CN209836293U - High-efficiency magnetron sputtering planar cathode - Google Patents
High-efficiency magnetron sputtering planar cathode Download PDFInfo
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- CN209836293U CN209836293U CN201920524017.5U CN201920524017U CN209836293U CN 209836293 U CN209836293 U CN 209836293U CN 201920524017 U CN201920524017 U CN 201920524017U CN 209836293 U CN209836293 U CN 209836293U
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Abstract
The utility model discloses a high efficiency magnetron sputtering plane negative pole, including target and magnetic field generating device, magnetic field generating device includes yoke and the double magnetic circuit magnet device of setting between target and yoke, and double magnetic circuit magnet device includes two sets of main magnet devices and two sets of auxiliary magnet devices, and the main magnet device includes tip magnet and main magnet, and two sets of main magnet adjacent settings are in yoke upper surface middle part position, and the magnetization polar axis direction of main magnet all with the target level. The utility model discloses a set up adjacent main magnet, but widen the sputtering region of target top, make target top magnetic field intensity distribute more evenly to improve the utilization ratio of target, strengthened the plasma density of target top, can improve sputtering rate, thereby improve film deposition rate, reduce the coating film cost.
Description
Technical Field
The utility model relates to a magnetron sputtering technical field, more specifically say, in particular to high efficiency magnetron sputtering plane negative pole.
Background
Physical vapor deposition is a technique that utilizes physical means to deposit a thin film on a substrate. The magnetron sputtering coating technology is one of physical vapor deposition technologies, in the magnetron sputtering coating technology, a magnetic field is formed on the surface of a target material through a magnet, plasma is restrained near the surface of the target material through drift motion of electrons, high-density plasma is formed, high-energy ions bombard the surface of the target material, ions or atoms on the surface of the target material are splashed out of the surface of the target material after exchanging energy with the incident high-energy ions, and a film is deposited on a base material.
At present, in the field of application of magnetron sputtering coating technology, a planar magnetron sputtering cathode is widely used. The existing planar magnetron sputtering cathode generally comprises a target material, a magnet device and a magnet yoke, wherein the magnet device comprises three groups of magnets, the three groups of magnets are arranged between the target material and the magnet yoke at intervals, a magnetization polar axis is vertical to the plane of the target material, the magnets on two sides are connected by end magnetic conduction blocks to form a closed magnetic loop, in the sputtering process, the higher the horizontal component of the magnetic field intensity on the surface of the target material is, the higher the sputtering rate is, the larger the consumption is, and therefore, after the target material is sputtered for a period of time, an etching pit can appear on the surface. In the conventional common magnetron sputtering planar cathode, the magnetic field distribution on the surface of the target and the target etching pits are shown in figure 1 and are limited by the working principle, the plasma density on the surface of the target is low, the film deposition speed is slow, the etching pits are V-shaped, the utilization rate of the target is very low and is about 15-25%, and thus a great deal of material is wasted; meanwhile, the low utilization rate of the target material can cause the equipment to need frequent target material replacement, and the production efficiency is greatly influenced. Therefore, a high-efficiency magnetron sputtering planar cathode is provided.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a high efficiency magnetron sputtering plane negative pole.
In order to achieve the above purpose, the utility model adopts the following technical scheme: a high-efficiency magnetron sputtering planar cathode comprises a target material and a magnetic field generating device, wherein the magnetic field generating device comprises a magnetic yoke and a double-magnetic-circuit magnet device arranged between the target material and the magnetic yoke, the target material and the magnetic yoke are horizontally arranged, the double-magnetic-circuit magnet device comprises two groups of main magnet devices and two groups of auxiliary magnet devices, the two groups of main magnet devices are symmetrically distributed on the magnetic yoke, the main magnet devices comprise end magnets and main magnets, the two groups of end magnets are respectively arranged at two end positions of the upper surface of the magnetic yoke, the two groups of main magnets are adjacently arranged at the middle position of the upper surface of the magnetic yoke, the magnetization polar axis directions of the main magnets are horizontal to the target material, the magnetic poles at the inner sides of the two groups of main magnets are the same, the magnetization polar axis directions of the two groups of end magnets are, the auxiliary magnet device comprises two groups of auxiliary magnets, the two groups of auxiliary magnets are respectively arranged between the main magnet on the upper surface of the magnetic yoke and the end magnet, each auxiliary magnet comprises a first auxiliary magnet and a second auxiliary magnet, the magnetization polar axis directions of the end magnet, the first auxiliary magnet and the second auxiliary magnet are perpendicular to the target material, and the magnetic pole directions of the end magnet, the first auxiliary magnet and the second auxiliary magnet at adjacent positions are opposite.
Preferably, the magnet yoke upper surface is seted up and is held the slot, and two sets of main magnet are installed respectively and are held slot bottom surface both ends position.
Preferably, the first auxiliary magnet, the second auxiliary magnet, the main magnet and the end magnet are all permanent magnets.
Preferably, the magnetic energy product of the main magnet is greater than the magnetic energy products of the first and second auxiliary magnets.
Preferably, the depth of the accommodating groove is smaller than the height of the main magnet.
Compared with the prior art, the utility model has the advantages of:
the utility model discloses a set up adjacent main magnet, but widen the sputtering region of target top, make target top magnetic field intensity distribute more evenly to improve the utilization ratio of target, strengthened the plasma density of target top, can improve sputtering rate, thereby improve film deposition rate, reduce the coating film cost.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
FIG. 1 is a conventional magnetron sputtering planar cathode in the prior art;
FIG. 2 is a structural diagram of a high efficiency magnetron sputtering planar cathode of the present invention;
fig. 3 is a magnetic field diagram of a high-efficiency magnetron sputtering planar cathode of the present invention.
In the figure: 1 target, 2 magnetic yokes, 3 end magnets, 4 first auxiliary magnets, 5 second auxiliary magnets, 6 accommodating grooves and 7 main magnets.
Detailed Description
The preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings, so that the advantages and features of the present invention can be more easily understood by those skilled in the art, and the scope of the present invention can be more clearly and clearly defined.
Referring to fig. 2, the utility model provides a high efficiency magnetron sputtering planar cathode, including target and magnetic field generating device, magnetic field generating device includes yoke and the double magnetic circuit magnet device of setting between target 1 and yoke 2, target 1 and yoke 2 set up each other horizontally, double magnetic circuit magnet device includes two sets of main magnet devices and two sets of auxiliary magnet devices, two sets of main magnet devices symmetric distribution are on yoke 2, the main magnet device includes tip magnet 3 and main magnet 7, form the main magnetic field return circuit, two sets of tip magnets 3 set up respectively in yoke 2 upper surface both ends position, two sets of tip magnets 3 are connected with yoke 2 and are formed closed magnetic circuit, and form magnetic field restraint plasma on target 1 surface, two sets of main magnet 7 adjacent set up in yoke 2 upper surface middle position, the magnetization polar axis direction of main magnet 7 all levels with target 1, the inner magnetic poles of the two groups of main magnets 7 are the same, the two groups of main magnets 7 are designed adjacently, under the condition that the magnetic field component parallel to the surface of the target 1 is not reduced, the magnetic field component vertical to the surface of the target 1 is reduced, so that the sputtering area of the surface of the target 1 is widened, the magnetizing polar axis directions of the two groups of end magnets 3 are vertical to the surface of the target 1, the two groups of end magnets 3 are close to the side of the target and have the same magnetic poles as the outer magnetic poles of the main magnets 7, the auxiliary magnet device comprises two groups of auxiliary magnets, the two groups of auxiliary magnets are respectively arranged between the main magnets 7 and the end magnets 3 on the upper surface of the magnet yoke 2, the auxiliary magnets comprise first auxiliary magnets 4 and second auxiliary magnets 5 to form an auxiliary magnetic field loop, the magnetizing polar axis directions of the end magnets 3, the first auxiliary magnets 4 and the second auxiliary magnets, The magnetic pole directions of the first auxiliary magnet 4 and the second auxiliary magnet 5 are opposite, the first auxiliary magnet 4 and the second auxiliary magnet 5 provide a magnetic field loop opposite to the magnetic field formed by the main magnet device, the peak-shaped magnetic field (shown as the curve of fig. 1) on the surface of the conventional magnetron sputtering planar cathode target is changed into a saddle shape (shown as the curve of fig. 3), the uniformity of the magnetic field presented by the target is improved, and the etching pit of the target 1 is changed into a long U shape (shown as the shaded part in fig. 3) from a V shape (shown as the shaded part in fig. 1); thereby prolonging the service life of the target 1 and improving the utilization efficiency of the target.
In this embodiment, the upper surface of the magnetic yoke 2 is provided with an accommodating groove 6, and the two groups of main magnets 7 are respectively installed at two end positions of the bottom surface of the accommodating groove 6.
In this embodiment, first auxiliary magnet 4, second auxiliary magnet 5, main magnet 7 and end magnet 3 are the permanent magnet, and the permanent magnet can be neodymium iron boron permanent magnet or samarium cobalt permanent magnet.
In the present embodiment, the magnetic energy product of the main magnet 7 is larger than the magnetic energy products of the first auxiliary magnet 4 and the second auxiliary magnet 5.
In this embodiment, the depth of the receiving groove 6 is smaller than the height of the main magnet 7, and the purpose of the receiving groove 6 is to facilitate installation of the main magnet 7.
Although the embodiments of the present invention have been described with reference to the accompanying drawings, various changes and modifications can be made by the owner within the scope of the appended claims, and the protection scope of the present invention should not be exceeded by the claims.
Claims (5)
1. The utility model provides a high efficiency magnetron sputtering plane negative pole, includes target and magnetic field generating device, and magnetic field generating device includes the yoke and sets up the dual magnetic circuit magnet device between target and the yoke, the mutual level of target and yoke sets up its characterized in that: the double-magnetic-circuit magnet device comprises two groups of main magnet devices and two groups of auxiliary magnet devices, the two groups of main magnet devices are symmetrically distributed on a magnet yoke, each main magnet device comprises an end magnet and a main magnet, the two groups of end magnets are respectively arranged at two ends of the upper surface of the magnet yoke, the two groups of main magnets are adjacently arranged at the middle position of the upper surface of the magnet yoke, the magnetization polar axis directions of the main magnets are horizontal to a target, the inner side magnetic poles of the two groups of main magnets are the same, the magnetization polar axis directions of the two groups of end magnets are vertical to the surface of the target, the two groups of end magnets are close to the side of the target and have the same magnetic poles as the outer side magnetic poles of the main magnets, each auxiliary magnet device comprises two groups of auxiliary magnets, the two groups of auxiliary magnets are respectively arranged between, the magnetization polar axis directions of the end magnet, the first auxiliary magnet and the second auxiliary magnet are perpendicular to the target, and the magnetic pole directions of the end magnet, the first auxiliary magnet and the second auxiliary magnet at adjacent positions are opposite.
2. The high efficiency magnetron sputtering planar cathode according to claim 1, characterized in that: the magnet yoke upper surface has been seted up and has been held the slot, and two sets of main magnet is installed respectively and is held slot bottom surface both ends position.
3. The high efficiency magnetron sputtering planar cathode according to claim 1, characterized in that: the first auxiliary magnet, the second auxiliary magnet, the main magnet and the end magnet are all permanent magnets.
4. The high efficiency magnetron sputtering planar cathode according to claim 1, characterized in that: the magnetic energy product of the main magnet is larger than that of the first auxiliary magnet and the second auxiliary magnet.
5. The high efficiency magnetron sputtering planar cathode according to claim 2, characterized in that: the depth of the accommodating groove is smaller than the height of the main magnet.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201920524017.5U CN209836293U (en) | 2019-04-17 | 2019-04-17 | High-efficiency magnetron sputtering planar cathode |
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| CN201920524017.5U CN209836293U (en) | 2019-04-17 | 2019-04-17 | High-efficiency magnetron sputtering planar cathode |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109881167A (en) * | 2019-04-17 | 2019-06-14 | 合肥科赛德真空技术有限公司 | A kind of high efficiency magnetron sputtering planar cathode |
| CN110965036A (en) * | 2019-12-26 | 2020-04-07 | 沈阳广泰真空科技有限公司 | Rare earth permanent magnet surface vacuum coating equipment |
| WO2021128699A1 (en) * | 2019-12-27 | 2021-07-01 | 季华实验室 | Novel magnetron sputtering cathode |
| CN115505890A (en) * | 2022-11-28 | 2022-12-23 | 中科纳微真空科技(合肥)有限公司 | Magnetron sputtering planar cathode and magnetic circuit thereof |
-
2019
- 2019-04-17 CN CN201920524017.5U patent/CN209836293U/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109881167A (en) * | 2019-04-17 | 2019-06-14 | 合肥科赛德真空技术有限公司 | A kind of high efficiency magnetron sputtering planar cathode |
| CN110965036A (en) * | 2019-12-26 | 2020-04-07 | 沈阳广泰真空科技有限公司 | Rare earth permanent magnet surface vacuum coating equipment |
| CN110965036B (en) * | 2019-12-26 | 2021-09-14 | 沈阳广泰真空科技有限公司 | Rare earth permanent magnet surface vacuum coating equipment |
| WO2021128699A1 (en) * | 2019-12-27 | 2021-07-01 | 季华实验室 | Novel magnetron sputtering cathode |
| CN115505890A (en) * | 2022-11-28 | 2022-12-23 | 中科纳微真空科技(合肥)有限公司 | Magnetron sputtering planar cathode and magnetic circuit thereof |
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Effective date of registration: 20210819 Address after: 230000 Shuangfeng Road, Shuangfeng Economic Development Zone, Changfeng County, Hefei City, Anhui Province Patentee after: Anhui Saizheng Technology Co.,Ltd. Address before: 230088 Room 301, floor 3, building B, guokejuntong Industrial Park, Yanzihe Road, high tech Zone, Hefei, Anhui Patentee before: HEFEI KESAIDE VACUUM TECHNOLOGY Co.,Ltd. |
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Effective date of registration: 20230612 Address after: 230088 Room 301, floor 3, building B, guokejuntong Industrial Park, Yanzihe Road, high tech Zone, Hefei, Anhui Patentee after: HEFEI KESAIDE VACUUM TECHNOLOGY Co.,Ltd. Address before: 230000 Shuangfeng Road, Shuangfeng Economic Development Zone, Changfeng County, Hefei City, Anhui Province Patentee before: Anhui Saizheng Technology Co.,Ltd. |
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