KR100274433B1 - Sputtering apparatus and the same method - Google Patents

Abstract

The sputtering apparatus which performs sputtering using a rectangular target includes the rod-shaped first magnet provided along a pair of edges of the target 6, and the rod-shaped second magnet movably provided on the back side of the target.

Description

Sputter Device and Sputtering Method

The present invention relates to a magnetron sputtering device and a sputtering method which are one of thin film forming techniques.

The sputtering method is generally a method of forming a plasma by generating a gas discharge in a low vacuum atmosphere, and by adhering the plasma cations against a target installed on the cathode called cathode to adhere the sputtered particles to the substrate to form a thin film. This sputtering method is widely used in the thin film forming process because the composition control and the device operation are relatively easy to handle.

However, this sputtering method has a conventional disadvantage that the speed of thin film formation is slower than the vacuum deposition method. For this reason, a magnetron sputtering method for forming a magnetic field near a target by a magnetic circuit of a permanent magnet or an electromagnet has been devised, and this method improves thin film formation speed, and this sputtering in the manufacturing process of semiconductor parts, electronic parts, etc. The method enables mass production of thin films.

The above-mentioned magnetron sputtering method has a problem in that nonuniformity exists in thin film thickness and thin film quality due to local erosion of the target. In order to solve this problem, an apparatus for forming a uniform magnetic field perpendicular to the electric field has been devised.

20 is a configuration diagram of a sputtering apparatus of the prior art. In FIG. 20, the gas flow rates installed in the chamber 1, the vacuum outlet 2 of the chamber 1 for discharging air to the vacuum pump, the gas inlet pipe 3 for the chamber 1, and the gas inlet pipe 3. The controller 4 is shown. Reference numeral 5 denotes a discharge gas introduced into the chamber 1 from the gas inflow pipe 3, and argon gas is usually used as this gas. In the figure, the target 6, the sputter electrode 7, the discharge power source 8, the magnet holder 9, the magnet 10 and the substrate holder 11 are shown. Reference numeral 12 denotes a substrate on which a thin film is formed.

The operation of the sputtering device configured as described above will be described below. First, the air in the chamber 1 is discharged from the outlet 2 by a vacuum pump to about 10 ^-7 torr, and then the discharge gas 5 is connected to the gas inlet pipe 3 connected to one end of the chamber 1. It is introduced into the chamber (1) through to maintain the internal pressure of the chamber (1) at about 10 ^-3 to 10 ^-2 . When a negative voltage, that is, a high frequency voltage, is applied to the sputter electrode 7 in which the target 6 is located by a DC power source, that is, a high frequency sputter power source 8, a magnet built into the electric field in which the power source 8 is generated and the magnet holder 9 ( The plasma is formed by the electric discharge near the surface of the target 6 under the influence of the generated magnetic field 10, and a sputtering phenomenon occurs, thereby sputtering the particles discharged from the target 6, thereby causing the substrate 12 on the substrate holder 11. A thin film is formed on the.

However, according to the sputtering apparatus described above, when the target 6 is made of ferromagnetic material, most of the magnetic flux generated from the magnet 10 passes through the target 6, so that a very small amount of magnetic flux contributes to plasma formation. This causes a problem that the film formation rate is lowered.

In view of the above problem, Japanese Patent Laid-Open No. 61-124567, in the case of a target made of ferromagnetic material, provides a method for preventing a decrease in film formation speed by providing a magnet on the back of the target in addition to the magnet provided on the front of the target. I'm proposing. 21 shows the arrangement of the sputter electrodes when the magnets 10 and 13 are installed on the front and rear surfaces of the target 6. Here, reference numeral 13 denotes a magnet provided on the rear surface of the target 6. With this configuration, the target 6 is charged with the magnetic flux generated from the magnet 13 installed on its rear surface, thereby preventing the magnetic flux generated from the magnet 10 installed on the front of the target from passing through the target 6. As a result, in the target 6 made of ferromagnetic material, a decrease in film formation rate does not occur.

In the target made of ferromagnetic material by the above-described prior art configuration, the film formation speed can be improved, but since the magnetic flux is directed in the same direction over the entire target surface, the electrons in the plasma are in the same direction over the entire target surface. Force in the plasma, the density of electrons in the plasma is not uniform at the target surface and the erosion of the target proceeds rapidly in the direction in which the electron is applied, and gradually progresses in the opposite direction, so that the erosion is not uniform with the progress. The problem arises. This not only degrades the use efficiency of the target material considerably, but also causes a problem that the thickness of the thin film generated on the substrate surface cannot be made uniform.

Accordingly, an object of the present invention is to provide a sputtering apparatus and a sputtering method which can make the progress of target erosion almost uniform regardless of the magnetic material and can solve the problems of the prior art.

In achieving these and other objects, according to a first aspect of the present invention, there is provided a first magnet disposed to face an edge of a circular target, and a second disposed on a rear side of the circular target to perform circular motion. A sputtering apparatus is provided, wherein the sputtering apparatus is configured to perform sputtering using a circular target having a plurality of second magnets.

According to a second aspect of the present invention, there is provided a sputtering apparatus according to the first aspect, wherein polarities of the first magnets are defined so that the same poles face the center of the target, and the second magnet is the target of the first magnet. A sputtering device is provided in which a pole that is different from a center that is directed toward the back of the target is provided.

According to a third aspect of the present invention, there is provided a sputtering apparatus having a plurality of electromagnets arranged opposite to the edges of the circular target, the sputtering being performed using a circular target having a magnetic pole that changes over time.

According to a fourth aspect of the present invention, there is provided a sputtering apparatus according to the third aspect, wherein the electromagnet has an independently controllable magnetic pole oriented inward of the target.

According to a fifth aspect of the present invention, there is provided a sputtering apparatus according to the first or second aspect, wherein the electromagnets have four or more even numbers.

According to a sixth aspect of the present invention, there is provided a sputtering apparatus according to the first or second aspect, wherein the electromagnet is provided with respective coils provided on an atmospheric side of the vacuum chamber.

According to a seventh aspect of the present invention, sputtering is performed using the circular target in a state in which the first magnet is disposed opposite the edge of the circular target and the second magnet is movably disposed on the rear side of the target. A sputtering method performed; Sputtering while circularly moving the second magnet on the back side of the target, and changing the direction of the magnetic flux in time so that the plasma density is uniformly temporally on the target surface, wherein the second magnet is in a spiral motion. A sputtering method is provided.

According to an eighth aspect of the present invention, in the sputtering method according to the seventh aspect, the polarities of the first magnets are determined so that the same poles face the center of the target, and the second magnet is the target of the first magnet. A sputtering method is provided in which a pole different from a center toward the center is set to face the back of the target.

According to a ninth aspect of the present invention, there is provided a sputtering method for performing sputtering by using a circular target in a state in which a plurality of electromagnets facing edges of a circular target are arranged; Changing the direction of the magnetic flux by changing the magnetic poles of the electromagnets in time and changing the direction in which electrons in the plasma are subjected to a force to uniformize the plasma density on the target surface in a time-averaged manner. There is provided a sputtering method for performing sputtering.

According to a tenth aspect of the present invention, there is provided a sputtering method according to the ninth aspect, wherein the direction of magnetic flux is changed by changing the magnetic pole of the electromagnet in time, and the direction in which electrons in the plasma are subjected to a force is rotated by 360 °. A sputtering method is provided in which the plasma density on a target surface is uniformly time-averaged.

According to an eleventh aspect of the present invention, there is provided a first magnet disposed opposite the edge of the circular target and a second magnet disposed on the rear side of the circular target and capable of circular motion, wherein the second magnet is a spiral Provided is a sputtering apparatus for performing sputtering using a circular target for exercising.

According to a twelfth aspect of the present invention, in the sputtering apparatus according to the eleventh aspect, the polarities of the first magnets are determined so that the same poles face the center of the target, and the second magnet is the target of the first magnet. A sputtering device is provided in which a pole that is different from a center that is directed toward the back of the target is provided.

The above objects and features of the present invention will become apparent from the following detailed description of the preferred embodiments with reference to the accompanying drawings.

1 is a cross-sectional view of a sputtering apparatus for implementing the sputtering method according to the first embodiment of the present invention.

2 is a plan view showing a sputter electrode and a structure near the sputter device according to the first embodiment of the present invention.

3 is a cutaway view taken along line III-III of FIG.

4A, 4B and 4C show the motion of a magnet disposed on the back side of the target in the sputtering apparatus of the first embodiment.

5 is a graph showing the change of magnetic flux density with time at the target surface in the sputtering apparatus of the first embodiment.

6 is a cross-sectional view showing the shape of a target eroded by the sputtering apparatus of the first embodiment.

7a, 7b and 7c show the motion of a magnet disposed on the back side of the target in the sputtering device for implementing the sputtering method according to the second embodiment of the present invention.

8 is a view showing a sputter electrode and a structure near the electrode of the sputtering apparatus for implementing the sputtering method according to the third embodiment of the present invention.

9 is a cross-sectional view taken along the line IX-IX of FIG.

10 is a cross-sectional view showing the shape of a target eroded by the sputtering apparatus of the third embodiment.

11 is a plan view showing a sputter electrode and a structure near the electrode of the sputtering apparatus for implementing the sputtering method according to the fourth embodiment of the present invention.

12 is a plan view showing a sputter electrode and a structure near the electrode of the sputtering apparatus for implementing the sputtering method according to the fifth embodiment of the present invention.

FIG. 13 is a cross-sectional view taken along the line XIII-XIII of FIG. 12. FIG.

14A, 14B and 14C show changes over time in the direction in which the magnetic poles, the magnetic flux and the electrons in the plasma are subjected to a force in the sputter device of the fifth embodiment.

FIG. 15 shows the shape of a target eroded by the sputtering apparatus of the fifth embodiment.

16A, 16B, 16C, 16D, 16E, 16F, 16G, and 16H illustrate changes with time of stimulation of a sputtering apparatus for implementing a sputtering method according to a sixth embodiment of the present invention.

17 shows the shape of a target eroded by the sputtering apparatus of the sixth embodiment.

18 is a graph showing the film formation rate of the sputtering apparatus of the sixth embodiment.

19 is a cross-sectional view showing a configuration of another electromagnet of the sputtering device of the sixth embodiment.

20 is a cross-sectional view showing a sputtering apparatus of the prior art.

21 shows a prior art sputter electrode having magnets on the front and back of the target.

<Explanation of symbols for main parts of drawing>

1: vacuum chamber 2: vacuum outlet

3: gas inflow pipe 4: gas flow controller

5: discharge gas 6: target

7: sputter electrode 8: power supply

9: magnet holder 10, 14, 15, 16: magnet

11 substrate holder 12 substrate

17, 57: electromagnet 46: circular target

Before describing the present invention in detail, it is to be noted that the same and similar reference numerals are assigned to the same and similar parts throughout the drawings.

Preferred embodiments of the present invention are described below with reference to FIGS.

[First Embodiment]

1 illustrates a sputtering apparatus for implementing a sputtering method according to a first embodiment of the present invention. The sputtering apparatus of FIG. 1 is provided with a vacuum chamber 1, a gas flow controller installed in the chamber 1, a vacuum discharge port 2 communicating with a vacuum pump, a gas inlet pipe 3, and a gas inlet pipe 3. (4) is provided. Reference numeral 5 denotes a discharge gas flowing into the chamber 1 from the gas inlet pipe 3, and argon gas is generally used.

In addition, the sputtering apparatus of FIG. 1 is provided in the chamber 1 via the target 6 installed in the chamber 1, the insulator 80, the sputter electrode 7 which supports the target 6, and this sputter electrode 7 A pair of magnet holders 9 installed inside the chamber 1 along both edges of the DC power source that applies a negative voltage, that is, a high frequency voltage, i. And a pair of bar magnets 10 supported by the magnet holder 9 and installed along both edges of the target 6. Reference numeral 11 denotes a substrate holder installed at a position opposite to the target 6 inside the chamber 1. Reference numeral 12 denotes a substrate supported by the substrate holder 11, wherein a thin film is formed on the substrate. Reference numeral 14 denotes a bar magnet 14 provided on the back side of the target so as to be provided inside the sputter electrode 7 and to be arranged in the longitudinal direction of the target 6. This magnet 14 has a moving mechanism which moves on the back side of the target 6 in a direction perpendicular to the longitudinal direction of the target 6.

FIG. 2 is a plan view of a sputter electrode part inside the sputter apparatus shown in FIG. 1, and FIG. 3 is a cross-sectional view taken along the line III-III of FIG. 2. As shown in FIG. 2, a pair of magnets 10 are installed on the outside of the target 6 along the edge thereof in the longitudinal direction of the rectangular target 6, and the magnet 10 connects the target 6. It has the same polarity of mutually opposite arrangement | positioning in between. In FIG. 2, the N poles of the magnet 10 face each other. In addition, the magnet 14 provided on the back side of the target 6 is set so that its polarity is opposite to that of the magnet 10 and is directed toward the back of the target. Since the N poles of the magnets 10 face each other in FIG. 2, the magnets 14 provided on the back side of the target face the back of the target 6. In addition, the magnet disposed on the back side of the target is configured to move and reciprocate in the direction perpendicular to the longitudinal direction of the target 6 by the above-described moving mechanism, that is, in the direction indicated by reference numeral 91. do. The magnet 14 moves over time from the state shown in FIG. 4A to the state shown in FIG. 4C through the state shown in FIG. 4B, and then the state shown in FIG. 4B in the state shown in FIG. 4C. The process moves to the state shown in FIG. 4C. That is, the magnet 14 is gradually spaced apart from the vicinity of the magnet 10 in proximity to the other magnet 10 within the range corresponding to the interval of the pair of magnets 10 on the back side of the target 6, Subsequently, when the magnet 14 is positioned near the other magnet 10, the magnet 14, on the contrary, is gradually spaced apart from the vicinity of the other magnet 10 and close to and close to the one magnet 10. Will be located at. In this operation, it is preferable that the moving speed of the magnet 14 be a uniform speed in order to make the plasma density uniform in time.

With the above configuration, the strength and direction of the magnetic field change in time at all points of the target 6. FIG. 5 is 50 mm away from the center of the target 6 and from the center of the target 6 on line III-III in FIG. 2, assuming that the moving speed of the magnet 14 provided on the back side of the target is 50 mm / s. It is a graph showing the temporal change of the magnetic flux density in the direction of III-III at the point 2mm away from the measured surface of the target at each position, shown by the solid line and the dotted line. In the graph, the rightward movement of the magnet 14 in FIG. 3 is indicated by positive movement. As can be clearly seen from Fig. 5, the strength and direction of the magnetic field change in time at each point on the target.

In Fig. 2, when the magnetic flux is directed in the right direction, electrons in the plasma are subjected to a descending force, and when the magnetic flux is directed in the left direction, the electrons in the plasma are subjected to an upward force.

Thus, the temporal change in the magnetic flux direction limits the plasma on the target surface so that the plasma density is increased, thereby increasing the erosion rate and increasing the film formation rate on the substrate. In addition, the plasma density on the target surface is uniform in time, so that the eroded portion 6a of the target 6 becomes almost uniform as shown in FIG. 6, and the efficiency of material use is improved.

Second Embodiment

7A to 7C illustrate a sputtering apparatus for implementing a sputtering method according to a second embodiment of the present invention. Most of the configuration is similar to that of the first embodiment, except that a plurality of magnets, for example, two bar magnets 14, are provided on the back side of the target 6. With this configuration, as shown in Figs. 7A to 7C, the two magnets 14 spaced apart from each other at predetermined intervals move as shown in Fig. 4 in a mechanism similar to the moving mechanism of the first embodiment. That is, as shown in Figs. 7A to 7C, on the rear side of the target 6, the left magnet 14 on the rear side of the target 6 is within a range corresponding to the distance between the pair of magnets 10; It moves integrally to the right side together with the right magnet 14 on the back side of the target 6, and gradually moves away from the left magnet 10 on the target front side. When the right magnet 14 is close to the right magnet 10 on the front side of the target 6, it is positioned near the magnet 10, on the contrary, the right magnet 14 is left together with the left magnet 14. When integrally moved away from the right magnet 10, the left magnet 14 is close to the left magnet 10, it is located near the magnet 10. In this operation, it is preferable that the moving speed of the two magnets 14 be a uniform speed so that the plasma density is made uniform in time.

Similar effects to the embodiment of FIG. 1 can be obtained in this second embodiment. In addition, when the target is large, that is, when the distance between the magnets 10 is wide, the possibility of the reduction of the magnetic flux on the surface of the target and the possibility of the film formation speed being lowered can be suppressed by providing the plurality of magnets 14.

Third Embodiment

8 shows a sputter electrode portion of a sputtering apparatus for implementing a sputtering method according to a third embodiment of the present invention. FIG. 8 is similar to FIG. 2 which is a plan view of the sputter electrode part of the sputtering apparatus of the first embodiment shown in FIG. FIG. 9 is a cross-sectional view taken along the line IX-IX of FIG. 8.

The third embodiment differs from the second embodiment in that it is not for the rectangular target 6 but for the circular target 46.

The annular magnet 15 installed along the circumferential edge of the circular target 46 is installed such that the same pole is directed toward the center of the circular target 46 along the circumference of the target 46. In FIG. 8, for example, the configuration in which the N pole is toward the center of the target 46 is shown. Three cylindrical magnets 16 are provided at the rear side of the target 46 at intervals of 120 °, and these three magnets 16 are centered on the target 46 while maintaining a circular motion, in particular 120 °. It is installed to be able to move in the same direction at a uniform angular velocity on each concentric circle having a different radius with respect to, and the pole opposite to the pole toward the center of the magnet 15 is installed to face the front of the target. Therefore, in FIG. 8, the S pole is toward the rear surface of the target 46.

In FIG. 8, the magnetic flux moves toward the center of the target, and the electrons move in the circumferential direction of the target 46 according to the movement of the three magnets 16 installed on the back side of the target by the force of the electrons in the plasma. . At this time, the three magnets 16 each move on a circumference having a different radius with respect to the center of the target 46, so that the plasma density becomes uniform in time-average at each point on the target surface, The erosion portion 46a becomes almost uniform as shown in FIG. Reference numeral 47 denotes a circular sputter electrode corresponding to the sputter electrode 7 shown in FIG.

Even if three magnets 16 are provided on the rear side of the target according to the above technique at intervals of 120 °, a similar effect can be obtained with a plurality of magnets. It is desirable to install magnets at regular angular intervals. The magnet 16 provided on the back side of the target may have a linear shape having a circular arc peripheral surface corresponding to the annular magnet 15 instead of the circular shape. In addition, since the three magnets 16 do not always need to move integrally with each other in the same direction, the directions in which they move integrally with each other can be changed at regular time intervals.

Fourth Embodiment

11 shows a sputter electrode portion of a sputtering apparatus for implementing the sputtering method according to the fourth embodiment of the present invention. FIG. 11 is similar to FIG. 2 which is a plan view of the sputter electrode part of the sputtering apparatus of the first embodiment shown in FIG.

In this fourth embodiment, instead of the configuration in which three magnets 16 moving on the back side of the target 46 are moved concentrically in almost circular motion, one cylindrical magnet 16 moves and reciprocates in a concentric circle. It differs from the third embodiment in that almost circular motion is performed in a spiral manner without movement.

The magnet 15 is installed along the circumference of the target 46 such that the same poles face the center of the target 46 similar to FIG. 8. The magnet 16 provided on the back side of the target 46 moves in a helical motion from the center side of the target 46 to the outer circumference side. When the magnet 16 reaches the predetermined position on the outermost circumferential side, the magnet, on the contrary, moves in a spiral motion from the outermost circumferential side of the target 46 to the center side. This movement is preferably made at a uniform angular velocity so as to make the plasma density nearly uniform in time. The magnet 16 is installed such that the pole opposite to the center of the magnet 15 faces the front of the target 46 similarly to the third embodiment.

With this configuration, the plasma density becomes almost uniform in time-average at each point on the target surface in accordance with the spiral motion of the magnet 16 provided on the back side of the target, thereby improving the efficiency of material use of the target 46.

Even in the case where one magnet 16 is provided on the back side of the target according to the above description, it is possible to install a plurality of magnets and move them integrally in a spiral in the same direction.

[Example 5]

12 shows a sputter electrode portion of a sputtering apparatus for implementing the sputtering method according to the fifth embodiment of the present invention. FIG. 12 is similar to FIG. 2 which is a plan view of the sputter electrode part of the sputtering apparatus of the first embodiment shown in FIG. FIG. 13 is a cross-sectional view taken along the line XIII-XIII of FIG. 12.

In this fifth embodiment, the polarity of the eight arc-shaped electromagnets 17 provided in a circular configuration on the front side of the target 46 is different from that of the fourth embodiment. Instead of installing it changes in time.

The eight electromagnets 17 are provided at regular intervals along the circumference of the target 46 and have the same shape. Each of the electromagnets 17 includes a magnetic body 17a to be magnetized, a coil 17c wound around the magnetic body 17a, and a power source 17c for flowing a current through the coil 17b, and eight power sources 17c. The control unit 17d for controlling () is installed. By controlling the direction in which current flows through the coils 17b of the eight electromagnets 17 with the control unit 17d, the poles of the electromagnets 17 generated in front of the target 46 can be independently controlled.

14A-14C show the change over time of the magnetic pole of the electromagnet 17 generated in front of the target 46. By changing the magnetic pole, the direction of the magnetic flux indicated by reference numeral 92 is changed from the state shown in Fig. 14A to Fig. 14B, to the state shown in Fig. 14C, and then from Fig. 14C to Fig. 14B through Fig. 14A. Is changed. Subsequently, the change from the state shown in FIG. 14A to the state shown in FIG. 14C and the state shown in FIG. 14C to the state shown in FIG. 14A is repeated a number of times. Therefore, in accordance with the change of the stimulus, the direction indicated by the reference numeral 93, which receives electrons in the plasma, is changed. Due to the temporal change in the direction 93 of the force of the electrons in the plasma, the plasma density on the target surface becomes nearly uniform in time-average, so that the erosion of the substantially uniform target 46b as a whole as shown in FIG. Is done.

In the above description, eight electromagnets 17 are installed along the circumference of the target, but four or more even electromagnets can be implemented. According to the purpose of the fifth embodiment, three or more magnets are required to change the direction in which electrons are forced in time. And, considering the symmetry of the electrons on the target surface, even magnets are preferable. Therefore, it is desirable to provide four or more even electromagnets.

Sixth Embodiment

16A to 16H illustrate a sputtering apparatus for implementing a sputtering method according to a sixth embodiment of the present invention. This figure shows a change over time of the stimulus generated in front of the target 46 similar to FIG. 14.

In this sixth embodiment, eight electromagnets 17 are provided at regular intervals along the circumference of the target 46 similarly to the fifth embodiment. The sixth embodiment is provided such that four consecutive electromagnets 17 are arranged to generate the same poles under the control of the control unit 17d, and four electromagnets 17 opposite to these magnets are connected to the poles of the continuous electromagnets. Is different from the fifth embodiment in that the four consecutive electromagnets 17 are sequentially displaced over time.

Instantly, electrons in the plasma are forced in a predetermined direction parallel to the target surface. In this sixth embodiment, the direction is rotated 360 [deg.] So that the plasma density on the surface of the target 46 becomes almost uniform in time-average. Therefore, as shown in Fig. 17, the erosion of the erosion portion 46c of the target 46 proceeds almost uniformly as a whole, thereby improving the use efficiency of the material. Also at this stage, the film formation rate is very fast, and the distribution of the film formed on the substrate becomes almost uniform as shown in FIG.

In addition, according to this sixth embodiment, the electromagnets 17 which face each other with the target 46 in between have distinct poles. Thus, by adopting a configuration in which two magnetic poles are provided by one electromagnet 57 as shown in FIG. 19, the number of electromagnets 57 can be reduced to four, thereby simplifying the apparatus. An electromagnet 57 in which the coil 57b is wound around the magnetic body 57a is installed to flow current from the power source 57c through the coil 57b, and to a control unit 57d similar to the control unit 17d described above. It is desirable to control the four power sources 57c. Most preferably, the coil portions of the electromagnets 17 and 57 are located at the atmospheric side of the chamber 1.

In the above description, eight electromagnets 17 are installed along the circumference of the target 46, but can be installed if four or more electromagnets are installed. It is most preferable to provide an even number of electromagnets 17.

In each of the above embodiments, it is desirable to measure the moving frequency of each magnet, the change frequency of the magnetic poles, and their operating time.

In addition, in the first and second embodiments, the direction in which the magnet 10 provided on the front side of the target and the magnet 14 provided on the back side of the target are provided is not limited only to the longitudinal direction of the rectangular target 6. It can be installed along a short side perpendicular to the longitudinal direction. Also, in the first and second embodiments, any number of magnets 14 may be provided on the back side of the target.

In the fourth embodiment, the number of magnets 16 provided on the back side of the target is not limited to one, but may be any number.

Further, in the fifth and sixth embodiments, it is preferable to adopt a method of changing the magnetic poles of the electromagnets 17 and 57 at the same time interval in order to make the plasma density nearly uniform in time.

The entire description of Japanese Patent Application No. 8-261643, filed October 2, 1996, including the detailed description, the claims, the drawings, and the abstract, is incorporated herein by reference.

As described above, according to the present invention, it is advantageous to make the plasma density almost uniform on the target surface, the erosion of the target almost uniform, increase the use efficiency of the target material, and improve the formation rate of the thin film on the substrate. By producing the effect, it is possible to obtain an excellent effect of ensuring the uniformity of the film thickness.

Although the present invention has been described in detail with the preferred embodiments with reference to the accompanying drawings, it will be apparent to those skilled in the art that various modifications and changes can be made. Such changes and modifications are to be understood as included within the scope of the present invention without departing from the scope of the claims.

Claims (12)

A first magnet 15 disposed opposite the edge of the circular target 46; And a second magnet 16 disposed on the rear side of the circular target and capable of circular motion, wherein the second magnet 16 has a plurality of sputterings. Sputter device. 2. The polarity of claim 1, wherein the polarities of the first magnets 15 are defined so that the same poles face the center of the target, and the second magnets 16 are different from the poles facing the target center of the first magnets. The sputtering apparatus characterized by setting so that it may face back the said target. And a plurality of electromagnets (17, 57) disposed opposite the edges of the circular target (46), wherein the electromagnets have sputtering using a circular target, characterized in that they have a magnetic pole that changes in time. 4. The sputter apparatus of claim 3, wherein the electromagnet has an independently controllable magnetic pole oriented inward of the target. The sputtering apparatus according to claim 9 or 10, wherein the electromagnets are arranged in four or more even numbers. 5. The sputter apparatus according to claim 3 or 4, wherein the electromagnet has respective coils installed on an atmospheric side of the vacuum chamber. Sputtering is performed using the circular target in a state in which the first magnet 15 facing the edge of the circular target 46 is disposed and the second magnet 16 is movably disposed on the back side of the target. A sputtering method performed; Sputtering while circularly moving the second magnet on the rear side of the target, and changing the direction of the magnetic flux in time so that the plasma density is uniformly temporally on the target surface, wherein the second magnet 16 The sputtering method, characterized in that the spiral movement. 8. The polarity of the first magnet 15 is defined such that the poles are directed toward the center of the target, and the second magnet 16 has a pole different from the pole toward the target center of the first magnet. And the sputtering method is set to face the back surface of the target. A sputtering method for performing sputtering using the circular target in a state where a plurality of electromagnets (17, 57) facing the edges of the circular target (46) are disposed; Varying the magnetic poles of the electromagnet in time to change the direction of the magnetic flux and to change the direction in which the electrons in the plasma are forced 93 to uniformly time-averaged the plasma density on the target surface. Sputtering method for performing sputtering using a circular target characterized in that. 10. The plasma density on the target surface of claim 9, wherein the direction of the magnetic flux is changed by changing the magnetic pole of the electromagnet in time, and the direction 93 where the electrons in the plasma are applied is rotated by 360 degrees. Sputtering method characterized in that the uniformity. A first magnet 15 disposed opposite the edge of the circular target 46; And a second magnet 16 disposed on the rear side of the circular target and capable of circular motion, wherein the second magnet 16 performs sputtering using a circular target, characterized in that it performs a spiral motion. Running sputter device. 12. The pole according to claim 11, wherein the polarities of the first magnets (15) are defined such that the poles are directed toward the center of the target and the second magnets (16) are different from the poles facing the target center of the first magnets. The sputtering apparatus characterized by setting so that it may face back the said target.

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