JPS59133370A - Magnetron sputtering device - Google Patents

Abstract

PURPOSE:To improve considerably the effective utilizing efficiency of a target in a magnetron sputtering device by disposing many magnets on the rear of the target so as to pair opposite electrodes and moving the magnet group with respect to the target. CONSTITUTION:Many magnets 4 are disposed on the rear of a target 1 in a magnetron sputtering device in such a way that the opposing electrodes thereof are made the electrodes opposite to each other. The magnetic fluxes 5 of force penetrating the target 1 increase as many as several tens times more than in the prior art and the effective utilizing area of the target increases. These magnet groups 4 are fixed by a framework 8 and are moved in parallel with the target surface or further the groups 4 are rotated on the rear of the target, by which sputtering regions 6 are considerably widened and the effective utilizing efficiency of the target 1 is improved.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a magnetron sputtering apparatus.

As the name suggests, magnetron sputtering equipment uses the action of a magnetic field to increase discharge efficiency, making it possible to significantly increase efficiency compared to conventional sputtering that does not use a magnetic field.

However, conventional magnetron sputtering equipment has one major drawback.

FIG. 1 shows the configuration of a conventional magnetron sputter.

High-voltage power is applied to the target 1 from a high-voltage power source 2 (which may be a high-frequency electric source), and Af ions 3 are discharged and collide with the target, causing sputtering of the target material.

A magnetic field 5 is generated by installing magnets 4.4' and 4'' behind the target in this iL, and in this field, electrons (not shown) perform magnetron motion due to the interaction between the electric field and the magnetic field, thereby generating Ar ions. As a result, the discharge efficiency of sputtering equipment has increased, and the same level of sputtering efficiency as above has been achieved.This has led to the advancement of the use of sputtering equipment in fields where it had not previously been used.

However, the major drawback of this method is that, as shown in Figure 2, the area to be sputtered by Macnetron discharge is not the entire surface of the target, but only the area where the tangential direction of the magnetic field is almost parallel to the target surface is sputtered f'L (sputter area 6). )
However, there is a phenomenon in which almost all other parts remain unspattered. For this reason, the target usage efficiency is extremely low, and the efficiency is only about 15 to 20% of the total volume of Yuichi's target, and the remaining targets cannot be reused, so the target cost is 5 to 6 times higher than the conventional target. The frequency of replacement was also frequent, and the cost of parts made with IL and work efficiency were problems.

Furthermore, when the target erodes into the shape shown in the sub-siter region 6 in Fig. 2, the discharge concentrates in the most deeply eroded part and the sputtering power is concentrated there, causing localized sputtering. As the power density increases, a phenomenon occurs in which fine particles from the target member fly out. This has caused quality problems such as sputtering and roughening of the film surface.

The present invention was made in order to solve the drawbacks of the conventional magnetron sputter. Next, a conceptual diagram of the non-inventive embodiment is shown in Fig. 3 (plan view).All the magnets 4 are arranged on the back surface of the target 1 so that the nearest magnetic poles are opposite to each other.

When a large number of magnetic poles are arranged in this manner, as shown in the cross-sectional view of the target in FIG. 4, a large number of magnetic flux lines 5 pass through the target rattle. In the cross-sectional view of Figure 4, it appears that there are only a few magnetic fluxes, but as you can see from the magnet arrangement in the third case, the magnetic fluxes penetrate vertically and horizontally, so compared to the conventional magnet arrangement, n is a number. The number of magnetic flux lines is ten times greater. As a result, the effective use area of the target is increased. As a result, the effective efficiency of the target is 40 to 50%, which is about three times as much as the conventional method. This situation is shown in FIG. 5 as a cross-sectional structure of the target. To further increase the efficiency of the present invention, the magnet group of the present invention may be moved so that its position changes with respect to the target. That is, by moving the magnet, the distribution of magnetic flux on the target surface is made uniform, thereby suppressing variations in sputtering power density depending on the position of the target. Even with the method according to the invention, there remains a region of the target that is not susceptible to sputtering. Areas 7 and 7 where the beams are not exposed are shown by the shaded areas in FIG. This area is a region 7 where magnetic lines of force repel each other and no magnetic lines of force pass through, and a region 7 where no electron magnetron movement occurs because the lines of magnetic force are perpendicular to the target surface.
Equivalent to electricity.

Although linear, curved, circular motion, or a combination of these methods may be considered as a method of moving the magnet group, the most efficient method should be adopted. Since the idea is the same, the present invention will be described with reference to the case where the magnet group is moved by M'ff9.

In Fig. 6, the magnet group 4 is fixed with the framework 8, and 2'L'
e Arrow direction - Move it so that it is parallel to the target surface. In this way, for example, when the magnet group 4 is moved from position 9 to position 10 in the upward direction in FIG. has a surface area of 9, and the sputtered area 7 also becomes sputtered.

As is clear from Figure 6, this method greatly increases the sputtering area, and this alone increases the efficiency by 6.
It becomes more than electric.

Of course, by applying not only a simple linear motion but also a rotational motion to the strainer, the area 71 where spatter is not applied in Fig. 6 can be covered by the flux of magnetic lines of force, thereby preventing sputtering from the target L1. The area will be almost gone. The usage efficiency of Konyo Appuba target is 90
It rises to near the peak.

According to the present invention, the efficiency of target utilization is much better than that of the conventional method, so the conventional method of using a target several tens of times larger than the effective sputtering area in order to improve the sputtering film thickness distribution is no longer necessary. This also improves the target usage efficiency.

As described above, according to the present invention, the utilization efficiency of the target can be increased and the target cost can be reduced. Furthermore, by moving the magnet, intensive sputtering power density can be avoided n1
The same sputtering film quality as above can be obtained, and the n1 target usage efficiency is further increased, so that the target area can be reduced, target cost can be reduced, and sputtering equipment can be downsized.

Since the present invention has such excellent features, it has high industrial utility value, and is particularly suitable for producing thin films for electronic parts, for example, for producing metal films for process C.

[Brief explanation of the drawing]

FIG. 1 is a full sectional view of the IW of a conventional magnetron sputter, and FIG. 2 is a diagram showing the state of target erosion in FIG. 1. FIG. 3 is a conceptual plan view of an embodiment according to the present invention;
Figure 4 shows the state of the magnetic lines of force in Figure 3, Figure 5 shows the erosion state of the target in Figure 3, and Figure 6 shows the state of the target erosion in Figure 3.
The figure is a diagram showing how magnets are moved to increase usage efficiency in an applied form of the present invention. 10. Target 2°. Sputter power supply 4°. Magnet 5°. Magnetic field lines 6°. Sputter region 7. Spatter-free area and above Applicant Daini Seikosha Co., Ltd. Agent Patent Attorney Mogami Affairs Figure 2 Figure 3 Figure 4 Figure 5

Claims (2)

[Claims] (1) A magnetron sputtering device characterized in that a plurality of magnets arranged on the back side of a target are arranged so that adjacent poles are opposite to each other. (2) The magfutron sputtering apparatus according to claim 1, wherein the plurality of magnet pairs are movable relative to the target.