JP2002363740A - Plasma treatment device for sputtering film deposition - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a capacity-coupling type plasma treatment device for sputtering film deposition in which ion flux is uniformly deposited on a surface of a substrate at high concentration, but not re-deposited on a target. SOLUTION: The plasma treatment device comprises an upper electrode 1 having a capacity-coupling type mechanism, a target member 2 fitted to the upper electrode and formed of a non-magnetic substance, a plurality of magnets 6 which are disposed on an upper surface of the target member having alternately changing polarity at equal intervals between the two magnets, a lower electrode 3 disposed parallel to the upper electrode, a wafer 17 mounted on the lower electrode, and a high frequency power source 16 which is operated at the frequency in a range of 10-300 MHz, and connected to the upper electrode via a matching circuit 15.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma processing apparatus for sputter film forming applications, and more particularly to a high frequency (HF) useful for sputter processing of a metal or a dielectric material during an integrated circuit manufacturing process in the semiconductor industry. Or a plasma assisted sputtering apparatus having an improved plasma source capable of independently controlling the plasma ion density and ion energy at the VHF) electrode.

[0002]

2. Description of the Related Art A large-area high-density plasma source having high radial uniformity requires a large-area substrate to be processed without causing charge-induced damage to devices mounted on the surface of the substrate. Have been. In particular, it is important to develop a new plasma source for sputtering metal and dielectric materials with high uniformity of the deposited film. The difficulties in obtaining the above characteristics in a conventional plasma source are illustrated using two conventional configurations, as shown in FIGS. 6-9, which are typically associated with a 200 mm wafer or flat panel plasma. Applied in processing equipment.

FIG. 6 shows a simplified conventional magnetron-type plasma source used for sputter deposition applications in the semiconductor industry. The reaction vessel 101 comprises an upper electrode 102 made of a non-magnetic metal, a cylindrical side wall 103, and a lower electrode 104. The upper electrode 102 forms the ceiling plate of the reaction vessel 101, and the lower electrode 104
01 is provided on the bottom plate 105. Upper electrode 10
2 and the lower electrode 104 are parallel to each other over at least a part of the reaction vessel 101. Side wall 103 and bottom plate 10
5 is made of a metal such as stainless steel, for example.
The side wall 103 and the bottom plate 105 are grounded. Side wall 103
The upper part extends upwardly to create a chamber outside the reaction vessel. The side wall 103 has a dielectric ring 106. A target plate 107 made of a material that needs to be sputtered is fixed to the lower surface of the upper electrode 102. Usually, the target plate 107 is the upper electrode 1
It has dimensions that are slightly smaller than 02.
The combined structure of the upper electrode 102 and the target plate 107 is placed on a dielectric ring 106 to provide electrical insulation from the rest of the reaction vessel 101.
On the upper surface of the upper electrode 102, two magnets 108A and 108B having a circular shape and a ring shape are arranged in a concentric positional relationship as shown in FIGS. 2
The two magnets 108A and 108B are fixed to the upper electrode 102, and a plate 121 used as a magnetic path is disposed on the two magnets 108A and 108B. The central magnet 108A has a cylindrical shape and does not have any cavities as shown in FIG. The outer magnet 108B has a ring shape. The height and width of each of the magnets 108A, 108B is not critical and is selected according to other dimensions of the reaction vessel 101. The magnets 108A and 108B are arranged on the upper electrode 102 so as to have opposite polarities toward the inside of the reaction vessel 101. Magnet 108
The arrangement of A, 108B creates a curved magnetic field 109 between these two magnets.

The upper electrode 102 is connected via a matching circuit 111 to a high-frequency power supply 110 operating at a frequency in the range of 0.1 MHz to 300 MHz. High frequency power supply 11
The frequency of 0 is usually 13.56 MHz. When a high frequency power supply powers the upper electrode 102, plasma is generated by a capacitively coupled mechanism. Once the plasma is created, the electrons in the plasma are trapped in a curved magnetic field, which results in an increase in the plasma density in that region.

[0005] The substrate 112 is disposed on the lower electrode 104, and the lower electrode is interposed between the bottom plate 105 and the insulating material 113.
Electrically insulated from The lower electrode 104 may or may not be supplied with high-frequency power from a high-frequency power supply. If high frequency power is to be provided by the high frequency power supply 114 to the lower electrode 104 via the matching circuit 115, the frequency of the high frequency power supply will typically be in the range of 0.1 MHz to 30 MHz, as shown in FIG. When a high frequency current is applied to the lower electrode 104, it is negatively biased and thus causes ion bombardment on the surface of the substrate 112. Ion collision on substrate 1
The self-bias voltage of the lower electrode 104 is controlled such that the film deposition rate exceeds the film etching rate on the substrate 112, although it causes etching on the film deposited on the substrate 12.

Another conventional magnetron-type sputter source shown in FIG. 8 is a slight modification of the aforementioned plasma source provided in FIG. Here, the center magnet 108
A is arranged in an off-axis mode to form an asymmetric magnetic field 109 below the upper electrode 102.
A plan view of this magnet arrangement is shown in FIG. The configuration of this magnet is rotated about the central axis of the upper electrode 102 (shown as dotted line 116 in the figure). Magnets 108A, 1 shown in FIGS. 8 and 9
The arrangement of magnets formed by 08B rotates asymmetrically.

[0007]

The parallel plate type plasma reactor shown in FIG. 6 has a large area plasma between parallel electrodes, easy ignition of plasma, and controllability of plasma ion energy on the lower electrode surface. It has several advantages. When the magnet arrangement given in FIG. 6 is used, a donut-shaped bent magnetic field is generated below the upper electrode 102. Once the plasma is ignited, a higher density plasma in the form of a donut is formed below the upper electrode 102 by the confinement effect of the electron's magnetic field. Since this higher density plasma is primarily confined in the region between the poles of the magnets 108A, 108B, there is a lower plasma density near the magnet poles.

Further, the strength of the magnetic field increases in the direction of the magnetic pole. This causes a mirror reflection of electrons, which causes a low electron density at the magnetic poles of the magnets 108A and 108B. When the electron density is low, the ion density is also low, as the ions are trapped in the plasma by the electrostatic field created by the electrons.

As mentioned above, the flow of ions at the pole is smaller for two reasons, resulting in a lower sputtering rate. However, since high-density plasma exists in the form of a donut between the magnetic poles of the magnets 108A and 108B, the surface of the target plate 107 corresponding to the region between the two magnets is strongly sputtered. Some of these sputtered atoms are reflected back in the original direction due to scattering by gas molecules, and redeposit on the target plate 107. The deposition of sputtered atoms at these locations is dominant because the sputtering rate is relatively small at the locations of the target plate surface corresponding to the magnetic poles.
However, the redeposited film has a low density and loosely adheres to the target plate 107, so that it easily breaks off as particles. Furthermore, the efficiency of target utilization is greatly reduced due to the etching of only the donut shaped regions.

To avoid redeposition of sputtered material on target plate 107, magnets 108A and 108B are arranged asymmetrically and rotated about central axis 116 of the upper electrode, as shown in FIG. . Even if there is redeposition of sputtered material at the location corresponding to the pole, the redeposited film is immediately sputtered back into the plasma due to rotation of the magnet.
Thus, the source of particles in the plasma is eliminated.

[0011] However, the plasma generated with the configuration given in FIG. 8 is non-uniform in the radial direction. This causes a non-uniform ion flow over the surface of the substrate 112. This causes a local charge build-up on the substrate surface, especially if the substrate 112 is negatively biased by applying high frequency power to the And finally results in electrical breakdown of submicron devices.

It is an object of the present invention to provide a higher ion concentration and higher ion flux (f) at the surface of a wafer or substrate.
lux) and provide a magnetically enhanced capacitively coupled plasma processing apparatus for sputter deposition applications that does not cause redeposition due to return of sputtered material to the target member. It is in.

[0013]

SUMMARY OF THE INVENTION A plasma processing apparatus for sputter deposition according to the present invention includes a reaction vessel, an upper electrode, a target member, a plurality of magnets, and a high frequency power supply. The reaction vessel has a gas inlet and a vacuum exhaust outlet. The upper electrode has a capacitive coupling mechanism and is provided in the reaction vessel. The target member is made of a non-magnetic substance and is attached to the upper electrode. A plurality of magnets are provided above the upper surface of the target member, are provided in a cavity between the upper electrode and the target member, have an equal distance between the two, and have alternating polarities. The lower electrode is arranged in the reaction vessel parallel to the upper electrode, and the wafer (or substrate) to be processed is mounted on the lower electrode. High frequency power supply is 10MHz to 300MHz
And is connected to the upper electrode via the matching section. In the above-described plasma processing apparatus for sputter deposition, preferably, the plurality of magnets are rotated by a rotation mechanism around the center axis of the upper electrode. In the above-described plasma processing apparatus for sputtering film forming application, preferably, the rotation mechanism includes a motor, a first gear device connected to the motor, a second gear device provided on a sheet provided with a magnet, and First
And a rod made of an insulating material connecting the second gearing. In the plasma processing apparatus for sputter deposition application, preferably, the upper electrode is connected to a direct current (DC) power supply via a high frequency cutoff filter. In a plasma processing apparatus for sputter deposition application, preferably, the upper electrode is connected to a second high-frequency power supply via a matching section. In a plasma processing apparatus for sputter deposition application, preferably, the height of the magnet disposed above the upper surface of the target member is changed in the radial direction. In a plasma processing apparatus for sputter deposition application, preferably, the strength of a magnet disposed above the upper surface of the target member is changed in the radial direction.

According to the above-described structure of the present invention, a magnetically enhanced capacitively coupled plasma is maintained below the target member. Many magnets (clust
er) to provide a point cusp magnetic field (magnetic field), so that there is a higher magnetic field strength near the target member, which results in a higher plasma density. The wafer is in an environment without a magnetic field because the magnetic field rapidly weakens toward the lower electrode where the wafer is located. This makes it easier to apply high-frequency power to the lower electrode for the purpose of applying a negative bias voltage to the wafer. In addition, the rotation of the magnet arrangement prevents sputtered atoms from redepositing on the target and makes the erosion shape of the target nearly uniform.

[0015]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments will be described below with reference to the accompanying drawings. Details of the present invention will be made clear through the description of the embodiments.

A first embodiment of the present invention will be described with reference to FIGS. 1 and 2 show views of a plasma source used for the plasma processing apparatus of the first embodiment. FIG. 1 shows a cross-sectional view of a plasma processing apparatus, and FIG. 2 shows a magnet arrangement.

In the above-described plasma processing apparatus, the reaction vessel 50 includes the upper electrode 1, the target member 2, the lower electrode 3, the cylindrical side wall 21, and the ceiling plate (top plate) 22.
a, a bottom plate (bottom plate) 22 b, and a wafer holder 23. The target member 2 is provided on the surface of the upper electrode 1. The plurality of magnets 6 are provided in a cavity 13 above the upper surface of the target member 2 and between the upper electrode 1 and the target member 2. Further, the reaction vessel 50 has a gas introduction unit 4 and a vacuum exhaust unit 5. The evacuation unit 5 is connected to a vacuum pump (not shown).

The upper electrode 1 is made of, for example, Al (aluminum).
And is disposed on a ring 14a made of a dielectric material, for example, ceramic.
The upper electrode 1 has a circular shape. The dimensions of the upper electrode 11 are not critical and depend on the size of the substrate to be processed. The cylindrical side wall 21, the ceiling plate 22a, and the bottom plate 22b are made of metal and are electrically grounded.

The target member 2 is made of a metal such as copper, for example, and needs to be sputtered.
7 is deposited on the surface. The wafer 17 is mounted on the lower electrode 3 provided on the wafer holder 23. The target member 2 is strongly fixed to the upper electrode 1 by, for example, bolts or diffusion bonding. The shapes of the upper electrode 1 and the target member 2 are designed such that a cavity 13 exists between the upper electrode 1 and the target member 2.
The diameters of the upper electrode and the target member are not important, and are selected depending on the diameter of the wafer 17. For example,
If the diameter of the wafer is 200 mm, the diameter of the target is in the range from 200 mm to 350 mm. The thickness of the target member 2 below the magnet 6 is likewise not critical and is usually of the order of 15 mm.

The arrangement of the magnets 6 in the cavity 13 between the upper electrode 1 and the target member 2 is shown in FIG. The plurality of magnets 6 are fixed to the circular sheet 7. The magnets 6 are arranged at an equal distance from each other and have alternating polarities. The spacing between any two adjacent magnets 6 is not important,
It can vary from 10 mm to 50 mm. The dimensions of each magnet are the same. The cross-sectional shape of the magnet 6 is square or circular. If the cross-sectional shape is a circular shape, its diameter can vary from 5 mm to 40 mm. If the cross-sectional shape is a square shape, equivalent dimensions are employed. Magnet 6
Is not critical and can range from 5 mm to 30 mm. Further, the magnetic field 2 of the magnet 6
The strength of 4 is also not important. Usually, the strength of the magnet 6 is about 1 at the lower surface of the target member 2.
It is selected to produce a magnetic field strength between 00 Gauss and 600 Gauss.

When the magnets 6 are arranged on the target member 2 as described above, the magnetic field lines 24 emanating from either pole immediately bend towards the nearest opposite pole. Therefore, this magnet arrangement creates many point cusp fields. Since the magnets 6 are arranged close to each other, the magnetic field line 24 bends at a short distance from the magnet 6. Therefore, this magnet arrangement creates a strong magnetic field 24 near the inner region of the target member 2 and decays very quickly towards the lower electrode 3. Therefore, by maintaining an appropriate distance between the target member 2 and the lower electrode 3, it is possible to obtain an environment that is not restricted by a magnetic field on the surface of the lower electrode 3.

One pole of each magnet 6 is attached to a sheet 7, which is preferably made of metal. The other magnetic pole of each magnet 6 faces the inside of the plasma processing reaction vessel 50. The sheet 7 to which the magnet 6 is attached is located inside the cavity 13 between the upper electrode 1 and the target member 2 and is fixed with a support for the bearing 8. The sheet 7 can be rotated about one central axis of the upper electrode. Furthermore, a small gap between the lower surface of the magnet 6 and the upper surface of the target member,
Preferably, it is provided so as to have an interval of about 1 mm. In order to rotate the seat 7 provided with the plurality of magnets 6, the upper surface of the seat 7 is provided with a suitable gear device 10a,
It is connected to the motor 9 via 10b. The gearing 10a, 10b on the upper surface of the seat 7 is connected by a rod 11 made of an insulating material. This is important for removing high-frequency current flowing through the motor 9 and the magnet 6. A rod 11 made of an insulating material is passed through a small hole 12 formed in the upper electrode 1. The diameter of the small hole 12 made in the upper electrode 1 is made as small as possible to prevent high-frequency current from flowing through the cavity between the upper electrode 1 and the target member 2. The magnet arrangement including the sheet 7 is rotated at a predetermined frequency, usually about 5 to 10 Hz. The motor 9 is preferably arranged outside the side wall 21 of the reaction vessel 50 and is operated by DC or AC current. Although the magnet array is rotated as described above, other different techniques can be used to rotate the magnet array,
For example, some kind of magnetic coupling can be used that can omit the use of small holes 12.

The composite structure including the upper electrode 1, the target member 2, and the magnet arrangement is a dielectric ring 14A,
By arranging 14B, it is electrically insulated from other parts of the reaction vessel 50. The upper electrode 1 is a matching circuit 1
5 is connected to a high-frequency power supply 16. The frequency of the high frequency power supply 16 is not critical and can be in the range of 10 MHz to 300 MHz.

The lower electrode 3 is connected to a high frequency power supply 18 via a matching circuit 19. The lower electrode 3 is supplied with high frequency power from a high frequency power supply 18. The frequency of the high frequency power supply 18 is not important, and is 0.1 MHz to 300 MHz.
It can be changed in the range of z. High frequency power supply 18
Can be omitted. If no high-frequency power is applied to the lower electrode 3, the electrical state of the lower electrode 3 is in a floating state or a ground state. The exact electrical state of the lower electrode 3 is determined by the processing technique for each wafer.

As shown in FIG. 1, there is a gas introduction device for the plasma processing counter-container 50. A circular pipe 20 having a plurality of gas inlets 4 is fixed to the inner surface of the side wall 21.
However, different techniques for introducing the process gas into the reaction vessel 50 can be employed.

When high-frequency power is applied from the high-frequency power supply 16 to the upper electrode 1, a high-frequency current flows to the lower surface of the target member 2, and plasma is generated by a capacitive coupling mechanism. Due to the magnetic field 24 in the vicinity of the target member 2, electrons in the plasma rotate in a cyclotron and are confined by approaching the target member 2. This has the consequence of increasing the plasma density. Since the magnet 6 is provided to create a plurality of bent magnetic fields 24 through the lower surface of the target member 2, a high density plasma is generated in each set of bent magnetic field lines 24. Depending on the number of magnets 6 provided, the number of local high-density plasma sites changes. By adjusting the number of magnets 6 approaching each other, the total number of high-density plasma generation sites can be increased. Therefore, the average plasma density below the target member 2 can be greatly increased compared to those of the conventional plasma sources described in the background section.

In the production of the plasma, the target member is negatively biased, which means that the surface area of the target member 2 is
This is because the area becomes smaller than the area of the grounded surface with which the plasma is in contact. Due to the negative self-bias voltage, the ions in the plasma accelerate toward the target member 2 and gain energy to collide with the target 2.
This sputters the target member 2 and the sputtered material goes to the plasma. Some of the sputtered atoms from the target member 2 pass through the plasma and deposit on the surface of the wafer 17. Another part of the sputtered atoms deposits again on the target member 2, which is due to scattering in the gaseous state.
The remaining sputtered atoms deposit on the cylindrical sidewall 21 exposed to the plasma, and other surfaces.

Once the plasma is generated below the target member 2, electrons and ions near the target member 2 are driven by E × B. Here, E and B are a DC electric field and a magnetic field on the target surface, respectively. However, the ExB drift of this plasma is locally present in a smaller area defined by the spacing of the magnets 6. This is because the magnet 6 is provided so as to eliminate the E × B drift of the adjacent magnet. This magnet arrangement therefore produces an almost radially uniform plasma by a diffusion process at a few cm below the target member 2. Furthermore, due to the rotation of the magnet 6, there are no redeposition sites on the target member 2. This also results in an almost uniform erosion of the target member 2, which results in increased target utilization.

As described above, no magnetic field exists on the surface of the lower electrode. Therefore, the high frequency power supplied from the high frequency power supply 18 is applied to the lower electrode 3 without disturbing the plasma uniformity on the wafer surface. If a magnetic field is present at the surface of the wafer, the plasma moves toward the other side of the reaction vessel 50 due to the E × B drift, where E and B are the DC and magnetic field strength at the wafer surface, respectively. It is. By applying the appropriate high frequency power to the bottom electrode, its self-bias voltage is changed, thereby changing the energy of ions impacting the surface of the wafer.

The plasma processing apparatus according to the first embodiment can generate a high-density plasma under the target member as compared with those of the conventional plasma source. It can facilitate sputter deposition of a metal film on a wafer with a uniform deposition rate and a uniform erosion rate of the target member. Furthermore, it facilitates independent control of the plasma density (or ion flux) and the energy of the ions impinging on the wafer surface by controlling the high frequency power applied to each of the upper electrode 1 and the lower electrode 2. Can be.

Next, a second embodiment of the present invention will be described with reference to FIG. This embodiment is an extension of the first embodiment. The upper electrode 1 in the second embodiment is a high-frequency power supply 16
, And a DC bias voltage from the DC power supply 25 is supplied. This DC power is supplied via a high frequency cutoff filter 26, which protects the DC power supply 25 from high frequency current from the high frequency power supply 16. Except for this added structure, all other configurations are the same as those described in the first embodiment. The other components shown in FIG. 3 that are substantially the same as those described in the first embodiment are each provided with the same reference numerals.

In the second embodiment, the application of a negative DC voltage greater than the self-bias voltage created by the plasma results in an increase in the sputtering rate of the target member 2. This results in an increase in the deposition rate on the surface of the wafer 17.

A third embodiment will be described with reference to FIG. The third embodiment is also an extension of the first embodiment. The upper electrode 1 in this embodiment is supplied with another high-frequency current from a second high-frequency power supply 27 via a matching circuit 28. With the application of the second high-frequency current to the upper electrode 1, two high-frequency filters 29 and 30 are added to the electric circuit. The high frequency filter 29 cuts off the high frequency current coming from the high frequency power supply 16, and the high frequency filter 30 cuts off the high frequency current coming from the high frequency power supply 27. Except for this modification, all other components are the same as those described in the first embodiment.

The frequency of the second high frequency power supply 27 is lower than that of the basic high frequency power supply 16, and is preferably 0.1
It is in the range from 30 MHz to 30 MHz. The application of a lower high frequency alternating current from the second high frequency power supply 27 causes an increase in the self-bias voltage on the target member.
This causes a higher sputtering rate of the target member 2, thereby resulting in a higher deposition rate on the surface of the wafer.

The fourth embodiment will be described with reference to FIG.
This embodiment is also an extension of the above embodiment. That is, the hardware configuration of the fourth embodiment is the same as that of each embodiment except for the arrangement of the magnets. Since only the magnet arrangement has been changed, only the magnet arrangement is shown in FIG. FIG. 5 shows a side view of the plurality of magnets and the sheet 7.

Except for the height of each magnet 6, the other dimensions of the magnet, the strength of the magnet, and the distance between the magnets are the same as those described in the first embodiment. The height of the magnet 6 is changed in the radial direction. For example,
The height of the magnet 6 becomes shorter toward the center of the sheet 7 or toward the target member 2 as shown in FIG. As another method, the height of the magnet 6 can be changed. For example, the height of the magnet is sheet 7
May be shortened toward the outer edge of the. The criteria for the change in magnet height are as follows.

When a magnetic field 24 is present, as described in the first embodiment, the plasma density increases and the plasma becomes confined within the region of the magnetic field 24.
The increase in plasma density and the strength of confinement vary depending on the strength of the magnetic field. Therefore, by changing the height of the magnet, the strength of the magnetic field below the target member 2 is changed, thereby changing the plasma density and the plasma confinement. That is, the height of the magnet can be treated as controlling the parameter of the plasma density near the target member. Depending on the type of wafer process, the applied power, and the pressure employed, changing the radial profile of the plasma density in the vicinity of the target member 2 to obtain a uniform film on the wafer surface is not possible. is important. In these situations, the height of the magnet is appropriately varied as described above to obtain a uniform film on the wafer.

Similarly, by selecting magnets with different strengths of the magnetic field, it is possible to vary the strength of the magnetic field 24 below the target member 2 by arranging them in a radially symmetric pattern. it can.

[0039]

According to the plasma processing apparatus of the present invention, a high-density plasma can be generated under the target member by generating a large number of point cusp magnetic fields by using a plurality of magnets having a predetermined arrangement. The plasma processing apparatus of the present invention can easily perform sputtering deposition of a metal film on a wafer at a uniform deposition rate and a uniform erosion rate of a target member. It can easily perform independent control of plasma density (or ion flux) and ion energy hitting the wafer surface by controlling the high frequency power applied to each of the upper and lower electrodes. The present invention is magnetically enhanced for sputter deposition applications by having a higher ion concentration at the substrate surface, higher ion flux uniformity, and not causing redeposition of sputtered material back to the target member. And a capacitively coupled plasma processing apparatus.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view of a first embodiment showing a capacitively coupled electrode, a target member, and a magnet arrangement.

FIG. 2 shows a magnet arrangement used in the first embodiment.

FIG. 3 is a longitudinal sectional view of the second embodiment.

FIG. 4 is a longitudinal sectional view of a fourth embodiment.

FIG. 5 is a side view of a sheet and a magnet according to a fourth embodiment.

FIG. 6 is a schematic diagram showing a first conventional plasma source used for plasma processing.

FIG. 7 is a top view of the upper electrode shown in FIG. 6;

FIG. 8 is a schematic diagram showing a second conventional plasma source used for plasma processing.

FIG. 9 is a top view of the upper electrode shown in FIG.

[Description of reference numerals]

 DESCRIPTION OF SYMBOLS 1 Upper electrode 2 Target plate 3 Lower electrode 6 Magnet 17 Wafer 21 Cylindrical side wall 21b Bottom plate 23 Wafer holder 50 Reaction vessel

 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Hanako Nagahama 5-8-1, Yotsuya, Fuchu-shi, Tokyo Inside Anelva Co., Ltd. (72) Inventor Makoto Sato 5-81-1, Yotsuya, Fuchu-shi, Tokyo Anelva (72) Inventor Shigeru Mizuno 5-8-1, Yotsuya, Fuchu-shi, Tokyo Anelva Corporation F-term (reference) 4K029 BA08 BC03 BD01 CA05 DC03 DC42 DC43 EA09 5F103 AA08 BB06 BB09 BB14 NN10 RR04

Claims (7)

[Claims] A reaction container having a gas introduction unit and a vacuum exhaust unit; an upper electrode provided in the reaction container and having a capacitive coupling mechanism; and a target member made of a non-magnetic substance attached to the upper electrode. Provided above the upper surface of the target member and in a cavity between the upper electrode and the target member,
A plurality of magnets arranged to have an equal distance between the two and alternating polarities; a lower electrode parallel to the upper electrode in the reaction vessel, on which a wafer to be processed is mounted; and Connected to the upper electrode through a matching section from 10 MHz to 300 M
A high-frequency power supply operating at a frequency in the range of Hz, and a plasma processing apparatus for sputter deposition application. 2. The plasma processing apparatus according to claim 1, wherein the plurality of magnets are rotated around a central axis of the upper electrode by a rotation mechanism. 3. The rotating mechanism connects a motor, a first gear device connected to the motor, a second gear device provided on a seat provided with the magnet, and the first and second gear devices. 3. The plasma processing apparatus according to claim 2, comprising a rod made of an insulating material. 4. The plasma processing apparatus according to claim 1, wherein the upper electrode is connected to a DC power supply via a high-frequency cut-off filter. . 5. The plasma processing for sputter deposition according to claim 1, wherein the upper electrode is connected to a second high-frequency power supply via a matching section. apparatus. 6. The sputter film forming application according to claim 1, wherein the height of the magnets arranged on the upper surface side of the target member changes in a radial direction. Plasma processing equipment. 7. The method according to claim 1, wherein the strength of the magnets arranged on the upper surface of the target member changes in a radial direction. Plasma processing equipment.