JPH11158625A - Magnetron sputtering film forming device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To enable the control and uniformization of film formation by changing the form of the distribution of the magnetic field on a target in the process of the coating formation in a magnetron sputtering coating forming device. SOLUTION: The space between a substrate 2 in a chamber 1 and a target 3 is applied with voltage by a DC power source 6 to generate discharge therebetween and to generate the lines of magnetic force on the target 3 by permanent magnets 7 provided at the lower part on the target cathode side including the target 3 and auxiliary permanent magnets 10 on the space between the magnetic poles of the permanent magnets 7, the discharge is made magnetron discharge to ionize a gas for discharge in the chamber 1, and the atoms of the target 3 are sputtered by the ionized positive ions to form coating on the substrate 2. In the process of this film formation, an actuator is driven, and the auxiliary permanent magnets 10 are rotated to change the direction of the magnetic poles 10, i.e., the form of the lines of magnetic force on the target 3 (the distribution of the magnetic field) is changed to control the film formation.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetron sputtering film forming apparatus for forming a substrate by a magnetron sputtering method, and more particularly, to a magnetron sputtering film forming method in which a magnetic field (magnetic field) on a target is varied to control the film formation. It concerns the device.

[0002]

2. Description of the Related Art In a magnetron sputtering film forming apparatus, a discharge gas ((inert gas)) flows into a vacuum chamber (vacuum chamber), and a voltage is applied between a cathode of a target placed in the vacuum chamber and an anode of a substrate. To generate a discharge (including a glow discharge) to ionize the inert gas, generate magnetic lines of force on the target, and use that discharge as a magnetron discharge. This generates high-density plasma on the target, collides the positive ions in the plasma with the target, sputters the atoms of the target, and deposits the sputtered atoms on the substrate to form a thin film. To form

As shown in FIG. 19, a substrate 2 and a target 3 of a film-forming material are arranged in the chamber 1 so as to face the substrate 2, the inside of the chamber 1 is set to a predetermined degree of vacuum, and a discharge gas is introduced. A predetermined voltage is applied by a DC power supply 6 between the electrode portion 4 holding the substrate 2 and the backing plate 5 holding the target 3. In this way, target 3
When a predetermined negative voltage is applied to the substrate 2 and the target 3
Discharge occurs between and.

A permanent magnet 7 and an auxiliary permanent magnet 8 for generating magnetic lines of magnetic force using the discharge as a magnetron discharge are provided below the target cathode including the target 3.
And the auxiliary permanent magnet 8 has the same polarity as the magnetic pole of the permanent magnet 7. Thus, the plasma a generated on the target 3 has a high density, and the high density plasma a
Positive ions collide with the target 3 and strike target particles into the chamber 1. The target particles fly in the chamber 1 and adhere to the substrate 2 on the positive side. As described above, the magnetron sputtering film forming apparatus can generate high-density plasma a even at a relatively low vacuum degree, thereby increasing the sputtering rate and the film forming speed of the substrate 2. Is an advantage.

[0005]

By the way, in the magnetron sputtering film forming apparatus, if the permanent magnet 7 and the auxiliary permanent magnet 8 are replaced with permanent magnets having different magnetic flux densities, the strength of the magnetic field on the target 3 is reduced. Can be changed,
That is, film formation can be controlled. That is, if the intensity of the magnetic field on the target 3 is changed, the shape of the plasma a changes, and accordingly, the shape of the erosion b changes, and the film formation distribution can be controlled. But,
During the deposition of the substrate 2, the permanent magnet 7 or the auxiliary permanent magnet 8
It is extremely difficult to replace the film, and therefore, the film distribution cannot be controlled by the method using a permanent magnet.

The present invention has been made in view of the above problems, and has as its object to change the magnetic field on a target during film formation on a substrate, thereby changing the shape of generated plasma. It is an object of the present invention to provide a magnetron sputtering film forming apparatus capable of controlling the film distribution and controlling the erosion shape of the target to control the uniformity of film formation.

[0007]

In order to achieve the above object, the present invention provides a method in which a target and a chamber in which a substrate is arranged opposite to the target are placed at a predetermined degree of vacuum, and a discharge gas is introduced thereinto. A magnetron sputter that causes a discharge between the substrates and turns the discharge into a magnetron discharge to ionize the gas, sputters the target atoms with the ionized positive ions, and forms the substrate with the sputtered atoms. In the film forming apparatus, in order to cause the magnetron discharge to generate high-density plasma on the target, a magnetic field generating means for generating magnetic field lines on the target is disposed on the sputtering cathode side including the target, The magnetic field generating means is at least alternately different in cross section of the device. And a plurality of auxiliary permanent magnets rotatable between the different magnetic poles, and the magnetic field distribution on the target is changed by rotation of the auxiliary permanent magnet to form a film on the substrate. It is characterized by being controllable.

According to the present invention, a discharge gas is introduced into a chamber in which a target and a substrate facing the same target are disposed at a predetermined degree of vacuum to generate a discharge between the target and the substrate. While ionizing the gas, sputtering the atoms of the target with the ionized positive ions,
In the magnetron sputtering film forming apparatus for forming the substrate by the sputtering atoms, in order to generate the high density plasma on the target by generating the magnetron discharge, a cylindrical shape and a lower part on the sputtering cathode side including the target. An auxiliary permanent magnet which is arranged at a cross section of the apparatus by disposing a columnar permanent magnet at the center of the cylinder to form alternately different magnetic poles, and which is rotatable between the cylindrical magnetic pole and the columnar magnetic pole; Are arranged along the outer circumference of the same cylindrical shape, and the magnetic poles of the plurality of auxiliary permanent magnets are configured to have the same or different polarities as the magnetic poles of the cylindrical and cylindrical permanent magnets. The film formation on the substrate can be controlled by changing a magnetic field distribution on the target by rotation of a magnet. In this case, it is preferable that the rotation mechanism of the permanent magnet is an actuator, and the permanent magnet and the actuator are movable.

According to the present invention, a discharge chamber is provided with a predetermined degree of vacuum inside a chamber in which a target and a substrate are disposed facing the target, a discharge is generated between the target and the substrate, and the discharge is converted into a magnetron discharge. In the magnetron sputtering film forming apparatus for sputtering the atoms of the target with the ionized positive ions and forming the substrate with the sputtered atoms, the magnetron discharge is caused to occur on the target by ionizing the gas. In order to generate high-density plasma, a permanent magnet consisting of a cylindrical shape and a cylindrical shape at the center of the cylindrical shape is arranged at the lower part of the sputtering cathode side including the target, and different magnetic poles are alternately formed in the cross section of the device. And a plurality of electromagnets between the cylindrical magnetic pole and the cylindrical magnetic pole. Arranged, the magnetic poles of the plurality of electromagnets are configured in the direction of the magnetic poles of the cylindrical and cylindrical permanent magnets, and the magnetic field distribution on the target is changed by changing the magnitude of the current of the electromagnets. It is characterized in that the film formation on the substrate can be controlled. In this case, it is preferable to provide a rotating mechanism for rotating the electromagnet, and to make the permanent magnet and the rotating mechanism movable.

[0010]

FIG. 1 is a block diagram showing an embodiment of the present invention.
This will be described in detail with reference to FIGS. In the figure, FIG.
The same parts as those described above are denoted by the same reference numerals, and redundant description will be omitted.
In the magnetron sputtering film forming apparatus of the present invention, when the auxiliary permanent magnet disposed at the lower portion of the target cathode is rotated (for example, when rotated by 180 degrees), the arrangement of the magnetic poles of the permanent magnet is changed. It changes (the magnetic field changes), and the shape of the plasma changes accordingly.

For this reason, as shown in FIG. 1, the magnetron sputtering film forming apparatus of the present invention replaces the auxiliary permanent magnet 8 shown in FIG. 19 between the magnetic poles of the permanent magnet 7 (between the S pole and the N pole). The auxiliary permanent magnet 10 which can be rotated is installed. The other configuration is the same as the conventional one, and thus the description is omitted. For example, as shown in FIG. 2, the permanent magnet 7 is constituted by a cylindrical magnet and a cylindrical magnet at the center of the cylindrical shape, and the auxiliary permanent magnet 10 is directed between the magnetic poles of the permanent magnet 7 toward the same magnetic pole. And a plurality (for example, eight) are arranged along the outer periphery of the columnar shape. Further, as shown in FIG. 3, the plurality of auxiliary permanent magnets 10 are rotated by 180 degrees along the solid arrows in FIG. 1, and the magnetic poles of the permanent magnet 7 and the adjacent auxiliary permanent magnet 10 become different.

As a rotating mechanism of the auxiliary permanent magnet 10, for example, an actuator 11 is used to rotate the auxiliary permanent magnet 10 in the direction of the solid line arrow in FIG. Further, it is preferable to provide a moving mechanism capable of moving in the horizontal direction (horizontal direction on the paper) and the vertical direction (vertical direction on the paper) on the auxiliary permanent magnet having a rotating mechanism. In addition, you may make it rotate the auxiliary permanent magnet 10 in a horizontal direction (horizontal direction of a paper surface). In this case, a mechanism that can be installed in the horizontal direction between the magnetic poles of the permanent magnet 7 is required.

Next, the operation of the magnetron sputtering film forming apparatus having the above configuration will be described. First, the substrate 2 is held by the electrode portion 3 of the substrate holder in a cantilever manner, the inside of the chamber 1 is set to a predetermined degree of vacuum, and the discharge gas ( (Inert gas) is introduced and adjusted to a predetermined pressure. When the inside of the chamber 1 has a predetermined gas pressure, a negative voltage is applied to the backing plate 5 of the target 3. Then, a discharge occurs between the substrate 2 and the target 3, and the DC power supply 6 is adjusted so that the discharge current is constant, that is, the discharge is stable and uniform.

Then, by the above-described discharge, a plasma composed of ionized positive ions and electrons is generated between the substrate 2 and the target 3, and the plasma is generated by the permanent magnet 7 and the auxiliary permanent magnet 10 below the target cathode side. Increase density. Positive ions in the high-density plasma strike the target and strike out atoms (film-forming material) of the target 7, and the blown-out sputtered atoms fly in the chamber 1 and adhere to the substrate 2 to form a film. To form Since the magnetron sputtering method is already known, a detailed description is omitted.

Here, the simulation and measurement results of the magnetic field distribution (magnetic flux density distribution) on the target 3 will be described with reference to FIGS.
When there is no 0, that is, when only the permanent magnet 7 is provided, the magnetic field lines in the simulation space shown in FIG. 4 have the results shown in FIG. In FIG. 4, a columnar one below the simulation space represents the N-pole and S-pole permanent magnets 7. In this case, 2 mm from the surface of the magnetic pole of the permanent magnet 7
When the magnetic flux density in the X direction at the positions of mm, 7 mm and 12 mm was measured, the result shown in FIG. 6 was obtained, and when the magnetic flux density in the Z direction was measured, the result was shown in FIG.

When the auxiliary permanent magnet 10 is arranged between the magnetic poles of the permanent magnet 7 and has the same polarity,
It is assumed that the poles, the N pole of the auxiliary permanent magnet 10, the S pole of the auxiliary permanent magnet 10, and the S pole of the permanent magnet 7 are arranged in this order. Then, the magnetic field lines in the simulation space shown in FIG. 8 have the results shown in FIG. In FIG. 8, a columnar one below the simulation space represents the N-pole and S-pole permanent magnets 7, and a cubic one represents the auxiliary permanent magnets 10. In this case, when measuring the magnetic flux density in the X direction at 2 mm, 7 mm, and 12 mm from the surface of the magnetic pole of the permanent magnet 7, the result shown in FIG. 10 is obtained.
When the magnetic flux density in the Z direction was measured, the result shown in FIG. 11 was obtained.

Further, when the auxiliary permanent magnet 10 is arranged between the magnetic poles of the permanent magnet 7 with a different polarity,
It is assumed that the poles, the S pole of the auxiliary permanent magnet 10, the N pole of the auxiliary permanent magnet 10, and the S pole of the permanent magnet 7 are arranged in this order. Then, the magnetic field lines in the simulation space shown in FIG. 12 have the results shown in FIG. FIG.
In the middle, the columnar one below the simulation space represents the N-pole and S-pole permanent magnets 7, and the cubic one represents the auxiliary permanent magnets 10. In this case, the permanent magnet 7
When the magnetic flux density in the X direction was measured at the positions of 2 mm, 7 mm, and 12 mm from the surface of the magnetic pole, the result shown in FIG. 14 was obtained, and when the magnetic flux density in the Z direction was measured, the result shown in FIG. 15 was obtained. In the graphs of FIGS. 6, 7, 10, 11, 14, and 15, the horizontal axis represents the position, the unit is mm, the vertical axis represents the magnetic flux density, and the unit is Gauss. is there.

From the above results, it is clear that the rotation of the auxiliary permanent magnet 10 not only changes the shape of the magnetic field lines on the target 3 but also changes the magnetic flux density. Therefore,
When the auxiliary permanent magnet 10 is set to the rotational position shown in FIG. 16, magnetic lines of force indicated by wavy arrows in FIG. 16 are generated, but the auxiliary permanent magnet 10 is rotated to a rotational position shown in FIG. 17 (a position rotated 180 degrees in the R-axis direction). Then, it changes to a wavy arrow in the same figure. Therefore, when the auxiliary permanent magnet 10 is rotated by 180 degrees during the formation of the substrate 2, that is, when the shape of the magnetic field lines on the target 3 is changed, the shape of the high-density plasma changes. For example, when the auxiliary permanent magnet 10 is in the state shown in FIG. 16, the plasma has a substantially circular cross section (see FIG. 1), but when the auxiliary permanent magnet 10 is rotated to the state shown in FIG. 17, the plasma follows the line of magnetic force. To change its shape.

As described above, by changing the shape of the plasma, the shape of the erosion b generated on the target 3 changes, and the film formation distribution of the substrate 2 changes, that is, the film formation distribution can be controlled. Uniformity can also be achieved. In addition, the erosion b has progressed in the thickness direction of the target 3, but has also progressed in the plane direction of the target 3. As a result, the progress in the thickness direction has decreased, and the change in the sputter impedance has accordingly been reduced. It will also suppress it.

If the auxiliary permanent magnet 10 and the actuator 11 are moved in the X-axis direction, the Y-axis direction, or the Z-axis direction by a moving mechanism, the magnetic field distribution changes, and the shape of the plasma can be changed. In combination with the rotation of the above, the shape of the plasma can be further changed. Further, when the auxiliary permanent magnet 10 is rotated not in the R-axis direction but in the horizontal direction (X-axis, Y-axis direction), the auxiliary permanent magnet 10 can be rotated at a predetermined angle. (Magnetic field distribution) can be generated, and the shape of the plasma can be varied in various ways. As a result, the film formation distribution of the substrate 2 can be controlled and the film formation can be made uniform.

FIG. 18 is a schematic partial sectional view illustrating a modification of the embodiment of the present invention. In this modification, an electromagnet 12 is used instead of the auxiliary permanent magnet 10. Electromagnet 12
If no current is supplied to the target 3, a permanent magnet 7
Only the lines of magnetic force are generated. Conversely, if a current is applied to the electromagnet 12, magnetic lines of force similar to those in the previous embodiment are generated on the target 3, and if the magnitude of the current is varied, the size of the magnetic lines (the strength of the magnetic field) is changed. Therefore, the size of the plasma is changed, and the film formation distribution of the substrate 2 can be controlled.

If the current of the electromagnet 12 is made to flow in the reverse direction, the same operation and effect as in the previous embodiment can be obtained. Further, similarly to the above-described embodiment, a rotating mechanism for rotating the electromagnet 12 forward and backward by 180 degrees in the R-axis direction (vertical direction on the paper) may be provided. A moving mechanism that can move in the Y-axis direction and the Z-axis direction may be provided. Then, not only can the shape of the plasma be changed in the same manner as in the previous embodiment, but also in combination with the variable current, the change in the shape of the plasma can be made more varied, and the film formation distribution of the substrate 2 can be controlled. And uniform film formation.

[0023]

As described above, according to the first aspect of the magnetron sputtering film forming apparatus, magnetron discharge is caused between the substrate and the target to generate high density plasma on the target. Magnetic field generating means for generating magnetic field lines on the target is disposed on the sputtering cathode side including the target, and the magnetic field generating means includes a permanent magnet that forms a plurality of magnetic poles that are alternately different at least in the cross section of the apparatus, It consists of a plurality of auxiliary permanent magnets rotatable between magnetic poles, and the rotation of the auxiliary permanent magnet changes the magnetic field distribution on the target to control the film formation on the substrate. In this case, the magnetic field distribution on the target is changed by rotating the auxiliary permanent magnet to change the direction of the magnetic pole, and the target erosion Both altering, it is possible to control the film formation, thus there is an effect that can be made uniform improvement in film formation substrate.

According to the second aspect of the present invention, in order to generate a magnetron discharge between the substrate and the target to generate a high density plasma on the target, a cylindrical lower portion on the sputtering cathode side including the target is formed. And an auxiliary permanent magnet which is arranged at a cross section of the apparatus by arranging a permanent magnet having a cylindrical shape at the center of the cylindrical shape, and which is rotatable between the cylindrical magnetic pole and the cylindrical magnetic pole. A plurality of magnets are arranged along the outer circumference of the same columnar shape, and the magnetic poles of the plurality of auxiliary permanent magnets are configured to have the same or different polarities as the magnetic poles of the cylindrical and cylindrical permanent magnets. Since the film formation on the substrate can be controlled by changing the magnetic field distribution on the target by the rotation of the permanent magnet, the direction of the magnetic pole can be changed by rotating the auxiliary permanent magnet during the film formation on the substrate. Since the magnetic field on the target can be changed and the shape of the generated plasma can be changed, the distribution of the film on the substrate and the shape of the erosion of the target can be changed to improve the uniformity of the film formation. effective.

According to the third aspect of the present invention, the rotating mechanism of the auxiliary permanent magnet is an actuator and the auxiliary permanent magnet and the actuator are movable in the first or second aspect. In addition to the above, parts such as an actuator are easily available and can be realized immediately, and by moving the auxiliary permanent magnet and the actuator, the magnetic field distribution on the target can be changed to various forms than in claim 1 or 2. Therefore, there is an effect that the control of film formation and the uniformity of film formation can be further improved.

According to the fourth aspect of the present invention, in order to generate a magnetron discharge between the substrate and the target to generate high density plasma on the target, a cylindrical shape and a lower part on the side of the sputtering cathode including the target are provided. A cylindrical permanent magnet at the center of the cylindrical shape is arranged to form alternately different magnetic poles in the cross section of the device, and a plurality of electromagnets are arranged between the cylindrical magnetic pole and the cylindrical magnetic pole. The magnetic poles of the plurality of electromagnets are arranged in the directions of the magnetic poles of the permanent magnets having the cylindrical shape and the columnar shape, and the magnitude of the current of the electromagnets is varied to change the magnetic field distribution on the target, thereby changing the magnetic field distribution on the target. Since the film formation can be controlled, the magnetic field on the target can be changed by changing the magnitude of the current of the electromagnet during the film formation on the substrate. It is possible to change the shape of Zuma, changing the film formation distribution and the target erosion shape of the substrate, there is an effect that can be made uniform improvement in film formation.

According to the fifth aspect of the present invention, in addition to the effect of the fourth aspect, a rotating mechanism for rotating the electromagnet is provided, and the permanent magnet and the rotating mechanism are movable. The distribution can be changed to various shapes as compared with the fourth aspect, and there is an effect that the control of film formation and the uniformity of film formation can be further improved.

[Brief description of the drawings]

FIG. 1 is a schematic sectional view for explaining an embodiment of a magnetron sputtering film forming apparatus of the present invention.

FIG. 2 is a schematic plan view of the magnetron sputtering film forming apparatus shown in FIG.

FIG. 3 is a schematic partial sectional view of the magnetron sputtering film forming apparatus shown in FIG.

FIG. 4 is a schematic diagram of a simulation space of lines of magnetic force for explaining the magnetron sputtering film forming apparatus shown in FIG.

FIG. 5 is a schematic simulation diagram of magnetic lines of force in the space shown in FIG. 4;

FIG. 6 is a schematic graph of the magnetic flux density in the X direction of the simulation configuration shown in FIG. 5;

FIG. 7 is a schematic graph of the magnetic flux density in the Z direction of the simulation configuration shown in FIG. 5;

FIG. 8 is a schematic view of a schematic simulation space of lines of magnetic force for explaining the magnetron sputtering film forming apparatus shown in FIG.

FIG. 9 is a schematic simulation graph of magnetic lines of force in the space shown in FIG. 8;

FIG. 10 is a schematic graph of the magnetic flux density in the X direction of the simulation configuration shown in FIG. 9;

FIG. 11 is a schematic graph of the magnetic flux density in the Z direction of the simulation configuration shown in FIG. 9;

FIG. 12 is a schematic diagram of a simulated space of lines of magnetic force for explaining the magnetron sputtering film forming apparatus shown in FIG. 1;

FIG. 13 is a schematic simulation graph of magnetic lines of force in the space shown in FIG. 12;

FIG. 14 is a schematic graph of the magnetic flux density in the X direction of the simulation configuration shown in FIG. 13;

FIG. 15 is a schematic graph of the magnetic flux density in the Z direction of the simulation configuration shown in FIG. 13;

16 is a schematic partial cross-sectional view of the magnetron sputtering film forming apparatus shown in FIG.

17 is a schematic partial cross-sectional view of the magnetron sputtering film forming apparatus shown in FIG.

FIG. 18 is a schematic partial cross-sectional view of a magnetron sputtering film forming apparatus for explaining a modified embodiment of the present invention.

FIG. 19 is a schematic sectional view of a conventional magnetron sputtering film forming apparatus.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Chamber 2 Substrate 3 Target 4 Electrode part 5 Backing plate 6 DC power supply 7 Permanent magnet (from a cylindrical shape and a cylindrical shape) 10 Auxiliary permanent magnet (rotatable) 11 Actuator (rotation mechanism) 12 Electromagnet (variable current) a Plasma b erosion

Claims (5)

[Claims] 1. A discharge gas is introduced into a chamber in which a target and a substrate disposed opposite to the target are placed at a predetermined degree of vacuum to generate a discharge between the target and the substrate, and the discharge is converted into a magnetron discharge. In the magnetron sputtering film forming apparatus that sputters the atoms of the target with the ionized positive ions and forms the substrate with the sputtered atoms, the magnetron discharge is caused to occur on the target by ionizing the gas. In order to generate high-density plasma, a magnetic field generating means for generating magnetic field lines is arranged on the target on the side of the sputtering cathode including the target, and the magnetic field generating means includes a plurality of magnetic field lines alternately different at least in the cross section of the apparatus. Rotating between a permanent magnet that constitutes a magnetic pole and the different magnetic pole And a plurality of auxiliary permanent magnet Noh, magnetron sputtering deposition system which is characterized in that to allow controlled deposition of the substrate by the rotation of the auxiliary permanent magnet to change the magnetic field distribution on the target. 2. A discharge gas is introduced into a chamber in which a target and a substrate disposed opposite to the target are disposed at a predetermined degree of vacuum to generate a discharge between the target and the substrate, and the discharge is converted into a magnetron discharge. In the magnetron sputtering film forming apparatus that sputters the atoms of the target with the ionized positive ions and forms the substrate with the sputtered atoms, the magnetron discharge is caused to occur on the target by ionizing the gas. In order to generate high-density plasma, a permanent magnet consisting of a cylindrical shape and a cylindrical shape at the center of the cylindrical shape is arranged at the lower part of the sputtering cathode side including the target, and different magnetic poles are alternately formed in the cross section of the device. An auxiliary comprising and rotatable between said cylindrical and cylindrical poles A plurality of permanent magnets are arranged along the outer periphery of the same columnar shape, and the magnetic poles of the plurality of auxiliary permanent magnets are configured to have the same or different polarities as the magnetic poles of the cylindrical and cylindrical permanent magnets, A magnetron sputtering film forming apparatus, wherein the film formation on the substrate can be controlled by changing a magnetic field distribution on the target by rotation of an auxiliary permanent magnet. 3. The magnetron sputtering film forming apparatus according to claim 1, wherein the rotating mechanism of the permanent magnet is an actuator, and the permanent magnet and the actuator are movable. 4. A discharge having a predetermined degree of vacuum in a chamber in which a target and a substrate are disposed opposite to the target is disposed inside, a discharge is generated between the target and the substrate, and the discharge is converted into a magnetron discharge. In the magnetron sputtering film forming apparatus, which ionizes the gas and sputters the atoms of the target with the ionized positive ions, and forms the substrate with the sputtered atoms, the magnetron discharge is caused to cause a high In order to generate density plasma, a permanent magnet consisting of a cylindrical shape and a cylindrical shape at the center of the cylindrical shape is arranged at the lower part of the sputtering cathode side including the target, and different magnetic poles are alternately formed in the cross section of the apparatus. And a plurality of electromagnets are arranged between the cylindrical magnetic pole and the cylindrical magnetic pole. Configuring the magnetic poles of the plurality of electromagnets in the direction of the magnetic poles of the cylindrical and cylindrical permanent magnets, changing the magnitude of the current of the electromagnets to change the magnetic field distribution on the target, and A magnetron sputtering film forming apparatus characterized in that film formation can be controlled. 5. The magnetron sputtering film forming apparatus according to claim 4, further comprising a rotating mechanism for rotating said electromagnet, and wherein said permanent magnet and rotating mechanism are movable.