CN218812044U

CN218812044U - Magnetron sputtering cathode with high target utilization rate

Info

Publication number: CN218812044U
Application number: CN202223092563.7U
Authority: CN
Inventors: 汪建; 李成; 陈卫
Original assignee: Hefei Innovation Research Institute of Beihang University
Current assignee: Hefei Innovation Research Institute of Beihang University
Priority date: 2022-11-17
Filing date: 2022-11-17
Publication date: 2023-04-07
Anticipated expiration: 2032-11-17

Abstract

The utility model provides a magnetron sputtering cathode with high target utilization rate, which comprises a target, a target seat, a magnet and a magnet yoke, wherein the target is arranged on the target seat, the magnet yoke is arranged below the target seat, and the magnet is arranged on the target seat positioned on one side of the target; the magnets comprise a middle magnet and an outer ring magnet arranged around the periphery of the middle magnet, and the outer ring magnet is respectively a first ring of magnets, a second ring of magnets and a third ring of magnets from inside to outside; the polarities of the middle magnet and the first ring of magnets are opposite, the polarity of the same ring of magnets in the outer ring of magnets is the same, and the polarities of the adjacent rings of magnets are opposite. The magnetron sputtering cathode increases the actual etching area of the target material in a four-layer magnet array mode, so that the utilization rate of the target material is improved.

Description

Magnetron sputtering cathode with high target utilization rate

Technical Field

The utility model relates to a vacuum coating technical field, concretely relates to magnetron sputtering negative pole of high target utilization ratio.

Background

Magnetron sputtering belongs to one of Physical Vapor Deposition (PVD) and is widely applied to the field of material coating. One of the key core technologies of magnetron sputtering is the design and manufacture of a magnetron sputtering cathode, and the basic principle is to increase the plasma density by utilizing the confinement of a magnetic field to charged particles so as to increase the sputtering rate. In the traditional circular plane magnetron sputtering cathode, a magnet is fixedly arranged on a target seat and comprises a middle magnet and a circle of outer ring magnet surrounding the middle magnet, the magnetic force line of a magnetic field of a target surface is fixed, and a target material is unevenly etched. When the magnetron sputtering cathode works for a long time, the surface of the target material is etched into a groove-shaped annular runway with deep middle and shallow two ends, and the target material can be punched through and cannot be used continuously after a long time, so that the utilization rate of the target material is not high and is generally only about 20%. At present, a motor-driven mode is adopted to move the magnet, so that the utilization rate of the target material is improved, but the overall structure is complex, and the industrialization is not facilitated. In addition, the magnetron sputtering cathode can generate a large amount of heat when working for a long time, and the heat accumulation can cause unstable sputtering work and even damage the cathode.

SUMMERY OF THE UTILITY MODEL

The utility model provides a magnetron sputtering cathode with high target utilization rate, which can solve the technical problem.

In order to achieve the above purpose, the utility model adopts the following technical scheme:

the magnetron sputtering cathode with high target utilization rate comprises a target, a target seat, a magnet and a magnet yoke, wherein the target is arranged on the target seat, the magnet yoke is arranged below the target seat, and the magnet is arranged on the target seat positioned on one side of the target; the magnets comprise a middle magnet and an outer ring magnet arranged around the periphery of the middle magnet, and the outer ring magnet is respectively a first ring of magnets, a second ring of magnets and a third ring of magnets from inside to outside; the polarities of the middle magnet and the first ring of magnets are opposite, the polarity of the same ring of magnets in the outer ring of magnets is the same, and the polarities of the adjacent rings of magnets are opposite.

In a further scheme, the middle magnet is a single magnetic body, and the first ring of magnets, the second ring of magnets and the third ring of magnets are formed by annularly arranging a plurality of magnetic bodies at equal intervals; the magnetic monomer is a cylindrical magnet.

In a further scheme, annular water channels are respectively formed in the target seats between the first ring of magnets and the second ring of magnets and between the second ring of magnets and the third ring of magnets.

Preferably, the target holder is provided with a water inlet and a water outlet which are communicated with the annular water channels, the water inlet and the water outlet are both connected with a water-cooling machine to form circulating water, and the two annular water channels are communicated through an external pipeline.

Further, magnet grooves are formed in the top of the target holder at intervals, and the magnets are embedded in the magnet grooves.

In the magnetron sputtering cathode with high target utilization rate, the magnets are formed by four circles of magnets arranged in an array manner, and after the magnetron sputtering cathode works for a long time, the number of etched annular runways on the surface of the target is increased from 1 circle to 3 circles, so that the actual sputtering area of the target is increased, and the target utilization rate is effectively improved.

Meanwhile, in order to avoid the over-high temperature of the target during sputtering, the inside of the target seat below the target is provided with two water channels for cooling the target during sputtering.

Therefore, the target material is uniformly etched under the condition that complex mechanisms such as a motor are not added, and the utilization rate of the target material is improved.

Drawings

FIG. 1 is a schematic cross-sectional view of the present invention;

fig. 2 is a schematic top view of the present invention;

FIG. 3 is a schematic view of the water inlet and outlet of the middle annular water passage;

fig. 4 is a schematic view of the magnetic field simulation of the present invention;

fig. 5 is a schematic diagram of thermal simulation of the present invention;

the reference numbers in the figures mean:

1-target material, 2-target holder, 31-middle magnet, 32-first ring of magnet, 33-second ring of magnet, 34-third ring of magnet, 4-magnet yoke, 5-annular water channel, 51-water inlet, 52-water outlet and 53-external pipeline.

Detailed Description

In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention.

As shown in fig. 1 and fig. 2, the magnetron sputtering cathode with high target utilization ratio according to the present embodiment includes a target 1, a target holder 2, a magnet and a magnet yoke 4, wherein the target 1 is installed on one side surface of the target holder 2, the magnet yoke 4 is installed on the other side surface of the target holder 2, and the magnet is installed on the target holder 2 located on one side of the target 1; the magnets comprise a middle magnet 31 positioned in the central area of the target 1 and an outer ring magnet arranged around the periphery of the middle magnet 31, the outer ring magnet is uniformly provided with three rings, namely a first ring of magnets 32, a second ring of magnets 33 and a third ring of magnets 34 from inside to outside; the polarity of the middle magnet 31 is opposite to that of the first ring of magnets 32, the polarity of the same ring of magnets in the outer ring of magnets is the same, and the polarity of the adjacent ring of magnets is opposite. As shown in fig. 1, the polarities of the adjacent coils are opposite between the middle magnet 31, the first coil magnet 32, the second coil magnet 33 and the third coil magnet 34, and for example, with respect to the magnetic pole direction toward the target 1, the middle magnet 31 is N-polar, the first coil magnet 32 is S-polar, the second coil magnet 33 is N-polar and the third coil magnet 34 is S-polar. Because the parallel magnetic field appears in the interval area of the adjacent circles of magnet arrays, the parallel magnetic field area represents an annular runway with an etched surface when the target material is sputtered, three circles of outer circles of magnets are arranged, the actual sputtering area of the target material, namely the area of the annular runway area, is increased, the possibility of breakdown is reduced, and therefore the utilization rate of the target material is improved.

The magnetic field simulation result is shown in fig. 4, and a parallel magnetic field appears in the interval area of adjacent magnet arrays, and the parallel magnetic field area represents an etched annular runway on the surface of the target during sputtering operation. The magnet array interval area has 3 circles of parallel magnetic fields, which shows that the surface of the target 1 is etched into 3 circles of annular runways finally. The actual sputtering area of the target, i.e. the area of the annular track area, is increased, so that the utilization rate of the target 1 is improved.

Furthermore, the middle magnet 31 is a single magnetic body, and the first ring of magnets 32, the second ring of magnets 33 and the third ring of magnets 34 are all formed by annularly arranging a plurality of magnetic bodies at equal intervals; the magnetic monomer is a cylindrical magnet.

In the embodiment, annular water channels 5 are respectively opened in the target holder 2 between the first ring of magnets 32 and the second ring of magnets 33, and between the second ring of magnets 33 and the third ring of magnets 34. A water inlet 51 and a water outlet 52 which are communicated with the annular water channel 5 are formed in the target holder 2, and the water inlet 51 and the water outlet 52 are both connected with a water-cooling machine to form circulating water; the two annular water channels 5 are communicated through an external pipeline 53 (shown in figure 3), so that the preparation of joints and the like is reduced, and the sealing performance is ensured. The annular water channel is used for cooling the target 1 during sputtering.

This application is owing to set up two water courses to can show and improve the cooling effect. The thermal simulation result is shown in fig. 5, and the maximum temperature is only 28.6 ℃, so that the temperature of the target 1 is effectively controlled within a safe temperature range, and the use requirement of the cathode is met.

Further, magnet slots are formed in the top of the target holder 2 at intervals, and the magnets are embedded in the magnet slots.

When the device works, the device also comprises a power supply and a vacuum cavity (not shown in the figure). Under the excitation of a power supply, the device ionizes process gas atoms or molecules (such as argon atoms) in a vacuum cavity to generate plasma. Electrons in the plasma move around under the action of the electric field and the magnetic field, and more ions are generated by collision. The ions bombard out the atoms on the surface of the target material so as to deposit the atoms on the surface of the workpiece to form a film. The magnetron sputtering cathode provided by the embodiment of the application can enlarge the target etching area and improve the utilization rate of the target.

The above embodiments are only used to illustrate the technical solution of the present invention, and not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it should be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications and substitutions do not depart from the spirit and scope of the present invention in its corresponding aspects.

Claims

1. The magnetron sputtering cathode with high target utilization rate comprises a target (1), a target seat (2), a magnet and a magnet yoke (4), wherein the target (1) is arranged on the target seat (2), the magnet yoke (4) is arranged below the target seat (2), and the magnet is arranged on the target seat (2) positioned on one side of the target (1); the method is characterized in that: the magnets comprise a middle magnet (31) and outer ring magnets arranged around the periphery of the middle magnet (31), wherein the outer ring magnets are a first ring of magnets (32), a second ring of magnets (33) and a third ring of magnets (34) from inside to outside respectively; the polarity of the middle magnet (31) is opposite to that of the first ring of magnets (32), the polarity of the same ring of magnets in the outer ring of magnets is the same, and the polarity of the adjacent ring of magnets is opposite.

2. The high target utilization magnetron sputtering cathode of claim 1, wherein: the middle magnet (31) is a single magnetic body, and the first ring of magnets (32), the second ring of magnets (33) and the third ring of magnets (34) are formed by annularly arranging a plurality of magnetic bodies at equal intervals; the magnetic monomer is a cylindrical magnet.

3. The magnetron sputtering cathode with high target utilization according to claim 1, wherein: and annular water channels (5) are respectively formed in the target holder (2) positioned between the first ring of magnets (32) and the second ring of magnets (33) and between the second ring of magnets (33) and the third ring of magnets (34).

4. The magnetron sputtering cathode with high target utilization according to claim 3, wherein: a water inlet (51) and a water outlet (52) which are communicated with the annular water channel (5) are formed in the target holder (2), and the water inlet (51) and the water outlet (52) are both connected with a water-cooling machine to form circulating water; the two annular water channels (5) are communicated through an external pipeline (53).

5. The high target utilization magnetron sputtering cathode of claim 1, wherein: magnet grooves are formed in the top of the target holder (2) at intervals, and the magnets are embedded in the magnet grooves.