CN101285171A - Rotary cylindrical magnetron sputtering target - Google Patents
Rotary cylindrical magnetron sputtering target Download PDFInfo
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- CN101285171A CN101285171A CNA2007100222331A CN200710022233A CN101285171A CN 101285171 A CN101285171 A CN 101285171A CN A2007100222331 A CNA2007100222331 A CN A2007100222331A CN 200710022233 A CN200710022233 A CN 200710022233A CN 101285171 A CN101285171 A CN 101285171A
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Abstract
The invention provides a rotary cylindrical magnetic control sputtering target, which comprises a pole terminal, permanent magnets, hollow cylindrical target material and a mandrel, wherein, the permanent magnets are embedded into the pole terminal along the axial direction of the cylindrical target material; the permanent magnets are long permanent magnetic strips and short permanent magnetic strips; positioning slots which are used for arrangement of the long permanent magnetic strips and the short permanent magnetic strips are arranged on the pole terminal; the long permanent magnetic strips and the short permanent magnetic strips are respectively arranged in corresponding positioning slots; a multipath bar magnet is formed by alternate distribution of the long permanent magnetic strips and the short permanent magnetic strips along the circumferential direction of the pole terminal; the polarity of the long permanent magnetic strips and that of the short permanent magnetic strips are different; the polarization direction is perpendicular to a central axis of a sputtering cathode; and closed racetrack shaped magnetic force lines are formed by magnetic rings on both ends of the pole terminal and the long permanent magnetic strips and the short permanent magnetic strips. The rotary cylindrical magnetic control sputtering target realizes low air pressure, high density and uniformity of discharge plasma, guarantees formation of a closed electronic racetrack under the condition of glow discharge, makes sputtering perform stably, has good surface quality of membranous layers and compact membranous layers, and is uniform in the consumption of the target materials and high in the utilization rate of the target materials.
Description
Technical field
The present invention relates to the large-area coating film rotary cylindrical magnetron sputtering target, be widely used in preparing in the equipment of coating, belong to the film preparing technology field.
Background technology
Present magnetron sputtering equipment both domestic and external, the structural shape of its sputtering source target mainly contains two kinds of coaxial magnetron sputtering target and plane magnetic controlled sputtering targets, coaxial magnetron sputtering target is to be provided with annular permanent-magnet body and pole shoe (magnetic conduction pad) formation in the cast sputter material, form the gapped ring-type glow discharge zone of several and target axis normal during sputter, when being coated with large area substrates (as cladding glass), form the alternate striped of thickness inevitably, cause serious membrane thickness unevenness, influence quality product.Plane magnetic controlled sputtering target adopts the bar-shaped magnet structure, forms the strip aura district parallel with the target axis during sputter, has alleviated preferably by the membrane thickness unevenness phenomenon on the plating matrix, makes coating even, has guaranteed quality product.But, make target utilization extremely low because the target surface etching region concentrates on the rectangle frame.
Magnetron sputtering target is one of main device in the large-area vacuum filming equipment, needs insulating compound films such as a large amount of deposition oxides, nitride in the modern optical conductive film product, so widespread use intermediate frequency reaction magnetocontrol sputtering technology.What use in the vacuum coating film equipment now mainly is plane magnetic controlled sputtering target, and its permanent magnet and target all are actionless, and the etched area of target is a fixed like this, therefore, during using planar magnetron sputtering target deposition of insulative material film, the utilization ratio of target is very low, can only reach 40% at most usually.Along with the etching of target is more and more darker, the sputter rate of target and the homogeneity of film are all influential, are unfavorable for the deposition of high quality function film; And because the existence of the non-etched area of target, insulating material can be deposited on non-etched area surface in coating process, cause a large amount of electronics in last accumulation, cause the target surface starting the arc, light then cause the pollution of deposit film, heavy then cause the unstable of sputter procedure even stop.
In Chinese patent ZL89215781.X and ZL95219498.8, disclose a kind of column-shape magnetron sputtering target, had some vertical bar shaped permanent magnets to be parallel to target in its target and be axially placed on the matrix, during work, target rotation and permanent magnet does not change, otherwise or.Usually strip permanent magnet is made up of the little strip permanent magnet of multistage, embed successively and form whole strip permanent magnet in the pole shoe, strip permanent magnet must occur in pairs, wherein the N utmost point of each permanent magnet is opposite with S utmost point placement direction, be that certain vertical bar shaped permanent magnet N is extremely outside, S is extremely inside, then its adjacent vertical bar shaped permanent magnet must be that S is extremely outside, N is extremely inside, strip permanent magnet one end has annular permanent magnet simultaneously, be that strip permanent magnet one end links to each other with annular permanent magnet, the other end is unsettled, strip permanent magnet is the initial point symmetric form with the annular permanent magnet mode of linking to each other, and could form closed flux loop.The glow discharge zone that produces between strip permanent magnet and the annular permanent magnet is very wide, illustrate that target is strong in this regional sputter ability, so the etching speed at target two ends is faster than the target stage casing, transverse concave groove can appear in the two ends at target, the target two ends do not participate in the sputter part, thereby cause scrapping too early of target, reduced the utilization ratio of target, caused waste.
U.S. Pat 2005/0189218A1 discloses a kind of rotational circle column type target structure, uses the cathode arc power supply to deposit, because the magnetic field structure restriction, this rotational circle column type target structure is difficult to adopt the densification of magnetron sputtering technique depositional texture, ganoid coating.Sputtering technology can satisfy the needs of preparation different performance coating, the basis of sputter procedure is working gas (being generally argon gas) glow discharge, between the anode of cathode targets that applies high negative voltage and ground connection, there is an electric field, near the negative electrode unbound electron under electric field action towards anode accelerated motion, under certain argon gas density, the neutral argon gas atmo of ionization becomes the argon gas ion of positively charged, discharge secondary electron simultaneously, the argon gas ion of positively charged is under electric field action, towards the negative electrode accelerated motion that applies high negative voltage, when the argon gas ion energy is higher than the cathode targets atomic binding energy, target atom is bombarded, move on the workpiece to be plated that is placed on target opposite or circumference and form film, this calls sputter coating.Because the running orbit of electronics is shorter, the ionization level of argon gas is very low, causes sputter rate lower.
Therefore, designing a kind of novel rotary cylindrical magnetron sputtering target, will be an important technology problem that is worth research.
Summary of the invention
The objective of the invention is to overcome the deficiencies in the prior art, a kind of novel rotary cylindrical magnetron sputtering target is provided, form the electronics runway of a closure in the time of can guaranteeing glow discharge, sputter is stablized carry out, improve the utilization ratio of target, improve the quality of deposit film.
Purpose of the present invention is achieved through the following technical solutions:
Rotary cylindrical magnetron sputtering target, comprise pole shoe, permanent magnet, hollow circuit cylinder target and mandrel, permanent magnet axially is embedded in the pole shoe along the cylinder target, it is characterized in that: described permanent magnet is long permanent magnetic strip and short permanent magnetic strip, correspondingly, pole shoe is provided with the locating slot that is used to install long permanent magnetic strip and short permanent magnetic strip, and long permanent magnetic strip and short permanent magnetic strip are installed in respectively in the corresponding locating slot; Long permanent magnetic strip and short permanent magnetic strip are alternately distributed along the pole shoe circumferential direction, thereby channeling bar-shaped magnet, the polarity of length permanent magnetic strip is opposite, and direction of polarization is perpendicular to the sputter cathode central axis, and the magnet ring at pole shoe two ends and length permanent magnetic strip constitute closed runway shape magnetic line of force.
Purpose of the present invention can also come further to realize by the following technical programs:
Aforesaid rotary cylindrical magnetron sputtering target, wherein, long permanent magnetic strip and short permanent magnetic strip are fixed in the locating slot of pole shoe by long press strip and short press strip respectively.
Aforesaid rotary cylindrical magnetron sputtering target, wherein, long permanent magnetic strip and short permanent magnetic strip are alternately distributed with even number along the pole shoe circumferential direction.
The outstanding substantive distinguishing features and the obvious improvement of technical solution of the present invention is mainly reflected in:
The present invention introduces the axial magnetic field of parallel target on the Style Columu Talget surface, realize subatmosphericization, densification and the homogenizing of discharge plasma.Sputtering zone and target axially parallel form continuous closed magnetic circuit at target surface on the structure in the working process, form the electronics runway of a closure when having guaranteed glow discharge, make sputter stablize and carry out.Adopt the coating of rotary cylindrical magnetron sputtering technology preparation, film surface quality height, rete densification.Cylindric target at the uniform velocity rotates during work, and the target surface etch is even, so the consumption of target is even, long service life, and target utilization surpasses 70%, economic benefit and obvious social benefit, application prospect is good.
Description of drawings
Below in conjunction with accompanying drawing technical solution of the present invention is described further:
Fig. 1: the structural representation of central rods target;
Fig. 2: the schematic cross-section of central rods target;
Fig. 3: central rods target magnetic field structure synoptic diagram;
Fig. 4 a: a central rods target sectional view vertically;
Fig. 4 b: central rods target another sectional view vertically.
The implication of each Reference numeral sees the following form among the figure:
| Reference numeral | Implication | Reference numeral | Implication | | Implication | |
| 1 | The |
2 | |
3 | Long permanent |
|
| 4 | |
5 | Short permanent |
6 | |
|
| 7 | |
8 | |
9 | Magnet ring |
Embodiment
Magnetron sputtering plating (power line is perpendicular to target surface) except an electric field that applies on target also applies a magnetic field makes electronics be subjected to the influence of Lorentz force, make cycloid and spiral helicine compound motion, prolong the electronics running orbit, plasma density is improved greatly, the quantity of positive ion also increases greatly, can improve sputter rate.
Shown in Fig. 1～4, rotary magnetic control sputter central rods target comprises pole shoe 2, permanent magnet 3 and 5, press strip 4 and 6, hollow circuit cylinder target 7 and rotation mandrel 1, permanent magnet 3 is long permanent magnetic strip, permanent magnet 5 is short permanent magnetic strip, correspondingly, pole shoe 2 is provided with the locating slot that is used to install long permanent magnetic strip 3 and short permanent magnetic strip 5, and long permanent magnetic strip 3 is fixed in the locating slot of pole shoe 2 by long press strip 4, and short permanent magnetic strip 5 is fixed in the locating slot of pole shoe 2 by short press strip 6; Long permanent magnetic strip 3 and short permanent magnetic strip 5 are alternately distributed with even number along the pole shoe circumferential direction, thereby channeling bar-shaped magnet, the polarity of length permanent magnetic strip is opposite, direction of polarization is perpendicular to the sputter cathode central axis, and the magnet ring at pole shoe two ends and length permanent magnetic strip constitute closed runway shape magnetic line of force.
Cross section such as Fig. 2 of rotary magnetic control sputter central rods target structure, rotating mechanism drives target and rotates around permanent magnet, be useful on the locating slot that long permanent magnetic strip 3 and short permanent magnetic strip 5 are installed on the pole shoe 2, permanent magnet is installed in the locating slot of pole shoe and by length press strip 4 and 6 fixing, strip permanent magnet is equally distributed along the pole shoe circumference, this just can guarantee that the Distribution of Magnetic Field on the whole circumference is even, and sputter is even on 360 ° of directions.The length magnetic stripe is alternately arranged as Fig. 4 a, 4b, the channeling bar magnet, the polarity of length magnetic stripe is opposite, and direction of polarization is perpendicular to the sputter cathode central axis, the magnet ring 9 that magneticsubstance is made is installed in the two ends of pole shoe, constitutes one group of closed runway shape magnetic line of force with the length magnetic stripe.In sputter procedure, magnetic circuit system and cooling water system remain static all the time, and target is around the central axis uniform rotation of sputter cathode, and target surface evenly passes the plasma body zone.Permanent magnet is fixed in the sputter procedure, and target rotates all the time, so the etching of target is even and etched area is fixed never, can increase substantially the utilization ratio of target like this; Because whole target surface all is etched, avoid the phenomenon of the target surface starting the arc equally, guarantee the stability of sputter procedure and the quality of deposit film.Rotary magnetic control sputtering target also comprises rolling bearing 8, the stability when rotating to strengthen target.Target is except being hollow cylindrical, and its cross section can also be shapes such as fan-shaped, arc, regular polygon.
During use, target is installed on the coating equipment and can uses, connect water coolant, connect the magnetically controlled DC sputtering power cathode, back of the body end vacuum tightness is less than 5 * 10
-5During the Torr scope, injecting gas (as argon gas etc.), make the discharge of target build-up of luminance, it is stable to keep aura, and the adjusting process parameter can obtain evenly firm rete.Owing to adopt the length permanent magnetic strip on the structure, formed a closed runway shape magnetic line of force when guaranteeing glow discharge, sputter is stablized carry out, avoided arcing (discharge) problem of end, target is stably worked under high current density.Pole shoe structure assurance of the present invention in addition magnetic field does not have gap and uniform distribution continuously, and sputter is evenly carried out.The employing permanent magnet is fixed, and the mode of target rotation greatly improves target utilization, surpasses more than 70%; Film deposition rate height, good uniformity, superior performance.
In sum, sputter rate is even vertically for the whole target of the present invention, and etching speed is close, compares with the conventional sputter target less than 40% target utilization, and target utilization of the present invention improves nearly 1 times.Continual, the uniform bar shaped glow discharge zone that forms makes the thickness of coating that deposits to by on the plating base material even, is at the uniform velocity to rotate during owing to work, the target surface etching is even, so the consumption of target is even, long service life, compare with the target of other structure, the life-span improves greatly.Plated film efficient is also high, and the sputtering sedimentation speed of target is fast, can be coated with superhard, anticorrosion, decorating film on metallic substance and non-metallic material material products, film forming strong adhesion; Be applicable to the commercial scale production of films such as big area oxide compound, nitride.
Below only be concrete exemplary applications of the present invention, protection scope of the present invention is not constituted any limitation.All employing equivalents or equivalence are replaced and the technical scheme of formation, all drop within the rights protection scope of the present invention.
Claims (3)
1. rotary cylindrical magnetron sputtering target, comprise pole shoe, permanent magnet, hollow circuit cylinder target and mandrel, permanent magnet axially is embedded in the pole shoe along the cylinder target, it is characterized in that: described permanent magnet is long permanent magnetic strip and short permanent magnetic strip, correspondingly, pole shoe is provided with the locating slot that is used to install long permanent magnetic strip and short permanent magnetic strip, and long permanent magnetic strip and short permanent magnetic strip are installed in respectively in the corresponding locating slot; Long permanent magnetic strip and short permanent magnetic strip are alternately distributed along the pole shoe circumferential direction, thereby channeling bar-shaped magnet, the polarity of length permanent magnetic strip is opposite, and direction of polarization is perpendicular to the sputter cathode central axis, and the magnet ring at pole shoe two ends and length permanent magnetic strip constitute closed runway shape magnetic line of force.
2. rotary cylindrical magnetron sputtering target according to claim 1 is characterized in that: described long permanent magnetic strip and short permanent magnetic strip are fixed in the locating slot of pole shoe by long press strip and short press strip respectively.
3. rotary cylindrical magnetron sputtering target according to claim 1 and 2 is characterized in that: described long permanent magnetic strip and short permanent magnetic strip are alternately distributed with even number along the pole shoe circumferential direction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100222331A CN101285171A (en) | 2007-05-10 | 2007-05-10 | Rotary cylindrical magnetron sputtering target |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100222331A CN101285171A (en) | 2007-05-10 | 2007-05-10 | Rotary cylindrical magnetron sputtering target |
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| Publication Number | Publication Date |
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| CN101285171A true CN101285171A (en) | 2008-10-15 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2007100222331A Pending CN101285171A (en) | 2007-05-10 | 2007-05-10 | Rotary cylindrical magnetron sputtering target |
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| CN (1) | CN101285171A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101812667A (en) * | 2010-04-19 | 2010-08-25 | 中国南玻集团股份有限公司 | Magnetron sputtering plating film cathode device |
| CN101899642A (en) * | 2009-05-25 | 2010-12-01 | 鸿富锦精密工业（深圳）有限公司 | Film-coating device |
| CN102703872A (en) * | 2012-05-24 | 2012-10-03 | 广东友通工业有限公司 | Magnetron sputtering target of magnetron sputtering film plating machine |
| CN102719799A (en) * | 2012-06-08 | 2012-10-10 | 深圳市华星光电技术有限公司 | Rotary magnetron sputtering target and corresponding magnetron sputtering device |
| CN103114272A (en) * | 2011-11-17 | 2013-05-22 | 鸿富锦精密工业（深圳）有限公司 | Cylindrical magnetron sputtering cathode |
| CN101994093B (en) * | 2009-08-14 | 2013-08-21 | 鸿富锦精密工业（深圳）有限公司 | Magnetron sputtering device |
| CN103938173A (en) * | 2014-04-30 | 2014-07-23 | 浙江东晶电子股份有限公司 | Co-sputtering rotary target and preparation method thereof |
| CN107995932A (en) * | 2016-12-26 | 2018-05-04 | 深圳市柔宇科技有限公司 | Magnetic control sputtering cathode system |
| CN109735812A (en) * | 2018-09-06 | 2019-05-10 | 中国科学院金属研究所 | A kind of big L/D ratio tube intracavity magnetron sputtering apparatus and the method for preparing α-Ta coating |
-
2007
- 2007-05-10 CN CNA2007100222331A patent/CN101285171A/en active Pending
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101899642A (en) * | 2009-05-25 | 2010-12-01 | 鸿富锦精密工业（深圳）有限公司 | Film-coating device |
| CN101899642B (en) * | 2009-05-25 | 2013-03-20 | 鸿富锦精密工业（深圳）有限公司 | Film-coating device |
| US8673123B2 (en) | 2009-05-25 | 2014-03-18 | Hon Hai Precision Industry Co., Ltd. | Magnetron sputtering device having rotatable substrate holder |
| CN101994093B (en) * | 2009-08-14 | 2013-08-21 | 鸿富锦精密工业（深圳）有限公司 | Magnetron sputtering device |
| CN101812667A (en) * | 2010-04-19 | 2010-08-25 | 中国南玻集团股份有限公司 | Magnetron sputtering plating film cathode device |
| CN103114272B (en) * | 2011-11-17 | 2017-03-29 | 王良源 | Cylindrical magnetron sputtering negative electrode |
| CN103114272A (en) * | 2011-11-17 | 2013-05-22 | 鸿富锦精密工业（深圳）有限公司 | Cylindrical magnetron sputtering cathode |
| CN102703872A (en) * | 2012-05-24 | 2012-10-03 | 广东友通工业有限公司 | Magnetron sputtering target of magnetron sputtering film plating machine |
| CN102703872B (en) * | 2012-05-24 | 2014-01-29 | 广东友通工业有限公司 | Magnetron sputtering target of magnetron sputtering film plating machine |
| CN102719799A (en) * | 2012-06-08 | 2012-10-10 | 深圳市华星光电技术有限公司 | Rotary magnetron sputtering target and corresponding magnetron sputtering device |
| CN103938173A (en) * | 2014-04-30 | 2014-07-23 | 浙江东晶电子股份有限公司 | Co-sputtering rotary target and preparation method thereof |
| CN107995932A (en) * | 2016-12-26 | 2018-05-04 | 深圳市柔宇科技有限公司 | Magnetic control sputtering cathode system |
| WO2018119600A1 (en) * | 2016-12-26 | 2018-07-05 | 深圳市柔宇科技有限公司 | Magnetron sputtering cathode system |
| CN107995932B (en) * | 2016-12-26 | 2020-07-28 | 深圳市柔宇科技有限公司 | Magnetron sputtering cathode system |
| CN109735812A (en) * | 2018-09-06 | 2019-05-10 | 中国科学院金属研究所 | A kind of big L/D ratio tube intracavity magnetron sputtering apparatus and the method for preparing α-Ta coating |
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Open date: 20081015 |