CN1896298A - Improved magnetron sputtering system for large-area substrates - Google Patents

Improved magnetron sputtering system for large-area substrates Download PDF

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Publication number
CN1896298A
CN1896298A CNA2005101152464A CN200510115246A CN1896298A CN 1896298 A CN1896298 A CN 1896298A CN A2005101152464 A CNA2005101152464 A CN A2005101152464A CN 200510115246 A CN200510115246 A CN 200510115246A CN 1896298 A CN1896298 A CN 1896298A
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China
Prior art keywords
substrate
treatment zone
anode
target
plasma
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CNA2005101152464A
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Chinese (zh)
Inventor
约翰·怀特
细川明广
海民和·H·勒
稻川真
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Applied Materials Inc
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Applied Materials Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3438—Electrodes other than cathode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins

Abstract

The present invention generally provides an apparatus and method for processing a surface of a substrate in physical vapor deposition (PVD) chamber that has an increased anode surface area to improve the deposition uniformity on large area substrates. In general, aspects of the present invention can be used for flat panel display processing, semiconductor processing, solar cell processing, or any other substrate processing. In one aspect, the processing chamber contains one or more adjustable anode assemblies that are used to increase and more evenly distribute the anode surface area throughout the processing region of the processing chamber. In one aspect, the one or more adjustable anode assemblies are adapted to exchange deposited on anode surfaces with new, un-deposited on, anode surfaces without breaking vacuum. In another aspect, a shadow frame that has a path to ground is adapted to contact a deposited layer on the surface of a substrate during deposition to increase the anode area and thus deposition uniformity.

Description

The improvement magnetron sputtering system that is used for the big area substrate
Technical field
The embodiments of the invention relate generally to is suitable for film is deposited on substrate plasma treatment appts and method on the substrate surface.
Background technology
The physical vapor deposition (PVD) of using magnetron is that metal deposition is electrically connected and a kind of main method of other structures to form in integrated circuit (IC)-components on the semiconductor integrated circuit.During PVD handles, with the target electrical bias so that the ion that produces in the treatment zone can and make atom shift out from target with enough energy bombardment target surfaces.Target bias made ion bombardment target surface with generation and remove the so-called sputter of processing of the plasma body of atom from the target surface.Sputtered atom usually towards the wafer trajectory that is just being applied by sputter advance, and sputtered atom is deposited on the wafer.Perhaps, the another kind of gas in atom and the plasma body (for example nitrogen) reacts reactively compound is deposited on the wafer.Reactive sputtering is often used in forming on the sidepiece in narrow hole thin the stopping and nucleating layer of titanium nitride or tantalum nitride.
The DC magnetron sputtering is commercial the most frequently used sputter form.Metallic target is biased into the negative DC bias voltage of-400 to-600 volts of DC scopes of pact to attract the positively charged ion of working gas (for example argon gas) with sputter metal atoms towards target.Usually, the sidepiece of sputterer is coated with guard shield and protects locular wall to avoid sputtering sedimentation.Guard shield provides the anode opposite with target cathode usually electrical ground and therefore, and the DC target power supply capacitively is coupled in chamber and the plasma body thereof.
Magnetron with at least one pair of opposite magnetic pole is usually placed near the back of target, with produce near and be parallel to the magnetic field of the front surface of target.From this opposite magnet induced magnetic field is disappeared to anode surface or life-span of catching electronics and prolonging electronics before combining again with the gas atom the plasma body at electronics.Since life-span that prolongs and the needs of keeping charge neutrality in the plasma body, extra argon ion attracted to the magnetron adjacent areas in at this place formation high density plasma.Thereby, improved sputter rate.
But traditional sputter has brought at big area substrate (for example flat-panel display substrates) and has gone up the challenge that forms advanced unicircuit.Usually use for TFT, substrate is to have greater than about 2000cm 2The glass substrate of surface-area.Usually, TFT handles the equipment ordinary construction for holding big extremely about 1.5 * 1.8 meters substrate.But, can predict in the near future and be configured to hold the big processing equipment that extremely also surpasses 2.16 * 2.46 meters substrate of size.A problem that is proposed is: it is unpractical making the surface-area ratio of keeping negative electrode (target) antianode surface-area commonly used in the conventional sputter treatment chamber in enough big chamber.Trial keeps that the surface-area ratio may cause because the manufacturing difficulty of bringing for the large size that realizes the part that desired area ratio is required, and with handle before need big like this volumetric pump is drawn onto the relevant handling problem of desired pressure of foundation.With respect to bigger target surface-area, the anode surface area that reduces makes that usually the plasma density that is produced is very big to the edge variation of target from the center of target in treatment zone (it is defined as below the target and zone more than the substrate usually).Because anode surface is usually around the peripheral distribution of target,, and therefore reduced near the plasma density the pinwheel so it is more favourable from target surface emitting electronics to think that bigger distance from the pinwheel to the anode surface makes in target edge.The amount of ions that reduces to reduce bombardment target surface in this regional area of the plasma density in each zone of entire target surface, and therefore change on the entire substrate surface the homogeneity of sedimentary film, there is certain distance on this substrate and target surface.Therefore insufficient annode area problem will make and self show as membrane thickness unevenness, and it is littler with respect to the edge near the center of substrate.
For solving insufficient annode area problem, the supplementary anode structure that some cases have been installed the treatment zone that is arranged under the target improves anode surface area.The anode construction of being installed generally includes fixed anode structure (for example collimator) or is positioned at scan anode structure under the target surface, this scan anode structure along with the magnetron structures that moves during deposition process during translation, aims at magnetron structures and mobile thereupon.A problem to the anode construction that keeps or install in the treatment zone is that it is deposited during handling continuously as time passes, therefore makes the size and dimension of its structure change in time.Because the PVD formula is handled normally hair-line(crack) formula (line of sight type) depositing treatment, so the change in time of the size and dimension of its structure will make that deposition uniformity changes in time.And structurally deposition target material has also increased the possibility of following situation, promptly thereon material of deposition during handling since be deposited on form in these structural films interior or external stress and will breaking and peel off.Breaking and peeling off of deposited film can produce particulate, and its influence uses this to handle the yield rate of the device that forms.
Therefore, have the needs to such method and apparatus, it can form more uniform plasma body in the PVD treatment chamber, and it will not produce particle and can overcome other above-mentioned shortcomings.
Summary of the invention
The present invention usually provides a kind of plasma treatment chamber component that will be deposited upon on the substrate of being used for, and it comprises: the plasma processing chamber with treatment zone; Target, described target are positioned at and make the surface of described target contact with described treatment zone on the described plasma processing chamber; Be positioned at the indoor anode shield of described plasma treatment, the surface of wherein said anode shield contacts with described treatment zone; It is indoor and have the substrate holder of substrate receiving surface to be positioned at described plasma treatment, and the surface that wherein is positioned at the substrate on the described substrate receiving surface contacts with described treatment zone; And have the first surface that is positioned in the described treatment zone and be positioned at the second anode member of the outer second surface of described treatment zone, wherein, described first surface can be removed and described second surface can be positioned in the described treatment zone from described treatment zone by using actuator.
Embodiments of the invention can also provide a kind of plasma treatment chamber component that will be deposited upon on the substrate of being used for, and it comprises: the plasma processing chamber with treatment zone; Target, described target are positioned at and make the surface of described target contact with described treatment zone on the described plasma processing chamber; Be positioned at the indoor anode shield of described plasma treatment, wherein said anode shield comprises: around one or more walls of described treatment zone, form first groove by one of described one or more walls and form second groove by one of described one or more walls; It is indoor and have the substrate holder of substrate receiving surface to be positioned at described plasma treatment, and the surface that wherein is positioned at the substrate on the described substrate receiving surface contacts with described treatment zone; With one or more adjustable anode assemblies, comprise: extend through described first groove and described second groove and have the surface that contacts with described treatment zone the second anode member, to be positioned at described treatment zone outer and be connected to the feed rolls assembly of described second anode member and be positioned at described treatment zone outer and be connected to the material receiving roller assembly of described second anode member, wherein said feed rolls assembly and described material receiving roller assembly are suitable for adjusting synergistically the position on the described surface of described second anode member in described treatment zone.
Embodiments of the invention can also provide a kind of plasma treatment chamber component that will be deposited upon on the substrate of being used for, and comprising: the plasma processing chamber with treatment zone; Target, described target are positioned at and make the surface of described target contact with described treatment zone on the described plasma processing chamber; Be positioned at the indoor anode shield of described plasma treatment, the surface of wherein said anode shield contacts with described treatment zone; Have the substrate holder that is positioned at the indoor substrate receiving surface of described plasma treatment, the substrate that wherein is positioned on the described substrate receiving surface contacts with described treatment zone; And have the surface that contacts with described treatment zone and have shadow frame with the conductive features body of described anode shield electric connection, wherein said conductive features body is suitable for contacting the metal level that is formed on the substrate, described substrate orientation is on described substrate receiving surface.
It is a kind of with the method for thin film deposition on substrate that embodiments of the invention can also provide, and comprising: substrate is placed on the substrate holder in the treatment zone that is installed on treatment chamber; On the first processing position of described substrate orientation in the described treatment zone of plasma processing chamber; To be deposited on the surface that is positioned at the described substrate on the described substrate holder; On the second processing position of described substrate orientation in the described treatment zone of described plasma processing chamber, wherein described substrate orientation is electrically contacted at the layer that the feasible shadow frame electrical ground of the locational step of described second processing is arranged to and is deposited on the described substrate surface; On the described surface that will be deposited to the described substrate that is positioned on the described substrate holder.
Description of drawings
For can understood in detail above-mentioned feature of the present invention, the present invention to above succinct summary more specifically describes with reference example, and some of them illustrate in the accompanying drawings.But it should be noted that accompanying drawing only illustrates the exemplary embodiments of this invention, and therefore should not be considered to restriction, because the present invention can allow other to have the embodiment of effect same to its scope.
Fig. 1 is the vertical sectional view of conventional physical vapor deposition chamber.
Fig. 2 A is the vertical sectional view of exemplary physical vapor deposition chamber.
Fig. 3 A is formed in the vertical sectional view of the treatment zone in the exemplary physical vapor deposition chamber.
Fig. 3 B is formed in the vertical sectional view of the treatment zone in the exemplary physical vapor deposition chamber.
Fig. 3 C is formed in the vertical sectional view of the treatment zone in the exemplary physical vapor deposition chamber.
Fig. 3 D is formed in the vertical sectional view of the treatment zone in the exemplary physical vapor deposition chamber.
Fig. 4 A is formed in the horizontal cross of the treatment zone in the exemplary physical vapor deposition chamber.
Fig. 4 B is formed in the horizontal cross of the treatment zone in the exemplary physical vapor deposition chamber.
Fig. 4 C is formed in the horizontal cross of the treatment zone in the exemplary physical vapor deposition chamber.
Fig. 4 D is the horizontal cross of the motion assembly shown in Fig. 4 A-C, and it can be used for realizing aspect of the present invention disclosed herein.
Fig. 5 A can be used in the target in the exemplary physical vapor deposition chamber and the vertical sectional view of magnetron assembly.
Fig. 5 B is the vertical sectional view of exemplary physical vapor deposition chamber.
Fig. 6 A is formed in the vertical sectional view of the treatment zone in the exemplary physical vapor deposition chamber.
Fig. 6 B is the vertical sectional view of exemplary physical vapor deposition chamber.
Fig. 6 C is the vertical sectional view of exemplary physical vapor deposition chamber.
Fig. 6 D is the schema that is used for the method steps of deposition homogeneous layer on substrate according to various embodiments of the present invention.
Fig. 6 E is the schema that is used for the method steps of deposition homogeneous layer on substrate according to various embodiments of the present invention.
Fig. 6 F is the isometric cutaway view such as grade of the treatment zone of exemplary physical vapor deposition chamber.
Fig. 6 G is formed in the vertical sectional view of the treatment zone in the exemplary physical vapor deposition chamber.
Embodiment
The present invention usually provides a kind of apparatus and method that are used for handling in the PVD chamber substrate surface, and its anode surface area with increase is to improve deposition uniformity.Generally speaking, aspect of the present invention can be used for flat-panel monitor processing, semiconductor processes, solar cell processing or any other substrate processing.Below with reference to the physical vapor deposition system that is used to handle the big area substrate the present invention is described explanatoryly, for example the PVD system that can obtain from the AKT of branch office of the Applied Materials Inc of California Santa Clara.In one embodiment, treatment chamber is suitable for handling and has at least about 2000cm 2The substrate of surface-area.In another embodiment, treatment chamber is suitable for handling and has at least about 19 500cm 2(the substrate of surface-area of 1300mm * 1500mm) for example.But, it should be understood that these apparatus and method can be used for the other system structure, comprise those systems that are configured to handle big area circle substrate.
Fig. 1 illustrates the sectional view of the treatment zone of conventional physical gas deposition (PVD) chamber 1.Conventional P VD chamber 1 comprises target 8, vacuum chamber 2, ground(ed) shield 3, shield ring 4, target isolator 6, DC power supply 7 usually, handles gas source 9, vacuum pumping system 13 and substrate holder 5.For carrying out sputter process, the processing gas such as argon gas is sent to the conventional P VD chamber 1 of finding time from gas source 9, and in treatment zone 15, produces plasma body owing to the negative bias of utilizing DC power supply 7 to produce between target 8 and the ground(ed) shield 3.Generally speaking, mainly by from the electron emission on target surface and the secondary emission that causes by the ion bombardment of bearing (negative electrode) target surface, producing and keep plasma body owing to target bias.Before carrying out one or more PVD treatment steps, by using vacuum pumping system 13 vacuum chamber 2 pumps are drawn onto pressure of foundation (for example 10-6 to 10-9 holds in the palm) usually.
Fig. 1 intention by emphasize near the surface emitting the pinwheel of target 8 electronics (seeing e-) (seeing path " A ") with distinguish from the path between near the electronics (seeing path " B ") of the surface emitting the edge of target, be shown in one of reason of large area substrate processing chambers ionic medium body ununiformity.Though the electronics that leaves pinwheel through longer to the path, ground can increase electronics its disappear to anode surface or with plasma body in contained ion experience the number of times of collision before combining again, but will launch near the edge of target from a collection of electronics of target 8 emissions, this is to have reduced because of the resistance of this path to ground.Near the target edge to the resistance in the path on ground reduce be since the low impedance path of one or more materials by conductive target 8 and electronics arrive the more short path length (" B ") in path.Therefore low impedance path is tending towards improving target edge neighbouring current density and plasma density, thereby the quantity of material of place, edge sputter has been improved at the center of target 8 relatively.
Increase the hardware of annode area
Fig. 2 A illustrates the vertical sectional view of an embodiment of the treatment chamber 10 that can be used to realize each side of the present invention described herein.In the structure shown in Fig. 2 A, treatment chamber 10 comprises and is used in the entire treatment zone 15 and increases and the more one or more adjustable anode assemblies 90 of distributed anode surface-area.Fig. 2 A illustrates the locational substrate 12 of the processing that is arranged in treatment zone 15.Generally speaking, treatment chamber 10 comprises cap assemblies 20 and following chamber component 35.Cap assemblies 20 comprises target 24, capping 22, ceramics insulator 26, one or more o type annular seal 29 usually and is arranged in one or more magnetron assemblies 23 in target dorsal part zone 21.Usually, each magnetron assembly 23 will have at least one magnet 27 that comprises a pair of opposite magnetic pole (i.e. north level (N) and the South Pole (S)), and this produces the magnetic field (B-field) (seeing the element " B " among Fig. 5 A) of passing target 24 and treatment zone 15 to magnetic pole.Fig. 2 A illustrates the sectional view of an embodiment of the treatment chamber 10 with a magnetron assembly 23, and this magnetron assembly 23 comprises three magnets 27 that are positioned at target 24 dorsal part places.It should be noted that though the target 24 shown in Fig. 2 A has backboard 24B and target material 24A, other embodiment of the present invention can use the target of solid or one chip, and can be not different with base region of the present invention.The patent application of submitting on June 7th, 2,004 10/863,152[AMAT8841] (U.S. Provisional Patent Application of submitting on January 7th, 2,004 60/534 is enjoyed in requirement, 952 right) further described in to be suitable for making and described the exemplary magnetron assembly that the present invention is benefited herein, its content is contained in this by not quoting with the inconsistent degree integral body of require invention.
Following chamber component 35 comprises substrate holder assembly 60, chamber body assembly 40, guard shield 50 usually, handles gas delivery system 45 and shadow frame 52.Shadow frame 52 is generally used for covering the edge of substrate, with prevent or minimization during at the edge and the deposition on the substrate holder 61 (seeing Fig. 2 A) of substrate 12.Chamber body assembly 40 comprises at the bottom of one or more locular walls 41 and the chamber 42 usually.At the bottom of one or more locular walls 41, the chamber 42 and target 24 form vacuum-treat zones 17 usually with following vacuum area 16 and treatment zone 15.In one aspect, the guard shield of guard shield 50 is installed surperficial 50A and is installed on the earthing chamber guard shield bearing 43 that is formed in the locular wall 41 or is connected thereto, with guard shield 50 ground connection.Handle gas delivery system 45 and comprise the one or more gas source 45A that flow and be communicated with one or more inlet mouth 45B usually, to transport the processing gas that can use during plasma treatment, wherein said one or more inlet mouth 45B directly are communicated with following vacuum area 16 (shown in Fig. 2 A) and/or treatment zone 15.Usually, the processing gas that uses in the PVD formula is used is the rare gas element of argon gas and so on for example, but also can use other gases such as nitrogen.
Substrate holder assembly 60 comprises substrate holder 61 usually, be suitable for the axle 62 of support substrates bearing 61 and sealably be connected to axle 62 and chamber at the bottom of 42 corrugated tubes 63 that form the mobile vacuum sealing member, the sealing part allows substrate holder 61 to be positioned at down in the chamber component 35 by lifting mechanism 65.Lifting mechanism 65 can comprise the DC servomotor that is suitable for that substrate holder 61 and substrate 12 be positioned at desired locational conventional linear slide block (not shown), pneumatic cylinder (not shown) in the treatment zone 15 and/or is attached to the guide bolt (not shown).
With reference to figure 2A, following chamber component 35 also will comprise substrate lifting member 70, slit valve 46 and vacuum pumping system 44 usually.Lifting subassembly 70 comprises three or more lifting pins 74, riser 73 usually, promotes actuator 71 and corrugated tube 72, corrugated tube 72 sealably is connected to and promotes at the bottom of actuator 71 and the chamber 42, can remove and change to be positioned at from the central transfer chamber (not shown) and extend to down substrate on the automation supporting plate (not shown) the chamber component 35 so that promote pin 74.The automation supporting plate that extends enters down chamber component 35 by the access port in the locular wall 41 32 and is positioned on the substrate holder 61 that is positioned on the transferring position (not shown).Vacuum pumping system 44 ( element 44A and 44B) can comprise cryopump, turbo-pump, cryogenic turbo pump, preliminary pump and/or Roots blower pump usually, is drawn into desired basis and/or processing pressure will descend vacuum area 16 and treatment zone 15.Be suitable for slit valve 46 against or can be traditional, pneumatic actuator known in the field away from one or more locular wall 41 localized slit valve actuator (not shown).
For each treatment chamber 10 parts and treatment variable of control during depositing treatment, used controller 101.Can be generally the treatment variable of controlling treatment chamber based on the controller 101 of the controller of microprocessor by use.Each transmitter that controller 101 is configured to from user and/or plasma processing chamber receives input, and correctly controls the plasma treatment chamber component according to the software instruction of preserving in each input and the controller storage.Controller 101 comprises controlled device usually and is used to preserve various programs, handling procedure and the storer and the CPU of steering routine when needed.Storer is connected to CPU, and can be one or more storeies that easily obtain of Local or Remote, for example the digital storage equipment of random-access memory (ram), read-only storage (ROM), floppy disk, hard disk or any other form.Software instruction and data can be encoded and be stored in and be used to indicate CPU in the storer.Support circuit also to be connected to CPU and be used for supporting in a conventional manner treater.Support that circuit can comprise buffer memory, power supply, clock circuit, input/output circuitry system, subsystem and all similar circuit known in the field.Controller 101 readable programs (or computer instruction) judge which task can carry out in plasma processing chamber.Preferably, program is the readable software of controller 101, and comprises that instruction comes based on definition rule and input data management and control plasma treatment.
Fig. 2 A also illustrates an embodiment of the one or more adjustable anode assemblies 90 that is positioned at down in the chamber component 35.Generally speaking, adjustable anode assemblies 90 has the conductive member 91 that extends through treatment zone 15, and is grounded so that owing to anode surface makes the plasma body that produces in the treatment zone 15 more even with respect to the more uniform distribution of all zones of the surperficial 24C of target.In one aspect, conductive member 91 can be lead, Stranded cable, metal strip, sheet or the traverse net of being made by the conducting metal of for example titanium, aluminium, platinum, copper, magnesium, chromium, manganese, stainless steel, Hastelloy C, nickel, tungsten, tantalum, iridium, ruthenium and alloy and/or its combination (wire mesh).Usually, conductive member 91 need be made certain size and be made by the material with enough electroconductibility (to receive a current generated sizable part when target is biased), is also made by the material with enough high-melting-points and sufficient intensity (with the high temperature that will run into during handling time not obvious distortion under the weight of metal refining) simultaneously.High temperature may fall by the radial pattern heat transfer with from the IR of the electric current by conductive member 91 and add thermogenesis.Illustrate the example of some various embodiment of conductive member 91 in conjunction with Fig. 3 A-D and Fig. 4 A-B, this will be in following discussion.
For carrying out the PVD depositing treatment, controller 101 order vacuum pumping systems 44 are drawn into predetermined pressure/vacuum tightness with treatment chamber 10, so that plasma processing chamber 10 can receive substrate 12 from the system's automation (not shown) that is installed to same central transfer chamber (not shown) under vacuum environment.For substrate 12 is transferred to treatment chamber 10, the slit valve (element 46) that treatment chamber 10 and central transfer chamber sealing are opened is opened to allow system's automation to extend through access port 32 in the locular wall 41.Then promote pin 74 by promoting substrate, come to remove substrate 12 from the system's automation that extends from the automation supporting plate (not shown) that extends.System's automation cuts out from treatment chamber 10 withdrawals and slit valve 46 then, so that treatment chamber 10 and central transfer chamber is isolated.Then substrate holder 61 promotes substrate 12 and substrate 12 is moved to processing position desired under the target 24 from promoting pin 74.Then after realizing desired pressure of foundation, desired processing gas stream is injected in the treatment zone 15, and uses power supply 28 to apply bias voltage to produce plasma body in treatment zone 15 to target 24.Apply the DC bias voltage by power supply 28 and make in treatment zone 15 ionized gas bombardment target surface and therefore " sputter " atoms metal, these atoms metals drop on and are positioned on the substrate holder 61 lip-deep substrate surfaces.In the structure shown in Fig. 2 A, the electric current that applies the certain percentage that bias voltage produces will be by ground connection conductive member 91, and the plasma body that therefore allows to be produced distributes more equably in the entire treatment zone.It should be noted that term " ground connection " intention usually is described in conductive member 91 to the direct or indirect electrical connection between the anode surface in treatment chamber.In one aspect, by resistance, capacitive and/or inductive parts being incorporated into the circuit between conductive surface 91 and the anode surface, can be wittingly with conductive member 91 bias voltage under the electromotive force different with anode surface.Fig. 3 A illustrates the vertical sectional view of treatment zone 15 and conductive member 91, and it is intended to from conceptive diagram from target to the current path of ground connection conductive member 91.The advantage of adjustable anode assemblies 90 embodiment described herein is that owing to should reduce to the impedance in path, ground, adjustable anode assemblies 90 trends towards being reduced to the desired required target bias of sedimentation rate of realization.
Fig. 3 B illustrates the vertical sectional view of treatment zone 15, and it shows target 24 ( element 24A and 24B), conductive member 91 and is positioned at substrate 12 on the substrate holder 61.The effect of the target surface 24C of Fig. 3 B intention diagram ionized gas atom (herein be ar atmo) bombardment target material 24A, at described target surface 24C place's target atom (element " M ") from this surface with any direction sputter and be positioned substrate 12 formation film 11A on the substrate holder 61.Generally speaking, the target atom of institute's " sputter " (element " M ") leaves the target surface in direction-free mode (seeing arrow " A "), therefore the target atom (element M) of institute's sputter will be deposited on the substrate surface, thereby form film 11A thereon and form film 11B on conductive member 91.During treatment time and idle time, therefore the temperature of conductive member 91 will change considerably, may make the film 11B that is deposited on the conductive member 91 change the shape of conductive member 91 or make deposition material peel off and produce the particulate that can cause the device yield problem on (a plurality of) substrate of having handled.In one aspect, be head it off, can improve the mechanical adhesion power of deposited film by the surface of sandblast, chemical etching or other conventional art roughening conductive members 91 to conductive member 91.In one aspect, being coated with of aluminium arc spraying, flame plating or plasma spray coating can be deposited upon on the surface of conductive member 91 to improve the adhesive power of deposited film.
In yet another aspect, adjustable anode assemblies 90 is suitable for changing with conductive member new or that be not deposited 91 surfaces the part that has been deposited of conductive member 91 in treatment zone 15.This structure can help to minimize or remove the deposition ununiformity and by the caused particle issues of deposition material that applies (a plurality of) anode surface.The ability of reorientation conductive member 91 will reduce the chamber stop time that anode surface brought that is arranged in treatment zone by replacing, and this may be quite time-consuming and the expense cost.Following task causes quite a few of the chamber stop time that exists in the conventional process chamber by finishing: wait for that process chamber components is cooled to the temperature that it can be handled; chamber opening is destroyed vacuum; remove the anode surface that has used; new anode component is installed; the chamber is closed; pump is inhaled and baking chamber, and follows the treatment chamber that preparation is used to handle.Therefore, embodiment described herein does not carry out these tasks when not needing will change anode surface at every turn, and this has saved time and expense.
In one aspect, for carrying out the processing on conductive member 91 surfaces that reorientation exposed to the open air, adjustable anode assemblies 90 can comprise feed rolls assembly 96, material receiving roller assembly 95 and be connected to feed rolls assembly 96 and the conductive member 91 of material receiving roller assembly 95.Usually, by being formed on the first groove 50B the guard shield 50, transport conductive member 91 by treatment zone 15 like this with the second groove 50C (collecting conductive members by material receiving roller assembly 95) that is formed in the guard shield 50 from feed rolls assembly 96 then at this place.With reference to figure 6A, term " groove " (for example element 50B) intention of herein using is usually described slit, narrow opening, perforation, gap or the hole that a surface (element 50E) of guard shield is connected to another surface (50F) of guard shield.In yet another aspect, shown in Fig. 2 A, two alignment rollers 94 are positioned between the feed rolls assembly 96 and the first groove 50B and between the second groove 50C and the material receiving roller assembly 95, to support and directed conductive member 91 during through treatment zones 15 at conductive member 91.When during conductive member 91 is configured in processing with this, being deposited, controller 101 is adjusted the position of rotation of material receiving roller assemblies 95 and/or feed rolls assembly 96 so that the amount that is not deposited on the conductive member 91 moves in the treatment zone 15 and on the conductive member 91 the deposition region shift out treatment zone.
In one aspect, feed rolls assembly 96 and material receiving roller assembly 95 both all comprise usually and be suitable for the tension force on control (a plurality of) conductive member 91 and be controlled at moving in the treatment zone or the motion control component 116 (Fig. 4 A-C discussed below) of the processing of location conductive member 91, main shaft 92, seal assembly 98 (seeing element 98A-B among Fig. 4 A-B and the element 98 among Fig. 4 D) and rotary components 97 (seeing element 97A-B among Fig. 4 A-B and the element 97 among Fig. 4 D).
In one embodiment, controller 101 can be suitable for adjusting continuously the position of conductive member 91 during handling, and influence the possibility of the particulate performance of deposition uniformity on the substrate 12 or PVD processing to reduce deposited film.In yet another aspect, it is stable that conductive member 91 keeps during handling, and reorientation after each substrate deposition is handled.In yet another aspect, reorientation conductive member 91 after on conductive member 91 is arranged in the zone of treatment zone 15, carrying out repeatedly depositing treatment.For carrying out the task of the position of controlling conductive member 91, each all comprises motion control component 116 feed rolls member 96 and material receiving roller member 95, it can have the position of rotation tracking equipment such as encoder, and this equipment can be used in combination position, speed and the tension force when controlling conductive member 91 by treatment zone 15 with controller 101.
In one aspect, material receiving roller assembly 95 comprises motion control component 116, and feed rolls assembly 96 is spring loaded (for example torsion spring).Construct with this, feed rolls assembly 96 is suitable for conductive member 91 is remained under certain tension force, but allows position and the feeding speed of material receiving roller assembly 95 control conductive members 91 in treatment zone 15.
The problem that Fig. 3 C intention diagram that is similar to Fig. 3 B is caused by the position of (a plurality of) anode surface in treatment zone 15 (being conductive member 91 in this case).In one case, if the too close substrates 12 of conductive member 91, conductive member 91 surface that may be tending towards covering substrate is not accepted from the material of target surface sputtering so, causes pit 11C like this in being formed at substrate 12 lip-deep film 11A.Because this problem may cause the defective that homogeneity is relevant in film 11A, cover influence with respect to the position of substrate surface to reduce it so can optimize conductive member 91.Conductive member 91 can change according to the distance between the gaseous tension in the treatment zone 15, sputter process power and substrate 12 and the target surface 24C to the optimization distance on substrate 12 surfaces.Generally speaking, conductive member can be placed on about half way place between target and the substrate.For example, be under the situation of 200mm to the target spacing at substrate, can place conductive member in the distance of the about 100mm of distance target.In one aspect, conductive member 91 is placed at the fixed range place between the distance target surface about 70mm of 24C and about 130mm.
With reference to figure 3D, in one aspect, the shape that can change conductive member 91 is to reduce the influence of covering on 91 pairs of substrate 12 surfaces of conductive member.Fig. 3 D illustrates an embodiment of conductive member 91, and it has oval cross section to reduce the influence of covering of 91 pairs of substrates of conductive member, 12 lip-deep deposited film 11A.Because the tension stress or the stress that form in the deposited film, avette nose circle is favourable for the peeling off of film 11B that prevents to be deposited on the conductive member 91.In other aspects of the present invention, the cross section of conductive member 91 can form the surface-area that increases anode surface and/or reduce the influence of covering of conductive member 91.
Though Fig. 3 A-D illustrates the conductive member 91 of circular and oval cross section, but in other embodiments of the invention, conductive member 91 can have the cross section of square, rectangle, trilateral, star or other favourable geometrical shapies, and not different with base region of the present invention.An aspect therein, the cross section of conductive member are circular and have diameter between about 0.5mm and about 12.0mm.
Fig. 4 A illustrates the sectional view of bowing of an embodiment of treatment chamber 10, and its cutting plane is positioned in the treatment zone 15, under the target 24 but on conductive member 91.Fig. 4 A illustrates an embodiment with three conductive members 91 that pass treatment zone 15.In one aspect, the quantity of passing the conductive member of treatment zone 15 depends on desired process uniformity, cost and the desired complexity that application allowed, can be between about 1 and about 130.Preferably, pass treatment zone 15 conductive member 91 quantity about 2 and about 10 conductive members between.
It should be noted that the sectional area and the material that are used to form conductive member 91 can be very important, bear during handling ability the high temperature of experience (for example resistance heat and with the interaction of plasma body) because it will influence conductive member.The quantity of conductive member 91 and its expose the total surface area of surface-area in treatment zone 15 or adjustable anode assemblies 90 to the open air also can be very important, because it will be to having the amount of influence by the magnitude of current of each conductive member 91 carrying and the top temperature that is therefore obtained by each conductive member 91 during handling.The total surface area of adjustable anode assemblies 90 can be multiply by the girth around the conductive member cross section by the length of conductive member in the treatment zone 91, multiply by the quantity that is positioned at the conductive member in the treatment zone again and defines.Because the length of conductive member can change with substrate dimension, so usefully each conductive member is described the parameter that is called " per surface area " usually, it is the perimeter of section of each conductive member 91 per unit length.For example, for the circular conductive member of 5.0mm diameter, per surface area is about 15.708mm 2(π * D/1mm) for example, and therefore for the long conductive member of single 2000mm, surface-area will be about 31 to/mm, 416mm 2Therefore, be 5.0mm and the treatment chamber 10 that is the long conductive member of 2000mm for having three diameters, total conductive member 91 surface-area will be about 94,248mm 2In one aspect of the invention, the per surface area of each conductive member 91 is at about 1.5mm 2/ mm and about 75mm 2Between/the mm.In one aspect, the section area of conductive member 91 can be at about 0.2mm 2With 125mm 2Between change.In one example, for the substrate that is of a size of 1800mm * 1500mm, the surface-area of conductive member 91 can be about 6.0m 2In one aspect, determine the sectional area size of conductive member 91, be sent to the electric current of conductive member 91 with carrying from the plasma body that produces by target bias.In one example, the total current that can be carried by whole conductive members is about 1000 amperes.
In the structure shown in Fig. 4 A, the conductive member 91 wrapped main shafts 92 that are contained in single material receiving roller assembly 95 and the single feed rolls assembly 96 twine.Therefore conductive member 91 is supplied to by the first groove 50B that is formed on the guard shield 50 from feed rolls assembly 96, through the substrate 12 that being positioned on substrate holder 61 (not shown) from the top, and then leave treatment zone 15, and received by material receiving roller assembly 95 at this place by the second groove 50C that is formed in the guard shield 50.Generally speaking, material receiving roller assembly 95 and feed rolls assembly 96 are positioned at down in the vacuum area 16 to prevent that material from depositing thereon during handling, and this deposition may influence the reliability and the particulate performance of treatment chamber 10.The first groove 50B and the second groove 50C are made into certain size usually and prevent that plasma body from leaking and prevent that sputter material is deposited on down on the parts that retain the vacuum area 16 from treatment zone 15.In one aspect of the invention, be formed on groove 50B in the guard shield 50 and the aspect ratio (being diameter and/or length) of 50C and be formed certain size to prevent the leakage of plasma body and deposition material.In yet another aspect, groove 50B and 50C have the feature of covering (not shown), and it has produced circuitous path, and wherein sputter material must detach treatment zone 15 by it.
Fig. 4 B illustrates the sectional view of bowing of the treatment chamber 10 that is similar to view shown in Fig. 4 A, and it comprises having the conductive member 91 of additional intersecting members 91B with the surface-area that increases adjustable anode assemblies 90.Like this, conductive member 91 can be a traverse net, and it comprises conductive member 91A with desired spacing and intersecting members 91B to increase the surface-area of adjustable anode assemblies 90.In this structure, conductive member 91A and intersecting members 91B can be transported to treatment zone 15 or transport from treatment zone 15 by being formed on groove 50D in the guard shield 50.In one aspect, main shaft 92 windings of conductive member 91 in feed rolls assembly 96 and material receiving roller assembly 95 that have element 91A and 91B.Any potential difference that this structure passes between each dispersive conductive member 91 of treatment zone 15 for reduction is favourable, can improve the plasma density homogeneity and improves deposition uniformity thereby reduce potential difference.
In one aspect, shown in Fig. 4 C, two groups of adjustable anode assemblies 90 ( element 90A and 90B) are oriented the conductive member 91 that makes in each adjustable anode assemblies 90 with certain relative to each other angular relation orientation, and one group of conductive member 91 is sentenced interference between the conductive member 91 that prevents in the adjustable anode assemblies of difference in the different distance of distance target surface 24C.For example, three conductive members 91 among the first adjustable anode assemblies 90A can be oriented on the first direction and be positioned at apart from target first distance, and the second adjustable anode assemblies 90B with four conductive members 91 be positioned at the orthogonal second direction of first direction on and with target at interval greater than the second distance of first distance.In one aspect, two groups of adjustable anode assemblies 90 ( element 90A and 90B) comprise material receiving roller assembly 95 (element 95A-B), feed rolls assembly 96 (element 96A-B) and conductive member 91.Like this, anode region can more be evenly distributed in entire treatment zone 15, and this can be very important when use is shaped as orthogonal big area substrate.In one aspect, the potential difference of each is adjustable anode assemblies 90 ( element 90A and 90B) can change by adjusting its electrical characteristic (for example impedance) to (a plurality of) path on ground, and this may be favourable to the adjustment process uniformity.
Fig. 4 D illustrates the sectional view of an embodiment of the motion control component 116 that is suitable for live spindle 92 and therefore adjusts position, tension force and the speed of conductive member 91 through treatment zone 15 time.Generally speaking, motion control component 116 comprises seal assembly 98 and electric machine assembly 97.Seal assembly 98 comprises axle 113, mounting plate 115 and at least one sealing member 112 that is coupled to electric machine assembly 97 and main shaft 92 usually.In this structure, rotatablely moving of electric machine assembly 97 is transferred to main shaft 92, and the vacuum pressure it is delivered to time vacuum area 16 with the normal atmosphere of main shaft 92 junctions outside locular wall 41 in.In one aspect, shown in Fig. 4 D, sealing member 112 is to be suitable for allowing axle 113 rotations and air conservation thing to leak into two lip seals ( element 112A and 112B) in the treatment chamber.In one aspect, may need pump differentially to inhale zone between two sealing members of (not shown) and reduce pressure drop across single sealing ( element 112A or 112B).In one aspect of the invention, sealing member 112 is traditional flowing molten iron body sealing member (ferrofluidic seal) (for example, can buying from the Schoonover company limited of the Canton of Georgia) or the magnetic coupled feedthrough spare (feedthrough) that is used for being delivered to rotatablely moving the parts under the vacuum environment well known in the art.Therefore, by use sealing member 112 and be formed on plate 115 and locular wall 41 between o type annular seal 114, can enter down vacuum area 16 and treatment zone 15 by the air conservation thing.
Actuator 97 comprises actuator 117 usually, be used for that motor is attached to the mounting bracket 111 of seal assembly 98 and actuator 117 is attached to the motor male part 110 of axle 113.In one aspect, the tension force of the output shaft of actuator 117 by such as the torsion spring (not shown) keeps device coupled to axle 113, makes stable power and tension force to be applied to be clamped in conductive member 91 on both main shafts 92 of material receiving roller assembly 95 and feed rolls assembly 96.In one aspect, the rotation electricity feedthrough component 118 such as slip ring or rotation mercury feedthrough component be electrically connected to main shaft 92 with allow electric current from conductive member 91 by main shaft 92, axle 113, motor shaft 117A with rotate electric feedthrough component 118 and flow to ground connection connection.In one aspect, actuator 117 can be DC servomotor known in the field or stepper-motor.
The design of magnetron that is used to handle
Fig. 5 A illustrates one embodiment of the present of invention, and it shows the enlarged view of target surface 24C and a plurality of magnetron assembly 23 (three for example).In this structure of treatment chamber 10, have a plurality of magnetron assemblies 23 (element 23A-B) that comprise one or more magnets 27.Usually, for the utilization ratio that improves target material and improve deposition uniformity, often by using magnetron actuator (not shown), translation on the direction that is parallel to target surface 24C, scanning and/or rotating magnetron assembly.Generally speaking, during the PVD depositing treatment, owing to surround the magnetic field (element " B ") of the electronics that exists in the treatment zone 15, a big chunk of the plasma body that is produced in the treatment zone 15 forms and remains under the magnetron assembly 23.So because the intensity and the direction in the magnetic field that magnetron assembly 23 is produced, the shape and the homogeneity of 23 pairs of PVD settled layers of magnetron assembly are influential.
In an embodiment of treatment chamber 10, design of magnetron can be arranged such that magnetron assembly 23 produces higher magneticstrength in the center of target than the edge at target, to offset at the edge of target 24 and the impedance contrast that arrives the preferred path on ground in the center of target 24.In yet another aspect, the speed of translation, scanning or rotation by being crossed the magnet on target surface with respect to the physical location adjustment at target edge by magnet (for example, in the center lower speed and in the higher speed of edge), in target, keep the magneticstrength of higher time per unit in the heart.By placing extra stronger permanent magnet near the center of using stronger magnet the center of magnetron, improving magnetron on than the magnet density of edge, center or when the dorsal part of target is crossed in the magnetron translation, being increased in, can produce stronger magnetic field to the mobile residence time on the center of target at target.Fig. 5 A illustrates three magnetrons center (element 23A) and edge (element 23B) that are positioned at target 24.The patent application of submitting on June 7th, 2,004 10/863,152[AMAT 8841] (U.S. Provisional Patent Application of submitting on January 7th, 2,004 60/534 is enjoyed in requirement, 952 right) further described in and be suitable for making the translation mechanism of describing that the present invention is benefited, as to be used for mobile magnetron and magnetron assembly magnet orientation herein, its content is contained in this by not quoting with the inconsistent degree integral body of require invention.It should be noted that the optimization magnetic field profile that is used for treatment chamber 10 will be crossed motion, the sedimentation rate of target surface and the change of the material type that just is being deposited and changing to substrate spacing, processing pressure, magnetron along with the area ratio of the size of each substrate, anode (for example earthed surface) anticathode (for example target), target.
But,, can on the big area substrate, realize more uniform deposition profile by adjusting magnetron shape, magnetic density and crossing the scanning profile of target.Fig. 5 B illustrates an embodiment of treatment chamber 10 shown in Fig. 2 A, and it has and comprises that a plurality of magnetron assemblies 23 (element 23A-B) cross the magnetron assembly of the magnetic densities that target 24 surface produces with optimization.
23 pairs of minimizing centers of magnetron are subjected to the influence of the magnetic permeability of target material to the effect of the deposition thickness inaccuracy at edge.Therefore, may adjust magnetron magnetic field pattern based on (multiple) target 24 type of material and thickness thereof under certain conditions.And, therefore control center is restricted to the effect in the magnetron magnetic field of the optimization at edge in some cases, and need be used in combination one or more adjustable anode assemblies 90 and/or the embodiment that electrically contacts with settled layer (will in following discussion) realizes desired process uniformity.
To electrically contacting of settled layer
Fig. 6 A-C illustrates an embodiment of treatment chamber 10, and wherein the shadow frame 52 of ground connection is suitable for contacting with settled layer 11 on the substrate 12, makes settled layer 11 serve as anode surface.Therefore this structure is by settled layer 11 being used as the anode surface area during anode surface has increased processing, to improve the homogeneity of treatment zone ionic medium body.Fig. 6 A illustrates an embodiment, wherein when bearing 61 contacts with the shadow frame 52 of ground connection with substrate 12, uses conductive features body 52A settled layer 11 next and on the substrate 12 to contact, and described substrate 12 is positioned on the substrate holder 61.In one aspect, shadow frame 52 is directly connected to guard shield 50 by using conduction bands or lead (the element 52D among Fig. 6 A).In one aspect, adjustable anode assemblies 90 and have the first groove 50B and the processing guard shield 50 of the second groove 50C has been increased to treatment chamber 10 (shown in Fig. 5 A) alternatively is with further increase anode surface area.Treatment chamber 10 shown in Fig. 6 A-C is similar to the chamber shown in Fig. 2 A, therefore for the clear use similar components label that continues.
In one embodiment, conductive features body 52A is attached to the surface of shadow frame 52, and by using piece 52B to be clamped in the appropriate location.In one aspect, piece 52B makes conductive features body 52A and shadow frame 52 electrically contact by using a plurality of screws or fastening piece (not shown) with the downside that conductive features body 52A is clamped to shadow frame.In Fig. 6 A-B, conductive features body 52A is shown under its uncompressed state, and this state takes place when substrate surface does not contact with conductive features body 52A.Conductive features body 52A is shown under its compressed state in Fig. 6 C, make its can be deposited on substrate 12 lip-deep films 11 and electrically contact.Generally speaking, conductive features body 52A can make by being suitable for transmitting thin slice, paper tinsel or the rod of electro-conductive material that is transferred to the electric current of conducting film 11 (Fig. 6 A) from the plasma body that is produced.In one aspect, conductive features body 52A is physically minimized occupying on the substrate surface, with the zone amount that reduces to waste on edges of substrate.In one aspect, conductive features body 52A can maybe can be used to form the other materials that electrically contacts by the metal such as titanium, stainless steel, copper, platinum, gold, brass, Hastelloy C and makes.
Fig. 6 D illustrate can be used for by be formed on the embodiment that conductive layer 11 (Fig. 6 A) on the substrate surface electrically contacts the serial of methods step 200 that improves deposition uniformity.Depositing treatment can comprise following steps usually: substrate is inserted into step 201 in the treatment chamber, substrate orientation is handled locational step 203 first, deposit the step 205 of first conducting film, substrate orientation is handled the step 207 of position and the step 209 of depositing electrically conductive film second.In other embodiments, the order of method steps 200 can reset, change, and can remove one or more steps, perhaps two or more steps is combined into single step, and not different with base region of the present invention.
With reference to figure 6B and 6D, when controller 101 order vacuum pumping systems 44 are drawn into predetermined pressure/vacuum tightness with treatment chamber 10, so that plasma processing chamber 10 can be when being installed to usually that also system's automation (not shown) of the central transfer chamber (not shown) under vacuum receives substrate 12, finish that substrate is inserted into step 201 in the treatment chamber.For substrate 12 is transferred to treatment chamber, the slit valve (element 46) that treatment chamber 10 and central transfer chamber sealing are opened is opened to allow system's automation to extend through access port 32 in the locular wall 41.Then promoting pin 74 to remove substrate 12 from the system's automation that extends by promoting substrate from the automation supporting plate (not shown) that has extended.Then system's automation cuts out so that treatment chamber 10 and central transfer chamber is isolated from treatment chamber 10 withdrawals and slit valve 46.Substrate holder 61 promotes substrate 12 and substrate 12 is moved to desired position from promoting pin 74 then.
In step 203, or substrate orientation handled locational step 203 first, substrate 12 location substrate holders 61 thereon move to desired first under the target 24 and handle the position.In this case, the first processing position (seeing Fig. 6 B) is such position, wherein substrate is placed near the ground connection shadow frame 52, to cover the substrate holder surface 61A that in next method steps 205 sedimentary film is avoided the raised zones (the element 12B among Fig. 6 A) of coated substrate and dorsal part (the element 12C among Fig. 6 A) and exposed to the open air.The first processing position also is that ground connection shadow frame 52 is positioned on the substrate surface and the position that does not electrically contact with it.
The step 205 that deposits first conducting film comprises the treatment step of conductive layer deposition on the substrate surface that is positioned at the first processing position (step 203).In one aspect, depositing treatment requires sputter conductive layer on substrate surface, this surface is thick in being enough to form the successive layers that enough current delivery can be arrived the ground connection carriage at final deposition step (for example step 209), makes the plasma body that is produced more be formed uniformly in treatment zone 15.In one aspect, conducting film can be at about 10 dusts
Figure A20051011524600231
With about 1000 dusts Between.In one example, carry out the molybdenum depositing treatment with the processing pressure of the deposition power of about 200kW and about 2.5 millitorrs (mT) and obtained about 383 dusts in about 10 seconds
Figure A20051011524600241
Thickness.The thickness that promotes homogeneous plasma to produce the first required conductive layer can change according to the electroconductibility of deposited film.Can include but not limited to by sedimentary typical film in this step: copper, aluminium, aluminum-copper alloy, aluminium neodymium alloy, tantalum, tantalum nitride, tungsten, cobalt, ruthenium, gold, titanium, titanium nitride, molybdenum and other combinations and alloy.
In step 207, or with the step 207 of substrate orientation in the second processing position, substrate 12 location substrate holders 61 thereon move to the second desired processing position (Fig. 6 C) under the 24C of target surface.The second processing position is such position in the case, and wherein substrate holder 61 is arranged as with ground connection shadow frame 52 with 52 cooperations of ground connection shadow frame and substrate 12 and contacts.Second to handle the position be position when sedimentary film is deposited on the surface of substrate 12 equably during final deposition step (for example step 209).Actual second handles the position will depend on employed parameter during depositing treatment and change, and described parameter generally includes substrate mobile during spacing, depositing treatment pressure, (a plurality of) depositing treatment power setting and the magnetron type and the processing of target.
Final step or the step 209 that deposits second conductive film layer be used for second conductive layer deposition on substrate surface to obtain required film thickness.In one example, carry out the molybdenum depositing treatment with the processing pressure of the deposition power of about 200kW and about 2.5mT and obtained about 2,300 dusts in about 60 seconds
Figure A20051011524600242
Thickness.Second conductive film layer does not need accurately the same with first conductive film layer, and therefore can use or not use reactive sputtering processing known in the field (for example TaN, TiN) to form.After step 209 is finished, then will remove substrate from treatment chamber by then returning step 201 usually.
Fig. 6 E illustrate can be used for by be formed on the embodiment that conductive layer 11 (Fig. 6 A) on the substrate surface electrically contacts the serial of methods step 210 that improves deposition uniformity.Except having increased additional step 206, the depositing treatment shown in Fig. 6 E is identical with the method steps shown in Fig. 6 D.In other embodiments, the order of method steps 210 can reset, change, and can remove one or more steps, perhaps two or more steps is combined into single step, and not different with base region of the present invention.
Method steps 206 or are such steps from the step 206 that substrate is removed residual charge is used for being present in the residual charge discharge of substrate, prevents to be arranged to arc-over when contacting with ground connection shadow frame 52 when substrate.Can form residual charge in the substrate that electricity suspends during plasma treatment or certain other charge generation processing.The interaction of (or the substrate holder 61 that suspends) and the plasma body that during the step 205 of deposition first conducting film or other treatment steps formerly, forms because substrate surface, electric charge that can formation is kept in substrate 12 (or the substrate holder 16 that suspends).The rapid discharge of captive electric charge can cause arc-over and damage the device that forms on the substrate surface.Therefore, for preventing equipment damage, the step 206 of removing residual charge is added in the described method steps of Fig. 6 D.Generally speaking,, promptly reduce shadow frame 52 and be formed on potential difference between the lip-deep film 11 of substrate, remove the step 206 of the residual charge in the substrate by reducing potential difference therebetween before electrically contacting at ground connection shadow frame 52 and substrate 12.
In one aspect, for reducing potential difference, ground connection shadow frame 52 and substrate holder are designed to like this, and promptly ground connection shadow frame 52 electrically contacts (Fig. 6 G) before electrically contacting the film 11 that is formed on the substrate 12 in ground connection shadow frame 52 with substrate holder 61.By making shadow frame 52 contact substrate holder 61 before contact substrate 12, any residual charge in the substrate holder 61 that can dissipate is to prevent the arc-over by substrate 12.For carrying out this task, ground connection shadow frame 52 or substrate holder 61 can comprise power spring 52E (Fig. 6 G), to allow exposing the surperficial 61A of substrate holder to the open air what ground connection shadow frame 52 and ground connection shadow frame 52 before substrate 12 contact contacted substrate holders 61.
In yet another aspect, can come performing step 206 by shadow frame 52 and ground are insulated and then makes shadow frame 52 electrically contact (described earthed surface can electrically contact shadow frame 52 before shadow frame 52 electrically contacts the film 11 that is formed on the substrate 12) with the substrate holder 61 with earthed surface.By physically preventing two contacts between the parts, shadow frame 52 can insulate with anode surface (for example guard shield 50).In one aspect, isolator 53 (seeing Fig. 6 F) can be used for shadow frame 52 and guard shield 50 insulation.By shadow frame 52 is contacted with substrate holder 61 before the substrate 12 in contact, allow any residual charge in the substrate holder 61 to discharge to prevent arc-over by substrate 12.For carrying out this task, above-mentioned power spring 52C (Fig. 6 G) can be used to carry out this task.
In yet another aspect, can be by shadow frame 52 and ground are insulated (being its electricity " suspension "), and then before shadow frame 52 electrically contacts the film 11 that is formed on the substrate 12, shadow frame 52 is electrically coupled to substrate holder 61 and substrate 12, and carry out removing the step 206 of residual charge from substrate.In one aspect, for carrying out this step, before shadow frame 52 contacts that suspend were formed on the lip-deep film 11 of substrate 12, substrate holder 61 was RF biasings.In this structure, substrate holder 61 can comprise biased element (the element 61B among Fig. 6 A), these biased elements can use RF power supply 67 and be connected to the RF coupling device (shown in Fig. 6 A) of biased element, and the shadow frame 52 that is used for suspending capacitively is coupled with substrate 12 and substrate holder 61.By the RF generation plasma body that the RF biasing of using by substrate holder 61 forms, the shadow frame 52 of suspension can reach identical electromotive force with substrate 12 before it contacts with one another in step 207.In one aspect, RF biasing can be with the RF frequency of 13.56MHz between about 100 watts to about 6000 watts, and before the performing step 207 with performing step 207 during, will be applied to substrate at the chamber pressure between about 1.0mT under the rich argon environment and the about 6.0mT.
Fig. 6 F is the isometric cutaway view such as grade that conductive features body 52A is installed to an embodiment of the shadow frame 52 on its downside.In this structure, conductive member 52A comprises a plurality of conductive finger part 52C that are formed in the conductive member 52, to allow can repeat and contact equably the lip-deep conducting film 11 that is formed on substrate 12.In one aspect, conductive finger part 52C can be the part of the single serialgram that always contacts around substrate 12.In yet another aspect, a plurality of parts of disperseing of conductive features body 52A can be placed around the downside of shadow frame 52, and therefore do not need single unitary piece of material to form conductive features body 52A.
Though preamble points to embodiments of the invention, can design of the present invention other and not depart from its base region, and its scope is indicated in the appended claims with further embodiment.

Claims (19)

1. one kind is used for the plasma treatment chamber component that will be deposited upon on the substrate, comprising:
Plasma processing chamber with treatment zone;
Target, described target are positioned at and make the surface of described target contact with described treatment zone on the described plasma processing chamber;
Be positioned at the indoor anode shield of described plasma treatment, the surface of wherein said anode shield contacts with described treatment zone;
It is indoor and have the substrate holder of substrate receiving surface to be positioned at described plasma treatment, and the surface that wherein is positioned at the substrate on the described substrate receiving surface contacts with described treatment zone; With
Has the second anode member that is positioned at the first surface in the described treatment zone and is positioned at the outer second surface of described treatment zone, wherein, described first surface can be removed and described second surface can be positioned in the described treatment zone from described treatment zone by using actuator.
2. plasma treatment chamber component as claimed in claim 1, the surface-area on the described surface that contacts with described treatment zone of wherein said substrate is at least 19,500mm 2
3. plasma treatment chamber component as claimed in claim 1 also comprises:
It is outer and be connected to the feed rolls assembly of described second anode member to be positioned at described treatment zone; With
It is outer and be connected to the material receiving roller assembly of described second anode member to be positioned at described treatment zone.
4. plasma treatment chamber component as claimed in claim 1, wherein said second anode member is lead, Stranded cable, metal strip, sheet or traverse net.
5. plasma treatment chamber component as claimed in claim 4, wherein said second anode member is made by the metal of selecting from following group: titanium, aluminium, platinum, gold and silver, copper, magnesium, manganese, stainless steel, Hastelloy C, nickel, tungsten, tantalum, iridium or ruthenium.
6. plasma treatment chamber component as claimed in claim 1, the cross section of wherein said second anode member are avette, oval, circular, square, rectangle, star or leg-of-mutton.
7. plasma treatment chamber component as claimed in claim 1, comprise also roughly and the magnetron assembly of the surperficial adjacent positioned of described target that wherein said magnetron assembly is suitable for having stronger magneticstrength than near the edge at described target near the center of described target.
8. one kind is used for the plasma treatment chamber component that will be deposited upon on the substrate, comprising:
Plasma processing chamber with treatment zone;
Target, described target are positioned at and make the surface of described target contact with described treatment zone on the described plasma processing chamber;
Be positioned at the indoor anode shield of described plasma treatment, wherein said anode shield comprises:
One or more walls around described treatment zone;
Form first groove by one of described one or more walls; With
Form second groove by one of described one or more walls;
It is indoor and have the substrate holder of substrate receiving surface to be positioned at described plasma treatment, and the surface that wherein is positioned at the substrate on the described substrate receiving surface contacts with described treatment zone; With
One or more adjustable anode assemblies comprise:
Extend through described first groove and described second groove and have the second anode member on the surface that contacts with described treatment zone;
It is outer and be connected to the feed rolls assembly of described second anode member to be positioned at described treatment zone; With
It is outer and be connected to the material receiving roller assembly of described second anode member to be positioned at described treatment zone, and wherein said feed rolls assembly and described material receiving roller assembly are suitable for adjusting synergistically the position on the described surface of described second anode member in described treatment zone.
9. plasma treatment chamber component as claimed in claim 8, wherein said second anode member is lead, Stranded cable, metal strip, sheet or traverse net.
10. plasma treatment chamber component as claimed in claim 9, wherein said second anode member is made by the metal of selecting from following group: titanium, aluminium, platinum, gold and silver, copper, magnesium, manganese, stainless steel, Hastelloy C, nickel, tungsten, tantalum, iridium or ruthenium.
11. plasma treatment chamber component as claimed in claim 8, the cross section of wherein said second anode member are avette, oval, circular, square, rectangle, star or leg-of-mutton.
12. one kind is used for the plasma treatment chamber component that will be deposited upon on the substrate, comprises:
Plasma processing chamber with treatment zone;
Target, described target are positioned at and make the surface of described target contact with described treatment zone on the described plasma processing chamber;
Be positioned at the indoor anode shield of described plasma treatment, the surface of wherein said anode shield contacts with described treatment zone;
Have the substrate holder that is positioned at the indoor substrate receiving surface of described plasma treatment, the substrate that wherein is positioned on the described substrate receiving surface contacts with described treatment zone; With
Have the surface that contacts with described treatment zone and have shadow frame with the conductive features body of described anode shield electric connection, wherein said conductive features body is suitable for contacting the metal level that is formed on the substrate, and described substrate orientation is on described substrate receiving surface.
13. plasma treatment chamber component as claimed in claim 12, also comprise having the second anode member that is positioned at the first surface in the described treatment zone and is positioned at the outer second surface of described treatment zone, wherein described first surface can be removed and described second surface can be positioned in the described treatment zone from described treatment zone.
14. plasma treatment chamber component as claimed in claim 12, the surface-area on the described surface that contacts with described treatment zone of wherein said substrate is at least 19,500mm 2
15. plasma treatment chamber component as claimed in claim 12, also comprise having the second anode member that is positioned at the first surface in the described treatment zone and is positioned at the outer second surface of described treatment zone, wherein described first surface can be removed and described second surface can be positioned in the described treatment zone from described treatment zone.
16. one kind with the method for thin film deposition on substrate, comprising:
Substrate is placed on the substrate holder in the treatment zone that is installed on treatment chamber;
On the first processing position of described substrate orientation in the described treatment zone of plasma processing chamber;
To be deposited on the surface that is positioned at the described substrate on the described substrate holder;
On the second processing position of described substrate orientation in the described treatment zone of described plasma processing chamber, wherein described substrate orientation being handled locational step described second comprises that the described lip-deep layer that will be deposited on described substrate is placed as with shadow frame and electrically contacts the anode surface electric connection in described shadow frame and the described plasma processing chamber; With
To be deposited on the described surface of the described substrate that is positioned on the described substrate holder.
17. the lip-deep method with the substrate of thin film deposition in being positioned the treatment zone of plasma processing chamber comprises:
To be deposited to the surface of conductive member and be positioned on the surface of the substrate on the substrate holder;
Be in pressure below atmospheric pressure following time at described plasma processing chamber, in described treatment zone, the described surface of wherein said conductive member once was positioned at outside the described treatment zone before in being positioned at described treatment zone with the surface alignment of described conductive member.
18. method as claimed in claim 17 wherein when carrying out the lip-deep described step will be deposited to conductive member, is carried out the described step on the surface of the described conductive member in location.
19. one kind with the method for thin film deposition on substrate, comprising:
To be deposited to the first surface of conductive member and be positioned on the surface of first substrate on the substrate holder, described substrate holder be positioned in the treatment zone of plasma processing chamber;
By using one or more actuators, remove the described first surface of described conductive member and the second surface of described conductive member is positioned at the described treatment zone from described treatment zone, wherein be in less than atmospheric pressure following time, finish the described step of the described second surface of described step and location that removes described first surface at described treatment zone;
Remove described first substrate from described plasma processing chamber; With
With the second layer deposit to described conductive member described second surface and be positioned on the surface of second substrate on the described substrate holder, described substrate holder is positioned in the described treatment zone of described plasma processing chamber.
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KR20070008369A (en) 2007-01-17
US20070012558A1 (en) 2007-01-18
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