputtering. For example, a "rotatable cathode" can be driven by a drive during sputter deposition of a target material on a substrate. In this disclosure, "rotatable cathode" includes a longitudinal axis extending from a first end of a rotatable cathode to a second end of a rotatable cathode, e.g., a longitudinal axis of rotation (Which may be possible). The portion of the rotatable cathode comprising the target material to be deposited may extend from the first end of the rotatable cathode to the second end of the rotatable cathode.

When compared to planar cathodes, the rotatable cathodes are used to ensure that the target material is reliably exploited around the entire circumference of the target during sputtering and that the sputtering of the target (which may cause less sputtering on the target surface) It can provide the advantage that no edge portions are present. Thus, by utilizing rotatable cathodes, the material costs can be reduced and the target can be used for a longer period of time before the target exchange is needed.

[0040] In the case of the rotatable cathodes 110, the magnet assembly 120 may be provided in the backing tube of the cathode with the target material covering the outer surface of the backing tube. In implementations, the magnet assembly may be disposed within the target material tube of the cathode. The rotatable cathode 110 may be provided at least partially as a hollow cylinder to provide an interior space for receiving the magnet assembly 120.

[0041] According to some embodiments, the magnet assembly 120 and the anode assembly 130 are pivotable about pivot axes, such as a common pivot axis A, The magnet assembly 120 may be movable along a first trajectory along an arc about a common pivot axis A in a first radius and the anode assembly 130 may be movable along a first trajectory about a common pivot axis A And can be moved along a second locus along the arc. The second radius may be greater than the first radius. The magnet assembly may be disposed closer to the common pivot axis A than the anode assembly. At least one of the first trajectory and the second trajectory may have the form of an arc, e.g., a circular arc. The synchronous pivotal movement of the magnet assembly 120 and the anode assembly 130 is controlled by a first angular velocity of the magnet assembly 120 that circulates the pivot axis A (the second angular velocity of the anode assembly 130 circulating the pivot axis A) Lt; / RTI > (which essentially corresponds to < RTI ID = 0.0 > The corresponding angular speeds may lead to a constant distance D between the magnet assembly 120 and the anode assembly 130 during pivotal movement. The joint movement of the magnet assembly 120 and the anode assembly 130 may occur simultaneously or sequentially.

The first trajectory of the magnet assembly 120 may have the form of a circular arc within the cathode 110 and / or the second trajectory of the anode assembly 130 may have the shape of a circular arc outside the cathode have. In some embodiments, the pivot axis A may intersect the magnet assembly 120.

[0043] The cylindrical cathode wall may be disposed between the magnet assembly 120 and the anode assembly 130 at a third radius, the third radius being greater than the first radius and less than the second radius. Thus, the first trajectory, the second trajectory, and the cathode wall may essentially form a coaxial arrangement. Thus, the distance between the anode assembly 130 moving along the second trajectory and the wall of the cathode 110 can be kept constant during the movement of the anode assembly. In some embodiments, the cathode is rotatable about a pivot axis A, but the rotation may be independent of the pivotal movement of the magnet assembly and the anode assembly about the cathode center.

[0044] In some implementations, the rotatable cathode 110 may be configured to rotate at a rate of 1 to 50 revolutions per minute, 5 to 30 revolutions per minute, or 15 to 25 revolutions per minute, And may be configured to rotate at a rotational speed. The rotation may include at least one or more complete 360 ° rotations. Typically, the rotatable cathode 110 may be configured to rotate at a rate of about 20 revolutions per minute.

[0045] On the other hand, the magnet assembly 120 may be arranged to move on the arc-shaped first locus only between the first turning point and the second turning point. In other words, the magnet assembly may not be configured to fully circulate the pivot axis A, but may be configured to oscillate about a central sputtering position, wherein the plasma confining region of the magnet assembly is oriented toward the substrate to be coated do. Likewise, the anode assembly may not be configured to fully circulate the pivot axis A, but may be configured to vibrate between two turning points in synchronism with the magnet assembly. In particular, the magnet assembly and the anode assembly can simultaneously reach their respective turning points and change direction.

[0046] According to some embodiments that may be combined with other embodiments disclosed herein, the anode assembly 130 includes at least one anode rod 132, and at least one anode rod and cathode (110) are positioned essentially parallel and next to each other. The shape of the anode rod may be cylindrical. However, while other shapes are possible, it is advantageous to avoid sharp edges to prevent electric field concentrations or arcing. Typically, the minimum radius of curvature of the rod should be 2 mm or more.

The outer dimension of the anode rod 132 may be smaller than the outer diameter of the cylindrical cathode. For example, the outer diameter of the anode rod may be less than 50% or less than 25% of the outer diameter of the cathode 110. The distance between the outer surface of the anode rod and the outer surface of the cathode wall may be less than the outer dimension of the anode rod.

[0048] The anode assembly 130 may be provided with a heat sink for cooling purposes. In some implementations, at least one anode rod 132 is provided with a cooling element. For example, at least one anode rod 132 may be provided with a cooling channel which extends axially through the anode rod 132 and is fluid cooled (e.g., water cooled) Lt; / RTI > Further, a heat sink (for example, a water cooling portion) may be provided in the cathode.

The anode assembly 130 includes a soft magnetic material such as iron, mild steel, or a nickel-iron alloy to guide magnetic field lines provided by the magnet assembly 120 And may be made of a soft magnetic material.

[0050] According to an aspect of the present disclosure, a method of operating a deposition source 100 is provided. The anode assembly 130 is moved with respect to the magnet assembly 120, particularly with respect to the cathode 110 or the cathode 110 providing sputtering and especially the target material to be deposited. As indicated by arrows 121 in FIG. 1, the anode assembly can be moved synchronously with the magnet assembly and / or while maintaining essentially constant distance D between the anode assembly and the magnet assembly during sputtering. The movement of the magnet assembly and the movement of the anode assembly may include pivoting about a common pivot axis A at the first and second radii, respectively, but the angular velocity of the magnet assembly may correspond to the angular velocity of the anode assembly. At the same time, the cathode can rotate about its own axis, which can correspond to the pivot axis A, independently of the pivot movement and at an angular velocity different from the angular velocity of the anode assembly. The method may further include any or all of the above-mentioned activities or features described above with reference to deposition source 100 in any combination, and such activities or features are not repeated herein.

[0051] FIG. 2 is intended to illustrate the general concept of the embodiments disclosed herein and schematically illustrates a deposition source for sputter deposition. The deposition source according to FIG. 2 includes a cathode 110, a magnet assembly 120 that is movable and disposed on the first side of the cathode 110, and a second electrode 120 that is movable and disposed on the second side of the cathode 110 And an anode assembly 130. The anode assembly 130 is movable along the magnet assembly 120.

As indicated by the arrows 121, the anode assembly 130 can be moved synchronously with the magnet assembly 120 and / or while maintaining an essentially constant distance D relative to the magnet assembly 120 . As used herein, "essentially" means that the distance D at least at the positions where sputtering is performed does not change by more than +/- 30%, especially +/- 5%, more particularly more than +/- 1% can do. At the same time, a certain distance between the cathode 110 and the anode assembly 130 can be maintained. Although the magnet assembly 120 may be movable relative to the cathode 110, the cathode 110 may also be movable or static.

[0053] As shown in FIG. 2, the cathode 110 may also be provided as a static planar cathode where a target material to be deposited may be provided on at least a first side of the cathode (facing the anode assembly 130) have. In further embodiments, the cathode 110 may also be provided as a moveable planar cathode, such as a rotatable planar cathode or a linearly displaceable planar cathode.

In the case of planar cathodes, the magnet assembly 120 may be provided on the side of the cathode's planar backing plate (opposite the target of the material to be deposited). The anode assembly 130 may be provided on the target side of the cathode such that plasma ions to be generated between the anode assembly 130 and the cathode 110 may be used to sputter the target.

[0055] FIG. 3a shows a cross-sectional view of a deposition source 300 for sputter deposition according to embodiments described herein with a schematic illustration, wherein the deposition source is disposed in a first operating position. Figure 3B shows the same deposition source in the second operating position. The deposition source (300) comprises: a rotatable cathode (110) for providing a target material to be deposited; A movable magnet assembly (120); And a movable anode assembly 130 according to the magnet assembly 120. The anode assembly 130 is configured to be moveable synchronously with the magnet assembly 120 and / or movable while maintaining a predetermined spatial relationship between the magnet assembly 120 and the anode assembly 130.

[0056] In the embodiment shown in FIG. 3A, the anode assembly 130 includes more than one anode. For example, the anode assembly 130 may include a first anode 332 and a second anode 334. Both the first anode 332 and the second anode 334 may be provided as an anode rod, e.g., a circular anode rod. However, the first anode and the second anode may have different shapes, and need not have the same shape.

The first anode 332 and the second anode 334 are arranged such that both the anodes can be powered by the same power connector and are on the same electric potential, They can be electrically connected to each other. In some embodiments, the first anode and the second anode are electrically isolated from each other.

[0058] Similar to the embodiments shown in FIG. 1, the magnet assembly may be movable along a first trajectory having a first radius, the first radius being smaller than the third radius of the cylindrical cathode. In addition, both the first anode 332 and the second anode 334 may be disposed on a second locus that is at least partially continuous about the rotatable cathode 110. The second trajectory may have a circular arc shape with a second radius such that the distance between the first anode 332 and the cathode 110 corresponds to the distance between the second anode 334 and the cathode 110, The first anode 332, and the second anode 334 are moved along the second locus.

[0059] The angle between the first anode 332 and the second anode 334 with respect to the center of the cathode 110 may be more than 30 ° and less than 200 °, especially more than 90 ° and less than 150 °. The angle between the first anode 332 and the second anode 334 may be adjustable. In the embodiments disclosed herein, the magnet assembly 120 is essentially located at a central angular position between the first anode 332 and the second anode 334. Such a symmetrical arrangement of the first anode 332 and the second anode 334 to the magnet assembly 120 leads to a more homogeneous plasma distribution and a more uniform thickness of the layer to be deposited on the substrate 20. [

3A, the magnet assembly 120 is located in a central sputtering position on the first locus, where the plasma confining region of the magnet assembly 120 is located on the substrate 20 to be coated, / RTI > The first anode 332 and the second anode 334 are disposed on a second trajectory at two positions equidistant from the substrate 20.

The first anode 332 and the second anode 334 can be pivoted to the second operating position shown in FIG. 3B along the magnet assembly 120 about the pivot axis A. During movement, a first distance D1 between the first anode 332 and the magnet assembly 120 (particularly a minimum distance between the first anode and the magnet assembly) and a second distance D1 between the second anode 334 and the magnet assembly 120 The distance D2 (in particular, the minimum distance between the second anode and the magnet assembly) can be kept essentially constant. The first distance and the second distance may be the same. Pivotal movements of the first anode 332, the second anode 334, and the magnet assembly 120 may be performed simultaneously and at corresponding angular speeds. In other embodiments, only the first anode 332 and the second anode 334 are moved simultaneously while the magnet assembly is moved before or after.

[0062] The second operating position shown in FIG. 3B may be the maximum oblique position of the magnet assembly 120. In other words, the magnet assembly 120, the first anode 332, and the second anode 334 are disposed at turning points on the first and second trajectories, respectively, from which the magnet assembly and the anode Return to the first operating position shown in Fig. 3A in the process of addition of sputtering. Thereafter, the pivot movement may continue in the third operating position in a counterclockwise direction, and the third operating position is a mirror image of the second operating position. Such "oscillatory movement" may continue in an additional process of sputtering to obtain the desired layer properties on the substrate. However, in some embodiments, the maximum tilt angle may be different, or alternatively both magnet assembly 120 and anode assembly 130 may be fully circulated in pivot axis A. [

In embodiments that may be combined with other embodiments described herein, the plasma may be applied to the magnet assembly 120 and the fourth operation of the anode assembly 130 such that the substrate 20 is not exposed to the plasma Can be ignited in position. The magnet assembly 120 and the anode assembly 130 may then be moved to a fifth operating position along with each other while maintaining the plasma, wherein the fifth operating position results in the deposition of material on the substrate. The fifth operating position may correspond to one of the first to third operating positions. In the fourth operating position, the plasma confinement region of the magnet assembly 120 may be directed to a shield capable of collecting the material to be sputtered. Therefore, at first, the substrate 20 is not exposed to the plasma. This non-exposure condition can be maintained until the plasma is stabilized. The magnet assembly 120 may then be pivoted or tilted with the anode assembly 130 toward the substrate 20 while the stabilized plasma is maintained.

During pivotal movement of the magnet assembly 120 and the anode assembly 130, the cathode may rotate at a given angular rate about its own axis, which may correspond to the pivot axis A. The rotational movement of the cathode 110 and the oblique movement of the magnet assembly 120 may be independent of each other.

[0065] FIG. 4 is a comparative example illustrating some deposition sources for sputter deposition to illustrate a first plasma distribution.

[0066] The deposition sources each include a cathode 810, which is a cylindrical-shaped rotatable cathode, and a magnet assembly 820 disposed within the cathode 810, which are disposed next to each other with a linear arrangement. Magnet assemblies 820 are pivotable about the rotational axis of the associated cathode. The static load-shaped anodes are each disposed between the cathodes 810.

In the arrangement shown in FIG. 4, the magnet assembly 820 has been moved to a position having a large distance to the first static anode 831 and a small distance to the second static anode 830. The first plasma cloud 850 follows the movement of the magnet assembly 820 and moves in a direction away from the first static anode 831 along the plasma confinement region of the magnet assembly. Similarly, the second plasma cloud 851 moves toward the second static anode 830 along the plasma confinement region of the magnet assembly. This effect may result in plasma density variations. For example, if the second static anode 830 is located closer to the magnet assembly 820 than the first static anode 831, or vice versa, the first plasma anchor 831, which is assigned to the first static anode 831, The shape and density of the second plasma anchor 850 may be different from the shape and density of the second plasma cloud 851 assigned to the second static anode 830.

[0068] FIG. 5 is a schematic cross-sectional view illustrating some deposition sources 300 for sputter deposition according to embodiments described herein for illustrating a second plasma distribution.

Similar to the arrangement of FIG. 4, deposition sources 300 each include a magnet assembly 120 disposed next to each other in a linear arrangement and disposed within a cylindrical-shaped rotatable cathode and cathode. Magnet assemblies 120 are pivotable about the rotational axis of the associated cathode. Two movable rod-shaped anodes forming the anode assembly 130 are each assigned to each of the cathodes. The layout of the deposition sources 300 shown in FIG. 5 may correspond to the layout of the deposition sources shown in FIGS. 3A and 3B. Thus, the description given above also applies to the embodiment of FIG.

[0070] In the arrangement shown in FIG. 5, the magnet assemblies 120 were moved clockwise according to the two assigned anodes, while maintaining a constant distance between each of the two assigned anodes and the magnet assembly. The first plasma cloud 350 and the second plasma cloud 351 follow the joint movement of the magnet assembly 120 and the anode assembly 130 along the plasma confinement region of the magnet assembly. The shapes and the densities of the first plasma cloud 850 and the second plasma cloud 851 remain stable during migration and the first plasma cloud 850 and the second plasma cloud 851 have essentially the same shape and density Lt; / RTI > Thus, the uniformity of the layers to be coated on the substrate can be optimized.

[0071] FIG. 6 shows a schematic side view of a deposition source 400 for sputter deposition according to embodiments described herein. This embodiment is similar to the embodiment described above with reference to Figures 3a and 3b. Therefore, the description given above can also be applied to the embodiment of Fig.

[0072] The deposition source 400 includes several rotatable cathodes 110, each rotatable cathode having a first axial end 412 and a second axial end 414 opposite the first axial end, Lt; / RTI > In some implementations, the cathode 110 is connected to the cathode support via a rotating shaft, and the cathode support has a rotary drive for rotating the cathode. The rotary drive may include an actuator, a drive belt, a drivetrain, or a motor configured to rotate the rotatable cathode about an axis of rotation. The magnet assembly 120 is disposed at each cathode.

[0073] According to some embodiments that may be combined with other embodiments described herein, the deposition source 400 may include magnet assembly drive units (not shown) for moving the magnet assemblies 120 along the first trajectories An anode assembly drive unit 422, and anode assembly drive units 432 for moving the anode assemblies 130 along the second trajectories. Similar to the rotary drives for cathodes, the magnet assembly drive units and / or anode assembly drive units may be mounted to separate magnet assemblies and / or individual anode assemblies while maintaining a predetermined spatial relationship between anode assemblies and magnet assemblies An actuator, a drive belt, a drive train, or a motor configured to move about a pivot axis along their respective trajectories.

[0074] In some embodiments, the anode assembly drive unit is disposed at a first axial end of the cathode, and the cathode drive unit for rotating the cathode is disposed at a second axial end opposite the first end of the cathode. The magnet assembly drive unit may be disposed at the second axial end of the cathode together with the cathode drive unit. For example, the magnet assembly drive unit and the cathode drive unit are integrated into a common drive unit. Alternatively, the magnet assembly drive unit and the anode assembly drive unit may be disposed at the same axial end of the rotatable cathode. For example, the magnet assembly drive unit and the anode assembly drive unit are integrated into the cathode drive unit.

6, an anode assembly drive unit 432 is disposed at the first axial end 412 of the cathode, and a magnet assembly drive unit 422 is disposed at the first axial end 412 of the cathode. [0075] In some embodiments, And is disposed at the second axial end 414. This arrangement can lead to a less complex drive unit configuration. The anode assembly drive unit 432 may be adapted to move both the first anode 332 and the second anode 334 of the anode assembly 130 simultaneously. For example, both the first anode 332 and the second anode 334 may be connected to the drive shaft of the anode assembly drive unit 432.

The deposition source 400 can be used as a part of a sputtering apparatus, ie, a sputtering apparatus including a vacuum chamber 401 for performing sputtering in a vacuum chamber 401. The wall portion 402 of the vacuum chamber 401 is schematically shown in Fig. The cathodes, the movable magnet assemblies as well as the movable anode assemblies can be placed in the vacuum chamber while the magnet assembly drive units and the anode assembly drive units can be positioned outside the vacuum chamber.

[0077] FIG. 7 shows a schematic cross-sectional view of a deposition source 500 for sputter deposition according to embodiments described herein. The deposition source 500 is similar to the embodiment described above with reference to Figures 3A and 3B. Thus, the description given above can also be applied to the embodiment of FIG.

The first anode 332 and the second anode 334 may be connected by a housing 550. The housing may be made of a conductive material so that both the anodes can be electrically powered using a single power connector.

[0079] The housing 550 may cover the outer circumferential section of the cathode 110 to shield the cathode from the stray coating. For example, the housing 550 may cover the back side of the cylindrical cathode away from the substrate to be coated, while the front surface of the cathode 110 facing the substrate may be open to be sputtered. In particular, the section of the second circular trace between the first anode and the second anode may be open, while the remaining circumferential section of the cathode may be covered by the housing forming the cathode shielding. The housing 550 can be fixed to the first anode 332 and the second anode 334 so that the housing rotates together with the anode assembly 130 about the pivot axis.

[0080] Additionally, the first anode 332 and the second anode 334 may be provided with a water-cooling portion 336 including a cooling channel that runs axially through the anode rods.

[0081] FIG. 8 shows a schematic view of a sputtering apparatus 600 according to embodiments described herein. Sputtering apparatus 600 includes a vacuum chamber 610 and a deposition source according to any of the embodiments described herein. In the illustrated embodiment, the deposition source comprises four rotatable cathodes 110, each cathode 110 having an anode assembly 332 and a second anode 334, including a first anode 332 and a second anode 334, And the cathodes 110 and the anode assemblies 130 are disposed inside the vacuum chamber 610. The first anode 332 and the second anode 334 are connected by a housing 550 for shielding the rear side of the cathode from the stray coating. More than four rotatable cathodes 110 may be provided.

[0082] A power device 625 for power supply is disposed outside the vacuum chamber 610 and is electrically connected to the cathodes and anode assemblies through respective electrical connections and power connectors. Figure 8 shows rotatable cathodes 110 with magnet assemblies 120 or magnetrons being provided in rotatable cathodes 110 wherein the magnet assemblies are each provided with a target material Backing tubes.

[0083] As shown in FIG. 8, additional vacuum chambers 611 may be provided adjacent to the vacuum chamber 610. The vacuum chamber 610 can be separated from adjacent vacuum chambers 611 by valves having a valve housing 604 and a valve unit 605, respectively. Thus, after the carrier 606 with the substrate 607 to be coated is inserted into the vacuum chamber 610 as indicated by arrow 601, the valve units 605 can be closed. Thus, the atmosphere in the vacuum chamber 610 can be controlled by generating a technical vacuum through, for example, vacuum pumps connected to the vacuum chamber 610 and vacuum chambers 611 and / or by depositing process gases in the vacuum chamber 610 Lt; RTI ID = 0.0 > region. ≪ / RTI >

[0084] According to typical embodiments, the process gases may include inert gases such as argon, and / or reactive gases such as oxygen, nitrogen, hydrogen and ammonia, ozone, activated gases, and the like.

In the vacuum chamber 610, rollers 608 are provided to transport the carrier 606 with the substrate 607 into and out of the vacuum chamber 610. The term "substrate" is used herein to refer to a substrate or substrate, such as inflexible substrates (e.g., slices of transparent crystal such as glass substrate, wafer, sapphire, etc.) and flexible substrates Foil "). ≪ / RTI >

[0086] Additional details of the deposition source may be taken from one of the embodiments described above or any of the embodiments described above, and such embodiments are not repeated here.

[0087] FIG. 9 illustrates a flow diagram of a method of operating a deposition source for sputter deposition, in accordance with embodiments described herein. The method includes moving, in a first box 902, the anode assembly with respect to the magnet assembly and particularly with respect to the cathode providing the target material to be sputtered. The method may include moving the anode assembly along the magnet assembly relative to the axis of the cathode (e.g., the rotational axis of the cathode). The distance between the anode assembly and the magnet assembly can be maintained essentially constant, at least in each sputtering position or throughout the movement. In some embodiments, the magnet assembly and the anode assembly pivot about a common pivot axis that may correspond to the rotational axis of the cylindrical cathode.

While the foregoing is directed to embodiments of the present invention, other and further embodiments of the invention may be devised without departing from the basic scope thereof, and the scope of the present invention is defined in the following claims Lt; / RTI >

Claims (16)

As a deposition source for sputter deposition,
At least one cathode (110) for providing a target material to be deposited;
A movable magnet assembly (120); And
And at least one anode assembly (130)
The at least one anode assembly 130 is movable along the magnet assembly 120 and the magnet assembly 120 and the anode assembly 130 are positioned about pivot shafts or on a common pivot axis A ), A deposition source for sputter deposition. The method according to claim 1,
Wherein the magnet assembly (120) and the anode assembly (130) are movable relative to the cathode (110). The method according to claim 1,
Wherein a ratio between a minimum distance between the magnet assembly 120 and the anode assembly 130 during movement and a maximum distance between the magnet assembly 120 and the anode assembly 130 during the movement is greater than 0.7, Wherein the magnet assembly is movable along a first trajectory and the anode assembly is movable along a second trajectory. The method according to claim 1,
Wherein the magnet assembly is movable along a first trajectory and the anode assembly is movable along a second trajectory,
Wherein the first trajectory has a shape of a circular arc within the cathode (110) and / or the second trajectory has a shape of a circular arc outside the cathode (110). 5. The method according to any one of claims 1 to 4,
The cathode (110) is at least partially provided as a hollow cylinder, and the magnet assembly (120) is disposed in the hollow cylinder. delete The method according to claim 1,
Wherein the cathode (110) is rotatable independently of the pivotal movement of the magnet assembly (120) and the anode assembly (130). 5. The method according to any one of claims 1 to 4,
A magnet assembly drive unit 422 for moving the magnet assembly 120 and / or an anode assembly drive unit 432 for moving the anode assembly 130, . 9. The method of claim 8,
The cathode 110 has a first axial end 412 and a second axial end 414 opposite the first axial end,
Wherein the anode assembly drive unit 432 is disposed at the first shaft end 412 and the magnet assembly drive unit 422 is disposed at the second shaft end 414. 9. The method of claim 8,
The anode assembly 130 includes a first anode 332 and a second anode 334,
The anode assembly drive unit 432 may include a first distance D1 between the first anode 332 and the magnet assembly 120 and a second distance D1 between the second anode 334 and the magnet assembly 120. [ Is configured to move the first anode and the second anode such that at least one of the first and second electrodes (D2) remains essentially constant during movement. 11. The method of claim 10,
The angle between the first anode 332 and the second anode 334 with respect to the center of the cathode 110 is greater than 30 degrees and less than 200 degrees,
Wherein the magnet assembly (120) is essentially located at a central angular position between the first anode (332) and the second anode (334). 5. The method according to any one of claims 1 to 4,
The anode assembly 130 includes a first anode 332 and a second anode 334,
Wherein the first anode (332) and the second anode (334) are connected by a housing (550). 13. The method of claim 12,
The housing (550) covers the outer circumferential section of the cathode to shield the cathode (110) from a stray coating. As the sputtering apparatus 600,
A vacuum chamber 610; And
A deposition source for sputter deposition,
Wherein the deposition source comprises:
At least one cathode (110) for providing a target material to be deposited,
A movable magnet assembly 120, and
At least one anode assembly (130)
Lt; / RTI >
Wherein the at least one anode assembly 130 is movable along the magnet assembly 120 and the magnet assembly 120 and the anode assembly 130 are positioned about the pivot axes or about the center of the common pivot axis A Lt; / RTI >
The at least one cathode 110, the magnet assembly 120, and the at least one anode assembly 130 are positioned within the vacuum chamber 610, and a magnet assembly drive unit (not shown) for moving the magnet assembly 422) and / or an anode assembly drive unit (432) for moving the anode assembly are positioned outside the vacuum chamber (610). CLAIMS 1. A method of operating a deposition source for sputter deposition,
The anode assembly 130 is moved with respect to the cathode assembly 120 and with respect to the cathode 110 providing the target material to be deposited and the magnet assembly 120 and the anode assembly 130 are moved about the pivot axes A method for operating a deposition source for sputter deposition, wherein the deposition source is pivotable about a common pivot axis (A). delete
KR1020177030537A 2015-06-05 2015-06-05 Sputter deposition source, sputtering apparatus and method of operating thereof KR101950857B1 (en)

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