WO2020030264A1

WO2020030264A1 - A sputtering device, a deposition apparatus, and a method of operating a sputtering device

Info

Publication number: WO2020030264A1
Application number: PCT/EP2018/071525
Authority: WO
Inventors: Thomas Werner ZILBAUER; Tobias Bergmann; Daniel SCHÄFER-KOPYTTO; Daniel Severin
Original assignee: Applied Materials, Inc.
Priority date: 2018-08-08
Filing date: 2018-08-08
Publication date: 2020-02-13
Also published as: KR20210040120A; KR102535667B1; CN112585717A

Abstract

A sputtering device is described. The sputtering device includes a cathode arrangement being cantilevered and comprising a target tube, the cathode arrangement extending along an axial direction and having a first side being a supported side and a second side being an unsupported side; and a dark space shield provided at the second side and at least partially covering the cathode arrangement, the dark space shield providing an overlap region at which the dark space shield overlaps with the target tube along the axial direction.

Description

A SPUTTERING DEVICE, A DEPOSITION APPARATUS, AND A METHOD OF OPERATING A SPUTTERING DEVICE

FIELD

[001] The present disclosure relates to a vacuum deposition, particularly to sputtering. Further, the present disclosure relates to reducing nodule formation at a sputtering target, particularly a rotary sputtering target. Specifically, the present disclosure relates to a sputtering device, a deposition apparatus, such as the vacuum sputtering apparatus, and a method of operating a sputtering device.

BACKGROUND

[002] In many applications, it is desired to deposit thin layers on a substrate. Known techniques for depositing thin layers are, in particular, evaporating, chemical vapor deposition and sputtering deposition. For example, sputtering can be used to deposit a thin layer such as a thin layer of a metal, e.g. aluminum, or ceramics. During the sputtering process, the coating material is transported from a sputtering target consisting of material to be coated by bombarding the surface of the target with ions of a typically inert processing gas at low pressure. The ions are produced by electron impact ionization of the processing gas and accelerated by a large voltage difference between the target, operating as a sputtering cathode, and an anode. This bombardment of the target results in the ejection of atoms or molecules of the coating material, which accumulate as a deposited film on the substrate arranged opposite the sputtering cathode, e.g. below the sputtering cathode.

[003] Segmented planar, monolithic planar and segmented or monolithic rotatable targets may be used for sputtering. Due to the geometry and design of the cathodes, rotatable targets typically have a higher utilization and an increased operation time than planar targets. Accordingly, the use of rotatable targets typically prolongs service life and reduces costs. [0004] A rotary cathode is typically supported by a cathode drive unit of the sputtering installation. During sputtering, the cathode drive unit rotates the rotary cathode. Sputtering is typically carried out under low pressure or vacuum conditions, i.e. in a vacuum chamber.

[0005] Several components may add particles in the processing region. For example, particles and/or dust from re-deposition zones on a target surface edge may result in an enhanced nodule formation and proliferation. Nodules may enhance particle generation during the sputtering process. Enhanced particle generation can reduce the yield and, thus, increases the product maintenance frequency. This may reduce the system productivity due to longer system downtimes.

[0006] Accordingly, there is an ongoing need for improved sputtering devices and methods of operating sputtering devices.

SUMMARY

[0007] In view of the above, a sputtering device, a deposition apparatus, such as a vacuum sputtering apparatus, and a method of operating a sputtering device are provided.

[0008] According to an aspect, a sputtering device is provided. The sputtering device includes a cathode arrangement being cantilevered and comprising a target tube, the cathode arrangement extending along an axial direction and having a first side being a supported side and a second side being an unsupported side; and a dark space shield provided at the second side and at least partially covering the cathode arrangement, the dark space shield providing an overlap region at which the dark space shield overlaps with the target tube along the axial direction.

[0009] According to another aspect, a deposition apparatus is provided. The deposition apparatus includes a vacuum chamber; and a support provided at least partially in the vacuum chamber and configured to support a sputtering device according to any of the embodiments described herein. For example, the sputtering device includes a cathode arrangement being cantilevered and comprising a target tube, the cathode arrangement extending along an axial direction and having a first side being a supported side and a second side being an unsupported side; and a dark space shield provided at the second side and at least partially covering the cathode arrangement, the dark space shield providing an overlap region at which the dark space shield overlaps with the target tube along the axial direction.

[0010] According to another aspect, a method of operating a sputtering device is provided. The method includes adjusting an overlap region of a dark space shield overlapping a target tube along an axial direction of a cathode arrangement comprising a target tube.

[0011] Further aspects, advantages and features are apparent from the dependent claims, the description and the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Some of the above mentioned embodiments will be described in more detail in the following description of embodiments with reference to the following drawings in which:

[0013] FIG. 1 shows schematically a cross-sectional side view of a device for supporting a rotatable target of a deposition apparatus for sputtering material on a substrate according to embodiments of the present disclosure;

[0014] FIG. 2 shows a schematic cross-sectional side view of a portion of a cathode arrangement and a dark space shield according to embodiments of the present disclosure, i.e. an overlapping dark space shield;

[0015] FIGS. 3 A and 3B show schematic side views of a portion of a cathode arrangement and a dark space shield according to embodiments of the present disclosure, and illustrate adjustment of an overlap region; [0016] FIG. 4 shows a flow chart illustrating embodiments of methods of operating a sputtering device according to embodiments of the present disclosure; and

[0017] FIG. 5 schematically shows a deposition apparatus according to embodiments described herein.

DETAILED DESCRIPTION

[0018] Reference will now be made in detail to the various embodiments, one or more examples of which are illustrated in each figure. Each example is provided by way of explanation and is not meant as a limitation. For example, features illustrated or described as part of one embodiment can be used on or in conjunction with other embodiments to yield yet further embodiments. It is intended that the present disclosure includes such modifications and variations.

[0019] To protect portions of a cathode arrangement, for example portions other than the target to be sputtered from the gas discharge and resultant ion bombardment, dark space shields can be provided to protect such portions. A dark space shield can be mounted concentrically to the cathode, maintaining a fixed distance from the cathode surface. The dark space shield may prevent processing gas discharge from contacting the cathode arrangement. Dark space shields are typically electrically floating. For example, dark space shields can be mounted to the cathode arrangement with an insulating member.

[0020] According to embodiments of the present disclosure, a target edge may further be protected from material re-deposition. A dark space shield can be overlapping with a target edge to reduce or avoid material re-deposition at the target edge and the subsequent nodule formation and proliferation.

[0021] According to some embodiments, a sputtering device is provided. The sputtering device includes a cathode arrangement being cantilevered and comprising a target tube, the cathode arrangement extending along an axial direction and having a first side being a supporting side and a second side being an unsupported side and a dark space shield provided at the second side and at least partially covering the cathode arrangement, the dark space shield providing an overlap region, wherein the dark space shield overlaps with the target tube along the axial direction.

[0022] FIG. 1 shows a sputtering device. The sputtering device includes a cathode arrangement 100. The cathode arrangement can include a backing tube 102. The backing tube can support a target tube 104. The cathode arrangement has a first side 107, e.g. a supported side. As shown in FIG. 1, the cathode arrangement 100 can be supported at the first side 107. Further, the cathode arrangement has a second side 109. The second side is opposite the first side and is an unsupported side. Accordingly, embodiments of the present disclosure relate to the cantilevered cathode arrangement.

[0023] According to some embodiments, which can be combined with other embodiments described herein, the cathode arrangement may be configured for vertical substrate processing. The first side 107 can be a lower side and the second side 109 can be an upper side. The first side and the second side are typically sides opposing each other along the axial direction of the cathode arrangement 100. The axial direction may also be considered a length direction or, considering a rotary cathode, wherein a target tube rotates during sputtering, the axial direction may also be considered parallel to a rotation axis of the target tube.

[0024] FIG. 1 shows the dark space shield 200 provided at the second side of the cathode arrangement 100. The dark space shield 200 includes a shield body 210 and a ring-shaped portion 212. The ring-shaped portion 212 may surround or at least partially surround portions of the cathode arrangement. Portions of the cathode arrangement are covered by the dark space shield, for example, for protection of the portions of the cathode arrangement.

[0025] The dark space shield 200, as shown in FIG. 1, extends from the second side along the axial direction, for example, towards the first side 107. The dark space shield, and particularly the ring-shaped portion 212, extends from the second side towards the first side and/or along the axial direction to provide an overlap region 230. The ring- shaped portion 212 covers the target tube 104 in the overlap region. [0026] FIG. 1 further shows a support 110 of a deposition apparatus. The support 110 supports the sputtering device, for example, the cathode arrangement 100, at the first side 107 of the cathode arrangement. The support 110 may include a cathode drive unit (not shown) to rotate the target tube. For example, the target tube rotates or is rotated during sputtering to improve uniform material utilization.

[0027] Sputtering is a process in which atoms are ejected from a solid target material due to bombardment of the target by energetic particles. The term“coating” and the term“depositing” are used interchangeably herein. The terms“sputtering apparatus” and “deposition apparatus” shall refer to an apparatus which uses sputtering for depositing a target material, typically as a thin film, on a substrate.

[0028] Target materials include (but are not limited to) pure metals such as aluminum (Al), copper (Cu), molybdenum (Mo), silver (Ag) and gold (Au); metal alloys such as an aluminum-niobium (AlNb) alloy, an aluminum-nickel (AlNi) alloy or an titanium- tungsten alloy (TiW); semiconductor materials such as silicon (Si); and dielectric materials such as nitrides, carbides, titanates, silicates, aluminates and oxides, e.g. silicon oxide (SiO_x), and transparent conducting oxides (TCO) such as impurity-doped ZnO, e.g. ZhO:A1, AlZnO, ln₂0₃, Sn0₂ and CdO, as well as Sn-doped ln₂0₃ (ITO), indium gallium zinc oxide (IGZO), and F-doped Sn0₂. According to some embodiments, embodiments of the present invention may be particularly useful for Si, SiOx, Ti, TiOx, TiW and ITO.

[0029] The term“substrate” as used herein shall refer to both inflexible substrates, e.g., a wafer or a glass plate, and flexible substrates, such as webs and foils or thin glass. Representative examples include (but are not limited to) applications involving: semiconductor and dielectric materials and devices; silicon-based wafers; flat-panel displays (such as TFTs) and touch screen panels (TSPs); masks and filters; energy conversion and storage (such as photovoltaic cells, fuel cells, and batteries); solid-state lighting (such as LEDs and OLEDs); magnetic and optical storage; micro-electro- mechanical systems (MEMS) and nano-electro-mechanical systems (NEMS); micro optic and opto-elecro-mechanical systems (NEMS), micro-optic and optoelectronic devices; transparent substrates; architectural and automotive glasses; metallization systems for metal and polymer foils and packaging; and micro- and nano-molding.

[0030] The term“rotatable target” or“target tube” as used herein shall refer to any cathode arrangement which is adapted to be rotatably mounted to a sputtering installation. Typically, a“rotatable target” or“target tube” includes a target structure adapted for being sputtered. The term“rotatable target” or“target tube” as used herein shall particularly refer to magnetically-enhanced cathode assemblies, in which magnet assemblies are provided, for example, internal magnetic units, e.g. permanent magnets, for improved sputtering.

[0031] Rotatable targets, in the following also referred to as rotatable sputtering cathodes or rotary cathodes, may be made of a hollow cylindrical body of the target material, i.e. a target tube. These rotary targets are also referred to as monolithic targets and may be manufactured by casting or sintering these targets from the target material.

[0032] Non-monolithic rotatable targets typically include a cylindrical rotatable tube, e.g. a backing tube, having a layer of the target material applied to the outer surface thereof. In the manufacture of such rotatable sputtering cathodes, the target material may, for example, be applied by spraying onto, or casting or isostatic pressing of powder onto the outer surface of a backing tube. Alternatively, a hollow cylinder of a target material, which may also be referred to as a target tube, may be arranged on and bonded, e.g. with indium, to the backing tube to form a rotary cathode.

[0033] In order to obtain increased deposition rates, the use of magnetically-enhanced cathodes has been proposed. This may also be referred to as magnetron sputtering. Magnetic units, which may include an array of magnets, may be arranged inside the sputtering cathode, e.g. inside a backing tube or inside a monolithic target, and provide a magnetic field for magnetically-enhanced sputtering. The cathode arrangement or the target tube is typically rotatable about the longitudinal axis of the cathode arrangement so that the target tube can be turned relative to the magnetic units. At one of the cathode arrangement sides, for example, the first side 107 in FIG. 1, a ring-shaped part adapted for attaching the cathode to the drive unit is mounted to the support. The term“side”, “end” or“edge” as use herein in the context of the rotatable target or cathode shall refer to the side, end or edge in the axial direction of the cathode arrangement or the target. Typically, the outer cross-section of a target or a cathode arrangement is circular with a diameter of, for instance, between 8 cm and 30 cm, whereas the length of the target or cathode arrangement can be in the range of meters, such 1 m or longer and/or 3 m or shorter, or even up to 4 m.

[0034] During operation, electrically non-screened cathode assemblies may suffer from gas discharge (and arcing) at the cathode arrangement edges due to electrical field accumulation. Additionally, during operation, electrically non-screened cathode areas beyond the target region (e.g. the backing tube) may be exposed to the plasma dark space (also called cathode fall defining the dark zone in the gas-discharge volume that does not emit light), in which ions are accelerated from the plasma to the cathode. This may result in unintended sputtering of non-deposition material, resulting in film deposition with non-deposition material contamination. In order to avoid sputtering in such an area, a geometrical confinement of the potential discharge region below the characteristic dark space width prevents electron acceleration to energies sufficient for plasma ignition in this confined space. Such an confinement can be achieved by an electrically floating shielding in the proximity of the cathode surface that is not intended to be exposed to sputtering. The distance between the cathode and the shield is dependent on the plasma pressure (Paschen-curve) and typically a few mm

[0035] To avoid gas discharge and sputtering on the unsupported side, i.e. upper side of the cathode arrangement, and additionally to reduce particle generation by, for example not dual formation, a dark space shield is provided for screening the region of the target tube that otherwise would, for example, be directly exposed to sputtering. However, dust accumulation from material re-deposition in the proximity of the normally sputtered regions on the target surface, e.g. the edge of the target end and also at the surface of the target end, often referred to as re-deposition zone, will lead to yield loss due to increasing particles transferred to the substrates during the process of film deposition. Furthermore, when particle from the target edge get distributed onto the target surface, the particles can be the seed for nodule growth, giving rise to further arcing and accelerated particle and nodule generation: This would increases the frequency of required maintenance of the deposition systems, resulting in both yield and productivity loss. An additional overlap of the dark space shield with the target tube helps to avoid dust accumulation at the target edge and re-deposition within the re deposition zone at the target edge and, thus, reduces particle generation. The shield may comprise or may be made of an isolator or a metal or metal alloy which is on floating potential, e.g. isolated against the cathode potential. Target tubes screened by means of non-rotating dark space shields may suffer from material deposition only on one side of the dark space shield during the sputtering process. The resulting film formed on the dark space shield surface may break and material flakes may fall or may be transported onto the substrate, masking the deposition of the sputtered material to the substrate and causing defects in the products. Further, the flakes may fall or may be transported onto the target surface initiating further nodule growth and nodule induced particle generation. According to embodiments of the present disclosure, the dark space shield may be provided at the cathode arrangement to rotate together with the target tube.

[0036] By means of the dark space shield rotating together with the target tube, the whole surface of the dark space shield is exposed to the material deposition. The layer of material is deposited uniformly across the surface of the dark space shield. Material deposition may be provided for a longer time before material breaks and falls onto the substrate. Accordingly, the risk of contamination of the substrate and the maintenance time and costs compared to non-rotating dark space shields are reduced.

[0037] FIG. 2 shows a portion of a cathode arrangement. The cathode arrangement may include a backing tube 102 and a target tube 104. A dark space shield 200 is mounted at an upper side of the cathode arrangement. According to some embodiments of the present disclosure, which can be combined with other embodiments described herein, the cathode arrangement can be essentially vertical. Vertical or essentially vertical allows for a deviation from the direction of gravity of +- 10°. A slight inclination to have a substrate surface facing upward during processing may result in an improved stability of a substrate in or at the substrate carrier. A slight inclination to have a substrate facing downward during processing may result in reduced particle adherence on the substrate. [0038] As shown in FIG. 2, the dark space shield 200 includes the shield body 210 and the ring-shaped portion 212. The dark space shield 200 can be mounted to the cathode arrangement to be electrically floating with respect to the cathode arrangement. For example, the dark space shield may be mounted with a fixing means 242, such as a screw. An insulating member 220 can be provided for electrically insulating the dark space shield 200 from the cathode arrangement.

[0039] According to some embodiments, which can be combined with other embodiments described herein, the dark space shield 200 including the shield body 210 and the ring-shaped portion 212 can have a cup -like shape. An outer surface 214 of the dark space shield can be structured to increase material adherence of deposition material. Accordingly, service frequencies for replacement of the dark space shield can be reduced before deposition material that has accumulated on the dark space shield may flake off and contaminate the processing area. For example, the outer surface 214 may include a cylindrical outer surface of the ring -shaped portion 212 and an outer surface of the shield body 210. The structure provided at the outer surface may include a plurality of protrusions and/or recesses, for example, horizontally oriented rims, as shown in FIG. 2.

[0040] According to yet further embodiments, which can be combined with other embodiments described herein, the outer surface and/or the structure on the outer surface may have a surface roughness or additional surface treatments to maximized adhesion of re-deposition material. Accordingly, flaking off of accumulated material may be further reduced. According to some embodiments, which can be combined with other embodiments described herein, the structure on the outer surface may include a first structure having a first length scale, for example, in the range of millimeters. Further, the structure on the outer surface may include a second structure having a second length scale, for example, a roughening of the surface. The second length scale can be at least five times smaller than the first length scale. Different length scales may improve adhesion of accumulated material. For example, a length scale may refer to the distance between two neighboring protrusions or two neighboring recesses. A length scale may be particularly provided for repetitive structure patterns. [0041] FIG. 2 illustrates the dark space shield 200, and particularly the ring-shaped portion 212 of the dark space shield having a recess 213. The recess 213 extends along the axial direction of the cathode arrangement and provides for the overlap region 230, wherein the dark space shield 200 overlaps the target tube 104. A gap 215 between the target tube 104 and the dark space shield 200 is provided. According to some embodiments, which can be combined with other embodiments described herein, the gap is chosen to be small enough to assure avoiding plasma ignition in the confined area. The gap dimensions may vary dependent on the operation pressure and gas applied for the sputter process (Paschen-curve). The gap may be between 0.5 mm and 5 mm. In the absent of plasma in the gap, the portions of the cathode arrangement covered by the dark space shield are protected. For example, a nodule generation in the overlap region can be reduced or avoided.

[0042] Typically, a hot-ring erosion structure at the target tube can be found at the edges of the target tube, for example, adjacent to the second side of the cathode arrangement, when sputtering material from the target tube. Considering the upper portion of the cathode arrangement, i.e. the second side as described herein, nodule generation may occur between the hot ring erosion structure and upper end of the cathode arrangement. Particles and/or dust may accumulate at the upper end and may result in additional nodule formation. Utilizing embodiments of the present disclosure including an overlap region, nodule formation and proliferation can be reduced. Accordingly, particle generation and downtimes of the system can be reduced.

[0043] According to some embodiments, which can be combined with other embodiments described herein, and as exemplarily shown in FIG. 2, a spacer 222 can be provided between the cathode arrangement and the dark space shield 200. The spacer may be beneficial to provide a more stable gap width. Control of the gap width can improve the turning off of the plasma in the gap region.

[0044] FIG. 2 shows one spacer 222. For an electrically floating dark space shield, the spacer is typically made of or includes an insulating material. Further, two or more spacers can be provided. For example, three spacers may be provided at angular coordinates of the cathode assembly having a distance of 120°. [0045] FIGS. 3 A and 3B illustrate yet further embodiments of the dark space shield and a sputtering device according to embodiments of the present disclosure. An overlap region, wherein the dark space shield covers the target tube, is varied and/or adjusted. FIG. 3B has a smaller overlap region as compared to FIG. 3A. The cathode arrangement may include the backing tube 102 and a target tube 104. The dark space shield includes two or more components. For example, as shown in FIGS. 3A and 3B, two components may be provided. A first component of the two components may have a cup-like shape and a second component of the two components may have a cup-like shape. The first component can be an outer component and may for example correspond to the dark space shield described with respect to FIG. 2. The first component can include a first shield body 210 and a first ring-shaped portion 212. The second component can include a second shield body 310 and a second ring-shaped portion 312.

[0046] According to some embodiments, which can be combined with other embodiments described herein, the dark space shield may include the first ring-shaped portion and the second ring-shaped portion surrounding the first ring-shaped portion. The first ring-shaped portion and the second ring-shaped portion can be electrically floating with respect to each other. For example, insulating spacers 320 can be provided between the first component and the second component. According to some embodiments, which can be combined with other embodiments described herein, an overlap region can be adjusted in size by the length of the insulating spacers along the axial direction of the cathode arrangement.

[0047] According to yet further optional modifications, one or more spacers 322 can be provided between a first component of the dark space shield and a second component of the dark space shield. For an electrically floating dark space shield, the spacer 322 is typically made of or includes an insulating material. Further, two or more spacers can be provided. For example, three spacers may be provided at angular coordinates of the cathode assembly having a distance of 120°.

[0048] By removing the insulating spacers 320, replacing the insulating spacers 320 with differently sized spacers, or adjustment of the size of the insulating spacers, the first ring-shaped portion 212 and the second ring-shaped portion 312 are movable relative to each other along the axial direction. The length of the overlap region can be adjusted. For example, according to some embodiments, which can be combined with other embodiments described herein, the insulating spacers 320 and/or the spacers 222 and 232, respectively, can include or consist of ceramic material. For example, AlOx, A1N, etc. may be used. According to embodiments, which may be combined with other embodiments disclosed herein, the dark space shield is electrically isolated from the target by means of spacers mounted on the ring-shaped part. The insulating spacers 320 and/or the spacers 222 and 232 may be insulating units, the purpose of which is to electrically isolate the cathode arrangement and the dark space shield. The insulating units may include or consist of an insulating material; a suitable insulating material may be any ceramics or thermo-resistant plastic such as Meldin®, PEEK or the like.

[0049] According to some embodiments, which can be combined with other embodiments described herein, the dark space shield may include the first component and the second component. Two concentric components may be provided. By adding insulating spacer material and adaptation, for example, a reduction of the overlap region can be provided. The adaptation can be beneficial to adjust deposition uniformity of the sputtering device and/or to improve a reduction of particle generation. For example, the position of magnet assemblies within sputtering devices may vary from one sputtering device to another sputtering device. The position of the magnet assembly influences the position of the confined plasma. Accordingly, adaptation of the overlap region may be provided to compensate for position variation of a magnet assembly in a sputtering device. Additionally or alternatively, adaptation may be provided for different types of target tubes, e.g. dog bone targets.

[0050] Inventors of the present application could show that compliance with uniformity requirements for material deposition on large area substrates can be met with an overlapping dark space shield. Compliance with uniformity requirements may be even easier to achieve with an adjustable overlapping dark space shield, wherein the size of the overlap region, in which the dark space shield covers the target tube, can be adapted. This could for example be shown for titanium nitride deposition and evaluating sheet resistance non-uniformity as well as the overlapping dark space shields compliance to high-pressure deposition conditions. It could be also demonstrated that the overlapping dark space shield complies with typical arcing requirements and the overlapping dark space shield’s arcing behavior differences are below the regions of statistically relevance when compared to a non-overlapping dark space shield.

[0051] FIG. 4 shows a flow diagram illustrating methods of operating a sputtering device. As described above, according to some embodiments, an overlap region of a dark space shield overlapping a target tube along an axial direction of a cathode arrangement comprising a target tube may be adjusted, as indicated by box 402. According to some optional modifications, as indicated by box 404, the overlap region can be adjusted relative to a magnet assembly within the target tube. The magnet assembly confines the plasma during sputtering. Having a predetermined size of the overlap region, sputtering (see box 406) can be provided. Particle generation can be reduced while sufficient layer uniformity over the size of the substrate, particularly a large area substrate, can be provided.

[0052] Embodiments of the present disclosure may be particularly useful for material deposition on large area substrates, for example, for manufacturing of displays. In the present disclosure, a“sputtering device” or a“material deposition apparatus” may be configured for material deposition on a substrate as described herein, particularly on large area substrates. For instance, a“large area substrate” can have a main surface with an area of 0.5 m² or larger, particularly of 1 m² or larger. In some embodiments, a large area substrate can be GEN 4.5, which corresponds to about 0.67 m² of substrate (0.73x0.92m), GEN 5, which corresponds to about 1.4 m² of substrate (1.1 m x 1.3 m), GEN 7.5, which corresponds to about 4.29 m² of substrate (1.95 m x 2.2 m), GEN 8.5, which corresponds to about 5.7 m² of substrate (2.2 m x 2.5 m), or even GEN 10, which corresponds to about 8.7 m² of substrate (2.85 m x 3.05 m). Even larger generations such as GEN 11 and GEN 12 and corresponding substrate areas can similarly be implemented.

[0053] FIG. 5 shows a schematic view of a deposition apparatus 500 having a sputtering device provided in a vacuum chamber 510. Material is deposited by the sputtering device on a substrate 520 during substrate processing within the vacuum chamber. The cathode arrangement 100 may include a magnet assembly 550 provided in a target tube of the cathode arrangement 100. The sputtering device can be any sputtering device according to embodiments described herein and can include various details, features, modifications, and aspects described in the present disclosure. The support 110 is at least partially provided in the vacuum chamber 510. The support 110 supports the sputtering device at the lower side of the sputtering device, i.e. the first side as described herein. The support 110 may include a cathode drive unit for rotating the target tube during sputter deposition.

[0054] The embodiment illustrated in FIG. 5 shows a so-called“drop-in drive” wherein the support for the cathode arrangement is provided into or reaches into the vacuum chamber from the side. The support may be mounted to a vacuum chamber wall. The cathode arrangement is supported in a cantilever manner at the lower side of the cathode arrangement.

[0055] This written description uses examples to disclose the invention, including the best mode, and also to enable any person skilled in the art to practice the described subject-matter, including making and using any devices or systems and performing any incorporated methods. While various specific embodiments have been disclosed in the foregoing, those skilled in the art will recognize that the spirit and scope of the claims allows for equally effective modifications. Especially, mutually non-exclusive features of the embodiments described above may be combined with each other. The patentable scope is defined by the claims, and may include such modifications and other examples that occur to those skilled in the art. Such other examples are intended to be within the scope of the claims if they have structural elements that do not differ from the literal language of the claims, or if they include equivalent structural elements with insubstantial differences from the literal language of the claims.

[0056] While the foregoing is directed to embodiments of the disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.

Claims

1. A sputtering device, comprising: a cathode arrangement being cantilevered and comprising a target tube, the cathode arrangement extending along an axial direction and having a first side being a supported side and a second side being an unsupported side; and a dark space shield provided at the second side and at least partially covering the cathode arrangement, the dark space shield providing an overlap region at which the dark space shield overlaps with the target tube along the axial direction.

2. The sputtering device according to claim 1, wherein the cathode arrangement is vertical or wherein the first side is below the second side.

3. The sputtering device according to any of claims 1 to 2, wherein the dark space shield is electrically floating with respect to the cathode arrangement.

4. The sputtering device according to any of claims 1 to 3, wherein an outer surface of the dark space shield is structured to increase material adherence.

5. The sputtering device according to any of claims 1 to 4, wherein the dark space shield comprises: a first ring-shaped portion and a second ring-shaped portion surrounding the first ring-shaped portion, the first ring-shaped portion and the second ring-shaped portion being electrically floating with respect to each other.

6. The sputtering device according to claim 5, wherein the first ring-shaped portion and the second ring-shaped portion are movable relative to each other along the axial direction to adjust the length of the overlap region.

7. The sputtering device according to claim 6, wherein the first ring-shaped portion and the second ring-shaped portion are movable by one or more insulating spacers.

8. The sputtering device according to any of claims 1 to 7, the cathode arrangement further comprising: a magnet assembly within the target tube for confinement of a plasma during sputtering.

9. A deposition apparatus, comprising: a vacuum chamber; and a support provided at least partially in the vacuum chamber and configured to support a sputtering device according to any of claims 1 to 8 at the first side.

10. The deposition apparatus according to claim 9, the support comprising: a cathode drive unit to rotate the target tube.

11. A method of operating a sputtering device, comprising: adjusting an overlap region of a dark space shield overlapping a target tube along an axial direction of a cathode arrangement comprising a target tube.

12. The method of operating the sputtering device according to claim 11, wherein the overlap region is adjusted relative to a magnet assembly within the target tube, the magnet assembly being for confinement of plasma during sputtering.

13. The method of operating the sputtering device according to any of claims 11 to 12, further comprising sputtering material on a substrate with the sputtering device.