JPS6160880A - Spattering device - Google Patents

Abstract

PURPOSE:To obtain a titled device for raising a utilization factor of a target and improving the efficiency, by moving a magnetic flux of a magnet by a flux guide placed so as to be movable between the target and the magnet provided so as to be opposed to said target. CONSTITUTION:In a spattering device which has provided a plasma converging magnet 13 on the rear side of a cooling plate 12 placed closely to a target 11, a flux guide 14 is placed so as to be movable between said cooling plate 12 and the magnet 13. A magnetic flux emitted from one magnetic pole of said magnet 13 passes through the flux guide 14, reaches the surface of the target 11 and converges a plasma. In this case, said flux guide 14 is moved suitably as indicated with an arrow, a part where the plasma is converged is moved, and an erosion area of the target 11 is widened. In this way, a utilization factor of the target is improved to about >=30%.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a magnetron type sputtering apparatus with high target utilization.

Conventional configurations and their problems Traditionally, sputtering equipment uses a magnetron method to form thin films continuously at high speed and with little rise in substrate temperature. Continuously forming metal films etc. on the substrate
A conventional magnetron sputtering apparatus will be described below with reference to the drawings.

FIG. 1 is a sectional view showing the structure of a sputter gun of a conventional sputtering apparatus. In the figure, 1 is the target,
2 is a cooling plate on which the target 1 is placed closely; 3 is a plasma convergence magnet placed on the back surface of the cooling plate 2.

In the sputtering apparatus described above, the magnetic flux generated from the plasma focusing magnet 3 captures ionized electrons and secondary electrons generated by sputtering on the surface of the target 1, so the electron density on the surface of the target 1 increases, and these The probability of collision between electrons and neutral gas molecules increases, making it possible to increase the plasma density and reduce the sputtering rate by 1% compared to high-frequency bipolar sputtering equipment.
It can be made faster by several orders of magnitude, and because secondary electrons with high energy are trapped in a magnetic field, there is no thermal damage to the substrate on which the film is to be formed.

However, in the above sputtering apparatus, as shown in the figure, the distribution of the magnetic field generated on the surface of the target 1 is not uniform, and due to plasma convergence, the magnetic field on the surface of the target 1 between the poles of the magnet 3 is not uniform. The magnetic field will be the strongest and therefore this area will erode the fastest. FIG. 2 shows a perspective view of the target 1 in an eroded state, and FIG. 3 shows a sectional view taken along line AA' in FIG. 2. As can be seen from these figures, if the volume ratio of target 1 that actually contributes to film formation by sputtering is taken as the target utilization rate, the utilization rate is as low as about 20 to 25 cm in the case of a non-magnetic target. In the case of a ferromagnetic material, the magnetic flux concentrates in the eroded part, making the eroded shape even more difficult, and the utilization rate becomes even lower at 10 to 15%.

OBJECTS OF THE INVENTION The present invention eliminates the above-mentioned drawbacks and provides a sputtering apparatus that can use targets with high efficiency, such as a target utilization rate of 30 inches or more.

Structure of the Invention The basic groove formation according to the present invention includes a magnet for plasma convergence on the back side of a sputtering target, and a 7-lanox guide placed between the target and the magnet to move the magnetic flux generated from the magnet for plasma convergence through the flux guide. It was designed to move by.

DESCRIPTION OF EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. FIG. 4 is a sectional view showing the structure of a sputter gun of a sputtering apparatus in an embodiment of the present invention. In Fig. 4, 11 is the target, 12 is the target 11
13 is a plasma convergence magnet placed on the back side of the cooling plate 12, and 14 is the cooling plate 1.
2 and the plasma focusing magnet 13.

The operation of the snow tuttering device configured as described above will be explained below.The magnetic flux emitted from one magnetic pole of the plasma convergence magnet 13 is
4, some of it reaches the surface of the target 11, and some of it passes through the flux guide 14 and enters another magnetic pole. At this time, the magnetic field on the surface of the target 11 is strongest at the middle part of each flux guide 14, and as a result, the plasma is focused in this part, causing erosion of the target 11.

At this time, by moving the flux guide 14, the part where the magnetic field is strongest moves, so that the eroded part of the target 11 becomes wider.

According to this embodiment, by moving the flux guide 14 installed between the target 11 and the plasma convergence magnet 13, the eroded area of the target 11 is expanded, and the target utilization rate is increased to 36 Even with a ferromagnetic material of 1% or more, a very high utilization rate of about 30cm can be obtained.

Effects of the Invention As described above, in the present invention, since a movable flux guide is arranged between the target and the plasma convergence magnet, the eroded area of the target can be expanded, and the target utilization rate can be increased to 30% or more. The excellent effect of extremely high utilization efficiency can be obtained.

[Brief explanation of the drawing]

Figure 1 is a sectional view showing the structure of a sputter gun in a conventional sputtering device, Figure 2 is a perspective view showing the erosion state of a target used in a conventional sputtering device, and Figure 3 is a target used in a conventional sputtering device. FIG. 4 is a sectional view showing the structure of a sputtering gun of a sputtering apparatus in an embodiment of the present invention. 1111...Target, 2.12...
Cooling plate, 3.13...Plasma convergence magnet, 14...7 Lux guide. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
Figure 3 Figure 4

Claims (1)

[Claims] A sputtering apparatus comprising: a sputtering target; a plasma convergence magnet provided opposite the target; and a flux guide movably provided between the target and the magnet.