JPH10102247A - Sputtering device and method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a sputtering having a target in which the erosion of the target can almost uniformly be progressed and to provide a method therefor. SOLUTION: A magnet 10 is arranged along one edge of a target 6, and the polarities of magnets 10 opposite with the target 6 interposed are made same. Furthermore, as for a magnet 14 arranged on the back side of the target 6, the porosity and the reverse porosity opposite with the target 6 interposed in the magnet 10 orient the surface direction of the target 6, and it is composed so as to move to the direction orthogonally crossed with one edge of the target 6 and also to reciprocate, by which the progression of the erosion of the target 6 is made almost uniform in the target face.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetron sputtering apparatus and a method as one of thin film forming techniques.

[0002]

2. Description of the Related Art Sputtering generally involves generating a plasma by generating a gas discharge in a low-vacuum atmosphere, causing the cations of the plasma to collide with a target provided on a negative electrode called a cathode, and causing particles sputtered by the collision. Is a method of forming a thin film by adhering to a substrate.
This sputtering method is widely used in the film forming process because the control of the composition and the operation of the apparatus are relatively simple. However, the conventional sputtering method has a disadvantage that the thin film formation rate is lower than that of a vacuum evaporation method or the like.
For this reason, a magnetron sputtering method in which a permanent magnet or an electromagnet is used as a magnetic circuit to form a magnetic field near a target has been devised, thereby increasing the speed of forming a thin film, and forming a thin film by a sputtering method in a manufacturing process of a semiconductor component or an electronic component. For mass production.

[0003] In the above magnetron sputtering method,
There is a problem that there is unevenness in film thickness and film quality due to local erosion of the target. To solve this problem, an apparatus for forming a uniform magnetic field orthogonal to an electric field has been devised. FIG. 20 shows an apparatus configuration of a conventional sputtering apparatus. In FIG. 20, 1 is a chamber, 2 is a vacuum exhaust port of the chamber 1 evacuated by a vacuum pump,
Reference numeral 3 denotes a gas introduction pipe to the chamber 1 and reference numeral 4 denotes a gas flow controller attached to the gas introduction pipe 3. 5 is a gas introduction pipe 3
, Which is a discharge gas introduced into the chamber 1 and usually uses an argon gas. Reference numeral 6 denotes a target, 7 denotes a sputtering electrode, 8 denotes a power supply for discharge, 9 denotes a magnet holder, 10 denotes a magnet, and 11 denotes a substrate holder. Reference numeral 12 denotes a substrate on which a thin film is formed.

The operation of the above-structured sputtering apparatus will be described below. First, the inside of the chamber 1 is pumped through a vacuum exhaust port 2 by a vacuum pump.
Exhaust to about ^-7 Torr. Next, the above chamber 1
The discharge gas 5 is introduced into the chamber 1 through the gas introduction pipe 3 connected to one end of the chamber 1, and the pressure in the chamber 1 is reduced to 10 ^−3.
It is maintained at about 10 ⁻² Torr. When a negative or high frequency voltage is applied to the sputtering electrode 7 to which the target 6 is attached by a DC or high frequency sputtering power source 8, the electric field generated by the power source 8 and the magnetic field generated by the magnet 10 housed in the magnet holder 9 act. Plasma is generated in the vicinity of the surface of the target 6 by discharge, and a sputtering phenomenon occurs, and the sputter particles released from the target 6 cause the substrate 1
2, a thin film is formed. However, in the above sputtering apparatus, when the target 6 is a ferromagnetic material, most of the magnetic flux generated from the magnet 10 passes through the target 6, and the magnetic flux contributing to plasma formation is extremely small. As a result, there is a problem that the film forming speed is reduced. Therefore, as described in Japanese Patent Application Laid-Open No. 61-124567, in addition to the magnet arranged on the front surface of the target, a magnet is also arranged on the back surface of the target so that the film forming speed is not reduced even in the target made of a ferromagnetic material. It has been done. FIG. 21 shows a configuration of a sputtering electrode when magnets 10 and 13 are arranged on the front and back surfaces of the target 6.
Is a magnet arranged on the back surface of the. With this configuration, the magnetic flux generated from the magnet 13 disposed on the back surface of the target 6 fills the target 6 made of a ferromagnetic material, and the magnetic flux generated from the magnet 10 disposed on the target surface passes through the target 6. I try to prevent it. By this effect, a reduction in the film forming rate on the target 6 made of a ferromagnetic material is prevented.

[0005]

However, in the above-mentioned conventional configuration, although an improvement in the deposition rate of the ferromagnetic material target can be achieved, since the magnetic flux is directed in the same direction over the entire surface of the target, it is difficult to obtain a plasma. Electrons receive a force in the same direction over the entire surface of the target.
Therefore, the density of electrons in the plasma becomes non-uniform in the target surface. As a result, there is a problem that the erosion of the target in the direction of the force applied to the electrons progresses rapidly, and the erosion progresses in the reverse direction, and the erosion does not progress uniformly as the erosion progresses. As a result, not only is the material utilization efficiency of the target material extremely poor, but also a problem arises in that the film thickness uniformity of the thin film formed on the substrate surface cannot be ensured. An object of the present invention is to solve the above-mentioned problems and to provide a sputtering apparatus and a method capable of causing erosion of a target to proceed substantially uniformly regardless of a magnetic material.

[0006]

In order to achieve the above object, the present invention is configured as follows. First of the present invention
According to the sputtering apparatus according to the aspect, in the sputtering apparatus that performs sputtering using a rectangular target, the rod-shaped first magnets are respectively arranged along the pair of edges of the target, and the rod-shaped first magnet is formed on the back side of the target. The second magnet is configured to be movable. According to a second aspect of the present invention, in the first aspect, the polarity of the first magnet is determined such that the same polarity faces each other, and the second magnet has a different polarity from the mutually facing magnetic poles of the first magnet. It may be configured to be set to face the back surface of the target. According to the third aspect of the present invention, in the first or second aspect, the second magnet may be configured to reciprocate in a range corresponding to the space between the first magnets on the back side of the target. According to a fourth aspect of the present invention, in any one of the first to third aspects, the second magnet may be constituted by a plurality of rod-shaped magnets.

According to the sputtering apparatus of the fifth aspect of the present invention, in a sputtering apparatus for performing sputtering using a round target, a third magnet opposed to an edge of the target is arranged, and a back side of the target is provided. The fourth magnet is arranged so as to be able to move substantially in a circle. According to a sixth aspect of the present invention, in the fifth aspect, the polarity of the third magnet is determined such that the same polarity faces the center of the target, and the fourth magnet is
The third magnet may be configured so that a pole different from a pole facing the center of the target is set to face a back surface of the target. According to the seventh aspect of the present invention, in the fifth or sixth aspect, the number of the fourth magnets may be plural. According to an eighth aspect of the present invention, in any one of the fifth to seventh aspects, the fourth magnet may be configured to perform a spiral movement.

[0008] According to the sputtering apparatus of the ninth aspect of the present invention, in a sputtering apparatus for performing sputtering using a round target, a plurality of electromagnets facing the edge of the target are arranged, and the magnetic poles of the electromagnet are controlled by time. It changes so that it may change. Tenth aspect of the present invention
According to an aspect, in the ninth aspect, the electromagnet can be configured to be able to independently control the poles facing the inside of the target. According to an eleventh aspect of the present invention, in the ninth or tenth aspect, the number of the electromagnets is four.
It may be configured such that the number is an even number or more. According to a twelfth aspect of the present invention, in any one of the ninth to eleventh aspects, the coil of the electromagnet may be arranged on the atmosphere side of the vacuum chamber.

[0009] According to the sputtering method of the thirteenth aspect of the present invention, using a rectangular target, the rod-shaped first magnets are respectively arranged along a pair of edges of the target, and the rod-shaped first magnet is disposed on the back side of the target. Second
In a sputtering method for performing sputtering in a state where a magnet is movably disposed, sputtering is performed while moving the second magnet on the back side of the target, the direction of magnetic flux is changed with time, and plasma on the target surface is changed. The density is configured to be substantially averaged over time. According to a fourteenth aspect of the present invention, in the thirteenth aspect, the polarity of the first magnet is determined so that the same polarity faces each other, and the second magnet has a different polarity from the mutually facing magnetic pole of the first magnet. It may be configured to be set to face the back surface of the target. According to a fifteenth aspect of the present invention, in the thirteenth or fourteenth aspect, the second magnet can be configured to reciprocate in a range corresponding to the space between the first magnets on the back side of the target.

[0010] According to the sputtering method of the sixteenth aspect of the present invention, the third magnet facing the edge of the target is arranged using the round target, and the fourth magnet is moved to the back side of the target. In the sputtering method in which the sputtering is performed in a state where the magnets are arranged as possible, the sputtering is performed while the fourth magnet is moved in a substantially circular motion on the back surface side of the target, the direction of the magnetic flux is changed with time, and the plasma density on the target surface is changed. Are configured to be approximately averaged over time. According to a seventeenth aspect of the present invention, in the sixteenth aspect, in the sixteenth aspect, the polarity of the third magnet is determined so that the same polarity is directed to the center of the target, and the fourth magnet is formed of the target of the third magnet. It may be configured such that a pole different from the pole facing the center is set to face the back surface of the target. According to an eighteenth aspect of the present invention, in the sixteenth or seventeenth aspect, the fourth magnet may be configured to perform a spiral motion.

According to a sputtering method of a nineteenth aspect of the present invention, in the sputtering method in which a plurality of electromagnets facing the edge of the target are arranged using a round target, the magnetic poles of the electromagnets Is changed over time to change the direction of the magnetic flux, the direction in which the electrons in the plasma receive the force changes, and the plasma density on the target surface is made substantially uniform over time. I have. According to a twentieth aspect of the present invention, in the nineteenth aspect, by changing the magnetic pole of the electromagnet with time, the direction of magnetic flux is changed, and the direction in which electrons in the plasma receive force is rotated by 360 °. Alternatively, the plasma density on the target surface may be made substantially uniform on a time average basis.

[0012]

DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to FIGS. (First Embodiment) FIG. 1 shows a structure of a sputtering apparatus for carrying out a sputtering method according to a first embodiment of the present invention. In FIG. 1, 1 is a vacuum chamber, 2 is a vacuum exhaust port provided in the chamber 1 and connected to a vacuum pump, 3 is a gas introduction pipe provided in the chamber 1, and 4 is a gas flow rate attached to the gas introduction pipe 3. It is a controller. Reference numeral 5 denotes a discharge gas introduced into the chamber 1 from the gas introduction pipe 3, which is usually argon gas.
Reference numeral 6 denotes a rectangular target placed in the chamber 1, reference numeral 7 denotes a sputtering electrode attached to the chamber 1 via an insulator 80 and supports the target 6, and reference numeral 8 applies a negative voltage or a high-frequency voltage to the sputtering electrode 7. A DC or high-frequency discharge power source 9 for discharge is arranged in the chamber 1 and a pair of magnet holders arranged along a pair of edges along the longitudinal direction of the target 6, and 10 is held in the pair of magnet holders 9. And a pair of bar-shaped magnets arranged along a pair of edges of the target 6. 1
Reference numeral 1 denotes a substrate holder arranged at a position facing the target 6 in the chamber 1. Reference numeral 12 denotes a substrate held by the substrate holder 11, on which a thin film is formed. Reference numeral 14 denotes a rod-shaped magnet arranged inside the sputtering electrode 7 and on the back side of the target and along the longitudinal direction of the target 6. The magnet 14 is orthogonal to the longitudinal direction of the target 6 on the back side of the target 6. It has a moving mechanism that moves in the direction.

FIG. 2 is a plan view of a portion of the sputtering apparatus shown in FIG. FIG. 3 shows a cross section taken along line AA ′ of FIG. As shown in FIG. 2, each magnet 10 is arranged outside the target 6 along each edge along the longitudinal direction of the rectangular target 6, and a pair of magnets 10 facing each other with the target 6 interposed therebetween. The polarity is determined to be the same. In FIG. 2, the north poles of the pair of magnets 10 are opposed to each other. Further, the magnet 14 disposed on the back surface side of the target 6 is determined such that the polarity opposite to the polarity of the magnet 10 opposed to the target 10 across the target faces the back surface of the target. In FIG. 2, since the magnets 10 face the N poles, the magnet 14 on the back side of the target has the S pole facing the back side of the target 6. Further, the magnet 14 on the rear surface side of the target is configured to be able to move and reciprocate in a direction orthogonal to the longitudinal direction of the target 6, that is, in a direction of 91, by the moving mechanism.
4 (A) through (B) and (C) from (C) through (B) with time. That is, in a range corresponding to between the pair of magnets 10 on the back side of the target 6, it is assumed that the distance from the vicinity of one of the magnets 10 gradually increases to approach the other magnet 10, and then to the position near the other magnet 10. ,vice versa,
One magnet 1 gradually moves away from the vicinity of the other magnet 10.
0, and then to a position near one magnet 10. It is preferable that the moving speed of the magnet 14 during this time is constant, in order to roughly average the plasma density over time.

With the above configuration, the intensity and direction of the magnetic field at all points on the target 6 change with time. FIG. 5 shows, as an example, 50 mm at the center position of the target 6 and on the line AA ′ in FIG. 2 from the center of the target 6.
The magnet 14 arranged on the back side of the target at a remote position
The change over time of the magnetic flux density in the AA ′ direction at a distance of 2 mm from the target surface when the moving speed of the target is 50 mm / s is shown by a solid line and a dotted line, respectively. The rightward movement of the magnet 14 in FIG. 3 is shown as positive. As can be seen from FIG. 5, the intensity and direction of the magnetic field change with time at each point on the target.

In FIG. 2, when the magnetic flux is directed to the right, the electrons in the plasma receive a force directed downward in FIG.
When the magnetic flux is directed to the left, the electrons in the plasma receive an upward force. Therefore, by changing the direction of the magnetic flux over time, it becomes possible to confine the plasma on the target surface and increase the density of the plasma, thereby increasing the erosion rate and increasing the film formation rate on the substrate. Further, the plasma density on the target surface is averaged with time, and as shown in FIG.
Is substantially uniform, and the utilization efficiency of the material is increased.

(Second Embodiment) FIG. 7 shows a sputtering apparatus for performing a sputtering method according to a second embodiment of the present invention. Although the configuration is substantially the same as that of the first embodiment, the difference is that a plurality of, for example, two bar-shaped magnets 14 on the back side of the target 6 are arranged. Therefore, as shown in FIG. 7, two magnets 14 separated by a predetermined distance move as shown in FIG. 6 by a mechanism similar to the moving mechanism of the first embodiment. That is, in the range corresponding to between the pair of magnets 10 on the back side of the target 6, the target 6 is moved so that the left magnet 14 on the back side of the target in FIG. 7 gradually moves away from the vicinity of the left magnet 10 on the front side of the target. When the right magnet 14 moves rightward integrally with the right magnet 14 on the back side of the target 6 and approaches the right magnet 10 on the front side of the target 6 and then reaches a position near the magnet 10,
Conversely, the right magnet 14 moves leftward integrally with the left magnet 14 so as to gradually move away from the vicinity of the right magnet 10, and the left magnet 14 approaches the left magnet 10, and the magnet 10 In the vicinity. During this time, the moving speeds of the two magnets 14 may be equal speeds.
It is preferable to roughly average the plasma density over time. In the second embodiment, the same effects as those of the first embodiment can be obtained. In particular, when the target is large, that is, when the interval between the magnets 10 is wide, a plurality of magnets 14 are provided, so that the target surface The above magnetic flux can be prevented from lowering, and the film forming speed can be prevented from lowering.

(Third Embodiment) FIG. 8 shows a sputtering electrode part of a sputtering apparatus for performing a sputtering method according to a third embodiment of the present invention. FIG. 8 is the same as FIG. 2 which is a plan view of the sputtering electrode portion of the sputtering apparatus shown in FIG. 1 in the first embodiment. Also, FIG. 9 shows B in FIG.
It shows a section taken along the line -B '. The difference between the third embodiment and the second embodiment is that the third embodiment targets a circular target 46 instead of the rectangular target 6. The annular magnets 15 arranged along the circumferential edge of the circular target 46 are arranged along the circumference of the target 46 such that the same poles face the center of the target 46. In FIG. 8, for example, the N pole is arranged so as to face the center of the target 46. Three cylindrical magnets 16 arranged on the back side of the target 46 are arranged at intervals of 120 °, and these three magnets 16 are capable of moving substantially in a circular manner while maintaining an interval of 120 °. Specifically, they are arranged so that they can move on the concentric circles having different radii from the center of the target 6 in the same direction, preferably at the same angular velocity, and the polarity opposite to the polarity toward the center of the magnet 15 is the target. It is determined so as to face the surface direction. Therefore, in FIG.
The pole faces the rear surface of the target 46.

In FIG. 8, since the magnetic flux is directed to the center of the target, the electrons in the plasma move in the circumferential direction of the target 46 with the movement of the three magnets 16 arranged on the back side of the target. Receive. At this time, since the three magnets 16 move on the circumferences having different radii from the center of the target 46, the plasma density at each point on the target surface becomes substantially uniform on a time average basis, and as shown in FIG. The eroded portion 46a is substantially uniform. Reference numeral 47 denotes a circular sputtering electrode corresponding to the sputtering electrode 7 in FIG. In the above description, three magnets 1 arranged on the back side of the target are used.
6 has been described as an example in which three are arranged at intervals of 120 °. However, it is desirable that the intervals be at equal angles. Further, the shape of the magnet 16 disposed on the back surface side of the target may be not only a circular surface but also a sector shape having an arc peripheral surface corresponding to the annular magnet 15. Further, the three magnets 16 are not limited to always moving integrally in the same direction, and the direction in which the three magnets 16 move integrally may change at predetermined time intervals.

(Fourth Embodiment) FIG. 11 shows a fourth embodiment of the present invention.
1 shows a sputtering electrode portion of a sputtering apparatus for performing a sputtering method according to an embodiment. FIG. 11 is the same as FIG. 2 which is a plan view of the sputtering electrode portion of the sputtering apparatus shown in FIG. 1 in the first embodiment. The fourth embodiment is different from the third embodiment in that three magnets 16 moving on the back surface side of the target 46 are arranged, and instead of making a substantially concentric circular motion, one cylindrical magnet 16 is concentric. Rather, it is a spiral substantially circular motion and reciprocating motion. 8, the magnets 15 are arranged along the circumference of the target 46 such that the same poles face the center of the target 46. The magnet 16 disposed on the back side of the target 46 moves while drawing a spiral motion from the center side of the target 46 to the outermost peripheral side. On the other hand, when reaching the predetermined position on the outermost peripheral side, the target 46 moves while drawing a spiral motion from the outermost peripheral side to the center side. This movement is preferably performed at a constant angular velocity in order to substantially average the plasma density over time. The magnet 16 is similar to the magnet 15 in the third embodiment.
The polarity opposite to the polarity toward the center of the target 46 is determined so as to face the surface of the target 46. According to such a configuration, with the movement of the spiral movement of the magnet 16 disposed on the rear surface side of the target, the plasma density at each point on the target surface becomes substantially uniform on a time average basis, and the utilization efficiency of the material of the target 46 is improved. Is improved. In the above description, an example is described in which one magnet 16 is arranged on the back surface side of the target. However, a plurality of magnets 16 may be arranged so as to perform spiral motion integrally in the same direction.

(Fifth Embodiment) FIG. 12 shows a fifth embodiment of the present invention.
1 shows a sputtering electrode portion of a sputtering apparatus for performing a sputtering method according to an embodiment. FIG. 12 is the same as FIG. 2 which is a plan view of the sputtering electrode portion of the sputtering apparatus shown in FIG. 1 in the first embodiment. FIG. 13 shows a cross section taken along the line CC ′ of FIG. In the fifth embodiment, unlike the fourth embodiment, instead of arranging magnets on the back side of the target 46, the polarity of the eight arc-shaped electromagnets 17 arranged in an annular shape on the front side of the target 46 is changed. This is changed every time. Eight electromagnets 17 are arranged at equal intervals along the circumference of the target 46, and have the same shape. The electromagnet 17 is composed of a magnetic body 17a for magnetizing, a coil 17b wound around the magnetic body 17a, and a power supply 17c for flowing a current through the coil 17b, and controls the eight power supplies 17c. By controlling the direction in which current flows through the coils 17b of the eight electromagnets 17 by the control device 17d,
The pole of each electromagnet 17 generated on the surface of the target 46 can be controlled independently.

FIGS. 14A to 14C show a target 46.
3 shows a temporal change of the magnetic pole of each electromagnet 17 generated on the surface of FIG. By changing the magnetic pole, 9
The direction of the magnetic flux indicated by 2 changes from (A) to (C) via (B) in FIG. 14, and changes from (C) to (A) via (B) in FIG. The changes (A) to (C) and the changes from (C) to (A) are repeated an arbitrary number of times. As a result, with the change in the magnetic pole, the direction in which the electrons in the plasma receive the force indicated by 93 changes. As the direction 93 in which the electrons in the plasma receive force changes with time, the plasma density on the target surface is made substantially uniform over time, and the entire and substantially uniform erosion of the target 46 as shown in FIG. A portion 46b is obtained. In the above description, the electromagnet 17 arranged along the circumference of the target is 8
In the example described above, if the number is four or more,
There is no problem. In order to realize the time-dependent change in the direction in which electrons are intended by the fifth embodiment, three or more magnets are required. In addition, an even number of magnets is preferable because of the symmetry of electrons in the target plane. Therefore, it is desirable that the number is four or more even numbers.

(Sixth Embodiment) FIG. 16 shows a sixth embodiment of the present invention.
17 shows a sputtering apparatus for performing a sputtering method according to the embodiment, and shows a temporal change of a magnetic pole generated on the surface of a target 46, as in FIG. In the sixth embodiment, as in the fifth embodiment, eight electromagnets 17 are arranged at equal intervals along the circumference of the target 46. The sixth embodiment is different from the fifth embodiment in that four electromagnets 17 successively generate the same pole and four electromagnets 17 facing them generate different poles under the control of the control device 17d. The four electromagnets 17 that are continuous with time are shifted one by one. At a certain moment, the electrons in the plasma receive a force in a certain direction parallel to the target surface. In this sixth embodiment, the direction is 360 degrees.
, The plasma density on the surface of the target 46 becomes substantially uniform over time. Therefore, as shown in FIG.
c progresses substantially uniformly over the entire surface, and the utilization efficiency of the material is improved. At this time, the formation speed and the distribution of the film formed on the substrate are extremely high and substantially uniform as shown in FIG.

Further, in the sixth embodiment, since the electromagnets 17 facing each other with the target 46 interposed therebetween are always different poles, as shown in FIG.
By adopting the configuration of 7, the number of electromagnets 57 can be reduced to four, and the device can be simplified. The electromagnet 57 winds a coil 57b around a magnetic body 57a so that a current flows from the power supply 57c to the coil 57a. The four power supplies 57c are connected to a control device 57d.
Thus, the control may be performed in the same manner as the control device 17d. It is more preferable if the coil portions of the electromagnets 17 and 57 are located on the atmosphere side of the chamber 1. In the above description, an example in which eight electromagnets 17 are arranged along the circumference of the target 46 has been described, but there is no problem if four or more electromagnets 17 are arranged. However, even if the number of electromagnets 17 is even, it is more preferable from the viewpoint of symmetry.

In each of the above embodiments, the number of movements of the magnet, the number of changes in the magnetic pole, and the operation time thereof may be determined as desired. In the first and second embodiments, the direction in which the magnets 10 on the front side of the target and the magnets 14 on the back side of the target are arranged not only along the longitudinal direction of the rectangular target 6 but also along the transverse direction orthogonal to the longitudinal direction. May be. In the first and second embodiments, the number of magnets 14 on the back surface of the target may be any number. In the fourth embodiment, the magnet 1 on the back surface side of the target is used.
The number of 6 is not limited to one and may be any number. Also, the fifth
In the sixth embodiment, as a method of changing the magnetic poles of the electromagnets 17 and 57, it is preferable to change the magnetic poles at the same time interval in order to substantially average the plasma density over time.

[0025]

As described above, according to the present invention, the plasma density on the target surface is substantially uniform, the erosion of the target is substantially uniform, the utilization efficiency of the target material is improved, and the target material is formed on the substrate. This has the advantageous effect that the production rate of the thin film can be improved and uniformity of the film thickness can be ensured.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view illustrating a sputtering apparatus for performing a sputtering method according to a first embodiment of the present invention.

FIG. 2 is a plan view showing a structure near a sputtering electrode of the sputtering apparatus according to the first embodiment.

FIG. 3 is a sectional view taken along line A-A 'of FIG.

FIGS. 4A to 4C are diagrams illustrating the movement of a magnet arranged on the back side of the target of the sputtering apparatus according to the first embodiment.

FIG. 5 is a diagram illustrating a temporal change of a magnetic flux density on a target surface of the sputtering apparatus according to the first embodiment.

FIG. 6 is a cross-sectional view illustrating an eroded shape of a target of the sputtering apparatus according to the first embodiment.

FIGS. 7A to 7C are diagrams showing the movement of a magnet arranged on the back side of a target of a sputtering apparatus for performing a sputtering method according to a second embodiment of the present invention.

FIG. 8 is a diagram showing a structure near a sputtering electrode of a sputtering apparatus for performing a sputtering method according to a third embodiment of the present invention.

FIG. 9 is a sectional view taken along line B-B 'of FIG.

FIG. 10 is a cross-sectional view illustrating an eroded shape of a target of a sputtering apparatus according to a third embodiment.

FIG. 11 is a plan view showing a structure near a sputtering electrode of a sputtering apparatus for performing a sputtering method according to a fourth embodiment of the present invention.

FIG. 12 is a plan view showing a structure near a sputtering electrode of a sputtering apparatus for performing a sputtering method according to a fifth embodiment of the present invention.

FIG. 13 is a sectional view taken along the line C-C 'of FIG.

FIGS. 14A to 14C are diagrams showing a time change in a direction in which a magnetic pole, a magnetic flux, and electrons in a plasma receive a force in a sputtering apparatus according to a fifth embodiment.

FIG. 15 is a cross-sectional view illustrating an eroded shape of a target of a sputtering apparatus according to a fifth embodiment.

FIGS. 16A to 16H are diagrams showing a time change of a magnetic pole of a sputtering apparatus for performing a sputtering method according to a sixth embodiment of the present invention.

FIG. 17 is a cross-sectional view illustrating an eroded shape of a target of a sputtering apparatus according to a sixth embodiment.

FIG. 18 is a diagram illustrating a thin film generation rate of a sputtering apparatus according to a sixth embodiment.

FIG. 19 is a cross-sectional view illustrating the structure of another electromagnet of the sputtering apparatus according to the sixth embodiment.

FIG. 20 is a schematic sectional view showing a conventional sputtering apparatus.

FIG. 21 is a diagram of a conventional sputtering electrode having magnets on the front and back surfaces of a target.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 Chamber 6, 46 Target 7, 47 Sputtering electrode 10 Magnet arrange | positioned along a pair of edge of a target 12 Substrate 14 Magnet arrange | positioned on the back side of the target which has a moving mechanism 15 Arranged along the edge of a target Magnets 16 Magnets 17 and 57 arranged on the back side of a target having a moving mechanism Electromagnets arranged along the edge of the target

Claims (20)

[Claims] 1. A sputtering apparatus for performing sputtering using a rectangular target (6), wherein a first rod-shaped magnet (10) is arranged along a pair of edges of the target (6), and A sputtering apparatus characterized in that a rod-shaped second magnet (14) is movably arranged on the back side. 2. The first magnet (10) is determined such that polarities thereof are opposite to each other, and the second magnet (14) has a different pole from the mutually facing magnetic pole of the first magnet on the back surface of the target. The sputtering apparatus according to claim 1, wherein the sputtering apparatus is set to face each other. 3. The sputtering apparatus according to claim 1, wherein the second magnet reciprocates in a range corresponding to the space between the first magnets on the back side of the target. 4. The sputtering apparatus according to claim 1, wherein said second magnet (14) is constituted by a plurality of rod-shaped magnets. 5. A sputtering apparatus for performing sputtering using a round target (46), wherein a third magnet (15) facing an edge of the target is arranged, and a fourth magnet (1) is provided on the back side of the target.
A sputtering apparatus characterized in that 6) is arranged so as to be able to move substantially in a circle. 6. The polarity of the third magnet (15) is determined such that the same polarity faces the center of the target, and the fourth magnet (16) is a pole of the third magnet facing the center of the target. The sputtering apparatus according to claim 5, wherein a pole different from the target is set to face the back surface of the target. 7. The sputtering apparatus according to claim 5, wherein the number of the fourth magnets (16) is plural. 8. The sputtering apparatus according to claim 5, wherein said fourth magnet (16) makes a spiral movement. 9. A sputtering apparatus for performing sputtering using a round target (46), wherein a plurality of electromagnets (17, 5) facing edges of the target are provided.
7), wherein the magnetic pole of the electromagnet is changed with time. 10. The sputtering apparatus according to claim 9, wherein the electromagnet can independently control poles facing the inside of the target. 11. The sputtering apparatus according to claim 9, wherein the number of the electromagnets is an even number of four or more. 12. The sputtering apparatus according to claim 9, wherein the coil of the electromagnet is located on the atmosphere side of a vacuum chamber. 13. A rod-shaped first magnet (10) is arranged using a rectangular target (6) along a pair of edges of the target (6), and a rod-shaped first magnet (10) is provided on the back side of the target. In a sputtering method in which sputtering is performed in a state in which two magnets (14) are movably arranged, sputtering is performed while moving the second magnet on the back surface side of the target, and the direction of magnetic flux is changed over time to obtain a target surface. A sputtering method characterized in that the above plasma density is substantially averaged over time. 14. The polarity of the first magnet (10) is determined so that the same polarity faces each other, and the second magnet (14)
14. The sputtering method according to claim 13, wherein a pole different from the mutually facing magnetic poles of the first magnet is set to face a back surface of the target. 15. The sputtering method according to claim 13, wherein the second magnet reciprocates in a range corresponding to between the first magnets on the back side of the target. 16. A third magnet (15) facing an edge of the target using a round target (46), and a fourth magnet (1) provided on the back side of the target.
6) In a sputtering method in which sputtering is performed in a state where the target is movably disposed, the sputtering is performed while causing the fourth magnet to move in a substantially circular motion on the back surface side of the target, and the direction of magnetic flux is temporally changed, and Characterized in that the plasma density in the step (c) is substantially averaged over time. 17. The polarity of the third magnet (15) is determined such that the same polarity faces the center of the target, and the fourth magnet (16) is a pole of the third magnet facing the center of the target. 17. The sputtering method according to claim 16, wherein a pole different from the target is set to face the back surface of the target. 18. The sputtering method according to claim 16, wherein the fourth magnet (16) makes a spiral movement. 19. Using a round target (46), a plurality of electromagnets (17, 5) facing the edge of the target.
(7) In the sputtering method in which sputtering is performed in the state in which (7) is arranged, the magnetic pole of the electromagnet is changed with time to change the direction of magnetic flux, and the direction in which electrons in the plasma receive a force (93).
And the plasma density on the target surface is made substantially uniform on a time-average basis. 20. The magnetic pole of the electromagnet is changed over time to change the direction of the magnetic flux, and the direction (93) of receiving the force of the electrons in the plasma is rotated by 360 ° to change the plasma on the target surface. 20. The sputtering method according to claim 19, wherein the density is made substantially uniform over time.