CN103993276B - Rotating cathode bar magnet and there is the rotary target material of rotating cathode bar magnet - Google Patents
Rotating cathode bar magnet and there is the rotary target material of rotating cathode bar magnet Download PDFInfo
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- CN103993276B CN103993276B CN201410197122.4A CN201410197122A CN103993276B CN 103993276 B CN103993276 B CN 103993276B CN 201410197122 A CN201410197122 A CN 201410197122A CN 103993276 B CN103993276 B CN 103993276B
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Abstract
Rotating cathode bar magnet and have the rotary target material of rotating cathode bar magnet, belongs to the critical process equipment of sputter coating.The rotating cathode bar magnet of the present invention includes bar magnet support and is distributed in the Magnet on its surface, and what described Magnet included being arranged on described bar magnet bracket end district all has first group of Magnet according at least one arrangement curvature distribution；And it is arranged on second group of Magnet in described bar magnet mid-stent district；Described first, second group of Magnet is made up of polylith square magnet.The rotary target material of the present invention includes being arranged on the target penstock within described target and within target penstock or two described rotating cathode bar magnets, is less than the inner surface arc surface radius of target penstock according to the arc surface radius of first, second group of Magnet of arc profile arrangement.The rotating cathode bar magnet of the present invention and have the rotary target material of rotating cathode bar magnet and can accurately control magnetic field distribution to reduce target-end etching groove depth, improves target utilization rate.
Description
Technical field
The invention belongs to sputter coating critical process equipment, especially relate to a kind of rotating cathode bar magnet and there is the rotary target material of rotating cathode bar magnet.
Background technology
Magnetron sputtering plating is current widely used coated film deposition technique.The principle of sputter coating be noble gas under electric field action, target material surface is bombarded, the molecule of target material surface, atom, ion and electronics etc. sputter out, be splashed on substrate deposit film forming.In coating process, the highest to the prescription of magnetic-controlled sputtering coating equipment, the most significantly magnetic field distribution of magnetic control sputtering cathode.Generally improper because of the magnetic field intensity ratio in the middle part of target both ends magnetic field intensity and target in coating process, the etching speed causing target-end district is faster than the etching speed of target middle region, make target material surface entirety etching outline uneven, there is etch back groove and the etching of target middle part is shallower in especially target both ends, the target more renewed is decided whether when need to etch groove deep bit depth close to its thickness according to target time the most actually used, target both ends occur that etching groove is crossed can cause the target waste of target middle part deeply, target utilization rate is reduced, add coating cost.
Application for a patent for invention CN103050358A discloses a kind of planar magnetic control sputtering cathode, and it includes target, magnet apparatus and magnetic boots.This invention improves the magnet apparatus in prior art with three Magnet, it is set to magnet arrangement have and is respectively arranged at target both sides and 3 first middle magnets and is symmetricly set in 2 second magnet groups of the first middle magnet both sides of target, and the polarity arrangement that arranges the polarity of 2 first adjacent magnets and 2 second adjacent magnet groups is contrary, the magnetic field distribution making target material surface is more uniform, improves the utilization rate of target.But, this invention is only the Distribution of Magnetic Field improving planar targets surface, and planar targets is low compared to the utilization rate of rotary target material；The improvement of the magnetic field intensity of the most described magnet apparatus is only the improvement of the magnetic field intensity of vertical target surface direction, the magnetic field intensity in parallel target material surface direction is not improved, the most described invention suitability is the strongest, can not accurately control magnetic field distribution according to target type, especially cannot be used for improving the utilization rate of rotary target material.
Summary of the invention
The present invention is directed to deficiencies of the prior art, it is provided that a kind of accurate control magnetic field distribution is to optimize the rotating cathode bar magnet of target-end etching groove and to have the rotary target material of rotating cathode bar magnet.
A kind of rotating cathode bar magnet of offer is provided, including bar magnet support and the Magnet that is distributed in its surface, it is characterized in that, what described Magnet included being arranged on described bar magnet bracket end district all has first group of Magnet according at least one arrangement curvature distribution；And it is arranged on second group of Magnet in described bar magnet mid-stent district；Described first, second group of Magnet is made up of polylith square magnet.Described rotating cathode bar magnet is used for magnetron sputtering deposition process, by arranging different size Magnet respectively so that bar magnet surface forms uniform magnetic field distribution in its bar magnet bracket end district and middle region, optimize bar magnet bracket end district and the magnetic field intensity ratio of middle region, so during plated film, surface, target both ends etch depth is less than or equal to the etch depth in the middle part of target, and then improves target utilization rate.
Magnet in described first, second group of Magnet stationary arrangement respectively is on the surface of described bar magnet support, and magnet surface designs according to arc profile.
Polylith Magnet in described first group of Magnet be arranged in V-type by difference arrangement curvature in bar magnet bracket end district and
Between ┕ ┙ type, arbitrary radian of change is U-shaped.
Described second group of Magnet includes that odd number N row magnetic direction is perpendicular to the Magnet of described bar magnet rack surface and even number N-1 row magnetic direction is parallel to the Magnet of described bar magnet rack surface；Magnetic direction is perpendicular to the odd number N row Magnet of described bar magnet rack surface and is parallel to the even number N-1 row Magnet of described bar magnet rack surface with magnetic direction alternately and the parallel middle region being distributed in described bar magnet support;It is contrary that magnetic direction is perpendicular to the adjacent column magnet polarities in the odd number N row Magnet of described bar magnet rack surface, and identical with adjacent magnets polarity on string；It is contrary that magnetic direction is parallel to the adjacent column magnet polarities in the even number N-1 row Magnet of described bar magnet rack surface, and identical with adjacent magnets polarity on string.
Described bar magnet support is the rod that nonmagnetic substance is made.
Magnet size in described first group of Magnet is less than the magnet size in described second group of Magnet.
Another technical scheme of the present invention is to provide a kind of rotary target material with described rotating cathode bar magnet, target penstock and one or two bar magnets being arranged within rotary target material are had inside described target, it is characterized in that, be less than the inner surface arc surface radius of target penstock according to the arc surface radius of first, second group of Magnet of arc profile arrangement.The magnetic field distribution that described target is formed because installing different magnet array on its interior negative electrode bar magnet, make it by uniform etching during magnetron sputtering deposition, it is to say, the etching speed of described target-end district and middle region is uniform, it is to avoid target over etching is to penstock material., also in terms of physical dimension, Magnet arc surface radius is improved, to avoid the inner surface of Magnet collision target penstock meanwhile.
The magnetic field intensity being parallel to target material surface durection component of the bent magnetic field that described first group of magnet is constituted is the 20% ~ 40% of the magnetic field intensity being parallel to target material surface durection component of the parallel magnetic field that described second group of Magnet is constituted.
The maximum magnetic field strength being parallel to target material surface durection component of the parallel magnetic field that described second group of Magnet is constituted is 300-1200 Gauss.
The magnetic field intensity of described bent magnetic field and parallel magnetic field can regulate by selecting different ferromagnetic material model, width and thickness.
Beneficial effects of the present invention:
(1) target utilization rate is improved: by accurately controlling rotating cathode bar magnet end region and the magnetic field distribution of middle region, optimize the etching groove depth in target-end district, make the etch depth of whole target be uniformly distributed, improve target utilization rate；
(2) reducing cost: target utilization rate improves, target uses the time to increase, and the most whole coating process cost reduces.
Accompanying drawing explanation
Below with reference to accompanying drawings specific embodiments of the present invention are described in detail, wherein:
Fig. 1 is the target material surface etching outline in existing coating process；
Fig. 2 is the overall bar magnet scheme of installation of rotating cathode bar magnet of the present invention；
Fig. 3 is first group of Magnet and second group of Magnet scheme of installation of middle region, local of rotating cathode bar magnet end region of the present invention；
Fig. 4 a is the top view of the distribution of magnets of rotating cathode bar magnet end region of the present invention and middle region；
Fig. 4 b is the sectional view of the distribution of magnets of rotating cathode bar magnet middle region of the present invention；
Fig. 5 a is the magnetic field of magnets intensity distribution of rotating cathode bar magnet end region of the present invention and middle region vertical target surface direction；
Fig. 5 b is the magnetic field of magnets intensity distribution in rotating cathode bar magnet end region of the present invention and middle region parallel target material surface direction.
In figure, 1-etches groove；The target material surface at revolution position, magnetic field, 2-termination；Target material surface in the middle part of 3-；4-bar magnet support；5-rotating cathode bar magnet end region；6-rotating cathode bar magnet middle region；7-target penstock.
Detailed description of the invention
Below according to drawings and Examples, the present invention is described in further detail:
Fig. 1 show the target material surface etching outline in existing coating process, and the target material surface 2 at revolution position, magnetic field, termination corrodes relatively middle part target material surface 3 and corrodes seriously, and the etching groove 1 of certain depth occurs at target-end.This is to be caused by the design of usual rotating cathode bar magnet, because its end is uncomfortable with middle part magnetic field distribution ratio, causes target-end etching speed too fast, and deep etching groove 1 occurs in target-end, excessively uses and may be etched to penstock, reduces target utilization rate.
The present invention is directed to the problem that the target material surface etching outline in existing coating process is uneven, the most accurately control the magnetic field distribution of rotating cathode bar magnet and target material surface to optimize target-end etching groove depth.
Embodiment one
Fig. 2 show the overall bar magnet scheme of installation of rotating cathode bar magnet.Described rotating cathode bar magnet includes bar magnet support 4 and is distributed in the Magnet on its surface.The end region 5 of described bar magnet support 4 and middle region 6 distributed first group of Magnet of different arrangement mode and second group of Magnet respectively, and often group Magnet is all made up of polylith different size square magnet, such as rectangle or square Magnet.Having the screw hole installed above described bar magnet support 4, the Magnet in described first, second group of Magnet is fixed by screw on the surface of described bar magnet support 4, and the rod that described bar magnet support 4 is made for nonmagnetic substance.Above-mentioned mounting means, is not limited to fastened by screw mode, and can be realized by other fastening means in state of the art.Simultaneously, described magnet surface designs according to arc profile, when using in it is installed on target, also need to be slightly less than the inner surface arc surface radius of target penstock so that the arc surface radius of described arc profile, to avoid the inner surface of Magnet collision target penstock, cause Magnet damaged, and then affect target material surface magnetic field distribution.
The most important of the present invention is how to control bar magnet end region 5 and middle region 6 magnetic field distribution.
Described bar magnet end region 5 is formed by according to first group of Magnet of at least one arrangement curvature distribution.First group of Magnet scheme of installation of the most visible rotating cathode bar magnet end region 5 of Fig. 3 and Fig. 4 a and distribution of magnets top view, polylith Magnet in described first group of Magnet arranges according to the approximation being changing into arbitrary radian between V-type (i.e. BOD in Fig. 4 a) and ┕ ┙ type (i.e. BACD in Fig. 4 a) is U-shaped in bar magnet bracket end district 5, described radian is based on different arrangement curvature and constitutes, V-type and ┕ ┙ type are the ultimate value of described radian change, namely arrange the endpoint value of curvature range.The Magnet that polylith in described first Magnet varies in size is according to arrangement curvature endpoint value and without being adjusted distribution in the range of endpoint value, the arrangement mode of at least one mode can be formed, to coordinate the Distribution of Magnetic Field of bar magnet middle region 6, it is achieved overall bar magnet field homogeneity distribution.Wherein distribution of magnets position and Magnet quantity and shape are not limited to shown in figure, make adaptation change according to actual needs.
Described bar magnet middle region 6 includes that odd number N row magnetic direction is perpendicular to the Magnet on described bar magnet support 4 surface and even number N-1 row magnetic direction is parallel to the Magnet on described bar magnet support 4 surface.Wherein, magnetic direction is perpendicular to the N row Magnet on described bar magnet support 4 surface and is parallel to the N-1 row Magnet on described bar magnet support 4 surface with magnetic direction alternately and the parallel middle region 6 being distributed in described bar magnet support 4, and each column Magnet is made up of polylith or monoblock Magnet.And the adjacent column magnet polarities in odd column Magnet is contrary, and on the every string being made up of polylith Magnet, adjacent magnets polarity is identical；Adjacent column magnet polarities in even column Magnet is contrary, and on the every string being made up of polylith Magnet, adjacent magnets polarity is identical.Seen from Fig. 3, Fig. 4 a and Fig. 4 b, bar magnet middle region 6 is arranged by above-mentioned magnet array mode, wherein N=3, then have 3 row magnetic directions to be perpendicular to the Magnet on described bar magnet support 4 surface and 2 row magnetic directions are parallel to the Magnet on described bar magnet support 4 surface.It is perpendicular to the Magnet on described bar magnet support 4 surface than only 3 row magnetic directions, does not has any magnetic direction to be parallel to the situation of Magnet on described bar magnet support 4 surface, the magnetic confining field that second group of Magnet that 5 row Magnet are constituted is formed is easier to optimize than the magnetic confining field that second group of Magnet that 3 row Magnet are constituted is formed, magnetic field intensity and the uniformity all improve, and bar magnet middle region 6 target etch depth is more easy to optimize relative to bar magnet end region 5, it is effectively improved target utilization.Columns N in second group of Magnet is not limited to above-mentioned situation, increases according to actual needs, it is contemplated that bar magnet finite surface area, can be by changing Magnet shape, size mode to coordinate a number of distribution of magnets.
In addition to the optimization of above-mentioned bar magnet end region 5 and distribution of magnets position, middle region 6 controls bar magnet Surface field intensity distributions, also can be selected for different ferromagnetic material model, size, width and thickness and regulate.Such as, the magnet size in described first group of Magnet is less than the magnet size in described second group of Magnet；Material model optional low-coercivity N, medium coercivity M, high-coercive force H, extra-high coercivity SH, ultra-high coercive force UH, high coercivity EH, very high-coercive force TH etc.；Magnet width and thickness are respectively 1/2 " ~ 3 " and 1/4 " ~ 2 " between regulate.
Embodiment two
Above-mentioned rotating cathode bar magnet is installed in rotary target material, has target penstock and one or two bar magnets being arranged within rotary target material inside described target.According to plated film needs, the target of unlike material can be selected, such as silicon, aluminum, molybdenum, ITO target etc..Described target penstock typically requires have preferable heat conductivity and enough intensity, it is possible to use penstock material include but not limited to rustless steel, titanium, titanium alloy etc..
Because end region 5 and middle region 6 magnetic field distribution of rotating cathode bar magnet are improved, the magnetic field strength component distribution such as Fig. 5 a being perpendicular to target material surface being provided with the rotary target material surface of described rotating cathode bar magnet and the magnetic field strength component being parallel to target material surface are distributed as shown in Figure 5 b.The magnetic field distribution being parallel to target material surface has pivotal role to etching outline, our experiments show that, described rotating cathode bar magnet and the magnetic field distribution equipped with the target optimum of described rotating cathode bar magnet are the 20% ~ 40% of the magnetic field intensity being parallel to target material surface durection component of the parallel magnetic field (such as Fig. 4 a) of second group of Magnet composition as described in the magnetic field intensity being parallel to target material surface durection component of the bent magnetic field (such as Fig. 4 a) that described first group of magnet is constituted is；The maximum magnetic field strength being parallel to target material surface durection component of the parallel magnetic field that wherein said second group of Magnet is constituted is about 300-1200 Gauss.
Embodiment described above is only to be described the preferred embodiment of the present invention, is not defined the spirit and scope of the present invention.On the premise of without departing from design concept of the present invention; various modification that technical scheme is made by this area ordinary person and improvement; protection scope of the present invention all should be dropped into, the technology contents that the present invention is claimed, all record in detail in the claims.
Claims (10)
1. rotating cathode bar magnet, including bar magnet support and the Magnet that is distributed in its surface, it is characterised in that
What described Magnet included being arranged on described bar magnet bracket end district has first group of Magnet according at least one arrangement curvature distribution；
And it is arranged on second group of Magnet in described bar magnet mid-stent district；
Described first, second group of Magnet is made up of polylith square magnet.
Rotating cathode bar magnet the most according to claim 1, it is characterised in that the stationary arrangement respectively of the Magnet in described first, second group of Magnet is on the surface of described bar magnet support, and magnet surface designs according to arc profile.
Rotating cathode bar magnet the most according to claim 2, it is characterised in that the polylith Magnet in described first group of Magnet is arranged between V-type and ┕ ┙ type the U-shaped of arbitrary radian of change in bar magnet bracket end district by difference arrangement curvature.
Rotating cathode bar magnet the most according to claim 3, it is characterised in that described second group of Magnet includes that odd number N row magnetic direction is perpendicular to the Magnet of described bar magnet rack surface and even number N-1 row magnetic direction is parallel to the Magnet of described bar magnet rack surface；Magnetic direction is perpendicular to the N row Magnet of described bar magnet rack surface and is parallel to the N-1 row Magnet of described bar magnet rack surface with magnetic direction alternately and the parallel middle region being distributed in described bar magnet support;It is contrary that magnetic direction is perpendicular to the adjacent column magnet polarities in the N row Magnet of described bar magnet rack surface, and identical with adjacent magnets polarity on string；It is contrary that magnetic direction is parallel to the adjacent column magnet polarities in the N-1 row Magnet of described bar magnet rack surface, and identical with adjacent magnets polarity on string.
Rotating cathode bar magnet the most according to claim 4, it is characterised in that described bar magnet support is the rod that nonmagnetic substance is made.
Rotating cathode bar magnet the most according to claim 5, it is characterised in that the magnet size in described first group of Magnet is less than the magnet size in described second group of Magnet.
7. the rotary target material of one of aforementioned claim 2-6 rotating cathode bar magnet is installed, target penstock and one or two bar magnets being arranged within rotary target material are had inside described target, it is characterized in that, be less than the inner surface arc surface radius of target penstock according to the arc surface radius of first, second group of Magnet of arc profile arrangement.
Rotary target material the most according to claim 7, it is characterized in that, the magnetic field intensity being parallel to target material surface durection component of the bent magnetic field that described first group of magnet is constituted is the 20% ~ 40% of the magnetic field intensity being parallel to target material surface durection component of the parallel magnetic field that described second group of Magnet is constituted.
Rotary target material the most according to claim 8, it is characterised in that the maximum magnetic field strength being parallel to target material surface durection component of the parallel magnetic field that described second group of Magnet is constituted is 300-1200 Gauss.
Rotary target material the most according to claim 9, the magnetic field intensity of described bent magnetic field and parallel magnetic field can regulate by selecting different ferromagnetic material model, width and thickness.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410197122.4A CN103993276B (en) | 2014-05-12 | 2014-05-12 | Rotating cathode bar magnet and there is the rotary target material of rotating cathode bar magnet |
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| CN103993276B true CN103993276B (en) | 2016-09-28 |
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| CN111621760A (en) * | 2020-06-30 | 2020-09-04 | 浙江上方电子装备有限公司 | Rotary cathode magnetic bar for magnetron sputtering |
| CN113667949B (en) * | 2021-08-19 | 2023-07-25 | 深圳市华星光电半导体显示技术有限公司 | Magnetron sputtering equipment |
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| CN203999794U (en) * | 2014-05-12 | 2014-12-10 | 浙江上方电子装备有限公司 | Rotating cathode bar magnet and there is the rotary target material of rotating cathode bar magnet |
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| DE10336422A1 (en) * | 2003-08-08 | 2005-03-17 | Applied Films Gmbh & Co. Kg | Device for sputtering |
| PL1722005T3 (en) * | 2005-05-13 | 2007-11-30 | Applied Mat Gmbh & Co Kg | Method of using a sputtering cathode together with a target |
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