WO2009048075A1 - Plasma processing apparatus - Google Patents

Plasma processing apparatus Download PDF

Info

Publication number
WO2009048075A1
WO2009048075A1 PCT/JP2008/068296 JP2008068296W WO2009048075A1 WO 2009048075 A1 WO2009048075 A1 WO 2009048075A1 JP 2008068296 W JP2008068296 W JP 2008068296W WO 2009048075 A1 WO2009048075 A1 WO 2009048075A1
Authority
WO
WIPO (PCT)
Prior art keywords
processing apparatus
electrode
plasma processing
magnets
distance
Prior art date
Application number
PCT/JP2008/068296
Other languages
French (fr)
Japanese (ja)
Inventor
Eisaku Watanabe
Masayoshi Ikeda
Yohsuke Shibuya
Original Assignee
Canon Anelva Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Anelva Corporation filed Critical Canon Anelva Corporation
Publication of WO2009048075A1 publication Critical patent/WO2009048075A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3455—Movable magnets

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

A plasma processing apparatus is provided with a processing chamber which can be vacuum-exhausted; a first electrode arranged inside the processing chamber; a plurality of magnets arranged on the first electrode with polarities arranged reversely between the adjacent magnets; and a second electrode arranged to face the first electrode. The plasma processing apparatus is also provided with a distance adjusting mechanism for adjusting a distance between the magnets and the first electrode.
PCT/JP2008/068296 2007-10-10 2008-10-08 Plasma processing apparatus WO2009048075A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007264510A JP2011026624A (en) 2007-10-10 2007-10-10 Plasma processing apparatus
JP2007-264510 2007-10-10

Publications (1)

Publication Number Publication Date
WO2009048075A1 true WO2009048075A1 (en) 2009-04-16

Family

ID=40549219

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/068296 WO2009048075A1 (en) 2007-10-10 2008-10-08 Plasma processing apparatus

Country Status (2)

Country Link
JP (1) JP2011026624A (en)
WO (1) WO2009048075A1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6604811B2 (en) * 2015-10-15 2019-11-13 株式会社大阪真空機器製作所 Method for manufacturing interference color decorative body, interference color decorative body, and magnetron sputtering apparatus for manufacturing interference color decorative body
CN108690962B (en) * 2017-04-06 2020-06-19 北京北方华创微电子装备有限公司 Magnetron sputtering equipment and magnetron sputtering deposition method
US10513432B2 (en) * 2017-07-31 2019-12-24 Taiwan Semiconductor Manufacturing Co., Ltd. Anti-stiction process for MEMS device
JP7255078B2 (en) * 2018-03-20 2023-04-11 日新電機株式会社 CLAMP MECHANISM AND SUBSTRATE HOLDING DEVICE INCLUDING THE CLAMP MECHANISM
JP6533911B1 (en) * 2018-05-18 2019-06-26 Tsk株式会社 Electromagnetic induction heating device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05202471A (en) * 1992-01-28 1993-08-10 Fujitsu Ltd Magnetron sputtering apparatus
JPH06887U (en) * 1992-06-19 1994-01-11 八千代工機株式会社 Adjusting metal fittings for insulators for train lines
JP2002363740A (en) * 2001-06-01 2002-12-18 Anelva Corp Plasma treatment device for sputtering film deposition

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05202471A (en) * 1992-01-28 1993-08-10 Fujitsu Ltd Magnetron sputtering apparatus
JPH06887U (en) * 1992-06-19 1994-01-11 八千代工機株式会社 Adjusting metal fittings for insulators for train lines
JP2002363740A (en) * 2001-06-01 2002-12-18 Anelva Corp Plasma treatment device for sputtering film deposition

Also Published As

Publication number Publication date
JP2011026624A (en) 2011-02-10

Similar Documents

Publication Publication Date Title
WO2009078094A1 (en) Plasma processor
AU2011321202A8 (en) Juicer having juice extracting screw assembly
WO2009038897A3 (en) Nanowire battery methods and arrangements
WO2010111055A3 (en) Anchoring inserts, electrode assemblies, and plasma processing chambers
WO2010120423A3 (en) Field effect transistor having a plurality of field plates
WO2009006151A3 (en) Arrays of inductive elements for minimizing radial non-uniformity in plasma
WO2009048075A1 (en) Plasma processing apparatus
MY156154A (en) Shield stabilization configuration with applied bias
EP2030226A4 (en) Plasma etching chamber
WO2009012210A3 (en) Ethanol-producing microorganisms and methods of using
WO2008123357A1 (en) Plasma generating body and reaction apparatus
NZ615266A (en) Keypad
WO2009008474A1 (en) Plasma processing method and plasma processing apparatus
WO2012076230A9 (en) Sodium ion conductor on sodium titanate basis
WO2008097337A3 (en) Methods and apparatus for multiple part missile
WO2013156352A3 (en) Plasma roller
EP3948929A4 (en) Plasma reactors having recuperators
MX2016000634A (en) Optimised method for breaking chlorella cell walls by means of very high pressure homogenisation.
TW200745359A (en) Film-forming apparatus using sheet plasma
EP4048773A4 (en) Cell culture chamber with improved cell-contacting surfaces
EP2460774A4 (en) Monolithic chamber for forming floating glass, and construction method
WO2012098364A8 (en) Combination ion gate and modifier
WO2012050766A3 (en) Two-stage hydroprocessing apparatus and process with common fractionation
WO2012087919A3 (en) Methods and apparatus for gas delivery into plasma processing chambers
TWI801213B (en) Key structure

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08837838

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 08837838

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: JP