CN114032516B - Magnetic source module for magnetron sputtering equipment and magnetron sputtering equipment - Google Patents
Magnetic source module for magnetron sputtering equipment and magnetron sputtering equipment Download PDFInfo
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- CN114032516B CN114032516B CN202110769415.5A CN202110769415A CN114032516B CN 114032516 B CN114032516 B CN 114032516B CN 202110769415 A CN202110769415 A CN 202110769415A CN 114032516 B CN114032516 B CN 114032516B
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- 238000001755 magnetron sputter deposition Methods 0.000 title claims abstract description 35
- 239000013077 target material Substances 0.000 claims abstract description 17
- 238000004544 sputter deposition Methods 0.000 claims description 11
- 239000011248 coating agent Substances 0.000 abstract description 19
- 238000000576 coating method Methods 0.000 abstract description 19
- 239000000463 material Substances 0.000 abstract description 6
- 239000000758 substrate Substances 0.000 description 31
- 238000007747 plating Methods 0.000 description 22
- 238000010586 diagram Methods 0.000 description 20
- 150000002500 ions Chemical class 0.000 description 11
- 238000009826 distribution Methods 0.000 description 7
- 230000005684 electric field Effects 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 230000006698 induction Effects 0.000 description 5
- 238000005240 physical vapour deposition Methods 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 230000009471 action Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000033001 locomotion Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 239000007888 film coating Substances 0.000 description 3
- 238000009501 film coating Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910000828 alnico Inorganic materials 0.000 description 2
- 238000000429 assembly Methods 0.000 description 2
- 230000000712 assembly Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 230000005389 magnetism Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 150000002910 rare earth metals Chemical class 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 229910000859 α-Fe Inorganic materials 0.000 description 2
- 229910000926 A-3 tool steel Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 229910001004 magnetic alloy Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The application relates to a magnetic source module for a magnetron sputtering device and the magnetron sputtering device, wherein the magnetic source module comprises a magnet module; the magnet module is rotatably arranged on the back of the cathode target material of the magnetron sputtering equipment; the magnet module comprises a plurality of first magnets and a plurality of second magnets, and the polarities of one end of the first magnets, which is away from the cathode target, and one end of the second magnets, which is away from the cathode target, are opposite. A part of the plurality of first magnets is a first electromagnet, and the other part is a first permanent magnet; one part of the plurality of second magnets is a second electromagnet, and the other part is a second permanent magnet. The permanent magnet can generate a magnetic field without external intervention, and is convenient to install and low in cost; the magnetic field can be controlled by changing the current supplied to the electromagnet, so that the uniformity of the coating can be improved; and because the number of the electromagnets is only a part of the whole magnets, the number of the used wire harnesses is less, the wire harness arrangement is simpler, the financial resources required for purchasing the wire harnesses are less, and the labor cost and the material cost of the whole equipment are reduced.
Description
Technical Field
The present application relates to the field of physical vapor deposition (Physical Vapor Deposition, PVD), and more particularly, to a magnetic source module for a magnetron sputtering apparatus and a magnetron sputtering apparatus.
Background
In recent years, with the continuous development of industries such as functional film preparation, wearable equipment, flexible display and solar energy in China, PVD film forming technology is paid attention to and has become a development hot spot in the related field of semiconductors. The magnetron sputtering technology has the advantages of low film forming temperature, good film forming compactness, high growth rate, convenient regulation of process parameters, environmental friendliness and the like, and is widely applied to Aluminum Nitride (AlN) piezoelectric films, conductive films, indium tin oxide (Indium Tin Oxides) films, solar cells and Light-emitting Diode (LED) industries.
The existing magnetron sputtering system mainly comprises a cathode target, a substrate and a permanent magnet assembly, and the working principle of the magnetron sputtering system is that negative bias is applied to the cathode target so that sputtering gas is broken down to generate glow discharge. Ionized gas ions (typically argon (Ar) ions) generated during the discharge process are accelerated to bombard the target surface by a high-energy electric field. On the one hand, the bombardment of the ionized gas ions on the target surface leads atoms on the surface of the target to be separated from the target surface to become sputtering atoms and finally deposited on the surface of the substrate; on the other hand, secondary electrons are emitted from the surface of the target material and enter a glow discharge plasma region, and the secondary electrons entering the plasma region move under the constraint action of a target surface magnetic field and continuously collide with sputtering gas atoms to ionize the sputtering gas atoms, so that the target material atoms are continuously sputtered to a substrate.
However, with the continuous development of high-end manufacture in China, each related field puts higher demands on the thickness uniformity of the film prepared by magnetron sputtering, however, the current magnetron sputtering system has very high cost in order to meet the thickness uniformity demands.
Disclosure of Invention
In view of the above-mentioned prior art deficiency, an object of the present application is to provide a magnetron sputtering apparatus and a magnetron sputtering apparatus, which aim to solve the uniformity problem of coating a large target multi-substrate and reduce the cost of the whole magnetron sputtering system.
A first aspect of the present application provides a magnetic source module for a magnetron sputtering apparatus, comprising: a magnet module; the magnet module is rotatably arranged on the back of the cathode target material of the magnetron sputtering equipment; the magnet module comprises a plurality of first magnets and a plurality of second magnets, and the polarities of one end of the first magnets, which is away from the cathode target, and one end of the second magnets, which is away from the cathode target, are opposite; a part of the plurality of first magnets is a first electromagnet, and the other part of the plurality of first magnets is a first permanent magnet; and one part of the second magnets is a second electromagnet, and the other part is a second permanent magnet.
According to the magnetic source module, the magnetic field can be generated by the permanent magnet without external intervention in a mode of combining the electromagnet and the permanent magnet, so that the installation is convenient, and the cost is low; the magnetic field can be controlled by changing the current supplied to the electromagnet, so that the uniformity of the coating can be improved; and because the number of the electromagnets is only a part of the whole magnets, the number of the used wire harnesses is small, so that the wire harness arrangement is simpler, the financial resources required for purchasing the wire harnesses are small, and the labor cost and the material cost of the whole equipment are greatly reduced. In summary, through the mode of combining the electromagnet and the permanent magnet, the uniformity of the coating can be ensured, and the cost of the whole equipment can be reduced.
In some embodiments, at least some of the plurality of first electromagnets are disposed in series, and/or at least some of the plurality of second electromagnets are disposed in series. Therefore, the uniformity of the plating film can be well regulated in a short time, and the phenomenon that the magnetic field intensity is regulated inconspicuously due to the fact that the first electromagnet and/or the second electromagnet are not concentrated is prevented.
In some embodiments, at least a portion of the plurality of first electromagnets is disposed corresponding to at least a portion of the plurality of second electromagnets such that a toroidal magnetic field is generated therebetween. Therefore, the density of Ar ions ionized out at the corresponding position can be quickly adjusted, and the speed of adjusting the uniformity of the coating is improved.
In some embodiments, a plurality of the first magnets are looped one round to form an inner ring magnet assembly and a plurality of the second magnets are looped one round to form an outer ring magnet assembly that surrounds the inner ring magnet assembly. The inner and outer magnets are arranged, the magnets are distributed uniformly, the uniformity of the generated magnetic field is increased, and the uniformity of the coating can be improved. The magnet which is wound into two circles is particularly suitable for equipment with smaller cathode target models, and when the cathode target models are smaller, the magnet is wound into two circles, so that the magnet can form an annular magnetic field in an effective space, and the magnetic field strength is stronger.
Wherein the center of rotation of the magnet module is located between the inner ring magnet assembly and the outer ring magnet assembly. When the magnet module rotates, stable magnetic fields are always arranged at and near the rotation center, and the situation that magnetic fields and no magnetic fields alternate with each other does not occur along with the rotation, so that the cathode target is uniformly consumed, and the uniformity of a coating can be improved.
In other embodiments, the plurality of first magnets and the plurality of second magnets form a magnet ring around one revolution. The magnets are uniformly distributed, so that the uniformity of the generated magnetic field is increased, and the uniformity of the coating can be improved. The magnet which is wound into a circle is particularly suitable for equipment with a large cathode target model, when the cathode target model is large, the magnet is wound into a circle, the magnet can be conveniently arranged, and the magnetic field strength is high.
The rotating center of the magnet module is positioned in the magnet ring and is staggered with the center of the magnet ring. When the magnet module rotates, stable magnetic fields are always arranged at and near the rotation center, and the situation that magnetic fields and no magnetic fields alternate with each other does not occur along with the rotation, so that the cathode target is uniformly consumed, and the uniformity of a coating can be improved.
In some embodiments, the projection of the center of rotation of the magnet module onto the cathode target is located at a central region of the cathode target; the projections of the first electromagnets on the cathode target are positioned in the middle area of the cathode target and/or the edge area of the cathode target; the projections of the second electromagnets on the cathode target are positioned in the middle area of the cathode target and/or the edge area of the cathode target; the middle area of the cathode target material surrounds the central area of the cathode target material, and the edge area of the cathode target material surrounds the middle area of the cathode target material.
Thus, by changing the magnitude of the current supplied to the first electromagnet and/or the second electromagnet, the plating uniformity in the middle region and/or the edge region of the substrate can be adjusted, so that the situation in which the middle region and the edge region are liable to be uneven is improved.
In some embodiments, the magnet module further comprises a first yoke and a second yoke; the first yoke has a first surface, the second yoke has a second surface, and the first surface and the second surface face each other; the two ends of the plurality of first magnets are fixedly connected with the first surface and the second surface respectively, and the two ends of the plurality of second magnets are fixedly connected with the first surface and the second surface respectively. The first magnetic yoke and the second magnetic yoke do not produce magnetic fields, only play a role in magnetic line transmission in the magnetic circuit, and the first magnetic yoke and the second magnetic yoke can restrict magnetic leakage of the induction coil to diffuse outwards.
In some embodiments, one of the first and second yokes includes a first sub-yoke fixed with the plurality of first magnets and a second sub-yoke fixed with the plurality of second magnets. Therefore, the first magnet and the second magnet can be connected well, the volumes of the first magnetic dividing yoke and the second magnetic dividing yoke are smaller, resources are saved, and the weight of the whole magnetic source module is reduced.
In some embodiments, the magnetic source module further includes a balance plate parallel to the first surface, one side of the balance plate is fixedly connected to the first yoke or the second yoke, and the other side of the balance plate extends away from the first yoke. In order to prevent the magnetic source module from shaking during rotation and increase the accuracy of film coating, the balance plate is arranged and is more particularly fixed at the position of the first magnetic yoke close to the rotating shaft, so that the magnetic source module is balanced.
A second aspect of the present application provides a magnetron sputtering apparatus comprising a sputtering chamber and a magnetron source module as claimed in any of the first aspects of the present application, the magnetron source module being disposed in the sputtering chamber. After the magnetron sputtering equipment is applied to the magnetron source module, the thickness of a coating film on the substrate can be uniform, and the consistency is high.
Drawings
Fig. 1 is a schematic structural diagram of a magnetic source module according to an embodiment of the present application.
FIG. 2 is a schematic diagram of a usage status structure of the magnetic source module shown in FIG. 1.
FIG. 3 is a schematic view of another usage status of the magnetic source module shown in FIG. 1.
Fig. 4 is a schematic structural diagram of a magnetic source module according to another embodiment of the present application.
FIG. 5 is a schematic diagram of the correspondence between the magnetic source module and the cathode target shown in FIG. 1.
Fig. 6 is a schematic diagram of a distribution of the first and second magnets shown in fig. 1.
Fig. 7 is a schematic diagram of another distribution of the first and second magnets shown in fig. 1.
Fig. 8 is a schematic view of still another distribution of the first and second magnets shown in fig. 1.
Fig. 9 is a schematic structural diagram of a magnetic source module according to another embodiment of the present application.
Fig. 10 is a schematic structural diagram of a magnetic source module according to another embodiment of the present disclosure.
FIG. 11 is a schematic diagram illustrating another direction of the magnetic source module shown in FIG. 1.
FIG. 12 is a schematic view of the magnetic source module of FIG. 1 in another direction.
FIG. 13 is a schematic diagram illustrating a structure of the magnetic source module shown in FIG. 1 in a further direction.
Reference numerals illustrate: 100-magnet module, 110-first magnet, 111-first electromagnet, 112-first permanent magnet, 120-second magnet, 121-second electromagnet, 122-second permanent magnet; 130-first yoke, 131-first surface, 140-second yoke, 141-first sub-yoke, 142-second sub-yoke, 150-balance plate, 160-rotation axis, 200-cathode target, 300-substrate, a-center region, b-middle region, c-edge region, d-plasma region.
Detailed Description
In order to facilitate an understanding of the present application, a more complete description of the present application will now be provided with reference to the relevant figures. Preferred embodiments of the present application are shown in the accompanying drawings. This application may, however, be embodied in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.
The magnetron sputtering equipment is used as equipment commonly used in PVD film forming technology, and the more specific working principle of magnetron sputtering is that electrons collide with Ar atoms in the process of flying to a substrate under the action of an electric field E, so that Ar positive ions and new electrons are generated by ionization of the electrons. Wherein, new electrons fly to the substrate, ar ions fly to the cathode target material in an accelerating way under the action of an electric field, and bombard the surface of the target material with high energy, so that the cathode target material is sputtered. In the sputtered particles, neutral target atoms or molecules are deposited on a substrate to form a film, and secondary electrons generated by the deposition are subjected to an electric field and a magnetic field, so that the secondary electrons drift in a direction indicated by E (electric field) x B (magnetic field), namely E x B drift, and the motion track approximates a cycloid. During the movement, electrons are bound in a plasma region of the magnetic field, and a large amount of Ar ions are ionized in the plasma region to bombard the cathode target, so that a film layer is deposited on the substrate. As the number of collisions increases, the energy of the secondary electrons is depleted, gradually moving away from the target surface and eventually depositing on the substrate under the influence of the electric field E.
The current technology has a non-uniform film thickness at the sputtered layer on the substrate. Uneven thickness of the film layer on the substrate can directly affect the product yield of the substrate and the service life of the finished product finally processed. In order to solve the above problems, a method of generating a magnetic field by an electromagnet is adopted, and specifically, the magnitude of the magnetic field is changed by adjusting the magnitude of the current supplied to the electromagnet, so that the thickness of the plating film is adjusted, and the uniformity of the plating film is improved.
However, after the electromagnets are all adopted, the number of wire harnesses for supplying power to the electromagnets is extremely large, the space is occupied, the whole magnetron sputtering equipment is very complicated to assemble, the time consumption is long, a large amount of financial resources are also required for purchasing the wire harnesses, and therefore, the labor cost and the material cost of the whole equipment are very high.
Referring to fig. 1 to 3, fig. 1 is a schematic structural diagram of a magnetic source module according to an embodiment of the present application, fig. 2 is a schematic structural diagram of a use state of the magnetic source module shown in fig. 1, and fig. 3 is a schematic structural diagram of another use state of the magnetic source module shown in fig. 1. In order to solve the above-described problems, the present embodiment provides a magnetic source module for a magnetron sputtering apparatus, the magnetic source module including a magnet module 100; the magnet module 100 is rotatably disposed at the back of the cathode target 200 of the magnetron sputtering apparatus. The substrate 300 to be coated is generally located on the front surface of the cathode target 200.
The magnet module 100 includes a plurality of first magnets 110 and a plurality of second magnets 120, and the polarities of the ends of the first magnets 110 facing away from the cathode target 200 and the ends of the second magnets 120 facing away from the cathode target 200 are opposite. A part of the first magnets 110 is a first electromagnet 111, and the other part is a first permanent magnet 112; a part of the plurality of second magnets 120 is a second electromagnet 121, and another part is a second permanent magnet 122.
Because the polarities of the first magnet 110 and the second magnet 120 are opposite, a magnetic induction line loop is generated between the first magnet 110 and the second magnet 120, the secondary electrons swing along the magnetic induction line and whirl, and a large amount of Ar ions are ionized in the plasma region d to bombard the cathode target 200, so that a film layer is deposited on the substrate 300. The magnet modules are rotatably arranged, so that the magnetic induction loop formed by the magnet modules corresponds to each region of the cathode target 200, thereby improving the uniformity of the plating film.
The first permanent magnet 112 and the second permanent magnet 122 themselves have constant magnetism; while the first electromagnet 111 and the second electromagnet 121 need to be connected with a wire harness to supply power to the first electromagnet 111 and the second electromagnet 121, the first electromagnet 111 and the second electromagnet 121 have magnetism after power is supplied. The magnitude of the current will directly affect the magnitude of the magnetic field of the first electromagnet 111, and of course, the magnitude of the current will also directly affect the magnitude of the magnetic field of the second electromagnet 121. The larger the current, the larger the magnetic field generated, the smaller the current, and the smaller the magnetic field generated. The magnetic field directly influences the density of the formed magnetic field, the larger the magnetic field is, the larger the formed magnetic field density is, the larger the density of the restrained secondary electrons is, the more Ar ions are ionized, and the consumed cathode target 200 is correspondingly increased; the smaller the magnetic field, the smaller the density of the magnetic field formed and the smaller the density of the secondary electrons confined, the fewer ionized Ar ions and a corresponding reduction in the consumed cathode target 200.
Therefore, by varying the magnitude of the current supplied to the first electromagnet 111 and the magnitude of the current supplied to the second electromagnet 121, the magnitude of the magnetic field generated by the entire magnet module 100 can be controlled, thereby improving the plating film uniformity. Specifically, for example, when it is found that the film layer on a place is thinner than other places after the film plating of the previous substrate 300 is completed, when the film plating is performed on the next substrate 300, the current supplied to the first electromagnet 111 and the second electromagnet 121 is increased, so that the sputtered target atoms are increased, and the thickness of the thinner film layer is compensated, thereby improving the film plating uniformity. Of course, the same reason is that when the film coating of the previous substrate 300 is found to be thicker at a certain position than at other positions, the current supplied to the first electromagnet 111 and the second electromagnet 121 is reduced when the next substrate 300 is coated, so that the sputtered target atoms are reduced, the thicker position of the film is thinned, and the uniformity of the film coating is improved.
The magnetic source module provided by the embodiment of the application is characterized in that the magnetic source module is combined by the electromagnet and the permanent magnet, wherein the permanent magnet can generate a magnetic field without external intervention, and the magnetic source module is convenient to install and low in cost; the magnetic field density can be controlled by changing the current supplied to the electromagnet, so that the uniformity of the plating film can be improved; and because the number of the electromagnets is only a part of the whole magnets, the number of the used wire harnesses is small, so that the wire harness arrangement is simpler, the financial resources required for purchasing the wire harnesses are small, and the labor cost and the material cost of the whole equipment are greatly reduced. In summary, the magnetic source module provided by the embodiment of the application can ensure the uniformity of the coating film and reduce the cost of the whole equipment through the combination of the electromagnet and the permanent magnet.
In the above embodiment, the first electromagnet 111 and the second electromagnet 121 may each be made as follows: the core is used as a battery core, and then a coil is wound outside. The first permanent magnet 112 and the second permanent magnet 122 may each be made as follows: the permanent magnet is prepared by using one or a plurality of permanent magnets of permanent magnetic ferrite, ndFeB (NdFeB) base permanent magnet, smCo (SmCo) base permanent magnet, mn-Bi (MnBi), alNiCo (AlNiCo) and the like, and of course, alloy materials can be adopted, and the raw materials for preparing the alloy can be as follows: rare earth neodymium, rare earth samarium, pure iron, aluminum, ferroboron, etc., without limitation in this embodiment.
It will of course be appreciated that at least part of the plurality of first electromagnets 111 is disposed in series and at least part of the plurality of second electromagnets 121 is disposed in series. Thus, the uniformity of the plating film can be well adjusted in a short time, and the phenomenon that the adjustment of the magnetic field density is not obvious due to the fact that the first electromagnet 111 and/or the second electromagnet 121 are not concentrated can be prevented.
It will also be appreciated by those skilled in the art that at least a portion of the plurality of first electromagnets 111 and at least a portion of the plurality of second electromagnets 121 are disposed so as to produce a toroidal magnetic field therebetween. Therefore, the sputtering density of the target atoms at the corresponding positions can be quickly adjusted, and the speed of adjusting the uniformity of the coating is improved.
It will be appreciated by those skilled in the art that smaller magnet assemblies may be used where the cathode target 200 is smaller in size, and that larger magnet assemblies may be used where the cathode target 200 is larger in size, as desired, depending on the uniformity of the coating. Then, a circle of magnets can be arranged for the small-sized cathode target 200; two turns of magnets may be provided for large cathode targets 200.
Specifically, in some embodiments, the plurality of first magnets 110 are wound one turn to form an inner ring magnet assembly, and the plurality of second magnets 120 are wound one turn to form an outer ring magnet assembly that surrounds the inner ring magnet assembly. That is, the first magnet 110 and the second magnet 120 are arranged in two inner and outer circles, and the polarities of the same ends of the inner and outer circles are opposite, thereby forming a toroidal magnetic field. Under the action of the annular magnetic field, the secondary electrons do swinging and rotating motion on the target surface in a similar cycloid form, at the moment, the motion path of the secondary electrons is longer and is restrained in a plasma area d close to the target surface, and a large amount of Ar ions are ionized in the plasma area d to bombard the target material, so that a high deposition rate is realized.
The inner and outer magnets are arranged, the magnets are distributed uniformly, the uniformity of the generated magnetic field is increased, and the uniformity of the coating can be improved. The magnet which is wound into two circles is particularly suitable for equipment with larger cathode target 200, when the cathode target 200 is of larger size, the magnet is wound into two circles, so that the magnet can form an annular magnetic field with larger density in an effective space, and the use requirement can be met.
Illustratively, the center of rotation of the magnet module 100 is located between the inner ring magnet assembly and the outer ring magnet assembly. Then, when the magnet module 100 rotates, a stable magnetic field is always provided at and near the rotation center, so that the situation that the magnetic field and the non-magnetic field alternate with each other does not occur along with the rotation, the cathode target 200 is uniformly consumed, and the uniformity of the plating film can be improved.
For example, the inner ring magnet assembly may be wound in any one of a circular shape, an elliptical shape, a waist shape, and a heart shape, and the outer ring magnet assembly may be wound in any one of a circular shape, an elliptical shape, a waist shape, and a heart shape. The above-mentioned shapes are provided, and the magnetic field intensity of each part of the generated ring magnetic field can be uniformly distributed when the magnet module 100 rotates, thereby preventing the occurrence of locally stronger or locally weaker conditions and thus increasing the uniformity of the plating film.
The shape of the inner ring magnet assembly and the outer ring magnet assembly, which are wound, can be set to be different according to the actual space, so that the space can be better utilized. In order to make the inner ring magnet assembly and the outer ring magnet assembly generate the annular magnetic field better, the inner ring magnet assembly and the outer ring magnet assembly can be selected to be wound in the same shape.
Referring to fig. 4, fig. 4 is a schematic structural diagram of a magnetic source module according to another embodiment of the present application. In another embodiment, the plurality of first magnets 110 and the plurality of second magnets 120 are formed into a magnet ring around one turn, and the plurality of first magnets 110 are disposed continuously, and the plurality of second magnets 120 are disposed continuously. That is, the plurality of first magnets 110 and the plurality of second magnets 120 are formed in a circle, thereby forming a ring-shaped magnetic field and finally improving the uniformity of the plating film.
The magnets are uniformly distributed, so that the uniformity of the generated magnetic field is increased, and the uniformity of the coating can be improved. The magnet which is wound into one circle is particularly suitable for equipment with smaller model of the cathode target 200, when the model of the cathode target 200 is smaller, the magnet is wound into one circle, the magnet can be conveniently arranged, and the magnetic field density can meet the use requirement of the small-sized cathode target 200.
The magnet ring may be circular, elliptical, or heart-shaped, and the magnetic field strength of each part of the generated ring-shaped magnetic field may be uniformly distributed when the magnet module 100 rotates, thereby preventing the occurrence of local strong or weak magnetic field strength and improving the uniformity of the plating film.
Illustratively, the center of rotation of the magnet module 100 is located within the magnet ring and is offset from the center of the magnet ring. Then, when the magnet module 100 rotates, a stable magnetic field is always provided at and near the rotation center, and the situation that the magnetic field is not uniform along with the rotation is avoided, so that the cathode target 200 is uniformly consumed, and the uniformity of the plating film can be improved.
It will be appreciated that the first and second electromagnets 111, 121 may be disposed in any position, of course, with the plurality of first electromagnets 111 being disposed at least partially in series and the plurality of second electromagnets 121 being disposed at least partially in series. The density of sputtered atoms at the corresponding portions of the cathode target 200 of the first electromagnets 111 and/or the second electromagnets 121 can be adjusted, that is, the thickness of the film at the corresponding portions of the substrate 300 to be coated can be adjusted.
In actual use, the first electromagnet 111 and/or the second electromagnet 121 may be disposed corresponding to a position on the substrate 300 where a problem is likely to occur in the thickness of the film.
Referring to fig. 5 to 10, fig. 5 is a schematic diagram of a correspondence relationship between a magnetic source module and a cathode target shown in fig. 1, fig. 6 is a schematic diagram of a distribution situation of a first magnet and a second magnet shown in fig. 1, fig. 7 is a schematic diagram of another distribution situation of the first magnet and the second magnet shown in fig. 1, fig. 8 is a schematic diagram of another distribution situation of the first magnet and the second magnet shown in fig. 1, fig. 9 is a schematic diagram of a structure of a magnetic source module provided in another embodiment of the present application, and fig. 10 is a schematic diagram of a structure of a magnetic source module provided in another embodiment of the present application.
It will also be appreciated by those skilled in the art that, since the coating is generally performed on the substrate 300, the coating is likely to be uneven at the edge and middle positions, the plurality of first electromagnets 111 and/or the plurality of second electromagnets 121 may be disposed at the middle region b or the edge region c of the corresponding cathode sheet material.
That is, a projection of the rotation center of the magnet module 100 on the cathode target 200 may be disposed at the center region a of the cathode target 200. The projections of the plurality of first electromagnets 111 on the cathode target 200 are located in the middle area b of the cathode target 200 and/or the edge area c of the cathode target 200; the projections of the second electromagnets 121 on the cathode target 200 are located in the middle region b of the cathode target 200 and/or the edge region c of the cathode target 200. The middle region b of the cathode target 200 surrounds the central region a of the cathode target 200, and the edge region c of the cathode target 200 surrounds the middle region b of the cathode target 200.
Referring to fig. 5, the center region a, the middle region b, and the edge region c are sequentially radiated outward from the center of the cathode target 200. Taking a circular shape with a radius of 50cm as an example, that is, a surface of the cathode target 200 facing the magnetic source module is a circular shape with a radius of 50 cm. The specific range of the central area a is as follows: the center point of the surface of the cathode target 200 facing the magnet module 100 is used as a center, and the radius is within 10 cm. The specific range of the middle region b is as follows: ranging from the boundary of the central region a to a radius of between 20cm and 30 cm. The specific range of the edge area c is as follows: from the boundary of the middle region b to the extreme edge of the cathode target 200.
Specifically, that is, the specific distribution positions of the first electromagnet 111 and the second electromagnet 121 may be in the following cases.
Referring to fig. 6, the first: the projections of the first electromagnets 111 on the cathode target 200 are located in the middle region b of the cathode target 200, and the projections of the second electromagnets 121 on the cathode target 200 are located in the middle region b of the cathode target 200. At this time, a ring-shaped magnetic field may be generated between the plurality of first electromagnets 111 and the plurality of second electromagnets 121, and the uniformity of the plating film in the middle region b of the substrate 300 may be adjusted by varying the magnitude of the current supplied to the first electromagnets 111 and/or the second electromagnets 121, so that the situation in which the non-uniformity is easily occurred in the middle edge region is improved.
Referring to fig. 7, the second type: the projections of the first electromagnets 111 on the cathode target 200 are located in the edge region c of the cathode target 200, and the projections of the second electromagnets 121 on the cathode target 200 are located in the edge region c of the cathode target 200. At this time, a ring-shaped magnetic field may be generated between the plurality of first electromagnets 111 and the plurality of second electromagnets 121, and the uniformity of the plating film of the edge region c of the substrate 300 may be adjusted by varying the magnitude of the current supplied to the first electromagnets 111 and/or the second electromagnets 121, so that the situation in which the edge region c is likely to be uneven is improved.
Referring to fig. 8, a third type, a portion of the first electromagnet 111 projected onto the cathode target 200 is located in a middle region b of the cathode target 200, and a portion of the second electromagnet 121 projected onto the cathode target 200 is located in a middle region b of the cathode target 200; a projection of the other part of the first electromagnet 111 onto the cathode target 200 is located at an edge region c of the cathode target 200, and a projection of the other part of the second electromagnet 121 onto the cathode target 200 is located at the edge region c of the cathode target 200. At this time, a part of the first electromagnet 111 and a part of the second electromagnet 121 are disposed correspondingly, and a ring-shaped magnetic field may be generated; by changing the magnitude of the current supplied to the partial first electromagnet 111 and/or the partial second electromagnet 121, the plating film uniformity of the middle region b of the substrate 300 can be adjusted, so that the situation in which the middle region b is liable to be uneven is improved. The other part of the first electromagnet 111 and the other part of the second electromagnet 121 are disposed correspondingly, and can generate a toroidal magnetic field; by changing the magnitude of the current supplied to the other part of the first electromagnet 111 and/or the other part of the second electromagnet 121, the film plating uniformity of the edge region c of the substrate 300 can be adjusted, so that the situation in which the edge region c is liable to be uneven is improved.
Of course, it will be appreciated that when it is desired to adjust the thickness of the film at the edge and middle of the substrate 300 simultaneously, the current levels of all the first electromagnets 111 and all the second electromagnets 121 may be adjusted simultaneously.
Referring to fig. 9, a fourth type: the projections of the first electromagnets 111 on the cathode target 200 are located in the middle region b of the cathode target 200, and the projections of the second electromagnets 121 on the cathode target 200 are located in the edge region c of the cathode target 200. At this time, a ring-shaped magnetic field is generated between the plurality of first permanent magnets 112 corresponding to the plurality of first electromagnets 111; by varying the amount of current supplied to the first electromagnet 111, the thickness of the plating film in the middle of the substrate 300 can be adjusted. The plurality of second electromagnets 121 may generate an annular magnetic field between their corresponding plurality of second permanent magnets 122; by varying the amount of current supplied to the second electromagnet 121, the thickness of the plating film at the edge of the substrate 300 can be adjusted.
Referring to fig. 10, the projections of the first electromagnets on the cathode target 200 are located in the middle region b of the cathode target 200, the projections of the second electromagnets on the cathode target 200 are located in the middle region b of the cathode target 200, and the projections of the second electromagnets on the cathode target 200 are located in the edge region c of the cathode target 200.
Referring to fig. 11 to 13, fig. 11 is a schematic view illustrating another direction of the magnetic source module shown in fig. 1, fig. 12 is a schematic view illustrating another direction of the magnetic source module shown in fig. 1, and fig. 13 is a schematic view illustrating another direction of the magnetic source module shown in fig. 1.
In some embodiments, the magnet module 100 further includes a first yoke 130 and a second yoke 140; the first yoke 130 has a first surface 131, the second yoke 140 has a second surface, and the first surface 131 and the second surface face each other; the two ends of the plurality of first magnets 110 are fixedly connected with the first surface 131 and the second surface, and the two ends of the plurality of second magnets 120 are fixedly connected with the first surface 131 and the second surface. That is, the plurality of first magnets 110 and the plurality of second magnets 120 are each located between the first yoke 130 and the second yoke 140. The first and second yokes 130 and 140 may be made of soft iron, A3 steel, soft magnetic alloy, or ferrite material having relatively high magnetic permeability. The first and second yokes 130 and 140 do not generate a magnetic field themselves, and only act as magnetic line transmission in the magnetic circuit, and the first and second yokes 130 and 140 can restrict the leakage flux of the induction coil from diffusing outwards.
Specifically, one of the first yoke 130 and the second yoke 140 includes a first sub-yoke 141 and a second sub-yoke 142, the first sub-yoke 141 being fixed to the plurality of first magnets 110, and the second sub-yoke 142 being fixed to the plurality of second magnets 120. For convenience of description, taking the first yoke 130 as an integral body, the second yoke 140 includes a first sub-yoke 141 and a second sub-yoke 142, where the first yoke 130 is integrally formed, not only preventing the leakage flux from diffusing outwards, but also playing a role in supporting the whole magnetic source module, and specifically, the first sub-yoke 141 and the second sub-yoke 142 are both annular, and referring to the direction in the drawing, the lower surface of the first sub-yoke 141 is in contact with the upper end surface of the first magnet 110, so that the width of the first sub-yoke 141 may be set to be substantially identical to the width of the upper end surface of the first magnet 110. The lower surface of the second sub-yoke 142 is in contact with the upper end surface of the second magnet 120, and thus the width of the second sub-yoke 142 may be set to substantially coincide with the width of the upper end surface of the second magnet 120. Therefore, the first magnet 110 and the second magnet 120 can be well connected, and the volumes of the first sub-yoke 141 and the second sub-yoke 142 can be smaller, so that resources are saved, and the weight of the whole magnetic source module is reduced.
More specifically, the magnetic source module is driven to rotate by the motor, wherein the rotating shaft 160 can be disposed on the first magnetic yoke 130, the rotating shaft 160 is connected with the motor, the motor acts to drive the rotating shaft 160 to rotate, and the rotating shaft 160 drives the first magnetic yoke 130 to rotate, and the first magnetic yoke 130, the second magnetic yoke 130, the first magnetic yoke 130, and the second magnetic yoke 140 are directly or indirectly fixed to the first magnetic yoke 130, so that the whole magnetic source module can be driven to rotate.
Because the magnetic source module can rotate, the magnetic source module does not need to be arranged corresponding to the whole cathode target 200, and only the magnetic field can cover the whole cathode target 200 when the magnetic source module rotates. The projection of the rotation center of the magnetic source module on the cathode target 200 is basically coincident with the center of the cathode target 200, so long as the magnetic source module can cover about half of the area of the cathode target 200, the magnetic field can be made to correspond to the whole cathode target 200 after the magnetic source module rotates.
Therefore, the rotating shaft 160 is disposed on the first magnetic yoke 130 and located at a position relatively to the edge of the first magnetic yoke 130, so that the magnetic field covers the whole cathode target 200 when the magnetic source module rotates.
In some embodiments, the magnetic source module further includes a balance plate 150 parallel to the first surface 131, one side of the balance plate 150 is fixedly connected to the first yoke 130 or the second yoke 140, and the other side of the balance plate 150 extends away from the first yoke 130. Since the rotation shaft 160 is located at a position of the first yoke 130, the magnetic source module may shake due to unstable center of gravity when rotating, thereby affecting the coating. In order to prevent the magnetic source module from shaking during rotation and increase the accuracy of the coating, the balance plate 150 is provided, and the balance plate 150 is more specifically fixed to the first yoke 130 near the rotation shaft 160, thereby balancing the magnetic source module.
Based on the magnetic source module provided by any of the above embodiments, the present application further provides a magnetron sputtering apparatus, which may further include a cathode target 200, a sputtering chamber, and other components besides the above magnetic source module, where the cathode target 200 and the magnetic source module are both disposed in the sputtering chamber, and the cathode target 200 is opposite to the magnetic source module. The present embodiment is not described in detail.
It is to be understood that the application of the present application is not limited to the examples described above, but that modifications and variations can be made by a person skilled in the art from the above description, all of which modifications and variations are intended to fall within the scope of the claims appended hereto.
Claims (7)
1. A magnetic source module for a magnetron sputtering apparatus, comprising: a magnet module; the magnet module is rotatably arranged on the back of the cathode target material of the magnetron sputtering equipment;
the magnet module comprises a plurality of first magnets and a plurality of second magnets, and the polarities of one end of the first magnets, which is away from the cathode target, and one end of the second magnets, which is away from the cathode target, are opposite; a part of the plurality of first magnets is a first electromagnet, and the other part of the plurality of first magnets is a first permanent magnet; a part of the plurality of second magnets is a second electromagnet, and the other part is a second permanent magnet;
the plurality of first magnets are wound around one circle to form an inner ring magnet assembly, and the plurality of second magnets are wound around one circle to form an outer ring magnet assembly, and the outer ring magnet assembly surrounds the inner ring magnet assembly; the shape of the inner ring magnet assembly is any one of a circle, an ellipse, a waist shape and a heart shape, and the shape of the outer ring magnet assembly is any one of a circle, an ellipse, a waist shape and a heart shape;
the magnet module further comprises a first magnetic yoke and a second magnetic yoke; the first yoke has a first surface, the second yoke has a second surface, and the first surface and the second surface face each other; the two ends of the plurality of first magnets are fixedly connected with the first surface and the second surface respectively, and the two ends of the plurality of second magnets are fixedly connected with the first surface and the second surface respectively;
the magnetic source module further comprises a balance plate parallel to the first surface, one side of the balance plate is fixedly connected with the first magnetic yoke or the second magnetic yoke, and the other side of the balance plate extends away from the first magnetic yoke.
2. The magnetic source module for a magnetron sputtering apparatus according to claim 1, wherein at least part of the plurality of first electromagnets are disposed continuously and/or at least part of the plurality of second electromagnets are disposed continuously.
3. The magnetic source module for a magnetron sputtering apparatus according to claim 1, wherein at least part of the plurality of first electromagnets is disposed corresponding to at least part of the plurality of second electromagnets so that a toroidal magnetic field is generated therebetween.
4. The magnetic source module for a magnetron sputtering apparatus according to claim 1, wherein a rotation center of the magnet module is located between the inner ring magnet assembly and the outer ring magnet assembly; alternatively, the rotation center of the magnet module is located in the magnet ring and is staggered from the center of the magnet ring.
5. The magnetic source module for a magnetron sputtering apparatus according to claim 1, wherein a projection of a rotation center of the magnet module onto the cathode target is located at a center region of the cathode target;
the projections of the first electromagnets on the cathode target are positioned in the middle area of the cathode target and/or the edge area of the cathode target; the projections of the second electromagnets on the cathode target are positioned in the middle area of the cathode target and/or the edge area of the cathode target; the middle area of the cathode target material surrounds the central area of the cathode target material, and the edge area of the cathode target material surrounds the middle area of the cathode target material.
6. The magnetic source module for a magnetron sputtering apparatus according to claim 1, wherein one of the first yoke and the second yoke includes a first sub-yoke fixed with the plurality of first magnets and a second sub-yoke fixed with the plurality of second magnets.
7. A magnetron sputtering apparatus comprising a sputtering chamber and the magnetic source module of any one of claims 1 to 6 disposed within the sputtering chamber.
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