JP2003342724A - Reactive film deposition apparatus and reactive film deposition method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a reactive film deposition apparatus and a reactive film deposition method for reliably suppressing or eliminating any anode loss phenomenon. <P>SOLUTION: An anode reproducing mechanism 13 is provided to deposit a conductive film on an anode 12. <P>COPYRIGHT: (C)2004,JPO

Description

Detailed Description of the Invention

[0001]

TECHNICAL FIELD The present invention relates to a reactive film forming apparatus such as a sputtering method and a reactive film forming method.

[0002]

2. Description of the Related Art As a well-known sputtering method for forming various dense thin films on an object to be formed, there is a magnetron sputtering method which can easily obtain a high plasma density under a low pressure. This magnetron sputtering method is often adopted. FIG. 10 shows an example of a reactive film forming apparatus 100 that performs this magnetron sputtering method.

The reactive film forming apparatus 100 shown in FIG.
Is the cathode 10 near the upper ceiling in the chamber 101.
2 is provided, and the cathode 102 itself also serves as a conductive target. A central magnet 103 and a peripheral magnet 104 are provided on the back side (upper side) of the cathode 102 so as to be concentrically arranged. Then, the ground shield cover 105 is provided so as to entirely surround the outer peripheral portion of the cathode 102 and the outer peripheral portions of the magnets 103 and 104.
Is provided. Also, this ground shield cover 10
A first shower ring 107 is provided so as to surround 5 and an inert gas such as argon gas can be ejected from the first shower ring 107 toward a region below the cathode 102.

A carrier 108 for the film-forming target W is provided at a position separated from the cathode 102 (target) by a predetermined distance, and the film-forming target W is placed on the carrier 108. In the chamber 101, a mask 109 is provided between the cathode 102 (target) and the film formation target W, and the reactive film formation region Z is formed by the mask 109.
Are limited. A second shower ring 110 is provided between the mask 109 and the film-forming target W so as to surround the reactive film-forming region Z limited by the mask 109. Ring 1
Reactive gases such as oxygen and nitrogen can be ejected from 10.

The inner wall of the chamber 101, the outer surface of the ground shield cover 105 and the like act as an anode. The mask 109, the carrier 108, and the like can also act as an anode by grounding. In the reactive film forming apparatus 100 having such a configuration, for example, the cathode 102 (target) is made of conductive Si, the inside of the chamber 101 is evacuated, and then an inert gas such as argon gas is supplied from the first shower ring 107. Reactive gases such as oxygen and nitrogen are ejected from the second shower ring 110, and a DC (direct current) power supply 112 is applied between the inner wall of the chamber 101 and the outer surface (that is, the anode) of the ground shield cover 105 and the cathode 102. D
C voltage is applied.

Then, glow discharge occurs in the inert gas atmosphere in the chamber 101, and the positive ions ionized by the plasmaization of the inert gas collide with the cathode 102 (that is, the target).
A sputtering phenomenon occurs on the surface of, and as a result, sputtered particles are evaporated. The sputtered particles thus scattered are deposited on the film-forming target W to form SiO ₂ , SiOx.
An insulating film such as Ny or Si ₃ N ₄ is formed. By the way, when the thin film formed on the film-forming target W is used as an electrical insulating film as described above, sputtered particles scattered from the cathode 102 are deposited on other than the film-forming target W to form an insulating film. I had to do it. That is, the chamber 10
1 inner wall, the outer surface of the ground shield cover 105, the mask 1
An insulating film is also formed on 09, the carrier 108, and the like.

Therefore, the so-called anode disappearance phenomenon occurs in which the inner wall of the chamber 101, the outer surface of the ground shield cover 105, the mask 109, the carrier 108 and the like do not function as an anode. This phenomenon of disappearing the anode eventually leads to plasma extinguishing, but by the time it reaches there, destabilization of the plasma state may cause deterioration of the electron temperature, plasma density, etc., leading to deterioration of the film formation state and film formation defects. Will be invited. Conventionally, in order to prevent the disappearance phenomenon of the anode, the mask 1
09 is further provided between the film W and the film-forming target W (see Japanese Patent Laid-Open No. 60-155673), or a groove is formed in the anode to make it difficult for the insulating film to adhere (Japanese Patent Laid-Open No. 2001-2001).
Japanese Patent No. 164360) has been proposed.

[0008]

Among the conventional measures for extending the life of the anode, in the method of further providing the anode between the mask 109 and the film-forming target W, the mask 10 is originally required.
Although there is almost no adhesion of the insulating film on the surface of the film 9 facing the film-forming target W side, by providing the anode here, this surface is rather exposed to the scattered sputtered particles. Therefore, as a result, even on the surface of the mask 109 facing the film formation target W side, it is inevitable that the anode disappearance phenomenon will occur eventually.

On the other hand, even if a method of forming a groove in the anode to make it difficult for the insulating film to adhere, even if the insulating film formation can be delayed by the amount of increase in the surface area of the anode,
This degree was very small, and an insulating film was formed in the groove, and the phenomenon of disappearing the anode was inevitable. The present invention has been made in view of the above circumstances, and an object thereof is to provide a reactive film forming apparatus and a reactive film forming method capable of surely suppressing or eliminating the anode disappearance phenomenon. To do.

[0010]

In order to achieve the above object, the present invention takes the following means. That is, the reactive film forming apparatus according to the present invention introduces a reaction gas and an inert gas into a chamber provided with an anode and a cathode on which a conductive target is arranged, and while the reaction gas and the inert gas are introduced into the chamber, A DC regeneration is performed between the targets to form an insulating film on a film-forming object arranged at a predetermined position from the target, and an anode regeneration mechanism for forming a conductive film on the anode is provided. It is what

Since the anode regenerating mechanism is provided in this manner, the anode keeps its conductivity for a long time. Therefore, the phenomenon of disappearance of the anode can be prevented or suppressed to a state where it hardly causes a problem. In such an anode regeneration mechanism, a shield body is provided between the anode and the cathode, and a relative position between the anode and the cathode and the shield body is set to a reaction state where film formation proceeds and a regeneration state where film formation does not occur. A structure for enabling switching is added, and a conductive film may be formed on the anode in the regenerated state.

More specifically, in the anode regeneration mechanism, the anode is formed in the shape of a round bar and is rotatably provided around the axis of the round bar, and the shield body encloses the anode. In addition to having a cover structure, a reaction opening is formed that opens a part of the outer peripheral surface of the anode along the axial direction to the reactive film formation region. Of the round bar-shaped outer peripheral surfaces that alternately pass through the regeneration space formed in the body, the outer peripheral surface passing through the reaction opening may be capable of DC discharge with the cathode.

In the shield body, the reproducing space formed inside the shield body is positioned so as to be opposite to the reaction opening with the anode interposed therebetween, and the reproducing cathode may be provided in the reproducing space. . Therefore, a DC discharge is caused between the regeneration cathode and the surface of the anode facing the regeneration space to form a conductive film on the anode. The cathode is provided with a magnet for generating a magnetic field on the target surface, and the anode is arranged laterally with respect to the cathode. The polarity of the magnet arranged on the outermost side of the cathode is arranged on the anode. It is also possible to adopt a configuration in which an auxiliary magnet having a polarity opposite to the above is provided.

Also in the reactive film forming apparatus according to the present invention, a mask for limiting the reactive film forming region is provided between the target and the film forming object, and the mask is formed between the mask and the film forming object. It is possible to employ a configuration in which the reactive gas can be supplied to the. The present invention may have the following configurations. That is, while introducing a reaction gas and an inert gas into a chamber provided with an anode and a cathode on which a conductive target is arranged, a DC discharge is generated between the anode and the cathode in the chamber, and a predetermined amount is discharged from the target. An insulating film is to be formed on the film-formation object placed at a position, and a shield is provided between the anode and the cathode, and the anode is covered by the shield to form the film. This is a structure in which a portion where no film is formed and a portion where the anode is exposed from the shield body and film formation proceeds are provided.

This does not provide an anode regeneration mechanism for the anode as described above, but moves the anode and the shield body relative to each other and, as a result, determines whether or not the anode is exposed to the cathode. The presence or absence of the progress of the film) is to be switched. Even by doing this,
The life of the anode can be prolonged, which leads to suppression of the disappearance of the anode. Even if the anode regeneration mechanism is not adopted as described above, the anode may be formed in a round bar shape, and the shield body may have a cover structure that encloses the anode. Further, the anode may have a structure in which the anode is rotated while having its round bar-shaped axis as a center.

On the other hand, in the reactive film forming method according to the present invention,
When the insulating film is formed, a conductive film is formed on the anode in the same chamber to prevent the disappearance of the anode.

[0017]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 shows a first embodiment of the reactive film forming apparatus 1 according to the present invention. In this reactive film forming apparatus 1, a cathode 4 is provided near the upper ceiling in the chamber 3, and the cathode 4 itself also serves as a conductive target. A central magnet 5 and an outer peripheral magnet 6 are provided on the back side (upper side) of the cathode 4 in a concentric arrangement. A ground shield cover 7 is provided so as to entirely surround the outer peripheral portion of the cathode 4 and the outer peripheral portions of the magnets 5 and 6.

Further, a carrier 10 for the film-forming target W is provided at a position spaced apart from the cathode 4 (target) by a predetermined distance, and the film-forming target W is placed on the carrier 10. In addition to these basic configurations, the reactive film forming apparatus 1 according to the present invention includes the anodes 12 and the anodes 1 on both sides of the ground shield cover 7 in the center.
An anode regeneration mechanism 13 incorporating 2 is provided. As shown in FIGS. 2 and 3, the anode 12 is formed in the shape of a round bar whose axis is horizontal.

The anode regeneration mechanism 13 uses the anode 1
It has a shield body 15 having a cover structure that wraps around 2, and a rotation drive unit 16 such as a motor for rotating the anode 12 around its axis. The anode 12 has a bearing 18 in which a bearing 17 is installed.
It is held rotatably around the axis. The rotation of the anode 12 by the rotation drive unit 16 is set so as to be continuously performed in a fixed direction. It is also rotated at a relatively low speed. The shield body 15 separates a predetermined portion (most range) of the outer peripheral surface of the anode 12 from the cathode 4 and keeps the anode 1 while preventing film formation.
A part of the outer peripheral surface in 2 (a part other than the above-mentioned partitioned area from the cathode 4) is exposed to the reactive film forming region Z in the chamber 3, and the exposed part is a reaction for the film formation to proceed. It has the effect of putting it in a state.

Therefore, in the shield body 15, the reaction opening 1 which opens downward along the axial direction of the anode 12 is formed.
9 is formed, and the anode 12 is opened to the reactive film forming region Z through the reaction opening 19. That is, when the anode 12 is rotated by the rotation drive unit 16, when a certain point on the outer peripheral surface of the anode 12 is specified and observed, this portion is reactively deposited through the reaction opening 19 of the shield body 15. Opening and blocking of the region Z are repeated, and DC discharge with the cathode 4 is possible only when the reactive film forming region Z is opened.

The reaction opening 19 of the shield body 15 is limited in opening length so that both ends of the anode 12 are not exposed. A circumferential gap 2 is formed between the inner peripheral surface of the shield body 15 and the outer peripheral surface of the anode 12.
0 is secured. The circumferential gap 20 is also secured in the above-mentioned portion where the opening length of the reaction opening 19 is limited corresponding to both ends of the anode 12. The circumferential gap 20 was made as small as about 0.5 mm. In addition, a reproducing space 21 is formed in the shield body 15 above the anode 12, that is, in a cover having a positional relationship opposite to the reaction opening 16 with the anode 12 interposed therebetween.

A reproducing cathode 22 is provided in the reproducing space 21. This regeneration cathode 22
Is made of metal and doubles as a target. The reproducing cathode 22 is in the shape of a rectangular rod provided in parallel with the longitudinal direction of the anode 12 and having substantially the same length. The reproducing cathode 22 is not in contact with the shield body 15 and the chamber is provided with an insulating bush 23. All 3 are held in an insulated state. A DC voltage is applied to the reproducing cathode 22 and the anode 12 by a reproducing sputtering DC power source 25. A bearing 18 is provided for the anode 12.
Is energized through. In addition, the anode 12 and the shield 1
In No. 5, the ground potential is secured via the peripheral wall of the chamber 3.

It is sufficient that the DC power source 25 for regenerated sputtering can ensure a predetermined sputtering rate and uniformity. Therefore, this regeneration cathode 22 can be commonly provided in the anode regeneration mechanisms 13 on both sides. Needless to say, each anode regeneration mechanism 13 may be provided separately. The DC power source 25 for regenerated sputtering may be shared with the DC power source 26 (see FIG. 1) for applying a reactive film forming voltage to the cathode 4, or may be separately provided.

A gas supply pipe 27 is connected to the shield body 15 toward the reproduction space 21, and the gas supply pipe 25 is connected to the shield body 15.
An inert gas such as argon gas is supplied through the chamber (see FIG. 1). In this way playback space 2
The inert gas supplied to No. 1 fills the space between the regeneration cathode 22 and the anode 12, and at the same time, the shield body 15
The circumferential gap 2 between the inner peripheral surface of the anode and the outer peripheral surface of the anode 12.
It leaks into the chamber 3 via 0, and as a result, it fills the space between the anode 12 and the cathode 4 (target), that is, the reactive film-forming region Z.

In the chamber 3, the cathode 4
A mask 30 is provided between the (target) and the film formation target W, and the reactive film formation region Z is formed by the mask 30.
Are limited. Further, the mask 30 and the film-forming target W
A shower ring 31 is provided between and to surround the reactive film formation region Z limited by the mask 30, and a reactive gas such as oxygen or nitrogen can be ejected from the shower ring 31. Has become. As described above, in the anode regeneration mechanism 13, the circumferential gap 20 between the inner peripheral surface of the shield body 15 and the outer peripheral surface of the anode 12 is provided.
Is as small as about 0.5 mm, and the inert gas leaks from the inside of the shield body 15 to the reactive film formation region Z through the circumferential gap 20 to the reactive film formation region Z side. The existing reactive gas (oxygen, nitrogen, etc. ejected from the shower ring 31) does not enter the shield body 15.

Needless to say, the peripheral wall of the chamber 3 is a pressure partition wall, which can withstand evacuation, and is provided with an exhaust portion 32 so that it can be exhausted if necessary. Next, a reactive film forming method using the reactive film forming apparatus 1 of the present invention having such a configuration will be described. First, the film-forming target W is set on the carrier 10, the inside of the chamber 3 is evacuated, and then an inert gas such as argon gas is supplied from the gas supply pipe 25 into the shield body 15 of each anode regeneration mechanism 13. . Thereby, the inert gas is supplied into the chamber 3.

Separately from this, a reactive gas such as oxygen or nitrogen is directly supplied from the shower ring 31 into the chamber 3. Then, when the DC power supply 26 for applying the reactive film forming voltage is turned on, glow discharge occurs in the chamber 3 in the inert gas atmosphere, and the positive ions ionized by the plasmaization of the inert gas are cathodes. Four
(That is, the target), the cathode 4
On the surface of, the sputtering phenomenon occurs, and as a result, the sputtered particles are scattered while evaporating, and the scattered sputtered particles are deposited on the film-forming target W to form an insulating film thereon.

At this time, as shown in FIG. 4A, the reaction opening portion 1 of the shield body 15 is formed on the outer peripheral surface of the anode 12.
The insulating film Y (the portion shown by hatching) is also formed in the portion exposed from 9 to the reactive film forming area Z in the chamber 3. However, this insulating film Y is used as the shield 15
Is not attached to the portion X that limits the opening length of the reaction opening 19 corresponding to both ends of the anode 12. Therefore, in each anode regeneration mechanism 13, the rotation driving unit 16
Is operated to rotate the anode 12 in one direction, and
The DC power source 25 for regenerated sputtering is turned on.

Then, in the range where the anode 12 does not correspond to the reaction opening 19, that is, in the part where the reactive film forming region Z is cut off by moving toward the regeneration space 21, a DC discharge is generated between the cathode 12 for regeneration. Happened and Figure 4
As shown in (B), the conductive film 28 is formed on the outer peripheral surface of the anode 12. This conductive film 28 is
The shield body 15 is attached also to the portion X that limits the opening length of the reaction opening 19 corresponding to both ends of the anode 12. Therefore, even after this, the anode 12
By continuing to rotate, the area where the conductive film 28 is formed is again exposed to the reactive film formation area Z in the chamber 3 from the reaction opening 19 of the shield body 15, and the conductivity is reduced. A DC discharge will occur between the membrane 28 and the cathode 4.

By rotating the anode 12 in this manner, the outer peripheral surface of the anode 12 alternately passes through the regeneration space 21 and the reactive film-forming region Z, and the reaction state and the regeneration state are alternately switched. . Therefore, the anode 12 continues to maintain conductivity for a long time, and the phenomenon of disappearance of the anode is prevented or suppressed to a state where it is hardly a problem. In the anode regeneration mechanism 13, the inner surface 15a (front side in the rotation direction of the anode 12) of the inner surface of the shield body 15 on the right side in FIG. 3 acts as a regeneration sputter anode with the outer peripheral surface of the anode 12. However, since the outer peripheral surface of the anode 12 which appears by rotation corresponding to this state is still in the state where the insulating film Y is still formed (the state where the conductive film 28 is not attached), this is the case. As a result, this leads to the advantage of preventing the disappearance of the anode of spatter that occurs in the reproduction space 21.

Further, in the anode regeneration mechanism 13, the shield body 15 has a reaction opening portion 19 facing downward so that the anode 12 is arranged laterally to the cathode 4 (that is, the anode). Since the cathode 12 and the cathode 4 face the same direction), this is also a good material such that spatter particles (Si particles or the like) scattered from the cathode 4 are difficult to directly adhere to the anode 12. Has become. FIG. 5 shows a second embodiment of the reactive film forming apparatus 1 according to the present invention.

The reactive film forming apparatus 1 of the second embodiment differs most from the first embodiment described above in that the auxiliary magnet 40 is used for the anode 12 of the anode regeneration mechanism 13.
Is that it is embedded. This auxiliary magnet 40
Are arranged so that their polarities are opposite to those of the outer peripheral magnet 6 arranged on the outermost side of the cathode 4. By doing so, the electrons generated on the surface of the cathode 4 are efficiently guided to the anode 12 by being induced by the lines of magnetic force. Therefore, the reactive sputtering phenomenon as the anode 12 is more easily caused and stabilized.

The magnetic field generated by the auxiliary magnet 40 has a function of avoiding the bias of the reproduction sputtering plasma due to the ExB drift phenomenon and causing the electrolysis and the magnetic field in the portion where the reproduction sputtering occurs to approach in parallel. By the way,
The magnet arrangement of the magnets 5 and 6 included in the cathode 4 forms a magnetic tunnel in a ring state, eliminates the bias of the plasma due to the ExB drift, and the cathode 4 (that is, the target).
The above uniform plasma generation is obtained. Figure 6
Shows a third embodiment of the reactive film forming apparatus 1 according to the present invention.

The reactive film forming apparatus 1 according to the third embodiment is
It is implemented as a film coater. That is, the chamber 3 having a planar cylindrical shape is divided into an exhaust chamber 51 and a film forming chamber 52 by a partition wall 50 that diametrically intersects the central portion of the chamber 3, and the film F is cooled at the center of the chamber 3. A guide roller 54 that also serves as a roller is provided, and a film reel W and a film reel 56 are provided for the exhaust chamber 51.

This film F corresponds to the film-forming object. Further, in the film formation chamber 52, a plurality of anode regeneration mechanisms 13 incorporating the cathodes 4 and the anodes 12 are arranged along the circumferential direction of the chamber 3 while being arranged alternately. A plurality of masks 30 are provided at a predetermined interval from each other with respect to the film F (object to be film-formed) which is conveyed in the film-forming chamber 52 along the outer peripheral surface of the guide roller 54. A gas supply pipe 2 for supplying an inert gas between each mask 30 and the film F.
7 is provided.

In the reactive film forming apparatus 1 according to the third embodiment, the reactive film forming method for the film F (object to be formed) and the function and effect of the anode regeneration mechanism 13 are substantially the same as those in the first embodiment. , Detailed description is omitted here. As is clear from the third embodiment, widespread versatility is conceivable in the embodiment of the reactive film forming apparatus 1 according to the present invention. For example, extension to an in-line type device (in this case, a plurality of anode regeneration mechanisms 13 are arranged in a plane), a carousel type batch device (in this case, a plurality of anode regeneration mechanisms 13 are arranged in a cylindrical configuration), etc. Is also possible.

Further, the following various modes can be considered in the anode regeneration mechanism 13. It is preferable to add a cooling structure to the anode 12 so that the temperature can be controlled. By doing so, the conductive film 28 formed on the outer peripheral surface of the anode 12 is prevented from peeling off due to thermal stress. Further, if the cooling structure is appropriately added to the regeneration cathode 22, the heat input to the target can be removed, which is preferable.

The reproducing cathode 22 may be of a disc type, and in this case, the anode 12 may be arranged in a regular square or a regular hexagon so as to surround the disc type reproducing cathode 22. It is also possible to form the anode 12 in the shape of an endless belt made of metal and to alternately switch between a reaction state in which film formation proceeds and a regenerated state in which film formation does not occur by the circular operation of the belt. Thus, the method of operating the anode 12 is not limited to rotation. For example, in addition to the revolving operation and the rotating operation as described above, a case of reciprocating operation is included. Further, the rotation speed at the time of this rotation and the operation speed for performing various operations are not limited to the constant speed or the continuous operation, and may be a speed change operation or an intermittent operation.

The method for forming the conductive film 28 on the anode 12 is not limited to the sputtering method, and arc ion plating or vacuum vapor deposition can be used. The direction in which the anode 12 is provided (the direction in which the reaction opening 19 is provided in the shield body 15 and the positional relationship with the cathode 4) is not necessarily the position in which the sputtered particles scattered from the cathode 4 are difficult to attach (the position of the cathode 4). It is not necessary to make it sideways, etc., but it is possible to limit the adhesion of sputtered particles to some extent by increasing the operating speed such as rotation.

The regeneration cathode 22 is not particularly limited as long as it is a conductive material. However, if Ti or the like whose oxide or nitride is a conductor is adopted, the regeneration cycle for the anode 12 can be set longer. There are advantages. In this case, even if the circumferential gap 20 is not provided between the inner peripheral surface of the shield body 15 and the outer peripheral surface of the anode 12, even the sputtered particles scattered from the cathode 4 do not enter the shield body 15. For example, the invasion of the reactive gas is caused by the anode 12
There is no problem in forming a conductive film with respect to.

Similarly to the cathode 4, the reproducing cathode 22 can also be provided with a magnet to be a magnetron type. Further, this reproducing cathode 22 (magnetron type) can also be made into a round bar type and have a rotatable structure so as to improve its use efficiency. Further, in the reactive film forming apparatus 1 according to the present invention, it is also possible to adopt a configuration in which the anode regeneration mechanism 13 is not provided as in the following fourth to sixth embodiments.

That is, in the above-described first to third embodiments, the conductive film 28 is covered by the shield body 15.
Although the anode 12 is regenerated by forming a film, the anode 12 may be simply rotated, circulated, reciprocated, etc. without performing the reproduction (deposition of the conductive film 28). That is, the life of the anode 12 can be prolonged, and as a result, the disappearance of the anode can be suppressed. FIG. 7 shows a reactive film forming apparatus 1 according to a fourth embodiment of the present invention. In the reactive film forming apparatus 1 according to the fourth embodiment, a chamber 3 provided with an anode 12 and a cathode 4 on which a conductive target is arranged.
DC is introduced between the anode 12 and the cathode 4 in the chamber 3 while introducing a reactive gas and an inert gas into the chamber 3.
The basic configuration of discharging and forming an insulating film on the film-forming target W arranged at a predetermined position from the target is the same as in the first to third embodiments.

However, in the fourth embodiment, the anode 12 is a plate, and can reciprocate in the vertical direction through an appropriate vertical drive mechanism (not shown) such as a crank mechanism. The reciprocating operation in the vertical direction is repeated with or without opening a predetermined interval. A position between the anode 12 and the cathode 4 is such that the anode 12 is exposed (exposed) to the cathode 4 only when the anode 12 descends while the anode 12 reciprocates in the vertical direction. Due to this, a wall-shaped shield body 15 is provided.

Therefore, as the anode 12 reciprocates in the vertical direction, the anode 12 is provided with a portion covered by the shield body 15 where the film formation does not proceed (a rising position) and a portion where the film formation progresses (a descending position). They are coming and going. In the reactive film forming apparatus 1 having such a configuration, the life of the anode 12 can be extended by the time during which the anode 12 is covered by the shield body 15 and film formation does not proceed. FIG. 8 shows a fifth example of the reactive film forming apparatus 1 according to the present invention.
1 illustrates an embodiment.

The reactive film forming apparatus 1 of the fifth embodiment differs from the fourth embodiment in that the anode 12 is formed by a steel belt having an endless belt shape in the vertical direction, and the anode 12 (steel belt)
Is that it can circulate between a pair of upper and lower pulleys 60, 61. That is, the anode 12 has a form like a vertical belt conveyor, and makes an orbiting operation in the vertical direction. The orbiting operation in the vertical direction by the anode 12 is performed continuously or intermittently.

The anode 12 is covered with a wall-shaped shield 15 except for a part near the lower end thereof, and is exposed (exposed) to the cathode 4 in a portion not covered with the shield 15. The points are the same as in the fourth embodiment (see FIG. 7). Therefore, when the anode 12 (steel belt) makes an orbiting operation in the vertical direction, the anode 12 (partial surface of the belt) is shielded by the shield body 15.
The area where the film formation is covered by the film and the area where the film formation is made progress back and forth, and as a result, the area where the effect is obtained is basically similar to that of the fourth embodiment. It is the same.

FIG. 9 shows a reactive film forming apparatus 1 according to a sixth embodiment of the present invention. In the reactive film forming apparatus 1 according to the sixth embodiment, the anode 12 is formed in a round bar shape as in the first embodiment (see FIG. 1) and the second embodiment (see FIG. 5). The shield body 15 is the anode 1
2 has a cover structure that wraps around the anode 1
2 is rotatable around a round bar-shaped axis. Needless to say, the difference between the sixth embodiment and the first and second embodiments is that the regeneration cathode 22 is not provided in the shield body 15, that is, the anode regeneration mechanism 13 is not provided. It is in.

Other functions and effects are the same as the above-mentioned fourth and fifth.
It is substantially the same as the case of the embodiment. By the way, the present invention
The present invention is not limited to each of the above-described embodiments, and can be appropriately modified according to the embodiment.

[0049]

As is apparent from the above description, the reactive film forming apparatus and the reactive film forming method according to the present invention can surely suppress or eliminate the anode disappearance phenomenon.

[Brief description of drawings]

FIG. 1 is a schematic front sectional view showing a first embodiment of a reactive film forming apparatus according to the present invention.

FIG. 2 is a side sectional view showing an anode regeneration mechanism used in the first embodiment.

3 is an enlarged cross-sectional view taken along the line AA of FIG.

FIG. 4 is a diagram illustrating how the anode is regenerated.

FIG. 5 is a schematic front sectional view showing a second embodiment of the reactive film forming apparatus according to the present invention.

FIG. 6 is a schematic front sectional view showing a reactive film forming apparatus according to a third embodiment of the present invention.

FIG. 7 is a schematic front sectional view showing a fourth embodiment of the reactive film forming apparatus according to the present invention.

FIG. 8 is a schematic front sectional view showing a fifth embodiment of the reactive film forming apparatus according to the present invention.

FIG. 9 is a schematic front sectional view showing a sixth embodiment of the reactive film forming apparatus according to the present invention.

FIG. 10 is a schematic front sectional view showing an example of a conventional reactive film forming apparatus.

[Explanation of symbols]

1 Reactive film forming equipment 3 chambers 4 Cathode (illustrated as a target that doubles as a target) 5 magnets (central magnet) 6 magnets (peripheral magnets) 12 Anode 13 Anode regeneration mechanism 15 Shield body 19 Reaction opening 21 Playback space 22 Regeneration cathode 28 Conductive film 30 masks 40 auxiliary magnet W Film forming object Z reactive film formation area

Claims (9)

[Claims] 1. A chamber (3) while introducing a reaction gas and an inert gas into a chamber (3) provided with an anode (12) and a cathode (4) on which a conductive target is arranged.
Between the anode (12) and the cathode (4)
In a reactive film forming apparatus for forming an insulating film on an object to be formed (W) disposed at a predetermined position from the target by C discharge, anode regeneration for forming a conductive film on the anode (12). A reactive film forming apparatus comprising a mechanism (13). 2. The anode regeneration mechanism (13) comprises a shield body (1) between an anode (12) and a cathode (4).
5) is provided so that the relative positions of the shield (15) and the anode (12) and the cathode (4) can be switched between a reaction state where film formation proceeds and a reproduction state where film formation does not occur. 2. The reactive film forming apparatus according to claim 1, wherein the conductive film is formed on the anode (12) in the regenerated state. 3. In the anode regeneration mechanism (13), the anode (12) is formed in the shape of a round bar, and is rotatably provided around the axis of the round bar, and the shield body (15) is provided. ) Has a cover structure that wraps around the anode (12), and a reaction opening (19) is formed to open a part of the outer peripheral surface of the anode (12) to the reactive film formation region (Z) along the axial direction. The anode (12) is shielded (15) when it rotates.
Of the round bar-shaped outer peripheral surface alternately passing through the reaction opening (19) and the regeneration space (21) formed in the shield body (15) by the outer peripheral surface passing through the reaction opening (19). The reactive film forming apparatus according to claim 2, wherein DC discharge is possible between (4). 4. The reproduction space (21) formed in the shield body (15) is positioned so as to be opposite to the reaction opening (19) with the anode (12) interposed therebetween. The reactive film forming apparatus according to claim 3, wherein a regeneration cathode (22) is provided in the inside (21). 5. The cathode (4) is provided with magnets (5, 6) for generating a magnetic field on the target surface, and the anode (1) is provided with respect to the cathode (4).
2) is arranged on its side, and this anode (12) is provided with an auxiliary magnet (40) having a polarity opposite to that of the magnet (6) arranged on the outermost side of the cathode (4). Claim 1 characterized by the above.
5. The reactive film forming apparatus according to claim 4. 6. A mask (30) for limiting a reactive film formation region (Z) is provided between the target and the film formation target (W), and the mask (30) and the film formation target. The reactive film forming apparatus according to any one of claims 1 to 5, wherein a reactive gas can be supplied between the reactive film and the object (W). 7. A chamber (3) while introducing a reaction gas and an inert gas into a chamber (3) provided with an anode (12) and a cathode (4) on which a conductive target is arranged.
Between the anode (12) and the cathode (4)
In a reactive film forming apparatus for forming an insulating film on an object to be film-formed (W) arranged at a predetermined position from the target by C discharge, a shield body () is formed between the anode (12) and the cathode (4). 15) is provided, and a portion where the anode (12) is covered with the shield body (15) and film formation does not progress, and a portion where the anode (12) is exposed from the shield body and film formation progresses are provided. And a reactive film forming apparatus. 8. The anode (12) is formed in a round bar shape, and the shield body (15) has a cover structure enclosing the anode (12), and the anode (12) is a round bar shape. The reactive film forming apparatus according to claim 7, wherein the reactive film forming apparatus is rotatable about an axis. 9. A reactive film forming method for forming an insulating film, characterized in that the disappearance of the anode is prevented by forming a conductive film (28) on the anode (12) in the same chamber (3). And a reactive film forming method.