CN104947048A - Coating device - Google Patents
Coating device Download PDFInfo
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- CN104947048A CN104947048A CN201510245444.6A CN201510245444A CN104947048A CN 104947048 A CN104947048 A CN 104947048A CN 201510245444 A CN201510245444 A CN 201510245444A CN 104947048 A CN104947048 A CN 104947048A
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- coating apparatus
- film
- electrode
- microscope carrier
- film coating
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Abstract
The invention provides a coating device. The coating device comprises a coating chamber, a bearing platform, a plurality of electrodes and a plurality of control units, wherein the bearing platform is configured in the coating chamber and is used for accommodating a base material; the plurality of electrodes are configured on the bearing platform; the plurality of control units are respectively connected with the plurality of electrodes electrically and are used for respectively applying a bias voltage to the plurality of electrodes to attract charged ions used for coating in the coating chamber so as to improve the coating uniformity of the base material.
Description
Technical field
The invention relates to a kind of film coating apparatus.
Background technology
In manufacture of semiconductor, deposition or film-plating process complete by physical vapor deposition (Physical Vapor Deposition, PVD) or chemical vapour deposition (chemical vapor deposition, CVD).Wherein, physical vapor deposition adopts physical method, material source is gasificated into gaseous atom, molecule or is ionized into ion, and by low-pressure gas, and the technology of the film of material identical with material source is formed at substrate surface.Chemical vapour deposition is then method process gas being utilized chemical reaction, by the deposition of material for being formed on base material.
Present stage, in order to promote the efficiency of PVD processing procedure or CVD processing procedure further, the formation of plasma asistance film can be utilized.Such as in PVD processing procedure, by plasma can make for deposition atom or molecule charged, and further with the direct of travel of electric field or the charged atom of Magnetic control or molecule, such as, to guarantee that atom or molecule can arrive the position of some more difficult depositions traditionally, the groove on base material.Again such as in CVD, utilize plasma can strengthen the activity of process gas, the chemical reaction in CVD can be carried out at a lower temperature and speed the speed of deposition of material.But, along with the evolution of manufacture of semiconductor technology, such as, when wafer one road expands to the even larger size of 18 inch from 12 inch, even if add the formation of plasma asistance film in PVD processing procedure or CVD processing procedure, be also difficult to the consistence of the thickness maintaining deposit film on so large wafer.
Summary of the invention
An aspect of of the present present invention is a kind of film coating apparatus, and this film coating apparatus carries out plated film by plasma on a base material.
According to an embodiment of the present invention, film coating apparatus comprises plated film chamber, microscope carrier, multiple electrode and multiple control unit.Microscope carrier is configured in plated film chamber, and microscope carrier is in order to hold base material.Multiple electrode is configured at microscope carrier.Multiple control unit is electrically connected multiple electrode respectively, and wherein multiple control unit is biased in multiple electrode in order to apply one respectively, to attract the charged ion for plated film in plated film chamber.
According to an embodiment of the present invention, above-mentioned bias voltage comprises direct supply.
According to an embodiment of the present invention, above-mentioned bias voltage comprises the small-signal AC power of tool direct current (DC) bias.
According to an embodiment of the present invention, each electrode above-mentioned is circular, annular and fan-shaped.
According to an embodiment of the present invention, above-mentioned multiple electrode array circularizes pattern, and this circular pattern is in the face of base material.
According to an embodiment of the present invention, above-mentioned multiple electrode array becomes scallop, and this scallop is in the face of base material.
According to an embodiment of the present invention, wherein see it by the direction of vertical microscope carrier, multiple electrode is distributed in microscope carrier uniformly.
According to an embodiment of the present invention, above-mentioned film coating apparatus also comprises target setting table.Target setting table is configured in plated film chamber and in the face of microscope carrier, target setting table is in order to hold target.
According to an embodiment of the present invention, above-mentioned film coating apparatus also comprises multiple magnet, is configured in plated film chamber, and described magnet is positioned at the side of target setting table away from microscope carrier.
According to an embodiment of the present invention, above-mentioned film coating apparatus also comprises shower nozzle.The gas inlet place of showerhead configurations in plated film chamber, and shower nozzle has multiple spout.Spout is in the face of microscope carrier, and the process gas that wherein gas inlet place provides moves towards microscope carrier via spout.
In sum, one or more embodiment of the present invention independently controls the current potential of each electrode by control unit, and in the process that plated film is formed, charged ion can move, so as to improving the uniformity coefficient of base material by the magnetism of electrode affects.In addition, in some embodiments, by the pattern of multiple different electrode, can be used to improve the uneven situation of various plated film.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the film coating apparatus of an embodiment of the present invention;
Fig. 2 is the circuit block diagram of multiple electrodes of Fig. 1;
Fig. 3 be can the pattern of application drawing 4 and Fig. 5 to improve the embodiment of the plated film uniformity coefficient on base material;
Fig. 4 and Fig. 5 is respectively the pattern schematic diagram of multiple electrodes of the different embodiment of the present invention;
Fig. 6 be can the pattern of application drawing 7 and Fig. 8 to improve the embodiment of the uniformity coefficient of the plated film on base material;
Fig. 7 and Fig. 8 is respectively the pattern schematic diagram of multiple electrodes of the different embodiment of the present invention;
Fig. 9 and Figure 10 is respectively the pattern schematic diagram of multiple electrodes of the different embodiment of the present invention;
Figure 11 is the film coating apparatus of another embodiment of the present invention.
Embodiment
Below will disclose multiple embodiment of the present invention with accompanying drawing, for clearly stating, the details in many practices will be explained in the following description.But should be appreciated that, the details in these practices is not applied to limit the present invention.In addition, accompanying drawing only for the purpose of description, is not mapped according to life size.For making to be convenient to understand, in following explanation, similar elements illustrates with identical symbology.
Should mean substantially within 20 percent of set-point or scope about word used herein " in fact (substantially) ", " approximately (around) ", " about (about) " or " being close to (approximately) ", being preferably within 10, is then more preferably within 5 percent.Wen Zhongruo is without clearly stating, and the numerical value mentioned by it all regards as approximation, namely as " in fact ", " approximately ", " about " or the error represented by " being close to " or scope.
In one or more embodiment of the present invention, film coating apparatus carries out plated film by plasma at a base material, wherein " plated film " refers at deposited on substrates one layer or more film, and the mode of deposit film is not limited to physical method (as physical vapor deposition) or chemical process (as chemical vapour deposition).
Fig. 1 is the schematic diagram of the film coating apparatus 10 of an embodiment of the present invention, and Fig. 2 is the circuit block diagram of multiple electrodes 120 of Fig. 1.As shown in Figures 1 and 2, film coating apparatus 10 on base material 11, carries out plated film by plasma 14.Film coating apparatus 10 as shown in the embodiment of figure 1, it utilizes physical method to be deposited on base material 11 by the mode such as ionized by target 12.In one embodiment, base material 11 can be a wafer, but the present invention is not as limit.In one embodiment, target 12 can be essentially pure metal or compound, but the present invention is not as limit.
Please continue to refer to Fig. 1 and Fig. 2, film coating apparatus 10 comprises plated film chamber 100, microscope carrier 110, multiple electrode 120, multiple control unit 130, target setting table 140 and multiple magnet 150.More specifically, film coating apparatus 10 has a device body 99, and plated film chamber 100 is the space of device body 99 inside.Microscope carrier 110 is configured in plated film chamber 100, and microscope carrier 110 is in order to hold base material 11.Multiple electrode 120 is configured on microscope carrier 110.Target setting table 140 is configured in plated film chamber 100.Target setting table 140 is in order to hold target 12, and the base material 11 of target setting table 140 on microscope carrier 110.Multiple magnet 150 is configured in plated film chamber 100, and multiple magnet 150 is positioned at the side of target setting table 140 away from microscope carrier 110.
In the embodiment of figure 1, film coating apparatus 10 can go back air inclusion ingress S and vacuum pumps 160.Gas inlet place S is in order to provide a working gas in plated film chamber 100, and wherein working gas can be such as argon gas.Vacuum pumps 160 is in order to be evacuated to a predetermined pressure by the working gas in process zone 16.In addition, in the embodiment of figure 1, target setting table 140 can be connected to a power supply unit 15.Utilize power supply unit 15 to apply to be biased on target 12, plasma 14 can be produced in process zone 16, and attract the positive ion of working gas (as argon gas) to move to bombard the atom of target 12 towards target 12.
In the embodiment of figure 1, multiple magnet 150 has contrary magnetic pole (i.e. arctic N and South Pole S) respectively, and the arctic N of described multiple magnet 150 and South Pole S-phase are to setting.The magnetic pole of magnet 150 can create the magnetic field through target 12 and process zone 16.The motion of electronics or charged ion can be limited in magnetic field in process zone 16.Therefore, the Distribution of Magnetic Field of controlling magnet 150 can control shape and the uniformity coefficient of the film 13 on base material 11.
In the embodiment of figure 1, multiple electrode 120 is configured at microscope carrier 110 on the surface of target setting table 140, but the present invention is not as limit.In other embodiments, multiple electrode 120 is configurable inner in microscope carrier 110.Multiple control unit 130 is electrically connected multiple electrode 120 respectively.More specifically, in the embodiment of figure 1, what each electrode 120 all can be independent controlled by a control unit 130.Control unit 130 can apply one and be biased on electrode 120, to attract the charged ion of the process zone 16 in plated film chamber 100.In one embodiment, control unit 130 direct supply can be provided or with the small-signal AC bias of direct current (DC) bias to electrode 120, wherein provide the sedimentation rate of the controlled made membrane 13 of direct current (DC) bias, and small-signal AC bias makes charged particle vibrate, contribute to the density promoting film 13.In one embodiment, direct current (DC) bias can be the voltage of positive and negative 3 volts (V), and small-signal AC bias is amplitude (Vpp) about 500 ~ 300 millivolts of (mv) or less AC signals.In particular, the amplitude (Vpp) of AC signal is less than more than direct current (DC) bias size about order of magnitude; For above-mentioned, the small-signal AC power of this tool direct current (DC) bias is the AC signal that positive and negative 3 volts of (V) volts DSs add about 500 ~ 300mV or less (as 500mV ~ 10mv), and the voltage of right direct current (DC) bias of the present invention is non-to be limited with above-mentioned 3 volts (V).In yet, control unit 130 can provide the voltage of about 5 volts (V) to about 1000 volts (kV) to electrode 120.In another embodiment, the potential variation that control unit 130 is provided to electrode 120 can be any form, such as, can be sine wave, square wave or choppy sea etc.
In the embodiment of Fig. 1 and Fig. 2, each electrode 120 all can separately be controlled by control unit 130.Thus, when the charged ion in process zone 16 is for being deposited on base material 11, electrode 120 suction band electron ion can be deposited into specific region on base material 11, and therefore electrode 120 can in order to improve the uniformity coefficient of film 13.If only controlled merely the uniformity coefficient of the film 13 on base material 11 conversely speaking, by the Distribution of Magnetic Field of magnet 150.Because magneticstrength is not consistent in process zone 16, so may or some region of film 13 can be caused thicker, some region be thinner.Therefore, the specific region on base material 11 is deposited into by the direct suction band electron ion of electrode 120, the uniformity coefficient of the film 13 on base material 11 can be improved, such as, apply to be biased on corresponding electrode 120 with suction band electron ion in the region that base material 11 upper film 13 thickness expectation meeting is thinner.In addition, in one embodiment, electrode 120 also can be used as electrostatic chuck, in order to adsorb base material 11.
Then, please refer to Fig. 3, Fig. 4 and Fig. 5, wherein Fig. 3 be can electrode 120 pattern of application drawing 4 and Fig. 5 to improve the embodiment of film 13 uniformity coefficient on base material 11, Fig. 4 and Fig. 5 is respectively the pattern schematic diagram of multiple electrodes 120 of the different embodiment of the present invention, and wherein the visual angle of Fig. 4 and Fig. 5 is roughly vertical in order to the surface of placing base material 11 with microscope carrier 110.Fig. 3 is the example not yet improving film 13 uniformity coefficient through electrode 120.As shown in Figure 3, film 13 thickness on base material 11 is also uneven.The middle portion of film 13 is thicker, and both sides are thinner.In brief, the thickness size of the film 13 on the base material 11 in Fig. 3 is symmetrically distributed with medullary ray X.
In view of this, in order to improve the uniformity coefficient of film 13 in Fig. 3, base material 11 can be placed on the microscope carrier 110 of electrode 120 pattern with Fig. 4 or Fig. 5.As shown in Figure 4, the pattern of each electrode 120 can be annular, wherein each electrode 120 in fact concentrically circle be distributed on microscope carrier 110.As shown in Figure 5, multiple electrode 120 is arranged roughly in circular pattern.When base material 11 will carry out plated film operation, the back side (front plated film) of base material 11 is the circular patterns in Fig. 4 or Fig. 5.It is worth mentioning that, in Fig. 4 and Fig. 5, each electrode 120 all can independently be controlled.That is, user can optionally demand only apply to be biased into peripheral electrode 120.The method of the bias voltage of control electrode 120 can be realized by the control unit 130 of Fig. 2, wherein in the embodiment of Fig. 4 and Fig. 5, the number of control unit (not illustrating) is the same with the number of electrode 120, and independently to control each electrode 120, but the present invention is not as limit.In another embodiment, the number of control unit may be less than the number of electrode 120.Now, control unit can control two or more and the adjacent electrode 120 in position.
Because each electrode 120 in Fig. 4 and Fig. 5 can independently be controlled, if therefore known previous film 13 middle portion thicker (as shown in Figure 3), then when carrying out new plated film operation, can independently apply to be biased in Fig. 4 and Fig. 5 compared with the electrode 120 away from central area, and the electrode 120 of closer central area does not apply bias voltage, with suction band electron ion to the both sides of base material 11, and improve the thicker problem of previous film 13 middle portion.Or in another embodiment, can independently apply higher to be biased into Fig. 4 and Fig. 5 compared with the electrode 120 away from central area, and the electrode 120 of closer central area applies lower bias voltage, to attract more charged ion to the both sides of base material 11, and improve the thicker problem of previous film 13 middle portion.Thus, in coating process, originally be about to be deposited into the molecule in base material 11 mid-way or atom and can be attracted to position compared with both sides by electrode 120, film 13 thickness in base material 11 mid-way is reduced, so as to improving the uneven problem of film 13 in Fig. 3.
Please refer to Fig. 6, Fig. 7 and Fig. 8, wherein Fig. 6 be can electrode 120 pattern of application drawing 7 and Fig. 8 to improve the embodiment of the uniformity coefficient of the film 13 on base material 11, Fig. 7 and Fig. 8 is respectively the pattern schematic diagram of multiple electrodes 120 of the different embodiment of the present invention, and wherein the visual angle of Fig. 7 and Fig. 8 is roughly vertical in order to the surface of placing base material 11 with microscope carrier 110.Fig. 6 is the example not yet improving the uniformity coefficient of film 13 through electrode 120.As shown in Figure 6, film 13 thickness on base material 11 is also uneven.The side of film 13 is thicker, and opposite side is thinner.
In order to improve the uniformity coefficient of film 13 in Fig. 6, base material 11 can be placed on the microscope carrier 110 of electrode 120 pattern with Fig. 7 or Fig. 8.As illustrated in figs. 7 and 8, each electrode 120 is circular.In the figure 7, multiple electrode 120 is distributed in uniformly in microscope carrier 110.In fig. 8, multiple electrode 120 is at the distribution comparatively dense of central area, and the distribution in area is more sparse around.Be similar to Fig. 4 and Fig. 5, in Fig. 7 and Fig. 8, multiple electrode 120 all can independently be controlled.Therefore, in the present embodiment, if known previous film 13 side is thicker, opposite side thinner (as shown in Figure 6), then when carrying out new plated film operation, the region of the thinner side of corresponding diagram 6 is contained in Fig. 7 and Fig. 8 electrode 120 can apply bias voltage independently, and 120, the electrode of thicker opposite side does not apply bias voltage, with suction band electron ion to executing in biased electrode 120, and improve the thicker and problem that opposite side is thinner in previous film 13 side.Or in another embodiment, the region of the thinner side of corresponding diagram 6 is contained in Fig. 7 and Fig. 8 electrode 120 can apply higher bias voltage independently, and the electrode 120 of thicker opposite side applies lower bias voltage, with attract more charged ion to have apply higher biased electrode 120 on, and improve the thicker and problem that opposite side is thinner in previous film 13 side.Thus, in coating process, the charged ion being originally about to be deposited into thicker side is movable to thinner side, and improves the problem that in Fig. 6, film 13 is uneven.
It is to be understood that in other embodiments, because the electrode in Fig. 5 120 is also the embodiment of both sides independent distribution, so the uniformity coefficient in order to improve film 13 in Fig. 6, also base material 11 can be placed on the microscope carrier 110 of electrode 120 pattern with Fig. 5.
Please refer to Fig. 9 and Figure 10, it is respectively the pattern schematic diagram of multiple electrodes 120 of the different embodiment of the present invention, and wherein the visual angle of Fig. 9 and Figure 10 is roughly vertical in order to the surface of placing base material 11 with microscope carrier 110.In fig .9, each electrode 120 is fan-shaped, and each fan-shaped central angle is roughly near central distribution.In Fig. 10,120, multiple electrode is arranged in scallop, and when base material 11 will carry out plated film operation, base material 11 is the scallops in Fig. 9 or Figure 10.In the embodiment of Fig. 9 and Figure 10, can improve for the embodiment that the thickness of the film 13 on base material 11 is roughly consistent.More precisely, if the thickness of known previous film 13 is roughly equal, then when carrying out new plated film operation, multiple electrode 120 in Fig. 9 and Figure 10 can be selected.The area of each electrode 120 of Fig. 9 and Figure 10 is greater than the area of each electrode 120 of Fig. 7 ~ Fig. 8, when making the electrode 120 of Fig. 9 and Figure 10 be applied in a bias voltage, can attract large-area charged ion, and promote sedimentation rate and the density of film 13.
It is to be understood that in the embodiment of Fig. 9 and Figure 10, because electrode 120 is also the embodiment of both sides independent distribution, therefore also can be used for improving the uniformity coefficient of film 13 in Fig. 6.In addition, in the embodiment of Fig. 4 ~ Fig. 5 and Fig. 7 ~ Fig. 8, except can improving the uniformity coefficient of film 13, in fact also can be used for improving further sedimentation rate and the density of film 13.
Then, please refer to Figure 11, it is the film coating apparatus 20 of another embodiment of the present invention.Film coating apparatus 20 in the embodiment of Figure 11 place different from the film coating apparatus 20 in the embodiment of Fig. 1 is, the film coating apparatus 20 of Figure 11 utilizes chemical process (as chemical vapour deposition) that base material 11 is plated certain material.Further, film coating apparatus 20 includes shower nozzle 210.Shower nozzle 210 is configured at the position of the gas inlet place G in plated film chamber 100.Shower nozzle 210 has multiple spout 211.Described spout 211 is in the face of microscope carrier 110, and the process gas that wherein gas inlet place G provides can move towards microscope carrier 110 via spout 211, as shown in the direction of arrow in Figure 11.In one embodiment, process gas can be organic or inorganic gas, and it can react with precursor (precursor) and produce the film for depositing.The by product produced in reaction process then can be taken away by gas outlet O.
In the embodiment of Figure 11, film coating apparatus 20 can also comprise plasma generating chamber 200, and plasma generating chamber 200 can utilize microwave or radio frequency power and produce plasma in wherein.As shown in figure 11, process gas first just can arrive gas inlet place G via after plasma generating chamber 200 ionization.The electrode 120 that process gas after ionization can be applied in bias voltage attracted.Will be appreciated that, in other embodiments, film coating apparatus 20 can not comprise extra plasma generating chamber 200, and namely film coating apparatus 20 directly can produce plasma in plated film chamber 100, such as configurable in order to produce isoionic radio-frequency electrode in the plated film chamber 100 of film coating apparatus 20.In addition, be similar to the embodiment of Fig. 1, the electrode 120 of the embodiment of Figure 11 can respectively by control unit 130 independently control (as shown in Figure 2).Apply independently to be biased on each electrode 120 by control unit 130, uniformity coefficient and the sedimentation effect of the film 13 on base material 11 can be improved.In addition, electrode 120 pattern in the embodiment of Figure 11 as shown in Fig. 4 ~ Fig. 5, Fig. 7 ~ Fig. 8 and Fig. 9 ~ Figure 10, such as, can be annular, circle or fan etc., does not just repeat at this.
Although the present invention discloses as above with embodiment; so itself and be not used to limit content of the present invention; anyly be familiar with this those skilled in the art; without departing from the spirit and scope of the present invention; when being used for a variety of modifications and variations, the scope that therefore protection domain of content of the present invention ought define depending on appending claims is as the criterion.
Claims (10)
1. a film coating apparatus, is characterized in that, carries out plated film by plasma on a base material, and this film coating apparatus comprises:
One plated film chamber;
One microscope carrier, be configured in this plated film chamber, this microscope carrier is in order to hold this base material;
Multiple electrode, is configured at this microscope carrier; And
Multiple control unit, is electrically connected described electrode respectively, and wherein said control unit is biased in described electrode in order to apply one respectively, to attract the charged ion for plated film in this plated film chamber.
2. film coating apparatus according to claim 1, is characterized in that, this bias voltage comprises a direct supply.
3. film coating apparatus according to claim 1, is characterized in that, this bias voltage comprises the small-signal AC power of a tool direct current (DC) bias.
4. film coating apparatus according to claim 1, is characterized in that, respectively this electrode is circular, annular and fan-shaped.
5. film coating apparatus according to claim 1, is characterized in that, described electrode array becomes a circular pattern, and this circular pattern is in the face of this base material.
6. film coating apparatus according to claim 1, is characterized in that, described electrode array becomes a scallop, and this scallop is in the face of this base material.
7. film coating apparatus according to claim 1, is characterized in that, see it by the direction of this microscope carrier vertical, described electrode is distributed in this microscope carrier uniformly.
8. film coating apparatus according to claim 1, is characterized in that, also comprises:
One target setting table, is configured in this plated film chamber and in the face of this microscope carrier, this target setting table is in order to hold a target.
9. film coating apparatus according to claim 8, is characterized in that, also comprises:
Multiple magnet, is configured in this plated film chamber, and described magnet is positioned at the side of this target setting table away from this microscope carrier.
10. film coating apparatus according to claim 1, is characterized in that, also comprises:
One shower nozzle, be configured at the gas inlet place in this plated film chamber, and this shower nozzle has multiple spout, and described spout is in the face of this microscope carrier, and the process gas that wherein this gas inlet place provides moves towards this microscope carrier via described spout.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510245444.6A CN104947048A (en) | 2015-05-14 | 2015-05-14 | Coating device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510245444.6A CN104947048A (en) | 2015-05-14 | 2015-05-14 | Coating device |
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| CN104947048A true CN104947048A (en) | 2015-09-30 |
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| CN201510245444.6A Pending CN104947048A (en) | 2015-05-14 | 2015-05-14 | Coating device |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62188777A (en) * | 1986-02-13 | 1987-08-18 | Anelva Corp | Bias sputtering device |
| CN1100151A (en) * | 1993-06-24 | 1995-03-15 | 松下电器产业株式会社 | Sputtering pole |
| US5711812A (en) * | 1995-06-06 | 1998-01-27 | Varian Associates, Inc. | Apparatus for obtaining dose uniformity in plasma doping (PLAD) ion implantation processes |
| KR20000043924A (en) * | 1998-12-29 | 2000-07-15 | 김영환 | Plasma depositing apparatus and method of forming insulating film of semiconductor device |
| JP2002053949A (en) * | 2000-08-03 | 2002-02-19 | Nikon Corp | Apparatus and method for thin film deposition, and worked piece with thin film deposited thereon |
-
2015
- 2015-05-14 CN CN201510245444.6A patent/CN104947048A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62188777A (en) * | 1986-02-13 | 1987-08-18 | Anelva Corp | Bias sputtering device |
| CN1100151A (en) * | 1993-06-24 | 1995-03-15 | 松下电器产业株式会社 | Sputtering pole |
| US5711812A (en) * | 1995-06-06 | 1998-01-27 | Varian Associates, Inc. | Apparatus for obtaining dose uniformity in plasma doping (PLAD) ion implantation processes |
| KR20000043924A (en) * | 1998-12-29 | 2000-07-15 | 김영환 | Plasma depositing apparatus and method of forming insulating film of semiconductor device |
| JP2002053949A (en) * | 2000-08-03 | 2002-02-19 | Nikon Corp | Apparatus and method for thin film deposition, and worked piece with thin film deposited thereon |
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