JPS63109165A - Magnetron type sputtering device - Google Patents

Abstract

PURPOSE:To promote both the increase of Ar ion and the improvement of dispersion thereof and to enhance the coefficient of effective utilization of a target by increasing a magnet provided on the rear surface of the target to a plurality of pieces in a magnetron sputtering device. CONSTITUTION:In a magnetron sputtering device wherein both a base plate 8 fitted to an anode 9 and a target 2 provided with magnets to the rear surface thereof and impressed with negative voltage are oppositely arranged, the number of the magnet 1 is regulated to at least three pieces or more. Since secondary electrons 4 are subjected to cycloidal motion on the target 2 by means of lines 3 of magnetic force having component parallel to the surface of the target 2, the ionization of Ar is promoted and Ar ions are allowed to collide against the target 2 as a cathode to sputter the target 2 and a thin film is formed on the base plate 8 by depositing the target thereon. Magnetic fields parallel to the surface of the target are increased because the many magnet 1 and the number of Ar ion is increased with dispersion thereof uniformized and the errosion part is windened; thereby the coefficient of utilization is enhanced.

Description

[Detailed description of the invention] [Industrial application field] The present invention relates to improvements in magnetron type sputtering equipment.

[Conventional technology]

As shown in FIG. 3, in a conventional magnetron type sputtering apparatus, a substrate 8 is attached to a substrate holder 9 which also serves as an anode and is disposed facing a target 2 having a magnet 1 on the back side. Ar ionization is promoted by the movement of the secondary electrons ejected from the glass, and the formed Ar ions collide with the target 2 to sputter the target material and deposit it on the substrate S to form a thin film. .

[Problem that the invention seeks to solve]

The conventional magnetron sputtering apparatus described above uses only two cylindrical magnets, and therefore has the disadvantage that there are few lines of magnetic force parallel to the target surface necessary to restrain electrons emitted from the target surface. Moreover, since there are only a limited number of magnetic lines of force parallel to the target surface that can bind electrons, only a portion of the target is eroded, resulting in a low effective utilization rate of the target.

[Means for solving problems]

The present invention is aimed at increasing the effective utilization rate of a target in a magnetron type sputtering device in which particles sputtered from a target are deposited on a substrate placed on an anode provided opposite to a target with a magnet installed on the back side. The target is characterized in that three or more magnets are arranged on the back side of the target.

〔Example〕

Next, the present invention will be explained with reference to the drawings.

FIG. 1 is a schematic diagram showing an embodiment of the present invention. Secondary electrons 4 emitted from the target 2 to which a negative voltage is applied move under the influence of the magnetic field 3 created by the magnet 1. In particular, the magnetic field lines with components parallel to the surface of the target 2 cause the secondary electrons 4 to move cycloidally on the target 2, so A
The ionization of r is promoted to produce Ar ions. Ar
The ions collide with target 2, which is a cathode, and sputter target material. As a result, the target material is deposited on the substrate 8, such as a semiconductor, to form a thin film.

Therefore, the more Ar ions that collide with the target 2, the more the target is eroded, and the more uniform the distribution of A1- ions, the higher the effective utilization rate of the target.

FIG. 2 shows a cross-sectional view (a) and a vertical cross-sectional view (b) of the target and magnet portion. This example shows a case with four magnets. In the present invention, three or more magnets are installed on the back surface of Targetera I, so that the magnetic field parallel to the target surface is increased, the Ar ions are increased, and the distribution becomes uniform.

As a result, the effective utilization rate of the target will increase by a bit.

〔Effect of the invention〕

As explained above, the present invention promotes an improvement in the distribution of Ar ions by increasing the number of magnets on the back surface of the target in a magnetron type sputtering apparatus compared to the conventional one, and as a result, the effectiveness of the target is increased. "Utilization rate"
-It has the effect of making you H.

[Brief explanation of the drawing]

FIG. 1 is a schematic configuration diagram of an embodiment of the present invention, and FIG. 2 (a>
, (b) are a cross-sectional view and a vertical cross-sectional view of the target and magnet portions of FIG. 1, respectively, and FIG. 3 is a schematic diagram of a conventional magnetron type sputtering apparatus. DESCRIPTION OF SYMBOLS 1...Magnet, 2...Tagera I, 3...Magnetic field lines, 4...Secondary electrons, 7...Power source, 8...Substrate, 9...
... Anode (substrate holder), 10... Erosion.

Claims (1)

[Claims] In a magnetron type sputtering device, an anode is placed facing a target that has a magnet on the back side, a substrate is attached to the anode, and target material is sputtered and deposited on the substrate. Three or more magnets are placed on the back side of the target. A magnetron type sputtering device characterized by: