CN106967955B

CN106967955B - Magnetron sputtering device

Info

Publication number: CN106967955B
Application number: CN201710325679.5A
Authority: CN
Inventors: 严清涛; 陈齐松; 刘海亮; 陈宗维; 王鹏涛; 许非凡
Original assignee: Dongxu Kunshan Display Material Co ltd; Tunghsu Group Co Ltd; Tunghsu Technology Group Co Ltd
Current assignee: Dongxu Kunshan Display Material Co ltd; Tunghsu Group Co Ltd; Tunghsu Technology Group Co Ltd
Priority date: 2017-05-10
Filing date: 2017-05-10
Publication date: 2023-05-23
Anticipated expiration: 2037-05-10
Also published as: CN106967955A

Abstract

The invention relates to the technical field of physical vapor deposition, and discloses a magnetron sputtering device which solves the problems that the edge of a target material is consumed too fast, the targets in other areas cannot be fully utilized, and the target material utilization rate is low. The device comprises: the magnetic field generating device comprises a magnetic track and at least two rotating wheels, wherein the magnetic track comprises a track and a plurality of magnets which are fixed on the track in parallel at equal intervals, and the magnetic track is wound on the at least two rotating wheels to form a track transmission structure which is parallel up and down; the target material is arranged in the uniform magnetic field formed by the magnetic field generating device and is parallel to the magnetic track; the two magnetic shielding plates are respectively arranged at two ends of the target and used for shielding the magnetic field exceeding the target, wherein the length of the uniform magnetic field is greater than or equal to the length of the target, and the length of the magnet is greater than the width of the target. The embodiment of the invention is suitable for the magnetron sputtering process.

Description

Magnetron sputtering device

Technical Field

The invention relates to the technical field of physical vapor deposition, in particular to a magnetron sputtering device.

Background

Magnetron sputtering is one type of physical vapor deposition (Physical Vapor Deposition, PVD). The general sputtering method can be used for preparing various materials such as metal, semiconductor, insulator and the like, and the magnetron sputtering is widely applied to the fields of integrated circuits, liquid crystal displays, thin film solar energy and the like. The magnetic field is introduced behind the target backboard, and the magnetic field is utilized to bind charged particles, so that the density of plasma on the surface of the target is increased, and the sputtering rate of the target is improved. The charged particles (Ar+) are accelerated to bombard the target material under the action of an electric field, and a large number of neutral target material atoms (or molecules) are sputtered to deposit on the substrate to form a film; the secondary electrons generated are constrained by magnetic field force in a plasma region near the target surface and move around the target surface. Electrons are continuously collided with argon atoms in the moving process, and a large amount of argon ions are ionized to bombard the target material, so that high-speed deposition is realized. However, the problem of strong and weak magnetic field distribution is also solved, so that the local consumption of the target is relatively too fast, and the utilization rate of the target is reduced.

A uniform magnetic field may be generated by the high-speed reciprocation of the magnet. When the magnet moves to the edge position of the rail, it is necessary to stop the hysteresis and return again. When the magnet stagnates, due to the weak central magnetic field and the weak fringe magnetic field, W-shaped dents are left at the two ends of the target, as shown in FIG. 1. Along with the consumption of the target, the target is easy to break down at the lowest part of the W-shaped dent, so that the service life of the whole target is finished, the back plate can be hit when serious, the product is scrapped, the target is not fully utilized at other positions, and the utilization rate of the target is low.

Disclosure of Invention

The invention aims to solve the problems that the edge of a target material is consumed too fast, the targets in other areas cannot be fully utilized, and the target material utilization rate is low in the prior art, and provides a magnetron sputtering device which prolongs the service life of the target material.

In order to achieve the above object, an aspect of the present invention provides a magnetron sputtering apparatus comprising:

the magnetic field generating device comprises a magnetic track and at least two rotating wheels, wherein the magnetic track comprises a track and a plurality of magnets which are fixed on the track in parallel at equal intervals, and the magnetic track is wound on the at least two rotating wheels to form a track transmission structure which is parallel up and down;

the target material is arranged in the uniform magnetic field formed by the magnetic field generating device and is parallel to the magnetic track;

two magnetic shielding plates which are respectively arranged at two ends of the target material and shield the magnetic field exceeding the target material,

the length of the uniform magnetic field is larger than or equal to the length of the target, and the length of the magnet is larger than the width of the target.

Further, the target is disposed above or below the crawler belt in the uniform magnetic field formed by the magnetic field generating device.

Further, the device also comprises a crawler guide rail, which is arranged below the magnetic crawler adjacent to the target and is used for supporting the magnetic crawler.

Further, the material of the track guide rail is copper or copper alloy.

Further, at least one of the at least two rotating wheels is provided as a driving wheel.

Further, the magnets are fixed to the track by a non-magnetic frame.

Further, at least one magnet is arranged as a continuous splice of small magnets.

Further, all the magnets are arranged into a plurality of sections of small magnets with equal length, which are spliced at equal intervals, and the intervals are the same as the lengths of the small magnets.

Further, the magnetic shield panel has high magnetic permeability.

Further, the shape of the magnet is a round prism, a cylinder or a square column.

The magnetron sputtering device is provided with a magnetic field generating device which comprises a magnetic track and at least two rotating wheels, wherein the magnetic track comprises a track and a plurality of magnets which are fixed on the track in parallel at equal intervals, and the magnetic track is wound on the at least two rotating wheels to form a track uniform transmission structure which is parallel up and down; the target material is arranged in the uniform magnetic field formed by the magnetic field generating device and is parallel to the magnetic track; and two magnetic shielding plates are respectively arranged at two ends of the target, and shield the magnetic field exceeding the target, wherein the length of the uniform magnetic field is greater than or equal to that of the target, and the length of the magnet is greater than the width of the target, so that the uniformity of target bombardment is improved, the problems that the edge of the target is consumed too fast, targets in other areas cannot be fully utilized, the target utilization rate is low and the service life of the target is prolonged are solved.

Drawings

The accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification, illustrate the invention and together with the description serve to explain, without limitation, the invention. In the drawings:

FIG. 1 is a schematic illustration of a prior art W-shaped dimple formed with non-uniform target edge consumption;

FIG. 2 is a schematic diagram of a magnetron sputtering apparatus according to an embodiment of the present invention;

FIG. 3 is a schematic view of a magnetron sputtering apparatus according to an embodiment of the present invention;

FIG. 4 is a schematic diagram of another magnetron sputtering apparatus according to an embodiment of the invention;

FIG. 5 is a schematic view of a magnetron sputtering apparatus according to another embodiment of the invention;

FIG. 6 is a schematic diagram of a magnetron sputtering apparatus according to another embodiment of the invention;

fig. 7 is a schematic view of a magnet in a magnetron sputtering apparatus according to an embodiment of the invention.

Description of the reference numerals

100. Magnetic field generating device 101 magnetic track

102. Rotating wheel 103 crawler belt

104. Magnet 200 target

300. Magnetic shield 400 track rail

Detailed Description

The following describes specific embodiments of the present invention in detail with reference to the drawings. It should be understood that the detailed description and specific examples, while indicating and illustrating the invention, are not intended to limit the invention.

The present embodiment provides a magnetron sputtering device, as shown in fig. 2, which is a schematic structural diagram of the magnetron sputtering device according to an embodiment of the present invention, and the magnetron sputtering device includes:

the magnetic field generating device 100 comprises a magnetic track 101 and at least two rotating wheels 102, wherein as shown in fig. 3, the magnetic track 101 comprises a track 103 and a plurality of magnets 104 which are fixed on the track at equal intervals in parallel, and the magnetic track 101 is wound on the at least two rotating wheels 102 to form a track transmission structure which is parallel up and down;

a target 200 disposed in the uniform magnetic field generated by the magnetic field generating device 100 and parallel to the crawler belt 101, wherein the uniform magnetic field is marked by a scribe line region;

two magnetic shielding plates 300, respectively provided at both ends of the target 200, shielding a magnetic field exceeding the target,

wherein the length of the uniform magnetic field is greater than or equal to the length of the target 200, and the length of the magnet 104 is greater than the width of the target 200.

The number of the magnets 104 in the magnetic track 101 may be adjusted according to the length of the target 200 and the distance between adjacent magnets 104, so that the length of the formed uniform magnetic field is greater than the length of the target 200.

By adopting the magnetic body assembly into the magnetic track and the uniform transmission operation mode in the magnetron sputtering device, a uniform and stable magnetic field is formed in the target area, so that a film with uniform thickness is formed, the formation of dents on the surface of the target is avoided, the utilization rate of the target is increased, and the service life of the target is prolonged.

Wherein, due to the existence of the rotating wheel 102 in the magnetic field generating device 100, when the magnet 104 on the magnetic track 101 is driven to the rotating wheel 102, the distance between the magnet 104 and the target 200 changes, for example, when the magnet 104 on the magnetic track 101 is driven to the outer side of the rotating wheel 102 from above, the distance between the magnet 104 and the target 200 changes, and a uniform magnetic field cannot be formed in the target area, so that the magnetic field exceeding the target 200 needs to be shielded by two magnetic shielding plates 300, and therefore the length of the uniform magnetic field formed by the magnetic field generating device 100 needs to be greater than or equal to the length of the target 200, and the length of the magnet 104 needs to be greater than the width of the target 200. In addition, the magnetic shield panel 300 has high magnetic permeability, such as nickel-iron alloy, or ultra low carbon steel, or the like.

Wherein, a plurality of rotating wheels 102 may be disposed in the magnetic field generating device 100 to support the magnetic track 101, so as to avoid the influence of the magnetic field distribution caused by the downward concave middle part of the magnetic track 101 due to the gravity action of the magnetic track 101.

The target 200 may be disposed below the crawler 101 in the uniform magnetic field generated by the magnetic field generating device 100 as shown in fig. 2, or the target 200 may be disposed above the crawler 101 in the uniform magnetic field generated by the magnetic field generating device 100 as shown in fig. 4, and the magnetic shield 300 may be disposed above the crawler 101 on the same side as the target. The target 200 may be provided within a uniform magnetic field formed by the magnetic field generating device 100, and the magnetic field exceeding the target 200 may be shielded using a magnetic shield panel 300.

In addition, as shown in fig. 5 and 6, the apparatus further includes a track rail 400 disposed below the magnetic track 101 adjacent to the target 200, for supporting the magnetic track 101, so as to prevent the middle portion of the magnetic track 101 from being concave downward due to gravity of the magnetic track 101, thereby affecting the magnetic field distribution. As shown in fig. 5, when the target 200 is positioned below the magnetic track 101, the track rail 400 is disposed below the magnetic track 101 adjacent to the target 200, and as shown in fig. 6, when the target 200 is positioned above the magnetic track 101, the track rail 400 is disposed below the magnetic track 101 on the same side as the target 200. The material of the track rail 400 may be copper or copper alloy, but is not limited thereto.

In addition, the rotating wheels 102 can rotate clockwise or counterclockwise to drive the crawler 103, wherein at least one of the at least two rotating wheels 102 is provided as a driving wheel.

The magnet 104 is fixed to the crawler 103 by a non-magnetic frame (not shown), and the non-magnetic frame may be made of plastic or copper, aluminum, magnesium, or zinc.

The shape of the magnet 104 may be, but not limited to, a circular prism as shown in fig. 7, but may also be other shapes such as a cylinder, a square column, etc.

In addition, at least one magnet may be provided as a continuous splice of multiple segments of small magnets. The N pole of the small magnet is spliced with the S pole of the other small magnet to form a magnet, or the magnetic poles of the opposite poles of the small magnets of multiple sections are spliced with each other to form a magnet, the magnet formed by continuous splicing can be regarded as a whole, the whole magnet is the same as a whole piece of magnet in practice, and the other magnets on the track can be a whole magnet or a magnet formed by continuous splicing of the small magnets of multiple sections.

In addition, all magnets on the track can be arranged into a plurality of sections of small magnets with equal length which are spliced at equal intervals. All magnets on the track are spliced at equal intervals by a plurality of sections of small magnets with equal length, and the intervals are the same as the lengths of the sections of small magnets.

The magnets which are continuously spliced or discontinuously spliced are fixed on the track by a non-magnetic frame.

By the magnetron sputtering device, since the target region is covered by the uniformly distributed magnetic field, the plasma (e ^- And Ar is a group ⁺ ) The thin film is uniformly distributed, so that a thin film with uniform thickness is formed, the uniformity of sputtering of the target is improved, and the utilization rate and the service life of the target are increased.

The preferred embodiments of the present invention have been described in detail above with reference to the accompanying drawings, but the present invention is not limited thereto. Within the scope of the technical idea of the invention, a number of simple variants of the technical solution of the invention are possible, including combinations of individual specific technical features in any suitable way. The various possible combinations of the invention are not described in detail in order to avoid unnecessary repetition. Such simple variations and combinations are likewise to be regarded as being within the scope of the present disclosure.

Claims

1. A magnetron sputtering apparatus, comprising:

wherein the length of the uniform magnetic field is greater than or equal to the length of the target, and the length of the magnet is greater than the width of the target;

wherein the target is arranged above or below the magnetic track in the uniform magnetic field formed by the magnetic field generating device;

at least one of the at least two rotating wheels is provided as a driving wheel;

the magnetic shield panel has high magnetic permeability;

the device also comprises a crawler guide rail, which is arranged below the magnetic crawler adjacent to the target and is used for supporting the magnetic crawler.

2. The magnetron sputtering device of claim 1, wherein the track rail is made of copper or copper alloy.

3. The magnetron sputtering apparatus of claim 1 wherein the magnets are fixed to the track by a non-magnetic frame.

4. The magnetron sputtering device according to claim 1, wherein at least one magnet is arranged as a continuous splice of small magnets.

5. The magnetron sputtering device according to claim 1, wherein all magnets are arranged as a plurality of segments of equal-length small magnets spliced at equal intervals, and the intervals are the same as the lengths of the small magnets.

6. The magnetron sputtering apparatus of claim 1 wherein the magnet is in the shape of a circular prism, a cylinder or a square column.