CN104109840A - Magnetron sputtering cathode with magnetic field scanning function - Google Patents
Magnetron sputtering cathode with magnetic field scanning function Download PDFInfo
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- CN104109840A CN104109840A CN201410323751.7A CN201410323751A CN104109840A CN 104109840 A CN104109840 A CN 104109840A CN 201410323751 A CN201410323751 A CN 201410323751A CN 104109840 A CN104109840 A CN 104109840A
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Abstract
The invention provides a magnetron sputtering cathode with a magnetic field scanning function. The magnetron sputtering cathode comprises a target seat, first magnetic bodies and a second magnetic body, wherein the first magnetic bodies are arranged on the inner side walls at the periphery of the target seat and below the top plane of the target seat; the second magnetic body is movably arranged in the middle in the target seat and below the top plane of the target seat, and does a regular movement around the longitudinal central symmetric axis of the target seat. The magnetron sputtering cathode further comprises a cooling water way formed by a target material and the side walls of the target seat. According to the magnetron sputtering cathode, a moving and changing magnetic field is adopted, so that an etching region can be expanded, the target material can be uniformly etched and cannot be concentrated in a region, and the utilization rate of the target material is increased; the arc starting frequency of a target in a process can be reduced, and the quality of a membrane layer can be improved; the target material is directly cooled by water, so that the cooling effect can be improved, shutdown cooling can be reduced, and the quality of the membrane layer is stable.
Description
Technical field
The present invention relates to a kind of scanning magnetic field magnetic control sputtering cathode, belong to technical field of vacuum plating.
Background technology
Magnetron sputtering is a kind of important PVD coating technology and method, and technological process and quality product are affected obviously by negative electrode.Traditional magnetic control sputtering cathode adopts permanent magnet structure, and position immobilizes.
Traditional magnetic control sputtering cathode structure as shown in Figure 1a, target 1 is arranged on the target stand 2 with backboard, target 1 is arranged in the plane of backboard, backboard and target stand are formed for cooling cooling water channel 5, permanent magnet 3-A is fixedly installed on the below of target edge, the inside of target stand, permanent magnet 3-B is fixedly installed on the below in target axle center, the inside of target stand, and magnetic line of force 4 distributes fixing.
The negative electrode of this fixed magnets structure uses result as shown in Figure 1 b: target is only a fixing region etching, it is the target etch areas 6 in Fig. 1 b, for such a fixing region, along with the increase of etching, can cause bad stability, the power density of target surface changes of magnetic field, technique to change, and because etching only occurs in a relatively little and fixing region, the etching consumption of target is concentrated, and more and more faster, cause target to scrap too early.In addition, due to the needs of practical application, target often will work long hours under high power density, at this moment due to target cooling (cooling by backboard) indirectly, have to adopt service intermittent, for some time of working must quit work, cooling target for some time, cause like this production efficiency to reduce, film growth is forced to interrupt, and tends to produce the quality accidents such as coating layering.
Summary of the invention
In view of the defect that above-mentioned prior art exists, the object of the invention is a kind of scanning magnetic field magnetic control sputtering cathode, can expand etch areas, make target by even etching, but not concentrate on a region, can reduce and beat the arc frequency.
The present invention also aims to by scanning magnetic field magnetic control sputtering cathode of the present invention is provided, can improve the cooling performance of scanning magnetic field magnetic control sputtering cathode simultaneously, and it is cooling to reduce shut-down.
Object of the present invention is achieved by the following technical programs:
A kind of scanning magnetic field magnetic control sputtering cathode, this scanning magnetic field magnetic control sputtering cathode comprises target stand, the first magnet and the second magnet, described the first magnet is arranged on the inner side-wall of described target stand surrounding, the below of target stand top planes, and described the second magnet is movably arranged on the bosom of described target stand, the below of target stand top planes; Described the second magnet does regular motion around longitudinal center's symmetry axis of described target stand.
In above-mentioned scanning magnetic field magnetic control sputtering cathode, preferred, described the second magnet is set to end points shape magnet or long strip shape magnet according to the shape of target stand, and the profile of described end points shape magnet comprises circle, regular polygon or irregular polygon, but is not limited to this.
Above-mentioned end points shape magnet can not form obvious major and minor axis.
In above-mentioned scanning magnetic field magnetic control sputtering cathode, preferred, in the time that target stand is shaped as rectangle, described the second magnet is single long strip shape magnet, and longitudinal center's symmetry axis of the relative target stand of its symmetry centre does around circumferential motion.
In above-mentioned scanning magnetic field magnetic control sputtering cathode, preferably, in the time that target stand is shaped as rectangle, described the second magnet long strip shape magnet that the single magnet unit of at least two is combined to form of serving as reasons, described magnet unit is doing with in the parallel plane of target stand top planes the circumferential motion that radius is identical, and the center of circle set diad parallel with the second magnet with of target stand of all circumferential motion overlaps.
In above-mentioned scanning magnetic field magnetic control sputtering cathode, preferably, in the time that target stand is shaped as circle or regular polygon, described the second magnet is end points shape magnet, longitudinal center's symmetry axis of the relative target stand of described the second magnet does around circumferential motion, and how much axle center in the axle center of its circumferential motion and self do not overlap.
In above-mentioned scanning magnetic field magnetic control sputtering cathode, because the second magnet of centre does dynamic repeating motion, around magnet maintains static, and plasma body, to the etching sputter of target, dynamic shuttle-scanning occurs, and finally shows the even consumption of target on whole working face area.
In above-mentioned scanning magnetic field magnetic control sputtering cathode, preferred, this scanning magnetic field magnetic control sputtering cathode also comprises rotating mechanism, and described rotating mechanism is connected with described the second magnet in the inside of described target stand, drives the second magnet movement under powered attendant-controlled wheelchairs driving.
Above-mentioned rotating mechanism can be arranged on the position of longitudinal center's symmetry axis of target stand, drives the second magnet movement.
In above-mentioned scanning magnetic field magnetic control sputtering cathode, preferred, described the first magnet and the second magnet comprise permanent magnet or electromagnet, but are not limited to this; Preferred, described the first magnet and the second magnet are permanent magnet.
The first above-mentioned magnet and the magnetic pole of the second magnet are corresponding, are the routine settings of this area.
In above-mentioned scanning magnetic field magnetic control sputtering cathode, preferred, described target stand is open top structure, and described scanning magnetic field magnetic control sputtering cathode also comprises target, and described target is arranged on described target stand top, and its edge is connected with the sidewall of described target stand; The sidewall of described target and described target stand forms cooling water channel.
In above-mentioned scanning magnetic field magnetic control sputtering cathode, target stand and target are corresponding, for example target be shaped as planar rectangular, the shape of target stand is also rectangle so, overlooks the rectangle that is shaped as of target stand under state.
In above-mentioned scanning magnetic field magnetic control sputtering cathode, the water-cooling channel forming can directly carry out cooling by water to target, has increased the cooling power of target, can extend the time of target one action, reduce shut-down cooling, improved production efficiency, the stability of target and the quality of coating.
The present invention adopts dynamic change magnetic field and the direct Cooling Design of target, the magnetic field of motion change causes etch areas broadening, etch areas no longer to concentrate on a region, and occur in whole target material surface, greatly increase target utilization, and due to the even etching of target material surface, the electromagnetic field distributional pattern of target material surface remains stable, and processing quality is stable, so reduce that technological process hits beat the arc frequency.Meanwhile, target adopts direct Cooling Design, and target can work long hours, and not only enhances productivity but also coating quality is also guaranteed.
Outstanding effect of the present invention is:
Scanning magnetic field magnetic control sputtering cathode of the present invention, the magnetic field of employing motion change, can expand etch areas, makes target by even etching, but not concentrates on a region, has improved the utilization ratio of target; That can reduce that technological process hits beats the arc frequency, improves film quality; Adopt target direct water-cooling, can improve cooling performance, reduce shut-down cooling, make film layer quality stable.
Brief description of the drawings
Fig. 1 a is traditional scanning magnetic field magnetic control sputtering cathode structural representation;
Fig. 1 b is traditional scanning magnetic field magnetic control sputtering cathode working effect schematic diagram;
Fig. 2 a is the scanning magnetic field magnetic control sputtering cathode structural representation of embodiment 1;
Fig. 2 b is the scanning magnetic field magnetic control sputtering cathode working effect figure of embodiment 1;
Fig. 2 c is the magnet distribution plan of the scanning magnetic field magnetic control sputtering cathode of embodiment 1;
Fig. 2 d is the second permanent magnet 13-B initial motion site plan of the scanning magnetic field magnetic control sputtering cathode of embodiment 1;
Fig. 2 e is the second permanent magnet 13-B of the scanning magnetic field magnetic control sputtering cathode of embodiment 1 1/4 period position figure that moves;
Fig. 2 f is the second permanent magnet 13-B of the scanning magnetic field magnetic control sputtering cathode of embodiment 1 1/2 period position figure that moves;
Fig. 3 a is the scanning magnetic field magnetic control sputtering cathode structural representation of embodiment 2;
Fig. 3 b is the scanning magnetic field magnetic control sputtering cathode working effect figure of embodiment 2;
Fig. 3 c is the magnet distribution plan of the scanning magnetic field magnetic control sputtering cathode of embodiment 2;
Fig. 4 a is the metallurgical microscopic of the coating that in embodiment, conventional cathode is produced;
Fig. 4 b is the metallurgical microscopic of the coating of the scanning magnetic field magnetic control sputtering cathode production of the embodiment of the present invention.
Embodiment
Below by specific embodiment, method of the present invention is described, so that technical solution of the present invention is easier to understand, grasp, but the present invention is not limited thereto.Experimental technique described in following embodiment, if no special instructions, is ordinary method; Described reagent and material, if no special instructions, all can obtain from commercial channels.
Embodiment 1
The present embodiment provides a kind of scanning magnetic field magnetic control sputtering cathode, use planar rectangular target, therefore, its corresponding target stand is also rectangle, as Fig. 2 a, shown in Fig. 2 c, this scanning magnetic field magnetic control sputtering cathode comprises target 11, target stand 12, the first permanent magnet 13-A, the second permanent magnet 13-B and rotating mechanism 17, described target 11 is planar rectangular, be set directly at the top of target stand 12, its edge is connected with the sidewall of described target stand 12, the sidewall of described target stand 12 and described target 11 form cooling water channel, described rotating mechanism 17 is arranged on the position of longitudinal center's symmetry axis of described target stand 12, be connected with described the second permanent magnet 13-B.Described the first permanent magnet 13-A is fixedly installed on the inner side-wall of described target stand 12 surroundings, the below of target stand 12 top planes, and described the second permanent magnet 13-B is movably arranged on the bosom of described target stand 12, the below of target stand 12 top planes, described the second permanent magnet 13-B long strip shape magnet that the magnet unit of at least two is combined to form of serving as reasons, described magnet unit is under the drive of rotating mechanism 17, doing with center separately, edge in the parallel plane of target stand 12 top planes the circumferential motion that radius is identical, as Fig. 2 d (the second permanent magnet 13-B initial motion position), Fig. 2 e (the second permanent magnet 13-B move 1/4 period position), shown in Fig. 2 f (the second permanent magnet 13-B move 1/2 period position), the center of circle set diad parallel with the second permanent magnet with of target stand of all circumferential motion overlaps, its magnetic line of force 14 correspondingly changes.
The result of use of above-mentioned scanning magnetic field magnetic control sputtering cathode as shown in Figure 2 b, move along target material surface rule under the driving in magnetic field, finally forms etch areas 16 at target material surface by the sputter action of target.
Embodiment 2
The present embodiment provides a kind of scanning magnetic field magnetic control sputtering cathode, use plane circular arc target, therefore, its corresponding target stand is also circular, as Fig. 3 a, shown in Fig. 3 c, this scanning magnetic field magnetic control sputtering cathode comprises circular arc target 21, target stand 12, the first permanent magnet 13-A, the second permanent magnet 13-B and rotating mechanism 17, described circular arc target 21 is planar rondure, be set directly at the top of target stand 12, its edge is connected with the sidewall of described target stand 12, the sidewall of described target stand 12 and described circular arc target 21 form cooling water channel, described rotating mechanism 17 is arranged on the position of longitudinal center's symmetry axis of described target stand 12, be connected with described the second permanent magnet 13-B.Described the first permanent magnet 13-A is fixedly installed on the inner side-wall of described target stand 12 surroundings, the below of target stand 12 top planes, and described the second permanent magnet 13-B is movably arranged on the bosom of described target stand 12, the below of target stand 12 top planes; Longitudinal center's symmetry axis of described the second permanent magnet relative target stand 12 under the drive of rotating mechanism 17 does around circumferential motion, and the axle center of its circumferential motion and self how much axle center do not overlap, and its magnetic line of force 14 correspondingly changes.
The result of use of above-mentioned scanning magnetic field magnetic control sputtering cathode as shown in Figure 3 b, move along target material surface rule under the driving in magnetic field, finally forms etch areas 26 at target material surface by the sputter action of target.
Embodiment 3
The present embodiment provides a kind of scanning magnetic field magnetic control sputtering cathode, use planar rectangular target, therefore, its corresponding target stand is also rectangle, as Fig. 2 a, shown in Fig. 2 c, this scanning magnetic field magnetic control sputtering cathode comprises target 11, target stand 12, the first permanent magnet 13-A, the second permanent magnet 13-B and rotating mechanism 17, described target 11 is planar rectangular, be set directly at the top of target stand 12, its edge is connected with the sidewall of described target stand 12, the sidewall of described target stand 12 and described target 11 form cooling water channel, described rotating mechanism 17 is arranged on the position of longitudinal center's symmetry axis of described target stand 12, be connected with described the second permanent magnet 13-B.Described the first permanent magnet 13-A is fixedly installed on the inner side-wall of described target stand 12 surroundings, the below of target stand 12 top planes, and described the second permanent magnet 13-B is movably arranged on the bosom of described target stand 12, the below of target stand 12 top planes; Described the second permanent magnet 13-B is a long strip shape permanent magnet, and under the drive of rotating mechanism 17, longitudinal center's symmetry axis of the relative target stand 12 of its symmetry centre does around circumferential motion, and its magnetic line of force 14 correspondingly changes.
The result of use of above-mentioned scanning magnetic field magnetic control sputtering cathode as shown in Figure 2 b, move along target material surface rule under the driving in magnetic field, finally forms etch areas 16 at target material surface by the sputter action of target.
When the scanning magnetic field magnetic control sputtering cathode of embodiment 1 and embodiment 2 is worked, the etching situation to target and traditional scanning magnetic field magnetic control sputtering cathode technology compare, and it the results are shown in Table 1.In table, target utilization uses the weight of front and back to calculate by weighing target; Current density is that the electric current that the power supply while working by target shows calculates divided by the whole working face profile area of target; Beating arc (between target anode and cathode, immediate current is excessive) number of times is to obtain with DC power supply counting statistics result.
Table 1
Therefore, the scanning magnetic field magnetic control sputtering cathode of the embodiment of the present invention can expand etch areas, improves the utilization ratio of target, and that can reduce that technological process hits beats the arc frequency, can improve cooling performance, can keep the non-stop run of scanning magnetic field magnetic control sputtering cathode simultaneously.
The product coating that the product coating that the scanning magnetic field magnetic control sputtering cathode of the embodiment of the present invention 1 or embodiment 2 gained is produced and conventional cathode are produced compares analysis, wherein, the product coating of surface quality test be SKD11 test piece taking the 55HRC through polished finish as base material, be coated with 500nm tin indium oxide (ITO) film coating thereon; Testing method is that 100X observes under metaloscope.The product coating of bonding force test is on the SKD11 of 55HRC test piece base material, to be coated with 1000nm metal Ni film coating; Testing method is for testing with scratching instrument.Its results are shown in Table 2 and Fig. 4 a, Fig. 4 b shown in.
Table 2
As seen from the above table, there is not pin hole and pit in the coating that scanning magnetic field magnetic control sputtering cathode of the present invention is produced, and can not have a negative impact as printing opacity, conduction, friction etc. to coating weather resistance, outward appearance and use properties.And coating binding force is stronger.
Therefore, scanning magnetic field magnetic control sputtering cathode of the present invention, the magnetic field of employing motion change, can expand etch areas, makes target by even etching, but not concentrates on a region, has improved the utilization ratio of target; That can reduce that technological process hits beats the arc frequency, improves film quality; Adopt target direct water-cooling, can improve cooling performance, reduce shut-down cooling, make film layer quality stable.
Claims (9)
1. a scanning magnetic field magnetic control sputtering cathode, it is characterized in that: this scanning magnetic field magnetic control sputtering cathode comprises target stand, the first magnet and the second magnet, described the first magnet is arranged on the inner side-wall of described target stand surrounding, the below of target stand top planes, and described the second magnet is movably arranged on the bosom of described target stand, the below of target stand top planes; Described the second magnet does regular motion around longitudinal center's symmetry axis of described target stand.
2. scanning magnetic field magnetic control sputtering cathode according to claim 1, it is characterized in that: described the second magnet is set to end points shape magnet or long strip shape magnet according to the shape of target stand, the profile of described end points shape magnet comprises circle, regular polygon or irregular polygon.
3. scanning magnetic field magnetic control sputtering cathode according to claim 2, is characterized in that: in the time that target stand is shaped as rectangle, described the second magnet is single long strip shape magnet, and longitudinal center's symmetry axis of the relative target stand of its symmetry centre does around circumferential motion.
4. scanning magnetic field magnetic control sputtering cathode according to claim 2, it is characterized in that: in the time that target stand is shaped as rectangle, described the second magnet long strip shape magnet that the single magnet unit of at least two is combined to form of serving as reasons, described magnet unit is doing with in the parallel plane of target stand top planes the circumferential motion that radius is identical, and the center of circle set diad parallel with the second magnet with of target stand of all circumferential motion overlaps.
5. scanning magnetic field magnetic control sputtering cathode according to claim 2, it is characterized in that: in the time that target stand is shaped as circle or regular polygon, described the second magnet is end points shape magnet, longitudinal center's symmetry axis of the relative target stand of described the second magnet does around circumferential motion, and how much axle center in the axle center of its circumferential motion and self do not overlap.
6. scanning magnetic field magnetic control sputtering cathode according to claim 1, it is characterized in that: this scanning magnetic field magnetic control sputtering cathode also comprises rotating mechanism, described rotating mechanism is connected with described the second magnet in the inside of described target stand, drives the second magnet movement under powered attendant-controlled wheelchairs driving.
7. according to the scanning magnetic field magnetic control sputtering cathode described in claim 1-6 any one, it is characterized in that: described the first magnet and the second magnet comprise permanent magnet or electromagnet.
8. scanning magnetic field magnetic control sputtering cathode according to claim 7, is characterized in that: preferred, described the first magnet and the second magnet are permanent magnet.
9. scanning magnetic field magnetic control sputtering cathode according to claim 1, it is characterized in that: described target stand is open top structure, described scanning magnetic field magnetic control sputtering cathode also comprises target, and described target is arranged on described target stand top, and its edge is connected with the sidewall of described target stand; The sidewall of described target and described target stand forms cooling water channel.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113584449A (en) * | 2021-07-30 | 2021-11-02 | 北京航空航天大学合肥创新研究院(北京航空航天大学合肥研究生院) | Circular plane magnetron sputtering cathode with high target material utilization rate |
| CN114032516A (en) * | 2021-07-07 | 2022-02-11 | 重庆康佳光电技术研究院有限公司 | Magnetic source module for magnetron sputtering equipment and magnetron sputtering equipment |
| TWI819294B (en) * | 2020-04-24 | 2023-10-21 | 大陸商北京北方華創微電子裝備有限公司 | Semiconductor processing equipment and magnetron mechanism |
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| CN87106947A (en) * | 1987-10-12 | 1988-05-18 | 浙江大学 | Planar magnet-controlled sputtering source with separated magnets |
| US5676810A (en) * | 1994-03-25 | 1997-10-14 | Balzers Aktiengesellschaft | Target mounting-demounting arrangement |
| CN102102185A (en) * | 2009-12-22 | 2011-06-22 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Magnetron sputtering source and magnetron sputtering device and method |
| CN204174268U (en) * | 2014-07-09 | 2015-02-25 | 星弧涂层新材料科技（苏州）股份有限公司 | A kind of scanning magnetic field magnetic control sputtering cathode |
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- 2014-07-09 CN CN201410323751.7A patent/CN104109840A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN87106947A (en) * | 1987-10-12 | 1988-05-18 | 浙江大学 | Planar magnet-controlled sputtering source with separated magnets |
| US5676810A (en) * | 1994-03-25 | 1997-10-14 | Balzers Aktiengesellschaft | Target mounting-demounting arrangement |
| CN102102185A (en) * | 2009-12-22 | 2011-06-22 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Magnetron sputtering source and magnetron sputtering device and method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI819294B (en) * | 2020-04-24 | 2023-10-21 | 大陸商北京北方華創微電子裝備有限公司 | Semiconductor processing equipment and magnetron mechanism |
| CN114032516A (en) * | 2021-07-07 | 2022-02-11 | 重庆康佳光电技术研究院有限公司 | Magnetic source module for magnetron sputtering equipment and magnetron sputtering equipment |
| CN114032516B (en) * | 2021-07-07 | 2023-12-22 | 重庆康佳光电科技有限公司 | Magnetic source module for magnetron sputtering equipment and magnetron sputtering equipment |
| CN113584449A (en) * | 2021-07-30 | 2021-11-02 | 北京航空航天大学合肥创新研究院(北京航空航天大学合肥研究生院) | Circular plane magnetron sputtering cathode with high target material utilization rate |
| CN113584449B (en) * | 2021-07-30 | 2023-07-28 | 北京航空航天大学合肥创新研究院(北京航空航天大学合肥研究生院) | Circular planar magnetron sputtering cathode with high target utilization rate |
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Application publication date: 20141022 |