CN113584449A - Circular plane magnetron sputtering cathode with high target material utilization rate - Google Patents
Circular plane magnetron sputtering cathode with high target material utilization rate Download PDFInfo
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- CN113584449A CN113584449A CN202110872823.3A CN202110872823A CN113584449A CN 113584449 A CN113584449 A CN 113584449A CN 202110872823 A CN202110872823 A CN 202110872823A CN 113584449 A CN113584449 A CN 113584449A
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- magnet
- target
- cathode
- yoke
- magnetron sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to a circular plane magnetron sputtering cathode with high target utilization rate, which comprises a target, a magnet yoke, a target holder and a movement mechanism; the target is arranged above the target holder, the magnet is arranged on the magnet yoke and positioned below the target holder, and the magnet and the cathode center shaft are eccentrically arranged, namely the center of the magnet does not coincide with the cathode center shaft; the moving mechanism is arranged below the magnet yoke, the magnet yoke is connected to the moving mechanism, the moving mechanism pulls the magnet yoke to drive the magnet to rotate around the cathode central axis in a spiral type periodic manner, and the rotating radius is gradually increased. The magnet and the magnet yoke realize spiral periodic motion through the motion mechanism, the magnetic field on the surface of the target material synchronously moves in a spiral periodic manner, the target material is uniformly etched, and the utilization rate is greatly improved.
Description
Technical Field
The invention relates to the technical field of vacuum coating, in particular to a circular plane magnetron sputtering cathode with high target utilization rate.
Background
Magnetron sputtering belongs to one of Physical Vapor Deposition (PVD) and is widely applied to the field of material coating. One of the key core technologies of magnetron sputtering is the design and manufacture of a magnetron sputtering cathode, and the basic principle is to increase the plasma density by utilizing the confinement of a magnetic field to charged particles so as to increase the sputtering rate. In the traditional circular plane magnetron sputtering cathode, a magnet (a permanent magnet or an electromagnet) is fixedly arranged below a target seat, magnetic lines of force of a magnetic field of a target surface are fixed, and a target material is unevenly etched. After the magnetron sputtering cathode works for a long time, the surface of the target material is etched into a deep annular runway, so that the utilization rate of the target material is not high.
Disclosure of Invention
The invention provides a circular plane magnetron sputtering cathode with high target utilization rate, which can solve the technical problems.
In order to achieve the purpose, the invention adopts the following technical scheme:
a magnetron sputtering cathode with a circular plane and high target utilization rate comprises a magnet, wherein the magnet is arranged on a magnet yoke and is positioned below a target holder, and the magnet and a cathode center shaft are eccentrically arranged, namely the center of the magnet is not overlapped with the cathode center shaft. The magnetic yoke is connected to a moving mechanism below, and the moving mechanism pulls the magnetic yoke to drive the magnet to spirally rotate around the central axis of the cathode, so that the rotating radius is gradually increased. When the rotation radius of the magnet reaches the maximum, the motion track of the magnet covers all the area below the target, then the rotation radius starts to be gradually reduced, and the magnet rotates spirally back to the original position. Then the spiral motion mode is repeated, and the periodic cycle is repeated.
Compared with the prior art, the invention has the following advantages:
the magnet and the magnet yoke realize spiral periodic motion by arranging the motion mechanism, the magnetic field on the surface of the target material synchronously carries out spiral periodic motion, the target material is uniformly etched, and the utilization rate is greatly improved.
Drawings
FIG. 1 is a schematic cross-sectional view of the present invention;
FIG. 2 is a schematic top view of the present invention;
FIG. 3-A is a schematic diagram of the clockwise rotation trajectory of the magnet about the central axis of the cathode (with increasing spiral radius);
FIG. 3-B is a schematic diagram of the clockwise rotation trajectory of the magnet about the central axis of the cathode (with the radius of the helix gradually decreasing);
FIG. 4 is a schematic view of the movement mechanism of the present embodiment;
the reference numbers in the figures mean:
1-target material, 2-magnet, 3-magnet yoke, 4-cathode middle shaft, 5-target seat, 6-motion mechanism and 7-spiral track.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention.
As shown in fig. 1 and fig. 2, the circular planar magnetron sputtering cathode with high target utilization rate according to the present embodiment includes a target 1, a magnet 2, a magnet yoke 3, a target holder 5, and a movement mechanism 6;
the target material 1 is arranged above the target seat 5, and the magnet 2 is arranged on the magnet yoke 3 and is positioned below the target seat 5; the magnet 2 and the cathode central axis 4 are eccentrically arranged, namely the center of the magnet does not coincide with the cathode central axis 4;
the moving mechanism 6 is arranged below the magnetic yoke 3, the magnetic yoke 3 is connected to the moving mechanism 6, and the moving mechanism 6 drives the magnetic yoke 3 and the magnet 2 to rotate spirally; the magnet 2 rotates clockwise according to the 7-spiral track shown in fig. 3-a until the radius is maximum, the motion track of the magnet covers all the area under the target, and then the magnet 2 rotates clockwise according to the 7-spiral track shown in fig. 3-B until the radius is minimum, namely, the magnet returns to the original position. The above movement process is repeated, and the clockwise rotation movement is carried out according to the 7-spiral track shown in the figure 3-A, and the periodic cycle is repeated.
As shown in fig. 4, the moving mechanism 6 of the present embodiment includes a rack and pinion moving mechanism a, a linear guide mechanism B, an outer shaft mechanism C (with motor drive), and an inner shaft mechanism D (with motor drive). The magnet yoke 3 is arranged on a rack of the gear rack movement mechanism A and is also arranged on a sliding table of the linear guide rail mechanism B. The gear of the gear rack movement mechanism A is connected with an inner shaft mechanism D, and the center distance (namely the rotation radius) of the center of the magnet 2 relative to the cathode central axis 4 is adjusted through a magnetic yoke 3 under the driving of a motor of the inner shaft mechanism D. The slide rail of the linear guide rail mechanism B is arranged on the outer shaft mechanism C, and the magnetic yoke 3 and the magnet 2 rotate spirally through the rotating speed difference of the two motors of the outer shaft mechanism C and the inner shaft mechanism D.
The magnet of the present embodiment is cylindrical, bar-shaped, square or irregular.
The magnet is a permanent magnet or an electromagnet; preferably a permanent magnet.
In summary, the magnetron sputtering cathode provided by the embodiment of the invention can enlarge the target etching area and improve the target utilization rate.
The above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.
Claims (4)
1. The utility model provides a circular plane magnetron sputtering cathode of high target utilization ratio, includes target (1), magnet (2), yoke (3) and target holder (5), its characterized in that: also comprises a movement mechanism (6);
the target (1) is arranged above the target holder (5), the magnet (2) is arranged on the magnet yoke (3) and is positioned below the target holder (5), and the magnet (2) and the cathode middle shaft (4) are eccentrically arranged, namely the center of the magnet does not coincide with the cathode middle shaft (4);
the moving mechanism (6) is arranged below the magnet yoke (3), the magnet yoke (3) is connected to the moving mechanism (6) below, the moving mechanism (6) pulls the magnet yoke (3) to drive the magnet (2) to rotate around the cathode central shaft (4) in a spiral type periodic manner, and the rotating radius is gradually increased.
2. The circular planar magnetron sputtering cathode with high target utilization rate according to claim 1, wherein:
the motion mechanism (6) comprises a gear rack motion mechanism (A), a linear guide rail mechanism (B), an outer shaft mechanism (C) and an inner shaft mechanism (D);
the magnet yoke (3) is arranged on a rack of the gear rack movement mechanism (A) and is also arranged on a sliding table of the linear guide rail mechanism (B) at the same time;
a gear of the gear rack movement mechanism (A) is connected with an inner shaft mechanism (D), and the center distance of the center of the magnet (2) relative to the cathode center shaft (4) is adjusted through a magnet yoke (3) under the driving of a motor of the inner shaft mechanism (D);
the slide rail of the linear guide rail mechanism (B) is arranged on the outer shaft mechanism (C), and the magnetic yoke (3) and the magnet (2) rotate spirally through the rotating speed difference of two motors of the outer shaft mechanism (C) and the inner shaft mechanism (D).
3. The circular planar magnetron sputtering cathode with high target utilization rate according to claim 1, wherein: the magnet is cylindrical, bar-shaped, square or irregular.
4. The circular planar magnetron sputtering cathode with high target utilization rate according to claim 2, wherein: the magnet is a permanent magnet or an electromagnet.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110872823.3A CN113584449B (en) | 2021-07-30 | 2021-07-30 | Circular planar magnetron sputtering cathode with high target utilization rate |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110872823.3A CN113584449B (en) | 2021-07-30 | 2021-07-30 | Circular planar magnetron sputtering cathode with high target utilization rate |
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| CN113584449A true CN113584449A (en) | 2021-11-02 |
| CN113584449B CN113584449B (en) | 2023-07-28 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114381705A (en) * | 2021-12-27 | 2022-04-22 | 泰安东大新材表面技术有限公司 | Control device and control method for etching rate of magnetron sputtering cathode target |
| CN117364045A (en) * | 2023-12-05 | 2024-01-09 | 无锡尚积半导体科技有限公司 | Magnetic module in PVD equipment |
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|---|---|---|---|---|
| EP0503138A1 (en) * | 1991-03-08 | 1992-09-16 | Leybold Aktiengesellschaft | Device for actuating a magnet arrangement of a planar magnetron for a sputtering facility |
| JPH08134640A (en) * | 1994-11-12 | 1996-05-28 | Aneruba Kk | Magnetron cathode electrode of sputtering device |
| CN1743498A (en) * | 2005-09-12 | 2006-03-08 | 电子科技大学 | Rotary magnetic field planar target magnetic-controlled sputtering apparatus |
| US20070261957A1 (en) * | 2006-05-09 | 2007-11-15 | Nobuyuki Takahashi | Magnetron cathode and sputtering device installing it |
| CN102071403A (en) * | 2011-01-30 | 2011-05-25 | 东莞市汇成真空科技有限公司 | Planar magnetic control sputtering target with high utilization rate |
| CN103409725A (en) * | 2013-05-22 | 2013-11-27 | 东莞宏威数码机械有限公司 | Rotary alien target cathode mechanism and magnetron sputtering coating device |
| CN103668091A (en) * | 2012-09-19 | 2014-03-26 | 上海新产业光电技术有限公司 | Rotation plane magnetron sputtering target and motion for improving target material sputtering uniformity |
| CN103938171A (en) * | 2014-04-12 | 2014-07-23 | 合肥工业大学 | Device and method for improving sputtering cathode target utilization rate and coating uniformity |
| CN104109840A (en) * | 2014-07-09 | 2014-10-22 | 星弧涂层新材料科技（苏州）股份有限公司 | Magnetron sputtering cathode with magnetic field scanning function |
| CN108149209A (en) * | 2017-12-26 | 2018-06-12 | 中国科学院电工研究所 | A kind of composite magnetic control sputtering cathode |
-
2021
- 2021-07-30 CN CN202110872823.3A patent/CN113584449B/en active Active
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0503138A1 (en) * | 1991-03-08 | 1992-09-16 | Leybold Aktiengesellschaft | Device for actuating a magnet arrangement of a planar magnetron for a sputtering facility |
| JPH08134640A (en) * | 1994-11-12 | 1996-05-28 | Aneruba Kk | Magnetron cathode electrode of sputtering device |
| CN1743498A (en) * | 2005-09-12 | 2006-03-08 | 电子科技大学 | Rotary magnetic field planar target magnetic-controlled sputtering apparatus |
| US20070261957A1 (en) * | 2006-05-09 | 2007-11-15 | Nobuyuki Takahashi | Magnetron cathode and sputtering device installing it |
| JP2007302921A (en) * | 2006-05-09 | 2007-11-22 | Cyg Gijutsu Kenkyusho Kk | Magnetron cathode, and sputtering system installed with the same |
| CN102071403A (en) * | 2011-01-30 | 2011-05-25 | 东莞市汇成真空科技有限公司 | Planar magnetic control sputtering target with high utilization rate |
| CN103668091A (en) * | 2012-09-19 | 2014-03-26 | 上海新产业光电技术有限公司 | Rotation plane magnetron sputtering target and motion for improving target material sputtering uniformity |
| CN103409725A (en) * | 2013-05-22 | 2013-11-27 | 东莞宏威数码机械有限公司 | Rotary alien target cathode mechanism and magnetron sputtering coating device |
| CN103938171A (en) * | 2014-04-12 | 2014-07-23 | 合肥工业大学 | Device and method for improving sputtering cathode target utilization rate and coating uniformity |
| CN104109840A (en) * | 2014-07-09 | 2014-10-22 | 星弧涂层新材料科技（苏州）股份有限公司 | Magnetron sputtering cathode with magnetic field scanning function |
| CN108149209A (en) * | 2017-12-26 | 2018-06-12 | 中国科学院电工研究所 | A kind of composite magnetic control sputtering cathode |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114381705A (en) * | 2021-12-27 | 2022-04-22 | 泰安东大新材表面技术有限公司 | Control device and control method for etching rate of magnetron sputtering cathode target |
| CN117364045A (en) * | 2023-12-05 | 2024-01-09 | 无锡尚积半导体科技有限公司 | Magnetic module in PVD equipment |
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| Publication number | Publication date |
|---|---|
| CN113584449B (en) | 2023-07-28 |
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Application publication date: 20211102 Assignee: Hefei Zhizhen Precision Equipment Co.,Ltd. Assignor: HEFEI INNOVATION RESEARCH INSTITUTE, BEIHANG University Contract record no.: X2022980017635 Denomination of invention: A circular planar magnetron sputtering cathode with high target utilization License type: Exclusive License Record date: 20221011 |
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